JP2001507885A - ゼロtcf薄膜共振子 - Google Patents
ゼロtcf薄膜共振子Info
- Publication number
- JP2001507885A JP2001507885A JP52999298A JP52999298A JP2001507885A JP 2001507885 A JP2001507885 A JP 2001507885A JP 52999298 A JP52999298 A JP 52999298A JP 52999298 A JP52999298 A JP 52999298A JP 2001507885 A JP2001507885 A JP 2001507885A
- Authority
- JP
- Japan
- Prior art keywords
- film
- microbeam
- temperature
- thin film
- zero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000010408 film Substances 0.000 claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 239000002131 composite material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 230000009977 dual effect Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 15
- 239000010453 quartz Substances 0.000 description 7
- 230000035882 stress Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002277 temperature effect Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2473—Double-Ended Tuning Fork [DETF] resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.第1の材料からなる第1の膜と、 前記第1の膜の上に形成された第2の材料からなる第2の膜と を含む薄膜マイクロビーム。 2.第1の材料が第1の熱膨張係数を有し、 第2の材料が第2の熱膨張係数を有し、 第1および第2の膜の相対寸法が、前記マイクロビームの共振周波数が温度に よって実際に変化しないものである請求項1に記載の薄膜マイクロビーム。 3.前記マイクロビームが少なくとも一方の端をある場所に固定され、前記マイ クロビームがその場所に関連する共振周波数で振動できる請求項2に記載の薄膜 マイクロビーム。 4.第1の材料がポリシリコンであり、 第2の材料が窒化シリコンおよび酸化シリコンのグループに属する請求項3に 記載の薄膜マイクロビーム。 5.第1の材料を備えた第1の薄膜と、 前記第1の薄膜上に形成された第2の材料を備えた第2の薄膜と、 前記第2の薄膜上に形成された第1の材料を備えた第3の薄膜と を含む薄膜マイクロビーム。 6.第1の材料が第1の熱膨張係数を有し、 第2の材料が第2の熱膨張係数を有し、 第1および第2の熱膨張係数が異なる値であり、 第1、第2、および第3の膜の幾何構造および寸法が、異なる熱膨張係数を有 する薄膜の組み合わせの結果、複合熱膨張係数を有するマイクロビームが得られ 、ビームがマイクロビームの温度変化によって変動しない共振周波数を有するも のである請求項5に記載の薄膜マイクロビーム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/777,652 US6557419B1 (en) | 1996-12-31 | 1996-12-31 | Zero TCF thin film resonator |
US08/777,652 | 1996-12-31 | ||
PCT/US1997/020639 WO1998029943A1 (en) | 1996-12-31 | 1997-11-13 | Zero tcf thin film resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001507885A true JP2001507885A (ja) | 2001-06-12 |
Family
ID=25110858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52999298A Ceased JP2001507885A (ja) | 1996-12-31 | 1997-11-13 | ゼロtcf薄膜共振子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6557419B1 (ja) |
EP (1) | EP0950282B1 (ja) |
JP (1) | JP2001507885A (ja) |
CA (1) | CA2270070C (ja) |
DE (1) | DE69705430T2 (ja) |
WO (1) | WO1998029943A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006524020A (ja) * | 2003-04-16 | 2006-10-19 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | シリコンmems共振器のための温度補償 |
JP2007013447A (ja) * | 2005-06-29 | 2007-01-18 | Sony Corp | 微小共振器、バンドパスフィルタ、半導体装置、並びに通信装置 |
JP2009055294A (ja) * | 2007-08-27 | 2009-03-12 | Seiko Instruments Inc | 発振子、発振子の製造方法、及び発振器 |
JP2013506334A (ja) * | 2009-09-28 | 2013-02-21 | テクノロギアン トゥトキムスケスクス ヴェーテーテー | マイクロメカニカル共振器 |
JP2014519260A (ja) * | 2011-05-13 | 2014-08-07 | テクノロジアン テュトキムスケスクス ヴェーテーテー | 微小機械素子及びその設計方法 |
Families Citing this family (47)
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US6672759B2 (en) * | 1997-07-11 | 2004-01-06 | International Business Machines Corporation | Method for accounting for clamp expansion in a coefficient of thermal expansion measurement |
US6445106B1 (en) | 2000-02-18 | 2002-09-03 | Intel Corporation | Micro-electromechanical structure resonator, method of making, and method of using |
JP4168757B2 (ja) * | 2002-02-01 | 2008-10-22 | 松下電器産業株式会社 | フィルタ |
WO2004086027A2 (en) * | 2003-03-21 | 2004-10-07 | Symyx Technologies, Inc. | Mechanical resonator |
US7499604B1 (en) | 2004-12-12 | 2009-03-03 | Burns David W | Optically coupled resonant pressure sensor and process |
US7176048B1 (en) | 2004-12-12 | 2007-02-13 | Burns David W | Optically coupled sealed-cavity resonator and process |
US7379629B1 (en) | 2004-12-12 | 2008-05-27 | Burns David W | Optically coupled resonant pressure sensor |
US7605391B2 (en) * | 2004-12-12 | 2009-10-20 | Burns David W | Optically coupled resonator |
US7443509B1 (en) | 2004-12-12 | 2008-10-28 | Burns David W | Optical and electronic interface for optically coupled resonators |
JP2006228776A (ja) * | 2005-02-15 | 2006-08-31 | Advantest Corp | 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法 |
US7042230B1 (en) | 2005-02-28 | 2006-05-09 | Alain Izadnegahdar | Multi-parameter sensing system |
WO2007072409A2 (en) * | 2005-12-23 | 2007-06-28 | Nxp B.V. | A mems resonator, a method of manufacturing thereof, and a mems oscillator |
US7443258B2 (en) * | 2006-04-06 | 2008-10-28 | Sitime Corporation | Oscillator system having a plurality of microelectromechanical resonators and method of designing, controlling or operating same |
US7824098B2 (en) * | 2006-06-02 | 2010-11-02 | The Board Of Trustees Of The Leland Stanford Junior University | Composite mechanical transducers and approaches therefor |
US7806586B2 (en) * | 2006-06-02 | 2010-10-05 | The Board Of Trustees Of The Leland Stanford Junior University | Composite mechanical transducers and approaches therefor |
US7446619B2 (en) * | 2006-06-14 | 2008-11-04 | Sitime Corporation | Temperature measurement system having a plurality of microelectromechanical resonators and method of operating same |
CH700716B1 (fr) | 2006-10-09 | 2010-10-15 | Suisse Electronique Microtech | Résonateur en silicium de type diapason. |
US7591201B1 (en) | 2007-03-09 | 2009-09-22 | Silicon Clocks, Inc. | MEMS structure having a compensated resonating member |
US7639104B1 (en) * | 2007-03-09 | 2009-12-29 | Silicon Clocks, Inc. | Method for temperature compensation in MEMS resonators with isolated regions of distinct material |
US7956517B1 (en) | 2007-05-10 | 2011-06-07 | Silicon Laboratories | MEMS structure having a stress inverter temperature-compensated resonator member |
US20080290494A1 (en) * | 2007-05-21 | 2008-11-27 | Markus Lutz | Backside release and/or encapsulation of microelectromechanical structures and method of manufacturing same |
US20090160581A1 (en) * | 2007-12-21 | 2009-06-25 | Paul Merritt Hagelin | Temperature Stable MEMS Resonator |
US7990229B2 (en) | 2008-04-01 | 2011-08-02 | Sand9, Inc. | Methods and devices for compensating a signal using resonators |
US8410868B2 (en) | 2009-06-04 | 2013-04-02 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
US8044737B2 (en) * | 2008-04-29 | 2011-10-25 | Sand9, Inc. | Timing oscillators and related methods |
US8476809B2 (en) | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
US8044736B2 (en) * | 2008-04-29 | 2011-10-25 | Sand9, Inc. | Timing oscillators and related methods |
US8174352B2 (en) * | 2008-06-26 | 2012-05-08 | Cornell University | Method for making a transducer, transducer made therefrom, and applications thereof |
US8111108B2 (en) | 2008-07-29 | 2012-02-07 | Sand9, Inc. | Micromechanical resonating devices and related methods |
US7999635B1 (en) | 2008-07-29 | 2011-08-16 | Silicon Laboratories Inc. | Out-of plane MEMS resonator with static out-of-plane deflection |
US7944124B1 (en) | 2008-08-29 | 2011-05-17 | Silicon Laboratories Inc. | MEMS structure having a stress-inducer temperature-compensated resonator member |
US7888843B2 (en) * | 2008-09-10 | 2011-02-15 | Georgia Tech Research Corporation | Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein |
US7939990B2 (en) * | 2009-01-30 | 2011-05-10 | Integrated Device Technology, Inc. | Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations |
US9048811B2 (en) | 2009-03-31 | 2015-06-02 | Sand 9, Inc. | Integration of piezoelectric materials with substrates |
FR2946478A1 (fr) * | 2009-06-08 | 2010-12-10 | St Microelectronics Sa | Resonateur a ondes de volume. |
JP2012531097A (ja) * | 2009-06-19 | 2012-12-06 | ジョージア・テック・リサーチ・コーポレイション | 受動温度補償を提供する高密度トレンチアレイを有するマイクロメカニカル共振器を形成する方法 |
US8106724B1 (en) | 2009-07-23 | 2012-01-31 | Integrated Device Technologies, Inc. | Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor |
EP2302792B1 (en) * | 2009-09-22 | 2012-11-14 | Nxp B.V. | Resonator |
EP2339748B1 (en) * | 2009-09-28 | 2018-12-19 | Nxp B.V. | Resonator |
US8501515B1 (en) | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
US8471641B2 (en) | 2011-06-30 | 2013-06-25 | Silicon Laboratories Inc. | Switchable electrode for power handling |
US9431993B1 (en) * | 2011-09-26 | 2016-08-30 | Micrel, Incorporated | Temperature compensated resonator with a pair of spaced apart internal dielectric layers |
US8878633B1 (en) * | 2011-09-27 | 2014-11-04 | Micrel, Incorporated | Vertical differential resonator |
US8610336B1 (en) | 2011-09-30 | 2013-12-17 | Integrated Device Technology Inc | Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies |
GB201121660D0 (en) | 2011-12-15 | 2012-01-25 | Cambridge Entpr Ltd | Measurement method using a sensor, sensor system and sensor |
FR3031639B1 (fr) * | 2015-01-14 | 2018-03-09 | Tronic's Microsystems | Transducteur electromecanique integrant un element deformable de type resonateur ou membrane, et capteur de mesure integrant un tel transducteur |
EP4423005A1 (en) * | 2021-10-26 | 2024-09-04 | Stathera IP Holdings Inc. | Microelectromechanical devices for higher order passive temperature compensation and methods of designing thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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SU746218A1 (ru) * | 1978-03-06 | 1980-07-07 | Уфимский авиационный институт им. Орджоникидзе | Способ механической компенсации температурной зависимости чувствительности интегральных датчиков малых давлений |
US5656846A (en) * | 1991-06-18 | 1997-08-12 | Nec Corporation | Semiconductor acceleration sensor and method of fabrication thereof |
US5707746A (en) * | 1992-09-25 | 1998-01-13 | Sharp Kabushiki Kaisha | Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer |
US5511427A (en) * | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
US5936159A (en) * | 1994-03-09 | 1999-08-10 | Nippondenso Co., Ltd. | Semiconductor sensor having multi-layer movable beam structure film |
US5914507A (en) * | 1994-05-11 | 1999-06-22 | Regents Of The University Of Minnesota | PZT microdevice |
JP3129120B2 (ja) * | 1994-10-04 | 2001-01-29 | 株式会社村田製作所 | 加速度センサ |
JP3586031B2 (ja) * | 1996-03-27 | 2004-11-10 | 株式会社東芝 | サセプタおよび熱処理装置および熱処理方法 |
-
1996
- 1996-12-31 US US08/777,652 patent/US6557419B1/en not_active Expired - Fee Related
-
1997
- 1997-11-13 EP EP97947478A patent/EP0950282B1/en not_active Expired - Lifetime
- 1997-11-13 WO PCT/US1997/020639 patent/WO1998029943A1/en active IP Right Grant
- 1997-11-13 CA CA002270070A patent/CA2270070C/en not_active Expired - Fee Related
- 1997-11-13 DE DE69705430T patent/DE69705430T2/de not_active Expired - Fee Related
- 1997-11-13 JP JP52999298A patent/JP2001507885A/ja not_active Ceased
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006524020A (ja) * | 2003-04-16 | 2006-10-19 | ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | シリコンmems共振器のための温度補償 |
JP2007013447A (ja) * | 2005-06-29 | 2007-01-18 | Sony Corp | 微小共振器、バンドパスフィルタ、半導体装置、並びに通信装置 |
JP4710435B2 (ja) * | 2005-06-29 | 2011-06-29 | ソニー株式会社 | 微小共振器、バンドパスフィルタ、半導体装置、並びに通信装置 |
JP2009055294A (ja) * | 2007-08-27 | 2009-03-12 | Seiko Instruments Inc | 発振子、発振子の製造方法、及び発振器 |
JP2013506334A (ja) * | 2009-09-28 | 2013-02-21 | テクノロギアン トゥトキムスケスクス ヴェーテーテー | マイクロメカニカル共振器 |
JP2014519260A (ja) * | 2011-05-13 | 2014-08-07 | テクノロジアン テュトキムスケスクス ヴェーテーテー | 微小機械素子及びその設計方法 |
Also Published As
Publication number | Publication date |
---|---|
CA2270070C (en) | 2006-07-04 |
DE69705430T2 (de) | 2002-05-02 |
DE69705430D1 (de) | 2001-08-02 |
WO1998029943A1 (en) | 1998-07-09 |
US6557419B1 (en) | 2003-05-06 |
EP0950282A1 (en) | 1999-10-20 |
EP0950282B1 (en) | 2001-06-27 |
CA2270070A1 (en) | 1998-07-09 |
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