JP2003139523A - Surface defect detecting method and surface defect detecting device - Google Patents

Surface defect detecting method and surface defect detecting device

Info

Publication number
JP2003139523A
JP2003139523A JP2001374982A JP2001374982A JP2003139523A JP 2003139523 A JP2003139523 A JP 2003139523A JP 2001374982 A JP2001374982 A JP 2001374982A JP 2001374982 A JP2001374982 A JP 2001374982A JP 2003139523 A JP2003139523 A JP 2003139523A
Authority
JP
Japan
Prior art keywords
inspection object
light source
mirror
image pickup
sensor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001374982A
Other languages
Japanese (ja)
Other versions
JP3709426B2 (en
Inventor
Yoichiro Oyama
洋一郎 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electro Sensory Devices Corp
Original Assignee
Nippon Electro Sensory Devices Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electro Sensory Devices Corp filed Critical Nippon Electro Sensory Devices Corp
Priority to JP2001374982A priority Critical patent/JP3709426B2/en
Publication of JP2003139523A publication Critical patent/JP2003139523A/en
Application granted granted Critical
Publication of JP3709426B2 publication Critical patent/JP3709426B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To detect a microscopic irregular defect on the face of an inspection object comprising a three dimensional face or faces with a plurality of different properties such as an edge part of a silicon wafer or the like. SOLUTION: A mirror like surface of the inspection object is illuminated by a diffused light source, an image of the mirror-finished surface of the inspection object is picked up by a plurality of image pickup means composed of a telecentric optical system and a linear sensor array, and the microscopic irregular defect of the mirror-finished inspection object surface is detected from the intensity of signals outputted from the linear sensor array. Microscopic irregularity of all inspection object faces can be positively detected even in an image pickup object of a three dimensional shape, and it can be used to detect a microscopic irregular defect of a three dimensional face or an amorphous face such as the edge part of the silicon wafer or the like.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】半導体用のシリコンウエハの
エッジ部の微少凹凸状の欠陥およびその他の鏡面板の上
にある微少凹凸状の欠陥を検出することができる表面欠
陥検出方法および表面欠陥検出装置に関する。
TECHNICAL FIELD The present invention relates to a surface defect detecting method and a surface defect detecting device capable of detecting minute unevenness defects at the edge portion of a silicon wafer for semiconductors and other minute unevenness defects on a mirror plate. Regarding

【0002】[0002]

【従来の技術】半導体の形成に用いるシリコンウエハの
エッジ部の検査は、鏡面部の検査と比べてこれまで重視
されてこなかった。ところが、半導体用のシリコンウエ
ハのエッジ部に、打痕、クラック、微少突起およびパー
ティクルの付着などの欠陥があると、この欠陥が原因で
シリコンウエハに致命的な不具合が発生することがあ
る。
2. Description of the Related Art The inspection of the edge portion of a silicon wafer used for forming a semiconductor has not been considered as important as the inspection of the mirror surface portion. However, if there are defects such as dents, cracks, minute projections, and adhesion of particles on the edge portion of the silicon wafer for semiconductors, fatal defects may occur in the silicon wafer due to these defects.

【0003】シリコンウエハのエッジ部に打痕、クラッ
ク等がある場合では、熱処理工程などの工程でシリコン
ウエハに熱が加えられると、これらの欠陥が原因となっ
てシリコンウエハの鏡面部すなわち半導体回路が形成さ
れる面にクラックが発生して不良品となるおそれがあ
る。
When there are dents, cracks, etc. at the edge of the silicon wafer, when heat is applied to the silicon wafer in the heat treatment step, etc., these defects cause the mirror surface portion of the silicon wafer, that is, the semiconductor circuit. There is a possibility that cracks may occur on the surface on which the cracks are formed, resulting in a defective product.

【0004】一方、シリコンウエハのエッジ部にパーテ
ィクルが付着している場合では、工程が進むにつれてこ
のパーティクルが鏡面部に転位して付着するおそれがあ
る。あるいは、打痕、クラック部の一部が剥離し鏡面部
に付着するおそれがある。
On the other hand, if particles adhere to the edge of the silicon wafer, there is a risk that the particles will dislocate and adhere to the mirror surface as the process proceeds. Alternatively, there is a possibility that part of the dents and cracks may peel off and adhere to the mirror surface.

【0005】近年、LSIの集積度が高くなり、ファイ
ンピッチ化の要求が高まるにつれてシリコンウエハの鏡
面部にこのような微少なパーティクルが付着したり、鏡
面にクラックが発生したシリコンウエハを次に工程に供
給するのを完全に排除しなければならず、そのためには
半導体用のシリコンウエハのエッジ部に打痕、クラッ
ク、パーティクルの付着などの欠陥の有無を厳密に検査
する必要がある。
In recent years, as the degree of integration of LSIs has increased and the demand for finer pitches has increased, such minute particles have adhered to the mirror surface portion of the silicon wafer, or a silicon wafer having a crack on the mirror surface is processed next. Must be completely eliminated, and for that purpose, it is necessary to strictly inspect the edge portion of the semiconductor silicon wafer for defects such as dents, cracks, and adhesion of particles.

【0006】半導体用のシリコンウエハのエッジ部以外
の鏡面の微少凹凸欠陥検査には、鏡面仕上げされている
表面に平行光線を当てて、コリメートレンズにより反射
輝度の濃淡を発生させることにより、表面の微少凹凸の
検査を行うことができる。
For the inspection of microscopic unevenness defects on a mirror surface other than the edge portion of a silicon wafer for semiconductors, parallel rays are applied to the mirror-finished surface, and a collimating lens is used to generate a gradation of reflected brightness, whereby It is possible to inspect minute irregularities.

【0007】しかし、この検査方法をシリコンウエハの
エッジ部の表面の微少凹凸の検査に用いることはできな
い。なぜなら、シリコンウエハのエッジ部は、幾つかの
平面部とR部分からなるために、一定方向の平行光では
一つの面のみが検出可能であり、他の平面部およびR部
の欠陥の有無を判別することができる画像を撮像するこ
とができない。
However, this inspection method cannot be used for the inspection of minute irregularities on the surface of the edge portion of a silicon wafer. Because the edge portion of the silicon wafer is composed of several flat portions and R portions, only one surface can be detected by parallel light in a certain direction, and the presence or absence of defects in other flat portions and R portions can be detected. An image that can be discriminated cannot be captured.

【0008】そこでシリコンウエハなどの面取りあるい
はテーパを有するエッジ部の検査について幾つかの提案
がなされている。
Therefore, some proposals have been made for the inspection of chamfered edges or tapered edge portions of silicon wafers.

【0009】特許2999712号ではレーザーの回折
現象を利用して凹凸欠陥を検出する方法が開示されてい
るが、この方法では微細クラックや微少突起の欠陥を検
出することが困難であり、さらに汚れに過剰に検出する
という不具合がある。
[0009] Japanese Patent No. 2999712 discloses a method of detecting uneven defects by utilizing the diffraction phenomenon of laser, but it is difficult to detect defects such as fine cracks and minute protrusions by this method, and further, it becomes dirty. There is a problem of excessive detection.

【0010】また特開平2000.4653 7号公報
にはエッジ面の欠陥内部に焦点を合わせて欠陥と研摩く
ずなどと区別して欠陥の検出を行う方法が提案されてい
るが、被写界深度を浅くすることが必要であり、ウエハ
の偏心や撮像装置のアライメント誤差などにより微細ク
ラックや微少突起の検出が困難である。
Further, Japanese Laid-Open Patent Publication No. 2004.6537 proposes a method for detecting a defect by focusing on the inside of the defect on the edge surface and distinguishing the defect from the polishing waste and the like. It is necessary to make it shallow, and it is difficult to detect fine cracks and minute protrusions due to eccentricity of the wafer, alignment error of the image pickup device, and the like.

【0011】[0011]

【発明が解決しようとする課題】上術したように、半導
体用のシリコンウエハのエッジ部以外の鏡面の凹凸欠陥
検査に用いられている検査方法では、ほぼ平坦な面以外
の表面の凹凸状欠陥の検査に用いることができない。
As described above, in the inspection method used for the inspection of the irregularities on the mirror surface other than the edge portion of the silicon wafer for semiconductor, the irregularities on the surface other than the substantially flat surface are used. Cannot be used for inspection.

【0012】また今まで提案されているエッジ部の欠陥
を検出する方法は、上記の説明から明らかなように微少
クラックおよび微少突起を検出するのに適切な方法とは
いえず、また、表面の汚れを欠陥と過って認識するおそ
れがある。
Further, the methods for detecting defects in the edge portion which have been proposed so far cannot be said to be suitable methods for detecting minute cracks and minute protrusions, as is apparent from the above description, and the surface You may mistakenly recognize stains as defects.

【0013】上記問題を鑑み、本発明は、シリコンウエ
ハなどのエッジ部のように立体的な面あるいは不定形の
面の微少凹凸状欠陥を検出することを可能にするととも
に、検査対象面の汚れなどを過って欠陥と認識すること
を無くすることで検査精度を向上させ、さらに検査のス
ループットを高く設定することができる表面欠陥検査方
法およびその検査装置を提供することを目的とする。
In view of the above problems, the present invention makes it possible to detect minute unevenness-like defects on a three-dimensional surface or an irregular surface such as an edge portion of a silicon wafer, and at the same time, stain the surface to be inspected. It is an object of the present invention to provide a surface defect inspection method and an inspection apparatus therefor capable of improving inspection accuracy by eliminating false recognition as a defect and further setting inspection throughput high.

【0014】[0014]

【課題を解決するための手段】第1の発明は、移動する
検査対象物の鏡面状表面の微少凹凸欠陥を検出する表面
欠陥検出方法であって、拡散光光源によって検査対象物
の鏡面状表面を照明し、検査対象物の鏡面状表面の画像
をテレセントリック光学系とリニアセンサアレイで構成
された複数の撮像手段により撮像し、このリニアセンサ
アレイから出力される信号の明暗度から鏡面状検査対象
物表面の微少凹凸欠陥を検出することを特徴とする。
A first aspect of the present invention is a surface defect detection method for detecting microscopic unevenness defects on a mirror-like surface of a moving inspection object, which is a mirror-like surface of the inspection object by a diffused light source. The image of the specular surface of the inspection object is imaged by a plurality of imaging means composed of a telecentric optical system and a linear sensor array, and the specular inspection object is determined from the brightness of the signal output from the linear sensor array. It is characterized by detecting minute unevenness defects on the surface of the object.

【0015】第2の発明は、第1の発明の表面欠陥検出
方法において、前記拡散光光源は近赤外線光源であるこ
とを特徴とする。
A second invention is characterized in that, in the surface defect detecting method of the first invention, the diffused light source is a near infrared light source.

【0016】第3の発明は、第1の発明の表面欠陥検出
方法において、前記撮像手段は近赤外線フイルターを備
え、リニアセンサアレイは近赤外線光のみ受光すること
を特徴とする。
A third invention is characterized in that, in the surface defect detecting method of the first invention, the image pickup means includes a near-infrared filter, and the linear sensor array receives only near-infrared light.

【0017】第4の発明は、移動する検査対象物の鏡面
状表面の微少凹凸欠陥を検出する表面欠陥検出装置であ
って、検査対象物の鏡面状表面を拡散光によって照明す
る拡散光光源と、検査対象物の鏡面状表面の画像を撮像
するテレセントリック光学系とリニアセンサアレイで構
成された複数の撮像手段と、このリニアセンサアレイか
ら出力される信号の明暗度から鏡面状検査対象物表面の
微少凹凸欠陥を検出する画像処理手段とを備えることを
特徴とする。
A fourth aspect of the present invention is a surface defect detection apparatus for detecting microscopic unevenness defects on a mirror-like surface of a moving inspection object, and a diffused light source for illuminating the mirror-like surface of the inspection object with diffused light. , A plurality of image pickup means composed of a telecentric optical system and a linear sensor array for picking up an image of the specular surface of the inspection object, and the intensity of the signal output from the linear sensor array An image processing unit for detecting a minute unevenness defect is provided.

【0018】第5の発明は、第4の発明の表面欠陥検出
装置において、前記拡散光光源は近赤外線光源であるこ
とを特徴とする。
A fifth invention is characterized in that, in the surface defect detecting device of the fourth invention, the diffused light source is a near infrared light source.

【0019】第6の発明は、第4の発明の表面欠陥検出
装置において、前記撮像手段は近赤外線フイルターを備
え、リニアセンサアレイは近赤外線光のみ受光すること
を特徴とする。
A sixth invention is characterized in that, in the surface defect detecting apparatus of the fourth invention, the image pickup means includes a near infrared ray filter, and the linear sensor array receives only near infrared ray.

【0020】第7の発明は、第4の発明の表面欠陥検出
装置において、前記検査対象物は、円板のエッジ部であ
り、前記拡散光光源は光源部が円弧状または楕円弧状ま
たは門型であり、検査対象物の面取り部および側面部を
撮像する複数の前記撮像手段を備えることを特徴とす
る。
A seventh invention is the surface defect detecting apparatus according to the fourth invention, wherein the inspection object is an edge portion of a disk, and the diffused light source has a light source portion in an arc shape, an elliptic arc shape or a gate shape. It is characterized by comprising a plurality of the imaging means for imaging the chamfered portion and the side surface portion of the inspection object.

【0021】[0021]

【作用】本発明の表面欠陥検査装置は、拡散光光源によ
って検査対象物の鏡面状表面を照明するので、複数の平
面から構成される立体的な形状の検査対象物であっても
撮像可能に照明することができるとともに、検査対象物
の鏡面状表面の画像をテレセントリック光学系とリニア
センサアレイで構成された複数の撮像手段により撮像す
る結果、鏡面状検査対象物表面の微少凹凸状欠陥をリニ
アセンサアレイから出力される信号の明暗度として検出
することを可能にしている。
Since the surface defect inspection apparatus of the present invention illuminates the specular surface of the inspection object by the diffused light source, it is possible to image even the inspection object having a three-dimensional shape composed of a plurality of planes. In addition to being able to illuminate, the image of the specular surface of the inspection object is picked up by a plurality of image pickup means composed of a telecentric optical system and a linear sensor array. It is possible to detect the intensity of the signal output from the sensor array.

【0022】また、拡散光光源を近赤外線光源とし、撮
像手段に近赤外線フイルターを用いるなどの手段を用い
ることにより検査表面の濃度および汚れの影響を軽減す
ることができる。
Further, by using a near-infrared light source as the diffused light source and using a near-infrared filter as the image pickup means, it is possible to reduce the influence of density and dirt on the inspection surface.

【0023】さらに、前記拡散光光源の形状を円弧状ま
たは楕円弧状または門型にすることにより円板のエッジ
部分のテーパ部および端面を同時に照明することにより
立体的な形状の表面にある微少凹凸状欠陥を検出するこ
とができる。
Further, by making the shape of the diffused light source into an arc shape, an elliptic arc shape, or a gate shape, the tapered portion and the end surface of the edge portion of the disk are illuminated at the same time, so that minute irregularities on the surface of the three-dimensional shape are formed. State defects can be detected.

【0024】[0024]

【発明の実施の形態】図をもって本発明の表面欠陥検査
装置および検査方法について詳細に説明する。なお、本
発明は本実施例によって限定されるものではない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The surface defect inspection apparatus and inspection method of the present invention will be described in detail with reference to the drawings. The present invention is not limited to this embodiment.

【0025】図1は本発明による表面欠陥検査装置1を
側面図でもって示すものであり、図2は表面欠陥検査装
置1の平面図である。図1および図2でもって示す表面
欠陥装置1は半導体製造用のシリコンウエハ6のエッジ
部を検査対象物とする場合の実施例を示すものであり、
撮像手段として上面用撮像手段2、側面用撮像手段3お
よび下面用撮像手段4を備える。また、照明手段として
C型光源5を用いている。
FIG. 1 is a side view showing a surface defect inspection apparatus 1 according to the present invention, and FIG. 2 is a plan view of the surface defect inspection apparatus 1. The surface defect apparatus 1 shown in FIGS. 1 and 2 shows an embodiment in which an edge portion of a silicon wafer 6 for semiconductor production is used as an inspection object.
As the image pickup means, an upper surface image pickup means 2, a side surface image pickup means 3, and a lower surface image pickup means 4 are provided. Further, the C-type light source 5 is used as the illumination means.

【0026】シリコンウエハ6のエッジ部は図3に示す
ように、2つのテーパ部、上側テーパ面61と下側テー
パ面63および側面62とからなる。それぞれの面と他
の面との交叉部はR面で滑らかに繋がれている。
As shown in FIG. 3, the edge portion of the silicon wafer 6 is composed of two tapered portions, an upper tapered surface 61, a lower tapered surface 63 and a side surface 62. The intersection of each surface and the other surface is smoothly connected by the R surface.

【0027】C型光源5は、図1に示すように発光部が
帯状でかつ円弧状あるいは楕円弧状に形成されている拡
散光光源であり、シリコンウエハ6のエッジ部を上下お
よび側面方向から拡散光でもって照明する。
As shown in FIG. 1, the C-type light source 5 is a diffused light source in which the light emitting portion is formed in a strip shape and in an arc shape or an elliptic arc shape, and diffuses the edge portion of the silicon wafer 6 from the vertical and side surfaces. Illuminate with light.

【0028】図2に示すように、C型光源5はシリコン
ウエハ6の半径方向から僅かに傾けた姿勢で配置され、
側面用撮像手段3はシリコンウエハ6の半径方向から反
対側に傾けた姿勢で配置されることで、C型光源5から
出た光の正反射光を最も効率よく受ける構成としてい
る。
As shown in FIG. 2, the C-type light source 5 is arranged in a posture slightly tilted from the radial direction of the silicon wafer 6,
The side surface image pickup means 3 is arranged so as to be tilted to the opposite side from the radial direction of the silicon wafer 6 so as to most efficiently receive the specular reflection light of the light emitted from the C-type light source 5.

【0029】一方、上面用撮像手段2および下面用撮像
手段4は、図1に示すように、それぞれ、シリコンウエ
ハ6のエッジ部の上側テーパ面61と下側テーパ面63
にほぼ正対するように配置され、側面用撮像手段3と同
様に、C型光源5から出た光の正反射光を最も効率よく
受ける位置に配置される。
On the other hand, the upper surface image pickup means 2 and the lower surface image pickup means 4 respectively have an upper taper surface 61 and a lower taper surface 63 at the edge portion of the silicon wafer 6, as shown in FIG.
Are arranged so as to face each other substantially, and like the side-face image pickup means 3, are arranged at a position that most efficiently receives the specularly reflected light of the light emitted from the C-type light source 5.

【0030】シリコンウエハ6は、円形の形状をしてお
り、図示しない回転テーブルに載置されて一定速度で回
転する。上面用撮像手段2、側面用撮像手段3および下
面用撮像手段4のラインセンサアレイは、シリコンウエ
ハ6のエッジ部の画像を連続的にスキャンし、その出力
を画像処理装置7に送って欠陥の検出を行う。
The silicon wafer 6 has a circular shape, is placed on a rotary table (not shown), and rotates at a constant speed. The line sensor arrays of the upper surface image pickup means 2, the side surface image pickup means 3, and the lower surface image pickup means 4 continuously scan the image of the edge portion of the silicon wafer 6, and send the output to the image processing device 7 to detect defects. Detect.

【0031】図4は、上面用撮像手段2、側面用撮像手
段3および下面用撮像手段4に適用されているテレセン
トリック光学系を説明する説明図である。
FIG. 4 is an explanatory view for explaining a telecentric optical system applied to the upper surface image pickup means 2, the side surface image pickup means 3 and the lower surface image pickup means 4.

【0032】像側レンズ81とリニアセンサ側レンズ8
3との間に絞り82が配置されており、その位置は、像
側レンズ81の後側焦点であって、かつリニアセンサ側
レンズ83の前側焦点である位置に置かれる。このよう
に構成されている光学系では、主光線は像側レンズ81
の光軸に平行な光線となり、さらにリニアセンサ側レン
ズ83を通過した主光線はリニアセンサ側レンズ83の
光軸に平行になる。すなわち、リニアセンサアレイ84
には、テレセントリック光学系の光軸に平行な光線のみ
入射することになる。
Image side lens 81 and linear sensor side lens 8
A diaphragm 82 is disposed between the diaphragm 82 and the third lens 3, and the position thereof is located at the rear focal point of the image side lens 81 and the front focal point of the linear sensor side lens 83. In the optical system configured as described above, the chief ray is the image-side lens 81.
Becomes a light ray parallel to the optical axis of the linear sensor side lens 83, and the principal ray passing through the linear sensor side lens 83 becomes parallel to the optical axis of the linear sensor side lens 83. That is, the linear sensor array 84
Will enter only the light rays parallel to the optical axis of the telecentric optical system.

【0033】リニアセンサアレイ84は、CCD電荷素
子を一列に配置した高い解像度を得られ受光素子であ
り、検査対象物の移動方向と直交する方向に配置してス
キャンを行うことで、2次元画像を得る撮像素子であっ
て、回転運動するシリコンウエハ6のエッジ部の表面を
連続的に撮像する。
The linear sensor array 84 is a light receiving element in which CCD charge elements are arranged in a row to obtain a high resolution, and the linear sensor array 84 is arranged in a direction orthogonal to the moving direction of the inspection object to perform scanning to thereby obtain a two-dimensional image. The image pickup device for obtaining the image of the surface of the edge portion of the rotating silicon wafer 6 is continuously imaged.

【0034】次に本実施例の表面欠陥検査装置の機能と
検査手順について説明する。図示しない回転テーブルに
載置されたシリコンウエハ6はその中心軸を回転中心に
して一定速度で回転している。この間に上面用撮像手段
2、側面用撮像手段3および下面用撮像手段4に備えら
れているラインセンサアレイ74がそれぞれ上側テーパ
面61、側面62および下側テーパ面63の画像を連続
的に撮像する。
Next, the function and inspection procedure of the surface defect inspection apparatus of this embodiment will be described. The silicon wafer 6 placed on a turntable (not shown) is rotating at a constant speed with its central axis as the center of rotation. In the meantime, the line sensor array 74 provided in the upper surface image pickup means 2, the side surface image pickup means 3, and the lower surface image pickup means 4 continuously picks up images of the upper tapered surface 61, the side surface 62, and the lower tapered surface 63, respectively. To do.

【0035】本発明の表面欠陥検査装置に用いる撮像手
段はテレセントリック光学系撮像手段であるために、撮
像手段の光学系の光軸に平行な光線のみ撮像素子のリニ
アセンサアレイ84に入射する。したがって、図5に示
すように、撮像している面に微少凹凸がある箇所では光
が散乱する結果、撮像手段に入射する光軸に平行は光線
が減少し、平坦である箇所とは明暗の差が生じる。本発
明の微少凹凸欠陥検査装置ではこの性質を利用して検査
面の微少凹凸を明暗度の違いとして検出する。
Since the image pickup means used in the surface defect inspection apparatus of the present invention is a telecentric optical system image pickup means, only light rays parallel to the optical axis of the optical system of the image pickup means are incident on the linear sensor array 84 of the image pickup element. Therefore, as shown in FIG. 5, light is scattered at a place where the imaged surface has minute irregularities, and as a result, light rays are reduced in a direction parallel to the optical axis incident on the imaging means, and a flat place is bright and dark. There is a difference. The fine unevenness defect inspection apparatus of the present invention utilizes this property to detect the fine unevenness of the inspection surface as a difference in brightness.

【0036】本発明の欠陥検査装置に用いる光源は拡散
光照明であり、さらに光源が円弧状の形状をしているた
めに、上側テーパ面61、側面62および下側テーパ面
63の全面にわたって多方向から照明することになり、
そのうち正反射光が撮像手段の光軸と平行になるものが
ラインセンサアレイ74に入射する。
The light source used in the defect inspection apparatus of the present invention is diffuse light illumination, and since the light source has an arcuate shape, the upper tapered surface 61, the side surface 62, and the lower tapered surface 63 all over the entire surface. I will illuminate from the direction,
Among them, the light whose specular reflection light is parallel to the optical axis of the image pickup means enters the line sensor array 74.

【0037】従来のように平行光線で照明すると、図3
に示すR部においては反射光が散乱して暗い画像となる
結果、表面の欠陥を検出することができない。一方本発
明のように光源を拡散光光源とすることによりR部にお
ける反射光で撮像手段に入射する光が存在するために明
るい画像が得られ、欠陥の有無を検出することが可能と
なる。
When illuminated with parallel rays as in the conventional case, FIG.
In the R portion shown in (1), the reflected light is scattered to form a dark image, so that the surface defect cannot be detected. On the other hand, by using a diffused light source as the light source as in the present invention, a bright image can be obtained because there is light reflected by the R portion and incident on the imaging means, and it is possible to detect the presence or absence of a defect.

【0038】このように、立体的な形状の撮像対象であ
っても、拡散光光源で照明し、テレセントリック光学系
の撮像手段により撮像することにより、すべての検査対
象面の微少凹凸を確実に検出することができる。
As described above, even if an image pickup object having a three-dimensional shape is illuminated by the diffused light source and the image is picked up by the image pickup means of the telecentric optical system, the fine irregularities on all the inspection object surfaces are surely detected. can do.

【0039】また、本実施例の表面欠陥装置では、撮像
素子にリニアセンサアレイを用いているために、2次元
のエリアセンサと比較して高い解像度を得ることが可能
となり、微細な凹凸状欠陥の検出を行うことができる。
また、リニアセンサアレイのスキャン速度はエリアセン
サと比較して格段と速いので、高いスループットを保証
し、検査処理能力が高い。
Further, in the surface defect device of the present embodiment, since the linear sensor array is used as the image pickup element, it is possible to obtain a higher resolution as compared with the two-dimensional area sensor, and it is possible to obtain a fine uneven defect. Can be detected.
Further, since the scanning speed of the linear sensor array is remarkably faster than that of the area sensor, high throughput is guaranteed and inspection processing capability is high.

【0040】さらに、光源として近赤外線光を用いる
か、あるいは撮像手段に近赤外線光のみ通すフィルター
を用いることで、汚れの影響を受けにくい検査装置を構
成することが可能となる。
Furthermore, by using near infrared light as the light source or by using a filter that allows only the near infrared light to pass through the image pickup means, it is possible to construct an inspection device that is not easily affected by dirt.

【0041】本実施例では、シリコンウエハのエッジに
存在する微少凹凸状の欠陥を検出する表面欠陥検出装置
として説明したが、これに限るものではなく性状の異な
る複数の面を持つ形状の検査対象物に存在する微少凹凸
状の欠陥を検査することができる。
In the present embodiment, the surface defect detecting apparatus for detecting the minute irregularity-shaped defects existing on the edge of the silicon wafer has been described. However, the present invention is not limited to this, and the inspection object having a shape having a plurality of surfaces having different properties. It is possible to inspect micro unevenness defects existing in an object.

【0042】例えば、図6に示すように段差のある検査
対象面91A、91B、91Cを有する検査対象物であ
っても、拡散光照明93でもってこれらの検査対象面9
3を照明し、撮像手段92A、92B、92Cで撮像す
ることにより、検査対象面に存在する微少凹凸状の欠陥
を明暗度の違いにより検出することが可能である。
For example, even if an inspection object has inspection surfaces 91A, 91B and 91C with steps as shown in FIG.
By illuminating 3 and imaging with the imaging means 92A, 92B, and 92C, it is possible to detect the minute unevenness-like defects present on the surface to be inspected due to the difference in brightness.

【0043】[0043]

【発明の効果】本発明の表面欠陥検出方法および表面欠
陥検出装置は、拡散光光源で照明し、テレセントリック
光学系の撮像手段により撮像することにより、立体的な
形状の撮像対象であってもすべての検査対象面の微少凹
凸を確実に検出することを可能にしたものであり、シリ
コンウエハなどのエッジ部のように立体的な面あるいは
不定形の面の微少凹凸状欠陥を検出するのに用いること
ができる。
INDUSTRIAL APPLICABILITY The surface defect detection method and the surface defect detection device of the present invention are all illuminated by a diffused light source and imaged by the image pickup means of the telecentric optical system, so that even a three-dimensionally shaped image pickup object can be obtained. It is possible to reliably detect the minute unevenness of the surface to be inspected, and it is used to detect the minute unevenness-like defects of a three-dimensional surface or an irregular surface such as an edge part of a silicon wafer. be able to.

【0044】また、光源および受光を近赤外線光とする
ことにより、汚れを欠陥と過って認識することを防ぎ検
出精度を向上させることを可能にする。
Further, by using near-infrared light as the light source and the received light, it is possible to prevent the stain from being mistakenly recognized as a defect and improve the detection accuracy.

【0045】さらに、撮像手段にラインセンサアレイを
用いることで、高い解像度およびスループットが得ら
れ、生産性の向上に寄与すること大なるものがある。
Further, by using a line sensor array for the image pickup means, high resolution and throughput can be obtained, which greatly contributes to improvement in productivity.

【図面の簡単な説明】[Brief description of drawings]

【図1】本実施例の表面欠陥装置の外観を示す説明図で
ある。
FIG. 1 is an explanatory diagram showing an appearance of a surface defect device of this embodiment.

【図2】本実施例の表面欠陥装置の側面図である。FIG. 2 is a side view of the surface defect device according to the present embodiment.

【図3】シリコンウエハのエッジ部の詳細説明図であ
る。
FIG. 3 is a detailed explanatory diagram of an edge portion of a silicon wafer.

【図4】テレセントリック光学系を説明する説明図であ
る。
FIG. 4 is an explanatory diagram illustrating a telecentric optical system.

【図5】微少凹凸のある面を説明する説明図である。FIG. 5 is an explanatory diagram for explaining a surface having minute unevenness.

【図6】他の立体的な検査対象物を示す説明図である。FIG. 6 is an explanatory diagram showing another three-dimensional inspection object.

【符号の説明】[Explanation of symbols]

1 表面欠陥検査装置 2 上面用撮像手段 3 側面用撮像手段 4 下面用撮像手段 5 C型光源 6 シリコンウエハ 7 画像処理装置 8 テレセントリック光学系撮像手段 51 発光面 61 上側テーパ面 62 側面 63 下側テーパ面 81 像側レンズ 82 絞り 83 リニアセンサ側レンズ 84 リニアセンサアレイ 91A、91B、91C 検査対象面 92A、92B、92C 撮像手段 93 拡散光光源 1 Surface defect inspection equipment 2 Upper surface imaging means 3 Side image pickup means 4 Lower surface imaging means 5 C type light source 6 Silicon wafer 7 Image processing device 8 Telecentric optical system imaging means 51 Light emitting surface 61 Upper tapered surface 62 side 63 Lower taper surface 81 Image side lens 82 Aperture 83 Linear sensor side lens 84 Linear sensor array 91A, 91B, 91C Inspection surface 92A, 92B, 92C Imaging means 93 Diffuse light source

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2F065 AA49 BB01 CC19 FF04 FF42 GG01 GG11 HH02 JJ03 JJ05 JJ08 JJ09 JJ26 LL22 LL30 LL59 2G051 AA51 AB01 AB03 BA06 BB01 CA03 CA07 CB05 CC07 CC09 DA08 EA12    ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 2F065 AA49 BB01 CC19 FF04 FF42                       GG01 GG11 HH02 JJ03 JJ05                       JJ08 JJ09 JJ26 LL22 LL30                       LL59                 2G051 AA51 AB01 AB03 BA06 BB01                       CA03 CA07 CB05 CC07 CC09                       DA08 EA12

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 移動する検査対象物の鏡面状表面の微少
凹凸欠陥を検出する表面欠陥検出方法であって、拡散光
光源によって検査対象物の鏡面状表面を照明し、検査対
象物の鏡面状表面の画像をテレセントリック光学系とリ
ニアセンサアレイで構成された複数の撮像手段により撮
像し、このリニアセンサアレイから出力される信号の明
暗度から鏡面状検査対象物表面の微少凹凸欠陥を検出す
ることを特徴とする表面欠陥検出方法。
1. A surface defect detection method for detecting microscopic irregularity defects on a mirror-like surface of a moving inspection object, which comprises illuminating the mirror-like surface of the inspection object with a diffused light source, An image of the surface is picked up by a plurality of image pickup means composed of a telecentric optical system and a linear sensor array, and minute unevenness defects on the surface of the mirror-like inspection object are detected from the brightness of the signal output from the linear sensor array. A method for detecting surface defects.
【請求項2】 前記拡散光光源は近赤外線光源であるこ
とを特徴とする請求項1に記載の表面欠陥検出方法。
2. The surface defect detection method according to claim 1, wherein the diffused light source is a near infrared light source.
【請求項3】 前記撮像手段は近赤外線フイルターを備
え、リニアセンサアレイは近赤外線光のみ受光すること
を特徴とする請求項1に記載の表面欠陥検出方法。
3. The surface defect detection method according to claim 1, wherein the image pickup means includes a near infrared ray filter, and the linear sensor array receives only near infrared ray light.
【請求項4】 移動する検査対象物の鏡面状表面の微少
凹凸欠陥を検出する表面欠陥検出装置であって、検査対
象物の鏡面状表面を拡散光によって照明する拡散光光源
と、検査対象物の鏡面状表面の画像を撮像するテレセン
トリック光学系とリニアセンサアレイで構成された複数
の撮像手段と、このリニアセンサアレイから出力される
信号の明暗度から鏡面状検査対象物表面の微少凹凸欠陥
を検出する画像処理手段とを備えることを特徴とする表
面欠陥検出装置。
4. A surface defect detection device for detecting minute unevenness defects on a mirror-like surface of a moving inspection object, the diffused light source illuminating the mirror-like surface of the inspection object with diffused light, and the inspection object. A plurality of image pickup means composed of a telecentric optical system and a linear sensor array for picking up an image of the mirror-like surface of, and the minute unevenness defect of the surface of the mirror-like inspection target object from the brightness of the signal output from the linear sensor array. An image processing means for detecting the surface defect detecting device.
【請求項5】 前記拡散光光源は近赤外線光源であるこ
とを特徴とする請求項4に記載の表面欠陥検出装置。
5. The surface defect detection device according to claim 4, wherein the diffused light source is a near infrared light source.
【請求項6】 前記撮像手段は近赤外線フイルターを備
え、リニアセンサアレイは近赤外線光のみ受光すること
を特徴とする請求項4に記載の表面欠陥検出装置。
6. The surface defect detection device according to claim 4, wherein the image pickup means includes a near infrared ray filter, and the linear sensor array receives only near infrared ray light.
【請求項7】 前記検査対象物は、円板のエッジ部であ
り、前記拡散光光源は光源部が円弧状または楕円弧状ま
たは門型であり、前記検査対象物の面取り部および側面
部を撮像する複数の前記撮像手段を備えることを特徴と
する請求項4に記載の表面欠陥検出装置。
7. The inspection object is an edge portion of a disk, and the diffused light source has a light source portion in an arc shape, an elliptic arc shape, or a gate shape, and images the chamfered portion and the side surface portion of the inspection object. The surface defect detection apparatus according to claim 4, further comprising a plurality of the image pickup units that perform:
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