JP2000332293A5 - - Google Patents

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Publication number
JP2000332293A5
JP2000332293A5 JP1999140945A JP14094599A JP2000332293A5 JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5 JP 1999140945 A JP1999140945 A JP 1999140945A JP 14094599 A JP14094599 A JP 14094599A JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5
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JP
Japan
Prior art keywords
iii
light emitting
emitting device
nitride layer
group
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Application number
JP1999140945A
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English (en)
Japanese (ja)
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JP2000332293A (ja
JP4583523B2 (ja
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Priority to JP14094599A priority Critical patent/JP4583523B2/ja
Priority claimed from JP14094599A external-priority patent/JP4583523B2/ja
Publication of JP2000332293A publication Critical patent/JP2000332293A/ja
Publication of JP2000332293A5 publication Critical patent/JP2000332293A5/ja
Application granted granted Critical
Publication of JP4583523B2 publication Critical patent/JP4583523B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP14094599A 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 Expired - Lifetime JP4583523B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000332293A JP2000332293A (ja) 2000-11-30
JP2000332293A5 true JP2000332293A5 (https=) 2006-03-23
JP4583523B2 JP4583523B2 (ja) 2010-11-17

Family

ID=15280477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14094599A Expired - Lifetime JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Country Status (1)

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JP (1) JP4583523B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
CN102918663B (zh) * 2010-03-01 2015-06-17 同和电子科技有限公司 半导体器件及其生产方法
KR102055758B1 (ko) 2012-07-11 2019-12-13 루미리즈 홀딩 비.브이. Iii-질화물 구조체들에서의 나노파이프 결함들의 감소 또는 제거
CN110350056B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 一种led外延层生长方法
CN112670378A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法

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