JP2002319495A - Manufacturing method of light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve element characteristics by making current density in an organic compound layer uniform and provide a means for manufacturing a long-life element, in a light-emitting device having a light-emitting element consisting of a positive electrode, an organic compound layer and a negative electrode. SOLUTION: After flattening the surface of a positive electrode by wiping and cleaning, an organic compound layer and a negative electrode are formed. With this, an interval between the positive electrode and the negative electrode is made constant, so that, current density is made also uniform between the organic compound layers when magnetic field is applied, which prevents deterioration of the organic compound layers and at the same time improves element characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention uses a light emitting element having a film containing an organic compound capable of emitting light by applying an electric field (hereinafter referred to as "organic compound layer"), an anode and a cathode. The present invention relates to a method for manufacturing a light-emitting device. In the present invention,
The present invention relates to a light-emitting device using a light-emitting element that has a lower driving voltage than a conventional one and has a longer life. Note that a light-emitting device in this specification refers to an image display device or a light-emitting device using a light-emitting element as a light-emitting element. In addition, the light emitting element has a connector such as an anisotropic conductive film.
((FPC: flexible printed circuit) or TAB (Tape A
utomated Bonding tape or TCP (Tape Carrier)
Package), TAB tape and TC
A light emitting device includes a module in which a printed wiring board is provided before P, or a module in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method.

[0002]

2. Description of the Related Art A light emitting element is an element that emits light when an electric field is applied. The light emission mechanism is such that by applying a voltage across the organic compound layer between the electrodes, the electrons injected from the cathode and the holes injected from the anode recombine at the luminescent center in the organic compound layer to excite the molecule. It is said to emit energy by emitting energy when the molecular exciton returns to the ground state.

As a type of molecular exciton formed by an organic compound, a singlet excited state and a triplet excited state are possible. In this specification, light emission by either one of the excited states or both of them is used. Shall be included.

In such a light emitting device, the organic compound layer is usually formed as a thin film having a thickness of less than 1 μm. Further, the light emitting element is a self-luminous element in which the organic compound layer itself emits light, and thus does not require a backlight as used in a conventional liquid crystal display. Therefore, it is a great advantage that the light emitting element can be manufactured to be extremely thin and lightweight.

Further, in an organic compound layer of, for example, about 100 to 200 nm, the time from injection of carriers to recombination is about several tens of nanoseconds in consideration of the carrier mobility of the organic compound layer. Even within the process from recombination to light emission, light emission occurs on the order of microseconds or less. Therefore, one of the features is that the response speed is extremely fast.

[0006] Due to such characteristics as thin and light weight, high-speed response, and DC low voltage driving, light-emitting elements have been attracting attention as next-generation flat panel display elements. Also,
Since it is a self-luminous type and has a wide viewing angle, it has relatively good visibility and is considered to be effective as an element used for a display screen of an electric appliance.

[0007] Such light emitting elements are classified into a passive matrix type (simple matrix type) and an active matrix type depending on the driving method. However, QVG
An active matrix type is particularly attracting attention because high-definition display having a pixel number of A or more is possible.

An active matrix light emitting device having a light emitting element has an element structure as shown in FIG. 18, in which a TFT 1902 is formed on a substrate 1901,
Over T1902, an interlayer insulating film 1903 is formed.
Note that the interlayer insulating film 1903 can be formed using an inorganic material containing silicon such as silicon oxide or silicon nitride, or an organic material such as an organic resin material such as polyimide, polyamide, or acrylic. However, an organic material is more suitable for flattening the substrate surface.

On the interlayer insulating film 1903, an anode (pixel electrode) 1905 electrically connected to the TFT 1902 by the wiring 1904 is formed. As a material for forming the anode 1905, a transparent conductive material having a large work function is suitable, such as ITO (indium tin oxides), tin oxide (SnO ₂ ), indium oxide, and zinc oxide (Zn).
An alloy comprising O), a semi-permeable film of gold, polyaniline, and the like have been proposed. Among them, ITO is most often used because it has a band gap of about 3.75 eV and has high transparency in a visible light region.

As a method of forming an ITO film, there are chemical vapor deposition, spray pyrolysis, vacuum evaporation, electron beam evaporation, sputtering, ion beam sputtering, ion plating, ion assisted evaporation, and the like. In recent years, a sputtering method is often used industrially.

On the anode 1905, an organic compound layer 190
6 are formed. In the present specification, all layers provided between the anode and the cathode are defined as organic compound layers. Specifically, the organic compound layer 1906 includes a light emitting layer, a hole injection layer,
An electron injection layer, a hole transport layer, an electron transport layer, and the like are included. Basically, a light-emitting element has a structure in which an anode / light-emitting layer / cathode is laminated in this order. In addition to this structure, an anode / hole injection layer / light-emitting layer / cathode or an anode / hole injection layer / Light-emitting layer / electron transport layer / cathode and the like.

As a method of forming an organic compound for forming the organic compound layer 1906, there are a film forming method such as an evaporation method, a printing method, an ink jet method and a spin coating method. Above all, a vapor deposition method that can be separately applied using a metal mask is often used for forming a low-molecular organic material.

After forming the organic compound layer 1906, a cathode 1907 is formed, whereby a light emitting element 1908 is formed. Note that FIG. 18 shows only light-emitting elements formed in one pixel; however, an active matrix light-emitting device is actually formed by forming a plurality of these in a pixel portion.

[0014]

In the manufacture of a light emitting device, improvement of electrodes is an important factor in improving the element characteristics of a light emitting element.

[0015] However, there are several problems with anode formation. First, in the case of the active matrix element structure as described above, since the anode is formed in contact with the interlayer insulating film, the following two problems occur.

First, there is a problem caused by a difference in temperature characteristics between an organic resin material forming an interlayer insulating film and a transparent conductive film (ITO) forming an anode. Specifically, since the two materials formed in contact have different coefficients of thermal expansion with respect to the temperature, when the temperature is applied, the material having the smaller coefficient of thermal expansion generates a crack or the like at the interface. It is easy to do.

FIG. 2A shows the relationship between the coefficient of thermal expansion and the temperature. Here, the horizontal axis represents temperature, and the vertical axis represents thermal expansion coefficient. Reference numeral 201 denotes a coefficient of thermal expansion of an organic resin material (PI: polyimide) forming an interlayer insulating film, and reference numeral 202 denotes a coefficient of thermal expansion of a transparent conductive film (ITO) forming an anode. In this graph, when the temperature of Tx, an organic resin material (PI) is the thermal expansion coefficient is a a _1, the thermal expansion coefficient of the ITO becomes a _2.

Since these coefficients of thermal expansion have a relationship of a ₁ > a ₂ , as shown in FIG.
In the case where the organic resin material 212 and the ITO 213 are formed on top of each other, cracks occur in the ITO 213 at the interface as shown by 214 in FIG.

Since ITO is an anode of a light emitting element and is an electrode for injecting holes involved in light emission, if a crack is generated here, it affects the generation of holes or the injected holes are It may be reduced or may cause deterioration of the light emitting element.

Another problem is a gas generated from an interlayer insulating film formed of an organic resin material such as polyimide, polyamide and acrylic. Generally, the light emitting element is
Since it is known that the light-emitting element is easily deteriorated by oxygen or water, there is a problem that deterioration of the light-emitting element is accelerated by a gas such as oxygen generated from the interlayer insulating film.

Further, there is another problem caused by the flatness of the anode surface. This is a problem common to both passive matrix type and active matrix type,
If the flatness of the anode surface is poor, the thickness of the organic compound layer formed on the anode becomes uneven. When the thickness of the organic compound layer of the light emitting element is non-uniform, an electric field is non-uniformly applied and the current density in the organic compound layer is also non-uniform. As a result, not only the luminance of the light emitting element is reduced, but also the element life is shortened because the element is deteriorated quickly.

Accordingly, an object of the present invention is to provide a light-emitting element which has a slower deterioration and a longer life than the conventional one by solving these problems.

It is another object of the present invention to provide a light emitting device having a longer life than the conventional one by using such a light emitting element. Further, it is another object of the present invention to provide an electric appliance that can be kept longer than before by producing an electric appliance using the light emitting device.

[0024]

A method for solving the above problem will be described below. That is, as shown in FIG. 1, a TFT (current control TFT) 102 is formed on a substrate 101, and an interlayer insulating film 1 made of an organic resin material is formed thereon.
03 is formed, and an insulating film 104 made of an inorganic insulating material is formed on the interlayer insulating film 103.

The insulating film 104 is made of silicon oxide,
Silicon nitride (SiN), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN),
An inorganic insulating material containing silicon or aluminum, such as aluminum nitride oxide (AlNO) or aluminum oxynitride (AlNO), is used.

Here, the insulating film 10 is formed on the interlayer insulating film 103.
The reason for forming the anode 4 is to prevent outgassing from the interlayer insulating film 103 and to reduce the difference in the thermal expansion coefficient between the interlayer insulating film 103 and the anode (ITO) 106 formed thereon. This is to reduce the occurrence of cracks in a part of the (ITO) 106 near the interface.

The coefficient of thermal expansion of the inorganic insulating material forming the insulating film 104 is as shown by 203 in FIG. That is, it can be seen that the coefficient of thermal expansion of the inorganic insulating material takes a value between the organic resin material (PI) 201 and the transparent conductive film (ITO) 202.

[0028] Specifically, the thermal expansion coefficient of the organic resin material (PI) at the temperature Tx is a _1, the thermal expansion coefficient of ITO forming the anode is a _3, the thermal expansion coefficient of the insulating material a ₂ , and the relationship between these coefficients of thermal expansion is a ₁ > a ₂ > a ₃
It is. Therefore, as shown in FIG. 2C, the insulating film 223 made of an inorganic insulating material is
4, the anode (IT)
O) The tension (shear stress) applied to the 224 can be reduced.

The organic resin material contains a gas such as oxygen, and may be released from the inside of the organic resin with time. However, as described above, the insulating film 223 made of an inorganic insulating material is formed on the interlayer insulating film made of an organic resin material.
Is provided, it is possible to prevent gas from being released from inside the organic resin.

Thus, the light-emitting element formed on the interlayer insulating film made of the organic resin material can be prevented from being deteriorated by gas, so that the life of the light-emitting element can be extended.

After the insulating film 104 is formed, a contact hole is opened in the interlayer insulating film 103 and the insulating film 104, and a wiring 105 for the current controlling TFT 102 is formed. Then, an anode 106 made of a transparent conductive material is formed so as to be in contact with the wiring 105.

Then, the organic compound layer 10 is formed on the anode 106.
7 and the cathode 108, the anode 106,
The light emitting element 109 including the organic compound layer 107 and the cathode 108 is formed, and an active matrix light emitting device is completed.

However, since the surface of the transparent conductive film serving as the anode has rough irregularities, the surface of the transparent conductive film must be flattened in order to increase the light emission luminance of the light emitting element 109 and extend the life. Is required.

The flatness of the surface, that is, the surface roughness has a relationship with the contact angle. When the surface has a fine uneven structure, the surface free energy per unit area changes accordingly. This is described by Wenzel's equation (Equation 1).

[0035]

[Formula 1] COS θ ′ = γ (γ _S −γ _SL ) / γ _L = γ COS
θ

Here, θ is a contact angle on a smooth surface, and θ ′ is a contact angle on a surface having an uneven structure.
Note that γ _S represents the surface free energy on the solid surface, γ _L represents the surface free energy on the liquid surface, and γ _SL represents the surface free energy at the interface between the solid and the liquid. In addition, r is a parameter indicating how many times the surface area of the surface having the uneven structure is larger than the smooth surface. That is, from this equation, it can be said that the contact angle changes according to the surface area.

More specifically, when the contact angle θ ′ on the surface of the transparent conductive film having the concavo-convex structure is θ ′ <90 °, the contact angle θ after the treatment is made by flattening to make θ ′ <θ.
Satisfy the relationship On the other hand, when θ ′> 90 °, the contact angle θ after the processing is inversely flattened to obtain θ ′.
> Θ.

Therefore, in the present invention, in the fabrication of the light emitting device, after forming the transparent conductive film, the surface is wiped with a cleaning liquid by a PVA (polyvinyl alcohol) -based porous material together with a cleaning liquid. Thus, the contact angle of the surface with water is changed, and the surface is flattened using the change in the contact angle as an index.

Although the method of directly wiping and flattening the anode surface formed after the formation of the wiring has been described, in the present invention, a flattening film of about 1 to 50 ° is formed on the anode surface to form a flat surface. After enhancing the properties, the planarizing film can be wiped in a similar manner.

After the wiring is formed, it is also possible to perform wiping before patterning using the transparent conductive film as an anode.
Further, the wiring may be formed after forming the anode first and wiping the surface of the anode.

After wiping the surface of the anode 106, a bank 110 made of an insulating material is formed. Note that the shape of the bank 110 can be controlled by the insulating material and the etching conditions used here. Then, after forming the bank 110, the organic compound layer 1 containing the organic compound is formed.
07 are formed, and the cathode 108 is further formed. As described above, the anode 106, the organic compound layer 107, and the cathode 108
Can be formed.

Further, in the case of an element structure in which an organic compound layer is formed after forming a cathode and an anode is formed, the surface of the cathode is wiped by the method described above after forming the cathode. It can also be purified.

In recent years, light-emitting elements capable of converting energy released when returning from a triplet excited state to a ground state (hereinafter, referred to as “triplet excited energy”) into light emission have been successively announced, and their luminous efficiency has been reduced. Attention has been paid to the height (Reference 1: DF O'Brien, MA Baldo, ME Thomp
son and SR Forrest, "Improved energy transfer i
n electrophosphorescent devices ", Applied Physics
Letters, vol. 74, No. 3, 442-444 (1999)) (Reference 2: Tetsuo TSUTSUI, Moon-Jae YANG, MasayukiYAHIRO,
Kenji NAKAMURA, Teruichi WATANABE, Taishi TSUJI,
Yoshinori FUKUDA, Takeo WAKIMOTO and Satoshi MIYAG
UCHI, "High Quantum Efficiency in Organic Light-Em
itting Devices with Iridium-Complex as a Triplet E
missive Center ", Japanese Journal of Applied Physi
cs, Vol. 38, L1502-L1504 (1999)).

Reference 1 uses a metal complex containing platinum as a central metal, and Reference 2 uses a metal complex containing iridium as a central metal. A light-emitting element (hereinafter, referred to as a “triplet light-emitting element”) formed using an organic compound capable of converting triplet excitation energy into light emission (hereinafter, referred to as a triplet light-emitting material) emits light with higher luminance than before. -High luminous efficiency can be achieved.

However, according to the report example of Reference 2,
The half-life of luminance in the case where the initial luminance was set at 500 cd / m ² is 17
It is about 0 hours, and there is a problem in the element life. Therefore, by applying the present invention to a triplet light-emitting element, a very high-performance light-emitting element that has a long lifetime can be provided in addition to high-luminance light emission and high light emission efficiency due to light emission from a triplet excited state. .

Therefore, the present invention includes the application of the concept of the present invention of forming an insulating film on the above-described interlayer insulating film and flattening the anode surface to a triplet light emitting device. .

[0047]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a light emitting device of the present invention will be described below. Note that only a part of a pixel portion where a light-emitting element is formed is described here for simplification of description.

First Embodiment First, a TFT 302 is formed on a substrate 301 as shown in FIG.
Note that what is shown here is a TFT that controls a current flowing through the light emitting element, and is referred to as a current control TFT 302 in this specification.

Next, on the current controlling TFT 302,
An interlayer insulating film 303 is formed for the purpose of planarizing the substrate surface. Here, polyimide, acrylic, polyamide, polyimide amide, BCB (benzocyclobutene)
Materials such as organic resins are used.
It is formed with an average film thickness of μm (FIG. 3B).

As described above, by forming the interlayer insulating film 303 from an organic resin material, the surface can be satisfactorily planarized. In addition, since organic resin materials generally have a low dielectric constant, parasitic capacitance can be reduced. In order to prevent outgassing from the interlayer insulating film, as shown in FIG.
An insulating film 304 is formed on the substrate 03.

The insulating film 304 is made of silicon oxide, silicon nitride (S
iN), silicon oxynitride (SiON), silicon nitride oxide (S
iNO), aluminum nitride (AlN), aluminum nitride oxide (AlNO), aluminum oxynitride (AlN)
O), such as an inorganic insulating material containing silicon or aluminum, or a stacked film combining these materials. In any case, the insulating film 304 is formed from an inorganic insulating material. The thickness of the insulating film 304 is 100 to 200 nm. When the insulating film 304 is formed, the reaction pressure is 20 to 200 Pa and the substrate temperature is 30 by plasma CVD.
It can be formed by discharging at a high frequency (13.56 MHz) power density of 0.1 to 1.0 W / cm ² at 0 to 400 ° C.

Thereafter, a resist mask having a predetermined pattern is formed, and a contact hole reaching the drain region of each current control TFT 302 is formed. Insulating film 3
04 is etched first, and the interlayer insulating film 303 made of an organic resin material is etched to form a contact hole.

Then, a conductive metal film is formed by a sputtering method or a vacuum evaporation method, patterned with a mask, and then etched to form a wiring 305 (FIG. 3).
(D)). In addition, as the wiring material, in addition to Al and Ti,
It is also possible to use these alloy films.

Next, a transparent conductive film is formed thereon, and an anode 306 serving as a pixel electrode is formed by patterning (FIG. 3E). Note that an indium tin oxide (ITO) film or a transparent conductive film in which zinc oxide (ZnO) is mixed with 2 to 20% of indium oxide can be used as the transparent electrode.

When the anode 306 is formed, heat treatment is performed. Here, crystallization of the transparent conductive film forming the anode is performed by heating at 230 to 350 ° C.

Next, the surface of the anode is subjected to the flattening treatment of the present invention. As a treatment method, the surface of the anode 306 is planarized by wiping the surface of the anode 306 using a PVA (polyvinyl alcohol) -based porous body.

Since the contact angle θ _{1 on the} surface of the transparent conductive film in the first embodiment is θ ₁ <90 °, the wiping treatment is performed to make the contact angle θ ₂ with the contact angle θ ₂ after the treatment. The relationship is set to satisfy θ ₁ <θ ₂ .

As a method for wiping with the PVA-based porous body 308, the PVA-based porous body 308 is wound around the shaft 307, and this is brought into contact with the surface of the anode 306.
7 is rotated. However, in the present invention, the anode surface may be wiped and flattened by the frictional force generated between the PVA-based porous body 308 and the anode surface.

When wiping with the PVA-based porous body 308, a cleaning liquid is used. As the cleaning solution used at this time, in addition to pure water, a neutral detergent such as a higher alcohol or an alkylbenzene sulfonate using alkylbenzene as a raw material, or an aqueous solution containing a weakly acidic or weakly alkaline chemical can be used. Further, in addition to polar solvents such as ethanol, methanol, toluene and acetone, non-polar solvents such as benzene and carbon tetrachloride can be used.

The processing speed and the flatness of the surface depend on axis 3.
It can be adjusted by the number of rotations and the pushing value of 07. In addition, the indentation value in this specification refers to the vertical direction of the substrate as the Y direction, and the position of the axis when the PVA-based porous body 308 is in contact with the processing surface as a reference value (Y = 0).
The positive direction is the direction in which the PVA-based porous body is pressed against the substrate, and the value indicates how much the axis moves toward the substrate during wiping. In the present invention, the rotation speed of the shaft 307 is desirably 100 to 300 rpm, and the pushing value is desirably 0.1 to 1.0 mm.

After the surface of the anode 306 is flattened as described above, as shown in FIG.
9, an organic compound layer 310 and a cathode 311 are formed.

The bank 309 is formed so as to fill the gap between the anodes. The bank 309 is formed by using an organic material such as an organic resin, and then is formed into a desired shape by etching. In this embodiment, the organic compound layer 310 includes a plurality of layers such as a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a buffer layer as a hole injection layer in addition to the light emitting layer. It is formed by laminating in combination. Note that the thickness of the organic compound layer 310 may be 10 to 400 [nm].

After forming the organic compound layer 310, the cathode 311 is formed by an evaporation method. As the conductive film serving as the cathode 311, an aluminum and an element belonging to Group 1 or 2 of the periodic table and aluminum were formed by a co-evaporation method, in addition to an MgAg or Al—Li alloy film (an alloy film of aluminum and lithium). It is possible to use a membrane. The cathode 3
The film thickness of 11 may be 80 to 200 [nm]. As described above, the light-emitting element of the present invention can be formed.

In the present embodiment, the anode 30
Although the method of forming the bank 309 after wiping the upper surface of the anode 6 has been described, the anode surface may be wiped after the bank is formed. However, when this method is used, there is a problem that an organic material such as an organic resin formed on the uneven anode surface is hardly etched on the anode surface when patterning the bank.

[Embodiment 2] The flattening treatment in the present invention is not limited to after the formation of the anode as shown in Embodiment 1, but is performed after the formation of the transparent conductive film (before the anode patterning). It is also possible to carry out the conversion.

Therefore, a method for forming a light emitting element by a method different from that shown in Embodiment Mode 1 will be described with reference to FIG.

The current control TFT 5 is provided on the substrate 501.
02 is formed, and an interlayer insulating film 503 and an insulating film 504 are formed.
Is formed, the insulating film 504 and the interlayer insulating film 503 are formed.
A contact hole is formed in the TFT 50 for controlling current.
As a manufacturing method (FIGS. 5A to 5C) until the wiring 505 electrically connected to 2 is formed, a method similar to that described in Embodiment 1 is used.

Then, when the wiring 505 is formed, as shown in FIG.
It is formed with a thickness of 200 nm. Note that as the transparent conductive film 506, an indium tin oxide (ITO) film or a material in which indium oxide and zinc oxide (ZnO) are mixed can be used.

Then, when the transparent conductive film 506 is formed, the flattening process of the present invention is performed. As a treatment method, the surface of the transparent conductive film 506 is wiped and cleaned using a PVA (polyvinyl alcohol) -based porous body.
The surface is flattened.

As a method for wiping with a PVA-based porous body, a method similar to that described in Embodiment 1 may be used, and a shaft 507 around which a PVA-based porous body 508 is wound is used. Is rotated, and the PVA-based porous body 508 is rotated.
The surface of the transparent conductive film 506 is flattened by the frictional force when contacts the surface of the transparent conductive film 506.

In the wiping treatment, a cleaning liquid is used.
As the cleaning solution used at this time, in addition to pure water, a neutral detergent such as a higher alcohol or an alkylbenzene sulfonate using alkylbenzene as a raw material, or an aqueous solution containing a weakly acidic or weakly alkaline chemical can be used. Further, in addition to polar solvents such as ethanol, methanol, acetone, and toluene, non-polar solvents such as benzene and carbon tetrachloride can be used.In the present embodiment, pure water or a neutral detergent is used as the cleaning liquid. It is desirable.

The rotation speed of the shaft 507 is 100 to 300.
rpm and the indentation value is preferably 0.1 to 1.0 mm.

After the surface of the transparent conductive film 506 is flattened, an anode 509 is formed by patterning as shown in FIG. After the anode 509 is formed, heat treatment is performed. Note that here, 230 to 350
Heat at ℃ to crystallize the transparent conductive film forming the anode. When the anode 509 is formed, the bank 510,
An organic compound layer 511 and a cathode 512 are formed. In addition,
The bank 510, the organic compound layer 511, and the cathode 512
What is necessary is just to carry out similarly to that shown in Embodiment Mode 1.

As described above, a light emitting device having the light emitting element of the present invention can be formed.

[Embodiment 3] Further, Embodiment 3
In the above, after forming a flattening film made of an organic resin material on the anode surface to reduce the uneven surface on the anode, PV
A method of performing the wiping treatment with the A-type porous body and flattening will be described.

After a current controlling TFT 602 is formed on a substrate 601 in FIG. 6A and an interlayer insulating film 603 and an insulating film 604 are formed, contact holes are formed in the insulating film 604 and the interlayer insulating film 603. As a manufacturing method up to formation of a wiring 605 electrically connected to the current controlling TFT 602, a method similar to that described in Embodiment 1 is used.

Then, where the wiring 605 is formed, a transparent conductive film 606 is formed with a thickness of 80 to 120 nm. Note that as the transparent conductive film 606, an indium tin oxide (ITO) film or a material in which zinc oxide (ZnO) is mixed with indium oxide can be used.

In the third embodiment, after the transparent conductive film 606 is formed, the anode 607 is formed by patterning the transparent conductive film 606. And the anode 607 is
A heat treatment is performed after the formation. Here,
Heating is performed at 230 to 350 ° C. to crystallize the transparent conductive film forming the anode 607 (FIG. 6B). Then, when the anode 607 is formed, a flattening film 608 is formed (FIG. 6C).

Next, the flattening process of the present invention is performed. As a treatment method, the surface of the flattening film 608 is wiped and cleaned using a PVA (polyvinyl alcohol) -based porous body to planarize the surface (FIG. 6D).

As a method for wiping the PVA-based porous body, a method similar to that described in Embodiment 1 may be used, and the shaft 609 around which the PVA-based porous body 610 is wound is used. To rotate the PVA-based porous body 610
Is in contact with the surface of the flattening film 608,
The surface of the flattening film 608 is wiped and flattened.

A cleaning liquid is used for wiping with a PVA-based porous body. As the cleaning solution used at this time, in addition to pure water, a neutral detergent such as a higher alcohol or an alkylbenzene sulfonate using alkylbenzene as a raw material, or an aqueous solution containing a weakly acidic or weakly alkaline chemical can be used. Further, in addition to polar solvents such as ethanol, methanol, acetone, and toluene, non-polar solvents such as benzene and carbon tetrachloride can be used.In the present embodiment, a polar solvent or a non-polar solvent is used as a cleaning liquid. It is desirable to use.

The rotation speed of the shaft 507 is 100 to 300.
rpm and the indentation value is preferably 0.1 to 1.0 mm.

After the surface of the flattening film 608 is flattened, a bank 611, an organic compound layer 612, and a cathode 613 are formed as shown in FIG. Bank 6
11, the organic compound layer 612 and the cathode 613 may be formed in the same manner as described in Embodiment Mode 1.

As described above, a light emitting device having the light emitting element of the present invention can be formed. Embodiment 3
By carrying out, the unevenness on the anode surface is flattened to a certain extent with an organic resin material having a high flatness, and then a flattening process using Velklin is performed, so compared to directly flattening the anode surface, Processing can be performed in a short time, which is effective in improving throughput during production.

As described above, by forming a light emitting device having a light emitting element using the present invention, an organic resin material for forming an interlayer insulating film by an insulating film formed at an interface between an interlayer insulating film and an anode. Degassing from the
Further, since the difference in the coefficient of thermal expansion between the interlayer insulating film and the anode can be reduced by the insulating film, cracks generated at the interface with the anode can be prevented.

Further, by flattening the anode surface by wiping the surface with a PVA-based porous material, it is possible to improve the luminance characteristics of the light emitting device, lower the driving voltage, and extend the life of the device.

[0087]

[Example 1] In this example, a light emitting element manufactured by the manufacturing method described in Embodiment Mode 1 will be described. This embodiment will be described with reference to FIG.

First, as shown in FIG.
A plurality of current control TFTs 302 are formed on the TFT 01. Note that a glass substrate is used as the substrate. Further, a method for manufacturing a TFT including a current control TFT formed on a substrate will be described in detail in a third embodiment.

Next, on the current controlling TFT 302,
An interlayer insulating film 303 is formed. In this embodiment,
It is formed with an average film thickness of 1.0 to 2.0 μm using polyimide (FIG. 3B).

Next, an insulating film 304 is formed on the interlayer insulating film 303.
To form Note that in this embodiment, a silicon oxynitride film is used as an inorganic insulating material for forming the insulating film. Note that the thickness is 100 to 200 nm.

In this embodiment, the reaction pressure is 20 to 200 Pa and the substrate temperature is 300 to 40 by the plasma CVD method.
0 ° C, high frequency (13.56 MHz) power density 0.1 ~
Discharge is performed at 1.0 W / cm ² , and is formed using SiH ₄ , NH ₃ , and N ₂ O as a reaction gas.

Thereafter, a resist mask having a predetermined pattern is formed, and a contact hole reaching the drain region of each current control TFT 302 is formed. The contact hole is formed by a dry etching method. in this case,
Insulating film 3 using a mixed gas of CF ₄ and O _{2 as} an etching gas
04 is etched first, and then a contact hole can be formed by etching the interlayer insulating film 303 made of an organic resin material using a mixed gas of CF ₄ , O ₂ , and He.

Then, a conductive metal film is formed by a sputtering method or a vacuum evaporation method, patterned by a mask, and then etched to form a wiring 305 (FIG. 3).
(D)). In this embodiment, the wiring material is A
Use l.

Next, a transparent conductive film is further formed on the transparent conductive film.
An anode 306 which is formed to a thickness of 20 nm and which becomes a pixel electrode by patterning is formed.
(E)). Note that an indium tin oxide (ITO) film is used as the transparent conductive material.

When the anode 306 is formed, heat treatment is performed. In the present embodiment, ITO is heated at 230 to 350 ° C. to crystallize the ITO forming the anode. And
After the heat treatment, the anode surface is flattened. As a treatment method, the surface of the anode 306 is flattened by wiping the surface of the anode 306 using a PVA (polyvinyl alcohol) -based porous material, specifically, Velklin (manufactured by Ozu Sangyo). .

In this embodiment, Berglin 30 is used.
As shown in FIG. 4 (A), the wiping method in FIG.
07 and wrap it around the anode 306
And the shaft 307 is rotated to rotate the anode 306
The surface of the anode 306 can be flattened as shown in FIG.

FIG. 4C shows the state shown in FIG.
Contact with water on the anode surface before planarization
Angle θ₁4 (D) and FIG. 4 (B).
Contact angle with water on the anode surface after flattening
θ_TwoIs shown. In this embodiment, the contact angle θ₁Is
θ₁<90 °, these contact angles include θ ₁<
θ_TwoThe following relationship holds.

FIG. 15 shows the results of measuring the contact angles before and after the flattening process. The measurement was performed by measuring the contact angle when the surface of the transparent conductive film formed on the glass substrate was wiped and cleaned with Velklin. As described above, it is shown that the contact angle of the surface of the transparent conductive film is increased by wiping.

In the case of wiping with Berglin 308, a cleaning liquid is used. In this embodiment, pure water is used.
The number of rotations of the shaft 307 in this embodiment is 100 to 3
00 rpm, and the indentation value is 0.1 to 1.0 mm.

After the surface of the anode 306 is flattened, the bank 309 and the organic compound layer 3 are formed as shown in FIG.
10. A cathode 311 is formed.

The bank 309 is formed to fill the gap between the anodes, and is formed into a desired shape by etching after forming a film using an organic material such as an organic resin. In this embodiment, the organic compound layer 310 is formed of copper phthalocyanine (hereinafter referred to as CuPc) with a thickness of 20 nm as a hole injection layer.
As a hole transporting layer, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as α
-NPD) with a thickness of 20 nm, and then as a light-emitting layer 4,4′-dicarbazole-biphenyl (hereinafter, referred to as “light-emitting layer”).
CBP) and tris (2-phenylpyridine) iridium (hereinafter Ir (ppy) ₃ ) are formed to a thickness of 20 nm by a co-evaporation method, and bathocuproine (hereinafter referred to as a BCP) having a thickness of 10 nm is used as a hole blocking layer. Formed thick,
Further, it has a laminated structure in which tris (8-quinolinolato) aluminum (hereinafter, referred to as Alq ₃ ) is formed with a thickness of 40 nm as an electron transporting layer.

After forming the organic compound layer 310, the cathode 311 is formed by a vapor deposition method. As a conductive film serving as the cathode 311, in addition to an alloy film such as Mg: Ag (an alloy film of magnesium and silver) and Al: Li (an alloy film of aluminum and lithium), the conductive film belongs to Group 1 or 2 of the periodic table. It is possible to use a film in which a belonging element and aluminum are formed by a co-evaporation method. The thickness of the cathode 311 is 80 to 200 [nm] (typically 100 to 150 [n]).
m]).

As described above, the light emitting device of the present invention can be formed.

[Embodiment 2] In this embodiment, the third embodiment will be described.
A light-emitting element manufactured by the manufacturing method described in 1 will be described. This embodiment will be described with reference to FIG.

In this embodiment, a flattening film 6 having a thickness of 50 nm is formed on the anode surface by using polyimide as an organic resin material.
08 (FIG. 6C).

After the flattening film 608 is formed, the surface of the flattening film 608 is flattened by wiping the surface of the flattening film 608 using Berglin (Ozu Sangyo) (FIG. 6D).

Here, a specific description will be given with reference to FIG. The reference numerals used in FIG. 7 are the same as those used in FIG. The surface of the anode 607 formed over the insulating film 604 has an uneven shape as shown in FIG.

However, by forming the flattening film 608 using an organic resin material having flatness, the flatness of the surface can be increased as shown in FIG. 7B. Then, the surface whose flatness is increased by the flattening film is wiped and cleaned with Velklin, whereby a more flattened surface can be obtained.

As a method of wiping with Berglin,
The same method as that described in Embodiment Mode 3 may be used. The shaft 609 around which the Velklin 610 is wound is rotated, and the flattening is performed by the frictional force when the Belklin 610 comes into contact with the surface of the planarizing film 608. The surface of the film 608 is wiped and flattened.

In the present embodiment, ethanol or methanol is used as a cleaning liquid when wiping with Velklin. The rotation speed of the shaft 507 is 100 to 300 r.
pm, and the indentation value is 0.1 to 1.0 mm.

After the surface of the flattening film 608 is flattened, a bank 611, an organic compound layer 612, and a cathode 613 are formed. The bank 611 and the organic compound layer 612
The cathode 613 may be manufactured using the same method as in the first embodiment.

[Embodiment 3] Further, the flattening of the anode surface according to the present invention can be carried out by changing the processing order of the manufacturing method shown in Embodiment 1. That is, after the interlayer insulating film and the insulating film are formed, the anode is formed before forming the wiring with the current controlling TFT, and after flattening the anode,
Forming contact holes in the insulating film and the interlayer insulating film,
Wiring can also be formed. In this case, since the wiring is formed on the flattened anode surface, the adhesion between the anode and the wiring can be improved.

[Embodiment 4] In this embodiment, a light emitting element manufactured by using the present invention will be described. In addition,
Here, an example of a method for simultaneously manufacturing a pixel portion having the light-emitting element of the present invention over the same substrate and a TFT (an n-channel TFT and a p-channel TFT) of a driver circuit provided around the pixel portion is described with reference to FIGS. This will be described with reference to FIG.

First, in this embodiment, Corning # 70
A substrate 900 made of glass such as barium borosilicate glass typified by 59 glass or # 1737 glass or aluminoborosilicate glass is used. Note that the substrate 900 is not limited as long as it is a light-transmitting substrate, and a quartz substrate may be used. Further, a plastic substrate having heat resistance enough to withstand the processing temperature of this embodiment may be used.

Next, as shown in FIG.
A base film 901 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate. Although a two-layer structure is used as the base film 901 in this embodiment, a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used. The first layer of the base film 901 is formed by plasma CVD.
The silicon oxynitride film 901a formed by using SiH ₄ , NH ₃ , and N ₂ O as reaction gases is
m (preferably 50 to 100 nm). In this embodiment, a 50 nm-thick silicon oxynitride film 901a (composition ratio: Si = 32%, O = 27%, N = 24%, H = 17%)
Was formed. Next, as the second layer of the base film 901,
Using a plasma CVD method, a silicon oxynitride film 901b formed by using SiH ₄ and N ₂ O as reaction gases is reduced to 50 to 2
The layer is formed to a thickness of 00 nm (preferably 100 to 150 nm). In this embodiment, a 100-nm-thick silicon oxynitride film 901b (composition ratio Si = 32%, O = 59%, N
= 7%, H = 2%).

Next, a semiconductor layer 902 is formed on the underlayer 901.
To 905 are formed. The semiconductor layers 902 to 905 are formed by forming a semiconductor film having an amorphous structure by a known means (sputtering method, L
After forming a film by a PCVD method or a plasma CVD method, a known crystallization treatment (a laser crystallization method, a thermal crystallization method, or a thermal crystallization method using a catalyst such as nickel).
Is performed and the crystalline semiconductor film obtained is patterned into a desired shape. The thickness of the semiconductor layers 902 to 905 is 25 to 80 nm (preferably 30 to 60 nm). Although there is no limitation on the material of the crystalline semiconductor film,
Preferably silicon (silicon) or silicon germanium _{(Si X Ge 1-X (} X = 0.0001~0.02)) may be formed such as an alloy. In this embodiment, the plasma CV
After a 55-nm amorphous silicon film was formed by method D, a solution containing nickel was held on the amorphous silicon film. After dehydrogenation (500 ° C., 1 hour) of this amorphous silicon film, thermal crystallization (550 ° C., 4 hours) is performed, and further, a laser annealing process for improving crystallization is performed. Thus, a crystalline silicon film was formed. Then, semiconductor layers 902 to 905 are formed by patterning the crystalline silicon film using a photolithography method.

After the formation of the semiconductor layers 902 to 905, the semiconductor layers 90 to 905 are controlled in order to control the threshold value of the TFT.
2 to 905 may be doped with a trace amount of an impurity element (boron or phosphorus).

When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser can be used. In the case of using these lasers, it is preferable to use a method in which laser light emitted from a laser oscillator is linearly condensed by an optical system and irradiated on a semiconductor film. The crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is set to 300 Hz, and the laser energy density is set to 100 to 4.
00 mJ / cm ² (typically 200 to 300 mJ / cm
² ). When a YAG laser is used, its second harmonic is used and a pulse oscillation frequency of 30 to 300 kHz is used.
And a laser energy density of 300 to 600 mJ /
cm ² (typically 350 to 500 mJ / cm ² ). And a width of 100 to 1000 μm, for example 400 μ
The laser light condensed linearly at m may be irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear laser light at this time may be set to 50 to 90%.

Next, a gate insulating film 906 covering the semiconductor layers 902 to 905 is formed. The gate insulating film 906 is formed by a plasma CVD method or a sputtering method and has a thickness of 40 to
The insulating film containing silicon is formed to have a thickness of 150 nm. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N =
7%, H = 2%). Needless to say, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) is used by a plasma CVD method.
e) and O ₂ were mixed, the reaction pressure was 40 Pa, and the substrate temperature was 30.
It can be formed by discharging at a high-frequency (13.56 MHz) power density of 0.5 to 0.8 W / cm ² at 0 to 400 ° C. The silicon oxide film thus manufactured can obtain favorable characteristics as a gate insulating film by subsequent thermal annealing at 400 to 500 ° C.

A heat-resistant conductive layer 907 for forming a gate electrode on the gate insulating film 906 is
It is formed with a thickness of 0 nm (preferably 250 to 350 nm). The heat-resistant conductive layer 907 may be formed as a single layer,
If necessary, a laminated structure including a plurality of layers such as two layers or three layers may be employed. Ta, T for the heat-resistant conductive layer
It includes an element selected from i and W, an alloy containing the above element, or an alloy film combining the above elements. These heat-resistant conductive layers are formed by a sputtering method or a CVD method, and it is preferable to reduce the impurity concentration to reduce the resistance, and it is particularly preferable that the oxygen concentration be 30 ppm or less. In this embodiment, a tungsten (W) film is formed with a thickness of 300 nm. W film is W
May be formed by a sputtering method using
It can also be formed by thermal CVD using tungsten fluoride (WF ₆ ). In any case, in order to use it as a gate electrode, it is necessary to reduce the resistance, and it is desirable that the resistivity of the W film be 20 μΩcm or less. The resistivity of the W film can be reduced by enlarging the crystal grains. However, when there are many impurity elements such as oxygen in W, the crystallization is inhibited and the resistance is increased. Thus, in the case of using the sputtering method, a W target having a purity of 99.9999% is used, and further, the W film is formed with sufficient care so as not to mix impurities from the gas phase during film formation. 9
２０20 μΩcm can be realized.

On the other hand, when a Ta film is used for the heat-resistant conductive layer 907, it can be similarly formed by a sputtering method. The Ta film uses Ar as a sputtering gas. Also, if an appropriate amount of Xe or Kr is added to the gas during sputtering,
The internal stress of the film to be formed can be relaxed to prevent the film from peeling. The resistivity of the α-phase Ta film is about 20 μΩcm and can be used for the gate electrode.
The resistivity of the a-film was about 180 μΩcm, and was not suitable for use as a gate electrode. Since the TaN film has a crystal structure close to the α phase, if the TaN film is formed under the Ta film,
A phase Ta film is easily obtained. Although not shown, it is effective to form a silicon film doped with phosphorus (P) with a thickness of about 2 to 20 nm under the heat-resistant conductive layer 907. Thereby, the adhesion of the conductive film formed thereon is improved and oxidation is prevented, and at the same time, the heat-resistant conductive layer 90 is formed.
It is possible to prevent a small amount of an alkali metal element contained in 7 from diffusing into the gate insulating film 906 in the first shape. In any case, the heat-resistant conductive layer 907 has a resistivity of 10 to 5
It is preferable to set it in the range of 0 μΩcm.

Next, a resist mask 908 is formed by using the photolithography technique. And
A first etching process is performed. In this embodiment, an ICP etching apparatus is used, Cl ₂ and CF ₄ are used as etching gases, and RF (13.5) of 3.2 W / cm ² at a pressure of 1 Pa.
(6 MHz) power is supplied to form plasma. 224 mW / cm ² RF on substrate side (sample stage)
(13.56 MHz) power is applied, thereby applying a substantially negative self-bias voltage. Under these conditions, the etching rate of the W film is about 100 nm / min. First
In the etching process, the time when the W film is just etched is estimated based on the etching rate, and the time obtained by increasing the etching time by 20% is set as the etching time.

By the first etching process, conductive layers 909 to 912 having a first tapered shape are formed. The angle of the tapered portion of the conductive layers 909 to 912 is 15 to 30 °
It is formed so that In order to perform etching without leaving a residue, over-etching is performed to increase the etching time at a rate of about 10 to 20%. Silicon oxynitride film (gate insulating film 9) for W film
06) is 2-4 (typically 3),
By the overetching treatment, the exposed surface of the silicon oxynitride film is etched by about 20 to 50 nm (FIG. 8B).

Then, a first doping process is performed to add an impurity element of one conductivity type to the semiconductor layer. Here, n
A step of adding an impurity element for giving a mold is performed. The mask 908 on which the conductive layer of the first shape is formed is left as it is,
Using the conductive layers 909 to 912 having the tapered shape as masks, an impurity element imparting n-type is added in a self-aligning manner by an ion doping method. An impurity element imparting n-type is added to the tapered portion at the end of the gate electrode and the gate insulating film 906.
Through the process, the dose is set to 1 × 10 ^{13 to} 5 × 10 ¹⁴ at for doping so as to reach the semiconductor layer located thereunder.
oms / cm ² and an acceleration voltage of 80 to 160 keV. As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically phosphorus (P) or arsenic (As) is used. Here, phosphorus (P) is used. By such an ion doping method, an impurity element imparting n-type is added to the first impurity regions 914 to 917 in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ atoms / cm ³ (FIG. 8).
(C)).

In this step, depending on the doping conditions, the impurities flow under the first shape conductive layers 909 to 912, and the first impurity regions 914 to 917 are removed from the first shape.
May overlap with the conductive layers 909 to 912 having the shape shown in FIG.

Next, a second etching process is performed as shown in FIG. The etching process is also performed by an ICP etching apparatus, and CF ₄ and Cl ₂ are used as etching gases.
RF power of 3.2 W / cm ² (13.5
6 MHz), bias power 45 mW / cm ² (13.56 M
(Hz) at a pressure of 1.0 Pa. Conductive layers 918 to 921 having the second shape formed under these conditions
Is formed. A tapered portion is formed at the end, and the tapered shape gradually increases inward from the end. As compared with the first etching process, the ratio of isotropic etching is increased by the amount of the lower bias power applied to the substrate side, and the angle of the tapered portion is 30 to 60 °. The mask 908 is etched and its edge is shaved, and becomes a mask 922. In the step of FIG. 8D, the surface of the gate insulating film 906 is etched by about 40 nm.

Then, an impurity element for imparting n-type is doped under a condition of a high acceleration voltage with a lower dose than in the first doping process. For example, when the accelerating voltage is 70 to 120
keV, a dose of 1 × 10 ¹³ / cm ² , and the first impurity regions 924 to 92 having an increased impurity concentration.
7 and second impurity regions 928 to 931 in contact with the first impurity regions 924 to 927 are formed. In this step, depending on the doping conditions, the impurity
The second impurity regions 928 to 931 extend below the conductive layers 918 to 921 of the second shape.
921 may also occur. The impurity concentration in the second impurity region is 1 × 10 ¹⁶ to 1 × 10 ^{18 at.}
ms / cm ³ (FIG. 9A).

Then, as shown in FIG. 9B, p
In the semiconductor layers 902 and 905 forming the channel type TFT, impurity regions 933 (933) having a conductivity type opposite to one conductivity type are formed.
a, 933b) and 934 (934a, 934b). Also in this case, the second shape conductive layers 918 and 921 are used.
Is used as a mask to add an impurity element imparting a p-type, and an impurity region is formed in a self-aligned manner. At this time, a resist mask 932 is formed on the semiconductor layers 903 and 904 forming the n-channel TFT, and the entire surface is covered. The impurity regions 933 and 934 formed here are formed of diborane (B
It is formed by an ion doping method using ₂ H ₆ ). The concentration of the impurity element imparting p-type in the impurity regions 933 and 934 is
The density is set to 2 × 10 ^{20 to} 2 × 10 ²¹ atoms / cm ³ .

However, these impurity regions 933, 9
34 specifically contains an impurity element imparting n-type.
It can be divided into two areas. The third impurity regions 933a and 934a have a size of 1 × 10 ²⁰ to 1 × 10 ²¹ atoms.
includes an impurity element imparting n-type conductivity in a concentration of s / cm ^3,
The fourth impurity regions 933b and 934b are 1 × 10 ¹⁷ to 1
Contains an impurity element imparting n-type at a concentration of × 10 ²⁰ atoms / cm ³ . However, these impurity regions 9
The concentration of the p-type imparting impurity element of 33b and 934b is set to 1 × 10 ¹⁹ atoms / cm ³ or more, and the concentration of the p-type imparting impurity element is set to n in the third impurity regions 933a and 934a. By making the concentration of the impurity element giving the mold 1.5 to 3 times,
Since the third impurity region functions as a source region and a drain region of the p-channel TFT, no problem occurs.

Thereafter, as shown in FIG. 9C, a first interlayer insulating film 937 is formed over the conductive layers 918 to 921 having the second shape and the gate insulating film 906. The first interlayer insulating film 937 may be formed using a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a stacked film obtained by combining these. In any case, the first interlayer insulating film 937 is formed from an inorganic insulating material. The thickness of the first interlayer insulating film 937 is 100 to 200 nm. When a silicon oxide film is used as the first interlayer insulating film 937,
TEOS and O ₂ are mixed by plasma CVD, the reaction pressure is 40 Pa, the substrate temperature is 300 to 400 ° C., and discharge is performed at a high frequency (13.56 MHz) power density of 0.5 to 0.8 W / cm ^2. Can be. In the case where a silicon oxynitride film is used as the first interlayer insulating film 937, a silicon oxynitride film formed from SiH ₄ , N ₂ O, and NH ₃ by a plasma CVD method, or a silicon oxynitride film formed from SiH ₄ and N ₂ O is used. What is necessary is just to form with the manufactured silicon oxynitride film. The production conditions in this case are a reaction pressure of 20 to 200 Pa and a substrate temperature of 30.
0 to 400 ° C, high frequency (60MHz) power density 0.1
~ 1.0 W / cm ² . Alternatively, as the first interlayer insulating film 937, a silicon oxynitride hydride film formed using SiH ₄ , N ₂ O, and H ₂ may be used. Similarly, the silicon nitride film is formed by SiH ₄ , N
It can be prepared from H _3.

Then, a step of activating the impurity element imparting n-type or p-type added at each concentration is performed. This step is performed by a thermal annealing method using a furnace annealing furnace. In addition, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. In the thermal annealing method, the oxygen concentration is 1 ppm or less,
Preferably in a nitrogen atmosphere of 0.1 ppm or less 400 ~
The heat treatment is performed at 700 ° C., typically 500 to 600 ° C. In this embodiment, the heat treatment is performed at 550 ° C. for 4 hours. When a plastic substrate having a low heat-resistant temperature is used as the substrate 501, a laser annealing method is preferably used.

Subsequent to the activation step, the atmosphere gas is changed, and the atmosphere gas is changed to 300 to 100% in an atmosphere containing 3 to 100% hydrogen.
A heat treatment is performed at 450 ° C. for 1 to 12 hours to hydrogenate the semiconductor layer. This step is to terminate dangling bonds of 10 ¹⁶ to 10 ¹⁸ / cm ^{3 in} the semiconductor layer by thermally excited hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed. In any case, the semiconductor layer 9
It is preferable that the defect density in the range of 02 to 905 be 10 ¹⁶ / cm ³ or less.
% May be provided.

Then, a second interlayer insulating film 939 made of an organic insulating material is formed with an average thickness of 1.0 to 2.0 μm. As organic resin materials, polyimide, acrylic,
Polyamide, polyimide amide, BCB (benzocyclobutene) and the like can be used. For example, in the case of using a polyimide of a type that is thermally polymerized after being applied to a substrate, it is formed by firing at 300 ° C. in a clean oven.
In the case of using acrylic, a two-component type is used, and after mixing the main material and the curing agent, the whole surface is applied using a spinner and then pre-heated at 80 ° C. for 60 seconds on a hot plate. Then, it can be formed by firing in a clean oven at 250 ° C. for 60 minutes.

As described above, by forming the second interlayer insulating film 939 from an organic insulating material, the surface can be satisfactorily flattened. In addition, since organic resin materials generally have a low dielectric constant, parasitic capacitance can be reduced. However, since it is hygroscopic and not suitable as a protective film, it is preferable to use it in combination with a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like formed as the first interlayer insulating film 937 as in this embodiment. .

Further, an insulating film 940 is formed on the second interlayer insulating film 939 formed of an organic insulating material. Note that the insulating film 940 is formed using silicon oxide, silicon nitride (SiN), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), or aluminum nitride oxide (Al
NO) and an inorganic insulating material containing silicon or aluminum, such as aluminum oxynitride (AlNO). Note that the insulating film formed here can be formed by a method similar to that of the first interlayer insulating film 937.

Thereafter, a resist mask having a predetermined pattern is formed, and a contact hole formed in each semiconductor layer and reaching an impurity region serving as a source region or a drain region is formed. The contact hole is formed by a dry etching method. In this case, CF ₄ ,
First, the insulating film 940 is etched using a mixed gas of O ₂ , then the second interlayer insulating film 939 made of an organic resin material is etched using a mixed gas of CF ₄ , O ₂ , and He, and then the etching gas is again etched. Is changed to CF ₄ and O ₂ , and the first interlayer insulating film 937 is etched. Further, in order to increase the selectivity with respect to the semiconductor layer, a contact hole can be formed by switching the etching gas to CHF ₃ and etching the third shape gate insulating film 570.

Then, a conductive metal film is formed by a sputtering method or a vacuum evaporation method, patterned by a mask, and then etched to form source wirings 941 to 944 and drain wirings 945 to 947. Although not shown, in the present embodiment, this wiring is formed of a laminated film of a 50-nm-thick Ti film and a 500-nm-thick alloy film (an alloy film of Al and Ti).

Next, a transparent conductive film was placed on top of the transparent conductive film.
An anode 948 is formed by patterning with a thickness of 20 nm and patterning (FIG. 10A). In this embodiment, indium tin oxide (IT) is used as a transparent electrode.
O) 2-20% zinc oxide (Z
A transparent conductive film mixed with nO) is used.

The anode 948 is connected to the drain wiring 947
Current control TFT by overlapping and forming
And the drain region is electrically connected.

Next, as shown in FIG.
A third interlayer insulating film 949 having an opening at a position corresponding to 48 is formed. The third interlayer insulating film 949 has insulating properties, functions as a bank, and has a role of separating an organic compound layer of an adjacent pixel. In this embodiment, a third interlayer insulating film 949 is formed using a resist.

In this embodiment, the thickness of the third interlayer insulating film 949 is set to about 1 μm, and the opening is formed so as to become wider as it approaches the anode 947, that is, to form a so-called reverse taper. This is formed by forming a resist, covering a portion other than a portion where an opening is to be formed with a mask, irradiating with UV light, and removing the exposed portion with a developing solution.

As in the present embodiment, the third interlayer insulating film 94
When the organic compound layer 9 is formed into an inversely tapered shape, the organic compound layer is separated between adjacent pixels when the organic compound layer is formed in a later step, so that the organic compound layer and the third interlayer insulating film 949 are separated. Even if the thermal expansion coefficients are different, cracking and peeling of the organic compound layer can be suppressed.

In this embodiment, a film made of resist is used as the third interlayer insulating film. However, depending on the case, polyimide, polyamide, acrylic, BCB may be used.
(Benzocyclobutene), a silicon oxide film, or the like can also be used. The third interlayer insulating film 949 may be an organic substance or an inorganic substance as long as the substance has an insulating property. At this time, heat treatment is performed on the anode 948 at 230 to 350 ° C.
The transparent conductive film for forming the anode 948 is crystallized.

Next, the surface of the anode is flattened. In the present embodiment, the surface of the anode 948 is wiped and cleaned using Berglin (manufactured by Ozu Sangyo), thereby forming the anode 94.
8 The surface is flattened.

Here, pure water is used as the cleaning liquid. Also, the rotation speed of the shaft around which Berglin is wound is 1
00 to 300 rpm, the indentation value is 0.1 to 1.0
mm.

Next, as shown in FIG. 10B, an organic compound layer 950, a cathode 951 protection electrode 952, and a passivation film 953 are formed by an evaporation method. In addition,
In this embodiment, an Mg: Ag electrode is used as the cathode of the light emitting element, but another known material may be used.

The organic compound layer 950 is formed by laminating a plurality of layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a buffer layer in addition to the light emitting layer. I have. The structure of the organic compound layer used in this example will be described in detail below.

In this embodiment, CuP is used as the hole injection layer.
The hole transport layer is formed by vapor deposition using α-NPD.

Next, a light emitting layer is formed. In this embodiment, an organic compound layer which emits different light is formed by using different materials for the light emitting layer. In this embodiment, red,
An organic compound layer which emits green and blue light is formed. Also,
Since a vapor deposition method is used for all of the film formation methods, it is possible to form a light emitting layer using a different material for each pixel by using a metal mask during film formation.

[0151] emitting layer coloring in red, the Alq ₃ 4-
Dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (hereinafter “DCM1”
And 4-dicyanomethylene-2-methyl-6-
It is formed using a material doped with (julolidin-4-yl-vinyl) -4H-pyran (hereinafter, referred to as “DCM2”) or the like. In addition, (1,10-phenanthroline) tris (1,3-diphenyl-phenylene) which is an Eu complex with N, N'-diallylicititane-1,6-hexanesiaminato) ink (II) (Zn (salhn)). A material doped with 1,3-diazoto) europium (III) (Eu (DBM) ₃ (Phen) or the like can be used, but other known materials can also be used.

The light emitting layer emitting green light can be formed by co-evaporation of CBP and Ir (ppy) ₃ . At this time, it is preferable that the hole blocking layer is laminated using BCP. In addition, Alq
_3. Benzoquinolinolatoberylium complex (BeBq) can be used. Furthermore, coumarin in Alq ₃ 6
A material using a material such as quinacridone or quinacridone as a dopant is also possible, but other known materials can also be used.

Further, the light emitting layer which emits blue light is formed of a distyryl derivative, 4,4'-bis (2,2-diphenyl-vinyl) -biphenyl (hereinafter referred to as DPVBi).
N, which is a zinc complex having an azomethine compound as a ligand,
N'-salicylitane-1,6-hexanesiaminate) sink (II) (Zn (s
alhn)) and 4,4′-bis (2,2-diphenyl-vinyl) -diphenyl (DPVBi) doped with perylene can be used, but other known materials may also be used.

Next, an electron transport layer is formed. Note that a material such as a 1,3,4-oxadiazole derivative or a 1,2,4-triazole derivative (TAZ) can be used for the electron transporting layer; however, in this embodiment, 1,2,4- 30 by vapor deposition using a triazole derivative (TAZ)
It is formed with a thickness of about 60 nm.

Thus, an organic compound layer having a laminated structure is formed. The thickness of the organic compound layer 950 in this embodiment is 10 to 400 [nm] (typically 60 to 400 nm).
150 [nm]), and the thickness of the cathode 951 is 80 to 200 [n].
m] (typically 100 to 150 [nm]).

After forming the organic compound layer, the cathode 951 of the light emitting element is formed by a vapor deposition method. In this embodiment, Mg: Ag is used as the conductive film serving as the cathode of the light-emitting element. However, a film in which aluminum and an element belonging to Group 1 or 2 of the periodic table and aluminum are formed by co-evaporation is used. Can also be used.

After the formation of the cathode 951, the protection electrode 952
Is formed. The organic compound layer 950 is also used for the protection electrode 952.
Can be protected from moisture and oxygen, but more preferably a passivation film 953 is provided.
In this embodiment, a 300-nm-thick silicon nitride film is provided as the protective film 953. This protective film may be formed continuously without opening to the atmosphere after the protective electrode 952.

The protection electrode 952 is provided to prevent the deterioration of the cathode 951, and is typically a metal film containing aluminum as a main component. Of course, other materials may be used. Also,
Since the organic compound layer 950 and the cathode 951 are very sensitive to moisture, it is preferable to form the protective electrode 952 up to the protection electrode 952 continuously without opening to the atmosphere to protect the organic compound layer from the outside air.

Thus, a light emitting device having a structure as shown in FIG. 10B is completed. Note that an overlapping portion 954 of the anode 947, the organic compound layer 950, and the cathode 951 corresponds to a light-emitting element.

A p-channel TFT 960 and an n-channel TFT 961 are TFTs included in a driving circuit,
OS is formed. The switching TFT 962 and the current control TFT 963 are TFTs included in the pixel portion, and the driver circuit TFT and the pixel portion TFT can be formed over the same substrate.

In the case of a light emitting device using a light emitting element,
The voltage of the power supply of the drive circuit is about 5-6V, and the maximum is 10V
Since the degree is sufficient, deterioration due to hot electrons in the TFT does not cause much problem. Since the driving circuit needs to operate at high speed, it is preferable that the gate capacitance of the TFT is small. Therefore, in the driver circuit of the light-emitting device using the light-emitting element as in this embodiment, the second impurity region 929 and the fourth impurity region 933b included in the semiconductor layer of the TFT are formed by the gate electrodes 918 and 919, respectively.
It is preferable to adopt a configuration that does not overlap with.

[Embodiment 5] In this embodiment, a method for manufacturing a light emitting device different from that of Embodiment 4 will be described.

The steps up to the formation of the second interlayer insulating film 939 are the same as in the first embodiment. As illustrated in FIG. 11A, after the second interlayer insulating film 939 is formed, an insulating film 940 is formed so as to be in contact with the second interlayer insulating film 939.

The insulating film 940 is a second interlayer insulating film 939
Is contained in the anode 948 and the third interlayer insulating film 9.
This is effective in preventing the organic compound layer 950 from entering through the layer 82. In the case where the second interlayer insulating film 939 includes an organic resin material, the provision of the insulating film 940 is particularly effective because the organic resin material contains a large amount of moisture. Note that in this embodiment, a silicon nitride film is used as the insulating film 940.

Thereafter, a resist mask having a predetermined pattern is formed, and a contact hole formed in each semiconductor layer and reaching an impurity region serving as a source region or a drain region is formed. The contact hole is formed by a dry etching method. In this case, CF ₄ ,
First, the insulating film 940 is etched using a mixed gas of O ₂ , then the second interlayer insulating film 939 made of an organic resin material is etched using a mixed gas of CF ₄ , O ₂ , and He, and then the etching gas is again etched. Is changed to CF ₄ and O ₂ , and the first interlayer insulating film 937 is etched. Further, in order to increase the selectivity with respect to the semiconductor layer, a contact hole can be formed by switching the etching gas to CHF ₃ and etching the third shape gate insulating film 570.

Then, a conductive metal film is formed by a sputtering method or a vacuum evaporation method, patterned by a mask, and then etched to form source wirings 941 to 944 and drain wirings 945 to 947. Although not shown, in the present embodiment, this wiring is formed of a laminated film of a 50-nm-thick Ti film and a 500-nm-thick alloy film (an alloy film of Al and Ti).

Next, a transparent conductive film is formed on the
An anode 948 is formed by patterning with a thickness of 0 nm and patterning (FIG. 11A). In this embodiment, indium tin oxide (IT) is used as a transparent electrode.
O) 2-20% zinc oxide (Z
A transparent conductive film mixed with nO) is used.

The anode 948 is connected to the drain wiring 947
Current control TFT by overlapping and forming
And the drain region is electrically connected.

Next, as shown in FIG.
A third interlayer insulating film 982 having an opening at a position corresponding to 48 is formed. In this embodiment, when the opening is formed, the side wall is tapered by using a wet etching method. Unlike the case shown in Embodiment 4, since the organic compound layer formed on the third interlayer insulating film 982 is not divided, if the side wall of the opening is not sufficiently gentle, the deterioration of the organic compound layer due to the step may be reduced. Care must be taken, as this can be a significant problem.

In this embodiment, although a film made of silicon oxide is used as the third interlayer insulating film 982, depending on the case, polyimide, polyamide, acryl, B
An organic resin film such as CB (benzocyclobutene) can also be used.

Here, heat treatment is performed at 230 to 350 ° C.
The transparent conductive film for forming the anode 948 is crystallized.

Next, the anode surface is flattened. In the present embodiment, the surface of the anode 948 is wiped and cleaned using Berglin (manufactured by Ozu Sangyo), thereby forming the anode 94.
8 The surface is flattened.

Here, pure water is used as the cleaning liquid. Also, the rotation speed of the shaft around which Berglin is wound is 1
00 to 300 rpm, the indentation value is 0.1 to 1.0
mm.

Before forming the organic compound layer 950 on the third interlayer insulating film 982, the third interlayer insulating film 98
Plasma treatment using argon was applied to the surface of
The surface of the interlayer insulating film 982 is preferably densified. With the above structure, entry of moisture from the third interlayer insulating film 982 into the organic compound layer 950 can be prevented.

Next, an organic compound layer 950 is formed by an evaporation method, and a cathode (Mg: Ag electrode) 95 is formed by an evaporation method.
1 and a protection electrode 952 are formed. At this time, before forming the organic compound layer 950 and the cathode 951, the anode 9
It is desirable to perform a heat treatment on 47 to completely remove moisture. In this embodiment, a Mg: Ag electrode is used as the cathode of the light emitting element, but other known materials may be used.

As the organic compound layer 950, a known low-molecular or high-molecular organic material can be used. In this embodiment, a case where an organic compound layer is formed using a polymer material will be described. However, it goes without saying that the low-molecular-weight materials as shown in Examples 1 to 4 can be used. Further, the material forming the organic compound layer can be the same for all pixels. For example, a material that can emit red light, a material that can emit green light, and a material that can emit blue light can be used. When different materials are applied to each pixel, there are a plurality of organic compound layers formed of different materials, and a full-color display is possible. Note that combinations of materials that can emit blue, green, and red light include the following.

First, for forming an organic compound layer capable of emitting red light, polyvinyl carbazole (hereinafter referred to as PVK) which is a hole transporting material and 2- (4-biphenylyl) which is an electron transporting material are used. −5- (4-tert-butylphenyl) -1,3,4-oxadiazole (hereinafter referred to as PB
D) is dispersed in a molecular weight of 30 to 40%, and a coating solution containing about 1% of DCM2 added as a dopant is applied by a spin coating method, whereby an organic compound layer capable of emitting green light can be formed. .

In order to form an organic compound layer capable of emitting green light, a coating liquid in which PBD is molecularly dispersed in PVK by 30 to 40%, and about 1% of coumarin 6 is further added as a dopant is applied by spin coating. Thus, an organic compound layer that emits green light can be formed.

In order to form an organic compound layer capable of emitting blue light, a coating liquid in which 30 to 40% of PBD is molecularly dispersed in PVK and about 1% of perylene is added as a dopant is applied by spin coating. Thus, an organic compound layer capable of emitting blue light can be formed.

It is to be noted that these materials can be used in common for all pixels, or these materials can be used differently for each pixel.

Further, the organic compound layer 9
Although it is possible to protect 50 from moisture and oxygen, it is more preferable to provide a protective film 953. In this embodiment, a 300-nm-thick silicon nitride film is provided as the protective film 953. This protective film may be formed continuously without opening to the atmosphere after the protective electrode 952.

The protective electrode 952 is provided to prevent the deterioration of the cathode 951, and is typically a metal film containing aluminum as a main component. Of course, other materials may be used. Also,
Since the organic compound layer 950 and the cathode 951 are very sensitive to moisture, it is preferable to form the protective electrode 952 up to the protection electrode 952 continuously without opening to the atmosphere to protect the organic compound layer from the outside air. Note that the cathode 951 and the protective electrode 952 are formed by an evaporation method using a metal mask.

The thickness of the organic compound layer 950 is 10 to
400 [nm] (typically 60 to 150 [nm]), and the thickness of the cathode 951 is 80 to 200 [nm] (typically 100 to 100 [nm]).
１５０150 [nm]).

Thus, a light emitting device having a structure as shown in FIG. 11B is completed. Note that a portion 954 where the anode 948, the organic compound layer 950, and the cathode 951 overlap corresponds to a light-emitting element.

A p-channel TFT 960 and an n-channel TFT 961 are TFTs included in a driving circuit,
OS is formed. The switching TFT 962 and the current control TFT 963 are TFTs included in the pixel portion, and the driver circuit TFT and the pixel portion TFT can be formed over the same substrate. Note that the method for manufacturing the light-emitting device of the present invention is not limited to the method described in this embodiment.

[Embodiment 6] In this embodiment, the light emitting panel manufactured up to FIG. 10B in Embodiment 4 or the light emitting panel manufactured up to FIG. 11B in Embodiment 5 is completed as a light emitting device. The method will be described in detail with reference to FIG.

FIG. 12A is a top view of a light emitting panel in which an element substrate is sealed, and FIG. 12B is a plan view of FIG.
It is sectional drawing cut | disconnected by A '. Reference numeral 801 indicated by a dotted line denotes a source side driver circuit, 802 denotes a pixel portion, and 803 denotes a gate side driver circuit. Reference numeral 804 denotes a sealing substrate, 805 denotes a sealant, and an inside surrounded by the sealant 805 is a space 807.

It is to be noted that a wiring (not shown) for transmitting a signal inputted to the source side driving circuit 801 and the gate side driving circuit 803 allows a video signal or an FPC (flexible printed circuit) 809 to be an external input terminal. Receive a clock signal. Note that although a state where the FPC is connected to the light-emitting panel is shown here, a module in which an IC (integrated circuit) is directly mounted via the FPC is referred to as a light-emitting device in this specification.

Next, the cross-sectional structure will be described with reference to FIG. A pixel portion 802 and a source side driver circuit 801 are formed above the substrate 810.
Is formed by a plurality of pixels including a current control TFT 811 and an anode 812 electrically connected to the drain thereof. The source side drive circuit 801 is an n-channel type TF
It is formed using a CMOS circuit combining T813 and p-channel TFT 814.

After the banks 815 are formed at both ends of the anode 812, an organic compound layer 816 and a cathode 817 are formed on the anode 812, and a light emitting element 818 is formed.

Note that the cathode 817 functions as a wiring common to all pixels, and is electrically connected to the FPC 809 via the connection wiring 808.

After the formation of the light emitting element 818, a passivation film 821 is formed. This is the connection wiring 808
This is to prevent the sealant 805 from being directly formed thereon. Thereby, the adhesiveness of the sealant 805 can be improved.

[0193] Note that a sealing substrate 804 made of glass is adhered with a sealant 805. Note that an ultraviolet curable resin or a thermosetting resin is preferably used as the sealant 805. Further, if necessary, a spacer made of a resin film may be provided in order to secure an interval between the sealing substrate 804 and the light emitting element 818. The space 807 inside the sealant 805 is filled with an inert gas such as nitrogen or a rare gas. Further, it is desirable that the sealant 805 is a material that does not transmit moisture and oxygen as much as possible.

With the structure described above, the light emitting element is placed in the space 807.
The light emitting element can be completely shut off from the outside by enclosing the light emitting element, and deterioration of the light emitting element due to moisture or oxygen entering from the outside can be prevented. Therefore, a highly reliable light-emitting device can be obtained.

The structure of this embodiment is similar to that of the fourth embodiment.
Alternatively, the present invention can be implemented by freely combining with any configuration in the fifth embodiment.

[Embodiment 7] FIG. 13A is a circuit diagram showing a more detailed top view of the pixel portion of the light emitting device described in Embodiments 4 and 5 formed using the present invention. Is shown in FIG. 13, a switching TFT 704 is formed using the switching (n-channel type) TFT 962 of FIG. Therefore, for the description of the structure, the description of the switching (n-channel) TFT 962 may be referred to. A wiring denoted by 703 is a gate electrode 704 of the switching TFT 704.
a, 704b are gate wirings electrically connected to each other.

Although the present embodiment has a double gate structure in which two channel forming regions are formed, a single gate structure in which one channel forming region is formed or a triple gate structure in which three channel forming regions are formed. good.

The source of the switching TFT 704 is connected to the source wiring 715, and the drain is connected to the drain wiring 705. Further, the drain wiring 705 is electrically connected to the gate electrode 707 of the current controlling TFT 706. Note that the current control TFT 706 is formed using the current control (p-channel type) TFT 963 in FIG. Therefore, for the description of the structure, the description of the current control (p-channel type) TFT 963 may be referred to. In this embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.

The source of the current controlling TFT 706 is electrically connected to the current supply line 716, and the drain is electrically connected to the drain wiring 717. The drain wiring 717 is electrically connected to an anode (pixel electrode) 718 indicated by a dotted line.

At this time, a storage capacitor (capacitor) is formed in a region indicated by 719. Capacitor 719
Represents the semiconductor film 7 electrically connected to the current supply line 716
20, formed between an insulating film (not shown) in the same layer as the gate insulating film and the gate electrode 707; Further, a capacitor formed by the gate electrode 707, the same layer (not shown) as the first interlayer insulating film, and the current supply line 716 can be used as a storage capacitor.

The structure of this embodiment can be implemented by freely combining with any of the structures of the fourth and fifth embodiments.

[Embodiment 8] Since a light emitting device using a light emitting element is a self-luminous type, it has better visibility in a bright place and a wider viewing angle than a liquid crystal display device. Therefore, various electric appliances can be completed using the light emitting device of the present invention.

[0203] Electric appliances using the light emitting device manufactured according to the present invention include a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook type personal computer. Computers, game consoles, personal digital assistants (mobile computers, mobile phones, portable game consoles, electronic books, etc.),
An image reproducing device provided with a recording medium (specifically, a device provided with a display device capable of reproducing a recording medium such as a digital video disk (DVD) and displaying the image) is provided. In particular, in a portable information terminal in which a screen is often viewed from an oblique direction, since a wide viewing angle is regarded as important, it is preferable to use a light emitting device having a light emitting element. FIG. 12 shows specific examples of these electric appliances.

FIG. 14A shows a display device,
01, a support base 2002, a display unit 2003, a speaker unit 2004, a video input terminal 2005, and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2003. Since a light-emitting device having a light-emitting element is a self-luminous type, it does not require a backlight and can have a thinner display portion than a liquid crystal display device. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

FIG. 14B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103,
An operation key 2104, an external connection port 2105, a shutter 2106, and the like are included. The display device is manufactured by using the light-emitting device manufactured according to the present invention for the display portion 2102.

FIG. 14C shows a notebook personal computer, which includes a main body 2201, a housing 2202, and a display portion 2.
203, keyboard 2204, external connection port 220
5, including a pointing mouse 2206 and the like. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2203.

FIG. 14D shows a mobile computer, which includes a main body 2301, a display portion 2302, and a switch 230.
3, an operation key 2304, an infrared port 2305, and the like. The light emitting device manufactured according to the present invention is connected to the display unit 230.
2 is produced.

FIG. 14E) shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, and includes a main body 2401, a housing 2402, a display portion A 2403, and a display portion B.
2404, a recording medium (DVD or the like) reading unit 2405,
An operation key 2406, a speaker unit 2407, and the like are included. A display portion A 2403 mainly displays image information, and a display portion B
Reference numeral 2404 mainly displays character information, and the light emitting device manufactured according to the present invention is referred to as display units A, B 2403, and 2404.
404. Note that the image reproducing device provided with the recording medium includes a home game machine and the like.

FIG. 14F shows a goggle type display (head mounted display),
1, including a display unit 2502 and an arm unit 2503. The display device is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2502.

FIG. 14G shows a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, and an image receiving portion 260.
6, a battery 2607, a voice input unit 2608, operation keys 2609, an eyepiece 2610, and the like. It is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2602.

[0211] Here, FIG. 14H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a voice input portion 2704, a voice output portion 2705, operation keys 2706,
An external connection port 2707, an antenna 2708, and the like are included.
It is manufactured by using the light emitting device manufactured according to the present invention for the display portion 2703. Note that the display portion 2703 displays white characters on a black background, so that power consumption of the mobile phone can be suppressed.

If the emission luminance of the organic material becomes higher in the future, the light containing the output image information can be enlarged and projected by a lens or the like and used for a front-type or rear-type projector.

[0213] Further, the above-mentioned electric appliances are available on the Internet or C
Information distributed through an electronic communication line such as an ATV (cable television) is frequently displayed, and in particular, opportunities to display moving image information are increasing. Since the response speed of the organic material is extremely high, the light-emitting device is preferable for displaying moving images.

[0214] In the light-emitting device, since the light-emitting portion consumes power, it is preferable to display information so that the light-emitting portion is reduced as much as possible. Therefore, when a light emitting device is used for a portable information terminal, particularly a display portion mainly for character information such as a mobile phone or a sound reproducing device, the light emitting portion is driven to form character information with a non-light emitting portion as a background. Is preferred.

As described above, the applicable range of the light emitting device manufactured by using the present invention is extremely wide, and the light emitting device can be used for electric appliances in various fields. Further, the electric appliance of this embodiment can be completed by using the light emitting device manufactured by performing the method shown in Embodiments 1 to 7.

Embodiment 9 In this embodiment, the state of the surface of the transparent conductive film by performing the wiping treatment of the present invention will be described with reference to an atomic force microscope (AFM).
The surface was observed using a scope. The result is shown in FIG.

In the surface observation in this example, an ITO film formed to a thickness of 110 nm on a glass substrate and crystallized by heat treatment at 250 ° C. is used as a measurement surface.

FIG. 16 shows the average surface roughness (Ra) before and after the wiping treatment using Berglin. Here, the average surface roughness is a three-dimensional extension of the center line average roughness defined in JIS B0601 so that the surface can be applied to the surface.

From this result, it can be seen that after the wiping treatment, the average surface roughness on the measurement surface is reduced and the flatness is increased. Further, FIG. 17 shows the maximum height difference (P-V) of the peaks and valleys before and after the wiping treatment using Berglin. The maximum height difference between the mountains and valleys here is
Shows the height difference between the summit and the valley bottom. In addition, the summit and the valley bottom referred to here are “summit” defined in JIS B0601.
The “valley bottom” is three-dimensionally expanded, and the peak is expressed as the highest elevation in the mountain on the designated surface, and the valley bottom is expressed as the lowest elevation in the valley on the specified surface.

It can be seen that even at the maximum height difference (PV) between peaks and valleys, the flatness on the measurement surface is increased by the wiping treatment. In FIGS. 19 and 20, AF
M shows the uneven shape of the substrate surface observed by M. In addition,
FIG. 19 shows the result of observing the measurement surface before the wiping treatment, and FIG. 20 shows the result of observing the measurement surface after the wiping treatment.

As described above, the fact that the treated surface is flattened in the wiping treatment of the present invention is shown not only by the measurement of the contact angle but also by the measurement result of the average surface roughness by AFM.

[Embodiment 10] The manufacturing method of the present invention is similarly applied to the case of forming a light emitting device having a structure in which an organic compound layer is formed on a cathode and an anode is formed on the organic compound layer. can do.

That is, the light emitting element can be formed by forming the cathode of the light emitting element first, wiping the cathode surface, forming an organic compound layer on the cathode, and then forming the anode.

[0224] Except for the difference in the layered structure of the light emitting element, the present invention can be implemented by combining the contents described in the other embodiments.

[0225]

As described above, the deterioration of the light emitting element can be prevented by forming the anode of the light emitting element on the insulating film and wiping and flattening the anode surface by using the present invention. . Further, by flattening the anode surface, the current density in the organic compound layer can be increased, so that the emission luminance can be increased and the driving voltage can be reduced, so that a long-life light emitting element can be formed. .

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an element structure according to the present invention.

FIG. 2 is a diagram illustrating a coefficient of thermal expansion.

FIG. 3 illustrates a method for manufacturing a light-emitting element of the present invention.

FIG. 4 is a diagram illustrating a wiping process according to the present invention.

FIG. 5 illustrates a method for manufacturing a light-emitting element of the present invention.

FIG. 6 illustrates a method for manufacturing a light-emitting element of the present invention.

FIG. 7 is a diagram illustrating a wiping process according to the present invention.

FIG. 8 illustrates a manufacturing process.

FIG. 9 illustrates a manufacturing process.

FIG. 10 illustrates a manufacturing process.

FIG. 11 illustrates a manufacturing process.

FIG. 12 illustrates a sealing structure of a light-emitting device.

FIG. 13 illustrates a structure of a pixel portion.

FIG. 14 illustrates an example of an electric appliance.

FIG. 15 is a view showing a measurement result of a contact angle.

FIG. 16 is a diagram showing a measurement result by AFM.

FIG. 17 is a diagram showing a measurement result by AFM.

FIG. 18 illustrates a conventional example.

FIG. 19 is a view showing a measurement result by AFM.

FIG. 20 is a diagram showing a measurement result by AFM.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 29/786 H05B 33/10 H05B 33/02 33/14 A 33/10 H01L 29/78 616A 33/14 619A (72 ) Inventor Tokuko Miyagi 398 Hase, Atsugi-shi, Kanagawa Prefecture Inside Semi-Conductor Energy Laboratory Co., Ltd. 398, Nagatani, Ichiba Semiconductor Energy Laboratory Co., Ltd. F-term (reference) DD01 DD02 DD03 DD13 DD14 DD15 DD17 EE04 EE14 EE23 EE44 EE45 FF02 FF04 FF28 FF30 FF36 GG01 GG02 GG13 GG25 GG32 GG43 GG45 GG47 HJ01 HJ04 HJ12 HJ23 HL04 HL06 HL07 NN11 NN22 NN11 NN22 NN11 NN22 NN11 9 PP34 PP35 QQ11 QQ19 QQ23 QQ24 QQ25 5G435 AA17 BB05 CC09 EE37 HH01 HH18 HH20 KK05

Claims (39)

[Claims] 1. A method for manufacturing a light emitting device having an anode, an organic compound layer, and a cathode, wherein the anode is formed and the surface of the anode is wiped with a wiping material. . 2. The method according to claim 1, wherein the anode is made of a transparent conductive film. 3. The method for manufacturing a light-emitting device according to claim 1, wherein the surface is flattened by the wiping. 4. The method according to claim 1, wherein the wiping material is a PVA-based porous material. 5. A method for manufacturing a light emitting device according to claim 1, wherein said surface is wiped with a cleaning liquid and said wiping material. 6. The method according to claim 1, wherein the surface is rubbed with the wiping material. 7. The method according to claim 1, wherein when the contact angle of the surface with water before wiping is smaller than 90 °, the contact angle with water after wiping is equal to that of water before wiping. A method for manufacturing a light-emitting device, which is larger than a contact angle and smaller than 90 °. 8. A method for manufacturing an active matrix light emitting device having a plurality of TFTs on a substrate, wherein a plurality of TFTs are formed on the substrate, and a first insulating film made of an organic resin material is formed on the TFTs. Forming, forming a second insulating film made of an inorganic insulating material on the first insulating film, forming a transparent conductive film on the second insulating film, and wiping the surface of the transparent conductive film. A method for manufacturing a light-emitting device, comprising wiping with a cleaning material. 9. A method for manufacturing an active matrix light emitting device having a plurality of TFTs on a substrate, wherein a plurality of TFTs are formed on the substrate, and a first insulating film made of an organic resin material is formed on the TFTs. Forming a second insulating film made of an inorganic insulating material on the first insulating film, forming an anode on the second insulating film, and wiping the surface of the anode with a wiping material A method for manufacturing a light-emitting device. 10. The method for manufacturing a light emitting device according to claim 8, wherein the surface is flattened by the wiping. 11. The method for manufacturing a light emitting device according to claim 8, wherein the organic resin material is acrylic, polyimide, or polyamide. 12. The method according to claim 8, wherein the inorganic insulating material is silicon oxide, silicon nitride, silicon nitride oxide, silicon oxynitride, aluminum nitride, aluminum nitride oxide, or aluminum oxynitride. A method for manufacturing a light-emitting device, which is a feature. 13. The method for manufacturing a light emitting device according to claim 8, wherein the wiping material is a PVA-based porous material. 14. The method for manufacturing a light emitting device according to claim 8, wherein the transparent conductive film is wiped with a cleaning liquid and the cleaning material. 15. The method for manufacturing a light emitting device according to claim 8, wherein the surface is rubbed with the wiping material. 16. The contact angle with water before wiping when the contact angle of the surface with water before wiping is smaller than 90 ° according to claim 8 or 9. A method for manufacturing a light-emitting device, which is larger than a contact angle and smaller than 90 °. 17. A method for manufacturing a light emitting device, wherein a transparent conductive film is formed, an insulating film made of an organic resin material is formed on the transparent conductive film, and the surface of the insulating film is wiped with a wiping material. A method for manufacturing a light-emitting device. 18. A method for manufacturing a light emitting device, wherein an anode is formed, an insulating film made of an organic resin material is formed on the anode, and the surface of the insulating film is wiped with a wiping material. A method for manufacturing a light-emitting device. 19. The method according to claim 17, wherein
A method for manufacturing a light emitting device, wherein the surface is flattened by the wiping. 20. The method according to claim 17, wherein
The method for manufacturing a light emitting device, wherein the wiping material is a PVA-based porous body. 21. The method according to claim 17, wherein
A method for manufacturing a light-emitting device, comprising: wiping the surface with a cleaning liquid and the wiping material. 22. The method according to claim 17, wherein
A method for manufacturing a light-emitting device, wherein the surface of the insulating film is rubbed with the cleaning material. 23. The method according to claim 17, wherein
When the contact angle with water before wiping on the surface is smaller than 90 °, the contact angle with water after wiping is larger than the contact angle with water before wiping, and 90 °.
The method for manufacturing a light-emitting device, wherein the angle is smaller than 0 ° 24. The method according to claim 17, wherein
The method for manufacturing a light-emitting device, wherein the insulating film is formed with a thickness of 1 to 50 nm. 25. The method according to claim 17, wherein
A method for manufacturing a light-emitting device, wherein the insulating film is made of acrylic, polyimide, or polyamide. 26. A method for manufacturing an active matrix light emitting device having a plurality of TFTs on a substrate, wherein a plurality of TFTs are formed on the substrate, and a first insulating film made of an organic resin material is formed on the TFTs. A second insulating film made of an inorganic insulating material is formed on the first insulating film, a transparent conductive film is formed on the second insulating film, and an organic resin is formed on the transparent conductive film. Forming a third insulating film made of a material,
A method for manufacturing a light-emitting device, comprising: wiping the surface of the third insulating film with a wiping material. 27. A method for manufacturing an active matrix light emitting device having a plurality of TFTs on a substrate, wherein a plurality of TFTs are formed on the substrate, and a first insulating film made of an organic resin material is formed on the TFTs. Forming a second insulating film made of an inorganic insulating material on the first insulating film, forming an anode on the second insulating film, and forming a third made of an organic resin material on the anode. A method for manufacturing a light-emitting device, comprising forming an insulating film and wiping the surface of the third insulating film with a wiping material. 28. The method according to claim 26, wherein
A method for manufacturing a light emitting device, wherein the surface is flattened by the wiping. 29. The method according to claim 26, wherein
The method for manufacturing a light-emitting device, wherein the organic resin material is acrylic, polyimide, or polyamide. 30. In claim 26 or claim 27,
The method for manufacturing a light-emitting device, wherein the inorganic insulating material is silicon oxide, silicon nitride, silicon nitride oxide, silicon oxynitride, aluminum nitride, aluminum nitride oxide, or aluminum oxynitride. 31. The method according to claim 26 or 27,
The method for manufacturing a light emitting device, wherein the wiping material is a PVA-based porous body. 32. In claim 26 or claim 27,
A method for manufacturing a light-emitting device, comprising: wiping the transparent conductive film with a cleaning liquid and the wiping material. 33. The method according to claim 26, wherein
A method for manufacturing a light-emitting device, wherein the surface of the third insulating film is rubbed with the wiping material. 34. In claim 26 or claim 27,
The method for manufacturing a light-emitting device, wherein the third insulating film is formed with a thickness of 1 to 50 nm. 35. The method according to claim 26, wherein
A method for manufacturing a light-emitting device, wherein the third insulating film is made of acrylic, polyimide, or polyamide. 36. The method according to claim 26, wherein
When the contact angle with water before wiping on the surface is smaller than 90 °, the contact angle with water after wiping is larger than the contact angle with water before wiping, and 90 °.
The method for manufacturing a light-emitting device, wherein the angle is smaller than 0 ° 37. A method for manufacturing an active matrix light emitting device having a plurality of TFTs on a substrate, wherein a plurality of TFTs are formed on the substrate, and a first insulating film made of an organic resin material is formed on the TFTs. A second insulating film made of an inorganic insulating material is formed on the first insulating film, a conductive film is formed on the second insulating film, and an organic resin material is formed on the transparent conductive film. Forming a third insulating film, and wiping the surface of the third insulating film with a wiping material. 38. The method for manufacturing a light-emitting device according to claim 37, wherein the conductive film is a cathode. 39. The method according to claim 26, wherein the plurality of TFTs include: a first step of forming a semiconductor layer on a substrate; a second step of forming an insulating film on the semiconductor layer; A third step of forming a conductive layer on the insulating film, a fourth step of selectively etching the conductive layer to form a conductive layer having a first tapered shape, and after the fourth step A fifth step of doping the semiconductor layer with an impurity element of one conductivity type; and a sixth step of selectively etching the conductive layer having the first tapered shape to form a conductive layer having the second tapered shape. And a seventh step of doping the semiconductor layer with an impurity element of one conductivity type after the sixth step. The concentration of the impurity element of one conductivity type doped in the seventh step is: In the fifth step The method for manufacturing a semiconductor device, characterized in that is lower than the concentration of the impurity element imparting one conductivity type to Doping.