JP2003158115A5 - - Google Patents
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- JP2003158115A5 JP2003158115A5 JP2002232065A JP2002232065A JP2003158115A5 JP 2003158115 A5 JP2003158115 A5 JP 2003158115A5 JP 2002232065 A JP2002232065 A JP 2002232065A JP 2002232065 A JP2002232065 A JP 2002232065A JP 2003158115 A5 JP2003158115 A5 JP 2003158115A5
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- JP
- Japan
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/925,201 US6709875B2 (en) | 2001-08-08 | 2001-08-08 | Contamination control for embedded ferroelectric device fabrication processes |
| US09/925201 | 2001-08-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003158115A JP2003158115A (ja) | 2003-05-30 |
| JP2003158115A5 true JP2003158115A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2005-10-27 |
| JP4285954B2 JP4285954B2 (ja) | 2009-06-24 |
Family
ID=25451373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002232065A Expired - Fee Related JP4285954B2 (ja) | 2001-08-08 | 2002-08-08 | 埋め込み強誘電体デバイス製作プロセスのための汚染コントロール方法 |
Country Status (4)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5132859B2 (ja) * | 2001-08-24 | 2013-01-30 | ステラケミファ株式会社 | 多成分を有するガラス基板用の微細加工表面処理液 |
| US6767750B2 (en) * | 2001-12-31 | 2004-07-27 | Texas Instruments Incorporated | Detection of AIOx ears for process control in FeRAM processing |
| JP2004087691A (ja) * | 2002-08-26 | 2004-03-18 | Fujitsu Ltd | ゲート絶縁膜を除去する方法 |
| US6876021B2 (en) * | 2002-11-25 | 2005-04-05 | Texas Instruments Incorporated | Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier |
| KR100504693B1 (ko) * | 2003-02-10 | 2005-08-03 | 삼성전자주식회사 | 강유전체 메모리 소자 및 그 제조방법 |
| US20050037521A1 (en) * | 2003-08-15 | 2005-02-17 | Uwe Wellhausen | Methods and apparatus for processing semiconductor devices by gas annealing |
| WO2005067051A1 (ja) * | 2003-12-26 | 2005-07-21 | Fujitsu Limited | 半導体装置、半導体装置の製造方法 |
| US7180141B2 (en) * | 2004-12-03 | 2007-02-20 | Texas Instruments Incorporated | Ferroelectric capacitor with parallel resistance for ferroelectric memory |
| KR100722128B1 (ko) * | 2005-12-28 | 2007-05-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조방법 |
| US7572698B2 (en) * | 2006-05-30 | 2009-08-11 | Texas Instruments Incorporated | Mitigation of edge degradation in ferroelectric memory devices through plasma etch clean |
| JP5109395B2 (ja) * | 2007-02-14 | 2012-12-26 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US8269204B2 (en) * | 2009-07-02 | 2012-09-18 | Actel Corporation | Back to back resistive random access memory cells |
| US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
| CN103087718B (zh) * | 2013-01-16 | 2014-12-31 | 四川大学 | 湿法刻蚀镍酸镧薄膜和铁电薄膜/镍酸镧复合薄膜的腐蚀液及其制备方法 |
| US9041919B2 (en) | 2013-02-18 | 2015-05-26 | Globalfoundries Inc. | Infrared-based metrology for detection of stress and defects around through silicon vias |
| JP2016184677A (ja) * | 2015-03-26 | 2016-10-20 | 株式会社ユーテック | 強誘電体膜の製造方法 |
| JP2017098367A (ja) * | 2015-11-20 | 2017-06-01 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5046043A (en) | 1987-10-08 | 1991-09-03 | National Semiconductor Corporation | Ferroelectric capacitor and memory cell including barrier and isolation layers |
| US5258093A (en) * | 1992-12-21 | 1993-11-02 | Motorola, Inc. | Procss for fabricating a ferroelectric capacitor in a semiconductor device |
| US6051858A (en) | 1996-07-26 | 2000-04-18 | Symetrix Corporation | Ferroelectric/high dielectric constant integrated circuit and method of fabricating same |
| US6114254A (en) | 1996-10-15 | 2000-09-05 | Micron Technology, Inc. | Method for removing contaminants from a semiconductor wafer |
| US5807774A (en) | 1996-12-06 | 1998-09-15 | Sharp Kabushiki Kaisha | Simple method of fabricating ferroelectric capacitors |
| US5773314A (en) | 1997-04-25 | 1998-06-30 | Motorola, Inc. | Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells |
| JPH10340893A (ja) * | 1997-06-09 | 1998-12-22 | Sony Corp | 電子薄膜材料のエッチング方法 |
| US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
| US6225156B1 (en) * | 1998-04-17 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same |
| US6174735B1 (en) | 1998-10-23 | 2001-01-16 | Ramtron International Corporation | Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation |
| US6140672A (en) * | 1999-03-05 | 2000-10-31 | Symetrix Corporation | Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor |
| JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
| JP2000315670A (ja) * | 1999-04-30 | 2000-11-14 | Nec Corp | 半導体基板の洗浄方法 |
| KR100329759B1 (ko) * | 1999-06-30 | 2002-03-25 | 박종섭 | 강유전체 캐패시터 형성 방법 |
| JP2001068463A (ja) * | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 半導体集積回路装置の量産方法 |
| US6261892B1 (en) * | 1999-12-31 | 2001-07-17 | Texas Instruments Incorporated | Intra-chip AC isolation of RF passive components |
| JP2002231676A (ja) * | 2001-01-30 | 2002-08-16 | Toshiba Corp | ウェハ洗浄方法及びウェハ洗浄装置 |
| JP2002353182A (ja) * | 2001-05-25 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の洗浄方法および洗浄装置、ならびに半導体装置の製造方法 |
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2001
- 2001-08-08 US US09/925,201 patent/US6709875B2/en not_active Expired - Fee Related
-
2002
- 2002-07-10 DE DE10231192A patent/DE10231192A1/de not_active Withdrawn
- 2002-08-07 KR KR1020020046627A patent/KR100880109B1/ko not_active Expired - Fee Related
- 2002-08-08 JP JP2002232065A patent/JP4285954B2/ja not_active Expired - Fee Related