JP2002283297A5 - - Google Patents

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Publication number
JP2002283297A5
JP2002283297A5 JP2001360362A JP2001360362A JP2002283297A5 JP 2002283297 A5 JP2002283297 A5 JP 2002283297A5 JP 2001360362 A JP2001360362 A JP 2001360362A JP 2001360362 A JP2001360362 A JP 2001360362A JP 2002283297 A5 JP2002283297 A5 JP 2002283297A5
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JP
Japan
Prior art keywords
layer
single crystal
crystal silicon
silicon layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001360362A
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English (en)
Japanese (ja)
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JP3986048B2 (ja
JP2002283297A (ja
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Publication date
Priority claimed from US09/724,515 external-priority patent/US6506620B1/en
Application filed filed Critical
Publication of JP2002283297A publication Critical patent/JP2002283297A/ja
Publication of JP2002283297A5 publication Critical patent/JP2002283297A5/ja
Application granted granted Critical
Publication of JP3986048B2 publication Critical patent/JP3986048B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001360362A 2000-11-27 2001-11-27 裏面に金属被覆を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法 Expired - Fee Related JP3986048B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/724,515 US6506620B1 (en) 2000-11-27 2000-11-27 Process for manufacturing micromechanical and microoptomechanical structures with backside metalization
US09/724,515 2000-11-27

Publications (3)

Publication Number Publication Date
JP2002283297A JP2002283297A (ja) 2002-10-03
JP2002283297A5 true JP2002283297A5 (https=) 2004-11-11
JP3986048B2 JP3986048B2 (ja) 2007-10-03

Family

ID=24910722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001360362A Expired - Fee Related JP3986048B2 (ja) 2000-11-27 2001-11-27 裏面に金属被覆を備える、マイクロメカニカルおよびマイクロオプトメカニカルな構造物を製造するための方法

Country Status (4)

Country Link
US (2) US6506620B1 (https=)
EP (1) EP1211219B1 (https=)
JP (1) JP3986048B2 (https=)
DE (1) DE60128437T2 (https=)

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US6660564B2 (en) * 2002-01-25 2003-12-09 Sony Corporation Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby
US7763947B2 (en) * 2002-04-23 2010-07-27 Sharp Laboratories Of America, Inc. Piezo-diode cantilever MEMS
US6680240B1 (en) * 2002-06-25 2004-01-20 Advanced Micro Devices, Inc. Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
JP4427989B2 (ja) * 2003-07-22 2010-03-10 富士ゼロックス株式会社 微小構造体の製造方法
US7067355B2 (en) * 2004-05-26 2006-06-27 Hewlett-Packard Development Company, L.P. Package having bond-sealed underbump
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US9164051B2 (en) 2005-04-06 2015-10-20 Bioscale, Inc. Electrically responsive device
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US7611908B2 (en) * 2005-05-02 2009-11-03 Bioscale, Inc. Method and apparatus for therapeutic drug monitoring using an acoustic device
US7300631B2 (en) 2005-05-02 2007-11-27 Bioscale, Inc. Method and apparatus for detection of analyte using a flexural plate wave device and magnetic particles
US7648844B2 (en) * 2005-05-02 2010-01-19 Bioscale, Inc. Method and apparatus for detection of analyte using an acoustic device
US7749445B2 (en) * 2005-05-02 2010-07-06 Bioscale, Inc. Method and apparatus for analyzing bioprocess fluids
WO2007127107A2 (en) * 2006-04-21 2007-11-08 Bioscale, Inc. Microfabricated devices and method for fabricating microfabricated devices
US7999440B2 (en) * 2006-11-27 2011-08-16 Bioscale, Inc. Micro-fabricated devices having a suspended membrane or plate structure
US20080121042A1 (en) * 2006-11-27 2008-05-29 Bioscale, Inc. Fluid paths in etchable materials
US7851333B2 (en) * 2007-03-15 2010-12-14 Infineon Technologies Ag Apparatus comprising a device and method for producing it
WO2009033056A1 (en) * 2007-09-06 2009-03-12 Bioscale, Inc. Reusable detection surfaces and methods of using same
US20090088618A1 (en) 2007-10-01 2009-04-02 Arneson Michael R System and Method for Manufacturing a Swallowable Sensor Device
EP2060534A1 (fr) * 2007-11-16 2009-05-20 Nivarox-FAR S.A. Pièce de micromécanique composite silicium - métal et son procédé de fabrication
US8242591B2 (en) 2009-08-13 2012-08-14 International Business Machines Corporation Electrostatic chucking of an insulator handle substrate
US20130115754A1 (en) * 2011-11-07 2013-05-09 Jing Chen Micro machining method for a substrate on an underlay
US8765582B2 (en) * 2012-09-04 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for extreme ultraviolet electrostatic chuck with reduced clamp effect
US9564357B2 (en) * 2014-01-24 2017-02-07 Taiwan Semiconductor Manufacturing Company Limited Method of forming semiconductor device using etch stop layer
WO2021173191A1 (en) * 2020-02-24 2021-09-02 Purdue Research Foundation Microstructurally engineered perovskite gas sensor

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