JP2002314052A - Element transfer method, element arraying method using the same, and manufacturing method of image display device - Google Patents

Element transfer method, element arraying method using the same, and manufacturing method of image display device

Info

Publication number
JP2002314052A
JP2002314052A JP2001112401A JP2001112401A JP2002314052A JP 2002314052 A JP2002314052 A JP 2002314052A JP 2001112401 A JP2001112401 A JP 2001112401A JP 2001112401 A JP2001112401 A JP 2001112401A JP 2002314052 A JP2002314052 A JP 2002314052A
Authority
JP
Japan
Prior art keywords
substrate
adhesive resin
resin layer
transfer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001112401A
Other languages
Japanese (ja)
Other versions
JP3994681B2 (en
Inventor
Kunihiko Hayashi
邦彦 林
Yoshiyuki Yanagisawa
喜行 柳澤
Toshiaki Iwabuchi
寿章 岩渕
Hiroshi Oba
央 大庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001112401A priority Critical patent/JP3994681B2/en
Priority to PCT/JP2002/003549 priority patent/WO2002084631A1/en
Priority to KR1020027016821A priority patent/KR100853410B1/en
Priority to US10/297,872 priority patent/US6872635B2/en
Priority to TW091107199A priority patent/TW546721B/en
Publication of JP2002314052A publication Critical patent/JP2002314052A/en
Priority to US11/023,834 priority patent/US7195687B2/en
Priority to US11/079,815 priority patent/US7205214B2/en
Priority to US11/079,780 priority patent/US7205213B2/en
Priority to US11/079,742 priority patent/US7205212B2/en
Priority to US11/551,971 priority patent/US7763139B2/en
Application granted granted Critical
Publication of JP3994681B2 publication Critical patent/JP3994681B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

PROBLEM TO BE SOLVED: To surely and efficiently transfer only an object at high precision, without affecting other components. SOLUTION: An element transfer method is provided where elements arrayed on a first substrate are selectively transferred onto a second substrate in which an adhesive resin layer is formed. Laser light is projected to a rear surface side of the second substrate so that the adhesive resin layer of the second substrate is selectively heated, and the adhesive resin layer is cure so that an element which is to be transferred is bonded to the second substrate. When the laser light is projected to a rear surface side of a substrate to heat the adhesive resin layer at that part directly or through an element or wire, the adhesive resin layer at the heated part selectively provides adhesive strength. By curing it, only an element which is to be transferred is selectively transferred onto the second substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体発光素子な
どの素子を転写する素子の転写方法に関するものであ
り、さらには、この転写方法を応用して微細加工された
素子をより広い領域に転写する素子の配列方法および画
像表示装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for transferring an element such as a semiconductor light-emitting element, and more particularly, to transferring a finely processed element to a wider area by applying this transfer method. The present invention relates to a method for arranging elements and a method for manufacturing an image display device.

【０００２】[0002]

【従来の技術】発光素子をマトリクス状に配列して画像
表示装置に組み上げる場合には、従来、液晶表示装置
（ＬＣＤ：Liquid Crystal Display）やプラズマディス
プレイパネル（ＰＤＰ：Plasma Display Panel）のよう
に基板上に直接素子を形成するか、あるいは発光ダイオ
ードディスプレイ（ＬＥＤディスプレイ）のように単体
のＬＥＤパッケージを配列することが行われている。例
えば、ＬＣＤ、ＰＤＰの如き画像表示装置においては、
素子分離ができないために、製造プロセスの当初から各
素子はその画像表示装置の画素ピッチだけ間隔を空けて
形成することが通常行われている。2. Description of the Related Art When assembling an image display apparatus by arranging light emitting elements in a matrix, conventionally, a substrate such as a liquid crystal display (LCD) or a plasma display panel (PDP) is used. An element is directly formed thereon, or a single LED package is arranged like a light emitting diode display (LED display). For example, in an image display device such as an LCD and a PDP,
Since the elements cannot be separated, each element is usually formed at intervals of the pixel pitch of the image display device from the beginning of the manufacturing process.

【０００３】一方、ＬＥＤディスプレイの場合には、Ｌ
ＥＤチップをダイシング後に取り出し、個別にワイヤー
ボンドもしくはフリップチップによるバンプ接続により
外部電極に接続し、パッケージ化されることが行われて
いる。この場合、パッケージ化の前もしくは後に画像表
示装置としての画素ピッチに配列されるが、この画素ピ
ッチは素子形成時の素子のピッチとは無関係とされる。On the other hand, in the case of an LED display, L
ED chips are taken out after dicing, individually connected to external electrodes by wire bonding or flip-chip bump connection, and packaged. In this case, the pixels are arranged at the pixel pitch as an image display device before or after packaging, but this pixel pitch is irrelevant to the element pitch at the time of element formation.

【０００４】発光素子であるＬＥＤ（発光ダイオード）
は高価である為、１枚のウエハから数多くのＬＥＤチッ
プを製造することによりＬＥＤを用いた画像表示装置を
低コストにできる。すなわち、ＬＥＤチップの大きさを
従来約３００μｍ角のものを数十μｍ角のＬＥＤチップ
にして、それを接続して画像表示装置を製造すれば画像
表示装置の価格を下げることができる。An LED (light emitting diode) as a light emitting element
Is expensive, so that by manufacturing a large number of LED chips from one wafer, an image display device using LEDs can be reduced in cost. That is, if an LED chip having a size of about 300 μm square is replaced by an LED chip having a size of several tens of μm square, and the LED chip is connected to manufacture an image display apparatus, the price of the image display apparatus can be reduced.

【０００５】そこで各素子を集積度高く形成し、各素子
を広い領域に転写などによって離間させながら移動さ
せ、画像表示装置などの比較的大きな表示装置を構成す
る技術が有り、例えば米国特許第5438241号に記載され
る薄膜転写法や、特開平１１-１４２８７８号に記載さ
れる表示用トランジスタアレイパネルの形成方法などの
技術が知られている。米国特許第5438241号では基板上
に密に形成した素子が粗に配置し直される転写方法が開
示されており、接着剤付きの伸縮性基板に素子を転写し
た後、各素子の間隔と位置をモニターしながら伸縮性基
板がＸ方向とＹ方向に伸張される。そして伸張された基
板上の各素子が所要のディスプレイパネル上に転写され
る。また、特開平１１-１４２８７８号に記載される技
術では、第１の基板上の液晶表示部を構成する薄膜トラ
ンジスタが第２の基板上に全体転写され、次にその第２
の基板から選択的に画素ピッチに対応する第３の基板に
転写する技術が開示されている。Therefore, there is a technique of forming a relatively large display device such as an image display device by forming each element with a high degree of integration and moving each element in a wide area while separating them by transfer or the like, for example, US Pat. No. 5,432,811. There are known techniques such as a thin film transfer method described in Japanese Unexamined Patent Application Publication No. Hei 11-142787 and a method for forming a transistor array panel for display described in Japanese Patent Application Laid-Open No. 11-142878. U.S. Pat.No. 5,438,241 discloses a transfer method in which elements formed densely on a substrate are coarsely rearranged, and after transferring the elements to a stretchable substrate with an adhesive, the distance and position of each element are determined. The stretchable substrate is stretched in the X and Y directions while monitoring. Then, each element on the stretched substrate is transferred onto a required display panel. In the technique described in Japanese Patent Application Laid-Open No. H11-142878, a thin film transistor constituting a liquid crystal display portion on a first substrate is entirely transferred onto a second substrate, and then the second thin film transistor is transferred to the second substrate.
A technique of selectively transferring a substrate from a third substrate to a third substrate corresponding to a pixel pitch is disclosed.

【０００６】[0006]

【発明が解決しようとする課題】上述のような転写技術
により画像表示装置を製造する場合、転写対象となる素
子のみが選択的に、且つ確実に転写される必要がある。
また、効率的な転写、精度の良い転写も要求される。微
細な電子部品や電子デバイス、さらにはそれらをプラス
チックのような絶縁体に埋め込んだ電子部品を実装基板
上に搭載する方法としては、熱可塑性樹脂を接着剤とし
て用いる方法が一般的である。例えば、実装基板の必要
箇所に熱可塑性樹脂を塗布し、その上に電子部品を置
く。その後、基板ごと加熱して、接着剤を軟化させてそ
の後冷却して基板に固定する。あるいは、基板全面に熱
可塑性樹脂を塗布して、その上に電子部品を置いて、基
板ごと加熱する。接着剤を軟化させ、その後冷却して固
定する。エッチングやプラズマ処理によって露出してい
る接着剤を除去して同様な構造を得る方法も知られてい
る。When an image display device is manufactured by the above-described transfer technique, it is necessary to selectively and surely transfer only elements to be transferred.
In addition, efficient transfer and accurate transfer are required. As a method of mounting a fine electronic component or electronic device, or an electronic component in which they are embedded in an insulator such as plastic, on a mounting substrate, a method of using a thermoplastic resin as an adhesive is generally used. For example, a thermoplastic resin is applied to necessary portions of a mounting board, and electronic components are placed thereon. Thereafter, the entire substrate is heated to soften the adhesive, and then cooled and fixed to the substrate. Alternatively, a thermoplastic resin is applied to the entire surface of the substrate, electronic components are placed thereon, and the entire substrate is heated. The adhesive is softened and then cooled and fixed. There is also known a method of removing the exposed adhesive by etching or plasma treatment to obtain a similar structure.

【０００７】しかしながら、このような方法を用いた場
合、電子部品を置くときには１つづつ置いていく作業が
必要になり、極めて煩雑であるばかりか、基板の全面加
熱による他の部品の位置ずれや剥離なども問題になる。
例えば、供給源の部品をそのままの配置で全て基板に配
置する場合、基板から基板に転写するという方法が可能
である。熱可塑性樹脂を用いる場合、全面を高周波、も
しくは雰囲気にさらし加熱して、供給源の基板に対する
接着力よりも強い接着力を発生させて基板側に転写す
る。However, when such a method is used, it is necessary to place electronic components one by one when placing them, which is not only complicated, but also causes misalignment of other components due to overall heating of the substrate. Peeling also becomes a problem.
For example, when all the components of the supply source are arranged on the substrate in the same arrangement, a method of transferring from the substrate to the substrate is possible. In the case of using a thermoplastic resin, the entire surface is exposed to a high frequency or atmosphere and heated to generate an adhesive force stronger than the adhesive force of the supply source to the substrate, and is transferred to the substrate side.

【０００８】これを応用して、転写したい部品と転写し
たくない部品を選択的に転写することも可能であるが、
既存の技術では所望の部品のみを加熱することが困難で
あり、実用にはなっていない。また、既存の全面加熱の
場合、余分な部分に熱可塑性樹脂を塗布すると加熱時に
流動性によって部品の設置位置が変わる可能性がある。
したがって、一般的にはあらかじめ部品を置く位置に樹
脂を塗布する必要が生じ、上記煩雑さを解消することは
できない。同様に、供給源から一度電子部品を吸着ヘッ
ドなどを用いて取り出し、基板の上に置くという方法も
考えられるが、吸着ヘッドから基板に固定する場合、全
面加熱を施すと、既に接着されている別の部品が剥離す
る虞れがある。By applying this, it is possible to selectively transfer parts to be transferred and parts not to be transferred.
It is difficult to heat only desired parts with the existing technology, and it is not practical. In addition, in the case of the existing entire heating, if a thermoplastic resin is applied to an extra portion, there is a possibility that the installation position of the component may change due to fluidity during heating.
Therefore, in general, it is necessary to apply a resin to a position where components are to be placed in advance, and the above-mentioned complication cannot be solved. Similarly, a method of once taking out an electronic component from a supply source using a suction head or the like and placing it on a substrate is also conceivable, but when fixing the electronic component from the suction head to the substrate, if the entire surface is heated, it is already adhered. There is a risk that another part will peel off.

【０００９】本発明は、かかる従来の実情に鑑みて提案
されたものであり、基板上の素子のうちの転写対象とな
る素子のみを確実に転写することができ、効率的且つ精
度良く素子を転写することが可能な素子の転写方法を提
供することを目的とし、さらには、素子の配列方法、画
像表示装置の製造方法を提供することを目的とする。The present invention has been proposed in view of such a conventional situation, and it is possible to reliably transfer only the elements to be transferred among the elements on the substrate, and to efficiently and accurately transfer the elements. It is another object of the present invention to provide a method for transferring an element that can be transferred, and to provide a method for arranging elements and a method for manufacturing an image display device.

【００１０】[0010]

【課題を解決するための手段】上述の目的を達成するた
めに、本発明の素子の転写方法は、第１の基板上に配列
された素子を接着樹脂層が形成された第２の基板上に選
択的に転写する素子の転写方法において、第２の基板の
裏面側からレーザ光を照射して第２の基板上の接着樹脂
層を選択的に加熱し、当該接着樹脂層を硬化することに
より転写対象となる素子を第２の基板に接着することを
特徴とするものである。In order to achieve the above-mentioned object, a method of transferring an element according to the present invention comprises the steps of: transferring an element arranged on a first substrate onto a second substrate on which an adhesive resin layer is formed; In the method for selectively transferring an element, a laser beam is irradiated from the back side of the second substrate to selectively heat the adhesive resin layer on the second substrate, thereby curing the adhesive resin layer. In this method, the element to be transferred is bonded to the second substrate.

【００１１】基板の裏面側からレーザ光を照射し、接着
樹脂層を直接、あるいは素子や配線を介して間接的に加
熱すると、加熱された部分の接着樹脂層が選択的に接着
力を発揮する。そして、これを硬化することで、転写対
象となる素子のみが第２の基板上に選択的に転写され
る。このとき、接着樹脂層を選択的に塗布する必要はな
く、また他の部品が剥離したり位置ずれを起こすことも
ない。When the adhesive resin layer is heated directly or indirectly via an element or wiring by irradiating a laser beam from the back side of the substrate, the heated adhesive resin layer selectively exerts an adhesive force. . Then, by curing this, only the element to be transferred is selectively transferred onto the second substrate. At this time, it is not necessary to selectively apply the adhesive resin layer, and there is no possibility that other components are peeled off or displaced.

【００１２】また、本発明の素子の配列方法は、第一基
板上に配列された複数の素子を第二基板上に再配列する
素子の配列方法において、前記第一基板上で前記素子が
配列された状態よりは離間した状態となるように前記素
子を転写して一時保持用部材に該素子を保持させる第一
転写工程と、前記一時保持用部材に保持された前記素子
を樹脂で固める工程と、前記樹脂をダイシングして素子
毎に分離する工程と、前記一時保持用部材に保持され樹
脂で固められた前記素子をさらに離間して前記第二基板
上に転写する第二転写工程を有し、上記第二転写工程
は、第二基板の裏面側からレーザ光を照射して第二基板
上の接着樹脂層を選択的に加熱し、当該接着樹脂層を硬
化することにより転写対象となる素子を第二基板に接着
することを特徴とするものである。Further, according to the method for arranging elements of the present invention, in the element arranging method for rearranging a plurality of elements arranged on a first substrate on a second substrate, the elements may be arranged on the first substrate. A first transfer step of transferring the element so as to be in a state separated from the performed state and holding the element on a temporary holding member, and a step of solidifying the element held by the temporary holding member with resin A step of dicing the resin to separate each element, and a second transfer step of further separating the element held by the temporary holding member and fixed with the resin onto the second substrate. Then, the second transfer step is a transfer target by irradiating a laser beam from the back side of the second substrate to selectively heat the adhesive resin layer on the second substrate, and curing the adhesive resin layer. Bonding the element to the second substrate It is intended.

【００１３】上記方法においては、素子の転写が効率的
且つ確実に行われるので、素子間の距離を大きくする拡
大転写を円滑に実施することができる。In the above method, since the transfer of the elements is performed efficiently and reliably, the enlarged transfer for increasing the distance between the elements can be smoothly performed.

【００１４】さらに、本発明の画像表示装置の製造方法
は、発光素子をマトリクス状に配置した画像表示装置の
製造方法において、前記第一基板上で前記発光素子が配
列された状態よりは離間した状態となるように前記発光
素子を転写して一時保持用部材に該発光素子を保持させ
る第一転写工程と、前記一時保持用部材に保持された前
記発光素子を樹脂で固める工程と、前記樹脂をダイシン
グして発光素子毎に分離する工程と、前記一時保持用部
材に保持され樹脂で固められた前記発光素子をさらに離
間して前記第二基板上に転写する第二転写工程を有し、
上記第二転写工程は、第二基板の裏面側からレーザ光を
照射して第二基板上の接着樹脂層を選択的に加熱し、当
該接着樹脂層を硬化することにより転写対象となる発光
素子を第二基板に接着することを特徴とするものであ
る。Further, in the method for manufacturing an image display device according to the present invention, in the method for manufacturing an image display device in which light-emitting elements are arranged in a matrix, the light-emitting elements are spaced apart from a state in which the light-emitting elements are arranged on the first substrate. A first transfer step of transferring the light emitting element so as to be in a state and holding the light emitting element on a temporary holding member, a step of solidifying the light emitting element held by the temporary holding member with a resin, A step of dicing the light emitting elements and separating the light emitting elements, and a second transfer step of transferring the light emitting elements held by the temporary holding member and fixed with a resin to the second substrate at a further distance,
The second transfer step is to irradiate a laser beam from the back side of the second substrate to selectively heat the adhesive resin layer on the second substrate, and to cure the adhesive resin layer, thereby causing the light emitting element to be transferred. Is adhered to the second substrate.

【００１５】上記画像表示装置の製造方法によれば、上
記転写方法、配列方法によって発光素子がマトリクス状
に配置され、画像表示部分が構成される。したがって、
密な状態すなわち集積度を高くして微細加工を施して作
成された発光素子を、効率よく離間して再配置すること
ができ、生産性が大幅に改善される。According to the method of manufacturing the image display device, the light emitting elements are arranged in a matrix by the transfer method and the arrangement method, and an image display portion is formed. Therefore,
Light emitting elements formed by performing fine processing in a dense state, that is, by increasing the degree of integration can be efficiently rearranged and rearranged, and productivity is greatly improved.

【００１６】[0016]

【発明の実施の形態】以下、本発明を適用した素子の転
写方法、配列方法、及び画像表示装置の製造方法につい
て、図面を参照しながら詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for transferring an element, an arrangement method, and a method for manufacturing an image display device to which the present invention is applied will be described in detail with reference to the drawings.

【００１７】先ず、基本となる素子の転写方法について
説明する。本発明により素子を転写するには、図１
（ａ）に示すように、供給源となるベース基板１上に接
着剤層２を形成し、この上に複数の素子３を配列形成す
る。First, a basic method of transferring an element will be described. To transfer an element according to the present invention, FIG.
As shown in (a), an adhesive layer 2 is formed on a base substrate 1 serving as a supply source, and a plurality of elements 3 are arranged and formed thereon.

【００１８】ここで、上記接着剤層２に、例えば比較的
粘着力の小さい粘着性の樹脂などを用いることにより、
簡単に他の基板に転写することが可能となる。Here, by using, for example, an adhesive resin having a relatively small adhesive force for the adhesive layer 2,
It can be easily transferred to another substrate.

【００１９】また、素子３としては、任意の素子に適用
することができ、例示するならば、発光素子、液晶制御
素子、光電変換素子、圧電素子、薄膜トランジスタ素
子、薄膜ダイオード素子、抵抗素子、スイッチング素
子、微小磁気素子、微小光学素子などを挙げることがで
きる。The element 3 can be applied to any element. For example, a light emitting element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element An element, a micro magnetic element, a micro optical element, and the like can be given.

【００２０】次いで、図１（ｂ）に示すように、このベ
ース基板１と対向して転写の橋渡しとなる一時保持基板
（第１の基板）４を圧着し、この一時保持基板４上に必
要な素子３ａのみを写し取る。Next, as shown in FIG. 1 (b), a temporary holding substrate (first substrate) 4 which is opposed to the base substrate 1 and serves as a bridge for transfer is pressure-bonded, and Only the element 3a is copied.

【００２１】上記一時保持基板４上には、転写対象とな
る素子３ａに対応して、選択的に接着剤層５が形成され
ており、この接着剤層５の粘着力を先のベース基板１上
の接着剤層２の粘着力よりも大きくしておけば、素子３
ａを簡単に転写することができる。図１（ｃ）は、一時
保持基板４をベース基板１から剥がし取った状態を示す
もので、選択的に形成された接着剤層５上に素子３ａが
転写されている。An adhesive layer 5 is selectively formed on the temporary holding substrate 4 corresponding to the element 3a to be transferred, and the adhesive force of the adhesive layer 5 is applied to the base substrate 1. If the adhesive strength of the adhesive layer 2 above is made larger, the element 3
a can be easily transferred. FIG. 1C shows a state in which the temporary holding substrate 4 has been peeled off from the base substrate 1, and the element 3 a has been transferred onto the selectively formed adhesive layer 5.

【００２２】次に、図１（ｄ）に示すように、この素子
３ａを写し取った一時保持基板４を転写基板（第２の基
板）６と対向させて圧着し、素子３ａを転写基板６側へ
と移行する。なお、上記転写基板６の表面には、全面に
接着樹脂層７が形成されており、また、他の部品８が既
に固定されている。接着樹脂層７は、例えば、熱可塑性
接着樹脂を塗布することにより形成されている。また、
上記転写基板６は、素子３ａの転写時にレーザ光をこの
転写基板６の裏面側から照射する必要があるので、光透
過性を有することが好ましい。Next, as shown in FIG. 1D, the temporary holding substrate 4 on which the element 3a is copied is pressed against the transfer substrate (second substrate) 6 and the element 3a is pressed against the transfer substrate 6 side. Move to. Note that an adhesive resin layer 7 is formed on the entire surface of the transfer substrate 6, and other components 8 are already fixed. The adhesive resin layer 7 is formed, for example, by applying a thermoplastic adhesive resin. Also,
Since the transfer substrate 6 needs to irradiate a laser beam from the back surface side of the transfer substrate 6 at the time of transferring the element 3a, it is preferable that the transfer substrate 6 has light transmittance.

【００２３】転写に際しては、上記転写基板６に一時保
持基板４を重ね合わせた後、転写基板６の裏面側からレ
ーザ光Ｌを照射し、上記接着樹脂層７を選択的に軟化
し、その後、冷却固化することによって素子３ａを接着
樹脂層７に固定する。At the time of transfer, after the temporary holding substrate 4 is overlaid on the transfer substrate 6, a laser beam L is irradiated from the back side of the transfer substrate 6 to selectively soften the adhesive resin layer 7. The element 3a is fixed to the adhesive resin layer 7 by cooling and solidifying.

【００２４】例えば、図２に示すように、転写基板６の
裏面側からレーザ光Ｌを照射し、転写対象となる素子３
ａが接する部分の接着樹脂層７のみを選択的に加熱す
る。すると、熱可塑性接着樹脂からなる接着樹脂層７の
加熱領域Ｈのみが軟化して素子３ａに対して接着力を発
揮する。その後、レーザ光の照射を止め、上記加熱領域
Ｈを冷却硬化すれば、素子３ａは、接着樹脂層７によっ
て転写基板６に固定される。For example, as shown in FIG. 2, a laser beam L is irradiated from the back side of the transfer
Only the portion of the adhesive resin layer 7 in contact with a is selectively heated. Then, only the heating region H of the adhesive resin layer 7 made of a thermoplastic adhesive resin is softened and exerts an adhesive force on the element 3a. After that, when the irradiation of the laser beam is stopped and the above-mentioned heating area H is cooled and hardened, the element 3 a is fixed to the transfer substrate 6 by the adhesive resin layer 7.

【００２５】このとき、他の部品８を接着固定する接着
樹脂層７にはレーザ光が照射されず、したがって、この
部分の接着樹脂層７が軟化して部品８が剥離したり、位
置ずれを起こしたりすることはない。At this time, the adhesive resin layer 7 for bonding and fixing the other parts 8 is not irradiated with the laser beam. Therefore, the adhesive resin layer 7 in this part is softened and the parts 8 are peeled off or misaligned. It does not wake up.

【００２６】上記接着樹脂層７の加熱は、上記の例で
は、接着樹脂層７に直接レーザ光を照射することにより
行ったが、接着樹脂層７のレーザ光Ｌに対する吸収が少
なく、大部分が透過してしまって接着樹脂層７をレーザ
光で直接加熱することが難しい場合などには、図３に示
すように、接着樹脂層７を透過したレーザ光Ｌを転写対
象となる素子３ａに照射し、これを加熱することにより
間接的に接着樹脂層７を加熱することも可能である。In the above example, the heating of the adhesive resin layer 7 was performed by directly irradiating the adhesive resin layer 7 with a laser beam. In a case where it is difficult to directly heat the adhesive resin layer 7 with a laser beam due to transmission, for example, as shown in FIG. 3, the laser beam L transmitted through the adhesive resin layer 7 is irradiated to the element 3a to be transferred. However, it is also possible to indirectly heat the adhesive resin layer 7 by heating it.

【００２７】転写対象となる素子３ａにレーザ光Ｌを照
射し、接着樹脂層７と接する部分Ｈを加熱すれば、その
熱が接着樹脂層７に伝わってこれを軟化する。後は、こ
れを冷却硬化すれば、素子３ａは接着樹脂層７によって
転写基板６に固定される。When the element 3a to be transferred is irradiated with a laser beam L to heat a portion H in contact with the adhesive resin layer 7, the heat is transmitted to the adhesive resin layer 7 to soften it. After that, if this is cooled and cured, the element 3a is fixed to the transfer substrate 6 by the adhesive resin layer 7.

【００２８】あるいは、転写基板６上に配線が形成され
ている場合には、これをレーザ照射によって加熱し、接
着樹脂層７を間接的に加熱することも可能である。Alternatively, when wiring is formed on the transfer substrate 6, it can be heated by laser irradiation, and the adhesive resin layer 7 can be heated indirectly.

【００２９】図４は、転写基板６上に配線パターン９が
形成され、この上に素子３ａを転写する例を示すもので
ある。通常、素子３ａに対応して、当該素子３ａと回路
とを接続するための配線パターン９が形成されている。
配線パターン９は、銅やアルミニウムなどの金属からな
り、レーザ光Ｌにより容易に加熱することができる。FIG. 4 shows an example in which a wiring pattern 9 is formed on a transfer substrate 6 and the element 3a is transferred thereon. Usually, a wiring pattern 9 for connecting the element 3a and a circuit is formed corresponding to the element 3a.
The wiring pattern 9 is made of a metal such as copper or aluminum, and can be easily heated by the laser light L.

【００３０】そこで、図４に示すように、素子３ａに対
応して設けられた配線パターン９にレーザ光Ｌを照射
し、素子３ａに対応する領域Ｈを加熱する。すると、そ
の熱が接着樹脂層７に伝わってこれを軟化する。後は同
様であり、これを冷却硬化すれば、素子３ａは接着樹脂
層７によって転写基板６に固定される。Then, as shown in FIG. 4, the wiring pattern 9 provided corresponding to the element 3a is irradiated with laser light L to heat a region H corresponding to the element 3a. Then, the heat is transmitted to the adhesive resin layer 7 to soften it. The same applies to the rest. If this is cooled and cured, the element 3a is fixed to the transfer substrate 6 by the adhesive resin layer 7.

【００３１】なお、上記図２〜図４に示す加熱は、それ
ぞれ単独で行っても良いし、あるいはレーザ光Ｌの照射
により、これらが複合して最終的に接着樹脂層７が加
熱、軟化されるようにしてもよい。The heating shown in FIGS. 2 to 4 may be performed independently, or may be combined by irradiation of laser light L to finally heat and soften the adhesive resin layer 7. You may make it.

【００３２】上記レーザ光照射による加熱軟化及び冷却
による硬化を経て、素子３ａを接着樹脂層７により転写
基板６に固着した後、一時保持基板４を剥離する。After the element 3a is fixed to the transfer substrate 6 by the adhesive resin layer 7 after the heating and softening by the laser beam irradiation and the curing by the cooling, the temporary holding substrate 4 is peeled off.

【００３３】これにより、転写対象となる素子３ａが転
写基板６上に転写されるが、この状態では接着樹脂層７
が全面に形成されたままである。As a result, the element 3a to be transferred is transferred onto the transfer substrate 6. In this state, the adhesive resin layer 7
Remains on the entire surface.

【００３４】そこで、図１（ｅ）に示すようにエッチン
グを施し、接着樹脂層７の余分な部分を除去して選択転
写プロセスを完了する。これにより、図１（ｆ）に示す
ような素子３ａが部品８間に選択転写された転写基板６
を得ることができる。Therefore, as shown in FIG. 1E, etching is performed to remove an extra portion of the adhesive resin layer 7, thereby completing the selective transfer process. As a result, the transfer substrate 6 on which the elements 3a as shown in FIG.
Can be obtained.

【００３５】上述のように、レーザ光を用いることによ
って、接着樹脂層７のごく狭い部分を短時間で加熱する
ことが可能となり、隣接して既に接着された部品８を固
着している接着樹脂層７にまで熱を伝えることがないた
め、これら隣接して接着された部品８の固着状態に影響
が及ぶことはなく、選択的に素子３ａを転写することが
可能となる。As described above, by using a laser beam, it is possible to heat a very narrow portion of the adhesive resin layer 7 in a short time, and to use the adhesive resin for adhering the already bonded component 8 adjacently. Since the heat is not transmitted to the layer 7, the fixing state of the component 8 bonded adjacently is not affected, and the element 3a can be selectively transferred.

【００３６】既存の技術のように全面加熱をすると、他
の部品８を固着する接着樹脂層７まで流動して部品８が
移動する可能性があるが、本発明では、そのような事態
を回避することが可能である。また、接着樹脂層７を塗
布形成する場合、少量を素子３ａを置く部分にのみ選択
的に塗布するなどの必要がなく、全面に均一に塗布すれ
ばよく、プロセスを簡略化することができる。When the entire surface is heated as in the existing technology, there is a possibility that the part 8 moves to the adhesive resin layer 7 to which the other part 8 is fixed. However, in the present invention, such a situation is avoided. It is possible to Further, when the adhesive resin layer 7 is formed by application, it is not necessary to selectively apply a small amount only to a portion where the element 3a is to be placed, but it is sufficient to apply the small amount uniformly over the entire surface, and the process can be simplified.

【００３７】なお、以上の説明においては、接着樹脂層
７を構成する材料として、熱可塑性接着樹脂を例にして
説明したが、熱硬化性接着樹脂でも同様の手法により素
子の選択的転写が可能である。熱硬化性接着樹脂の場合
には、レーザ光の照射により加熱された部分のみが熱硬
化し、素子を固着する。In the above description, a thermoplastic adhesive resin is used as an example of the material constituting the adhesive resin layer 7, but the thermosetting adhesive resin can be used to selectively transfer elements by the same method. It is. In the case of a thermosetting adhesive resin, only the portion heated by the irradiation of the laser beam is thermoset to fix the element.

【００３８】上記の転写方法は、例えばアクティブマト
リクス方式の画像表示装置における素子転写などに応用
すると、極めて有用である。アクティブマトリクス方式
の画像表示装置では、駆動素子であるＳｉトランジスタ
に隣接して、Ｒ，Ｇ，Ｂの発光素子を配置する必要があ
る。これらＲ，Ｇ，Ｂの発光素子は、順次Ｓｉトランジ
スタの近い位置に転写する必要があるが、Ｓｉトランジ
スタは極めて熱伝導が良く、熱が加わると内部回路の破
損につながる。ここで、上記転写方法を利用することに
より、Ｓｉトランジスタに熱が伝わるのを回避すること
ができ、上記不都合を解消することができる。The above transfer method is extremely useful when applied to, for example, element transfer in an active matrix type image display device. In an active matrix type image display device, it is necessary to arrange R, G, and B light emitting elements adjacent to a Si transistor as a driving element. These R, G, and B light emitting elements need to be sequentially transferred to a position close to the Si transistor. However, the Si transistor has extremely good thermal conductivity, and the application of heat leads to breakage of an internal circuit. Here, by using the above-described transfer method, it is possible to prevent heat from being transmitted to the Si transistor, and it is possible to solve the above-described inconvenience.

【００３９】例えば、上記Ｓｉトランジスタの大きさが
５６０μｍ×１６０μｍ×３５μｍ、各発光素子が一辺
５〜１０μｍ程度の小面積であり、接着樹脂にエポキシ
系熱硬化性樹脂を用い、ＹＡＧ２倍レーザ（波長５３２
ｎｍ）を照射する場合、レーザ照射による加熱は１ｎ
秒、冷却は１０ｎ秒程度である。レーザ照射による加熱
時間が４ｎ秒以下であれば、隣接するＳｉトランジスタ
に熱の影響が及ぶことはない。For example, the size of the Si transistor is 560 μm × 160 μm × 35 μm, each light emitting element has a small area of about 5 to 10 μm on a side, and an epoxy thermosetting resin is used as an adhesive resin. 532
nm), heating by laser irradiation is 1n
Second, cooling is about 10 nsec. If the heating time by laser irradiation is 4 nsec or less, the influence of heat on adjacent Si transistors will not be affected.

【００４０】次に、上記転写方法の応用例として、二段
階拡大転写法による素子の配列方法及び画像表示装置の
製造方法について説明する。本例の素子の配列方法およ
び画像表示装置の製造方法は、高集積度をもって第一基
板上に作成された素子を第一基板上で素子が配列された
状態よりは離間した状態となるように一時保持用部材に
転写し、次いで一時保持用部材に保持された前記素子を
さらに離間して第二基板上に転写する二段階の拡大転写
を行う。なお、本例では転写を２段階としているが、素
子を離間して配置する拡大度に応じて転写を三段階やそ
れ以上の多段階とすることもできる。Next, as an application example of the transfer method, a method of arranging elements by a two-step enlargement transfer method and a method of manufacturing an image display device will be described. The method of arranging the elements and the method of manufacturing the image display device of the present example are arranged such that the elements formed on the first substrate with a high degree of integration are separated from the state in which the elements are arranged on the first substrate. A two-stage enlargement transfer is performed in which the image is transferred to the temporary holding member, and then the element held by the temporary holding member is further separated and transferred onto the second substrate. In this example, the transfer is performed in two stages. However, the transfer may be performed in three stages or more stages such as three or more stages in accordance with the degree of enlargement in which the elements are spaced apart.

【００４１】図５はそれぞれ二段階拡大転写法の基本的
な工程を示す図である。まず、図５の(a)に示す第一基
板１０上に、例えば発光素子のような素子１２を密に形
成する。素子を密に形成することで、各基板当たりに生
成される素子の数を多くすることができ、製品コストを
下げることができる。第一基板１０は例えば半導体ウエ
ハ、ガラス基板、石英ガラス基板、サファイヤ基板、プ
ラスチック基板などの種々素子形成可能な基板である
が、各素子１２は第一基板１０上に直接形成したもので
あっても良く、他の基板上で形成されたものを配列した
ものであっても良い。FIG. 5 is a diagram showing the basic steps of the two-step enlargement transfer method. First, elements 12 such as light-emitting elements are densely formed on a first substrate 10 shown in FIG. By forming the elements densely, the number of elements generated per substrate can be increased, and the product cost can be reduced. The first substrate 10 is a substrate on which various elements can be formed, such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate. Each element 12 is formed directly on the first substrate 10. Alternatively, an array of elements formed on another substrate may be used.

【００４２】次に図５の(b)に示すように、第一基板１
０から各素子１２が図中破線で示す一時保持用部材１１
に転写され、この一時保持用部材１１の上に各素子１２
が保持される。ここで隣接する素子１２は離間され、図
示のようにマトリクス状に配される。すなわち素子１２
はｘ方向にもそれぞれ素子の間を広げるように転写され
るが、ｘ方向に垂直なｙ方向にもそれぞれ素子の間を広
げるように転写される。このとき離間される距離は、特
に限定されず、一例として後続の工程での樹脂部形成や
電極パッドの形成を考慮した距離とすることができる。
一時保持用部材１１上に第一基板１０から転写した際に
第一基板１０上の全部の素子が離間されて転写されるよ
うにすることができる。この場合には、一時保持用部材
１１のサイズはマトリクス状に配された素子１２の数
（ｘ方向、ｙ方向にそれぞれ）に離間した距離を乗じた
サイズ以上であれば良い。また、一時保持用部材１１上
に第一基板１０上の一部の素子が離間されて転写される
ようにすることも可能である。Next, as shown in FIG. 5B, the first substrate 1
From 0, each element 12 is a temporary holding member 11 indicated by a broken line in the figure.
Is transferred to the temporary holding member 11, and each element 12
Is held. Here, adjacent elements 12 are separated and arranged in a matrix as shown in the figure. That is, the element 12
Is transferred so as to spread the space between the elements also in the x direction, but is also transferred so as to spread the space between the elements also in the y direction perpendicular to the x direction. The distance to be separated at this time is not particularly limited, and may be, for example, a distance in consideration of formation of a resin portion and formation of an electrode pad in a subsequent step.
When transferring from the first substrate 10 onto the temporary holding member 11, all the elements on the first substrate 10 can be separated and transferred. In this case, the size of the temporary holding member 11 only needs to be equal to or larger than the number obtained by multiplying the number of the elements 12 arranged in the matrix (in the x direction and the y direction) by the separated distance. In addition, it is also possible that some elements on the first substrate 10 are transferred onto the temporary holding member 11 while being separated from each other.

【００４３】このような第一転写工程の後、図５の(c)
に示すように、一時保持用部材１１上に存在する素子１
２は離間されていることから、各素子１２毎に素子周り
の樹脂の被覆と電極パッドの形成が行われる。素子周り
の樹脂の被覆は電極パッドを形成し易くし、次の第二転
写工程での取り扱いを容易にするなどのために形成され
る。電極パッドの形成は、後述するように、最終的な配
線が続く第二転写工程の後に行われるため、その際に配
線不良が生じないように比較的大き目のサイズに形成さ
れるものである。なお、図５の(c)には電極パッドは図
示していない。各素子１２の周りを樹脂１３が覆うこと
で樹脂形成チップ１４が形成される。素子１２は平面
上、樹脂形成チップ１４の略中央に位置するが、一方の
辺や角側に偏った位置に存在するものであっても良い。After such a first transfer step, FIG.
As shown in the figure, the element 1 existing on the temporary holding member 11
Since the elements 2 are separated from each other, resin coating around the elements and formation of electrode pads are performed for each element 12. The resin coating around the element is formed to facilitate the formation of the electrode pad and facilitate the handling in the next second transfer step. Since the electrode pads are formed after the second transfer step following the final wiring, as described later, the electrode pads are formed to have a relatively large size so that wiring defects do not occur. The electrode pads are not shown in FIG. The resin forming chip 14 is formed by covering the periphery of each element 12 with the resin 13. The element 12 is located substantially at the center of the resin-formed chip 14 on a plane, but may be located at a position deviated to one side or a corner.

【００４４】次に、図５の(d)に示すように、第二転写
工程が行われる。この第二転写工程では一時保持用部材
１１上でマトリクス状に配される素子１２が樹脂形成チ
ップ１４ごと更に離間するように第二基板１５上に転写
される。Next, as shown in FIG. 5D, a second transfer step is performed. In the second transfer step, the elements 12 arranged in a matrix on the temporary holding member 11 are transferred onto the second substrate 15 such that the elements 12 together with the resin-formed chips 14 are further separated.

【００４５】この第二転写工程に上記図１に示す転写方
法を応用するが、これについては後ほど詳述する。The transfer method shown in FIG. 1 is applied to the second transfer step, which will be described later in detail.

【００４６】第二転写工程においても、隣接する素子１
２は樹脂形成チップ１４ごと離間され、図示のようにマ
トリクス状に配される。すなわち素子１２はｘ方向にも
それぞれ素子の間を広げるように転写されるが、ｘ方向
に垂直なｙ方向にもそれぞれ素子の間を広げるように転
写される。第二転写工程のよって配置された素子の位置
が画像表示装置などの最終製品の画素に対応する位置で
あるとすると、当初の素子１２間のピッチの略整数倍が
第二転写工程のよって配置された素子１２のピッチとな
る。ここで第一基板１０から一時保持用部材１１での離
間したピッチの拡大率をｎとし、一時保持用部材１１か
ら第二基板１５での離間したピッチの拡大率をｍとする
と、略整数倍の値ＥはＥ＝ｎｘｍであらわされる。拡大
率ｎ、ｍはそれぞれ整数であっても良く、整数でなくと
もＥが整数となる組み合わせ（例えばｎ＝2.4でｍ＝5）
であれば良い。Also in the second transfer step, the adjacent element 1
2 are separated from each other by the resin-formed chips 14 and are arranged in a matrix as shown in the figure. That is, the elements 12 are transferred so as to widen the space between the elements also in the x direction, but are also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. Assuming that the position of the element arranged in the second transfer step is a position corresponding to a pixel of a final product such as an image display device, a substantially integer multiple of the initial pitch between the elements 12 is arranged in the second transfer step. The pitch of the element 12 is obtained. Here, assuming that the enlargement ratio of the pitch separated from the first substrate 10 by the temporary holding member 11 is n, and the enlargement ratio of the pitch separated from the temporary holding member 11 by the second substrate 15 is m, approximately an integral multiple. Is expressed as E = nxm. The enlargement ratios n and m may be integers, respectively, and a combination in which E is an integer even if they are not integers (for example, n = 2.4 and m = 5)
Is fine.

【００４７】第二基板１５上に樹脂形成チップ１４ごと
離間された各素子１２には、配線が施される。この時、
先に形成した電極パッド等を利用して接続不良を極力抑
えながらの配線がなされる。この配線は例えば素子１２
が発光ダイオードなどの発光素子の場合には、ｐ電極、
ｎ電極への配線を含み、液晶制御素子の場合は、選択信
号線、電圧線や、配向電極膜などの配線等を含む。Wiring is applied to each element 12 separated from the second substrate 15 together with the resin forming chip 14. At this time,
Wiring is performed by using the previously formed electrode pad and the like while minimizing poor connection. This wiring is, for example, the element 12
Is a light emitting element such as a light emitting diode,
In the case of a liquid crystal control element, the wiring includes a selection signal line, a voltage line, and a wiring such as an alignment electrode film.

【００４８】図５に示した二段階拡大転写法において
は、第一転写後の離間したスペースを利用して電極パッ
ドや樹脂固めなどを行うことができ、そして第二転写後
に配線が施されるが、先に形成した電極パッド等を利用
して接続不良を極力抑えながらの配線がなされる。従っ
て、画像表示装置の歩留まりを向上させることができ
る。また、本例の二段階拡大転写法においては、素子間
の距離を離間する工程が２工程であり、このような素子
間の距離を離間する複数工程の拡大転写を行うことで、
実際は転写回数が減ることになる。すなわち、例えば、
ここで第一基板１０、１０ａから一時保持用部材１１、
１１ａでの離間したピッチの拡大率を２（ｎ＝２）と
し、一時保持用部材１１、１１ａから第二基板１５での
離間したピッチの拡大率を２（ｍ＝２）とすると、仮に
一度の転写で拡大した範囲に転写しようとしたときで
は、最終拡大率が２×２の４倍で、その二乗の１６回の
転写すなわち第一基板のアライメントを１６回行う必要
が生ずるが、本例の二段階拡大転写法では、アライメン
トの回数は第一転写工程での拡大率２の二乗の４回と第
二転写工程での拡大率２の二乗の４回を単純に加えただ
けの計８回で済むことになる。即ち、同じ転写倍率を意
図する場合においては、（ｎ＋ｍ）２＝ｎ２＋２ｎｍ＋
ｍ２であることから、必ず２ｎｍ回だけ転写回数を減ら
すことができることになる。従って、製造工程も回数分
だけ時間や経費の節約となり、特に拡大率の大きい場合
に有益となる。In the two-stage enlargement transfer method shown in FIG. 5, electrode pads and resin hardening can be performed using the space separated after the first transfer, and wiring is performed after the second transfer. However, wiring is performed using the previously formed electrode pads and the like while minimizing poor connection. Therefore, the yield of the image display device can be improved. Further, in the two-stage enlargement transfer method of the present example, the step of separating the distance between the elements is two steps, and by performing such a plurality of steps of enlargement transfer that separates the distance between the elements,
Actually, the number of transfers is reduced. That is, for example,
Here, the temporary holding member 11, from the first substrate 10, 10a,
Assuming that the enlargement factor of the pitch separated at 11a is 2 (n = 2) and the enlargement factor of the pitch separated at the second substrate 15 from the temporary holding members 11, 11a is 2 (m = 2), it is assumed that once, When the transfer is attempted to be performed in the range enlarged by the transfer, the final enlargement ratio is 4 × 2 × 2, and it is necessary to perform 16 transfers of the square, that is, the alignment of the first substrate 16 times. In the two-stage enlargement transfer method, the number of alignments is a total of eight simply obtained by simply adding four times the square of the enlargement factor 2 in the first transfer step and four times the square of the enlargement rate 2 in the second transfer step. Times. That is, when the same transfer magnification is intended, (n + m) 2 = n 2 +2 nm +
since it is m 2, and thus can reduce the number of transfers only sure 2nm times. Therefore, the number of manufacturing steps can be reduced by the number of times and costs, which is advantageous particularly when the enlargement ratio is large.

【００４９】なお、図５に示した二段階拡大転写法にお
いては、素子１２を例えば発光素子としているが、これ
に限定されず、他の素子例えば液晶制御素子、光電変換
素子、圧電素子、薄膜トランジスタ素子、薄膜ダイオー
ド素子、抵抗素子、スイッチング素子、微小磁気素子、
微小光学素子から選ばれた素子若しくはその部分、これ
らの組み合わせなどであっても良い。In the two-stage enlargement transfer method shown in FIG. 5, the element 12 is, for example, a light emitting element. However, the invention is not limited to this, and other elements such as a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, and a thin film transistor Element, thin-film diode element, resistance element, switching element, micro magnetic element,
An element selected from micro optical elements or a part thereof, a combination thereof, or the like may be used.

【００５０】上記第二転写工程においては、樹脂形成チ
ップとして取り扱われ、一時保持用部材上から第二基板
に転写されるが、この樹脂形成チップについて図６及び
図７を参照して説明する。樹脂形成チップ２０は、離間
して配置されている素子２１の周りを樹脂２２で固めた
ものであり、このような樹脂形成チップ２０は、一時保
持用部材から第二基板に素子２１を転写する場合に使用
できるものである。In the second transfer step, the resin is handled as a resin-formed chip and is transferred from the temporary holding member to the second substrate. The resin-formed chip will be described with reference to FIGS. The resin-formed chip 20 is formed by solidifying the periphery of an element 21 that is spaced apart with a resin 22, and such a resin-formed chip 20 transfers the element 21 from the temporary holding member to the second substrate. It can be used in cases.

【００５１】樹脂形成チップ２０は略平板上でその主た
る面が略正方形状とされる。この樹脂形成チップ２０の
形状は樹脂２２を固めて形成された形状であり、具体的
には未硬化の樹脂を各素子２１を含むように全面に塗布
し、これを硬化した後で縁の部分をダイシング等で切断
することで得られる形状である。The main surface of the resin forming chip 20 is substantially square on a substantially flat plate. The shape of the resin-formed chip 20 is a shape formed by hardening the resin 22. Specifically, an uncured resin is applied to the entire surface so as to include each element 21, and after being cured, an edge portion is formed. Is cut by dicing or the like.

【００５２】略平板状の樹脂２２の表面側と裏面側には
それぞれ電極パッド２３，２４が形成される。これら電
極パッド２３，２４の形成は全面に電極パッド２３，２
４の材料となる金属層や多結晶シリコン層などの導電層
を形成し、フォトリソグラフィー技術により所要の電極
形状にパターンニングすることで形成される。これら電
極パッド２３，２４は発光素子である素子２１のｐ電極
とｎ電極にそれぞれ接続するように形成されており、必
要な場合には樹脂２２にビアホールなどが形成される。Electrode pads 23 and 24 are formed on the front side and the back side of the substantially flat resin 22, respectively. The electrode pads 23, 24 are formed over the entire surface of the electrode pads 23, 2
The conductive layer is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer as a material of No. 4 and patterning it into a required electrode shape by a photolithography technique. These electrode pads 23 and 24 are formed so as to be respectively connected to the p-electrode and the n-electrode of the element 21 which is a light-emitting element. If necessary, a via hole or the like is formed in the resin 22.

【００５３】ここで電極パッド２３，２４は樹脂形成チ
ップ２０の表面側と裏面側にそれぞれ形成されている
が、一方の面に両方の電極パッドを形成することも可能
であり、例えば薄膜トランジスタの場合ではソース、ゲ
ート、ドレインの３つの電極があるため、電極パッドを
３つ或いはそれ以上形成しても良い。電極パッド２３，
２４の位置が平板上ずれているのは、最終的な配線形成
時に上側からコンタクトをとっても重ならないようにす
るためである。電極パッド２３，２４の形状も正方形に
限定されず他の形状としても良い。Here, the electrode pads 23 and 24 are formed on the front side and the back side of the resin forming chip 20, respectively. However, it is also possible to form both electrode pads on one side. Since there are three electrodes, a source, a gate, and a drain, three or more electrode pads may be formed. Electrode pad 23,
The reason why the position of 24 is shifted on the flat plate is to prevent the contacts from being overlapped even when a contact is taken from the upper side at the time of final wiring formation. The shape of the electrode pads 23 and 24 is not limited to a square, but may be another shape.

【００５４】このような樹脂形成チップ２０を構成する
ことで、素子２１の周りが樹脂２２で被覆され平坦化に
よって精度良く電極パッド２３，２４を形成できるとと
もに素子２１に比べて広い領域に電極パッド２３，２４
を延在でき、次の第二転写工程での転写を吸着治具で進
める場合には取り扱いが容易になる。後述するように、
最終的な配線が続く第二転写工程の後に行われるため、
比較的大き目のサイズの電極パッド２３，２４を利用し
た配線を行うことで、配線不良が未然に防止される。By configuring such a resin-formed chip 20, the periphery of the element 21 is covered with the resin 22, and the electrode pads 23 and 24 can be formed with high precision by flattening. 23, 24
When the transfer in the next second transfer step is advanced by the suction jig, the handling becomes easy. As described below,
Since the final wiring is performed after the second transfer step that follows,
By performing the wiring using the relatively large-sized electrode pads 23 and 24, a wiring failure is prevented beforehand.

【００５５】次に、図８に本例の二段階拡大転写法で使
用される素子の一例としての発光素子の構造を示す。図
８の（ａ）が素子断面図であり、図８の（ｂ）が平面図
である。この発光素子はＧａＮ系の発光ダイオードであ
り、たとえばサファイヤ基板上に結晶成長される素子で
ある。このようなＧａＮ系の発光ダイオードでは、基板
を透過するレーザ照射によってレーザアブレーションが
生じ、ＧａＮの窒素が気化する現象にともなってサファ
イヤ基板とＧａＮ系の成長層の間の界面で膜剥がれが生
じ、素子分離を容易なものにできる特徴を有している。Next, FIG. 8 shows the structure of a light-emitting element as an example of an element used in the two-step enlargement transfer method of this embodiment. FIG. 8A is a sectional view of the element, and FIG. 8B is a plan view. This light-emitting element is a GaN-based light-emitting diode, for example, an element to be crystal-grown on a sapphire substrate. In such a GaN-based light-emitting diode, laser ablation occurs due to laser irradiation that passes through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon that GaN nitrogen evaporates, It has a feature that element separation can be easily performed.

【００５６】まず、その構造については、ＧａＮ系半導
体層からなる下地成長層３１上に選択成長された六角錐
形状のＧａＮ層３２が形成されている。なお、下地成長
層３１上には図示しない絶縁膜が存在し、六角錐形状の
ＧａＮ層３２はその絶縁膜を開口した部分にＭＯＣＶＤ
法などによって形成される。このＧａＮ層３２は、成長
時に使用されるサファイヤ基板の主面をＣ面とした場合
にＳ面（１−１０１面）で覆われたピラミッド型の成長
層であり、シリコンをドープさせた領域である。このＧ
ａＮ層３２の傾斜したＳ面の部分はダブルへテロ構造の
クラッドとして機能する。ＧａＮ層３２の傾斜したＳ面
を覆うように活性層であるＩｎＧａＮ層３３が形成され
ており、その外側にマグネシウムドープのＧａＮ層３４
が形成される。このマグネシウムドープのＧａＮ層３４
もクラッドとして機能する。First, as for the structure, a hexagonal pyramid-shaped GaN layer 32 selectively grown on a base growth layer 31 made of a GaN-based semiconductor layer is formed. Note that an insulating film (not shown) exists on the base growth layer 31. The hexagonal pyramid-shaped GaN layer 32 is formed by MOCVD at a portion where the insulating film is opened.
It is formed by a method or the like. This GaN layer 32 is a pyramid-shaped growth layer covered with an S plane (1-101 plane) when the main surface of the sapphire substrate used at the time of growth is a C plane, and is a silicon-doped region. is there. This G
The inclined S-plane portion of the aN layer 32 functions as a double heterostructure cladding. An InGaN layer 33, which is an active layer, is formed so as to cover the inclined S surface of the GaN layer 32, and a magnesium-doped GaN layer 34 is formed outside the InGaN layer 33.
Is formed. This magnesium-doped GaN layer 34
Also function as cladding.

【００５７】このような発光ダイオードには、ｐ電極３
５とｎ電極３６が形成されている。ｐ電極３５はマグネ
シウムドープのＧａＮ層３４上に形成されるＮｉ／Ｐｔ
／ＡｕまたはＮｉ（Ｐｄ）／Ｐｔ／Ａｕなどの金属材料
を蒸着して形成される。ｎ電極３６は前述の図示しない
絶縁膜を開口した部分でＴｉ／Ａｌ／Ｐｔ／Ａｕなどの
金属材料を蒸着して形成される。なお、図１０に示すよ
うに下地成長層３１の裏面側からｎ電極取り出しを行う
場合は、ｎ電極３６の形成は下地成長層３１の表面側に
は不要となる。Such a light emitting diode has a p electrode 3
5 and an n-electrode 36 are formed. The p-electrode 35 is formed of Ni / Pt formed on a magnesium-doped GaN layer 34.
/ Au or a metal material such as Ni (Pd) / Pt / Au. The n-electrode 36 is formed by evaporating a metal material such as Ti / Al / Pt / Au at a portion where the above-mentioned insulating film (not shown) is opened. When the n-electrode is taken out from the back side of the underlying growth layer 31 as shown in FIG. 10, the formation of the n-electrode 36 is not required on the front side of the underlying growth layer 31.

【００５８】このような構造のＧａＮ系の発光ダイオー
ドは、青色発光も可能な素子であって、特にレーザアブ
レーションよって比較的簡単にサファイヤ基板から剥離
することができ、レーザビームを選択的に照射すること
で選択的な剥離が実現される。なお、ＧａＮ系の発光ダ
イオードとしては、平板上や帯状に活性層が形成される
構造であっても良く、上端部にＣ面が形成された角錐構
造のものであっても良い。また、他の窒化物系発光素子
や化合物半導体素子などであっても良い。The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be relatively easily separated from the sapphire substrate by laser ablation, and selectively emits a laser beam. Thereby, selective peeling is realized. Note that the GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or a band, or may have a pyramid structure in which a C-plane is formed at an upper end. Further, other nitride-based light emitting devices, compound semiconductor devices, or the like may be used.

【００５９】次に、図９から図１５までを参照しなが
ら、図５に示す発光素子の配列方法の具体的手法につい
て説明する。発光素子は図８に示したＧａＮ系の発光ダ
イオードを用いている。先ず、図９に示すように、第一
基板４１の主面上には複数の発光ダイオード４２がマト
リクス状に形成されている。発光ダイオード４２の大き
さは約２０μｍ程度とすることができる。第一基板４１
の構成材料としてはサファイヤ基板などのように光ダイ
オード４２に照射するレーザの波長の透過率の高い材料
が用いられる。発光ダイオード４２にはｐ電極などまで
は形成されているが最終的な配線は未だなされておら
ず、素子間分離の溝４２ｇが形成されていて、個々の発
光ダイオード４２は分離できる状態にある。この溝４２
ｇの形成は例えば反応性イオンエッチングで行う。この
ような第一基板４１を一時保持用部材４３に対峙させて
図１０に示すように選択的な転写を行う。Next, a specific method of arranging the light emitting elements shown in FIG. 5 will be described with reference to FIGS. As the light emitting element, a GaN light emitting diode shown in FIG. 8 is used. First, as shown in FIG. 9, a plurality of light emitting diodes 42 are formed in a matrix on the main surface of the first substrate 41. The size of the light emitting diode 42 can be about 20 μm. First substrate 41
A material having a high transmittance with respect to the wavelength of the laser to be irradiated on the photodiode 42, such as a sapphire substrate, is used as the constituent material. Although the light emitting diode 42 is formed up to the p-electrode and the like, the final wiring is not yet formed, a groove 42g for element isolation is formed, and the individual light emitting diodes 42 can be separated. This groove 42
The formation of g is performed by, for example, reactive ion etching. Such a first substrate 41 is opposed to the temporary holding member 43, and selective transfer is performed as shown in FIG.

【００６０】一時保持用部材４３の第一基板４１に対峙
する面には剥離層４４と接着剤層４５が２層になって形
成されている。ここで一時保持用部材４３の例として
は、ガラス基板、石英ガラス基板、プラスチック基板な
どを用いることができ、一時保持用部材４３上の剥離層
４４の例としては、フッ素コート、シリコーン樹脂、水
溶性接着剤（例えばポリビニルアルコール：ＰＶＡ）、
ポリイミドなどを用いることができる。また一時保持用
部材４３の接着剤層４５としては紫外線（ＵＶ）硬化型
接着剤、熱硬化性接着剤、熱可塑性接着剤のいずれかか
らなる層を用いることができる。一例としては、一時保
持用部材４３として石英ガラス基板を用い、剥離層４４
としてポリイミド膜４μｍを形成後、接着剤層４５とし
てのＵＶ硬化型接着剤を約２０μｍ厚で塗布する。On the surface of the temporary holding member 43 facing the first substrate 41, a release layer 44 and an adhesive layer 45 are formed in two layers. Here, as an example of the temporary holding member 43, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used. As an example of the release layer 44 on the temporary holding member 43, fluorine coating, silicone resin, water-soluble resin, or the like can be used. Adhesive (for example, polyvinyl alcohol: PVA),
Polyimide or the like can be used. Further, as the adhesive layer 45 of the temporary holding member 43, a layer made of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the temporary holding member 43 and the release layer 44 is used.
After forming a polyimide film of 4 μm, a UV curable adhesive as the adhesive layer 45 is applied with a thickness of about 20 μm.

【００６１】一時保持用部材４３の接着剤層４５は、硬
化した領域４５ｓと未硬化領域４５ｙが混在するように
調整され、未硬化領域４５ｙに選択転写にかかる発光ダ
イオード４２が位置するように位置合わせされる。硬化
した領域４５ｓと未硬化領域４５ｙが混在するような調
整は、例えばＵＶ硬化型接着剤を露光機にて選択的に２
００μｍピッチでＵＶ露光し、発光ダイオード４２を転
写するところは未硬化でそれ以外は硬化させてある状態
にすればよい。このようなアライメントの後、転写対象
位置の発光ダイオード４２に対しレーザを第一基板４１
の裏面から照射し、当該発光ダイオード４２を第一基板
４１からレーザアブレーションを利用して剥離する。Ｇ
ａＮ系の発光ダイオード４２はサファイヤとの界面で金
属のＧａと窒素に分解することから、比較的簡単に剥離
できる。照射するレーザとしてはエキシマレーザ、高調
波ＹＡＧレーザなどが用いられる。The adhesive layer 45 of the temporary holding member 43 is adjusted so that the cured region 45s and the uncured region 45y are mixed, and the adhesive layer 45 is positioned such that the light emitting diode 42 for selective transfer is located in the uncured region 45y. Be matched. Adjustment such that the cured region 45s and the uncured region 45y coexist is performed, for example, by selectively applying a UV-curable adhesive to an exposure machine.
The portion where the light emitting diode 42 is transferred by UV exposure at a pitch of 00 μm may be uncured and the other portions may be cured. After such alignment, the laser is applied to the light emitting diode 42 at the transfer target position on the first substrate 41.
Then, the light emitting diode 42 is separated from the first substrate 41 by using laser ablation. G
Since the aN-based light-emitting diode 42 is decomposed into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation.

【００６２】このレーザアブレーションを利用した剥離
によって、選択照射にかかる発光ダイオード４２はＧａ
Ｎ層と第一基板４１の界面で分離し、反対側の接着剤層
４５にｐ電極部分を突き刺すようにして転写される。他
のレーザが照射されない領域の発光ダイオード４２につ
いては、対応する接着剤層４５の部分が硬化した領域ｓ
であり、レーザも照射されていないために 一時保持用
部材４３側に転写されることはない。なお、図９では１
つの発光ダイオード４２だけが選択的にレーザ照射され
ているが、ｎピッチ分だけ離間した領域においても同様
に発光ダイオード４２はレーザ照射されているものとす
る。このような選択的な転写によっては発光ダイオード
４２第一基板４１上に配列されている時よりも離間して
一時保持用部材４３上に配列される。By the peeling using the laser ablation, the light emitting diode 42 subjected to the selective irradiation becomes Ga
It is separated at the interface between the N layer and the first substrate 41 and transferred to the adhesive layer 45 on the opposite side so as to pierce the p-electrode portion. With respect to the light emitting diode 42 in a region not irradiated with another laser, a region s where the corresponding adhesive layer 45 is hardened.
Since the laser is not irradiated, it is not transferred to the temporary holding member 43 side. Note that in FIG.
Although only one light emitting diode 42 is selectively irradiated with laser, it is assumed that the light emitting diode 42 is similarly irradiated with laser even in a region separated by n pitches. By such selective transfer, the light emitting diodes 42 are arranged on the temporary holding member 43 at a greater distance than when they are arranged on the first substrate 41.

【００６３】発光ダイオード４２は一時保持用部材４３
の接着剤層４５に保持された状態で、発光ダイオード４
２の裏面がｎ電極側（カソード電極側）になっていて、
発光ダイオード４２の裏面には樹脂（接着剤）がないよ
うに除去、洗浄されているため、図１０に示すように電
極パッド４６を形成すれば、電極パッド４６は発光ダイ
オード４２の裏面と電気的に接続される。The light emitting diode 42 has a temporary holding member 43
The light emitting diode 4 is held by the adhesive layer 45 of FIG.
2 has an n-electrode side (cathode electrode side),
Since the back surface of the light emitting diode 42 is removed and cleaned so that there is no resin (adhesive), if the electrode pad 46 is formed as shown in FIG. Connected to.

【００６４】接着剤層４５の洗浄の例としては酸素プラ
ズマで接着剤用樹脂をエッチング、ＵＶオゾン照射にて
洗浄する。かつ、レーザにてＧａＮ系発光ダイオードを
サファイヤ基板からなる第一基板４１から剥離したとき
には、その剥離面にＧａが析出しているため、そのＧａ
をエッチングすることが必要であり、ＮａＯＨ水溶液も
しくは希硝酸で行うことになる。その後、電極パッド４
６をパターニングする。このときのカソード側の電極パ
ッドは約６０μｍ角とすることができる。電極パッド４
６としては透明電極（ＩＴＯ、ＺｎＯ系など）もしくは
Ｔｉ／Ａｌ／Ｐｔ／Ａｕなどの材料を用いる。透明電極
の場合は発光ダイオードの裏面を大きく覆っても発光を
さえぎることがないので、パターニング精度が粗く、大
きな電極形成ができ、パターニングプロセスが容易にな
る。As an example of cleaning the adhesive layer 45, the resin for the adhesive is etched by oxygen plasma and washed by UV ozone irradiation. When the GaN-based light emitting diode is separated from the first substrate 41 made of a sapphire substrate by laser, Ga is deposited on the separated surface.
Need to be etched, which is performed with an aqueous NaOH solution or diluted nitric acid. Then, the electrode pad 4
6 is patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. Electrode pad 4
As 6, a material such as a transparent electrode (ITO, ZnO-based) or Ti / Al / Pt / Au is used. In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, light emission is not blocked, so that patterning accuracy is coarse, a large electrode can be formed, and the patterning process is facilitated.

【００６５】図１１は一時保持用部材４３から発光ダイ
オード４２を第二の一時保持用部材４７に転写して、ア
ノード電極（ｐ電極）側のビアホール５０を形成した
後、アノード側電極パッド４９を形成し、樹脂からなる
接着剤層４５をダイシングした状態を示している。この
ダイシングの結果、素子分離溝５１が形成され、発光ダ
イオード４２は素子ごとに区分けされたものになる。素
子分離溝５１はマトリクス状の各発光ダイオード４２を
分離するため、平面パターンとしては縦横に延長された
複数の平行線からなる。素子分離溝５１の底部では第二
の一時保持用部材４７の表面が臨む。FIG. 11 shows that the light emitting diode 42 is transferred from the temporary holding member 43 to the second temporary holding member 47 to form a via hole 50 on the anode electrode (p electrode) side. This shows a state in which the formed adhesive layer 45 made of resin is diced. As a result of the dicing, the element isolation grooves 51 are formed, and the light emitting diodes 42 are divided for each element. The element isolation groove 51 separates each of the light emitting diodes 42 in a matrix, so that the planar pattern is composed of a plurality of parallel lines extending vertically and horizontally. The surface of the second temporary holding member 47 faces the bottom of the element isolation groove 51.

【００６６】また、第二の一時保持用部材４７上には剥
離層４８が形成される。この剥離層４８は例えばフッ素
コート、シリコーン樹脂、水溶性接着剤（例えばＰＶ
Ａ）、ポリイミドなどを用いて作成することができる。
第二の一時保持用部材４７は、一例としてプラスチック
基板にＵＶ粘着材が塗布してある、いわゆるダイシング
シートであり、ＵＶが照射されると粘着力が低下するも
のを利用できる。Further, a release layer 48 is formed on the second temporary holding member 47. The release layer 48 is made of, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PV
A), it can be made using polyimide or the like.
The second temporary holding member 47 is, for example, a so-called dicing sheet in which a UV adhesive is applied to a plastic substrate, and a material whose adhesive strength decreases when UV is irradiated can be used.

【００６７】このような剥離層４８を形成した一時保持
部材４７の裏面からエキシマレーザを照射する。これに
より、例えば剥離層４４としてポリイミドを形成した場
合では、ポリイミドと石英基板の界面でポリイミドのア
ブレーションにより剥離が発生して、各発光ダイオード
４２は第二の一時保持部材４７側に転写される。An excimer laser is irradiated from the back surface of the temporary holding member 47 on which the release layer 48 is formed. Thus, for example, when polyimide is formed as the peeling layer 44, peeling occurs due to ablation of polyimide at the interface between the polyimide and the quartz substrate, and each light emitting diode 42 is transferred to the second temporary holding member 47 side.

【００６８】このプロセスの例として、第二の一時保持
用部材４７の表面を酸素プラズマで発光ダイオード４２
の表面が露出してくるまでエッチングする。まずビアホ
ール５０の形成はエキシマレーザ、高調波ＹＡＧレー
ザ、炭酸ガスレーザを用いることができる。このとき、
ビアホールは約３〜７μｍの径を開けることになる。ア
ノード側電極パッドはＮｉ／Ｐｔ／Ａｕなどで形成す
る。ダイシングプロセスは通常のブレードを用いたダイ
シング、２０μｍ以下の幅の狭い切り込みが必要なとき
には上記レーザを用いたレーザによる加工を行う。その
切り込み幅は画像表示装置の画素内の樹脂からなる接着
剤層４５で覆われた発光ダイオード４２の大きさに依存
する。一例として、エキシマレーザにて幅約４０μｍの
溝加工を行い、チップの形状を形成する。As an example of this process, the surface of the second temporary holding member 47 is exposed to oxygen plasma by the light emitting diode 42.
Etch until the surface of the is exposed. First, the via hole 50 can be formed using an excimer laser, a harmonic YAG laser, or a carbon dioxide gas laser. At this time,
The via hole has a diameter of about 3 to 7 μm. The anode electrode pad is formed of Ni / Pt / Au or the like. In the dicing process, dicing using a normal blade is performed, and when a narrow notch having a width of 20 μm or less is required, processing using a laser using the above laser is performed. The cut width depends on the size of the light emitting diode 42 covered with the adhesive layer 45 made of resin in the pixel of the image display device. As an example, a groove having a width of about 40 μm is formed with an excimer laser to form a chip shape.

【００６９】次に、機械的手段を用いて発光ダイオード
４２が第二の一時保持用部材４７から剥離される。図１
２は、第二の一時保持用部材４７上に配列している発光
ダイオード４２を吸着装置５３でピックアップするとこ
ろを示した図である。このときの吸着孔５５は画像表示
装置の画素ピッチにマトリクス状に開口していて、発光
ダイオード４２を多数個、一括で吸着できるようになっ
ている。このときの開口径は、例えば約φ１００μｍで
６００μｍピッチのマトリクス状に開口されて、一括で
約３００個を吸着できる。このときの吸着孔５５の部材
は例えば、Ｎｉ電鋳により作製したもの、もしくはＳＵ
Ｓなどの金属板５２をエッチングで穴加工したものが使
用され、金属板５２の吸着孔５５の奥には、吸着チャン
バ５４が形成されており、この吸着チャンバ５４を負圧
に制御することで発光ダイオード４２の吸着が可能にな
る。発光ダイオード４２はこの段階で樹脂からなる接着
剤層４５で覆われており、その上面は略平坦化されてお
り、このために吸着装置５３による選択的な吸着を容易
に進めることができる。Next, the light emitting diode 42 is separated from the second temporary holding member 47 by using mechanical means. FIG.
2 is a diagram showing that the light emitting diodes 42 arranged on the second temporary holding member 47 are picked up by the suction device 53. At this time, the suction holes 55 are opened in a matrix at the pixel pitch of the image display device, so that a large number of the light emitting diodes 42 can be collectively sucked. The opening diameter at this time is, for example, about φ100 μm, and the openings are formed in a matrix with a pitch of 600 μm, and about 300 pieces can be collectively adsorbed. The member of the suction hole 55 at this time is, for example, one made by Ni electroforming or SU
A metal plate 52 of S or the like is formed by drilling a hole by etching, and a suction chamber 54 is formed behind the suction hole 55 of the metal plate 52. By controlling the suction chamber 54 to a negative pressure, The light emitting diode 42 can be attracted. At this stage, the light emitting diode 42 is covered with an adhesive layer 45 made of resin, and the upper surface thereof is substantially flattened, so that the selective suction by the suction device 53 can be easily promoted.

【００７０】図１３は発光ダイオード４２を第二基板６
０に転写するところを示した図である。この転写に、上
記図１〜図４に示す転写方法を応用する。すなわち、第
二基板６０に装着する際に第二基板６０にあらかじめ接
着剤層５６を塗布しておき、その発光ダイオード４２下
面の接着剤層５６を硬化させ、発光ダイオード４２を第
二基板６０に固着して配列させる。この装着時には、吸
着装置５３の吸着チャンバ５４が圧力の高い状態とな
り、吸着装置５３と発光ダイオード４２との吸着による
結合状態は解放される。FIG. 13 shows that the light emitting diode 42 is mounted on the second substrate 6.
FIG. 7 is a diagram showing a state where the image is transferred to 0. The transfer method shown in FIGS. 1 to 4 is applied to this transfer. That is, when the light emitting diode 42 is mounted on the second substrate 60, the adhesive layer 56 is applied to the second substrate 60 in advance, and the adhesive layer 56 on the lower surface of the light emitting diode 42 is cured. Fix and arrange. At the time of this mounting, the suction chamber 54 of the suction device 53 is in a high pressure state, and the bonded state of the suction device 53 and the light emitting diode 42 by suction is released.

【００７１】ここで、接着剤層５６は熱硬化性接着剤、
熱可塑性接着剤などによって構成されている。Here, the adhesive layer 56 is made of a thermosetting adhesive,
It is composed of a thermoplastic adhesive or the like.

【００７２】発光ダイオード４２が配置される位置は、
一時保持用部材４３、４７上での配列よりも離間したも
のとなる。そのとき接着剤層５６の樹脂を硬化させるエ
ネルギー（レーザ光７３）は第二基板６０の裏面から供
給される。The position where the light emitting diode 42 is arranged is as follows.
It is separated from the arrangement on the temporary holding members 43 and 47. At that time, energy (laser light 73) for curing the resin of the adhesive layer 56 is supplied from the back surface of the second substrate 60.

【００７３】先にも述べたように、第二基板６０の裏面
からレーザ光７３を照射し、転写する樹脂形成チップ
（発光ダイオード４２及び接着剤層４５）に対応する部
分の接着剤層５６のみを加熱する。これにより、接着剤
層５６が熱可塑性接着剤の場合には、その部分の接着剤
層５６が軟化し、その後、冷却硬化することにより樹脂
形成チップが第二基板６０上に固着される。同様に、接
着剤層５６が熱硬化性接着剤の場合にも、レーザ光７３
が照射された部分の接着剤層５６のみが硬化して、樹脂
形成チップが第二基板６０上に固着される。As described above, only the adhesive layer 56 corresponding to the resin forming chip (the light emitting diode 42 and the adhesive layer 45) is irradiated with the laser beam 73 from the back surface of the second substrate 60 and transferred. Heat. As a result, when the adhesive layer 56 is a thermoplastic adhesive, the adhesive layer 56 at that portion is softened, and then cooled and cured to fix the resin-formed chip on the second substrate 60. Similarly, when the adhesive layer 56 is a thermosetting adhesive, the laser beam 73
Only the adhesive layer 56 in the portion irradiated with is cured, and the resin-formed chip is fixed on the second substrate 60.

【００７４】また、第二基板６０上にシャドウマスクと
しても機能する電極層５７を配設し、この電極層５７を
レーザ光７３を照射することにより加熱し、間接的に接
着剤層５６を加熱するようにしてもよい。特に、電極層
５７の画面側の表面すなわち当該画像表示装置を見る人
がいる側の面に黒クロム層５８を形成すれば、画像のコ
ントラストを向上させることができると共に、黒クロム
層５８でのエネルギー吸収率を高くして、選択的に照射
されるレーザ光７３によって接着剤層５６を効率的に加
熱するようにすることができる。An electrode layer 57 also functioning as a shadow mask is provided on the second substrate 60, and the electrode layer 57 is heated by irradiating a laser beam 73 to indirectly heat the adhesive layer 56. You may make it. In particular, if the black chrome layer 58 is formed on the surface of the electrode layer 57 on the screen side, that is, on the side where the viewer of the image display device is present, the contrast of the image can be improved and the black chrome layer 58 By increasing the energy absorption rate, the adhesive layer 56 can be efficiently heated by the laser light 73 that is selectively irradiated.

【００７５】図１４はＲＧＢの３色の発光ダイオード４
２、６１、６２を第二基板６０に配列させ絶縁層５９を
塗布した状態を示す図である。図１２および図１３で用
いた吸着装置５３をそのまま使用して、第二基板６０に
マウントする位置をその色の位置にずらすだけでマウン
トすると、画素としてのピッチは一定のまま３色からな
る画素を形成できる。絶縁層５９としては透明エポキシ
接着剤、ＵＶ硬化型接着剤、ポリイミドなどを用いるこ
とができる。３色の発光ダイオード４２、６１、６２は
必ずしも同じ形状でなくとも良い。図１４では赤色の発
光ダイオード６１が六角錐のＧａＮ層を有しない構造と
され、他の発光ダイオード４２、６２とその形状が異な
っているが、この段階では各発光ダイオード４２、６
１、６２は既に樹脂形成チップとして樹脂からなる接着
剤層４５で覆われており、素子構造の違いにもかかわら
ず同一の取り扱いが実現される。FIG. 14 shows a light emitting diode 4 of three colors of RGB.
It is a figure showing the state where 2, 61 and 62 were arranged on the 2nd substrate 60, and applied insulating layer 59. When the mounting device 53 used in FIGS. 12 and 13 is used as it is and the mounting position on the second substrate 60 is merely shifted to the position of the color, the pixel of three colors is maintained with the pixel pitch kept constant. Can be formed. As the insulating layer 59, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. The light-emitting diodes 42, 61, and 62 of the three colors do not necessarily have to have the same shape. In FIG. 14, the red light emitting diode 61 has a structure without a hexagonal pyramid GaN layer, and has a different shape from the other light emitting diodes 42 and 62.
1 and 62 are already covered with an adhesive layer 45 made of a resin as a resin-formed chip, and the same handling is realized regardless of a difference in element structure.

【００７６】図１５は配線形成工程を示す図である。絶
縁層５９に開口部６５、６６、６７、６８、６９、７０
を形成し、発光ダイオード４２、６１、６２のアノー
ド、カソードの電極パッドと第二基板６０の配線用の電
極層５７を接続する配線６３、６４、７１を形成した図
である。このときに形成する開口部すなわちビアホール
は発光ダイオード４２、６１、６２の電極パッド４６、
４９の面積を大きくしているのでビアホール形状は大き
く、ビアホールの位置精度も各発光ダイオードに直接形
成するビアホールに比べて粗い精度で形成できる。この
ときのビアホールは約６０μｍ角の電極パッド４６、４
９に対し、約φ２０μｍのものを形成できる。また、ビ
アホールの深さは配線基板と接続するもの、アノード電
極と接続するもの、カソード電極と接続するものの３種
類の深さがあるのでレーザのパルス数で制御し、最適な
深さを開口する。その後、保護層を配線上に形成し、画
像表示装置のパネルは完成する。このときの保護層は図
１６の絶縁層５９と同様。透明エポキシ接着剤などの材
料が使用できる。この保護層は加熱硬化し配線を完全に
覆う。この後、パネル端部の配線からドライバーＩＣを
接続して駆動パネルを製作することになる。FIG. 15 is a diagram showing a wiring forming step. Openings 65, 66, 67, 68, 69, 70 in insulating layer 59
And wirings 63, 64, 71 for connecting the anode and cathode electrode pads of the light emitting diodes 42, 61, 62 and the wiring electrode layer 57 of the second substrate 60. The openings, ie, via holes, formed at this time are the electrode pads 46 of the light emitting diodes 42, 61, 62,
Since the area of 49 is large, the shape of the via hole is large, and the positional accuracy of the via hole can be formed with coarser accuracy than the via hole formed directly in each light emitting diode. At this time, the via holes are about 60 μm square electrode pads 46, 4.
In comparison with No. 9, those having a diameter of about 20 μm can be formed. In addition, there are three types of via hole depths, one that connects to the wiring substrate, one that connects to the anode electrode, and one that connects to the cathode electrode. . Thereafter, a protective layer is formed on the wiring, and the panel of the image display device is completed. The protective layer at this time is the same as the insulating layer 59 in FIG. Materials such as a transparent epoxy adhesive can be used. This protective layer is cured by heating and completely covers the wiring. Thereafter, a driver panel is manufactured by connecting a driver IC from the wiring at the end of the panel.

【００７７】上述のような発光素子の配列方法において
は、一時保持用部材４３に発光ダイオード４２を保持さ
せた時点で既に、素子間の距離が大きくされ、その広が
った間隔を利用して比較的サイズの電極パッド４６、４
９などを設けることが可能となる。それら比較的サイズ
の大きな電極パッド４６、４９を利用した配線が行われ
るために、素子サイズに比較して最終的な装置のサイズ
が著しく大きな場合であっても容易に配線を形成でき
る。また、本例の発光素子の配列方法では、発光素子の
周囲が硬化した接着剤層４５で被覆され平坦化によって
精度良く電極パッド４６，４９を形成できるとともに素
子に比べて広い領域に電極パッド４６，４９を延在で
き、次の第二転写工程での転写を吸着治具で進める場合
には取り扱いが容易になる。また、発光ダイオード４２
の一時保持用部材４３への転写には、ＧａＮ系材料がサ
ファイヤとの界面で金属のＧａと窒素に分解することを
利用して、比較的簡単に剥離でき、確実に転写される。
さらに、樹脂形成チップの第二基板への転写（第二転写
工程）は、レーザ光の照射により接着剤層を選択的に加
熱し、硬化することにより行われるので、他の部品の接
着状態に影響を及ぼすことなく転写対象となる樹脂形成
チップのみを確実に転写することができる。In the method of arranging the light emitting elements as described above, the distance between the elements is already increased at the time when the light emitting diodes 42 are held by the temporary holding member 43, and the extended distance is used to make the comparatively large. Size electrode pads 46, 4
9 and the like can be provided. Since wiring using the relatively large-sized electrode pads 46 and 49 is performed, wiring can be easily formed even when the size of the final device is significantly larger than the element size. In the method of arranging the light emitting elements according to the present embodiment, the periphery of the light emitting element is covered with the cured adhesive layer 45, and the electrode pads 46 and 49 can be formed with high accuracy by flattening. , 49 can be extended, and the transfer in the next second transfer step is facilitated when the transfer is performed by a suction jig. The light emitting diode 42
Is transferred to the temporary holding member 43 by using the fact that the GaN-based material is decomposed into metallic Ga and nitrogen at the interface with sapphire.
Further, the transfer of the resin-formed chip to the second substrate (second transfer step) is performed by selectively heating and curing the adhesive layer by irradiating a laser beam. It is possible to reliably transfer only the resin-formed chip to be transferred without affecting.

【００７８】[0078]

【発明の効果】以上の説明からも明らかなように、本発
明の素子の転写方法によれば、レーザ光の選択照射によ
る接着樹脂の選択的硬化により、転写対象となる素子の
みを速やかに第２の基板側に移行し、確実に選択的転写
することが可能である。全面加熱の場合、炉の温度条件
や位置による条件のばらつきが大きいなどの問題がある
が、レーザ加熱の場合は、安定した加熱条件を得ること
が可能であり、安定した接着が可能である。また、接着
樹脂は選択的に塗布する必要がなく、全面塗布で良いの
で、プロセスの簡略化が可能である。さらに、他の部品
の固着状態に影響を及ぼすこともなく、剥離や位置ずれ
が生ずることもない。As is clear from the above description, according to the method of transferring an element of the present invention, only the element to be transferred can be quickly removed by selective curing of the adhesive resin by selective irradiation of laser light. 2 to the substrate side, and it is possible to perform selective transfer reliably. In the case of heating the entire surface, there are problems such as large variations in conditions depending on the temperature condition and position of the furnace. However, in the case of laser heating, stable heating conditions can be obtained, and stable bonding can be achieved. In addition, the adhesive resin does not need to be selectively applied, and can be applied over the entire surface, so that the process can be simplified. Further, there is no influence on the fixing state of other components, and no peeling or displacement occurs.

【００７９】また、本発明の素子の配列方法によれば、
上記素子の転写方法を応用しているので、素子の転写を
効率的、確実に行うことができ、素子間の距離を大きく
する拡大転写を円滑に実施することが可能である。Further, according to the element arrangement method of the present invention,
Since the transfer method of the element is applied, the transfer of the element can be performed efficiently and reliably, and the enlarged transfer for increasing the distance between the elements can be smoothly performed.

【００８０】同様に、本発明の画像表示装置の製造方法
によれば、密な状態すなわち集積度を高くして微細加工
を施して作成された発光素子を、上記素子の転写方法を
応用して効率よく離間して再配置することができ、した
がって精度の高い画像表示装置を生産性良く製造するこ
とが可能である。Similarly, according to the method of manufacturing an image display device of the present invention, a light-emitting element manufactured by performing fine processing with a high density, that is, with a high degree of integration, is applied by applying the above-described element transfer method. The rearrangement can be efficiently performed while being separated from each other, so that a highly accurate image display device can be manufactured with high productivity.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の転写方法による転写プロセスの一例を
示す概略断面図である。FIG. 1 is a schematic sectional view showing an example of a transfer process according to a transfer method of the present invention.

【図２】レーザ光により接着樹脂層を加熱した様子を示
す模式図である。FIG. 2 is a schematic diagram showing a state in which an adhesive resin layer is heated by a laser beam.

【図３】レーザ光により素子を加熱した様子を示す模式
図である。FIG. 3 is a schematic diagram showing a state in which an element is heated by a laser beam.

【図４】レーザ光により配線パターンを加熱した様子を
示す模式図である。FIG. 4 is a schematic view showing a state in which a wiring pattern is heated by a laser beam.

【図５】素子の配列方法を示す模式図である。FIG. 5 is a schematic view showing a method of arranging elements.

【図６】樹脂形成チップの概略斜視図である。FIG. 6 is a schematic perspective view of a resin-formed chip.

【図７】樹脂軽視絵チップの概略平面図である。FIG. 7 is a schematic plan view of a light-weight resin picture chip.

【図８】発光素子の一例を示す図であって、（ａ）は断
面図、（ｂ）は平面図である。8A and 8B are diagrams illustrating an example of a light-emitting element, in which FIG. 8A is a cross-sectional view and FIG. 8B is a plan view.

【図９】第一転写工程を示す概略断面図である。FIG. 9 is a schematic sectional view showing a first transfer step.

【図１０】電極パッド形成工程を示す概略断面図であ
る。FIG. 10 is a schematic sectional view showing an electrode pad forming step.

【図１１】第二の一時保持用部材への転写後の電極パッ
ド形成工程を示す概略断面図である。FIG. 11 is a schematic cross-sectional view showing an electrode pad forming step after transfer to a second temporary holding member.

【図１２】吸着工程を示す概略断面図である。FIG. 12 is a schematic sectional view showing an adsorption step.

【図１３】第二転写工程を示す概略断面図である。FIG. 13 is a schematic sectional view showing a second transfer step.

【図１４】絶縁層の形成工程を示す概略断面図である。FIG. 14 is a schematic cross-sectional view showing a step of forming an insulating layer.

【図１５】配線形成工程を示す概略断面図である。FIG. 15 is a schematic sectional view showing a wiring forming step.

【符号の説明】[Explanation of symbols]

１ ベース基板 ３ 素子 ４ 一時保持基板（第１の基板） ６ 転写基板（第２の基板） ７ 接着樹脂層、４１ 第一基板 ４２ 発光ダイオード ４３ 一時保持用部材 ４５ 接着剤層 ５６ 接着剤層 ５７ 電極層 ６０ 第二基板 Reference Signs List 1 base substrate 3 element 4 temporary holding substrate (first substrate) 6 transfer substrate (second substrate) 7 adhesive resin layer, 41 first substrate 42 light emitting diode 43 temporary holding member 45 adhesive layer 56 adhesive layer 57 Electrode layer 60 Second substrate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩渕 寿章 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 (72)発明者 大庭 央 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 Ｆターム(参考） 5C094 AA43 AA47 AA48 AA49 BA03 BA25 BA43 CA19 DA12 DB01 DB04 EA04 EA10 FA01 FA10 FB12 FB14 FB15 GB10 JA01 5F110 AA30 BB01 QQ16 5G435 AA17 BB04 EE33 KK05 KK10 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Toshiaki Iwabuchi 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Hiroshi Ohba 6-35-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F term (reference) 5C094 AA43 AA47 AA48 AA49 BA03 BA25 BA43 CA19 DA12 DB01 DB04 EA04 EA10 FA01 FA10 FB12 FB14 FB15 GB10 JA01 5F110 AA30 BB01 QQ16 5G435 AA17 BB04 EE33 KK05 KK10

Claims (12)

【特許請求の範囲】[Claims] 【請求項１】 第１の基板上に配列された素子を接着樹
脂層が形成された第２の基板上に選択的に転写する素子
の転写方法において、第２の基板の裏面側からレーザ光
を照射して第２の基板上の接着樹脂層を選択的に加熱
し、当該接着樹脂層を硬化することにより転写対象とな
る素子を第２の基板に接着することを特徴とする素子の
転写方法。1. An element transfer method for selectively transferring an element arranged on a first substrate onto a second substrate on which an adhesive resin layer is formed, wherein a laser beam is applied from the back side of the second substrate. Irradiating the adhesive resin layer on the second substrate selectively to cure the adhesive resin layer, thereby bonding the element to be transferred to the second substrate. Method. 【請求項２】 上記レーザ光を転写対象となる素子に対
応した位置の接着樹脂層に照射し、当該接着樹脂層を加
熱することを特徴とする請求項１記載の素子の転写方
法。2. The method according to claim 1, wherein the laser light is applied to the adhesive resin layer at a position corresponding to the element to be transferred, and the adhesive resin layer is heated. 【請求項３】 上記レーザ光を転写対象となる素子に照
射して加熱し、当該素子に対応した位置の接着樹脂層を
加熱することを特徴とする請求項１記載の素子の転写方
法。3. The method according to claim 1, wherein the laser light is applied to an element to be transferred and heated to heat an adhesive resin layer at a position corresponding to the element. 【請求項４】 上記レーザ光を第２の基板上の配線に照
射して加熱し、当該配線上の接着樹脂層を加熱すること
を特徴とする請求項１記載の素子の転写方法。4. The method according to claim 1, wherein the laser beam is applied to the wiring on the second substrate and heated to heat the adhesive resin layer on the wiring. 【請求項５】 上記接着樹脂層は、熱可塑性接着樹脂か
らなることを特徴とする請求項１記載の素子の転写方
法。5. The method according to claim 1, wherein the adhesive resin layer is made of a thermoplastic adhesive resin. 【請求項６】 上記接着樹脂層は、熱硬化性接着樹脂か
らなることを特徴とする請求項１記載の素子の転写方
法。6. The method according to claim 1, wherein the adhesive resin layer is made of a thermosetting adhesive resin. 【請求項７】 上記素子は、絶縁性物質に埋め込まれて
いることを特徴とする請求項１記載の素子の転写方法。7. The method according to claim 1, wherein the device is embedded in an insulating material. 【請求項８】 第一基板上に配列された複数の素子を第
二基板上に再配列する素子の配列方法において、前記第
一基板上で前記素子が配列された状態よりは離間した状
態となるように前記素子を転写して一時保持用部材に該
素子を保持させる第一転写工程と、前記一時保持用部材
に保持された前記素子を樹脂で固める工程と、前記樹脂
をダイシングして素子毎に分離する工程と、前記一時保
持用部材に保持され樹脂で固められた前記素子をさらに
離間して前記第二基板上に転写する第二転写工程を有
し、上記第二転写工程は、第二基板の裏面側からレーザ
光を照射して第二基板上の接着樹脂層を選択的に加熱
し、当該接着樹脂層を硬化することにより転写対象とな
る素子を第二基板に接着することを特徴とする素子の配
列方法。8. An element arrangement method for rearranging a plurality of elements arranged on a first substrate on a second substrate, the method comprising: A first transfer step of transferring the element so that the element is held by a temporary holding member, a step of solidifying the element held by the temporary holding member with a resin, and dicing the resin to form an element. A step of separating each element, and a second transfer step of transferring the element, which is held by the temporary holding member and solidified with resin, to the second substrate at a further distance, the second transfer step includes: Irradiating laser light from the back side of the second substrate to selectively heat the adhesive resin layer on the second substrate, and bonding the element to be transferred to the second substrate by curing the adhesive resin layer. A method for arranging elements, comprising 【請求項９】 前記第一転写工程で離間させる距離が前
記第一基板上に配列された素子のピッチの略整数倍にな
っており且つ前記第二転写工程で離間させる距離が前記
第一転写工程で前記一時保持用部材に配列させた素子の
ピッチの略整数倍になっていることを特徴とする請求項
８記載の素子の配列方法。9. A distance separated in the first transfer step is substantially an integral multiple of a pitch of elements arranged on the first substrate, and a distance separated in the second transfer step is the first transfer. 9. The element arranging method according to claim 8, wherein the pitch of the elements arranged on the temporary holding member in the step is substantially an integral multiple of the pitch. 【請求項１０】 前記素子は窒化物半導体を用いた半導
体素子であることを特徴とする請求項８記載の素子の配
列方法。10. The method according to claim 8, wherein the device is a semiconductor device using a nitride semiconductor. 【請求項１１】 前記素子は発光素子、液晶制御素子、
光電変換素子、圧電素子、薄膜トランジスタ素子、薄膜
ダイオード素子、抵抗素子、スイッチング素子、微小磁
気素子、微小光学素子から選ばれた素子若しくはその部
分であることを特徴とする請求項８記載の素子の配列方
法。11. The device according to claim 11, wherein the device is a light emitting device, a liquid crystal control device,
9. The element arrangement according to claim 8, wherein the element is an element selected from a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, a micro optical element, or a part thereof. Method. 【請求項１２】 発光素子をマトリクス状に配置した画
像表示装置の製造方法において、前記第一基板上で前記
発光素子が配列された状態よりは離間した状態となるよ
うに前記発光素子を転写して一時保持用部材に該発光素
子を保持させる第一転写工程と、前記一時保持用部材に
保持された前記発光素子を樹脂で固める工程と、前記樹
脂をダイシングして発光素子毎に分離する工程と、前記
一時保持用部材に保持され樹脂で固められた前記発光素
子をさらに離間して前記第二基板上に転写する第二転写
工程を有し、上記第二転写工程は、第二基板の裏面側か
らレーザ光を照射して第二基板上の接着樹脂層を選択的
に加熱し、当該接着樹脂層を硬化することにより転写対
象となる発光素子を第二基板に接着することを特徴とす
る画像表示装置の製造方法。12. A method of manufacturing an image display device in which light-emitting elements are arranged in a matrix, wherein the light-emitting elements are transferred on the first substrate so as to be separated from a state in which the light-emitting elements are arranged. A first transfer step of holding the light emitting element on the temporary holding member by using a resin, a step of solidifying the light emitting element held by the temporary holding member with a resin, and a step of dicing the resin to separate each light emitting element And a second transfer step of transferring the light-emitting element held by the temporary holding member and solidified with a resin onto the second substrate while further separating the light-emitting element, wherein the second transfer step is performed on the second substrate. A laser light is irradiated from the back side to selectively heat the adhesive resin layer on the second substrate, and the light emitting element to be transferred is bonded to the second substrate by curing the adhesive resin layer. Image display device Construction method.
JP2001112401A 2001-04-11 2001-04-11 Element arrangement method and image display device manufacturing method Expired - Fee Related JP3994681B2 (en)

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JP2001112401A JP3994681B2 (en) 2001-04-11 2001-04-11 Element arrangement method and image display device manufacturing method
PCT/JP2002/003549 WO2002084631A1 (en) 2001-04-11 2002-04-09 Element transfer method, element arrangmenet method using the same, and image display apparatus production method
KR1020027016821A KR100853410B1 (en) 2001-04-11 2002-04-09 Element transfer method, element arrangement method using the same, and image display apparatus production method
US10/297,872 US6872635B2 (en) 2001-04-11 2002-04-09 Device transferring method, and device arraying method and image display unit fabricating method using the same
TW091107199A TW546721B (en) 2001-04-11 2002-04-10 Element transfer method, element arrangement method using the same, and manufacturing method of image display device
US11/023,834 US7195687B2 (en) 2001-04-11 2004-12-22 Device transferring method, and device arraying method and image display unit fabricating method using the same
US11/079,815 US7205214B2 (en) 2001-04-11 2005-03-14 Device transferring method
US11/079,780 US7205213B2 (en) 2001-04-11 2005-03-14 Device transferring method
US11/079,742 US7205212B2 (en) 2001-04-11 2005-03-14 Device transferring method
US11/551,971 US7763139B2 (en) 2001-04-11 2006-10-23 Device transferring method, and device arraying method

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