JP2002506122A5 - - Google Patents

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Publication number
JP2002506122A5
JP2002506122A5 JP2000534706A JP2000534706A JP2002506122A5 JP 2002506122 A5 JP2002506122 A5 JP 2002506122A5 JP 2000534706 A JP2000534706 A JP 2000534706A JP 2000534706 A JP2000534706 A JP 2000534706A JP 2002506122 A5 JP2002506122 A5 JP 2002506122A5
Authority
JP
Japan
Prior art keywords
etching
electrode
etching material
etchant
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000534706A
Other languages
English (en)
Japanese (ja)
Other versions
JP4498601B2 (ja
JP2002506122A (ja
Filing date
Publication date
Priority claimed from SE9800706A external-priority patent/SE513901C2/sv
Priority claimed from SE9800695A external-priority patent/SE513829C2/sv
Application filed filed Critical
Priority claimed from PCT/SE1999/000324 external-priority patent/WO1999045179A1/en
Publication of JP2002506122A publication Critical patent/JP2002506122A/ja
Publication of JP2002506122A5 publication Critical patent/JP2002506122A5/ja
Application granted granted Critical
Publication of JP4498601B2 publication Critical patent/JP4498601B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000534706A 1998-03-05 1999-03-05 エッチング方法 Expired - Fee Related JP4498601B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
SE9800706-5 1998-03-05
SE9800706A SE513901C2 (sv) 1998-03-05 1998-03-05 Sätt, elektrod och anordning för att etsa fördjupningar i ytan av ett ledande material
SE9800695-0 1998-03-05
SE9800695A SE513829C2 (sv) 1998-03-05 1998-03-05 Sätt att anisotropt etsa ett ledande material
PCT/SE1999/000324 WO1999045179A1 (en) 1998-03-05 1999-03-05 Method of etching

Publications (3)

Publication Number Publication Date
JP2002506122A JP2002506122A (ja) 2002-02-26
JP2002506122A5 true JP2002506122A5 (https=) 2009-08-27
JP4498601B2 JP4498601B2 (ja) 2010-07-07

Family

ID=26663226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000534706A Expired - Fee Related JP4498601B2 (ja) 1998-03-05 1999-03-05 エッチング方法

Country Status (5)

Country Link
US (1) US6423207B1 (https=)
EP (1) EP1060299A1 (https=)
JP (1) JP4498601B2 (https=)
AU (1) AU2864499A (https=)
WO (1) WO1999045179A1 (https=)

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DE19919903A1 (de) * 1999-04-30 2000-11-02 Nft Nano Filtertechnik Gmbh Verfahren zur Herstellung eines Filters
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
KR100827741B1 (ko) 2000-07-17 2008-05-07 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피 공정을 위한 자동 유체 분배 방법 및시스템
WO2002024977A1 (en) * 2000-09-20 2002-03-28 Obducat Aktiebolag A method for wet etching
SE517275C2 (sv) 2000-09-20 2002-05-21 Obducat Ab Sätt vid våtetsning av ett substrat
CN100365507C (zh) * 2000-10-12 2008-01-30 德克萨斯州大学系统董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
SE523309E (sv) 2001-06-15 2010-03-02 Replisaurus Technologies Ab Metod, elektrod och apparat för att skapa mikro- och nanostrukturer i ledande material genom mönstring med masterelektrod och elektrolyt
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7071088B2 (en) 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US8529738B2 (en) 2005-02-08 2013-09-10 The Trustees Of Columbia University In The City Of New York In situ plating and etching of materials covered with a surface film
US8496799B2 (en) * 2005-02-08 2013-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for in situ annealing of electro- and electroless platings during deposition
WO2006110437A1 (en) * 2005-04-08 2006-10-19 The Trustees Of Columbia University In The City Of New York Systems and methods for monitoring plating and etching baths
WO2007027907A2 (en) * 2005-09-02 2007-03-08 The Trustees Of Columbia University In The City Of New York A system and method for obtaining anisotropic etching of patterned substrates
WO2007058604A1 (en) * 2005-11-18 2007-05-24 Replisaurus Technologies Ab Master electrode and method of forming the master electrode
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
MY144847A (en) 2005-12-08 2011-11-30 Molecular Imprints Inc Method and system for double-sided patterning of substrates
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
FR2898138B1 (fr) 2006-03-03 2008-05-16 Commissariat Energie Atomique Procede de structuration electrochimique d'un materiau conducteur ou semi-conducteur, et dispositif de mise en oeuvre.
US7780893B2 (en) * 2006-04-03 2010-08-24 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7547398B2 (en) 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
WO2008070786A1 (en) * 2006-12-06 2008-06-12 The Trustees Of Columbia University In The City Of New York Microfluidic systems and methods for screening plating and etching bath compositions
US20110017608A1 (en) * 2009-07-27 2011-01-27 Faraday Technology, Inc. Electrochemical etching and polishing of conductive substrates
US8985050B2 (en) * 2009-11-05 2015-03-24 The Trustees Of Columbia University In The City Of New York Substrate laser oxide removal process followed by electro or immersion plating
US8444848B2 (en) * 2010-02-01 2013-05-21 Tokyo Electron Limited Electrochemical substrate slicing using electromagnetic wave excitation
US20110281431A1 (en) * 2010-05-14 2011-11-17 Globalfoundries Inc. Method of patterning thin metal films
CN103346207A (zh) * 2013-06-09 2013-10-09 顺德中山大学太阳能研究院 一种光伏组件封装用背板的制造方法
CN104724663A (zh) * 2013-12-20 2015-06-24 中国科学院兰州化学物理研究所 一种硅基仿生微纳结构表面的制备方法
KR102075064B1 (ko) * 2018-11-13 2020-02-07 (주)애니캐스팅 돌출전극부가 배열된 다중배열전극 및 이를 제조하는 방법
EP3890457A1 (en) * 2020-03-30 2021-10-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Anisotropic etching using photosensitive compound

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GB1600667A (en) * 1978-05-26 1981-10-21 Pryor Edward & Son Electrolytic marking of metal articles
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4432855A (en) * 1982-09-30 1984-02-21 International Business Machines Corporation Automated system for laser mask definition for laser enhanced and conventional plating and etching
US4734174A (en) * 1986-12-17 1988-03-29 Polaroid Corporation Electrochemical formation of thin-film electrodes
US4977038A (en) * 1989-04-14 1990-12-11 Karl Sieradzki Micro- and nano-porous metallic structures
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
JP2952539B2 (ja) * 1992-03-30 1999-09-27 セイコーインスツルメンツ株式会社 微細加工装置
MX9305898A (es) * 1992-10-30 1995-01-31 Texas Instruments Inc Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.
AU4141697A (en) * 1996-09-06 1998-03-26 Obducat Ab Method for anisotropic etching of structures in conducting materials

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