JP2003133357A - Semiconductor device, semiconductor device mounting structure, and connection member for mounting - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, a semiconductor device mounting structure, and a connection member for mounting, which have less damages due to heat or stress for improvement in reliability. SOLUTION: An IC chip 12, having a plurality of protruding electrode sections or bumps 13, is installed on a substrate 11 by flip-chip mounting. The bumps 13 and conductive pattern sections 111 are electrically connected through a connection member 14 intended for flip-chip mounting. In this embodiment, the conductive pattern sections 111 have sharp points on the side of mounting, each having a conical shape. The parts of the bumps 13 on the side of the IC chip 12 are deformed, in matching with the pointed shapes, and have an interlocked connection structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention particularly relates to flip chip mounting, and a semiconductor device for improving the reliability of a joint portion,
The present invention relates to a mounting structure of a semiconductor device and a mounting connection member.

[0002]

2. Description of the Related Art Semiconductor devices are often mounted by mounting a product using a lead frame or by mounting a product on a circuit board by using external connection terminals such as bumps. Among them, a CSP (Chip Size Package) has a structure in which bumps are formed on pads on the surface of a semiconductor bare chip and are mounted on a substrate. Therefore, the CSP has a small mounting area, and has a limited mounting surface, such as a portable device.
Used for products that require miniaturization.

FIG. 10 is a sectional view showing a conventional mounting mode applied to a CSP. I on the substrate 101 that is the mounting side
The C chip 102 is flip-chip mounted. That is, the IC chip 102 has a plurality of bumps, one of which is shown as the bump 103.

The bump 103 and the conductive pattern 101p on the mounting substrate 101 are joined by using, for example, ACF (Anisotropic Conductive Film). In this case, an organic material such as glass epoxy is often used as the mounting substrate 101.

[0005]

When the IC chip 102 having the CSP structure is mounted on the mounting board 101 as described above, the mounting board 101 made of an epoxy material or the like and the IC chip 10 are mounted.
The coefficient of thermal expansion is different from that of silicon that constitutes No. 2. Arrow F
1 and F2 are a mounting substrate 101 and an IC chip 10, respectively.
The difference in the magnitude of stress due to thermal expansion of No. 2 is simply represented by the length of the arrow.

The connection portion of the external terminal (solder bump) 103 is cracked by the crack CRK due to the influence of the stress as described above.
May cause When the crack CRK occurs, there is a problem that the electric resistance increases, and in the worst case, a defect such as peeling and opening occurs.

The present invention has been made in consideration of the above circumstances, and is a semiconductor device that improves reliability with little thermal or stress damage even if stress is applied due to a difference in coefficient of thermal expansion. A mounting structure for a semiconductor device and a mounting connection member are provided.

[0008]

In the semiconductor device according to [Claim 1] of the present invention, the protruding electrode portion on the main surface of the semiconductor integrated circuit chip and the electrode pattern portion on the mounting side are electrically connected. Including a mounting mode, a connection provided at least in the mounting mode and related to bonding, and the electrode pattern section on the mounting side has a sharp shape and at least the protruding electrode section on the chip side is deformed and meshed with the sharp shape. And a structure.

According to the above semiconductor device of the present invention, since the electrode pattern portion on the mounting side has a sharp shape, the connection area is large and the connection is strengthened by the engagement.
As a result, the structure is less likely to be deformed by stress.

The sharp shape of the electrode pattern portion may be formed by a surface having repeated irregularities. Further, the member relating to the adhesion is characterized by being selected from an anisotropic conductive film, an anisotropic conductive paste, and an insulating resin paste.

A semiconductor device according to [Claim 4] of the present invention includes a mounting form in which a protruding electrode portion on a main surface of a semiconductor integrated circuit chip and an electrode pattern portion on a mounting side are electrically connected, At least a member related to adhesion provided in the mounting form, and conductive particles having a sharp shape that is added to the member related to adhesion and meshes with both the electrode pattern portion on the mounting side and the protruding electrode portion on the chip side. It is characterized by having done.

According to the above-mentioned semiconductor device of the present invention, the conductive particles having a sharp shape are bited into the surfaces of the connecting portions. The engagement strengthens the connection. As a result, the structure is less likely to be deformed by stress. In addition,
The member relating to the adhesion is characterized by being selected from an anisotropic conductive film and an anisotropic conductive paste.

A semiconductor device according to [Claim 6] of the present invention includes a mounting form in which a protruding electrode portion on a main surface of a semiconductor integrated circuit chip and an electrode pattern portion on a mounting side are electrically connected, It is characterized by comprising at least a member relating to adhesion provided in the mounting form, and an elastic conductive rubber provided between both the electrode pattern section on the mounting side and the protruding electrode section on the chip side.

According to the above-described semiconductor device of the present invention, the elastic conductive rubber follows a certain degree of strain of the connection portion due to stress, is hard to peel off, and contributes to the improvement of reliability of bonding. The member relating to the adhesion is characterized by being an insulating resin paste. Further, in the semiconductor device according to the above-mentioned invention, the mounting side having the electrode pattern portion is a package substrate provided with an external electrode.

According to a ninth aspect of the present invention, there is provided a semiconductor device mounting structure, wherein a member for connecting a protruding electrode portion on a main surface of a semiconductor integrated circuit chip and an electrode pattern portion on a mounting side is provided, and the protruding portion is provided. It is characterized in that the electrode portion and the electrode pattern portion are electrically connected to each other without any deformation.

In order to accompany the above deformation, at least the electrode pattern portion on the mounting side has a conical shape. In addition, at least the electrode pattern portion on the mounting side has a repeating surface of rough irregularities.

An anisotropic conductive film, an anisotropic conductive paste, an insulating resin paste, an elastic material is used as a member for connecting the protruding electrode portion on the main surface of the semiconductor integrated circuit chip and the electrode pattern portion on the mounting side. One of the conductive rubbers is used.

The mounting connecting member according to [Claim 13] of the present invention is added with conductive particles for connecting the protruding electrode portion on the main surface of the semiconductor integrated circuit chip and the electrode pattern portion on the mounting side. In the above member, the conductive particles have an arbitrary sharp shape.

According to the above-mentioned mounting connecting member of the present invention, the conductive particles having a pointed shape bite into the surfaces of the connecting portions and mesh with each other to strengthen the connection. As a result, the structure is less likely to be deformed by stress.

[0020]

1 is a sectional view showing a semiconductor device applied to a CSP (Chip Size Package) according to a first embodiment of the present invention. IC on the substrate 11 that is the mounting side
The chip 12 is flip-chip mounted. That is, the IC chip 12 has a plurality of protruding electrode portions, that is, bumps 1.
Have three. The bumps 13 and the conductive pattern portions 111 on the substrate 11 are electrically connected to each other via the connecting members 14 for flip chip mounting.

In this embodiment, the electrode pattern portion 111 on the mounting side has a sharp shape. The sharp shape here is a single conical shape. The conical shape may be formed by retrofitting. Due to this sharp shape, at least I
The bump 13 on the C chip 12 side is deformed to have a meshed connection structure.

2 (a) and 2 (b) are respectively the above-mentioned FIG.
FIG. 4 is an enlarged cross-sectional view of a main part for explaining the connection structure of FIG. For example, a stud-type bump 13 containing Au as a main component and a sharp electrode pattern portion 1 containing Cu on the mounting side as a main component
11 and NCP (insulating resin paste (Non Conductive
(Paste)) and is opposed (FIG. 2 (a)). After that, pressing force and heat are applied, and at least the bumps 13 are
It is deformed with respect to the electrode pattern portion 111 having a sharp shape, so that a meshed connection structure is realized (FIG. 2B).

Connection member 14 for flip-chip mounting
NCP was used in, but as another pressure welding paste, ACP (anisotropic conductive paste (Anisotropic Conductor
tivePaste)) can be considered as a substitute. In addition, ACF (Anisotropic Conductive Film)
Film)) may be substituted.

According to the configuration of the first embodiment, since the mounting-side electrode pattern portion 111 has a sharp shape,
The connection area is large and the connection is strengthened by meshing. As a result, the structure is less likely to be deformed by stress.

FIG. 3 shows a CS according to the second embodiment of the present invention.
It is sectional drawing which shows the semiconductor device applied to P. The same parts as those in the first embodiment will be described with the same reference numerals as those in FIG. The IC chip 12 is flip-chip mounted on the substrate 11 that is the mounting side. That is, the IC chip 1
2 has a plurality of bump electrode portions, that is, bumps 13. The bumps 13 and the conductive pattern portions 211 on the substrate 21 are electrically connected via the connecting members 24 for flip-chip mounting.

In this embodiment, the electrode pattern portion 211 on the mounting side has a sharp shape constituted by repeated surfaces of irregularities. This sharp shape is achieved by physical blasting, honing, sputtering, or other processing. As a result, at least the bumps 13 on the IC chip 12 side are deformed with respect to this sharp shape, and have a connection structure in which they mesh with each other.

FIGS. 4 (a) and 4 (b) are respectively shown in FIG.
FIG. 4 is an enlarged cross-sectional view of a main part for explaining the connection structure of FIG. For example, the stud-type bump 13 containing Au as a main component and the electrode pattern portion 211 having a sharp shape formed by repeating the unevenness containing Cu as a main component on the mounting side are opposed to each other via an ACF (anisotropic conductive film). (FIG. 4 (a)). afterwards,
Pressing force and heat are applied, and at least the bump 13 is deformed with respect to the sharp electrode pattern portion 211, and a meshed connection structure is realized (FIG. 4B).

Connection member 24 for flip-chip mounting
Although ACF was used as the above, it is conceivable to use ACP (anisotropic conductive paste) as another pressure-bonding paste.

According to the configuration of the second embodiment described above, the electrode pattern portion 111 on the mounting side has a plurality of sharpened shapes each having a repetitive uneven surface. As a result, the connection area is large, and the connection is strengthened by meshing, which makes it difficult to deform due to stress. There is also an advantage that the capture rate of the conductive particles is improved.

FIG. 5 shows a CS according to the third embodiment of the present invention.
It is sectional drawing which shows the semiconductor device applied to P. The same parts as those in the first embodiment will be described with the same reference numerals as those in FIG. The IC chip 12 is flip-chip mounted on the substrate 11 that is the mounting side. That is, the IC chip 1
2 has a plurality of bump electrode portions, that is, bumps 13. The bumps 13 and the conductive pattern portions 311 on the substrate 31 are electrically connected via the flip-chip mounting connection members 34.

In this embodiment, the conductive particles in the connecting member 34 have an arbitrary sharp shape. This allows the IC
The bump 13 on the chip 12 side, the electrode pattern portion 3 on the mounting side
11 Conductive particles dig into the surfaces of both to realize a meshed connection structure.

FIGS. 6 (a) and 6 (b) are respectively shown in FIG.
FIG. 4 is an enlarged cross-sectional view of a main part for explaining the connection structure of FIG. For example, the stud-type bump 13 mainly composed of Au and the electrode pattern portion 311 mainly composed of Cu on the mounting side are
It is opposed via an ACF (anisotropic conductive film) (FIG. 6A). After that, pressing force and heat are applied to the bump 1
3 and the electrode pattern portion 311 both have conductive particles that bite like a wedge, and a meshed connection structure is realized (FIG. 6B).

Connection member 34 for flip-chip mounting
As the ACF, conductive particles having a sharpened shape were used as the above, but in addition, a specification in which the conductive particles of ACP (anisotropic conductive paste) as a pressure-bonding paste have a sharpened shape can be considered.

According to the structure of the third embodiment, since the conductive particles in the flip-chip mounting connection member 34 have a sharp shape, the bump 13 and the electrode pattern portion 311 are formed.
The connection is strengthened by the engagement of both. As a result, the structure is less likely to be deformed by stress.

In addition to the electrode pattern portion 311, an electrode pattern portion 211 having a sharp shape by repeating the unevenness shown in the second embodiment may be used. This can be expected to further improve the capture rate of the conductive particles.

FIG. 7 shows a CS according to the fourth embodiment of the present invention.
It is sectional drawing which shows the semiconductor device applied to P. The same parts as those in the first embodiment will be described with the same reference numerals as those in FIG. The IC chip 12 is flip-chip mounted on the substrate 11 that is the mounting side. That is, the IC chip 1
2 has a plurality of bump electrode portions, that is, bumps 13. The bumps 13 and the conductive pattern portion 411 on the substrate 11 are electrically connected via the elastic conductive rubber 44 for flip-chip mounting. An adhesive protection member or the like may be provided between the flip chip mountings on the substrate 11.

In this embodiment, the elastic conductive rubber 44 containing carbon, for example, is used as the connecting member. As a result, the elastic conductive rubber 44 adheres to the surfaces of both the bump 13 on the IC chip 12 side and the electrode pattern portion 411 on the mounting side,
It has a stress-resistant connection structure. That is, the elastic conductive rubber 44 is configured to follow a certain amount of strain of the connection portion due to stress. This makes it difficult to peel off,
It contributes to the improvement of the reliability of joining.

FIGS. 8 (a) and 8 (b) are respectively shown in FIG.
FIG. 4 is an enlarged cross-sectional view of a main part for explaining the connection structure of FIG. For example, the electrode pattern portion 41 whose main component is Cu on the mounting side
Elastic conductive rubber 44 is applied to a predetermined portion of No. 1 (or bump 13 having stud type Au as a main component) (FIG. 8).
(A)). Then, pressing force and heat are applied to the bumps 13
The elastic conductive rubber 44 is fixed between the electrode and the electrode pattern portion 311 to realize a connection structure that follows the stress (FIG. 8).
(B)).

It is conceivable to provide NCP (insulating resin paste) in combination with the elastic conductive rubber 44 for flip chip mounting. In addition to the electrode pattern portion 411,
The electrode pattern portion 211 having a sharp shape by repeating the unevenness shown in the second embodiment may be used. This can be expected to improve the adhesion rate of the elastic conductive rubber 44.

According to the configuration of the fourth embodiment, the bump 13 on the IC chip 12 side and the electrode pattern portion 41 on the mounting side are provided.
1. The elastic conductive rubber 44 is adhered to the surface of both of them and has a connection structure that is resistant to stress. The elastic conductive rubber 44 flexibly follows a certain amount of strain of the connection portion due to stress, is hard to be peeled off, and the reliability of bonding is improved.

According to each of the above embodiments, the electrode pattern portion (111 or 211) on the mounting side has a sharp shape,
The connection area is enlarged and the connection parts are meshed by deformation. In addition, the connection is strengthened by meshing such that the conductive particles sandwiched between the connection members (34) have a sharp shape. This makes it possible to obtain a structure that is unlikely to be deformed by stress. Alternatively, by sandwiching the elastic conductive rubber (44) in the connection portion, it is possible to obtain a structure in which peeling is less likely to occur and the joining reliability is improved by following a certain degree of distortion of the connection portion due to stress.

The board 11 on the mounting side in each drawing
˜41 may be a glass epoxy type circuit board or a base board having external terminals (for example, ball electrodes) for forming a CSP (see FIG. 9).

[0043]

As described above, according to the present invention, by emphasizing the meshing of the connecting portion, it is possible to obtain a structure which is not easily deformed by stress. Alternatively, the flexible followability of the connection part can handle the distortion of the connection part due to stress, making it difficult to peel off,
A structure that improves the reliability of bonding is obtained. As a result, even if stress is applied due to the difference in coefficient of thermal expansion, a semiconductor device that improves reliability with less thermal and stress damage,
A mounting structure for a semiconductor device and a mounting connection member can be provided.

[Brief description of drawings]

FIG. 1 shows a CSP (Chip Siz) according to a first embodiment of the present invention.
It is sectional drawing which shows the semiconductor device applied to e Package.

2 (a) and 2 (b) are enlarged cross-sectional views each illustrating a connection structure of FIG.

FIG. 3 is a cross-sectional view showing a semiconductor device applied to a CSP according to a second exemplary embodiment of the present invention.

4 (a) and 4 (b) are enlarged cross-sectional views of main parts for explaining the connection structure of FIG.

FIG. 5 is a sectional view showing a semiconductor device applied to a CSP according to a third embodiment of the present invention.

6 (a) and 6 (b) are enlarged cross-sectional views each illustrating a connection structure of FIG.

FIG. 7 is a sectional view showing a semiconductor device applied to a CSP according to a fourth embodiment of the present invention.

8 (a) and 8 (b) are enlarged cross-sectional views each illustrating a connection structure of FIG. 7.

FIG. 9 is a cross-sectional view showing a conventional mounting mode applied to a CSP.

FIG. 10 is a cross-sectional view showing a conventional mounting mode applied to a CSP.

[Explanation of symbols]

11,21,31,41 ... Substrates 111, 211, 311, 411 ... Conductive pattern portion (connection point) 12 ... IC chip 13 ... Bumps 14, 24, 34 ... Connection member 44 ... Elastic conductive rubber

Claims (13)

[Claims] 1. A mounting mode in which a protruding electrode section on a main surface of a semiconductor integrated circuit chip and an electrode pattern section on a mounting side are electrically connected to each other, and a member provided in the mounting mode and at least relating to adhesion, A semiconductor device comprising: a connection structure in which the electrode pattern portion on the mounting side has a sharp shape and at least the protruding electrode portion on the chip side is deformed and meshed with the sharp shape. 2. The semiconductor device according to claim 1, wherein the pointed shape of the electrode pattern portion is formed by a repeating surface of irregularities. 3. The semiconductor device according to claim 1, wherein the member relating to adhesion is selected from an anisotropic conductive film, an anisotropic conductive paste, and an insulating resin paste. 4. A mounting mode in which a protruding electrode section on a main surface of a semiconductor integrated circuit chip and an electrode pattern section on a mounting side are electrically connected to each other, and a member provided at least in the mounting mode and relating to adhesion, A semiconductor device, comprising: a conductive particle having a sharp shape, which is added to the member for adhesion and meshes with both the electrode pattern portion on the mounting side and the protruding electrode portion on the chip side. 5. The semiconductor device according to claim 1, wherein the member relating to adhesion is selected from an anisotropic conductive film and an anisotropic conductive paste. 6. A mounting mode in which a protruding electrode section on a main surface of a semiconductor integrated circuit chip and an electrode pattern section on a mounting side are electrically connected to each other, and a member provided in the mounting mode and at least relating to adhesion, A semiconductor device comprising: an electrode pattern portion on the mounting side and an elastic conductive rubber provided between both the protruding electrode portions on the chip side. 7. The semiconductor device according to claim 6, wherein the member relating to the adhesion is an insulating resin paste. 8. The semiconductor device according to claim 1, wherein the mounting side having the electrode pattern portion is a package substrate including an external electrode. 9. A member for connecting a protruding electrode portion on a main surface of a semiconductor integrated circuit chip and an electrode pattern portion on a mounting side is provided, and the protruding electrode portion and the electrode pattern portion are deformed in both or one of them. A semiconductor device mounting structure, characterized in that they are electrically connected together. 10. The mounting structure for a semiconductor device according to claim 9, wherein at least the electrode pattern portion on the mounting side has a conical shape. 11. The semiconductor device according to claim 9, wherein at least the electrode pattern portion on the mounting side has a repeating surface of rough irregularities. 12. An anisotropic conductive film, an anisotropic conductive paste, an insulating resin paste, an elastic material, which serves as a member for connecting the bump electrode portion on the main surface of the semiconductor integrated circuit chip and the electrode pattern portion on the mounting side. 12. The mounting structure for a semiconductor device according to claim 9, wherein any one of conductive rubbers is used. 13. A member to which conductive particles for connecting the protruding electrode portion on the main surface of the semiconductor integrated circuit chip and the electrode pattern portion on the mounting side are added, wherein the conductive particle has an arbitrary sharp shape. A mounting connection member having.