JP2002314131A5 - - Google Patents

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Publication number
JP2002314131A5
JP2002314131A5 JP2001111621A JP2001111621A JP2002314131A5 JP 2002314131 A5 JP2002314131 A5 JP 2002314131A5 JP 2001111621 A JP2001111621 A JP 2001111621A JP 2001111621 A JP2001111621 A JP 2001111621A JP 2002314131 A5 JP2002314131 A5 JP 2002314131A5
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JP
Japan
Prior art keywords
nitride semiconductor
group iii
iii nitride
thin film
translucent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001111621A
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English (en)
Japanese (ja)
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JP2002314131A (ja
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Publication date
Application filed filed Critical
Priority to JP2001111621A priority Critical patent/JP2002314131A/ja
Priority claimed from JP2001111621A external-priority patent/JP2002314131A/ja
Publication of JP2002314131A publication Critical patent/JP2002314131A/ja
Publication of JP2002314131A5 publication Critical patent/JP2002314131A5/ja
Pending legal-status Critical Current

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JP2001111621A 2001-04-10 2001-04-10 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子 Pending JP2002314131A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001111621A JP2002314131A (ja) 2001-04-10 2001-04-10 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001111621A JP2002314131A (ja) 2001-04-10 2001-04-10 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2002314131A JP2002314131A (ja) 2002-10-25
JP2002314131A5 true JP2002314131A5 (https=) 2005-01-20

Family

ID=18963191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001111621A Pending JP2002314131A (ja) 2001-04-10 2001-04-10 透光性電極及びその製造方法並びにそれを用いたｉｉｉ族窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JP2002314131A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4411871B2 (ja) * 2003-06-17 2010-02-10 日亜化学工業株式会社 窒化物半導体発光素子
CN100428504C (zh) * 2003-11-06 2008-10-22 厦门市三安光电科技有限公司 一种半导体器件及其制备方法
TW200529464A (en) * 2004-02-27 2005-09-01 Super Nova Optoelectronics Corp Gallium nitride based light-emitting diode structure and manufacturing method thereof
JP2005327817A (ja) 2004-05-12 2005-11-24 Toshiba Corp 放射線検出器
JP2006100475A (ja) * 2004-09-29 2006-04-13 Toyoda Gosei Co Ltd 半導体発光素子
KR100703091B1 (ko) * 2005-09-08 2007-04-06 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
JP2007180326A (ja) * 2005-12-28 2007-07-12 Showa Denko Kk 発光装置
JP2007258376A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
US20080197378A1 (en) * 2007-02-20 2008-08-21 Hua-Shuang Kong Group III Nitride Diodes on Low Index Carrier Substrates
JP2008300421A (ja) * 2007-05-29 2008-12-11 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族窒化物半導体の製造方法およびｉｉｉ−ｖ族窒化物半導体
JP5474292B2 (ja) * 2007-11-06 2014-04-16 シャープ株式会社 窒化物半導体発光ダイオード素子
KR100960280B1 (ko) * 2008-12-02 2010-06-04 주식회사 에피밸리 3족 질화물 반도체 발광소자

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