CN111834262B - Microelectronic element transfer device and microelectronic element transfer method - Google Patents
Microelectronic element transfer device and microelectronic element transfer method Download PDFInfo
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- CN111834262B CN111834262B CN202010723391.5A CN202010723391A CN111834262B CN 111834262 B CN111834262 B CN 111834262B CN 202010723391 A CN202010723391 A CN 202010723391A CN 111834262 B CN111834262 B CN 111834262B
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 230
- 238000000034 method Methods 0.000 title claims abstract description 30
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- 238000005096 rolling process Methods 0.000 claims abstract description 89
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- -1 for example Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
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- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a micro electronic component transferring device and a method thereof. The first conveying part is arranged to output a plurality of microelectronic elements. The second conveying part comprises a first rolling member and a substrate, wherein the substrate is arranged on the first rolling member and moves by rolling of the first rolling member. A plurality of bumps are arranged on the substrate. The light source device is arranged to illuminate the bumps for heating, and the bumps are subjected to phase change. When the micro-electronic components are output from the first conveying part, the connecting force between the micro-electronic components and the first conveying part is smaller than the connecting force between the micro-electronic components and the bumps, and the micro-electronic components are respectively jointed with the bumps.
Description
Technical Field
The present invention relates to a device and a method for transferring a component, and more particularly, to a device and a method for transferring a microelectronic component.
Background
In the process, it is often necessary to transfer the desired micro-device to the target substrate by means of equipment and attach other devices to the substrate. For example, micro light emitting diodes (Micro LEDs) are arranged on a substrate in a mass transfer manner and are electrically connected with bumps (bumps) arranged on the substrate in advance. Today, micro leds on a carrier can be transferred to a substrate by means of an electrostatic force or a magnetic force. However, the number of the micro light emitting diodes transmitted by the above method cannot effectively increase the transmission efficiency due to the limited size of the electrostatic head or the magnetic head, and thus cannot meet the requirement of mass transfer. In addition, since the electronic components are miniaturized to the micrometer level, there is a micro electronic component transferring error (an arrangement position error of the transferred micro electronic component) which is more easily caused by the movement error of the device itself between transferring processes of different times, so a transferring device and a transferring method with high efficiency and high accuracy are needed.
Disclosure of Invention
The invention aims at a miniature electronic element transferring device and a miniature electronic element transferring method, which have high transferring efficiency and good transferring accuracy.
According to an embodiment of the present invention, there is provided a microelectronic element transfer apparatus including a first conveying portion, a second conveying portion, and a light source device. The first conveying part is arranged to output a plurality of microelectronic elements. The second conveying part comprises a first rolling member and a substrate, wherein the substrate is arranged on the first rolling member and moves by rolling of the first rolling member. A plurality of bumps are arranged on the substrate. The light source device is arranged to illuminate the bumps for heating, and the bumps are subjected to phase change. When the micro-electronic components are output from the first conveying part, the connecting force between the micro-electronic components and the first conveying part is smaller than the connecting force between the micro-electronic components and the bumps, and the micro-electronic components are respectively jointed with the bumps.
According to an embodiment of the present invention, there is provided a microelectronic element transfer method including: providing a first conveying part to output a plurality of micro electronic components; the substrate is arranged on the first rolling piece, the substrate is moved by rolling of the first rolling piece, and a plurality of protruding blocks are arranged on the substrate; illuminating the bumps with light from a light source device to heat the bumps so as to generate phase change; and when the micro-electronic components are output from the first conveying part, the connecting force between the micro-electronic components and the first conveying part is smaller than the connecting force between the micro-electronic components and the bumps, and the micro-electronic components are respectively bonded with the bumps so as to be arranged on the substrate.
Based on the above, the microelectronic element transferring apparatus and the microelectronic element transferring method according to the embodiments of the present invention output a plurality of microelectronic elements by using the first conveying portion, convey a plurality of bumps by using the substrate, and heat and change the phases of the bumps by using the light source, so that the microelectronic elements are respectively disposed on the substrate by the bumps, the transfer efficiency of the microelectronic elements from the first conveying portion to the substrate is high, and the transfer accuracy (position accuracy) of the microelectronic elements is good.
Drawings
Fig. 1A is a schematic view of a microelectronic element transfer device in accordance with a first embodiment of the invention;
FIG. 1B is a schematic diagram of a microelectronic device and conductive pads according to an embodiment of the invention;
FIG. 1C is a schematic diagram of a microelectronic device and conductive pads according to an embodiment of the invention;
fig. 2 is a schematic view of a microelectronic element transfer device in accordance with a second embodiment of the invention;
fig. 3A to 3D are schematic views of a microelectronic element transfer device according to a third embodiment of the present invention;
fig. 4 is a schematic view of a microelectronic element transfer device in accordance with a fourth embodiment of the invention;
fig. 5 is a schematic view of a microelectronic element transfer device in accordance with a fifth embodiment of the invention;
fig. 6 is a schematic view of a microelectronic element transfer device in accordance with a sixth embodiment of the invention;
fig. 7 is a schematic view of a microelectronic element transfer device in accordance with a seventh embodiment of the invention;
fig. 8 is a schematic view of a microelectronic element transfer device in accordance with an eighth embodiment of the invention;
fig. 9 is a flowchart of a microelectronic element transfer method according to a ninth embodiment of the invention.
Description of the reference numerals
100. 200, 300, 400, 500, 600, 700, 800: microelectronic element transfer device
110. 210, 310, 410, 510, 610, 710, 810 a first conveying section
120. 320, 420, 520, 620, 720, 820, a second conveying section
121. 211, 311, 321, 411, 421, 521, 611, 621, 711, 721, 811, 821: rolling elements
121A, 211A rolling element axle center
122. 322, 422, 522, 622, 722, 822: substrate
130. 330, 430, 613, 730, 830 light source device
140. 340 micro electronic component
142 semiconductor layer
150. 350, 350A, 350B, 350C, 450, 550, 650, 750, 850 bump
160. 162, 164 conductive pads
212. 312, 412, 612, 712, 812: carrier plate
331. 332, 431, 432, 731, 732, 831, 832 light sources
340F connecting surface
370. 370A, 370B, 370C, 470, 770, 870: connection pad
370F first side
370T second side
723 conveyer belt
790 press-fit piece
823 adhesive layer
823H through hole
900 method for transferring microelectronic element
S901, S902, S903, S904 step
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Referring to fig. 1A, a schematic diagram of a microelectronic element transfer device according to a first embodiment of the present invention is shown. The microelectronic element transfer device 100 includes a first conveying portion 110, a second conveying portion 120, and a light source device 130. The first conveying section 110 is provided to output a plurality of microelectronic elements 140. According to an embodiment of the present invention, the micro-electronic device 140 may be an optoelectronic device, such as a micro-led or other micro-light emitting device. In the present embodiment, as a representative, only a single microelectronic element 140 is shown as being output from the first conveying portion 110. According to an embodiment of the present invention, the first conveying part 110 may be provided with a plurality of output holes to simultaneously output a plurality of microelectronic elements 140. According to another embodiment of the present invention, the first conveying portion 110 may include a conveying belt on which a plurality of microelectronic elements 140 are disposed, and the microelectronic elements 140 may be separated from the conveying belt in batches and output from the first conveying portion 110.
The second conveying unit 120 includes a rolling member 121 and a base plate 122, and the base plate 122 is disposed on the rolling member 121 and moves rightward by rolling of the rolling member 121. Specifically, the rolling element 121 has a rolling element axial center 121A, the rolling element axial center 121A does not move, and the rolling element 121 rolls (or rotates) with respect to the rolling element axial center 121A.
The substrate 122 is provided with a plurality of bumps 150, and the plurality of bumps 150 provided thereon may be arranged in a straight line or a matrix when the substrate 122 is viewed in a plan view. According to an embodiment of the present invention, the first conveying portion 110 may have a plurality of output holes, the plurality of bumps 150 on the substrate 122 are arranged in a matrix form, and the plurality of output holes of the first conveying portion 110 correspond to the matrix form.
The light source device 130 is configured to illuminate the bump 150 on the substrate 122 to heat and change the phase of the bump 150, for example, to soften the bump 150 for subsequent bonding. In the present embodiment, the light source device 130 is, for example, a laser device, and the bump 150 to be heated and softened is precisely aligned by utilizing the spatially precise light emitting characteristic of the light source device 130. In addition, the light source device 130 may further utilize optical elements such as a beam splitter to split the generated light beams to generate a plurality of light beams simultaneously and heat the plurality of bumps 150 simultaneously. According to an embodiment of the invention, the light source device 130 heats the bump 150 to a temperature greater than the glass transition temperature (glass transition temperature, tg) of the bump 150 and less than the melting point (Tm) of the bump 150 to soften the bump 150 to change the phase of the bump 150 between the glass state and the molten liquid state, and to enter a plastic state, a high viscosity state or a rubber state, but not to a temperature greater than the melting point of the bump 150 to avoid overflowing to other bumps 150, but the invention is not limited thereto.
When the micro-electronic components 140 are output from the first conveying portion 110, one or more bumps 150 on the substrate 122 are softened by the light source device 130, and the connection force between the micro-electronic components 140 and the first conveying portion 110 is smaller than the connection force between the micro-electronic components 140 and the bumps 150, so that the micro-electronic components 140 output from the first conveying portion 110 can be respectively bonded with the softened bumps 150 and firmly transferred and arranged on the substrate 122. In addition, the substrate 122 moves rightward along with the rolling of the rolling member 121, so that the light source device 130 heats the different bumps 150, and the heated bumps 150 are further bonded to the microelectronic elements 140 sequentially output from the first conveying portion 110.
According to the present embodiment, the microelectronic element transferring apparatus 100 outputs a plurality of microelectronic elements 140 by using the first conveying portion 110, conveys a plurality of bumps 150 by using the substrate 122, and makes the microelectronic elements 140 join the bumps 150, so as to transfer the microelectronic elements 140 from the first conveying portion 110 to the substrate 122, thereby achieving efficient mass transfer. In addition, the microelectronic element transferring apparatus 100 utilizes the spatially precise light-emitting characteristic of the light source device 130 to precisely heat and soften the bump 150, so that the microelectronic element 140 can be stably disposed on the substrate 122, and the accuracy of mass transfer is improved. Here, the substrate 122 is embodied as a thin film transistor (Thin Film Transistor, TFT) substrate. In other embodiments, the receiving substrate 122 may be a glass substrate, a ceramic substrate, a Semiconductor (Semiconductor) substrate, a Submount, a Complementary Metal Oxide Semiconductor (CMOS) circuit substrate, a liquid crystal on silicon (Liquid Crystal on Silicon, LCOS) substrate, or other substrates with driving units. The bump 150 may also be made of a metal or alloy having a melting point lower than 200 degrees celsius, such as indium, indium bismuth alloy, tin bismuth alloy, lead tin alloy, zinc tin alloy, etc., but not limited thereto, and the microelectronic device 140 is electrically connected to the substrate 122 by the microelectronic device transferring apparatus 100 to complete a micro light emitting device display device (not shown). In other embodiments, the substrate 122 is a wireless carrier, such as a sapphire substrate or a glass substrate, in the bulk transfer process. The bump 150 is made of an organic material, such as an adhesive polymer, for example, epoxy, polyimide, polyester, polyurethane, benzocyclobutene, polyethylene, polypropylene, polyacrylate, or a combination thereof. The microelectronic element 140 is temporarily disposed on the substrate 122 by the microelectronic element transfer apparatus 100 in preparation for subsequent bulk transfer.
In this embodiment, each of the microelectronic elements 140 may further be provided with a conductive pad 160, and according to an embodiment of the invention, the light source device 130 may illuminate the conductive pad 160 to heat and soften the conductive pad 160 when the microelectronic element 140 is not yet output from the first conveying portion 110, and the microelectronic element 140 may be bonded to the bump 150 through the conductive pad 160 when the microelectronic element 140 is output from the first conveying portion 110. It should be noted that the above process of heating and softening the conductive pads 160 with the light source device 130 may be performed on a plurality of conductive pads 160 at the same time, or only one conductive pad 160 is heated and softened at a time, and the specific embodiment may refer to the second embodiment described below. According to an embodiment of the invention, the light source device 130 heats the conductive pad 160 to a temperature range greater than the glass transition temperature (Tg) of the conductive pad 160 and less than the melting point (Tm) of the conductive pad 160 to soften the conductive pad 160, so that the phase change of the conductive pad 160 is between the glass state and the molten liquid state, and is in a plastic state, a high viscosity state or a rubber state, but is not heated to a temperature greater than the melting point of the conductive pad 160 to avoid overflow. Specifically, the conductive pad 160 may be used as the electrode 160 of the microelectronic device 140, and the conductive pad 160 shown in fig. 1B is disposed on the semiconductor layer 142 of the microelectronic device 140, where the microelectronic device 140 is, for example, a vertical microelectronic device 140. However, as shown in fig. 1C, the microelectronic device 140 may be, for example, a horizontal or flip-chip microelectronic device 140, and at least two conductive pads including a first conductive pad 162 and a second conductive pad 164 are electrically connected to a first type semiconductor layer (not shown) and a second type semiconductor layer (not shown) of the flip-chip microelectronic device 140, respectively.
Various implementations of the first conveying section 110 will be presented in the examples below. It should be noted that the following embodiments use the element numbers and part of the content of the foregoing embodiments, where the same numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted. For the description of the omitted parts, reference is made to the foregoing embodiments, and the following embodiments are not repeated.
Referring to fig. 2, a schematic diagram of a microelectronic element transfer device in accordance with a second embodiment of the present invention is shown. The microelectronic element transfer device 200 includes a first conveying section 210, a second conveying section 120, and a light source apparatus 130. The second embodiment is different from the first embodiment in that the first conveying portion 210 includes a rolling member 211 and a carrier plate 212. The carrier 212 is disposed on the rolling element 211, and the plurality of micro electronic components 140 are disposed on the carrier 212. The rolling element 211 has a rolling element axial center 211A, and the rolling element 211 rolls (or rotates) with respect to the rolling element axial center 211A. The light source device 130 irradiates the conductive pads 160 on the micro electronic components 140 respectively to heat and soften the conductive pads 160, and when the micro electronic components 140 are separated from the carrier 212, the micro electronic components 140 are respectively bonded to the bumps 150 on the substrate 122 through the conductive pads 160, so that the micro electronic components 140 are firmly disposed on the substrate 122 and are respectively connected with the bumps 150. According to an embodiment of the present invention, the carrier 212 may include a photo-dissociating material (not shown) disposed between the carrier 212 and the microelectronic element 140, and the adhesion between the part of the carrier 212 and the microelectronic element 140 may be reduced by irradiating the part of the carrier 212 with ultraviolet light or laser light, so that the microelectronic element 140 thereon is separated from the carrier 212. When a photo-dissociating material is used, ultraviolet light is preferably used to avoid overheating during the illumination process from affecting the microelectronic element 140.
Referring to fig. 3A-3D, schematic diagrams of a microelectronic element transfer device according to a third embodiment of the invention are shown. The microelectronic element transfer device 300 includes a first conveying portion 310, a second conveying portion 320, and a light source device 330. The first conveying portion 310 includes a rolling member 311 and a carrier 312, wherein the carrier 312 is flexible, and the carrier 312 conveys the plurality of microelectronic elements 340 along with the rolling of the rolling member 311. The carrier plate 312 may be embodied in particular as a conveyor belt according to an embodiment of the invention. In this embodiment, each of the plurality of microelectronic elements 340 is further provided with a connection pad 370, and the microelectronic elements 340 are respectively disposed on the carrier 312 through the connection pads 370 thereon. According to an embodiment of the present invention, the connection pad 370 may include an organic material such as epoxy, polyimide, polyester, polyurethane, benzocyclobutene, polyethylene, polypropylene, polyacrylate, and a combination thereof, but the present invention is not limited thereto.
The second conveying portion 320 includes a rolling member 321 and a substrate 322, wherein the substrate 322 is a flexible substrate, and the substrate 322 conveys the plurality of bumps 350 along with the rolling of the rolling member 321. The light source device 330 includes a first light source 331 and a second light source 332, wherein the first light source 331 is configured to heat and soften the bumps 350 on the substrate 322, and the second light source 332 is configured in the first conveying portion 310 to heat and change the phase of the connection pads 370 on the micro-electronic devices 340.
As shown in fig. 3A, the second light source 332 heats and softens the connection pad 370, and at the same time, the first light source 331 heats and softens the corresponding bump 350 on the substrate 322, when the microelectronic element 340 and the bump 350 contact each other due to the rolling of the rolling member 311 and the rolling member 321, the connection force between the microelectronic element 340 and the connection pad 370 and the bump 350 is greater than the connection force between the microelectronic element 340 and the connection pad 370 and the carrier 312, so that the microelectronic element 340 is firmly disposed on the substrate 322 in combination with the bump 350. The connection pad 370 may remain on the carrier 312 during the phase change process and not remain on the microelectronic element 340, or may be subsequently removed from the bonding bump 350 of the microelectronic element 340, which is not limited thereto. According to an embodiment of the present invention, the second light source 332 heats the connection pad 370 to a temperature greater than the melting point of the connection pad 370, so that the connection pad 370 becomes soft and molten to be easily detached from the carrier 312, but the present invention is not limited thereto. According to an embodiment of the present invention, each of the microelectronic elements 340 may be provided with a conductive pad opposite to the side provided with the connection pad 370, and the microelectronic elements 340 may be bonded to the bump 350 through the conductive pad.
In this embodiment, each connection pad 370 may include a first surface 370F for connecting with the microelectronic element 340 and a second surface 370T for connecting with the carrier 312, and the area of the first surface 370F is larger than that of the second surface 370T, so that the connection pad 370 can be easily detached from the carrier 312 and detached from the microelectronic element 340 when being bonded. In an embodiment, the area ratio of the second face 370T and the first face 370F is less than 0.9, but the present invention is not limited thereto, and the areas of the first face 370F and the second face 370T may be equally large. Specifically, the first surface 370F may be smaller than the area of the surface 340F connected to the microelectronic element 340, and in one embodiment, the area ratio of the second surface 370T to the first surface 370F is smaller than 0.9, so that the connection pad 370 may be easily detached from the microelectronic element 340.
Referring next to fig. 3B, the arrangement of the plurality of bumps 350 on the substrate 322 is shown in a top view. As shown in fig. 3B, the bumps 350 are arranged in a matrix. According to an embodiment of the present invention, the microelectronic elements 340 on the carrier 312 in the microelectronic element transferring apparatus 300 may also be arranged in the same matrix form, such that the microelectronic elements 340 are correspondingly engaged with the bumps 350.
Referring to fig. 3C, in the present embodiment, the bump 350 may include a bump 350A, a bump 350B, and a bump 350C having various different heights. Specifically, in one embodiment, the plurality of microelectronic elements 340 may be individually bonded to the lowermost bumps 350C on the substrate 322. Then, the next lowest bump 350B is disposed on the substrate 322, and the plurality of micro-electronic devices 340 with another light color are respectively bonded to the second lowest bump 350B on the substrate 322, and finally, the bump 350A is disposed on the substrate 322, and the plurality of micro-electronic devices 340 with another light color are respectively bonded to the highest bump 350A on the substrate 322, so as to avoid the mutual influence when bonding the plurality of micro-electronic devices 340 with light colors. The micro-electronic devices 340 are respectively output to the bump 350A, the bump 350B and the bump 350C on the bonding substrate 322 through the first conveying portion 310, and the micro-electronic devices 340 may include blue micro-leds, green micro-leds, red micro-leds and combinations thereof, but the invention is not limited thereto.
Referring to fig. 3D, connection pad 370 may also include connection pad 370A, connection pad 370B, and connection pad 370C having a variety of different heights. Specifically, in one embodiment, a plurality of microelectronic elements 340 can be disposed on a first face of a plurality of connection pads 370A to respectively engage bumps on the substrate 322. Then, the micro-electronic devices 340 with another color are disposed on the first surfaces of the connection pads 370B with the next highest color to respectively bond the bumps on the substrate 322. Finally, the plurality of micro-electronic devices 340 with the other light color are disposed on the first surfaces of the plurality of connection pads 370C at the highest level to respectively connect the bumps on the substrate 322, so as to avoid the mutual influence when the plurality of micro-electronic devices 340 with the light color are connected. The connection pads 370C and the micro-electronic device 340 are respectively output to the bumps 350 on the bonding substrate 322 through the first conveying portion 310, and the micro-electronic device 340 may include a blue micro-led, a green micro-led, a red micro-led, and combinations thereof, but the invention is not limited thereto.
Referring to fig. 4, there is shown a schematic view of a microelectronic element transfer device in accordance with a fourth embodiment of the invention. The microelectronic element transfer device 400 includes a first conveying portion 410, a second conveying portion 420, and a light source device 430. The first conveying portion 410 includes a rolling element 411 and a carrier 412, wherein the carrier 412 is flexible, and the carrier 412 conveys the plurality of microelectronic elements 340 along with the rolling of the rolling element 411. Each of the plurality of microelectronic elements 340 also has a connection pad 470 disposed thereon, and the microelectronic elements 340 are respectively disposed on the carrier 412 by the connection pads 470 thereon.
The second conveying portion 420 includes a rolling member 421 and a flexible substrate 422, and the substrate 422 conveys the plurality of bumps 450 along with the rolling of the rolling member 421. The light source device 430 includes a first light source 431 and a second light source 432, wherein the first light source 431 is configured to heat and soften the bumps 450 on the substrate 422, and the second light source 432 is configured in the first conveying portion 410 to heat and soften the connection pads 470 on the micro electronic components 340.
The second light source 432 heats and softens the connection pad 470, so that the corresponding microelectronic element 340 is separated from the carrier 412, and the microelectronic element 340 separated from the carrier 412 falls down towards the flexible substrate 422 by gravity and correspondingly engages the bump 450 on the substrate 422, so that the microelectronic element 340 is firmly disposed on the substrate 422. The engagement by gravity can avoid damaging the microelectronic element 340 by excessive pressure upon contact.
Referring to fig. 5, there is shown a schematic view of a microelectronic element transfer device in accordance with a fifth embodiment of the invention. The microelectronic element transfer device 500 includes a first conveying portion 510, a second conveying portion 520, and a light source apparatus 130. The first conveying portion 510 has a chamber 511 and at least one outlet 512, the chamber 511 is filled with a fluid, and the plurality of microelectronic elements 340 are mounted in the chamber 511 and sequentially flow out of the outlet 512 through the fluid.
The second conveying portion 520 includes a rolling member 521 and a flexible substrate 522, and the substrate 522 conveys the plurality of bumps 550 along with the rolling of the rolling member 521. The light source device 130 is arranged to heat and soften the bumps 550 on the substrate 522. According to an embodiment of the present invention, the microelectronic element transfer device 500 may further include an additional light source device (not shown) configured to heat the microelectronic element 340 flowing out of the outlet 512 to accelerate the evaporation of the fluid remaining on the microelectronic element 340.
After flowing out from the outlet 512, the microelectronic element 340 is firmly disposed on the substrate 522 by gravity falling down and engaging the bump 550 on the substrate 522. According to an embodiment of the invention, the bumps 550 may be disposed on the substrate 522 in a matrix form, the first conveying portion 510 has a plurality of outlets 512, the outlets 512 are disposed in the same matrix form, and the microelectronic elements 340 are output from the outlets 512 and engage with the bumps 550 and are firmly disposed on the substrate 522.
Referring to fig. 6, there is shown a schematic view of a microelectronic element transfer device in accordance with a sixth embodiment of the invention. The microelectronic element transfer device 600 includes a first conveying portion 610, a second conveying portion 620, and a light source apparatus 130. The first conveying portion 610 includes a rolling element 611, a carrier 612 and an ultraviolet light device 613, wherein the carrier 612 is flexible and includes a photo-dissociating material, and the light source device 613 is configured to irradiate a local area of the carrier 612 with light, such as ultraviolet light or laser, so as to generate dissociation reaction on the local area of the carrier 612, and generate a change of material characteristics, so that adhesion between the local area and the microelectronic element 340 thereon is reduced. Ultraviolet light is preferably used to avoid overheating during illumination from affecting the microelectronic element 340.
The second conveying portion 620 includes a rolling member 621 and a substrate 622, wherein the substrate 622 is a flexible substrate, and the substrate 622 conveys the plurality of bumps 650 along with the rolling of the rolling member 621. The light source device 130 is arranged to heat and soften the bumps 650 on the substrate 622.
As shown in fig. 6, when the uv light device 613 irradiates the partial region of the carrier 612 with uv light, the adhesion between the microelectronic element 340 and the carrier 612 is reduced. Meanwhile, when the corresponding bump 650 on the substrate 622 is heated and softened by the light source device 130, and the microelectronic element 340 and the bump 650 are in contact with each other due to the rolling of the rolling elements 611 and 621, the adhesion between the microelectronic element 340 and the bump 650 is greater than the adhesion between the microelectronic element 340 and the carrier 612, so that the microelectronic element 340 is bonded to the bump 650 and is firmly disposed on the substrate 622.
Referring to fig. 7, a schematic diagram of a microelectronic element transfer device in accordance with a seventh embodiment of the invention is shown. The microelectronic element transfer device 700 includes a first conveying portion 710, a second conveying portion 720, and a light source apparatus 730. The first conveying unit 710 includes a rolling member 711 and a carrier 712, and the carrier 712 conveys the microelectronic elements 340 along with the rolling of the rolling member 711. In this embodiment, a connection pad 770 is further disposed on each of the plurality of microelectronic elements 340, and the microelectronic elements 340 are disposed on the carrier 712 through the connection pads 770 thereon, respectively.
The second conveying portion 720 includes a rolling member 721, a substrate 722, a conveying belt 723 and a pressing member 790, wherein the substrate 722 is a flexible substrate, the conveying belt 723 conveys a plurality of bumps 750 onto the substrate 722, and the substrate 722 conveys the bumps 750 along with the rolling of the rolling member 721. The light source device 730 includes a first light source 731 and a second light source 732, wherein the first light source 731 is configured to heat and soften the bumps 750 on the substrate 722, and the second light source 732 is configured in the first conveying portion 710 to heat and soften the connection pads 770 on the microelectronic elements 340. According to an embodiment of the present invention, the bump 750 may be generated by a three-dimensional (3D) printer and disposed on the substrate 722, but the present invention is not limited thereto.
As shown in fig. 7, the second light source 732 heats and softens the connection pad 770, and at the same time, the first light source 731 heats and softens the corresponding bump 750 on the substrate 722, when the microelectronic element 340 and the bump 750 are in contact with each other due to the rolling of the rolling elements 711 and 721, the adhesion between the microelectronic element 340 and the connection pad 770 and the bump 750 is greater than the adhesion between the microelectronic element 340 and the connection pad 770 and the carrier 712, so that the microelectronic element 340 and the connection pad 770 are bonded to the bump 750, and then the bonding element 790 is used to bond the connection pad 770, the microelectronic element 340 and the bump 750 to be firmly disposed on the substrate 722. According to an embodiment of the present invention, the pressing member 790 may be a roller (roller), but the present invention is not limited thereto.
Referring to fig. 8, a schematic diagram of a microelectronic element transfer device in accordance with a third embodiment of the invention is shown. The microelectronic element transfer device 800 includes a first conveying portion 810, a second conveying portion 820, and a light source device 830. The first conveying portion 810 includes a rolling member 811 and a carrier plate 812, wherein the carrier plate 812 is flexible, and the carrier plate 812 conveys the plurality of microelectronic elements 340 along with the rolling of the rolling member 811. Each of the plurality of microelectronic elements 340 is further provided with a connection pad 870, and the microelectronic elements 340 are respectively disposed on the carrier plate 812 by the connection pads 870 thereon.
The second conveying portion 820 includes a rolling member 821 and a substrate 822, wherein the substrate 822 is a flexible substrate, and the substrate 822 conveys the plurality of bumps 850 along with the rolling of the rolling member 821.
It should be noted that the substrate 822 is provided with an adhesive layer 823, and the adhesive layer 823 covers the bumps 850. The light source device 830 includes a first light source 831 and a second light source 832, wherein the first light source 831 is configured to burn-out portions of the adhesive layer 823 corresponding to the bumps 850 to burn-out a plurality of through holes 823H such that each of the bumps 850 is exposed from the through holes 823H, and further heat and soften the exposed bumps 850. A second light source 832 may be disposed within the first conveying portion 810 to heat and soften the connection pads 870 on the microelectronic elements 340.
As shown in fig. 8, the second light source 832 heats and softens the connection pad 870, and at the same time, the first light source 831 burns a portion of the adhesive layer 823 to create a through hole 823H and exposes the bump 850 from the through hole 823H, and further heats and softens the exposed bump 850. When the microelectronic element 340 and the bump 850 are in contact with each other due to the rolling of the rolling member 811 and the rolling member 821, the adhesion between the microelectronic element 340 and the connection pad 870 and the bump 850 is greater than the adhesion between the microelectronic element 340 and the connection pad 870 and the carrier 812, such that the microelectronic element 340 and the connection pad 870 are engaged with the bump 850 and firmly disposed on the substrate 322, wherein the width of the through hole 823H is slightly greater than the width of the corresponding microelectronic element 340. In addition, since the first light source 831 burns and melts only a portion of the adhesive layer 823 corresponding to the bump 850, the remaining portion of the adhesive layer 823 is not burned and melted, and the bonded connection pads 870, the microelectronic element 340, and the bump 850 are supported by the remaining portion of the adhesive layer 823 without being skewed, so as to be more firmly disposed on the substrate 822.
Referring to fig. 9, a flowchart of a microelectronic element transfer method according to a ninth embodiment of the invention is shown. The microelectronic element transfer method 900 of the ninth embodiment is applicable to the microelectronic element transfer apparatus of any of the embodiments described above. The microelectronic element transfer method 900 described below will be described in conjunction with the microelectronic element transfer apparatus 100 of fig. 1A as an example.
The microelectronic element transfer method 900 includes: the first conveying section 110 is provided to output the plurality of microelectronic elements 140 (step S901); disposing the substrate 122 on the first rolling member 121, moving the substrate 122 by rolling the first rolling member 121, and disposing the plurality of bumps 150 on the substrate 122 (step S902); illuminating the bumps 150 with the light source device 130 to heat and soften the bumps 150 (step S903); and when the micro-electronic components 140 are output from the first conveying portion 110, the micro-electronic components 140 are respectively bonded to the bumps 150, so as to dispose the micro-electronic components 140 on the substrate 122 (step S904). The details of the microelectronic element transfer method 900 may be referred to the details of the microelectronic element transfer apparatus of the above embodiments, and will not be repeated here.
In summary, the microelectronic element transferring apparatus and the microelectronic element transferring method according to the embodiments of the present invention output a plurality of microelectronic elements by the first conveying portion, convey a plurality of bumps by the substrate, and heat and soften the bumps by the light source, so that the microelectronic elements are respectively disposed on the substrate by the bumps, the transfer efficiency of the microelectronic elements from the first conveying portion to the substrate is high, and the transfer accuracy (position accuracy) of the microelectronic elements is good.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (13)
1. A microelectronic element transfer apparatus, comprising:
a first conveying part including a carrier plate, the first conveying part being configured to output a plurality of microelectronic elements, wherein the plurality of microelectronic elements are respectively disposed on the carrier plate through a plurality of connection pads, each of the plurality of connection pads includes a first face connected to a corresponding one of the plurality of microelectronic elements, and a second face connected to the carrier plate, an area of the first face is larger than an area of the second face, and each of the plurality of microelectronic elements is provided with a conductive connection pad thereon;
a second conveying section including:
a first rolling member; and
a substrate disposed on the first rolling member and moved by rolling of the first rolling member, the substrate being provided with a plurality of bumps; and
a light source device configured to illuminate the plurality of bumps, the plurality of conductive pads, and the plurality of connection pads to heat, wherein the plurality of bumps and the plurality of connection pads change phase, and the plurality of conductive pads are softened to output the plurality of microelectronic elements from the first conveying portion;
when the micro-electronic components are output from the first conveying part, the connection force between the micro-electronic components and the first conveying part is smaller than the connection force between the micro-electronic components and the bumps, and the micro-electronic components are respectively connected with the bumps through the conductive connecting pads.
2. The microelectronic element transfer device of claim 1, wherein the first conveying portion further comprises a second rolling member, the carrier plate being disposed on the second rolling member and conveying the plurality of microelectronic elements by rolling of the second rolling member.
3. The microelectronic element transfer device of claim 1, wherein the carrier plate further comprises a photo-dissociating material, and the light source means irradiates light to the carrier plate to detach the plurality of microelectronic elements from the carrier plate and output from the first conveying section.
4. The microelectronic element transfer device of claim 1, wherein the substrate further comprises an adhesive layer disposed on the substrate and the plurality of bumps, the light source device illuminating the adhesive layer to burn out through holes corresponding to the plurality of bumps in the adhesive layer.
5. The microelectronic element transfer device of claim 1, wherein the plurality of bumps have a plurality of heights.
6. The microelectronic element transfer device of claim 1, wherein the phase change of the plurality of bumps is between glassy to molten.
7. The microelectronic element transfer device of claim 1, wherein the phase change of the plurality of conductive pads is between glassy to molten.
8. A method of transferring a microelectronic element, comprising:
providing a first conveying part to output a plurality of micro electronic components, wherein the first conveying part comprises a carrier plate, and the plurality of micro electronic components are arranged on the carrier plate;
providing a conductive connection pad and a connection pad on each of the plurality of microelectronic elements, wherein the plurality of microelectronic elements are respectively arranged on the carrier via the plurality of connection pads, each of the plurality of connection pads comprises a first face connected with a corresponding one of the plurality of microelectronic elements, and a second face connected with the carrier, and the area of the first face is larger than that of the second face;
arranging a substrate on a first rolling element, and moving the substrate by rolling of the first rolling element, wherein a plurality of protruding blocks are arranged on the substrate;
illuminating the plurality of bumps, the plurality of conductive pads and the plurality of connection pads with a light source device to heat the plurality of bumps, the plurality of conductive pads and the plurality of connection pads, so as to generate phase change, and output the plurality of microelectronic elements from the first conveying part; and
when the plurality of micro-electronic components are output from the first conveying part, the plurality of micro-electronic components are respectively connected with the plurality of bumps, the connecting force between the plurality of micro-electronic components and the first conveying part is smaller than the connecting force between the plurality of micro-electronic components and the plurality of bumps, so that the plurality of micro-electronic components are arranged on the substrate, and when the plurality of micro-electronic components are output from the first conveying part, the plurality of conductive connecting pads are respectively connected between the plurality of micro-electronic components and the plurality of bumps.
9. The microelectronic element transfer method of claim 8, further comprising:
setting a second rolling element; and
the carrier plate is arranged on the second rolling piece, and the plurality of micro electronic elements are conveyed through rolling of the second rolling piece.
10. The microelectronic element transfer method of claim 8, further comprising:
disposing the carrier plate to include a photo-dissociating material; and
and illuminating the carrier plate by the light source device so that the plurality of micro electronic components are separated from the carrier plate and output from the first conveying part.
11. The microelectronic element transfer method of claim 8, further comprising:
an adhesive layer is arranged on the substrate and the plurality of bumps; and
and illuminating the adhesive layer by the light source device so as to burn out through holes corresponding to the plurality of bumps on the adhesive layer.
12. The microelectronic element transfer method of claim 8, further comprising:
the light source device is used for heating the plurality of bumps to a temperature which is larger than the glass transition temperature of the plurality of bumps and smaller than the melting point of the plurality of bumps.
13. The microelectronic element transfer method of claim 8, further comprising:
and heating the plurality of conductive bonding pads to a temperature greater than the glass transition temperature of the plurality of conductive bonding pads and less than the melting point of the plurality of conductive bonding pads by the light source device.
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| TWI771986B (en) * | 2021-04-16 | 2022-07-21 | 友達光電股份有限公司 | A method of manufacturing an electronic device |
| CN113178408A (en) * | 2021-05-28 | 2021-07-27 | 重庆翰博显示科技研发中心有限公司 | Discharging, transferring and positioning device for miniature electronic assembly and working method of discharging, transferring and positioning device |
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