JP2002518913A5 - - Google Patents

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Publication number
JP2002518913A5
JP2002518913A5 JP2000554170A JP2000554170A JP2002518913A5 JP 2002518913 A5 JP2002518913 A5 JP 2002518913A5 JP 2000554170 A JP2000554170 A JP 2000554170A JP 2000554170 A JP2000554170 A JP 2000554170A JP 2002518913 A5 JP2002518913 A5 JP 2002518913A5
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JP
Japan
Prior art keywords
diaphragm
tension
substrate
thickness
transition temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000554170A
Other languages
English (en)
Japanese (ja)
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JP4233218B2 (ja
JP2002518913A (ja
Filing date
Publication date
Priority claimed from DK199800791A external-priority patent/DK79198A/da
Application filed filed Critical
Publication of JP2002518913A publication Critical patent/JP2002518913A/ja
Publication of JP2002518913A5 publication Critical patent/JP2002518913A5/ja
Application granted granted Critical
Publication of JP4233218B2 publication Critical patent/JP4233218B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000554170A 1998-06-11 1999-06-10 所定張力を持つダイアフラムを有するトランスデューサを製造する方法 Expired - Lifetime JP4233218B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DK199800791 1998-06-11
DK199800791A DK79198A (da) 1998-06-11 1998-06-11 Fremgangsmåde til fremstilling af en transducer med en membran med en forudbestemt opspændingskraft
PCT/DK1999/000315 WO1999065277A1 (en) 1998-06-11 1999-06-10 A method of manufacturing a transducer having a diaphragm with a predetermined tension

Publications (3)

Publication Number Publication Date
JP2002518913A JP2002518913A (ja) 2002-06-25
JP2002518913A5 true JP2002518913A5 (https=) 2006-07-06
JP4233218B2 JP4233218B2 (ja) 2009-03-04

Family

ID=8097602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000554170A Expired - Lifetime JP4233218B2 (ja) 1998-06-11 1999-06-10 所定張力を持つダイアフラムを有するトランスデューサを製造する方法

Country Status (9)

Country Link
US (1) US6622368B1 (https=)
EP (1) EP1093703B1 (https=)
JP (1) JP4233218B2 (https=)
CN (1) CN1162043C (https=)
AU (1) AU4133999A (https=)
CA (1) CA2334640C (https=)
DE (1) DE69926757T2 (https=)
DK (2) DK79198A (https=)
WO (1) WO1999065277A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK79198A (da) * 1998-06-11 1999-12-12 Microtronic As Fremgangsmåde til fremstilling af en transducer med en membran med en forudbestemt opspændingskraft
US6760454B1 (en) * 2000-08-04 2004-07-06 Trw Inc. Passive voice-activated microphone and transceiver system
US6741709B2 (en) * 2000-12-20 2004-05-25 Shure Incorporated Condenser microphone assembly
US6800912B2 (en) * 2001-05-18 2004-10-05 Corporation For National Research Initiatives Integrated electromechanical switch and tunable capacitor and method of making the same
US6859542B2 (en) 2001-05-31 2005-02-22 Sonion Lyngby A/S Method of providing a hydrophobic layer and a condenser microphone having such a layer
KR101059364B1 (ko) * 2003-11-20 2011-08-24 파나소닉 주식회사 일렉트릿 및 일렉트릿 컨덴서
JP4264103B2 (ja) 2004-03-03 2009-05-13 パナソニック株式会社 エレクトレットコンデンサーマイクロホン
EP1722595A4 (en) * 2004-03-05 2010-07-28 Panasonic Corp ELECTRET condenser
JP2006319595A (ja) * 2005-05-12 2006-11-24 Audio Technica Corp リボンマイクロホンの製造方法
JP2007116650A (ja) * 2005-09-26 2007-05-10 Yamaha Corp ダイヤフラム及びダイヤフラムの製造方法並びにコンデンサマイクロホン
EP1771036A3 (en) * 2005-09-26 2013-05-22 Yamaha Corporation Capacitor microphone and diaphragm therefor
JP4535046B2 (ja) 2006-08-22 2010-09-01 ヤマハ株式会社 静電容量センサ及びその製造方法
DE102005056759A1 (de) * 2005-11-29 2007-05-31 Robert Bosch Gmbh Mikromechanische Struktur zum Empfang und/oder zur Erzeugung von akustischen Signalen, Verfahren zur Herstellung einer mikromechanischen Struktur und Verwendung einer mikromechanischen Struktur
JP4787648B2 (ja) 2006-03-29 2011-10-05 パナソニック株式会社 コンデンサマイクロホンの製造方法およびコンデンサマイクロホン
JP4660426B2 (ja) * 2006-05-31 2011-03-30 三洋電機株式会社 センサ装置およびダイアフラム構造体
US8121315B2 (en) * 2007-03-21 2012-02-21 Goer Tek Inc. Condenser microphone chip
FR2922305B1 (fr) * 2007-10-12 2010-02-26 Senseor Procede de fabrication collective de capteurs de temperature et de pression sans calibrage a base de dispositifs a ondes acoustiques
IT1395550B1 (it) 2008-12-23 2012-09-28 St Microelectronics Rousset Trasduttore acustico integrato in tecnologia mems e relativo processo di fabbricazione
WO2010079574A1 (ja) * 2009-01-09 2010-07-15 パナソニック株式会社 Ｍｅｍｓデバイス
JP5321111B2 (ja) * 2009-02-13 2013-10-23 船井電機株式会社 マイクロホンユニット
EP2679024B1 (en) * 2011-02-25 2020-01-08 Nokia Technologies Oy A transducer apparatus with a tension actuator
TWI430424B (zh) * 2011-03-18 2014-03-11 Pixart Imaging Inc 微機電系統聲壓感測元件及其製作方法
JP5875244B2 (ja) * 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
DE102013108464B4 (de) * 2013-08-06 2020-06-25 Tdk Corporation Verfahren zur Herstellung eines mikroelektromechanischen Wandlers
JP2020022038A (ja) * 2018-07-31 2020-02-06 Tdk株式会社 Ｍｅｍｓマイクロフォン
WO2020112615A1 (en) * 2018-12-01 2020-06-04 Knowles Electronics, Llc Composite diaphragms having balanced stress

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JPS5019183B1 (https=) * 1970-03-10 1975-07-04
JPS5121334B2 (https=) * 1971-08-27 1976-07-01
JPS5650408B2 (https=) * 1973-07-05 1981-11-28
US3978731A (en) * 1974-02-25 1976-09-07 United Technologies Corporation Surface acoustic wave transducer
US4429192A (en) * 1981-11-20 1984-01-31 Bell Telephone Laboratories, Incorporated Electret transducer with variable electret foil thickness
US4524247A (en) * 1983-07-07 1985-06-18 At&T Bell Laboratories Integrated electroacoustic transducer with built-in bias
US4764690A (en) * 1986-06-18 1988-08-16 Lectret S.A. Electret transducing
US4872945A (en) * 1986-06-25 1989-10-10 Motorola Inc. Post seal etching of transducer diaphragm
NL8702589A (nl) * 1987-10-30 1989-05-16 Microtel Bv Elektro-akoestische transducent van de als elektreet aangeduide soort, en een werkwijze voor het vervaardigen van een dergelijke transducent.
US5177579A (en) * 1989-04-07 1993-01-05 Ic Sensors, Inc. Semiconductor transducer or actuator utilizing corrugated supports
US5170283A (en) * 1991-07-24 1992-12-08 Northrop Corporation Silicon spatial light modulator
JP3379106B2 (ja) * 1992-04-23 2003-02-17 セイコーエプソン株式会社 液体噴射ヘッド
FR2697675B1 (fr) * 1992-11-05 1995-01-06 Suisse Electronique Microtech Procédé de fabrication de transducteurs capacitifs intégrés.
US6030851A (en) * 1995-06-07 2000-02-29 Grandmont; Paul E. Method for overpressure protected pressure sensor
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process
EP0981823A1 (en) * 1996-04-18 2000-03-01 California Institute Of Technology Thin film electret microphone
US6556417B2 (en) * 1998-03-10 2003-04-29 Mcintosh Robert B. Method to construct variable-area capacitive transducers
DK79198A (da) * 1998-06-11 1999-12-12 Microtronic As Fremgangsmåde til fremstilling af en transducer med en membran med en forudbestemt opspændingskraft
US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system

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