JP2003158295A5 - - Google Patents
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- Publication number
- JP2003158295A5 JP2003158295A5 JP2001356801A JP2001356801A JP2003158295A5 JP 2003158295 A5 JP2003158295 A5 JP 2003158295A5 JP 2001356801 A JP2001356801 A JP 2001356801A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2003158295 A5 JP2003158295 A5 JP 2003158295A5
- Authority
- JP
- Japan
- Prior art keywords
- gan
- based semiconductor
- thin film
- semiconductor thin
- film according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 70
- 239000010409 thin film Substances 0.000 claims 30
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000000203 mixture Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356801A JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356801A JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003158295A JP2003158295A (ja) | 2003-05-30 |
| JP2003158295A5 true JP2003158295A5 (enrdf_load_stackoverflow) | 2005-07-07 |
Family
ID=19168255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001356801A Pending JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003158295A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4588638B2 (ja) * | 2003-11-04 | 2010-12-01 | パイオニア株式会社 | 半導体発光素子及びその製造方法 |
| KR100601138B1 (ko) * | 2004-10-06 | 2006-07-19 | 에피밸리 주식회사 | Ⅲ-질화물 반도체 발광소자 및 그 제조 방법 |
| CN100454699C (zh) | 2004-11-22 | 2009-01-21 | 松下电器产业株式会社 | 氮化合物系半导体装置及其制造方法 |
| EP3958333B1 (en) * | 2019-04-19 | 2025-01-29 | Sony Group Corporation | Compound semiconductor layer laminate and method for forming same, and light-emitting device |
-
2001
- 2001-11-22 JP JP2001356801A patent/JP2003158295A/ja active Pending
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