CN101483212A - 三族氮化合物半导体发光二极管及其制造方法 - Google Patents
三族氮化合物半导体发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN101483212A CN101483212A CNA2008100029659A CN200810002965A CN101483212A CN 101483212 A CN101483212 A CN 101483212A CN A2008100029659 A CNA2008100029659 A CN A2008100029659A CN 200810002965 A CN200810002965 A CN 200810002965A CN 101483212 A CN101483212 A CN 101483212A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- semiconductor light
- nitrogen compound
- compound semiconductor
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- -1 nitride compound Chemical class 0.000 title claims description 45
- 239000000463 material Substances 0.000 claims abstract description 66
- 229910017464 nitrogen compound Inorganic materials 0.000 claims abstract description 34
- 150000002830 nitrogen compounds Chemical class 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052594 sapphire Inorganic materials 0.000 claims description 21
- 239000010980 sapphire Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000206 photolithography Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 22
- 230000012010 growth Effects 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229940126082 compound 92a Drugs 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- AVYVHIKSFXVDBG-UHFFFAOYSA-N N-benzyl-N-hydroxy-2,2-dimethylbutanamide Chemical compound C(C1=CC=CC=C1)N(C(C(CC)(C)C)=O)O AVYVHIKSFXVDBG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003019 stabilising effect Effects 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810002965 CN101483212B (zh) | 2008-01-11 | 2008-01-11 | 三族氮化合物半导体发光二极管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810002965 CN101483212B (zh) | 2008-01-11 | 2008-01-11 | 三族氮化合物半导体发光二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101483212A true CN101483212A (zh) | 2009-07-15 |
CN101483212B CN101483212B (zh) | 2011-07-27 |
Family
ID=40880229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810002965 Expired - Fee Related CN101483212B (zh) | 2008-01-11 | 2008-01-11 | 三族氮化合物半导体发光二极管及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101483212B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102339798A (zh) * | 2010-07-22 | 2012-02-01 | 展晶科技(深圳)有限公司 | 复合式基板、氮化镓基元件及氮化镓基元件的制造方法 |
CN101964382B (zh) * | 2009-07-21 | 2012-12-26 | 展晶科技(深圳)有限公司 | 提高光萃取效率的半导体光电结构及其制造方法 |
CN103187495A (zh) * | 2011-12-27 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管芯片及其制造方法 |
CN112382709A (zh) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | 一种防裂纹的AlN外延层制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1812141A (zh) * | 2005-01-27 | 2006-08-02 | 先进开发光电股份有限公司 | 白光发光二极管组件及其制造方法 |
CN1841794B (zh) * | 2005-03-28 | 2010-08-25 | 展晶科技(深圳)有限公司 | 发光二极管组件及其制造方法 |
-
2008
- 2008-01-11 CN CN 200810002965 patent/CN101483212B/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101964382B (zh) * | 2009-07-21 | 2012-12-26 | 展晶科技(深圳)有限公司 | 提高光萃取效率的半导体光电结构及其制造方法 |
CN102339798A (zh) * | 2010-07-22 | 2012-02-01 | 展晶科技(深圳)有限公司 | 复合式基板、氮化镓基元件及氮化镓基元件的制造方法 |
CN102339798B (zh) * | 2010-07-22 | 2014-11-05 | 展晶科技(深圳)有限公司 | 复合式基板、氮化镓基元件及氮化镓基元件的制造方法 |
CN103187495A (zh) * | 2011-12-27 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管芯片及其制造方法 |
CN103187495B (zh) * | 2011-12-27 | 2015-09-02 | 展晶科技(深圳)有限公司 | 发光二极管芯片及其制造方法 |
CN112382709A (zh) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | 一种防裂纹的AlN外延层制造方法 |
CN112382709B (zh) * | 2020-12-03 | 2022-02-25 | 至芯半导体(杭州)有限公司 | 一种防裂纹的AlN外延层制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101483212B (zh) | 2011-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5130433B2 (ja) | 窒化物半導体発光素子及びその製造方法 | |
TWI479683B (zh) | 氮化物半導體發光元件及其製造方法 | |
US20120119187A1 (en) | Nitride semiconductor light emitting device and fabrication method thereof | |
KR101909961B1 (ko) | 광전자 컴포넌트 | |
KR20100093872A (ko) | 질화물 반도체 발광소자 및 그 제조방법 | |
JP2015046598A (ja) | 正孔注入層を備える半導体発光素子及びその製造方法 | |
CN102479897A (zh) | 具有凹坑层的发光二极管装置及其制造方法 | |
TWI445204B (zh) | 具有漸變含量之電洞穿隧層之發光元件 | |
US20090166650A1 (en) | Light-emitting device of group iii nitride-based semiconductor and manufacturing method thereof | |
US9318645B2 (en) | Nitride semiconductor light-emitting element | |
JP4962130B2 (ja) | GaN系半導体発光ダイオードの製造方法 | |
CN104733579A (zh) | 半导体发光器件及其制备方法 | |
JP6010869B2 (ja) | Iii 族窒化物半導体発光素子 | |
KR101781505B1 (ko) | 질화갈륨계 반도체 발광소자 및 그 제조방법 | |
CN101483212B (zh) | 三族氮化合物半导体发光二极管及其制造方法 | |
KR20130099574A (ko) | 질화갈륨 기판을 갖는 발광 다이오드 | |
TWI567877B (zh) | Manufacturing method of nitride semiconductor device | |
CN106206869B (zh) | 一种GaN基发光二极管外延片的生长方法 | |
TWI545798B (zh) | Nitride semiconductor light emitting device and manufacturing method thereof | |
KR101161409B1 (ko) | 질화물계 반도체 발광소자 및 그 제조방법 | |
KR20080082326A (ko) | 발광 다이오드 및 그 제조방법 | |
KR100765722B1 (ko) | 나노 로드를 갖는 발광 소자 및 그의 제조 방법 | |
KR101349604B1 (ko) | 질화갈륨계 발광소자 | |
WO2021056472A1 (zh) | 一种多量子阱结构、光电器件外延片及光电器件 | |
TW202044601A (zh) | 包含基於ingan之p型注入層之光電半導體結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: RONGCHUANG ENERGY TECHNOLOGY CO., LTD. Owner name: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ADVANCED DEVELOPMENT PHOTOELECTRIC CO., LTD. Effective date: 20101117 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: NO. 2, E. RING ROAD 2, INDUSTRY ZONE 10, YOUSONG, LONGHUA SUBDISTRICT OFFICE, BAO'AN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20101117 Address after: No. two, No. 2, East Ring Road, Pinus tabulaeformis Industrial Zone, Longhua, Baoan District, Shenzhen, Guangdong, Applicant after: ZHANJING Technology (Shenzhen) Co.,Ltd. Co-applicant after: Advanced Optoelectronic Technology Inc. Address before: Hsinchu County, Taiwan, China Applicant before: Advanced Development Optoelectronics Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201207 Address after: No.999 Wanshou South Road, Chengnan street, Rugao City, Jiangsu Province (room 8a08-439, building 8, Rugao high tech Zone) Patentee after: RUGAO LANTU KNITTING CLOTHING Co.,Ltd. Address before: No. two, No. 2, East Ring Road, Pinus tabulaeformis Industrial Zone, Longhua, Baoan District, Shenzhen, Guangdong, Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Advanced Optoelectronic Technology Inc. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 |