JP2003027280A - めっき装置 - Google Patents

めっき装置

Info

Publication number
JP2003027280A
JP2003027280A JP2001218343A JP2001218343A JP2003027280A JP 2003027280 A JP2003027280 A JP 2003027280A JP 2001218343 A JP2001218343 A JP 2001218343A JP 2001218343 A JP2001218343 A JP 2001218343A JP 2003027280 A JP2003027280 A JP 2003027280A
Authority
JP
Japan
Prior art keywords
plating
substrate
plating solution
space
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001218343A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003027280A5 (https=
Inventor
Akihisa Hongo
明久 本郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2001218343A priority Critical patent/JP2003027280A/ja
Priority to TW091115893A priority patent/TW554396B/zh
Priority to CNB028143809A priority patent/CN1280872C/zh
Priority to US10/483,883 priority patent/US20040237896A1/en
Priority to KR10-2004-7000624A priority patent/KR20040017306A/ko
Priority to PCT/JP2002/007247 priority patent/WO2003009343A2/en
Publication of JP2003027280A publication Critical patent/JP2003027280A/ja
Publication of JP2003027280A5 publication Critical patent/JP2003027280A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
JP2001218343A 2001-07-18 2001-07-18 めっき装置 Pending JP2003027280A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001218343A JP2003027280A (ja) 2001-07-18 2001-07-18 めっき装置
TW091115893A TW554396B (en) 2001-07-18 2002-07-17 Plating apparatus
CNB028143809A CN1280872C (zh) 2001-07-18 2002-07-17 电镀装置
US10/483,883 US20040237896A1 (en) 2001-07-18 2002-07-17 Plating apparatus
KR10-2004-7000624A KR20040017306A (ko) 2001-07-18 2002-07-17 도금장치
PCT/JP2002/007247 WO2003009343A2 (en) 2001-07-18 2002-07-17 Plating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001218343A JP2003027280A (ja) 2001-07-18 2001-07-18 めっき装置

Publications (2)

Publication Number Publication Date
JP2003027280A true JP2003027280A (ja) 2003-01-29
JP2003027280A5 JP2003027280A5 (https=) 2005-04-07

Family

ID=19052532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001218343A Pending JP2003027280A (ja) 2001-07-18 2001-07-18 めっき装置

Country Status (6)

Country Link
US (1) US20040237896A1 (https=)
JP (1) JP2003027280A (https=)
KR (1) KR20040017306A (https=)
CN (1) CN1280872C (https=)
TW (1) TW554396B (https=)
WO (1) WO2003009343A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005043069A (ja) * 2003-07-22 2005-02-17 Dainippon Screen Mfg Co Ltd 吸光度計、濃度測定装置、めっき液分析装置、めっき装置、めっき液分析方法、およびめっき方法
JP2007525591A (ja) * 2003-04-18 2007-09-06 アプライド　マテリアルズ　インコーポレイテッド 複数の化学物質メッキシステム
US7670465B2 (en) 2002-07-24 2010-03-02 Applied Materials, Inc. Anolyte for copper plating
JP6937972B1 (ja) * 2021-02-25 2021-09-22 株式会社荏原製作所 めっき装置及びめっき装置の気泡除去方法
JP7732126B1 (ja) * 2024-07-04 2025-09-01 株式会社荏原製作所 めっき装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979464B2 (ja) * 2001-12-27 2007-09-19 株式会社荏原製作所 無電解めっき前処理装置及び方法
WO2006060643A2 (en) * 2004-12-03 2006-06-08 University Of Pittsburgh Novel bladder matrix protein peptides and methods of detection of bladder cancer
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100809594B1 (ko) * 2006-09-12 2008-03-04 세메스 주식회사 척킹부재 및 이를 포함하는 스핀헤드
KR101367898B1 (ko) * 2007-05-17 2014-02-26 위순임 플라즈마 감금 장벽 및 이를 구비한 기판 처리 시스템 및방법
KR20110051588A (ko) * 2009-11-10 2011-05-18 삼성전자주식회사 기판 도금 장치 및 방법
GB201021326D0 (en) * 2010-12-16 2011-01-26 Picofluidics Ltd Electro chemical deposition apparatus
US20140220777A1 (en) * 2013-02-05 2014-08-07 International Business Machines Corporation Processing system for combined metal deposition and reflow anneal for forming interconnect structures
KR102697922B1 (ko) * 2019-01-09 2024-08-22 삼성전자주식회사 원자층 증착 장치 및 이를 이용한 박막 형성 방법
TWI748524B (zh) * 2019-09-17 2021-12-01 日商國際電氣股份有限公司 基板冷卻單元，基板處理裝置，半導體裝置的製造方法及程式
CN113097096A (zh) * 2019-12-23 2021-07-09 盛美半导体设备(上海)股份有限公司 半导体设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679059A (en) * 1994-11-29 1997-10-21 Ebara Corporation Polishing aparatus and method
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
KR100597024B1 (ko) * 1998-03-02 2006-07-04 가부시키가이샤 에바라 세이사꾸쇼 기판의 도금장치
JP2002531702A (ja) * 1998-11-28 2002-09-24 エーシーエム リサーチ，インコーポレイティド 半導体ワークの電気めっきおよび／または電解研磨中に半導体ワークを保持して位置決めする方法および装置
US6267853B1 (en) * 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
JP3556882B2 (ja) * 2000-05-10 2004-08-25 東京エレクトロン株式会社 塗布現像処理システム
US6709563B2 (en) * 2000-06-30 2004-03-23 Ebara Corporation Copper-plating liquid, plating method and plating apparatus
JP3284496B2 (ja) * 2000-08-09 2002-05-20 株式会社荏原製作所 めっき装置及びめっき液除去方法
US6790763B2 (en) * 2000-12-04 2004-09-14 Ebara Corporation Substrate processing method
JP2002212786A (ja) * 2001-01-17 2002-07-31 Ebara Corp 基板処理装置
JP2002220692A (ja) * 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
CN1253606C (zh) * 2001-02-23 2006-04-26 株式会社荏原制作所 镀铜溶液、镀敷方法和镀敷装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7670465B2 (en) 2002-07-24 2010-03-02 Applied Materials, Inc. Anolyte for copper plating
JP2007525591A (ja) * 2003-04-18 2007-09-06 アプライド　マテリアルズ　インコーポレイテッド 複数の化学物質メッキシステム
JP2005043069A (ja) * 2003-07-22 2005-02-17 Dainippon Screen Mfg Co Ltd 吸光度計、濃度測定装置、めっき液分析装置、めっき装置、めっき液分析方法、およびめっき方法
JP6937972B1 (ja) * 2021-02-25 2021-09-22 株式会社荏原製作所 めっき装置及びめっき装置の気泡除去方法
WO2022180727A1 (ja) * 2021-02-25 2022-09-01 株式会社荏原製作所 めっき装置及びめっき装置の気泡除去方法
CN115244228A (zh) * 2021-02-25 2022-10-25 株式会社荏原制作所 镀覆装置以及镀覆装置的气泡除去方法
CN115244228B (zh) * 2021-02-25 2023-08-25 株式会社荏原制作所 镀覆装置以及镀覆装置的气泡除去方法
US12152312B2 (en) 2021-02-25 2024-11-26 Ebara Corporation Plating apparatus and air bubble removing method of plating apparatus
JP7732126B1 (ja) * 2024-07-04 2025-09-01 株式会社荏原製作所 めっき装置

Also Published As

Publication number Publication date
KR20040017306A (ko) 2004-02-26
CN1533586A (zh) 2004-09-29
CN1280872C (zh) 2006-10-18
WO2003009343A3 (en) 2003-05-30
TW554396B (en) 2003-09-21
WO2003009343A2 (en) 2003-01-30
US20040237896A1 (en) 2004-12-02

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