JP2016163046A - 太陽電池装置 - Google Patents
太陽電池装置 Download PDFInfo
- Publication number
- JP2016163046A JP2016163046A JP2016040132A JP2016040132A JP2016163046A JP 2016163046 A JP2016163046 A JP 2016163046A JP 2016040132 A JP2016040132 A JP 2016040132A JP 2016040132 A JP2016040132 A JP 2016040132A JP 2016163046 A JP2016163046 A JP 2016163046A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- layer
- junction solar
- cell device
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 101100136519 Arabidopsis thaliana PHL1 gene Proteins 0.000 claims description 3
- -1 GaAs compound Chemical class 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】保護ダイオード構造における半導体層の数は、多接合型太陽電池における数より少ないが、保護ダイオード構造における一連の半導体層は、多接合型太陽電池のそれに対応している。保護ダイオード構造においては、上部保護ダイオードと下部保護ダイオードとが形成されており、隣接する保護ダイオード間には、トンネルダイオードが配置されている。保護ダイオード構造におけるnp接合部の数は、多接合型太陽電池におけるnp接合部の数よりも1だけ少ない。多接合型太陽電池の表面及び保護ダイオード構造の表面には、1つ以上の金属層を含んでいる接続コンタクト構造が形成されており、またこの接続コンタクト構造の下には、複数の半導体層から成る導電性のコンタクト層が形成されており、またこのコンタクト層は、トンネルダイオードを含んでいる。
【選択図】図1
Description
Claims (12)
- 多接合型太陽電池(MS)及び保護ダイオード構造(SD)を備えている太陽電池装置(SV)であって、
前記多接合型太陽電池(MS)及び前記保護ダイオード構造(SD)は、共通の裏面(RF)と、メサトレンチ(MG)によって離隔されている表面と、を有しており、
前記共通の裏面(RF)は、導電層を含んでおり、
光は前記表面を介して前記多接合型太陽電池(MS)に入射し、
前記多接合型太陽電池(MS)は、複数のセル(SC1,SC2,SC3)から成るスタックを含んでおり、前記表面の最も近くに配置されているトップセル(SC1)及び前記裏面の最も近くに配置されているボトムセル(SC3)を有しており、各セル(SC1,SC2,SC3)はnp接合部を含んでおり、隣接するセル間にはトンネルダイオード(TD)が配置されており、
前記保護ダイオード構造(SD)における半導体層の数は、前記多接合型太陽電池(MS)における半導体層の数よりも少ないが、しかしながら、前記保護ダイオード構造(SD)に残存する一連の半導体層は、前記多接合型太陽電池(MS)の一連の半導体層と一致しており、
前記保護ダイオード構造(SD)においては、少なくとも、上部保護ダイオード(D1)と、前記裏面の最も近くに配置されている下部保護ダイオード(D2)と、が形成されており、隣接する保護ダイオード(D1,D2)間には、トンネルダイオード(TD)が配置されており、
前記保護ダイオード構造(SD)におけるnp接合部の数は、少なくとも、前記多接合型太陽電池(MS)におけるnp接合部の数よりも1だけ少ない、太陽電池装置(SV)において、
前記多接合型太陽電池(MS)の表面及び前記保護ダイオード構造(SD)の表面には、1つ以上の金属層を含んでいる接続コンタクト構造(M)が形成されており、且つ、該接続コンタクト構造(M)の下には、複数の半導体層から成る導電性のコンタクト層(C,C1)が形成されており、前記複数の半導体層は、トンネルダイオード(TD)を含んでいることを特徴とする、
太陽電池装置(SV)。 - 前記接続コンタクト構造(M)と前記トンネルダイオード(TD)との間には、pドープ型半導体層(PHL,PHL1)が、前記コンタクト層(C,C1)の一部として形成されている、
請求項1に記載の太陽電池装置(SV)。 - 前記pドープ型半導体層は、化合物GaInP及び/又はGaAsを含んでいる、
請求項2に記載の太陽電池装置(SV)。 - 前記接続コンタクト構造(M)は、AuZn合金から成る層及び/又はAgの化合物から成る層及び/又はAuの化合物から成る層及び/又はZn合金から成る層を含んでいる、
請求項1乃至3のいずれか1項に記載の太陽電池装置(SV)。 - 前記トンネルダイオード(TD)は、負にドープされた少なくとも1つの層と、正にドープされた層と、から形成されており、
負のドーピングは、元素Si及び/又はTe及び/又はSeによって実現されており、及び/又は、正のドーピングは、元素C及び/又はZn及び/又はMgによって実現されており、
各層のドーパント濃度は1×1018cm-3よりも高い、
請求項1乃至4のいずれか1項に記載の太陽電池装置(SV)。 - トンネルダイオード(TD)は、前記トップセル(SC1)と前記接続コンタクト構造(M)との間に形成されており、
前記トンネルダイオード(TD)は、上下に重なって配置されており、且つ、GaAs化合物から成る少なくとも2つの層から形成されている、及び/又は、前記2つの層のうちの少なくとも1つの層は、1%から40%の間のアルミニウム含有率を有している、
請求項1乃至5のいずれか1項に記載の太陽電池装置(SV)。 - 前記多接合型太陽電池(MS)はミドルセル(SC2)を有しており、前記トップセル(SC1)はGaInPを含んでおり、前記ミドルセル(SC2)はGaAs又はGaInAsを含んでおり、前記ボトムセル(SC3)はGeを含んでいる、
請求項1乃至6のいずれか1項に記載の太陽電池装置(SV)。 - 前記多接合型太陽電池(MS)は、4つ以上のセル(SC1,SC2;SC3,SCn)を含んでいる、
請求項1乃至7のいずれか1項に記載の太陽電池装置(SV)。 - 前記保護ダイオード構造(SD)の前記接続コンタクト構造(M)は、少なくとも部分的に、正にドープされた半導体層に直接接しており、該半導体層は、化合物GaInP及び/又はAlGaAsから形成されている、及び/又は、
前記多接合型太陽電池(MS)の前記接続コンタクト構造(M)は、少なくとも部分的に、正にドープされた半導体層に直接接しており、該半導体層は化合物GaAsから形成されている、
請求項1乃至8のいずれか1項に記載の太陽電池装置(SV)。 - 前記保護ダイオード構造(SD)及び前記多接合型太陽電池(MS)の前記接続コンタクト構造(M)は同一の層列を有している、
請求項1乃至9のいずれか1項に記載の太陽電池装置(SV)。 - 前記保護ダイオード構造(SD)及び前記多接合型太陽電池(MS)は半導体ミラーを含んでおり、該半導体ミラーの層は、1E17/cm3よりも高いドーパント濃度を有している、
請求項1乃至10のいずれか1項に記載の太陽電池装置(SV)。 - 前記保護ダイオードの表面は、前記多接合型太陽電池(MS)の裏面とは導電的に接続されていない、
請求項1乃至11のいずれか1項に記載の太陽電池装置(SV)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015002513.9A DE102015002513A1 (de) | 2015-03-02 | 2015-03-02 | Solarzellenvorrichtung |
DE102015002513.9 | 2015-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016163046A true JP2016163046A (ja) | 2016-09-05 |
JP6312727B2 JP6312727B2 (ja) | 2018-04-18 |
Family
ID=55361314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016040132A Active JP6312727B2 (ja) | 2015-03-02 | 2016-03-02 | 太陽電池装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10763385B2 (ja) |
EP (1) | EP3065177B1 (ja) |
JP (1) | JP6312727B2 (ja) |
CN (1) | CN105938854B (ja) |
DE (1) | DE102015002513A1 (ja) |
RU (1) | RU2625263C1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107068786A (zh) * | 2016-12-28 | 2017-08-18 | 中国电子科技集团公司第十八研究所 | 太阳电池集成式双结二极管的结构设计及制造方法 |
EP3442036B1 (de) | 2017-08-09 | 2020-06-24 | AE 111 Autarke Energie GmbH | Optoelektronisches halbleiterbauelement |
DE102018001181B3 (de) * | 2018-02-15 | 2019-07-11 | Azur Space Solar Power Gmbh | Sonnenstandssensor |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6395679A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | GaAs太陽電池の製造方法 |
JPH0955522A (ja) * | 1995-08-10 | 1997-02-25 | Japan Energy Corp | トンネルダイオード |
JP2000340823A (ja) * | 1999-05-11 | 2000-12-08 | Angewandte Solarenergie Ase Gmbh | 太陽電池及び太陽電池の製造方法 |
JP2002517098A (ja) * | 1998-05-28 | 2002-06-11 | テクスター パワー システムズ インコーポレイテッド | バイパスダイオードを有する太陽電池 |
JP2002535851A (ja) * | 1999-01-25 | 2002-10-22 | マルコニ アップライド テクノロジーズ リミテッド | 太陽電池配列 |
US20020164834A1 (en) * | 1999-07-14 | 2002-11-07 | Boutros Karim S. | Monolithic bypass-diode and solar-cell string assembly |
US20070256730A1 (en) * | 2004-05-12 | 2007-11-08 | Gerhard Strobl | Solar Cell with Integrated Protective Diode |
US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
US8604330B1 (en) * | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4011145A1 (de) * | 1990-04-06 | 1991-10-10 | Telefunken Electronic Gmbh | Lumineszenz-halbleiterelement |
US6278054B1 (en) * | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
JP3657143B2 (ja) * | 1999-04-27 | 2005-06-08 | シャープ株式会社 | 太陽電池及びその製造方法 |
DE10056214A1 (de) * | 1999-05-11 | 2002-05-29 | Rwe Solar Gmbh | Solarzelle sowie Verfahren zur Herstellung einer solchen |
US6680432B2 (en) * | 2001-10-24 | 2004-01-20 | Emcore Corporation | Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells |
US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
DE102004055225B4 (de) | 2004-11-16 | 2014-07-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung mit Solarzelle und integrierter Bypass-Diode |
DE102007011403A1 (de) * | 2007-03-08 | 2008-09-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Frontseitig serienverschaltetes Solarmodul |
RU2366035C1 (ru) * | 2008-05-14 | 2009-08-27 | Физико-технический институт им. А.Ф. Иоффе РАН | Способ получения структуры многослойного фотоэлектрического преобразователя |
US8703521B2 (en) * | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
US8609984B2 (en) * | 2009-06-24 | 2013-12-17 | Florida State University Research Foundation, Inc. | High efficiency photovoltaic cell for solar energy harvesting |
US9337360B1 (en) * | 2009-11-16 | 2016-05-10 | Solar Junction Corporation | Non-alloyed contacts for III-V based solar cells |
DE102011115340A1 (de) * | 2011-10-07 | 2013-04-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul |
EP2947703B1 (de) * | 2014-05-21 | 2019-04-17 | AZUR SPACE Solar Power GmbH | Solarzellenstapel |
-
2015
- 2015-03-02 DE DE102015002513.9A patent/DE102015002513A1/de not_active Withdrawn
-
2016
- 2016-02-15 EP EP16000369.5A patent/EP3065177B1/de active Active
- 2016-03-01 RU RU2016107403A patent/RU2625263C1/ru active
- 2016-03-01 CN CN201610115399.7A patent/CN105938854B/zh active Active
- 2016-03-02 JP JP2016040132A patent/JP6312727B2/ja active Active
- 2016-03-02 US US15/058,751 patent/US10763385B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6395679A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | GaAs太陽電池の製造方法 |
JPH0955522A (ja) * | 1995-08-10 | 1997-02-25 | Japan Energy Corp | トンネルダイオード |
JP2002517098A (ja) * | 1998-05-28 | 2002-06-11 | テクスター パワー システムズ インコーポレイテッド | バイパスダイオードを有する太陽電池 |
JP2002535851A (ja) * | 1999-01-25 | 2002-10-22 | マルコニ アップライド テクノロジーズ リミテッド | 太陽電池配列 |
JP2000340823A (ja) * | 1999-05-11 | 2000-12-08 | Angewandte Solarenergie Ase Gmbh | 太陽電池及び太陽電池の製造方法 |
US20020164834A1 (en) * | 1999-07-14 | 2002-11-07 | Boutros Karim S. | Monolithic bypass-diode and solar-cell string assembly |
US20070256730A1 (en) * | 2004-05-12 | 2007-11-08 | Gerhard Strobl | Solar Cell with Integrated Protective Diode |
JP2007537584A (ja) * | 2004-05-12 | 2007-12-20 | アズール・スペース・ソーラー・パワー・ゲーエムベーハー | 組み込まれた保護ダイオードを有するソーラーセル |
US20080149173A1 (en) * | 2006-12-21 | 2008-06-26 | Sharps Paul R | Inverted metamorphic solar cell with bypass diode |
US8604330B1 (en) * | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
Also Published As
Publication number | Publication date |
---|---|
RU2625263C1 (ru) | 2017-07-12 |
EP3065177B1 (de) | 2022-01-26 |
CN105938854B (zh) | 2017-11-07 |
DE102015002513A1 (de) | 2016-09-08 |
US10763385B2 (en) | 2020-09-01 |
CN105938854A (zh) | 2016-09-14 |
US20160260860A1 (en) | 2016-09-08 |
EP3065177A1 (de) | 2016-09-07 |
JP6312727B2 (ja) | 2018-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9508881B2 (en) | Transparent contacts for stacked compound photovoltaic cells | |
JP6194283B2 (ja) | 多接合ソーラーセル及びその形成方法 | |
CA2565911C (en) | Solar cell with integrated protective diode | |
US7759572B2 (en) | Multijunction solar cell with a bypass diode having an intrinsic layer | |
JP5390069B2 (ja) | バイパスダイオードを有するソーラーセルのビア構造 | |
US7462889B2 (en) | Avalanche photodiode | |
US20100186804A1 (en) | String Interconnection of Inverted Metamorphic Multijunction Solar Cells on Flexible Perforated Carriers | |
US20100282305A1 (en) | Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys | |
JP2009076921A (ja) | 多接合ソーラーセル及びその製造方法 | |
JP2007110123A (ja) | 一体型バイパスダイオードを含む太陽電池における信頼性のある内部接続 | |
JP6312727B2 (ja) | 太陽電池装置 | |
JP2016092037A (ja) | 半導体積層体、受光素子およびセンサ | |
CN105261662A (zh) | 一种具有扩散结旁路二极管的太阳电池芯片 | |
US10361326B2 (en) | Advanced CPV solar cell assembly process | |
US20150034152A1 (en) | Solar cell with passivation on the window layer | |
US20170294547A1 (en) | Semiconductor layered structure, photodiode and sensor | |
KR20180129131A (ko) | 화합물 반도체 태양전지 | |
US20150034155A1 (en) | Optoelectronic device and the manufacturing method thereof | |
JP5639657B2 (ja) | 太陽電池セル | |
JP5868661B2 (ja) | バイパスダイオードおよびその製造方法 | |
US20180301580A1 (en) | Compound semiconductor solar cell | |
US20180248059A1 (en) | Compound semiconductor solar cell and method of manufacturing the same | |
US20140093995A1 (en) | Method of Hybrid Stacked Chip for a Solar Cell | |
KR20150014298A (ko) | 화합물 반도체 태양 전지 | |
KR102559479B1 (ko) | 화합물 반도체 태양전지의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161220 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20170222 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171016 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180320 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6312727 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |