JP2003140351A5 - - Google Patents

Claims (4)

(A) Resin (A) having a structural unit containing a group represented by the following general formula (X) and decomposed by the action of an acid to increase the solubility in an alkali developer and / or the following general formula (Y A resin (B) having a structural unit containing a group represented by
(B) A positive resist composition comprising a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (c) a compound represented by the following general formula (Q).
In general formula (X), R ¹ and R ² may be the same or different and each represents a hydrogen atom or an alkyl group which may have a substituent. m represents an integer of 1 to 20.
In the above formula, R ³ represents an alkyl group, aryl group or aralkyl group which may have a substituent. n represents an integer of 0 to 5.
In general formula (Y), R ⁴ represents an alkyl group.
In general formula (Q), R ⁵ represents a monovalent organic group which may have a substituent. R ⁶ and R ⁷ may be the same or different and each represents a hydrogen atom or an alkyl group. X represents an alkylene group which may have a substituent. Y represents a divalent linking group. Z ² represents a heterocyclic group which may have a substituent. l represents 0 or 1; 2. The positive resist composition according to claim 1, wherein the compound that generates an acid upon irradiation with actinic rays or radiation in (b) is a compound having a sulfonium salt structure or a compound having a diazodisulfone structure. 2. The positive resist composition according to claim 1, wherein the compound that generates an acid upon irradiation with actinic rays or radiation in (b) is a compound having a sulfonium salt structure and a compound having a diazodisulfone structure. A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.