JP2002535851A - 太陽電池配列 - Google Patents

太陽電池配列

Info

Publication number
JP2002535851A
JP2002535851A JP2000595387A JP2000595387A JP2002535851A JP 2002535851 A JP2002535851 A JP 2002535851A JP 2000595387 A JP2000595387 A JP 2000595387A JP 2000595387 A JP2000595387 A JP 2000595387A JP 2002535851 A JP2002535851 A JP 2002535851A
Authority
JP
Japan
Prior art keywords
solar cell
cell structure
protection diode
diode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000595387A
Other languages
English (en)
Japanese (ja)
Inventor
スティーブン ジョン テイラー
Original Assignee
マルコニ アップライド テクノロジーズ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マルコニ アップライド テクノロジーズ リミテッド filed Critical マルコニ アップライド テクノロジーズ リミテッド
Publication of JP2002535851A publication Critical patent/JP2002535851A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2000595387A 1999-01-25 2000-01-25 太陽電池配列 Withdrawn JP2002535851A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9901513.3 1999-01-25
GBGB9901513.3A GB9901513D0 (en) 1999-01-25 1999-01-25 Solar cell arrangements
PCT/GB2000/000178 WO2000044052A1 (en) 1999-01-25 2000-01-25 Solar cell arrangements

Publications (1)

Publication Number Publication Date
JP2002535851A true JP2002535851A (ja) 2002-10-22

Family

ID=10846402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000595387A Withdrawn JP2002535851A (ja) 1999-01-25 2000-01-25 太陽電池配列

Country Status (5)

Country Link
EP (1) EP1153441A1 (de)
JP (1) JP2002535851A (de)
AU (1) AU2115800A (de)
GB (2) GB9901513D0 (de)
WO (1) WO2000044052A1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110123A (ja) * 2005-10-11 2007-04-26 Emcore Corp 一体型バイパスダイオードを含む太陽電池における信頼性のある内部接続
JP2007537584A (ja) * 2004-05-12 2007-12-20 アズール・スペース・ソーラー・パワー・ゲーエムベーハー 組み込まれた保護ダイオードを有するソーラーセル
JP2016163046A (ja) * 2015-03-02 2016-09-05 アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ 太陽電池装置
KR101734077B1 (ko) * 2015-12-29 2017-05-12 (재)한국나노기술원 다중접합 태양전지 및 그 제조방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6680432B2 (en) * 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US7071407B2 (en) 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US8536445B2 (en) 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US8686282B2 (en) 2006-08-07 2014-04-01 Emcore Solar Power, Inc. Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells
US20080029151A1 (en) 2006-08-07 2008-02-07 Mcglynn Daniel Terrestrial solar power system using III-V semiconductor solar cells
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US9331228B2 (en) 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
US9806215B2 (en) 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
US10153388B1 (en) 2013-03-15 2018-12-11 Solaero Technologies Corp. Emissivity coating for space solar cell arrays
JP7059983B2 (ja) * 2019-06-13 2022-04-26 信越半導体株式会社 電子デバイス及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160181A (ja) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp アモルフアス太陽電池
EP0369666B1 (de) * 1988-11-16 1995-06-14 Mitsubishi Denki Kabushiki Kaisha Sonnenzelle
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
US5405453A (en) * 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
JPH0964397A (ja) * 1995-08-29 1997-03-07 Canon Inc 太陽電池および太陽電池モジュール
WO1999062125A1 (en) * 1998-05-28 1999-12-02 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537584A (ja) * 2004-05-12 2007-12-20 アズール・スペース・ソーラー・パワー・ゲーエムベーハー 組み込まれた保護ダイオードを有するソーラーセル
JP2007110123A (ja) * 2005-10-11 2007-04-26 Emcore Corp 一体型バイパスダイオードを含む太陽電池における信頼性のある内部接続
JP2016163046A (ja) * 2015-03-02 2016-09-05 アズール スペース ソーラー パワー ゲゼルシャフト ミット ベシュレンクテル ハフツングＡＺＵＲ ＳＰＡＣＥ Ｓｏｌａｒ Ｐｏｗｅｒ ＧｍｂＨ 太陽電池装置
KR101734077B1 (ko) * 2015-12-29 2017-05-12 (재)한국나노기술원 다중접합 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
GB2346010A (en) 2000-07-26
WO2000044052A1 (en) 2000-07-27
EP1153441A1 (de) 2001-11-14
GB0001601D0 (en) 2000-03-15
AU2115800A (en) 2000-08-07
GB9901513D0 (en) 1999-03-17

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Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20070403