DE60206559T2 - Phasenänderung einer Aufzeichnungsschicht unter einer temporären Deckschicht - Google Patents
Phasenänderung einer Aufzeichnungsschicht unter einer temporären Deckschicht Download PDFInfo
- Publication number
- DE60206559T2 DE60206559T2 DE60206559T DE60206559T DE60206559T2 DE 60206559 T2 DE60206559 T2 DE 60206559T2 DE 60206559 T DE60206559 T DE 60206559T DE 60206559 T DE60206559 T DE 60206559T DE 60206559 T2 DE60206559 T2 DE 60206559T2
- Authority
- DE
- Germany
- Prior art keywords
- phase change
- layer
- cover layer
- change layer
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008859 change Effects 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000013500 data storage Methods 0.000 claims description 8
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000010549 co-Evaporation Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 description 45
- 238000003860 storage Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 9
- 238000000137 annealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
- G11B7/24056—Light transmission layers lying on the light entrance side and being thinner than the substrate, e.g. specially adapted for Blu-ray® discs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US873189 | 2001-06-05 | ||
| US09/873,189 US6576318B2 (en) | 2001-06-05 | 2001-06-05 | Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60206559D1 DE60206559D1 (de) | 2006-02-23 |
| DE60206559T2 true DE60206559T2 (de) | 2006-07-20 |
Family
ID=25361141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60206559T Expired - Lifetime DE60206559T2 (de) | 2001-06-05 | 2002-05-31 | Phasenänderung einer Aufzeichnungsschicht unter einer temporären Deckschicht |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6576318B2 (https=) |
| EP (1) | EP1265235B1 (https=) |
| JP (1) | JP4249944B2 (https=) |
| CN (1) | CN1389901A (https=) |
| DE (1) | DE60206559T2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7268794B2 (en) * | 2000-10-30 | 2007-09-11 | Yamaha Corporation | Method of printing label on optical disk, optical disk unit, and optical disk |
| US6621096B2 (en) * | 2001-05-21 | 2003-09-16 | Hewlett-Packard Develpoment Company, L.P. | Device isolation process flow for ARS system |
| US7005665B2 (en) | 2004-03-18 | 2006-02-28 | International Business Machines Corporation | Phase change memory cell on silicon-on insulator substrate |
| KR100612906B1 (ko) * | 2004-08-02 | 2006-08-14 | 삼성전자주식회사 | 상변화 기억 소자의 형성 방법 |
| TW200633193A (en) * | 2004-12-02 | 2006-09-16 | Koninkl Philips Electronics Nv | Non-volatile memory |
| KR20090013419A (ko) * | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
| CN101794581B (zh) * | 2010-03-01 | 2013-03-27 | 清华大学 | 一种硬盘设备 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5557596A (en) | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| CN100543852C (zh) * | 2000-05-11 | 2009-09-23 | 日本胜利株式会社 | 信息记录载体 |
-
2001
- 2001-06-05 US US09/873,189 patent/US6576318B2/en not_active Expired - Fee Related
-
2002
- 2002-05-31 EP EP02253864A patent/EP1265235B1/en not_active Expired - Lifetime
- 2002-05-31 DE DE60206559T patent/DE60206559T2/de not_active Expired - Lifetime
- 2002-06-04 JP JP2002163096A patent/JP4249944B2/ja not_active Expired - Fee Related
- 2002-06-05 CN CN02122444.7A patent/CN1389901A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1265235A2 (en) | 2002-12-11 |
| US6576318B2 (en) | 2003-06-10 |
| EP1265235A3 (en) | 2003-09-17 |
| JP4249944B2 (ja) | 2009-04-08 |
| JP2003022581A (ja) | 2003-01-24 |
| US20020182363A1 (en) | 2002-12-05 |
| EP1265235B1 (en) | 2005-10-12 |
| DE60206559D1 (de) | 2006-02-23 |
| CN1389901A (zh) | 2003-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE |
|
| 8364 | No opposition during term of opposition |