CN110993749B - Mass transfer method of micro light-emitting diode and display panel - Google Patents
Mass transfer method of micro light-emitting diode and display panel Download PDFInfo
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- CN110993749B CN110993749B CN201911250235.5A CN201911250235A CN110993749B CN 110993749 B CN110993749 B CN 110993749B CN 201911250235 A CN201911250235 A CN 201911250235A CN 110993749 B CN110993749 B CN 110993749B
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000012790 adhesive layer Substances 0.000 claims abstract description 47
- 239000000853 adhesive Substances 0.000 claims abstract description 24
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000003292 glue Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920006335 epoxy glue Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The application discloses a huge transfer method of Micro light emitting diodes (Micro LEDs) and a display panel, wherein the method comprises the steps of providing a bearing substrate, wherein a plurality of Micro LED chips arranged in an array are arranged on the bearing substrate; providing a transfer substrate, wherein a first adhesive layer is arranged on the transfer substrate, the first adhesive layer is made of heat-tack-free adhesive, and the first adhesive layer is selectively heated to form a selectively-tacky first adhesive layer; aligning the first adhesive layer which is selectively adhered on the transfer substrate with the bearing substrate, and selectively adhering the Micro LED chip; aligning the transfer substrate adhered with the Micro LED chip to the target substrate, and transferring the adhered Micro LED chip to the target substrate. According to the invention, the heat-loss adhesive is selectively heated, so that the Micro LED chip can be selectively picked up and transferred to the target substrate.
Description
Technical Field
The invention relates to the technical field of display, in particular to a mass transfer method of a micro light-emitting diode and a display panel.
Background
Micro LED (light emitting diode) Micro technology refers to that a traditional LED array and a traditional LED address after Micro are transferred to a circuit substrate in huge quantity to form an ultra-small-pitch LED, and the length of the LED in millimeter level is further Micro-scaled to micron level so as to achieve ultra-high pixel and ultra-high resolution. The Micro LED has the characteristics of self-luminescence without a backlight source, is similar to the OLED, but compared with the OLED, the color of the Micro LED is easier and more accurate to debug, has longer luminescence life and higher brightness, has low packaging requirement, is easier to realize flexible and seamless splicing display, and is a future display with great development potential in the future.
In the preparation process of the Micro LED display panel, how to rapidly transfer a huge amount of Micro LED chips to a circuit substrate is a key difficulty, and in the prior art, the conventional transfer method is to transfer by using intermolecular force. However, this transfer method requires a structural transfer head, which is complicated and expensive to manufacture. How to simply and rapidly carry out the massive transfer of the Micro LED is a difficult point which needs to be solved urgently in the development of the Micro LED display panel.
Disclosure of Invention
The invention provides a mass transfer method of a micro light-emitting diode, which can quickly, simply and conveniently realize mass transfer of the micro light-emitting diode.
In order to solve the above problem, in a first aspect, the present invention provides a method for transferring a bulk of a micro light emitting diode, the method comprising:
s01: providing a bearing substrate, wherein a plurality of micro light-emitting diode chips arranged in an array are arranged on the bearing substrate;
s02: providing a transfer substrate, wherein a first adhesive layer is arranged on the transfer substrate, the first adhesive layer is made of thermal adhesive loss adhesive, the first adhesive layer is selectively heated, an adhesive loss area is formed in a heated area, and an adhesive area is formed in an unheated area, so that the first adhesive layer which is selectively adhered is formed;
s03: aligning the first adhesive layer selectively adhered on the transfer substrate with the bearing substrate, and selectively adhering the plurality of micro light-emitting diode chips;
s04: providing a target substrate, aligning the transfer substrate adhered with the plurality of micro light-emitting diode chips to the target substrate, and transferring the adhered plurality of micro light-emitting diode chips to the target substrate.
Further, a second adhesive layer is further arranged on the bearing substrate, and the plurality of micro light-emitting diode chips are adhered to the second adhesive layer, wherein the viscosity of the second adhesive layer is greater than that of the adhesive losing area in the first adhesive layer and is smaller than that of the adhesive losing area in the first adhesive layer.
Furthermore, a third adhesive layer is further arranged on the target substrate, and the viscosity of the third adhesive layer is greater than that of the viscous area in the first adhesive layer.
Further, in step S01, the method for forming the carrier substrate provided with the plurality of micro light emitting diode chips arranged in an array includes:
providing a substrate, and forming the plurality of micro light-emitting diode chips in array arrangement on the substrate;
aligning the substrate to the bearing substrate, wherein one side of the substrate, on which the plurality of micro light-emitting diode chips arranged in the array are formed, faces the bearing substrate;
and irradiating the substrate base plate by using laser so that the plurality of micro light-emitting diode chips arranged in the array are stripped from the substrate base plate and transferred to the bearing base plate.
Further, the material of the first glue layer is selected from at least one of the following materials: epoxy glue, silicone glue, and polyacrylic glue.
Further, in step S02, the first glue layer is selectively heated by a selective heating head with a specific pattern.
Further, the heating mode of the selective heating head is contact heating or non-contact heating.
Furthermore, a plurality of thin film transistors arranged in an array are arranged on the target substrate, and the plurality of thin film transistors arranged in an array are arranged under the third adhesive layer.
Further, after the adhered micro light emitting diode chip is transferred to the target substrate, the micro light emitting diode chip is heated and pressurized, so that the micro light emitting diode chip is electrically conducted with the corresponding thin film transistor.
On the other hand, the invention also provides a display panel which is a micro light-emitting diode display panel and is prepared by the mass transfer method of the micro light-emitting diode.
Has the advantages that: according to the massive transfer method of the micro light-emitting diode, the layer of the heat-tack reducing adhesive is arranged on the transfer substrate, the heat-tack reducing adhesive is selectively heated through the specific patterned heating head, the viscosity of the preset area of the heat-tack reducing adhesive is greatly reduced, the viscosity of the unheated area is kept unchanged, and therefore the micro light-emitting diode chip can be selectively picked up and transferred to the target substrate.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic text flow chart of a mass transfer method for micro light-emitting diodes according to an embodiment of the present invention;
fig. 2A-2D are schematic structural flow diagrams illustrating a mass transfer method for micro leds according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
An embodiment of the invention provides a mass transfer method for micro light emitting diodes, which is described in detail below with reference to fig. 1 and fig. 2A to 2D.
Specifically, the method for transferring the huge amount of the micro light-emitting diodes comprises the following steps:
s01: referring to fig. 2A, a carrier substrate 30 is provided, on which a plurality of micro led chips 20 are disposed in an array arrangement,
further, the method for forming the carrier substrate 30 provided with the plurality of micro light emitting diode chips 20 arranged in an array includes:
providing a substrate 10, and forming a plurality of micro light-emitting diode chips 20 arranged in an array on the substrate;
aligning the substrate base plate 10 to the bearing base plate 30, wherein one side of the substrate base plate 10, on which the plurality of micro light emitting diode chips 20 arranged in the array are formed, faces the bearing base plate 30;
irradiating the substrate base plate 10 with laser light, so that the plurality of micro light emitting diode chips 20 arranged in the array are peeled off from the substrate base plate and transferred to the bearing base plate 30;
further, a second adhesive layer 301 is disposed on the carrier substrate 30 for fixing the micro led chip 20 peeled from the substrate 10 and assisting in subsequent transfer.
In the conventional technology in the field, it is usually necessary to form micro led chips on a substrate made of a special material, for example, blue and green micro led chips are formed on a sapphire substrate, and red micro led chips are formed on a gaas substrate, however, the formed micro led chips have a large adhesion force with the substrate, and cannot be directly picked up by using a transfer substrate described later, and therefore, a carrier substrate is added as a transition, and the micro led chips are peeled off from the formation substrate by laser irradiation and transferred onto the carrier substrate to realize the subsequent transfer.
S02: referring to fig. 2B, a transfer substrate 40 is provided, a first adhesive layer 401 is disposed on the transfer substrate 40, the first adhesive layer 401 is made of a heat-tack-free adhesive (i.e., after the heat-tack-free adhesive is heated to a certain degree, the viscosity of the heat-tack-free adhesive is greatly reduced), the first adhesive layer 401 is selectively heated, a tack-free area 4012 is formed in a heated area, and a tack area 4011 is formed in an unheated area, so as to form a selectively-tacky first adhesive layer;
the material of the first adhesive layer 401 may be epoxy adhesive, silica gel, or polyacrylic adhesive, so as to achieve the thermal viscosity loss;
the selectively heating the first glue layer 401 includes: a contact heater or a non-contact heater is used to heat a portion of a predetermined area of the first adhesive layer 401.
Specifically, the heater 50 is provided with a heating head 501 with a specific pattern, the heating head 501 is designed at a position where it is not needed to pick up a micro led chip according to design requirements, that is, the heating head 501 corresponds to the debonding area 4012, and the heating mode of the heating head 501 may be contact heating, for example, instantaneous high-temperature heating may be performed on a heating head with a protruding structure; non-contact heating is also possible, for example heating with an infrared laser.
Further, after heating, the formed color of the non-sticking area 4012 is different from that of the sticky area 4011, the color of the non-sticking area 4012 turns yellow, and the color of the sticky area 4011 keeps transparent, so that better alignment in the transfer process can be realized by utilizing the color difference between the non-sticking area 4012 and the sticky area 4011, and high-precision transfer can be realized.
S03: referring to fig. 2C, the first adhesive layer selectively adhered on the transfer substrate 40 is aligned with the carrier substrate 30, and the micro light emitting diode chip 20 is selectively adhered;
specifically, in the transferring process, the first adhesive layer is brought close to and in contact with the micro led chip 20 adhered to the carrier substrate 30, wherein the viscosity of the second adhesive layer 301 on the carrier substrate 30 is greater than the viscosity of the non-adhesion area 4012 in the first adhesive layer and is less than the viscosity of the viscosity area 4011 in the first adhesive layer, so that the micro led chip 20 at the corresponding position is adhered to the viscosity area 4011, the non-adhesion area 4012 cannot be adhered to the micro led chip, and the micro led chip 20 at the corresponding position is still remained on the carrier substrate 30, that is, the micro led chip is selectively picked up through a specific viscosity setting.
S04: referring to fig. 2D, a target substrate 60 is provided, the transfer substrate 40 with the micro led chips 20 attached thereon is aligned with the target substrate 60, the attached micro led chips 20 are transferred onto the target substrate 60,
further, a third glue layer 601 is disposed on the target substrate 60, and similarly, the third glue layer 601 has a larger viscosity than the viscosity of the viscous area 4011 in the first glue layer, so that the transfer is realized.
For example, the target substrate 60 may be an array thin film transistor substrate, that is, a plurality of thin film transistors (not shown) arranged in an array are disposed on the target substrate 60 and under the third glue layer 601, and the thin film transistors correspond to the micro light emitting diode chips one to one, so as to implement driving display.
The third adhesive layer 601 may be made of an anisotropic conductive adhesive or a non-conductive hot melt adhesive, and after the bonded micro led chip 20 is transferred onto the target substrate 60, the bonded micro led chip is heated and pressed to bond, so that the micro led chip 20 is electrically connected to the corresponding thin film transistor.
It can be understood that the above embodiments provide a massive transfer method for micro leds, in an actual micro led panel, multiple transfers are usually required according to the pixel configuration, for example, in a micro led panel with rgb pixel arrangement, the above transfer method is usually required to be repeated to sequentially transfer the red, blue and green micro led chips to the corresponding positions of the target substrate, i.e. complete transfer is achieved.
Another embodiment of the present invention further provides a micro led display panel, which is formed by the mass transfer method of the micro led.
By adopting the mass transfer method of the micro light-emitting diode described in the above embodiment, the viscosity of the predetermined region of the heat-tack adhesive part is greatly reduced, and the viscosity of the unheated region is kept unchanged by arranging a layer of heat-tack adhesive on the transfer substrate and selectively heating the heat-tack adhesive by the specific patterned heater, so that the micro light-emitting diode chip can be selectively picked up and transferred to the target substrate.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
The present invention provides a method for transferring a large amount of micro light emitting diodes and a display panel, which are provided by the embodiments of the present invention, in which a specific example is applied to illustrate the principle and the implementation of the present invention, and the description of the embodiments is only used to help understanding the method and the core concept of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A method for transferring a bulk of a micro Light Emitting Diode (LED), the method comprising:
s01: providing a bearing substrate, wherein a plurality of micro light-emitting diode chips arranged in an array are arranged on the bearing substrate;
s02: providing a transfer substrate, wherein a first adhesive layer is arranged on the transfer substrate, the first adhesive layer is made of thermal adhesive loss adhesive, the first adhesive layer is selectively heated, an adhesive loss area is formed in a heated area, and an adhesive area is formed in an unheated area, so that the first adhesive layer which is selectively adhered is formed;
s03: aligning the first adhesive layer selectively adhered on the transfer substrate with the bearing substrate, and selectively adhering the plurality of micro light-emitting diode chips;
s04: providing a target substrate, aligning the transfer substrate adhered with the plurality of micro light-emitting diode chips to the target substrate, and transferring the adhered plurality of micro light-emitting diode chips to the target substrate.
2. The method of claim 1, wherein a second adhesive layer is further disposed on the carrier substrate, and the plurality of micro led chips are adhered to the second adhesive layer, wherein the second adhesive layer has a viscosity greater than the viscosity of the debonding region of the first adhesive layer and less than the viscosity of the adhesive region of the first adhesive layer.
3. The method of claim 1, wherein a third adhesive layer is disposed on the target substrate, and the third adhesive layer has a viscosity greater than the viscosity of the viscous zone of the first adhesive layer.
4. The method for massively transferring micro light emitting diodes as claimed in claim 1, wherein in step S01, the method for forming the carrier substrate with the plurality of micro light emitting diode chips arranged in an array includes:
providing a substrate, and forming the plurality of micro light-emitting diode chips in array arrangement on the substrate;
aligning the substrate to the bearing substrate, wherein one side of the substrate, on which the plurality of micro light-emitting diode chips arranged in the array are formed, faces the bearing substrate;
and irradiating the substrate base plate by using laser so that the plurality of micro light-emitting diode chips arranged in the array are stripped from the substrate base plate and transferred to the bearing base plate.
5. The method of claim 1, wherein the first glue layer is at least one of the following materials: epoxy glue, silicone glue, and polyacrylic glue.
6. The method of claim 1, wherein in step S02, the first adhesive layer is selectively heated by a selective heating head with a specific pattern.
7. The mass transfer method of micro-leds of claim 6, wherein the selective thermal head is heated by contact heating or non-contact heating.
8. The method according to claim 3, wherein a plurality of thin film transistors are disposed on the target substrate in an array, and the plurality of thin film transistors are disposed under the third adhesive layer.
9. The method as claimed in claim 8, wherein after transferring the attached micro LED chips to the target substrate, the micro LED chips are heated and pressed to electrically connect the micro LED chips with the corresponding TFTs.
10. A display panel, wherein the display panel is a micro light emitting diode display panel, and is formed by the bulk transfer method of the micro light emitting diode according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911250235.5A CN110993749B (en) | 2019-12-09 | 2019-12-09 | Mass transfer method of micro light-emitting diode and display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911250235.5A CN110993749B (en) | 2019-12-09 | 2019-12-09 | Mass transfer method of micro light-emitting diode and display panel |
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| CN110993749A CN110993749A (en) | 2020-04-10 |
| CN110993749B true CN110993749B (en) | 2021-02-23 |
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| CN111477649A (en) * | 2020-04-15 | 2020-07-31 | 深圳市华星光电半导体显示技术有限公司 | Micro-L ED display panel and preparation method and bonding material thereof |
| CN111489991B (en) * | 2020-04-22 | 2023-12-01 | 京东方科技集团股份有限公司 | Display panel and manufacturing method |
| CN112992756A (en) * | 2020-05-28 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Transfer bearing device and transfer method |
| CN113745137B (en) * | 2020-05-30 | 2023-12-19 | 华为机器有限公司 | Transfer method of micro light emitting diode and display panel |
| CN111599912B (en) * | 2020-06-01 | 2020-11-24 | 广东工业大学 | Flexible and stretchable Micro-LED bulk transfer device and method |
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| CN108962789A (en) * | 2018-06-25 | 2018-12-07 | 开发晶照明（厦门）有限公司 | Micro element transfer method and micro element transfer equipment |
| CN108878602B (en) * | 2018-06-29 | 2020-05-19 | 武汉大学 | Manufacturing and transfer printing method for three-primary-color vertical-structure micro LED chip |
| CN109599354A (en) * | 2018-12-07 | 2019-04-09 | 广东工业大学 | A kind of structure and method of the transfer of Micro-LED flood tide |
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