JP2002323768A5 - - Google Patents

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Publication number
JP2002323768A5
JP2002323768A5 JP2002043492A JP2002043492A JP2002323768A5 JP 2002323768 A5 JP2002323768 A5 JP 2002323768A5 JP 2002043492 A JP2002043492 A JP 2002043492A JP 2002043492 A JP2002043492 A JP 2002043492A JP 2002323768 A5 JP2002323768 A5 JP 2002323768A5
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JP
Japan
Prior art keywords
group
substituent
general formula
hydrogen atom
acid
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Application number
JP2002043492A
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English (en)
Japanese (ja)
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JP3992993B2 (ja
JP2002323768A (ja
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Publication date
Application filed filed Critical
Priority to JP2002043492A priority Critical patent/JP3992993B2/ja
Priority claimed from JP2002043492A external-priority patent/JP3992993B2/ja
Publication of JP2002323768A publication Critical patent/JP2002323768A/ja
Publication of JP2002323768A5 publication Critical patent/JP2002323768A5/ja
Application granted granted Critical
Publication of JP3992993B2 publication Critical patent/JP3992993B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002043492A 2001-02-21 2002-02-20 ポジ型電子線、x線又はeuv用レジスト組成物 Expired - Lifetime JP3992993B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002043492A JP3992993B2 (ja) 2001-02-21 2002-02-20 ポジ型電子線、x線又はeuv用レジスト組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-45214 2001-02-21
JP2001045214 2001-02-21
JP2002043492A JP3992993B2 (ja) 2001-02-21 2002-02-20 ポジ型電子線、x線又はeuv用レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002323768A JP2002323768A (ja) 2002-11-08
JP2002323768A5 true JP2002323768A5 (fr) 2005-04-07
JP3992993B2 JP3992993B2 (ja) 2007-10-17

Family

ID=26609825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002043492A Expired - Lifetime JP3992993B2 (ja) 2001-02-21 2002-02-20 ポジ型電子線、x線又はeuv用レジスト組成物

Country Status (1)

Country Link
JP (1) JP3992993B2 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004059392A1 (fr) 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. Composition de reserve positive et procede de formation d'un motif de reserve
JP4121396B2 (ja) 2003-03-05 2008-07-23 富士フイルム株式会社 ポジ型レジスト組成物
JP4115322B2 (ja) 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
US7232640B1 (en) 2003-03-31 2007-06-19 Fujifilm Corporation Positive resist composition
JP4149306B2 (ja) * 2003-04-30 2008-09-10 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2004333548A (ja) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP3981830B2 (ja) 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7250246B2 (en) 2004-01-26 2007-07-31 Fujifilm Corporation Positive resist composition and pattern formation method using the same
EP1566694B1 (fr) 2004-02-20 2014-04-02 FUJIFILM Corporation Composition pour réserve de type positif et procédé de formation de motifs employant ladite composition
US7504193B2 (en) 2004-09-02 2009-03-17 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP4368282B2 (ja) 2004-09-24 2009-11-18 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR20080026066A (ko) 2006-09-19 2008-03-24 후지필름 가부시키가이샤 감광성 조성물, 감광성 조성물에 사용하는 화합물 및감광성 조성물을 사용한 패턴형성방법
KR101524571B1 (ko) 2007-08-10 2015-06-01 후지필름 가부시키가이샤 포지티브형 레지스트 조성물, 그 조성물을 사용한 패턴 형성 방법 및 그 조성물에 사용되는 화합물

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