CN1280872C - 电镀装置 - Google Patents

电镀装置 Download PDF

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Publication number
CN1280872C
CN1280872C CNB028143809A CN02814380A CN1280872C CN 1280872 C CN1280872 C CN 1280872C CN B028143809 A CNB028143809 A CN B028143809A CN 02814380 A CN02814380 A CN 02814380A CN 1280872 C CN1280872 C CN 1280872C
Authority
CN
China
Prior art keywords
substrate
mentioned
electroplating
plating
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028143809A
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English (en)
Chinese (zh)
Other versions
CN1533586A (zh
Inventor
本乡明久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of CN1533586A publication Critical patent/CN1533586A/zh
Application granted granted Critical
Publication of CN1280872C publication Critical patent/CN1280872C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
CNB028143809A 2001-07-18 2002-07-17 电镀装置 Expired - Fee Related CN1280872C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001218343A JP2003027280A (ja) 2001-07-18 2001-07-18 めっき装置
JP218343/2001 2001-07-18

Publications (2)

Publication Number Publication Date
CN1533586A CN1533586A (zh) 2004-09-29
CN1280872C true CN1280872C (zh) 2006-10-18

Family

ID=19052532

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028143809A Expired - Fee Related CN1280872C (zh) 2001-07-18 2002-07-17 电镀装置

Country Status (6)

Country Link
US (1) US20040237896A1 (https=)
JP (1) JP2003027280A (https=)
KR (1) KR20040017306A (https=)
CN (1) CN1280872C (https=)
TW (1) TW554396B (https=)
WO (1) WO2003009343A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979464B2 (ja) * 2001-12-27 2007-09-19 株式会社荏原製作所 無電解めっき前処理装置及び方法
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
TWI265216B (en) * 2003-04-18 2006-11-01 Applied Materials Inc Multi-chemistry plating system
JP4295032B2 (ja) * 2003-07-22 2009-07-15 大日本スクリーン製造株式会社 めっき装置
US7531634B2 (en) * 2004-12-03 2009-05-12 University Of Pittsburgh Bladder matrix protein peptides and methods of detection of bladder cancer
JP4519037B2 (ja) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 加熱装置及び塗布、現像装置
KR100809594B1 (ko) 2006-09-12 2008-03-04 세메스 주식회사 척킹부재 및 이를 포함하는 스핀헤드
KR101367898B1 (ko) * 2007-05-17 2014-02-26 위순임 플라즈마 감금 장벽 및 이를 구비한 기판 처리 시스템 및방법
KR20110051588A (ko) * 2009-11-10 2011-05-18 삼성전자주식회사 기판 도금 장치 및 방법
GB201021326D0 (en) * 2010-12-16 2011-01-26 Picofluidics Ltd Electro chemical deposition apparatus
US20140220777A1 (en) * 2013-02-05 2014-08-07 International Business Machines Corporation Processing system for combined metal deposition and reflow anneal for forming interconnect structures
KR102697922B1 (ko) * 2019-01-09 2024-08-22 삼성전자주식회사 원자층 증착 장치 및 이를 이용한 박막 형성 방법
TWI748524B (zh) * 2019-09-17 2021-12-01 日商國際電氣股份有限公司 基板冷卻單元，基板處理裝置，半導體裝置的製造方法及程式
CN113097096A (zh) * 2019-12-23 2021-07-09 盛美半导体设备(上海)股份有限公司 半导体设备
US12152312B2 (en) 2021-02-25 2024-11-26 Ebara Corporation Plating apparatus and air bubble removing method of plating apparatus
JP7732126B1 (ja) * 2024-07-04 2025-09-01 株式会社荏原製作所 めっき装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
DE19544328B4 (de) * 1994-11-29 2014-03-20 Ebara Corp. Poliervorrichtung
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
WO1999045170A1 (fr) * 1998-03-02 1999-09-10 Ebara Corporation Dispositif de placage de substrat
CA2352160A1 (en) * 1998-11-28 2000-06-08 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6267853B1 (en) * 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
JP3556882B2 (ja) * 2000-05-10 2004-08-25 東京エレクトロン株式会社 塗布現像処理システム
KR100800531B1 (ko) * 2000-06-30 2008-02-04 가부시키가이샤 에바라 세이사꾸쇼 구리 도금액, 도금 방법 및 도금 장치
JP3284496B2 (ja) * 2000-08-09 2002-05-20 株式会社荏原製作所 めっき装置及びめっき液除去方法
KR100798437B1 (ko) * 2000-12-04 2008-01-28 가부시키가이샤 에바라 세이사꾸쇼 기판처리방법
JP2002212786A (ja) * 2001-01-17 2002-07-31 Ebara Corp 基板処理装置
JP2002220692A (ja) * 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
KR20020092444A (ko) * 2001-02-23 2002-12-11 가부시키 가이샤 에바라 세이사꾸쇼 구리-도금 용액, 도금 방법 및 도금 장치

Also Published As

Publication number Publication date
WO2003009343A3 (en) 2003-05-30
JP2003027280A (ja) 2003-01-29
CN1533586A (zh) 2004-09-29
KR20040017306A (ko) 2004-02-26
US20040237896A1 (en) 2004-12-02
TW554396B (en) 2003-09-21
WO2003009343A2 (en) 2003-01-30

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20061018

Termination date: 20210717

CF01 Termination of patent right due to non-payment of annual fee