KR20040017306A - 도금장치 - Google Patents

도금장치 Download PDF

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Publication number
KR20040017306A
KR20040017306A KR10-2004-7000624A KR20047000624A KR20040017306A KR 20040017306 A KR20040017306 A KR 20040017306A KR 20047000624 A KR20047000624 A KR 20047000624A KR 20040017306 A KR20040017306 A KR 20040017306A
Authority
KR
South Korea
Prior art keywords
plating
substrate
unit
semiconductor substrate
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7000624A
Other languages
English (en)
Korean (ko)
Inventor
홍고아키히사
Original Assignee
가부시키 가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키 가이샤 에바라 세이사꾸쇼 filed Critical 가부시키 가이샤 에바라 세이사꾸쇼
Publication of KR20040017306A publication Critical patent/KR20040017306A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
KR10-2004-7000624A 2001-07-18 2002-07-17 도금장치 Ceased KR20040017306A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001218343A JP2003027280A (ja) 2001-07-18 2001-07-18 めっき装置
JPJP-P-2001-00218343 2001-07-18
PCT/JP2002/007247 WO2003009343A2 (en) 2001-07-18 2002-07-17 Plating apparatus

Publications (1)

Publication Number Publication Date
KR20040017306A true KR20040017306A (ko) 2004-02-26

Family

ID=19052532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7000624A Ceased KR20040017306A (ko) 2001-07-18 2002-07-17 도금장치

Country Status (6)

Country Link
US (1) US20040237896A1 (https=)
JP (1) JP2003027280A (https=)
KR (1) KR20040017306A (https=)
CN (1) CN1280872C (https=)
TW (1) TW554396B (https=)
WO (1) WO2003009343A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101367898B1 (ko) * 2007-05-17 2014-02-26 위순임 플라즈마 감금 장벽 및 이를 구비한 기판 처리 시스템 및방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979464B2 (ja) * 2001-12-27 2007-09-19 株式会社荏原製作所 無電解めっき前処理装置及び方法
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
TWI265216B (en) * 2003-04-18 2006-11-01 Applied Materials Inc Multi-chemistry plating system
JP4295032B2 (ja) * 2003-07-22 2009-07-15 大日本スクリーン製造株式会社 めっき装置
US7531634B2 (en) * 2004-12-03 2009-05-12 University Of Pittsburgh Bladder matrix protein peptides and methods of detection of bladder cancer
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100809594B1 (ko) 2006-09-12 2008-03-04 세메스 주식회사 척킹부재 및 이를 포함하는 스핀헤드
KR20110051588A (ko) * 2009-11-10 2011-05-18 삼성전자주식회사 기판 도금 장치 및 방법
GB201021326D0 (en) * 2010-12-16 2011-01-26 Picofluidics Ltd Electro chemical deposition apparatus
US20140220777A1 (en) * 2013-02-05 2014-08-07 International Business Machines Corporation Processing system for combined metal deposition and reflow anneal for forming interconnect structures
KR102697922B1 (ko) * 2019-01-09 2024-08-22 삼성전자주식회사 원자층 증착 장치 및 이를 이용한 박막 형성 방법
TWI748524B (zh) * 2019-09-17 2021-12-01 日商國際電氣股份有限公司 基板冷卻單元，基板處理裝置，半導體裝置的製造方法及程式
CN113097096A (zh) * 2019-12-23 2021-07-09 盛美半导体设备(上海)股份有限公司 半导体设备
US12152312B2 (en) 2021-02-25 2024-11-26 Ebara Corporation Plating apparatus and air bubble removing method of plating apparatus
JP7732126B1 (ja) * 2024-07-04 2025-09-01 株式会社荏原製作所 めっき装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
DE19544328B4 (de) * 1994-11-29 2014-03-20 Ebara Corp. Poliervorrichtung
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
WO1999045170A1 (fr) * 1998-03-02 1999-09-10 Ebara Corporation Dispositif de placage de substrat
CA2352160A1 (en) * 1998-11-28 2000-06-08 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6267853B1 (en) * 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
JP3556882B2 (ja) * 2000-05-10 2004-08-25 東京エレクトロン株式会社 塗布現像処理システム
KR100800531B1 (ko) * 2000-06-30 2008-02-04 가부시키가이샤 에바라 세이사꾸쇼 구리 도금액, 도금 방법 및 도금 장치
JP3284496B2 (ja) * 2000-08-09 2002-05-20 株式会社荏原製作所 めっき装置及びめっき液除去方法
KR100798437B1 (ko) * 2000-12-04 2008-01-28 가부시키가이샤 에바라 세이사꾸쇼 기판처리방법
JP2002212786A (ja) * 2001-01-17 2002-07-31 Ebara Corp 基板処理装置
JP2002220692A (ja) * 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
KR20020092444A (ko) * 2001-02-23 2002-12-11 가부시키 가이샤 에바라 세이사꾸쇼 구리-도금 용액, 도금 방법 및 도금 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101367898B1 (ko) * 2007-05-17 2014-02-26 위순임 플라즈마 감금 장벽 및 이를 구비한 기판 처리 시스템 및방법

Also Published As

Publication number Publication date
WO2003009343A3 (en) 2003-05-30
JP2003027280A (ja) 2003-01-29
CN1280872C (zh) 2006-10-18
CN1533586A (zh) 2004-09-29
US20040237896A1 (en) 2004-12-02
TW554396B (en) 2003-09-21
WO2003009343A2 (en) 2003-01-30

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Legal Events

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E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000