WO2009013857A1 - Method for measuring rotation angle of bonded wafer - Google Patents

Method for measuring rotation angle of bonded wafer Download PDF

Info

Publication number
WO2009013857A1
WO2009013857A1 PCT/JP2008/001752 JP2008001752W WO2009013857A1 WO 2009013857 A1 WO2009013857 A1 WO 2009013857A1 JP 2008001752 W JP2008001752 W JP 2008001752W WO 2009013857 A1 WO2009013857 A1 WO 2009013857A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
bonding
rotation angle
bonded wafer
bonded
Prior art date
Application number
PCT/JP2008/001752
Other languages
French (fr)
Japanese (ja)
Inventor
Norihiro Kobayashi
Tohru Ishizuka
Nobuhiko Noto
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to EP08776764A priority Critical patent/EP2172963A4/en
Priority to US12/452,070 priority patent/US7861421B2/en
Publication of WO2009013857A1 publication Critical patent/WO2009013857A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A bonded wafer (10) is manufactured by bonding a base wafer (1), which has notches (1N, 2N) on the outer periphery for indicating crystal orientation, and a bonding wafer (2) at a desired rotation angle by using the notches, and by thinning the bonding wafer (2). In a method for measuring the rotation angle of the bonded wafer, the outline (2R) of the thinned bonding wafer is observed, the positional direction of the notch (2N) of the bonding wafer viewed from the center (C) of the bonded wafer is calculated by using the outline (2R), an angle formed by the positional direction of the notch (2N) of the calculated bonding wafer and the positional direction (1N) of the notch of the base wafer is calculated, and the rotating angle of the base wafer (1) and the bonding wafer (2) is measured. Thus, the rotation angle of the notches of the base wafer and the bonding wafer can be accurately and simply measured on the bonded wafer manufacturing line.
PCT/JP2008/001752 2007-07-25 2008-07-03 Method for measuring rotation angle of bonded wafer WO2009013857A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08776764A EP2172963A4 (en) 2007-07-25 2008-07-03 Method for measuring rotation angle of bonded wafer
US12/452,070 US7861421B2 (en) 2007-07-25 2008-07-03 Method for measuring rotation angle of bonded wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007193544A JP5190666B2 (en) 2007-07-25 2007-07-25 Measuring method of rotation angle of bonded wafer
JP2007-193544 2007-07-25

Publications (1)

Publication Number Publication Date
WO2009013857A1 true WO2009013857A1 (en) 2009-01-29

Family

ID=40281119

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001752 WO2009013857A1 (en) 2007-07-25 2008-07-03 Method for measuring rotation angle of bonded wafer

Country Status (4)

Country Link
US (1) US7861421B2 (en)
EP (1) EP2172963A4 (en)
JP (1) JP5190666B2 (en)
WO (1) WO2009013857A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5789911B2 (en) * 2009-10-06 2015-10-07 株式会社ジェイテクト Rotation angle detection device and electric power steering device
US8570514B2 (en) * 2011-06-20 2013-10-29 Kla-Tencor Corporation Optical system polarizer calibration
JP5836223B2 (en) * 2011-12-02 2015-12-24 株式会社神戸製鋼所 Rotation deviation amount measuring device for bonding substrate, method for measuring rotation deviation amount of bonding substrate, and manufacturing method of bonding substrate
US8871605B2 (en) * 2012-04-18 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for fabricating and orienting semiconductor wafers
EP2852972B1 (en) * 2012-06-12 2016-02-24 Thallner, Erich, Dipl.-Ing. Apparatus and method for aligning substrates
CN113658901B (en) * 2021-10-21 2022-01-21 西安奕斯伟材料科技有限公司 Method and system for positioning center of V-shaped notch of wafer and computer storage medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134374A (en) 2000-10-25 2002-05-10 Mitsubishi Electric Corp Semiconductor wafer and its manufacturing method and device
JP2003139523A (en) * 2001-11-02 2003-05-14 Nippon Electro Sensari Device Kk Surface defect detecting method and surface defect detecting device
JP2003243465A (en) * 2002-02-19 2003-08-29 Honda Electron Co Ltd Inspection equipment for wafer
JP2006128440A (en) * 2004-10-29 2006-05-18 Renesas Technology Corp Semiconductor manufacturing equipment and method of manufacturing semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4071476B2 (en) * 2001-03-21 2008-04-02 株式会社東芝 Semiconductor wafer and method for manufacturing semiconductor wafer
JP2003128440A (en) * 2001-10-23 2003-05-08 Fujikura Ltd Recoating apparatus for optical fiber
JP2004119943A (en) * 2002-09-30 2004-04-15 Renesas Technology Corp Semiconductor wafer and manufacturing method therefor
JP4385699B2 (en) * 2003-09-25 2009-12-16 オムロン株式会社 Semiconductor wafer direction adjusting method and semiconductor wafer direction adjusting apparatus
EP1764488B1 (en) * 2005-09-20 2008-12-31 Carl Freudenberg KG Angle measuring device
JP2007147381A (en) * 2005-11-25 2007-06-14 Ntn Corp Rotation angle detection sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134374A (en) 2000-10-25 2002-05-10 Mitsubishi Electric Corp Semiconductor wafer and its manufacturing method and device
JP2003139523A (en) * 2001-11-02 2003-05-14 Nippon Electro Sensari Device Kk Surface defect detecting method and surface defect detecting device
JP2003243465A (en) * 2002-02-19 2003-08-29 Honda Electron Co Ltd Inspection equipment for wafer
JP2006128440A (en) * 2004-10-29 2006-05-18 Renesas Technology Corp Semiconductor manufacturing equipment and method of manufacturing semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2172963A4 *

Also Published As

Publication number Publication date
EP2172963A1 (en) 2010-04-07
JP2009032802A (en) 2009-02-12
EP2172963A4 (en) 2012-08-22
US7861421B2 (en) 2011-01-04
JP5190666B2 (en) 2013-04-24
US20100132205A1 (en) 2010-06-03

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