JP2000332293A5 - - Google Patents

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Publication number
JP2000332293A5
JP2000332293A5 JP1999140945A JP14094599A JP2000332293A5 JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5 JP 1999140945 A JP1999140945 A JP 1999140945A JP 14094599 A JP14094599 A JP 14094599A JP 2000332293 A5 JP2000332293 A5 JP 2000332293A5
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JP
Japan
Prior art keywords
iii
light emitting
emitting device
nitride layer
group
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Application number
JP1999140945A
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English (en)
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JP4583523B2 (ja
JP2000332293A (ja
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Priority to JP14094599A priority Critical patent/JP4583523B2/ja
Priority claimed from JP14094599A external-priority patent/JP4583523B2/ja
Publication of JP2000332293A publication Critical patent/JP2000332293A/ja
Publication of JP2000332293A5 publication Critical patent/JP2000332293A5/ja
Application granted granted Critical
Publication of JP4583523B2 publication Critical patent/JP4583523B2/ja
Anticipated expiration legal-status Critical
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【特許請求の範囲】
【請求項１】
Ｍｇ、Ｚｎを含有しない膜厚１μｍ以上のＩＩＩ−Ｖ族窒化物層上に、ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層を有し、前記ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層上に発光素子構造を有することを特徴とするＩＩＩ−Ｖ族窒化物半導体発光素子。
【請求項２】
ＩＩＩ−Ｖ族窒化物半導体発光素子の製造方法において、基板上に基板温度７００℃以下のバッファ層を成長させ、前記バッファ層上にＭｇ、Ｚｎを含有しない１μｍ以上のＩＩＩ−Ｖ族窒化物層、ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層を順次成長させ、前記ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層上に素子構造を成長させることを特徴とするＩＩＩ−Ｖ族窒化物半導体発光素子の製造方法。
【請求項３】
前記ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層上の半導体発光素子は、前記ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層に近い側にｎ型層を有することを特徴とする請求項１に記載のＩＩＩ−Ｖ族窒化物半導体発光素子。
【請求項４】
前記ＭｇもしくはＺｎドープＩＩＩ−Ｖ族窒化物層半導体発光素子は、発光素子構造と基板を含み、該基板に近い側にｎ型層を形成させることを特徴とする請求項２に記載の
ＩＩＩ−Ｖ族窒化物半導体発光素子の製造方法。
JP14094599A 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法 Expired - Lifetime JP4583523B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14094599A JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000332293A JP2000332293A (ja) 2000-11-30
JP2000332293A5 true JP2000332293A5 (ja) 2006-03-23
JP4583523B2 JP4583523B2 (ja) 2010-11-17

Family

ID=15280477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14094599A Expired - Lifetime JP4583523B2 (ja) 1999-05-21 1999-05-21 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP4583523B2 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948720B2 (ja) * 2001-08-29 2012-06-06 シャープ株式会社 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
JP4852174B2 (ja) * 2010-03-01 2012-01-11 Ｄｏｗａエレクトロニクス株式会社 半導体素子およびその製造方法
KR102281726B1 (ko) * 2012-07-11 2021-07-26 루미리즈 홀딩 비.브이. Iii-질화물 구조체들에서의 나노파이프 결함들의 감소 또는 제거
CN110350056B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 一种led外延层生长方法
CN112670378A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法

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