JP2002359352A5 - - Google Patents
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- JP2002359352A5 JP2002359352A5 JP2002047944A JP2002047944A JP2002359352A5 JP 2002359352 A5 JP2002359352 A5 JP 2002359352A5 JP 2002047944 A JP2002047944 A JP 2002047944A JP 2002047944 A JP2002047944 A JP 2002047944A JP 2002359352 A5 JP2002359352 A5 JP 2002359352A5
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Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002047944A JP4014891B2 (ja) | 2001-03-29 | 2002-02-25 | 半導体装置の製造方法 |
TW091105751A TW567575B (en) | 2001-03-29 | 2002-03-25 | Fabrication method of semiconductor device and semiconductor device |
US10/107,298 US7208423B2 (en) | 2001-03-29 | 2002-03-28 | Semiconductor device fabrication method and semiconductor device |
KR10-2002-0017126A KR100517100B1 (ko) | 2001-03-29 | 2002-03-28 | 반도체 장치의 제조 방법 및 반도체 장치 |
CNB021198128A CN1278382C (zh) | 2001-03-29 | 2002-03-29 | 半导体器件的制造方法和半导体器件 |
KR10-2005-0050488A KR100525332B1 (ko) | 2001-03-29 | 2005-06-13 | 반도체 장치의 제조 방법 |
US11/643,907 US8163611B2 (en) | 2001-03-29 | 2006-12-22 | Semiconductor device fabrication method and semiconductor device |
US12/724,118 US8183119B2 (en) | 2001-03-29 | 2010-03-15 | Semiconductor device fabrication method using multiple mask patterns |
US12/724,019 US7824996B2 (en) | 2001-03-29 | 2010-03-15 | Semiconductor device fabrication method and semiconductor device |
US12/724,115 US8158527B2 (en) | 2001-04-20 | 2010-03-15 | Semiconductor device fabrication method using multiple resist patterns |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001095038 | 2001-03-29 | ||
JP2001-95038 | 2001-03-29 | ||
JP2002047944A JP4014891B2 (ja) | 2001-03-29 | 2002-02-25 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002359352A JP2002359352A (ja) | 2002-12-13 |
JP2002359352A5 true JP2002359352A5 (ja) | 2006-03-16 |
JP4014891B2 JP4014891B2 (ja) | 2007-11-28 |
Family
ID=26612490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002047944A Expired - Fee Related JP4014891B2 (ja) | 2001-03-29 | 2002-02-25 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4014891B2 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004363390A (ja) | 2003-06-05 | 2004-12-24 | Toshiba Corp | フォトマスクの補正方法、及び半導体装置の製造方法 |
US6972255B2 (en) * | 2003-07-28 | 2005-12-06 | Freescale Semiconductor, Inc. | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
KR100506460B1 (ko) * | 2003-10-31 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체소자의 트랜지스터 및 그 형성방법 |
JP2005227666A (ja) | 2004-02-16 | 2005-08-25 | Toshiba Corp | マスクデータ補正方法と半導体装置の製造方法 |
US20070184379A1 (en) * | 2004-03-01 | 2007-08-09 | Tokyo Electron Limited | Peeling-off method and reworking method of resist film |
US7132327B2 (en) * | 2004-05-25 | 2006-11-07 | Freescale Semiconductor, Inc. | Decoupled complementary mask patterning transfer method |
CN102610606B (zh) * | 2005-04-26 | 2016-01-27 | 瑞萨电子株式会社 | 半导体装置及其制造方法、光接近处理方法 |
JP2006310376A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
JP4987244B2 (ja) | 2005-04-28 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2007096099A (ja) | 2005-09-29 | 2007-04-12 | Toshiba Corp | 半導体装置の製造方法 |
JP2007149768A (ja) * | 2005-11-24 | 2007-06-14 | Nec Electronics Corp | 半導体装置の製造方法 |
US7579278B2 (en) * | 2006-03-23 | 2009-08-25 | Micron Technology, Inc. | Topography directed patterning |
US7723009B2 (en) | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
KR100780652B1 (ko) * | 2006-12-27 | 2007-11-30 | 주식회사 하이닉스반도체 | 반도체 소자 제조방법 |
KR100875655B1 (ko) * | 2007-01-04 | 2008-12-26 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
JP2008181957A (ja) * | 2007-01-23 | 2008-08-07 | Toshiba Corp | 半導体装置の製造方法 |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
JP4560066B2 (ja) * | 2007-06-11 | 2010-10-13 | 株式会社東芝 | パターン形成方法 |
JP5818679B2 (ja) * | 2011-12-27 | 2015-11-18 | 株式会社東芝 | 半導体装置の製造方法 |
JP5834909B2 (ja) | 2011-12-28 | 2015-12-24 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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2002
- 2002-02-25 JP JP2002047944A patent/JP4014891B2/ja not_active Expired - Fee Related