JP2002510861A5 - - Google Patents

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Publication number
JP2002510861A5
JP2002510861A5 JP2000541729A JP2000541729A JP2002510861A5 JP 2002510861 A5 JP2002510861 A5 JP 2002510861A5 JP 2000541729 A JP2000541729 A JP 2000541729A JP 2000541729 A JP2000541729 A JP 2000541729A JP 2002510861 A5 JP2002510861 A5 JP 2002510861A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000541729A
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Japanese (ja)
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JP4708563B2 (ja
JP2002510861A (ja
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Publication date
Priority claimed from US09/050,730 external-priority patent/US5970353A/en
Application filed filed Critical
Publication of JP2002510861A publication Critical patent/JP2002510861A/ja
Publication of JP2002510861A5 publication Critical patent/JP2002510861A5/ja
Application granted granted Critical
Publication of JP4708563B2 publication Critical patent/JP4708563B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000541729A 1998-03-30 1998-11-24 薄くドープされたドレイントランジスタの有効なチャネル長さを減じる方法およびトランジスタを形成する方法 Expired - Fee Related JP4708563B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/050,730 1998-03-30
US09/050,730 US5970353A (en) 1998-03-30 1998-03-30 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion
PCT/US1998/024907 WO1999050900A1 (en) 1998-03-30 1998-11-24 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion

Publications (3)

Publication Number Publication Date
JP2002510861A JP2002510861A (ja) 2002-04-09
JP2002510861A5 true JP2002510861A5 (https=) 2006-01-05
JP4708563B2 JP4708563B2 (ja) 2011-06-22

Family

ID=21967049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000541729A Expired - Fee Related JP4708563B2 (ja) 1998-03-30 1998-11-24 薄くドープされたドレイントランジスタの有効なチャネル長さを減じる方法およびトランジスタを形成する方法

Country Status (5)

Country Link
US (2) US5970353A (https=)
EP (1) EP1068637A1 (https=)
JP (1) JP4708563B2 (https=)
KR (1) KR100615657B1 (https=)
WO (1) WO1999050900A1 (https=)

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US10188348B2 (en) 2006-06-05 2019-01-29 Masimo Corporation Parameter upgrade system
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