EP1153441A1 - Solarzellenanordnungen - Google Patents

Solarzellenanordnungen

Info

Publication number
EP1153441A1
EP1153441A1 EP00901194A EP00901194A EP1153441A1 EP 1153441 A1 EP1153441 A1 EP 1153441A1 EP 00901194 A EP00901194 A EP 00901194A EP 00901194 A EP00901194 A EP 00901194A EP 1153441 A1 EP1153441 A1 EP 1153441A1
Authority
EP
European Patent Office
Prior art keywords
solar cell
protection diode
arrangement
cell structure
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00901194A
Other languages
English (en)
French (fr)
Inventor
Stephen John Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
Marconi Applied Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Applied Technologies Ltd filed Critical Marconi Applied Technologies Ltd
Publication of EP1153441A1 publication Critical patent/EP1153441A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • a solar cell arrangement comprises a top solar

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EP00901194A 1999-01-25 2000-01-25 Solarzellenanordnungen Withdrawn EP1153441A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9901513 1999-01-25
GBGB9901513.3A GB9901513D0 (en) 1999-01-25 1999-01-25 Solar cell arrangements
PCT/GB2000/000178 WO2000044052A1 (en) 1999-01-25 2000-01-25 Solar cell arrangements

Publications (1)

Publication Number Publication Date
EP1153441A1 true EP1153441A1 (de) 2001-11-14

Family

ID=10846402

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00901194A Withdrawn EP1153441A1 (de) 1999-01-25 2000-01-25 Solarzellenanordnungen

Country Status (5)

Country Link
EP (1) EP1153441A1 (de)
JP (1) JP2002535851A (de)
AU (1) AU2115800A (de)
GB (2) GB9901513D0 (de)
WO (1) WO2000044052A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6680432B2 (en) 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US7071407B2 (en) 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
US7732705B2 (en) * 2005-10-11 2010-06-08 Emcore Solar Power, Inc. Reliable interconnection of solar cells including integral bypass diode
US8536445B2 (en) 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US20080029151A1 (en) 2006-08-07 2008-02-07 Mcglynn Daniel Terrestrial solar power system using III-V semiconductor solar cells
US8686282B2 (en) 2006-08-07 2014-04-01 Emcore Solar Power, Inc. Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US9331228B2 (en) 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
US9806215B2 (en) 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
US10153388B1 (en) 2013-03-15 2018-12-11 Solaero Technologies Corp. Emissivity coating for space solar cell arrays
DE102015002513A1 (de) * 2015-03-02 2016-09-08 Azur Space Solar Power Gmbh Solarzellenvorrichtung
KR101734077B1 (ko) * 2015-12-29 2017-05-12 (재)한국나노기술원 다중접합 태양전지 및 그 제조방법
JP7059983B2 (ja) * 2019-06-13 2022-04-26 信越半導体株式会社 電子デバイス及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160181A (ja) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp アモルフアス太陽電池
EP0369666B1 (de) * 1988-11-16 1995-06-14 Mitsubishi Denki Kabushiki Kaisha Sonnenzelle
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
US5405453A (en) * 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
JPH0964397A (ja) * 1995-08-29 1997-03-07 Canon Inc 太陽電池および太陽電池モジュール
WO1999062125A1 (en) * 1998-05-28 1999-12-02 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0044052A1 *

Also Published As

Publication number Publication date
AU2115800A (en) 2000-08-07
GB2346010A (en) 2000-07-26
GB0001601D0 (en) 2000-03-15
WO2000044052A1 (en) 2000-07-27
JP2002535851A (ja) 2002-10-22
GB9901513D0 (en) 1999-03-17

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