JP2003140351A - Positive resist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive resist composition in which the change rate in line width due to the change in the film thickness of a resist on a highly reflective substrate having a rough surface is significantly suppressed. SOLUTION: The positive resist composition is characterized in containing (A) a resin which has a structural unit containing an acid-decomposing group having a specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkali developing solution and/or (B) a resin which has a structural unit containing an acid-decomposing group having another specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkali developing solution, a compound which generates an acid by irradiation of active rays or radiation, and a specified compound.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive resist composition used for manufacturing semiconductor integrated circuit devices, integrated circuit manufacturing masks, printed wiring boards, liquid crystal panels and the like.

[0002]

2. Description of the Related Art As positive resist compositions, there are chemically amplified resist compositions described in US Pat. No. 4,491,628 and European Patent 29,139. The chemically amplified positive resist composition generates an acid in the exposed area by irradiation with radiation such as far-ultraviolet light, and the acid-catalyzed reaction causes the solubility in the developing solution of the irradiated area and the non-irradiated area of active radiation. Is a pattern forming material that changes the temperature and forms a pattern on the substrate.

The above chemically amplified positive resist composition comprises an alkali-soluble resin, a compound which generates an acid upon exposure to radiation (photo-acid generator), and a dissolution inhibiting compound for an alkali-soluble resin having an acid-decomposable group. A three-component system, a two-component system comprising a resin having a group which is decomposed by reaction with an acid to be alkali-soluble and a photoacid generator, and a resin having a group which is decomposed by reaction with an acid to be alkali-soluble, It can be roughly classified into a hybrid system composed of a low molecular weight dissolution inhibiting compound having an acid-decomposable group and a photo-acid generator.

[0004]

The above chemically amplified positive resist composition has been generally developed for use as a low reflectance substrate having an antireflection film formed thereon. For this reason, on a highly reflective substrate (bare silicon substrate, polysilicon substrate, etc.) with unevenness that does not use an antireflection film, the line width variation rate due to the resist film thickness variation is large, and the desired line width cannot be reproduced. I was holding. Therefore, an object of the present invention is to provide a chemically amplified positive resist composition having a smaller line width variation rate and a performance that does not cause actual damage even on a highly reflective substrate having irregularities.

[0005]

Means for Solving the Problems The present inventor has made extensive studies in view of the above circumstances, and as a result, the above object was achieved by using a resin having an acid-decomposable group having a specific structure and a specific compound. The present invention has been completed. That is, the positive resist composition according to the present invention has the following constitution.

(1) (a) A resin (A) having a structural unit containing a group represented by the following general formula (X), which is decomposed by the action of an acid to increase its solubility in an alkaline developer.
And / or a resin (B), (b) actinic ray or radiation which has a structural unit containing a group represented by the following general formula (Y) and decomposes by the action of an acid to increase the solubility in an alkaline developer. A positive resist composition containing a compound capable of generating an acid upon irradiation with, and (c) a compound represented by the following general formula (Q).

[0007]

[Chemical 5]

In the general formula (X), R ¹ and R ² may be the same or different and represent a hydrogen atom or an alkyl group which may have a substituent. m represents an integer of 1 to 20.

[0009]

[Chemical 6]

In the above formula, R ³ represents an alkyl group, an aryl group or an aralkyl group which may have a substituent. n represents an integer of 0 to 5.

[0011]

[Chemical 7]

In the general formula (Y), R ⁴ represents an alkyl group.

[0013]

[Chemical 8]

In the general formula (Q), R ⁵ represents a monovalent organic group which may have a substituent. R ⁶ and R ^{7, which} may be the same or different, each represents a hydrogen atom or an alkyl group.
X represents an alkylene group which may have a substituent.
Y represents a divalent linking group. Z ² represents a heterocyclic group which may have a substituent. l represents 0 or 1.

(2) The compound (b) which generates an acid upon irradiation with actinic rays or radiation is a compound having a sulfonium salt structure or a compound having a diazodisulfone structure, according to (1). Positive resist composition.

(3) The compound (b), which generates an acid upon irradiation with actinic rays or radiation, is a compound having a sulfonium salt structure or a compound having a diazodisulfone structure. Positive resist composition.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below. (A-1) a resin (A) having a structural unit containing a group represented by the general formula (X), which is decomposed by the action of an acid to increase the solubility in an alkali developing solution; R ¹ and R ^{2, which} may be the same or different, each represents a hydrogen atom or an alkyl group which may have a substituent. m represents an integer of 1 to 20. Examples of the alkyl group of R ¹ and R ² include linear, branched and cyclic alkyl groups. The linear alkyl group preferably has 1 to 30 carbon atoms, and more preferably 1 to 30 carbon atoms.
20, for example, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group,
Examples thereof include n-decanyl group. The branched alkyl group preferably has 1 to 30 carbon atoms, and more preferably 1 to 20 carbon atoms. For example, i-propyl group, i-butyl group, t-butyl group, i-pentyl group, t-pentyl group. Base,
i-hexyl group, t-hexyl group, i-heptyl group, t
-Heptyl group, i-octyl group, t-octyl group, i-
Examples thereof include nonyl group and t-decanoyl group. The cyclic alkyl group preferably has 3 to 30 carbon atoms, more preferably 3 to 20 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclononyl group, Examples thereof include a cyclodecanoyl group.

In Z ¹ , R ³ represents an alkyl group which may have a substituent, an aryl group which may have a substituent or an aralkyl group which may have a substituent. Examples of the alkyl group include linear, branched and cyclic alkyl groups. n represents an integer of 0 to 5. The linear or branched alkyl group for R ³ preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms,
For example, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, t-butyl group, n-pentyl group, i-pentyl group, t-pentyl group, n- Hexyl group, i-hexyl group, t-hexyl group, n-heptyl group, i-heptyl group, t-heptyl group, n-octyl group, i-octyl group, t-octyl group, n-nonyl group, i- Nonyl group, t-nonyl group, n-
Decanyl group, i-decanyl group, t-decanyl group, n-undecyl group, i-undecyl group, n-dodecyl group, i-
Dodecyl group, n-tridecyl group, i-tridecyl group, n
-Tetradecyl group, i-tetradecyl group, n-pentadecyl group, i-pentadecyl group, n-hexadecyl group, i
-Hexadecyl group, n-heptadecyl group, i-heptadecyl group, n-octadecyl group, i-octadecyl group, n
Examples thereof include -nonadecyl group and i-nonadecyl group.

The cyclic alkyl group for R ³ preferably has 3 to 30 carbon atoms, and more preferably 3 to 20 carbon atoms.
And may be a cyclic alkyl having a substituent even when forming a ring having up to 20 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, and a cyclononyl group. , A cyclodecanyl group, a cycloundecyl group,
Cyclododecyl group, cyclotridecyl group, cyclotridecyl group, cyclotetradecyl group, cyclopentadecyl group, cyclohexadecyl group, cycloheptadecyl group, cyclooctadecyl group, cyclononadecyl group, 4-cyclohexylcyclohexyl group, 4-n Examples thereof include a hexylcyclohexyl group, a pentanylcyclohexyl group, a hexyloxycyclohexyl group, and a pentanyloxycyclohexyl group. Substituted cyclic alkyl groups other than those mentioned here can also be used within the above range.

The aryl group represented by R ³ preferably has 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, and examples thereof include a phenyl group, a 4-methylphenyl group and a 3-methyl group.
Methylphenyl group, 2-methylphenyl group, 4-ethylphenyl group, 3-ethylphenyl group, 2-ethylphenyl group, 4-n-propylphenyl group, 3-n-propylphenyl group, 2-n-propylphenyl group Group, 4-i-propylphenyl group, 3-i-propylphenyl group, 2-
i-Propylphenyl group, 4-cyclopropylphenyl group, 3-cyclopropylphenyl group, 2-cyclopropylphenyl group, 4-n-butylphenyl group, 3-n-butylphenyl group, 2-n-butylphenyl group , 4-i-
Butylphenyl group, 3-i-butylphenyl group, 2-i
-Butylphenyl group, 4-t-butylphenyl group, 3-
t-butylphenyl group, 2-t-butylphenyl group, 4
-Cyclobutylphenyl group, 3-cyclobutylphenyl group, 2-cyclobutylphenyl group, 4-cyclopentylphenyl group, 4-cyclohexylphenyl group, 4-cycloheptenylphenyl group, 4-cyclooctanylphenyl group, 2- Cyclopentylphenyl group, 2-cyclohexylphenyl group, 2-cycloheptenylphenyl group, 2
-Cyclooctanylphenyl group, 3-cyclopentylphenyl group, 3-cyclohexylphenyl group, 3-cycloheptenylphenyl group, 3-cyclooctanylphenyl group, 4-cyclopentyloxyphenyl group, 4-cyclohexyloxyphenyl group, 4 -Cycloheptenyloxyphenyl group, 4-cyclooctanyloxyphenyl group, 2-cyclopentyloxyphenyl group, 2-cyclohexyloxyphenyl group, 2-cycloheptenyloxyphenyl group, 2-cyclooctanyloxyphenyl group, 3 -Cyclopentyloxyphenyl group, 3-cyclohexyloxyphenyl group, 3-cycloheptenyloxyphenyl group, 3-cyclooctanyloxyphenyl group, 4-n-pentylphenyl group, 4-n-hexylphenyl group, 4-n -Hep Nirufeniru group, 4-n-octanyl phenyl group, 2-n-pentyl phenyl group, 2
-N-hexylphenyl group, 2-n-heptenylphenyl group, 2-n-octanylphenyl group, 3-n-pentylphenyl group, 3-n-hexylphenyl group, 3-n-
Heptenylphenyl group, 3-n-octanylphenyl group, 2,6-di-isopropylphenyl group, 2,3-di-isopropylphenyl group, 2,4-di-isopropylphenyl group, 3,4-di- Isopropylphenyl group,
3,6-di-t-butylphenyl group, 2,3-di-t-
Butylphenyl group, 2,4-di-t-butylphenyl group, 3,4-di-t-butylphenyl group, 2,6-di-
n-butylphenyl group, 2,3-di-n-butylphenyl group, 2,4-di-n-butylphenyl group, 3,4-di-n-butylphenyl group, 2,6-di-i- Butylphenyl group, 2,3-di-i-butylphenyl group, 2,4-
Di-i-butylphenyl group, 3,4-di-i-butylphenyl group, 2,6-di-t-amylphenyl group, 2,3
-Di-t-amylphenyl group, 2,4-di-t-amylphenyl group, 3,4-di-t-amylphenyl group, 2,
6-di-i-amylphenyl group, 2,3-di-i-amylphenyl group, 2,4-di-i-amylphenyl group,
3,4-di-i-amylphenyl group, 2,6-di-n-
Pentylphenyl group, 2,3-di-n-pentylphenyl group, 2,4-di-n-pentylphenyl group, 3,4-
Di-n-pentylphenyl group, 4-adamantylphenyl group, 2-adamantylphenyl group, 4-isobornylphenyl group, 3-isobornylphenyl group, 2-isobornylphenyl group, 4-cyclopentyloxyphenyl group , 4-cyclohexyloxyphenyl group, 4-cycloheptenyloxyphenyl group, 4-cyclooctanyloxyphenyl group, 2-cyclopentyloxyphenyl group, 2-cyclohexyloxyphenyl group, 2-cycloheptenyloxyphenyl group, 2 -Cyclooctanyloxyphenyl group, 3-cyclopentyloxyphenyl group, 3-cyclohexyloxyphenyl group, 3-cycloheptenyloxyphenyl group, 3-cyclooctanyloxyphenyl group, 4-n-pentyloxyphenyl group,
4-n-hexyloxyphenyl group, 4-n-heptenyloxyphenyl group, 4-n-octanyloxyphenyl group, 2-n-pentyloxyphenyl group, 2-n-hexyloxyphenyl group, 2-n -Heptenyloxyphenyl group, 2-n-octanyloxyphenyl group, 3-
n-pentyloxyphenyl group, 3-n-hexyloxyphenyl group, 3-n-heptenyloxyphenyl group,
3-n-octanyloxyphenyl group, 2,6-di-isopropyloxyphenyl group, 2,3-di-isopropyloxyphenyl group, 2,4-di-isopropyloxyphenyl group, 3,4-di-isopropyl Oxyphenyl group, 2,6-di-t-butyloxyphenyl group, 2,3
-Di-t-butyloxyphenyl group, 2,4-di-t-
Butyloxyphenyl group, 3,4-di-t-butyloxyphenyl group, 2,6-di-n-butyloxyphenyl group, 2,3-di-n-butyloxyphenyl group, 2,4
-Di-n-butyloxyphenyl group, 3,4-di-n-
Butyloxyphenyl group, 2,6-di-i-butyloxyphenyl group, 2,3-di-i-butyloxyphenyl group, 2,4-di-i-butyloxyphenyl group, 3,4
-Di-i-butyloxyphenyl group, 2,6-di-t-
Amyloxyphenyl group, 2,3-di-t-amyloxyphenyl group, 2,4-di-t-amyloxyphenyl group, 3,4-di-t-amyloxyphenyl group, 2,6
-Di-i-amyloxyphenyl group, 2,3-di-i-
Amyloxyphenyl group, 2,4-di-i-amyloxyphenyl group, 3,4-di-i-amyloxyphenyl group, 2,6-di-n-pentyloxyphenyl group, 2,
3-di-n-pentyloxyphenyl group, 2,4-di-
n-pentyloxyphenyl group, 3,4-di-n-pentyloxyphenyl group, 4-adamantyloxyphenyl group, 3-adamantyloxyphenyl group, 2-adamantyloxyphenyl group, 4-isobornyloxyphenyl group, Examples thereof include a 3-isobornyloxyphenyl group and a 2-isobornyloxyphenyl group, and these may be further substituted as long as they are within the above range, and the substituents are not limited to the above examples.

The aralkyl group of R ³ preferably has 7 to 30 carbon atoms, more preferably 7 to 20 carbon atoms, and examples thereof include a phenylethyl group, a 4-methylphenylethyl group, a 3-methylphenylethyl group, 2-methylphenylethyl group, 4-ethylphenylethyl group, 3-ethylphenylethyl group, 2-ethylphenylethyl group, 4
-N-propylphenylethyl group, 3-n-propylphenylethyl group, 2-n-propylphenylethyl group,
4-i-propylphenylethyl group, 3-i-propylphenylethyl group, 2-i-propylphenylethyl group, 4-cyclopropylphenylethyl group, 3-cyclopropylphenylethyl group, 2-cyclopropylphenylethyl group , 4-n-butylphenylethyl group, 3-n
-Butylphenylethyl group, 2-n-butylphenylethyl group, 4-i-butylphenylethyl group, 3-i-butylphenylethyl group, 2-i-butylphenylethyl group, 4-t-butylphenylethyl group , 3-t-butylphenylethyl group, 2-t-butylphenylethyl group,
4-cyclobutylphenylethyl group, 3-cyclobutylphenylethyl group, 2-cyclobutylphenylethyl group, 4-cyclopentylphenylethyl group, 4-cyclohexylphenylethyl group, 4-cycloheptenylphenylethyl group, 4-cyclo Octanylphenylethyl group, 2-cyclopentylphenylethyl group, 2-cyclohexylphenylethyl group, 2-cycloheptenylphenylethyl group, 2-cyclooctanylphenylethyl group, 3-cyclopentylphenylethyl group, 3-cyclohexylphenylethyl group Group, 3-cycloheptenylphenylethyl group, 3-cyclooctanylphenylethyl group, 4-cyclopentyloxyphenylethyl group, 4-
Cyclohexyloxyphenylethyl group, 4-cycloheptenyloxyphenylethyl group, 4-cyclooctanyloxyphenylethyl group, 2-cyclopentyloxyphenylethyl group, 2-cyclohexyloxyphenylethyl group, 2-cycloheptenyloxyphenylethyl group Group, 2-cyclooctanyloxyphenylethyl group, 3
-Cyclopentyloxyphenylethyl group, 3-cyclohexyloxyphenylethyl group, 3-cycloheptenyloxyphenylethyl group, 3-cyclooctanyloxyphenylethyl group, 4-n-pentylphenylethyl group, 4-n-hexylphenyl Ethyl group, 4-n-heptenylphenylethyl group, 4-n-octanylphenylethyl group, 2-n-pentylphenylethyl group, 2-n
-Hexylphenylethyl group, 2-n-heptenylphenylethyl group, 2-n-octanylphenylethyl group,
3-n-pentylphenylethyl group, 3-n-hexylphenylethyl group, 3-n-heptenylphenylethyl group, 3-n-octanylphenylethyl group, 2,6-di-isopropylphenylethyl group, 2 , 3-di-isopropylphenylethyl group, 2,4-di-isopropylphenylethyl group, 3,4-di-isopropylphenylethyl group, 2,6-di-t-butylphenylethyl group,
2,3-di-t-butylphenylethyl group, 2,4-di-t-butylphenylethyl group, 3,4-di-t-butylphenylethyl group, 2,6-di-n-butylphenylethyl group Group, 2,3-di-n-butylphenylethyl group,
2,4-di-n-butylphenylethyl group, 3,4-di-n-butylphenylethyl group, 2,6-di-i-butylphenylethyl group, 2,3-di-i-butylphenylethyl Group, 2,4-di-i-butylphenylethyl group,
3,4-di-i-butylphenylethyl group, 2,6-di-t-amylphenylethyl group, 2,3-di-t-amylphenylethyl group, 2,4-di-t-amylphenylethyl group Group, 3,4-di-t-amylphenylethyl group,
2,6-di-i-amylphenylethyl group, 2,3-di-i-amylphenylethyl group, 2,4-di-i-amylphenylethyl group, 3,4-di-i-amylphenylethyl group Group, 2,6-di-n-pentylphenylethyl group, 2,3-di-n-pentylphenylethyl group, 2,
4-di-n-pentylphenylethyl group, 3,4-di-
n-pentylphenylethyl group, 4-adamantylphenylethyl group, 3-adamantylphenylethyl group, 2
-Adamantylphenylethyl group, 4-isobornylphenylethyl group, 3-isobornylphenylethyl group,
2-isoboronylphenylethyl group, 4-cyclopentyloxyphenylethyl group, 4-cyclohexyloxyphenylethyl group, 4-cycloheptenyloxyphenylethyl group, 4-cyclooctanyloxyphenylethyl group, 2-cyclopentyloxyphenyl group Ethyl group, 2
-Cyclohexyloxyphenylethyl group, 2-cycloheptenyloxyphenylethyl group, 2-cyclooctanyloxyphenylethyl group, 3-cyclopentyloxyphenylethyl group, 3-cyclohexyloxyphenylethyl group, 3-cycloheptenyloxyphenyl group Ethyl group, 3-cyclooctanyloxyphenylethyl group,
4-n-pentyloxyphenylethyl group, 4-n-hexyloxyphenylethyl group, 4-n-heptenyloxyphenylethyl group, 4-n-octanyloxyphenylethyl group, 2-n-pentyloxyphenyl group Ethyl group, 2-n-hexyloxyphenylethyl group, 2-n
-Heptenyloxyphenylethyl group, 2-n-octanyloxyphenylethyl group, 3-n-pentyloxyphenylethyl group, 3-n-hexyloxyphenylethyl group, 3-n-heptenyloxyphenylethyl group,
3-n-octanyloxyphenylethyl group, 2,6-
Diisopropyloxyphenylethyl group, 2,3-di-isopropyloxyphenylethyl group, 2,4-di-
Isopropyloxyphenylethyl group, 3,4-diisopropyloxyphenylethyl group, 2,6-di-t-
Butyloxyphenylethyl group, 2,3-di-t-butyloxyphenylethyl group, 2,4-di-t-butyloxyphenylethyl group, 3,4-di-t-butyloxyphenylethyl group, 2, 6-di-n-butyloxyphenylethyl group, 2,3-di-n-butyloxyphenylethyl group, 2,4-di-n-butyloxyphenylethyl group, 3,4-di-n-butyloxy Phenylethyl group, 2,6-di-i-butyloxyphenylethyl group,
2,3-di-i-butyloxyphenylethyl group, 2,
4-di-i-butyloxyphenylethyl group, 3,4-
Di-i-butyloxyphenylethyl group, 2,6-di-
t-amyloxyphenylethyl group, 2,3-di-t-
Amyloxyphenylethyl group, 2,4-di-t-amyloxyphenylethyl group, 3,4-di-t-amyloxyphenylethyl group, 2,6-di-i-amyloxyphenylethyl group, 2, 3-di-i-amyloxyphenylethyl group, 2,4-di-i-amyloxyphenylethyl group, 3,4-di-i-amyloxyphenylethyl group, 2,6-di-n-pentyloxy Phenylethyl group, 2,3-di-n-pentyloxyphenylethyl group, 2,4-di-n-pentyloxyphenylethyl group, 3,4-di-n-pentyloxyphenylethyl group, 4-adamantyloxy Phenylethyl group, 3-adamantyloxyphenylethyl group, 2-adamantyloxyphenylethyl group, 4-isobornyloxyphenylethyl group, 3-iso B sulfonyloxy phenylethyl group, 2-isobornyl-oxy-phenylethyl group, or the alkyl is a methyl group, propyl group, and replaced with a butyl group and the like.

Further, as a further substituent of the above group, a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine),
Nitro group, cyano group, the above alkyl group, methoxy group,
Ethoxy group, hydroxyethoxy group, propoxy group, hydroxypropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group, alkoxy group such as t-butoxy group, methoxycarbonyl group, alkoxycarbonyl group such as ethoxycarbonyl group, benzyl Group, phenethyl group, aralkyl group such as cumyl group, aralkyloxy group,
Formyl group, acetyl group, butyryl group, benzoyl group,
Cyanamyl group, acyl group such as valeryl group, acyloxy group such as butyryloxy group, the above alkenyl group, vinyloxy group, propenyloxy group, allyloxy group, alkenyloxy group such as butenyloxy group, the above aryl group, aryl such as phenoxy group Examples thereof include an aryloxycarbonyl group such as an oxy group and a benzoyloxy group.

The substituent for R ³ is preferably
An alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 20 carbon atoms. These substituents may further have a substituent.

Specific examples of the group represented by formula (X) are shown below, but the group is not limited to these.

[0025]

[Chemical 9]

[0026]

[Chemical 10]

The resin (A) having a structural unit containing a group represented by the general formula (X) in the present invention, which is decomposed by the action of an acid to increase the solubility in an alkali developing solution (hereinafter, represented by the general formula ( Also referred to as a resin having a group represented by X))
Is a compound having a structure in which an acid-decomposable group represented by the general formula (X) is introduced into a compound having a molecular weight distribution obtained by polymerizing a monomer, and which is alkali-soluble by the action of an acid. is there. The resin having a group represented by the general formula (X) is a resin having a group represented by the general formula (X) in the main chain or side chain of the resin, or in both the main chain and the side chain. Among these, a resin having a group represented by the general formula (X) in its side chain is more preferable. Next, as the mother resin when the group represented by the general formula (X) is bonded as a side chain,
-OH or -COOH in the side chain, preferably -R ⁰ -
It is an alkali-soluble resin having a COOH or -Ar-OH group. Here, -R ⁰ - represents an aliphatic or aromatic hydrocarbon divalent or more which may have a substituent, -
Ar- represents a divalent or higher aromatic group which may have a monocyclic or polycyclic substituent.

The base resin preferred in the present invention is an alkali-soluble resin having a phenolic hydroxyl group. The alkali-soluble resin having a phenolic hydroxyl group used in the present invention is o-, m- or p-hydroxystyrene (collectively referred to as hydroxystyrene), or o-, m- or p-hydroxy-α-. A copolymer or homopolymer thereof containing at least 30 mol%, preferably 50 mol% or more of a repeating unit corresponding to methylstyrene (collectively referred to as hydroxy-α-methylstyrene), or a benzene nucleus of the unit. Is preferably a partially hydrogenated resin, more preferably a p-hydroxystyrene homopolymer. As monomers other than hydroxystyrene and hydroxy-α-methylstyrene for preparing the copolymer by copolymerization, acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, acrylonitrile, methacrylonitrile, Maleic anhydride, styrene, α-methylstyrene, acetoxystyrene, alkoxystyrenes are preferred, styrene,
Acetoxystyrene and t-butoxystyrene are more preferable.

In the present invention, the content of the repeating unit (structural unit) having a group represented by the general formula (X) in such a resin is 5 mol% to 50 mol% with respect to all repeating units. Preferably, more preferably 5 mol%
It is 30 mol%.

In the present invention, the resin having a group represented by the general formula (X) may contain other acid-decomposable group in addition to the group represented by the general formula (X).

The resin containing a group represented by the general formula (X) is prepared by synthesizing a corresponding vinyl ether and reacting it with a phenolic hydroxyl group-containing alkali-soluble resin dissolved in a suitable solvent such as tetrahydrofuran by a known method. Can be obtained at The reaction is usually carried out in the presence of an acidic catalyst, preferably an acidic ion exchange resin, hydrochloric acid, p-toluenesulfonic acid, or a salt such as pyridinium tosylate. The corresponding vinyl ether can be synthesized from an active raw material such as chloroethyl vinyl ether by a method such as a nucleophilic substitution reaction,
It can also be synthesized using mercury or a palladium catalyst. As another method, it can be synthesized by a method of acetal exchange using a corresponding alcohol and vinyl ether. In this case, it is carried out in the presence of an acid such as p-toluenesulfonic acid or pyridinium tosylate by allowing the alcohol to have a substituent to be introduced and mixing a relatively unstable vinyl ether such as t-butyl vinyl ether as the vinyl ether. .

Preferred specific structures of the resin (A) having a group represented by the general formula (X) are shown below, but the present invention is not limited thereto.

[0033]

[Chemical 11]

[0034]

[Chemical 12]

[0035]

[Chemical 13]

[0036]

[Chemical 14]

[0037]

[Chemical 15]

[0038]

[Chemical 16]

The molecular weight of the resin (A) is the weight average (Mw:
2,000 or more, preferably 3,
000 to 200,000, more preferably 5,0
It is from 00 to 70,000. In addition, the degree of dispersion (Mw / M
n) is preferably 1.0 to 4.0, more preferably 1.0 to 3.5, and particularly preferably 1.0 to 3.0. The smaller the dispersity, the higher the heat resistance and the image forming property. Good (pattern profile, defocus latitude, etc.).

(A-2) Resin (B) having a structural unit containing a group represented by the general formula (Y), which is decomposed by the action of an acid to increase the solubility in an alkali developing solution (B) R ⁴ in Y) represents an alkyl group. As the alkyl group, a linear or branched alkyl group having 1 to 4 carbon atoms is preferable, and examples thereof include a methyl group, an ethyl group and n-.
Examples thereof include a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group and a t-butyl group. Specific examples of the group represented by the general formula (Y) are shown below, but the group is not limited thereto.

[0041]

[Chemical 17]

The resin (B) having a structural unit containing a group represented by the general formula (Y) in the present invention, which is decomposed by the action of an acid to increase the solubility in an alkali developing solution (hereinafter, represented by the general formula ( Also referred to as a resin having a group represented by Y))
Is a compound having a structure in which an acid-decomposable group represented by the general formula (Y) is introduced into a compound having a molecular weight distribution obtained by polymerizing a monomer, and which is alkali-soluble by the action of an acid. is there. The resin having a group represented by the general formula (Y) is a resin having a group represented by the general formula (Y) in the main chain or side chain of the resin, or in both the main chain and the side chain. Among these, a resin having a group represented by the general formula (Y) in its side chain is more preferable. Next, as the base resin when the group represented by the general formula (Y) is bonded as a side chain,
-OH or -COOH in the side chain, preferably -R ⁰ -
It is an alkali-soluble resin having a COOH or -Ar-OH group. Here, -R ⁰ - represents an aliphatic or aromatic hydrocarbon divalent or more which may have a substituent, -
Ar- represents a divalent or higher aromatic group which may have a monocyclic or polycyclic substituent.

The base resin preferred in the present invention is an alkali-soluble resin having a phenolic hydroxyl group. The alkali-soluble resin having a phenolic hydroxyl group used in the present invention is o-, m- or p-hydroxystyrene (collectively referred to as hydroxystyrene), or o-, m- or p-hydroxy-α-. A copolymer or homopolymer thereof containing at least 30 mol%, preferably 50 mol% or more of a repeating unit corresponding to methylstyrene (collectively referred to as hydroxy-α-methylstyrene), or a benzene nucleus of the unit. Is preferably a partially hydrogenated resin, more preferably a p-hydroxystyrene homopolymer. As monomers other than hydroxystyrene and hydroxy-α-methylstyrene for preparing the copolymer by copolymerization, acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, acrylonitrile, methacrylonitrile, Maleic anhydride, styrene, α-methylstyrene, acetoxystyrene, alkoxystyrenes are preferred, styrene,
Acetoxystyrene and t-butoxystyrene are more preferable.

In the present invention, the content of the repeating unit (structural unit) having a group represented by the general formula (Y) in such a resin is 5 mol% to 70 mol% with respect to all repeating units. Preferably, more preferably 5 mol%
It is 50 mol%.

In the present invention, the resin having a group represented by the general formula (Y) may contain another acid-decomposable group in addition to the group represented by the general formula (Y).

The resin containing a group represented by the general formula (Y) is prepared by synthesizing a corresponding vinyl ether and reacting it with a phenolic hydroxyl group-containing alkali-soluble resin dissolved in a suitable solvent such as tetrahydrofuran by a known method. Can be obtained at The reaction is usually carried out in the presence of an acidic catalyst, preferably an acidic ion exchange resin, hydrochloric acid, p-toluenesulfonic acid, or a salt such as pyridinium tosylate. The corresponding vinyl ether can be synthesized from an active raw material such as chloroethyl vinyl ether by a method such as a nucleophilic substitution reaction,
It can also be synthesized using mercury or a palladium catalyst. As another method, it can be synthesized by a method of acetal exchange using a corresponding alcohol and vinyl ether. In this case, it is carried out in the presence of an acid such as p-toluenesulfonic acid or pyridinium tosylate by allowing the alcohol to have a substituent to be introduced and mixing a relatively unstable vinyl ether such as t-butyl vinyl ether as the vinyl ether. .

The preferred specific structures of the resin (B) having a group represented by the above general formula (Y) are shown below, but the contents of the present invention are not limited thereto.

[0048]

[Chemical 18]

[0049]

[Chemical 19]

The molecular weight of the resin (B) is the weight average (Mw:
2,000 or more, preferably 3,
000 to 200,000, more preferably 5,0
It is from 00 to 70,000. In addition, the degree of dispersion (Mw / M
n) is preferably 1.0 to 4.0, more preferably 1.0 to 3.5, and particularly preferably 1.0 to 3.0. The smaller the dispersity, the higher the heat resistance and the image forming property. Good (pattern profile, defocus latitude, etc.).

In the positive resist composition according to the present invention, the content of the resin (A) and / or the resin (B) is 99.998 based on the solid content of the positive resist composition.
-25% by weight, preferably 95-40% by weight
Is more preferable.

(B) Compound that Generates Acid by Irradiation with Actinic Rays or Radiation (Photoacid Generator) The photoacid generator (b) used in the present invention is a compound that generates an acid by irradiation with actinic rays or radiation. Is. The photo-acid generator used in the present invention is used in photo-initiator for photo-cationic polymerization, photo-initiator for photo-radical polymerization, photo-decoloring agent for dyes, photo-discoloring agent, micro resist, etc. Known light (40
0 to 200 nm ultraviolet ray, far ultraviolet ray, particularly preferably,
g line, h line, i line, KrF excimer laser light), Ar
A compound that generates an acid by F excimer laser light, an electron beam, an X-ray, a molecular beam or an ion beam, and a mixture thereof can be appropriately selected and used.

Other photoacid generators used in the present invention include, for example, diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, arsonium salts, and other onium salts,
Organic halogen compounds, organic metal / organic halides, o
Examples thereof include a photoacid generator having a nitrobenzyl-type protecting group, a compound represented by iminosulfonate and the like, which photolyzes to generate a sulfonic acid, a disulfone compound, a diazoketosulfone, a diazodisulfone compound.
Further, a group in which an acid-generating group or a compound is introduced into the main chain or side chain of a polymer can be used.

Further, VNR Villai, Synthesis, (1), 1 (198
0), A. Abad et al, Tetrahedron Lett., (47) 4555 (1971),
DHR Barton et al., J. Chem. Soc., (C), 329 (1970), U.S. Pat. No. 3,779,778, European Patent 126,712 and the like which generate an acid by light can also be used.

Among the above-mentioned photo-acid generators, those which are particularly effectively used will be described below. (1) The following general formula (PAG) substituted with a trihalomethyl group
1) or an oxazole derivative represented by the general formula (PA
An S-triazine derivative represented by G2).

[0056]

[Chemical 20]

In the formula, R ²⁰¹ is a substituted or unsubstituted aryl group or alkenyl group, and R ²⁰² is a substituted or unsubstituted aryl group, alkenyl group, alkyl group or —C (Y) ₃
Indicate. Y represents a chlorine atom or a bromine atom. The following compounds can be specifically mentioned, but the compounds are not limited to these.

[0058]

[Chemical 21]

(2) An iodonium salt represented by the following general formula (PAG3) or a sulfonium salt represented by the following general formula (PAG4).

[0060]

[Chemical formula 22]

Here, the formulas Ar ¹ and Ar ² each independently represent a substituted or unsubstituted aryl group. R ²⁰³ , R ²⁰⁴ , R
²⁰⁵ is each independently a substituted or unsubstituted alkyl group,
Indicates an aryl group.

Z ⁻ represents a counter anion, for example, BF ₄ ⁻ ,
_{^{AsF 6 -, PF 6 -,}} SbF 6 -, SiF 6 2-, ClO 4 -,
Perfluoroalkane sulfonate anion such as CF ₃ SO ₃ ⁻ , alkyl sulfonate anion such as camphor sulfonate anion, aromatic sulfonate anion such as pentafluorobenzene sulfonate anion, benzene sulfonate anion and triisopropylbenzene sulfonate anion Examples thereof include condensed polynuclear aromatic sulfonate anions such as naphthalene-1-sulfonate anion, anthraquinone sulfonate anion, and sulfonate group-containing dyes, but are not limited thereto. Moreover, these anionic species may further have a substituent.

Two of R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ and Ar ¹ and Ar ² may be bonded to each other via a single bond or a substituent.

Specific examples include the compounds shown below, but the invention is not limited thereto.

[0065]

[Chemical formula 23]

[0066]

[Chemical formula 24]

[0067]

[Chemical 25]

[0068]

[Chemical formula 26]

[0069]

[Chemical 27]

[0070]

[Chemical 28]

[0071]

[Chemical 29]

The onium salts represented by the general formulas (PAG3) and (PAG4) are known, for example, JWKnapczyk.
et al, J. Am. Chem. Soc., 91, 145 (1969), AL Maycok
et al, J. Org. Chem., 35, 2532, (1970), E. Goethas et al,
Bull. Soc. Chem. Belg., 73,546, (1964), HMLei
cester, J. Ame. Chem. Soc., 51,3587 (1929), JV
Crivello et al, J. Polym. Chem. Ed., 18, 2677 (1980), U.S. Pat.Nos. 2,807,648 and 4,247,473, JP-A-53-
It can be synthesized by the method described in 101,331 or the like.

(3) A disulfone derivative represented by the following general formula (PAG5) or an iminosulfonate derivative represented by the general formula (PAG6).

[0074]

[Chemical 30]

In the formula, Ar³, Ar^FourReplace each independently
Or an unsubstituted aryl group. R ²⁰⁶Is replaced or
An unsubstituted alkyl group and an aryl group are shown. If A is replaced
Or unsubstituted alkylene group, alkenylene group, aryle
Group. Specific examples include the compounds shown below.
However, the present invention is not limited to these.

[0076]

[Chemical 31]

[0077]

[Chemical 32]

[0078]

[Chemical 33]

(4) A diazodisulfone derivative represented by the following general formula (PAG7).

[0080]

[Chemical 34]

Here, R represents a linear, branched or cyclic alkyl group or an optionally substituted aryl group. Specific examples thereof include the compounds shown below, but the invention is not limited thereto.

[0082]

[Chemical 35]

The compound (b) that generates an acid upon irradiation with actinic rays or radiation is preferably at least one of a compound having a sulfonium salt structure and a compound having a diazodisulfone structure, and more preferably a sulfonium salt. It is preferable to use both the compound having a structure and the compound having a diazodisulfone structure in combination.
Thereby, the effect of the present invention becomes more remarkable. The amount of these photo-acid generators added is usually in the range of 0.001 to 40% by weight, preferably 0.01 to 20% by weight, more preferably 0.1% by weight, based on the solid content in the composition. 1
Used in the range of up to 5% by weight. If the addition amount of the photo-acid generator is less than 0.001% by weight, the sensitivity will be low, and if the addition amount is more than 40% by weight, the light absorption of the resist will be too high, and the deterioration of the profile or the process (especially baking). ) It is not preferable because the margin becomes narrow.

(C) Compound Represented by General Formula (Q) In the general formula (Q), R ⁵ represents a monovalent organic group which may have a substituent. R ⁶ and R ^{7, which} may be the same or different, each represents a hydrogen atom or an alkyl group. X represents an alkylene group which may have a substituent. Y represents a divalent linking group. Z ² represents a heterocyclic group which may have a substituent. l represents 0 or 1.

Examples of the monovalent organic group which may have a substituent for R ^{5 in} the general formula (Q) include, for example, an alkyl group which may have a substituent, a cycloalkyl group, An aryl group, an aralkyl group or a heterocyclic group can be mentioned.

The alkyl group is preferably a linear or branched alkyl group having 1 to 15 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group and a sec- group. Examples thereof include a butyl group, a t-butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group and a nonyl group.

The cycloalkyl group has 3 to 1 carbon atoms.
A cycloalkyl group of 0 is preferable, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, and a cyclononyl group.

As the aryl group, an aryl group having 6 to 10 carbon atoms is preferable, for example, a phenyl group, a tolyl group,
Examples thereof include a methoxyphenyl group.

The aralkyl group is preferably an aralkyl group having a carbon number of 7 to 10, and examples thereof include a benzyl group and a methylbenzyl group.

The heterocyclic group has the same meaning as the heterocyclic group of Z ² described later.

Further, these monovalent organic groups may be bonded to each other via a linking group to form a monovalent organic group, and the linking group has the same meaning as the Y linking group described later and may be, for example, an ester. Group, carbonyl group, ether group, thioether group,
Examples thereof include thioester group and amide group.

Examples of the substituent which the monovalent organic group may have include, for example, an alkyl group (having 1 to 15 carbon atoms), a cycloalkyl group (having 3 to 10 carbon atoms) and an alkoxy group (having 1 to 1 carbon atoms). 5), an aryl group (having 6 to 10 carbon atoms), an alkylcarbonyloxy group (having 1 to 15 carbon atoms) which may further have a substituent, and a cycloalkylcarbonyloxy group which may further have a substituent. (C1-C15), a heterocyclic carbonyloxy group, etc. can be mentioned.

Specific examples of the monovalent organic group include phenyl group, p-tolyl group, o-methylphenyl group, 2,3,5.
-Trimethylphenyl group, 2,3,5-triisopropylphenyl group, butylphenyl group, octylphenyl group, dodecylphenyl group, methyl group, ethyl group, propyl group, butyl group, t-butyl group, cyclohexyl group, cyclohexylmethyl Group, cyclohexylethyl group, benzyl group, phenethyl group, methylbenzyl group, dimethylbenzyl group, methoxybenzyl group and the like, but are not limited thereto.

The alkyl group represented by R ⁶ and R ^{7 in} the general formula (Q) is preferably a linear or branched alkyl group having 1 to 4 carbon atoms such as methyl group, ethyl group and n-propyl group. Group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, t-butyl group and the like. As R ⁶ and R ⁷ , a hydrogen atom and a methyl group are more preferable.

The alkylene group represented by X in the general formula (Q) is preferably an alkylene group having 1 to 20 carbon atoms, more preferably 1 to 10 carbon atoms, and specific examples thereof include a methylene group, an ethylene group and a propylene group. , Butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, decanylene group and the like. Of these, ethylene, propylene group, butylene group and the like are preferable.

The alkylene group may be substituted, and examples of the substituent include a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group, a tolyl group and a cyclohexyl group.

The heterocycle of Z ² is thiirane,
Examples include cyclothiolane, thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole, thiazole, pyrrolidone, etc. Ring, or a ring formed by a hetero atom), without being limited thereto.

Further, as a further substituent for the heterocyclic group of Z ² , a hydroxyl group, a halogen atom (fluorine, chlorine, bromine,
Iodine, nitro group, cyano group, the above alkyl groups, methoxy group, ethoxy group, hydroxyethoxy group, propoxy group, hydroxypropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group, t-butoxy group, etc. Alkoxy group, alkoxycarbonyl group such as methoxycarbonyl group, ethoxycarbonyl group, aralkyl group such as benzyl group, phenethyl group, cumyl group, aralkyloxy group, formyl group, acetyl group, butyryl group, benzoyl group, cyanamyl group, valeryl group An acyl group such as butyryloxy group, an alkenyl group described above,
Examples thereof include alkenyloxy groups such as vinyloxy group, propenyloxy group, allyloxy group and butenyloxy group, the above aryl groups, aryloxy groups such as phenoxy group, and aryloxycarbonyl groups such as benzoyloxy group.

As the divalent linking group for Y, --OC (=
O) -, - O -, - S -, - SO 2 -, - SO -, - S
Examples thereof include e- and alkylene groups having 1 to 4 carbon atoms. These may be used alone or in combination of two or more.

As an example of the divalent linking group for Y, preferably -OC (= O)-, -O-, -S-, -SO.
_{2 -, - Se -, -} O-C (= O) -CH 2 - it is.

Preferred specific examples of the compound represented by formula (Q) are shown below, but the invention is not limited thereto.

[0102]

[Chemical 36]

[0103]

[Chemical 37]

[0104]

[Chemical 38]

[0105]

[Chemical Formula 39]

In the positive resist composition according to the present invention, the content of the compound represented by the general formula (Q) is 0.001 to 4 based on the solid content of the positive resist composition.
It is preferably 0% by weight, and 0.01 to 30% by weight
Is more preferable.

An organic basic compound can be used in the composition of the present invention. This is preferable because stability during storage is further improved and line width change due to PED is further reduced. The preferred organic basic compound that can be used in the present invention is a compound that is more basic than phenol. Of these, nitrogen-containing basic compounds are preferable. As a preferable chemical environment, the following formulas (A) to (E) can be mentioned.

[0108]

[Chemical 40]

More preferred compounds are nitrogen-containing cyclic compounds (also referred to as cyclic amine compounds) or nitrogen-containing basic compounds having two or more nitrogen atoms of different chemical environments in one molecule. The cyclic amine compound more preferably has a polycyclic structure. Specific preferred examples of the cyclic amine compound include compounds represented by the following general formula (F).

[0110]

[Chemical 41]

In formula (F), Y and Z each independently represent a linear, branched or cyclic alkylene group which may contain a hetero atom and may be substituted. Here, examples of the hetero atom include a nitrogen atom, a sulfur atom, and an oxygen atom. The alkylene group preferably has 2 to 10 carbon atoms, and more preferably has 2 to 5 carbon atoms. Examples of the substituent of the alkylene group include an alkyl group having 1 to 6 carbon atoms, an aryl group, an alkenyl group, a halogen atom, and a halogen-substituted alkyl group. Furthermore, specific examples of the compound represented by the general formula (F) include the compounds shown below.

[0112]

[Chemical 42]

Among the above, 1,8-diazabicyclo [5.4.0] undec-7-ene and 1,5-diazabicyclo [4.3.0] non-5-ene are particularly preferable.

The nitrogen-containing basic compound having two or more nitrogen atoms having different chemical environments in one molecule is particularly preferably a compound containing both a substituted or unsubstituted amino group and a ring structure containing a nitrogen atom. Alternatively, it is a compound having an alkylamino group. Preferred specific examples include substituted or unsubstituted guanidine, substituted or unsubstituted aminopyridine, substituted or unsubstituted aminoalkylpyridine, substituted or unsubstituted aminopyrrolidine, substituted or unsubstituted indazole, substituted or unsubstituted Pyrazole, substituted or unsubstituted pyrazine, substituted or unsubstituted pyrimidine, substituted or unsubstituted purine, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazoline, substituted or unsubstituted piperazine, substituted or unsubstituted amino Examples thereof include morpholine and substituted or unsubstituted aminoalkylmorpholine. Preferred substituents are amino group, aminoalkyl group, alkylamino group, aminoaryl group, arylamino group, alkyl group, alkoxy group, acyl group, acyloxy group, aryl group, aryloxy group, nitro group, hydroxyl group, cyano group. Is.

Particularly preferred compounds are guanidine,
1,1-dimethylguanidine, 1,1,3,3-tetramethylguanidine, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine , 2- (aminomethyl) pyridine, 2-amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6.
-Methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N- (2-aminoethyl) piperazine, N- (2-
Aminoethyl) piperidine, 4-amino-2,2,6,6
-Tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1- (2-aminoethyl)
Pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3-methyl-1-p-tolylpyrazole, pyrazine, 2- (aminomethyl) -5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine ,
4,6-dihydroxypyrimidine, 2-pyrazoline, 3
-Pyrazoline, N-aminomorpholine, N- (2-aminoethyl) morpholine, trimethylimidazole,
Examples thereof include triphenylimidazole and methyldiphenylimidazole, but are not limited thereto.

These nitrogen-containing basic compounds may be used alone or in combination of two or more. The amount of the nitrogen-containing basic compound used is usually 0.001 to 10 parts by weight, preferably 0.01 to 5 parts by weight, based on 100 parts by weight of the photosensitive resin composition (excluding the solvent). If it is less than 0.001 part by weight, the above effect cannot be obtained. On the other hand, if it exceeds 10 parts by weight, the sensitivity tends to decrease and the developability of the unexposed area tends to deteriorate.

The chemically amplified positive resist composition of the present invention may further contain, if necessary, a surfactant, a dye, a pigment, a plasticizer, a photosensitizer and a phenolic OH group for promoting solubility in a developing solution. A compound or the like having two or more can be contained.

The photosensitive resin composition of the present invention preferably contains a surfactant. Specifically, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, etc. Sorbitans such as polyoxyethylene alkyl allyl ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Fatty acid esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopal Te -
G, polyoxyethylene sorbitan monostearate,
Nonionic surfactants such as polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, and other polyoxyethylene sorbitan fatty acid esters, Ftop EF301, EF303, EF
352 (manufactured by Shin-Akita Kasei Co., Ltd.), Megafac F17
1, F173, F176, F189, R08 (manufactured by Dainippon Ink and Chemicals, Inc.), Fluoride FC430, FC431
(Sumitomo 3M Limited), Asahi Guard AG71
0, Surflon S-382, SC101, SC102,
Fluorine-based surfactants such as SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.), organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), acrylic acid-based or methacrylic acid-based (co) polymerization polyflow No. 75, no. 95 (manufactured by Kyoeisha Oil and Fat Chemical Co., Ltd.), Troisol S-366 (manufactured by Troy Chemical Co., Ltd.) and the like. Among these surfactants, fluorine-based or silicon-based surfactants are preferable from the viewpoint of coatability and reduction of development defects. The content of the surfactant is usually 0.01% by weight to 2% by weight, preferably 0.01% by weight to 1% by weight, based on the solid content of the entire composition in the composition of the present invention. These surfactants can be used alone or in combination of two or more.

Further, the following chemical sensitization type positive resist of the present invention is added by adding a spectral sensitizer as described below to sensitize the photoacid generator to be used in a wavelength region longer than far ultraviolet which does not have absorption. Can be made sensitive to the i or g line. Specific examples of suitable spectral sensitizers include benzophenone, p, p'-tetramethyldiaminobenzophenone, p, p'-tetraethylethylaminobenzophenone, 2-chlorothioxanthone, anthrone, 9-ethoxyanthracene, anthracene and pyrene. , Perylene,
Phenothiazine, benzyl, acridine orange, benzoflavin, cetoflavin-T, 9,10-diphenylanthracene, 9-fluorenone, acetophenone, phenanthrene, 2-nitrofluorene, 5-nitroacenaphthene, benzoquinone, 2-chloro-4-nitroaniline. , N-acetyl-p-nitroaniline, p-nitroaniline, N-acetyl-4-nitro-1-naphthylamine, picramide, anthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1,2-
Benzanthraquinone, 3-methyl-1,3-diaza-
1,9-benzanthrone, dibenzalacetone, 1,2
-Naphthoquinone, 3,3'-carbonyl-bis (5,7-
Dimethoxycarbonylcoumarin) and coronene, but not limited to these.

Examples of the compound having two or more phenolic OH groups for promoting the solubility in the developing solution include polyhydroxy compounds, and the polyhydroxy compounds are preferably phenols, resorcin, phloroglucin, phlorogluside, and 2, 3,4-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone, α, α ′, α ″ -tris (4-hydroxyphenyl) -1,3,5-triisopropylbenzene, tris ( There are 4-hydroxyphenyl) methane, tris (4-hydroxyphenyl) ethane and 1,1′-bis (4-hydroxyphenyl) cyclohexane.

The chemically amplified positive resist composition of the present invention is dissolved in a solvent which dissolves each of the above components and coated on a support. Solvents that can be used include ethylene dichloride, cyclohexanone and cyclohexanone. Pentanone, 2-heptanone, γ-butyrolactone, methyl ethyl ketone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, toluene, Ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate,
Propyl pyruvate, N, N-dimethylformamide,
Dimethyl sulfoxide, N-methylpyrrolidone, tetrahydrofuran and the like are preferable, and these solvents may be used alone or as a mixture.

The above chemically amplified positive resist composition is applied to a substrate (eg, silicon / silicon dioxide coating) used for the production of precision integrated circuit devices by a suitable coating method such as a spinner or coater, and then the predetermined composition is applied. A good resist pattern can be obtained by exposing through the mask of No. 1, baking, and developing.

Examples of the developer for the chemically amplified positive resist composition of the present invention include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium phosphate, sodium metasilicate, and aqueous ammonia. , Primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, dimethylethanolamine,
Alcohol amines such as triethanolamine, amides such as formamide and acetamide, tetramethylammonium hydroxide, trimethyl (2-hydroxyethyl) ammonium hydroxide, tetraethylammonium hydroxide, tributylmethylammonium hydroxide, tetraethanolammonium hydroxide , Methyltriethanol ammonium hydroxide,
Quaternary ammonium salts such as benzylmethyldiethanolammonium hydroxide, benzyldimethylethanolammonium hydroxide, benzyltriethanolammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, alkalis such as cyclic amines such as pyrrole and piperidine Aqueous solutions, etc.

[0124]

EXAMPLES The present invention will be described in more detail below with reference to examples, but the present invention is not limited thereto. (Synthesis Example) Synthesis Example-1 (Synthesis of Resin A'-1) VP15000 (1800 g) manufactured by Nippon Soda and propylene glycol monomethyl ether acetate (PGME)
A) (8200 g) was dissolved in the flask and vacuum distillation was performed to distill off water and PGMEA azeotropically. After confirming that the water content was sufficiently low, a solution prepared by adding pyridinium-p-toluenesulfonate (9.0 g) to cyclohexaneethanol (576.2 g) and dissolving was added to the reaction solution, and further t-butyl vinyl ether was added. (450.2
g) was added, and the mixture was stirred at room temperature for 5 hours. Pyridine (142.2 g) and acetic anhydride (153.2 g) were added thereto, and the mixture was stirred at room temperature for 2 hours. Water (3.6 liters) and ethyl acetate (7.2 liters) were added to the reaction solution and the layers were separated,
After further washing with water, ethyl acetate, water, and
The azeotropic component PGMEA was distilled off, and the alkali-soluble resin A′-1 (30% PGMEA) having a substituent according to the present invention was removed.
Solution) was obtained.

Synthesis Example-2 (Synthesis of Resin A'-2) p-acetoxystyrene monomer (or pt-butoxystyrene monomer) and 4-t-butylstyrene monomer were combined with dimethyl 2,2'-azobisisobutyrate (AIBN). )
Was used as an initiator and deprotected with hydrochloric acid or the like to obtain p-hydroxystyrene / pt-butylstyrene copolymer (93/7) R-1. R-1 (25g)
And propylene glycol monomethyl ether acetate (PGMEA) (120 g) were dissolved in a flask and vacuum distillation was performed to distill off water and PGMEA azeotropically. After confirming that the water content was sufficiently low, a solution prepared by adding pyridinium-p-toluenesulfonate (0.12 g) to cyclohexaneethanol (3.5 g) was added to the reaction solution, and t-butyl vinyl ether was further added. (3.4
g) was added, and the mixture was stirred at room temperature for 5 hours. Triethylamine (0.1 g) was added to the reaction solution to stop the reaction, water (50 ml) and ethyl acetate (100 ml) were added, the mixture was separated, washed with water, and then distilled under reduced pressure to remove ethyl acetate,
Water and the azeotrope PGMEA are distilled off, and the alkali-soluble resin A'-2 (30% PGM according to the present invention having a substituent).
EA solution) was obtained.

Synthesis Example-3 (Synthesis of Resin A'-3) VP15000 (1800 g) manufactured by Nippon Soda and propylene glycol monomethyl ether acetate (PGME)
A) (8200 g) was dissolved in the flask and vacuum distillation was performed to distill off water and PGMEA azeotropically. After confirming that the water content was sufficiently low, a solution prepared by adding pyridinium-p-toluenesulfonate (9.0 g) to cyclohexaneethanol (576.2 g) and dissolving was added to the reaction solution, and further t-butyl vinyl ether was added. (450.2
g) was added, and the mixture was stirred at room temperature for 5 hours. Water (3.6 liters) and ethyl acetate (7.2 liters) were added to the reaction solution, the layers were separated, washed with water, and then distilled under reduced pressure to remove ethyl acetate, water, and azeotrope PGMEA. Alkali-soluble resin A′-3 (3 having a substituent according to the present invention
0% PGMEA solution) was obtained.

Synthesis Example-4 (Synthesis of Resin B'-4) VP15000 (100 g) manufactured by Nippon Soda and propylene glycol monomethyl ether acetate (PGMEA)
(400 g) was dissolved in a flask and vacuum distillation was performed,
Water and PGMEA were distilled off azeotropically. After confirming that the water content was sufficiently low, ethyl vinyl ether (25.0
g) and p-toluenesulfonic acid (0.02 g) were added,
The mixture was stirred at room temperature for 1 hour. Triethylamine (0.03 g) was added to the reaction solution to stop the reaction, and water (400 m
l) and ethyl acetate (800 ml) were added, the mixture was separated, washed with water, and then distilled under reduced pressure to distill off ethyl acetate, water and azeotrope PGMEA to give an alkali-soluble resin having a substituent according to the present invention. B'-4 (30% PGMEA solution) was obtained.

Synthesis Example-5 (Synthesis of Resin B'-5) p-acetoxystyrene monomer (or p-t-butoxystyrene monomer) and cyclohexyl acrylate monomer were combined with dimethyl 2,2'-azobisisobutyrate (AIB).
N) was used as an initiator and polymerized, and then deprotected with hydrochloric acid or the like to obtain p-hydroxystyrene / cyclohexyl acrylate copolymer (90/10) R-2. Resin R-
2 (100 g) and propylene glycol monomethyl ether acetate (PGMEA) (400 g) were dissolved in a flask and vacuum distillation was performed to distill off water and PGMEA azeotropically. After confirming that the water content was sufficiently low, ethyl vinyl ether (25.0 g) and p-toluenesulfonic acid (0.02 g) were added, and the mixture was stirred at room temperature for 1 hr.
Triethylamine (0.03 g) was added to the reaction solution to stop the reaction, and water (400 ml) and ethyl acetate (800 m) were added.
l) was added, liquid separation was carried out, and further after washing with water, ethyl acetate, water, and azeotrope PGMEA were distilled off by distillation under reduced pressure to obtain an alkali-soluble resin B'- having a substituent group according to the present invention.
5 (30% PGMEA solution) was obtained.

Examples 1 to 24 and Comparative Examples 1 to 3 PGM was added to each component shown in Tables 1 and 2 at a compounding ratio (addition amount) shown in Tables 1 and 2 so that the concentration was 12% by weight.
It was dissolved in a mixed solvent of EA (propylene glycol monomethyl ether acetate) / PGME (propylene glycol monomethyl ether) (= 8/2 weight ratio),
Filtered through a 1 μm microfilter, Examples 1-24,
The positive resist solutions of Comparative Examples 1 to 3 were prepared. (Evaluation method of line width fluctuation rate) The obtained positive resist solution was applied onto a bare silicon substrate using a spin coater (Mark8 manufactured by Tokyo Electron Ltd.), dried at 90 ° C. for 90 seconds, and then about 0.495 μm. And a resist film of about 0.530 μm were formed. Then, a KrF excimer laser (wavelength 248 nm, NA = 0.60, σ = 0.75)
Of Canon Inc. FPA-3000EX5).
After exposure, heat treatment is performed at 110 ° C. for 90 seconds to 2.38.
% TMAH (tetramethylammonium hydroxide) aqueous solution, followed by rinse with pure water and spin drying to obtain a resist pattern. At this time, the resist pattern transferred onto the substrate by the above process is 0.
The line width of 25 μm and the space width consist of five lines having a periodicity of 1: 1. First, the optimum exposure amount for reproducing the above 0.25 μm line (CD ₀ ) on a substrate having a resist film thickness of about 0.495 μm was determined by Hitachi CD-SEM.
(S-9220), and then the resist film thickness at the same optimum exposure amount obtained here is about 0.530 μm.
The line width of 0.25 μm transferred onto the substrate is also S-
Determined by 9220 (CD ₁ ). The line width variation rate was defined by the following formula based on the above measured values. Line width variation rate = (CD ₀ −CD ₁ ) / CD ₀ × 100% These results are shown in Table 3.

[0130]

[Table 1]

[0131]

[Table 2]

[0132]

[Table 3]

As the organic basic compound, (E-
5) and (E-6) were used.

[0134]

[Chemical 43]

[0135]

[Chemical 44]

As shown in Table 3, it can be seen that the composition of the present invention significantly suppressed the line width variation rate as compared with the comparative example.

[0137]

According to the present invention, there is provided a positive resist composition in which the line width variation rate due to the variation in resist film thickness on a highly reflective substrate (bare silicon substrate, polysilicon substrate, etc.) having irregularities is remarkably suppressed. can do.

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H025 AA02 AA03 AB16 AC04 AC08                       AD03 BE00 BE07 BE10 BG00                       CB08 CB17 CB41 CC20 FA17                 4J100 AB07P AL08Q BA02H BA10P                       BC04Q BC43H CA04 FA03                       HC17 HE41 JA38

Claims (3)

[Claims] 1. (a) A resin (A) having a structural unit containing a group represented by the following general formula (X), which is decomposed by the action of an acid to increase the solubility in an alkaline developer and / or
Or, a resin (B) having a structural unit containing a group represented by the following general formula (Y), which is decomposed by the action of an acid to increase the solubility in an alkali developing solution, (b) irradiation with actinic rays or radiation. And a compound (c) represented by the following general formula (Q). [Chemical 1] In formula (X), R ¹ and R ^{2, which} may be the same or different, each represents a hydrogen atom or an alkyl group which may have a substituent. m represents an integer of 1 to 20. [Chemical 2] In the above formula, R ³ represents an alkyl group, an aryl group or an aralkyl group which may have a substituent. n is 0
Represents an integer of ~ 5. [Chemical 3] In formula (Y), R ⁴ represents an alkyl group. [Chemical 4] In formula (Q), R ⁵ represents a monovalent organic group which may have a substituent. R ⁶ and R ^{7, which} may be the same or different, each represents a hydrogen atom or an alkyl group. X represents an alkylene group which may have a substituent. Y represents a divalent linking group. Z ² represents a heterocyclic group which may have a substituent. l represents 0 or 1. 2. The positive product according to claim 1, wherein the compound (b) which generates an acid upon irradiation with actinic rays or radiation is a compound having a sulfonium salt structure or a compound having a diazodisulfone structure. Type resist composition. 3. The positive according to claim 1, wherein the compound (b) that generates an acid upon irradiation with actinic rays or radiation is a compound having a sulfonium salt structure or a compound having a diazodisulfone structure. Type resist composition.