JP2002535847A - 単一のエッチャ中でハードマスクおよび金属層をインサイチューエッチングする方法 - Google Patents
単一のエッチャ中でハードマスクおよび金属層をインサイチューエッチングする方法Info
- Publication number
- JP2002535847A JP2002535847A JP2000595374A JP2000595374A JP2002535847A JP 2002535847 A JP2002535847 A JP 2002535847A JP 2000595374 A JP2000595374 A JP 2000595374A JP 2000595374 A JP2000595374 A JP 2000595374A JP 2002535847 A JP2002535847 A JP 2002535847A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hard mask
- metal layer
- mask material
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 238000005530 etching Methods 0.000 title claims description 24
- 238000011065 in-situ storage Methods 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 141
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 239000000460 chlorine Substances 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 9
- 230000003667 anti-reflective effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000012937 correction Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/236,025 | 1999-01-22 | ||
| US09/236,025 US6159863A (en) | 1999-01-22 | 1999-01-22 | Insitu hardmask and metal etch in a single etcher |
| PCT/US2000/001503 WO2000044037A1 (en) | 1999-01-22 | 2000-01-21 | Method of in-situ etching a hard mask and a metal layer in a single etcher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002535847A true JP2002535847A (ja) | 2002-10-22 |
| JP2002535847A5 JP2002535847A5 (enExample) | 2007-01-18 |
Family
ID=22887811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000595374A Pending JP2002535847A (ja) | 1999-01-22 | 2000-01-21 | 単一のエッチャ中でハードマスクおよび金属層をインサイチューエッチングする方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6159863A (enExample) |
| EP (1) | EP1166344A1 (enExample) |
| JP (1) | JP2002535847A (enExample) |
| KR (1) | KR100708422B1 (enExample) |
| WO (1) | WO2000044037A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007500443A (ja) * | 2003-07-28 | 2007-01-11 | フリースケール セミコンダクター インコーポレイテッド | 有機反射防止膜（ａｒｃ）を有する半導体装置及びその方法 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6420099B1 (en) * | 1999-08-02 | 2002-07-16 | Infineon Technologies Ag | Tungsten hard mask for dry etching aluminum-containing layers |
| US6387820B1 (en) * | 2000-09-19 | 2002-05-14 | Advanced Micro Devices, Inc. | BC13/AR chemistry for metal overetching on a high density plasma etcher |
| US6656643B2 (en) | 2001-02-20 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd. | Method of extreme ultraviolet mask engineering |
| EP1235265A1 (en) * | 2001-02-23 | 2002-08-28 | Infineon Technologies AG | Method for etching a hardmask layer and a metal layer |
| US6582861B2 (en) * | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
| US6573189B1 (en) | 2001-11-07 | 2003-06-03 | Taiwan Semiconductor Manufacturing Company | Manufacture method of metal bottom ARC |
| US6861177B2 (en) * | 2002-02-21 | 2005-03-01 | Hitachi Global Storage Technologies Netherlands B.V. | Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer |
| US6815367B2 (en) | 2002-04-03 | 2004-11-09 | Infineon Technologies Ag | Elimination of resist footing on tera hardmask |
| DE10219122B4 (de) * | 2002-04-29 | 2005-01-05 | Infineon Technologies Ag | Verfahren zur Herstellung von Hartmasken |
| DE10312469A1 (de) * | 2003-03-20 | 2004-10-07 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterstruktur |
| US20040192059A1 (en) * | 2003-03-28 | 2004-09-30 | Mosel Vitelic, Inc. | Method for etching a titanium-containing layer prior to etching an aluminum layer in a metal stack |
| KR100549272B1 (ko) * | 2003-04-08 | 2006-02-03 | 동부아남반도체 주식회사 | 미세선폭을 갖는 반도체 소자의 제조 방법 |
| KR100548515B1 (ko) * | 2003-07-09 | 2006-02-02 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선의 형성 방법 |
| US7030008B2 (en) * | 2003-09-12 | 2006-04-18 | International Business Machines Corporation | Techniques for patterning features in semiconductor devices |
| KR20050034887A (ko) * | 2003-10-10 | 2005-04-15 | 삼성전자주식회사 | 전원전압 동기신호 생성 장치 및 방법 |
| US20070037100A1 (en) * | 2005-08-09 | 2007-02-15 | International Business Machines Corporation | High aspect ratio mask open without hardmask |
| US7972957B2 (en) * | 2006-02-27 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company | Method of making openings in a layer of a semiconductor device |
| US7435681B2 (en) * | 2006-05-09 | 2008-10-14 | Macronix International Co., Ltd. | Methods of etching stacks having metal layers and hard mask layers |
| KR100785036B1 (ko) * | 2006-12-12 | 2007-12-11 | 삼성전자주식회사 | 전기장 쉴드를 구비한 전기장 센서의 제조방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03156927A (ja) * | 1989-10-24 | 1991-07-04 | Hewlett Packard Co <Hp> | アルミ・メタライゼーションのパターン形成方法 |
| TW290717B (en) * | 1994-10-28 | 1996-11-11 | Advanced Micro Devices Inc | Method to prevent formation of defects during multilayer interconnect processing |
| JPH0982687A (ja) * | 1995-09-19 | 1997-03-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5772906A (en) * | 1996-05-30 | 1998-06-30 | Lam Research Corporation | Mechanism for uniform etching by minimizing effects of etch rate loading |
| US5772903A (en) * | 1996-09-27 | 1998-06-30 | Hirsch; Gregory | Tapered capillary optics |
| US5851926A (en) * | 1996-10-01 | 1998-12-22 | Applied Materials, Inc | Method for etching transistor gates using a hardmask |
| US6013582A (en) * | 1997-12-08 | 2000-01-11 | Applied Materials, Inc. | Method for etching silicon oxynitride and inorganic antireflection coatings |
| US5981398A (en) * | 1998-04-10 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask method for forming chlorine containing plasma etched layer |
| US6017826A (en) * | 1998-10-05 | 2000-01-25 | Chartered Semiconductor Manufacturing, Ltd. | Chlorine containing plasma etch method with enhanced sidewall passivation and attenuated microloading effect |
-
1999
- 1999-01-22 US US09/236,025 patent/US6159863A/en not_active Expired - Lifetime
-
2000
- 2000-01-21 WO PCT/US2000/001503 patent/WO2000044037A1/en not_active Ceased
- 2000-01-21 JP JP2000595374A patent/JP2002535847A/ja active Pending
- 2000-01-21 KR KR1020017009245A patent/KR100708422B1/ko not_active Expired - Fee Related
- 2000-01-21 EP EP00911608A patent/EP1166344A1/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007500443A (ja) * | 2003-07-28 | 2007-01-11 | フリースケール セミコンダクター インコーポレイテッド | 有機反射防止膜（ａｒｃ）を有する半導体装置及びその方法 |
| US8039389B2 (en) | 2003-07-28 | 2011-10-18 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000044037A1 (en) | 2000-07-27 |
| KR100708422B1 (ko) | 2007-04-18 |
| EP1166344A1 (en) | 2002-01-02 |
| US6159863A (en) | 2000-12-12 |
| KR20010101641A (ko) | 2001-11-14 |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
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| A621 | Written request for application examination |
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| A977 | Report on retrieval |
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