JP2003022581A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003022581A5 JP2003022581A5 JP2002163096A JP2002163096A JP2003022581A5 JP 2003022581 A5 JP2003022581 A5 JP 2003022581A5 JP 2002163096 A JP2002163096 A JP 2002163096A JP 2002163096 A JP2002163096 A JP 2002163096A JP 2003022581 A5 JP2003022581 A5 JP 2003022581A5
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- forming
- cap layer
- change layer
- data storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000013500 data storage Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 150000001875 compounds Chemical class 0.000 claims 5
- 239000005388 borosilicate glass Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910018110 Se—Te Inorganic materials 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 238000005566 electron beam evaporation Methods 0.000 claims 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- 238000001552 radio frequency sputter deposition Methods 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 238000010549 co-Evaporation Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/873,189 US6576318B2 (en) | 2001-06-05 | 2001-06-05 | Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device |
| US09/873189 | 2001-06-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003022581A JP2003022581A (ja) | 2003-01-24 |
| JP2003022581A5 true JP2003022581A5 (https=) | 2005-04-07 |
| JP4249944B2 JP4249944B2 (ja) | 2009-04-08 |
Family
ID=25361141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002163096A Expired - Fee Related JP4249944B2 (ja) | 2001-06-05 | 2002-06-04 | アトミックレゾリューション・ストレージ用の滑らかな表面の結晶性相変化層を製造する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6576318B2 (https=) |
| EP (1) | EP1265235B1 (https=) |
| JP (1) | JP4249944B2 (https=) |
| CN (1) | CN1389901A (https=) |
| DE (1) | DE60206559T2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7268794B2 (en) * | 2000-10-30 | 2007-09-11 | Yamaha Corporation | Method of printing label on optical disk, optical disk unit, and optical disk |
| US6621096B2 (en) * | 2001-05-21 | 2003-09-16 | Hewlett-Packard Develpoment Company, L.P. | Device isolation process flow for ARS system |
| US7005665B2 (en) | 2004-03-18 | 2006-02-28 | International Business Machines Corporation | Phase change memory cell on silicon-on insulator substrate |
| KR100612906B1 (ko) * | 2004-08-02 | 2006-08-14 | 삼성전자주식회사 | 상변화 기억 소자의 형성 방법 |
| TW200633193A (en) * | 2004-12-02 | 2006-09-16 | Koninkl Philips Electronics Nv | Non-volatile memory |
| KR20090013419A (ko) * | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
| CN101794581B (zh) * | 2010-03-01 | 2013-03-27 | 清华大学 | 一种硬盘设备 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5557596A (en) | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| CN100543852C (zh) * | 2000-05-11 | 2009-09-23 | 日本胜利株式会社 | 信息记录载体 |
-
2001
- 2001-06-05 US US09/873,189 patent/US6576318B2/en not_active Expired - Fee Related
-
2002
- 2002-05-31 EP EP02253864A patent/EP1265235B1/en not_active Expired - Lifetime
- 2002-05-31 DE DE60206559T patent/DE60206559T2/de not_active Expired - Lifetime
- 2002-06-04 JP JP2002163096A patent/JP4249944B2/ja not_active Expired - Fee Related
- 2002-06-05 CN CN02122444.7A patent/CN1389901A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI449170B (zh) | 相變化記憶體裝置及其製造方法 | |
| US7214632B2 (en) | Using selective deposition to form phase-change memory cells | |
| EP0674181B1 (en) | Micro mechanical component and production process thereof | |
| CN102447061B (zh) | 一种高速低功耗相变存储器的制备方法 | |
| CN108539013B (zh) | 一种用于高速低功耗相变存储器的Ge/Sb类超晶格相变薄膜材料 | |
| CN110212088B (zh) | 一种二维材料相变存储单元 | |
| JP2010258249A (ja) | 相変化メモリ装置 | |
| JP2007019449A (ja) | 調節可能な抵抗比を有する相変化メモリとその製造方法 | |
| CN115036417B (zh) | 一种低功耗相变存储器的制备方法 | |
| JP2003022581A5 (https=) | ||
| CN1933207A (zh) | 相变存储器存储单元及其制备方法 | |
| JP4249944B2 (ja) | アトミックレゾリューション・ストレージ用の滑らかな表面の結晶性相変化層を製造する方法 | |
| US20260033254A1 (en) | Hfn-ge-sb-te phase change material and low power consumption phase change memory | |
| CN103594621B (zh) | 一种相变存储单元及其制备方法 | |
| CN106159085A (zh) | 相变存储单元及其制作方法 | |
| CN101447551A (zh) | 一种相变存储器单元的结构及其实现方法 | |
| CN1808706A (zh) | 一种制备相变存储器纳米加热电极的方法 | |
| CN107369760B (zh) | 一种用于相变存储器的相变薄膜及其制备方法 | |
| CN110556475B (zh) | 一种低密度变化相变材料和相变存储器及制备方法 | |
| JP2004111928A5 (https=) | ||
| CN203721775U (zh) | 一种相变存储单元 | |
| CN110534643B (zh) | 一种提高成品率的相变存储器及制备方法 | |
| CN111244272A (zh) | 一种相变材料的干法刻蚀方法 | |
| CN115172587B (zh) | 一种相变异质结薄膜、相变存储器及其制备方法 | |
| CN112216793B (zh) | 一种选通管及其制备方法 |