JP2003024773A - プラズマ処理方法及び装置 - Google Patents

プラズマ処理方法及び装置

Info

Publication number
JP2003024773A
JP2003024773A JP2001219535A JP2001219535A JP2003024773A JP 2003024773 A JP2003024773 A JP 2003024773A JP 2001219535 A JP2001219535 A JP 2001219535A JP 2001219535 A JP2001219535 A JP 2001219535A JP 2003024773 A JP2003024773 A JP 2003024773A
Authority
JP
Japan
Prior art keywords
vacuum container
antenna
coil
conductors
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001219535A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003024773A5 (enExample
Inventor
Kiyohiko Takagi
清彦 高木
Akio Mihashi
章男 三橋
Naoshi Yamaguchi
直志 山口
Akihisa Okazaki
晃九 岡崎
Riyuuzou Houchin
隆三 宝珍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001219535A priority Critical patent/JP2003024773A/ja
Publication of JP2003024773A publication Critical patent/JP2003024773A/ja
Publication of JP2003024773A5 publication Critical patent/JP2003024773A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2001219535A 2001-07-19 2001-07-19 プラズマ処理方法及び装置 Pending JP2003024773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001219535A JP2003024773A (ja) 2001-07-19 2001-07-19 プラズマ処理方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001219535A JP2003024773A (ja) 2001-07-19 2001-07-19 プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
JP2003024773A true JP2003024773A (ja) 2003-01-28
JP2003024773A5 JP2003024773A5 (enExample) 2005-08-25

Family

ID=19053521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001219535A Pending JP2003024773A (ja) 2001-07-19 2001-07-19 プラズマ処理方法及び装置

Country Status (1)

Country Link
JP (1) JP2003024773A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100455819B1 (ko) * 2002-08-13 2004-11-06 어댑티브프라즈마테크놀로지 주식회사 Ａｃｐ 방식에 의한 플라즈마 생성방법
WO2006004259A1 (en) * 2004-03-25 2006-01-12 Adaptive Plasma Technology Corporation Plasma chamber having plasma source coil and method for etching the wafer using the same
WO2006031010A1 (en) * 2004-09-14 2006-03-23 Adaptive Plasma Technology Corp. Adaptively plasma source and method of processing semiconductor wafer using the same
JP2006278219A (ja) * 2005-03-30 2006-10-12 Utec:Kk Ｉｃｐ回路、プラズマ処理装置及びプラズマ処理方法
JP2010118324A (ja) * 2008-11-14 2010-05-27 Semes Co Ltd プラズマアンテナおよびこれを含むプラズマ処理装置
JP2013530487A (ja) * 2010-04-20 2013-07-25 ラム リサーチ コーポレーション プラズマ処理システムにおける誘導コイル配置のための方法及び装置
KR20140141268A (ko) * 2013-05-31 2014-12-10 (주)브이앤아이솔루션 유도 결합 플라즈마 처리 장치

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100455819B1 (ko) * 2002-08-13 2004-11-06 어댑티브프라즈마테크놀로지 주식회사 Ａｃｐ 방식에 의한 플라즈마 생성방법
WO2006004259A1 (en) * 2004-03-25 2006-01-12 Adaptive Plasma Technology Corporation Plasma chamber having plasma source coil and method for etching the wafer using the same
US7524395B2 (en) 2004-03-25 2009-04-28 Adaptive Plasma Technology Corp. Plasma chamber having plasma source coil and method for etching the wafer using the same
WO2006031010A1 (en) * 2004-09-14 2006-03-23 Adaptive Plasma Technology Corp. Adaptively plasma source and method of processing semiconductor wafer using the same
JP2006278219A (ja) * 2005-03-30 2006-10-12 Utec:Kk Ｉｃｐ回路、プラズマ処理装置及びプラズマ処理方法
JP2010118324A (ja) * 2008-11-14 2010-05-27 Semes Co Ltd プラズマアンテナおよびこれを含むプラズマ処理装置
JP2013530487A (ja) * 2010-04-20 2013-07-25 ラム リサーチ コーポレーション プラズマ処理システムにおける誘導コイル配置のための方法及び装置
KR20140141268A (ko) * 2013-05-31 2014-12-10 (주)브이앤아이솔루션 유도 결합 플라즈마 처리 장치
KR101695380B1 (ko) * 2013-05-31 2017-01-11 (주)브이앤아이솔루션 유도 결합 플라즈마 처리 장치

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