CN111834262A - Microelectronic element transfer apparatus and microelectronic element transfer method - Google Patents
Microelectronic element transfer apparatus and microelectronic element transfer method Download PDFInfo
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- CN111834262A CN111834262A CN202010723391.5A CN202010723391A CN111834262A CN 111834262 A CN111834262 A CN 111834262A CN 202010723391 A CN202010723391 A CN 202010723391A CN 111834262 A CN111834262 A CN 111834262A
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 241
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 238000005096 rolling process Methods 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000012790 adhesive layer Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- -1 polyethylene Polymers 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
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Abstract
The invention provides a microelectronic element transfer device and a microelectronic element transfer method. The first conveying section is provided to output a plurality of microelectronic elements. The second conveying part comprises a first rolling part and a substrate, wherein the substrate is configured on the first rolling part and moves through the rolling of the first rolling part. A plurality of bumps are disposed on the substrate. The light source device is arranged to illuminate the bumps for heating, and the bumps generate phase change. When the microelectronic elements are output from the first conveying part, the connecting force between the microelectronic elements and the first conveying part is smaller than the connecting force between the microelectronic elements and the bumps, and the microelectronic elements are respectively connected with the bumps.
Description
Technical Field
The present invention relates to a component transfer apparatus and a component transfer method, and more particularly, to a microelectronic component transfer apparatus and a microelectronic component transfer method.
Background
In the manufacturing process, it is often necessary to transfer the required micro-devices to the target substrate by the equipment and connect other devices on the substrate. For example, a Micro light emitting diode (Micro LED) is disposed on a substrate in a mass transfer manner and electrically connected to a bump (bump) disposed on the substrate in advance. At present, the micro light emitting diodes on the carrier can be transferred to the substrate by an over-distance force such as electrostatic force or magnetic force. However, the number of micro leds transmitted by the above method is limited by the size of the electrostatic head or the magnetic head, so that the transmission efficiency cannot be effectively improved, and the requirement for mass transfer cannot be met. Moreover, since electronic devices are scaled down to the micron level, and there is a transferring error (an error in the positioning position of the transferred microelectronic device) of the microelectronic device, which is more likely to be caused by the moving error of the device itself, between the transferring processes of different times, there is a need for a transferring device and method with high efficiency and accuracy.
Disclosure of Invention
The invention aims at a micro electronic element transfer device and a micro electronic element transfer method, which have high transfer efficiency and good transfer accuracy.
According to an embodiment of the present invention, a microelectronic element transfer apparatus is provided, which includes a first conveying portion, a second conveying portion, and a light source device. The first conveying section is provided to output a plurality of microelectronic elements. The second conveying part comprises a first rolling part and a substrate, wherein the substrate is configured on the first rolling part and moves through the rolling of the first rolling part. A plurality of bumps are disposed on the substrate. The light source device is arranged to illuminate the bumps for heating, and the bumps generate phase change. When the microelectronic elements are output from the first conveying part, the connecting force between the microelectronic elements and the first conveying part is smaller than the connecting force between the microelectronic elements and the bumps, and the microelectronic elements are respectively connected with the bumps.
According to an embodiment of the present invention, there is provided a microelectronic element transfer method, including: arranging a first conveying part to output a plurality of micro electronic elements; arranging a substrate on a first rolling member, and moving the substrate through rolling of the first rolling member, wherein a plurality of bumps are arranged on the substrate; illuminating the bumps by a light source device to heat the bumps so as to generate phase change on the bumps; and when the microelectronic elements are output from the first conveying part, the connection force between the microelectronic elements and the first conveying part is smaller than the connection force between the microelectronic elements and the bumps, and the microelectronic elements are respectively jointed with the bumps so as to be arranged on the substrate.
Based on the above, the microelectronic element transfer apparatus and the microelectronic element transfer method provided in the embodiments of the invention output a plurality of microelectronic elements through the first conveying portion, convey a plurality of bumps through the substrate, and heat the bumps by the light source to generate a phase change in the bumps, so that the microelectronic elements are respectively disposed on the substrate through the bumps.
Drawings
Fig. 1A is a schematic view of a microelectronic element transfer apparatus according to a first embodiment of the present invention;
fig. 1B is a schematic diagram of a microelectronic device and a conductive pad according to an embodiment of the invention;
fig. 1C is a schematic view of a microelectronic device and a conductive pad according to an embodiment of the invention;
fig. 2 is a schematic view of a microelectronic element transfer apparatus according to a second embodiment of the present invention;
fig. 3A to 3D are schematic views of a microelectronic element transfer apparatus according to a third embodiment of the present invention;
fig. 4 is a schematic view of a microelectronic element transfer apparatus according to a fourth embodiment of the present invention;
fig. 5 is a schematic view of a microelectronic element transfer apparatus according to a fifth embodiment of the present invention;
fig. 6 is a schematic view of a microelectronic element transfer apparatus according to a sixth embodiment of the present invention;
fig. 7 is a schematic view of a microelectronic element transfer apparatus according to a seventh embodiment of the present invention;
fig. 8 is a schematic view of a microelectronic element transfer apparatus according to an eighth embodiment of the present invention;
fig. 9 is a flowchart of a microelectronic element transfer method according to a ninth embodiment of the invention.
Description of the reference numerals
100. 200, 300, 400, 500, 600, 700, 800 microelectronic element transfer apparatus
110. 210, 310, 410, 510, 610, 710, 810, a first conveying section
120. 320, 420, 520, 620, 720, 820 second conveying part
121. 211, 311, 321, 411, 421, 521, 611, 621, 711, 721, 811, 821 rolling elements
121A, 211A rolling member axis
122. 322, 422, 522, 622, 722, 822 substrate
130. 330, 430, 613, 730, 830 light source device
140. 340 microelectronic component
142 semiconductor layer
150. 350, 350A, 350B, 350C, 450, 550, 650, 750, 850: bump
160. 162, 164 conductive pads
212. 312, 412, 612, 712, 812 a carrier plate
331. 332, 431, 432, 731, 732, 831, 832 light source
340F connecting surface
370. 370A, 370B, 370C, 470, 770, 870 connecting pad
370F first side
370T second side
723 conveying belt
790 pressing parts
823 adhesive layer
823H through hole
900 micro-electronic component transfer method
S901, S902, S903, S904
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Referring to fig. 1A, there is shown a schematic view of a microelectronic element transfer apparatus according to a first embodiment of the present invention. The microelectronic element transfer apparatus 100 includes a first conveying section 110, a second conveying section 120, and a light source device 130. The first conveying part 110 is provided to output a plurality of microelectronic elements 140. According to an embodiment of the present invention, the microelectronic element 140 may be an optoelectronic element, such as a micro light emitting diode or other micro light emitting element. In the present embodiment, only a single microelectronic element 140 is shown as a representative output from the first transport section 110. According to an embodiment of the present invention, the first conveying unit 110 may have a plurality of output holes to simultaneously output a plurality of microelectronic elements 140. According to another embodiment of the present invention, the first conveying part 110 may include a conveyor belt, on which a plurality of microelectronic elements 140 are disposed, and the microelectronic elements 140 may be separated from the conveyor belt in batches and output from the first conveying part 110.
The second conveying unit 120 includes a roller 121 and a substrate 122, and the substrate 122 is disposed on the roller 121 and moved rightward by the roller 121. Specifically, the roller 121 has a roller axis 121A, the roller axis 121A does not move, and the roller 121 rolls (or rotates) with respect to the roller axis 121A.
The substrate 122 is provided with a plurality of bumps 150, and when the substrate 122 is viewed from the top, the plurality of bumps 150 provided thereon may be arranged in a linear form or in a matrix form. According to an embodiment of the present invention, the first conveying unit 110 may have a plurality of output holes, the plurality of bumps 150 on the substrate 122 are arranged in a matrix, and the plurality of output holes of the first conveying unit 110 correspond to the matrix.
The light source device 130 is configured to illuminate the bump 150 on the substrate 122 to heat and cause the bump 150 to change phase, such as softening the bump 150 for subsequent bonding. In the present embodiment, the light source device 130 is, for example, a laser device, and utilizes the characteristic that the light source device 130 emits light precisely in space to precisely align the bumps 150 to be heated and softened. In addition, the light source device 130 may use an optical element such as a beam splitter to split the generated light beam to generate a plurality of light beams simultaneously, and heat the plurality of bumps 150 simultaneously. According to an embodiment of the present invention, the light source device 130 heats the bump 150 to a temperature range that is greater than a glass transition temperature (Tg) of the bump 150 and less than a melting point (Tm) of the bump 150 to soften the bump 150 so that a phase change of the bump 150 ranges from a glassy state to a molten liquid state, and enters a plastic state, a high-viscosity state or a rubber state, but is not heated to a temperature greater than the melting point of the bump 150 to prevent the bump 150 from overflowing to other bumps, but the present invention is not limited thereto.
When the microelectronic elements 140 are output from the first conveying unit 110, one or more bumps 150 on the substrate 122 are heated by the light source device 130 to be softened, and the connecting force between the microelectronic elements 140 and the first conveying unit 110 is smaller than the connecting force between the microelectronic elements 140 and the bumps 150, so that the microelectronic elements 140 output from the first conveying unit 110 can be respectively bonded with the softened bumps 150 and stably transferred and disposed on the substrate 122. In addition, the substrate 122 moves to the right along with the rolling of the rolling member 121, so that the light source device 130 can heat different bumps 150, and the heated bumps 150 are further connected with the microelectronic elements 140 continuously output from the first conveying portion 110.
According to the present embodiment, the microelectronic device transferring apparatus 100 outputs a plurality of microelectronic devices 140 through the first conveying portion 110, conveys a plurality of bumps 150 through the substrate 122, and bonds the microelectronic devices 140 to the bumps 150, so as to transfer the microelectronic devices 140 from the first conveying portion 110 to the substrate 122, thereby achieving an efficient mass transfer. In addition, the microelectronic device transfer apparatus 100 further precisely heats and softens the bumps 150 by utilizing the property of the light source device 130 emitting light precisely in space, so that the microelectronic device 140 is stably disposed on the substrate 122, thereby improving the accuracy of mass transfer. Here, the substrate 122 is embodied as a Thin Film Transistor (TFT) substrate. In other embodiments, the receiving substrate 122 may be a glass substrate, a ceramic substrate, a Semiconductor (Semiconductor) substrate, a Submount (Submount), a complementary metal-Oxide-Semiconductor (CMOS) circuit substrate, a Liquid Crystal On Silicon (LCOS) substrate, or other substrate with a driving unit. The bump 150 may be made of a metal or an alloy having a melting point lower than 200 degrees celsius, such as indium, indium-bismuth alloy, tin-bismuth alloy, lead-tin alloy, zinc-tin alloy, etc., but not limited thereto, and the microelectronic device 140 is electrically connected to the substrate 122 by the microelectronic device transfer apparatus 100 to complete a micro light emitting device display device (not shown). In other embodiments, substrate 122 is embodied as a wireless carrier during bulk transfer, such as a sapphire substrate or a glass substrate. The bump 150 is made of an organic material, such as a polymer with adhesive properties, for example, epoxy, polyimide, polyester, polyurethane, benzocyclobutene, polyethylene, polypropylene, polyacrylate, and combinations thereof. The microelectronic device 140 is temporarily placed on the substrate 122 by the microelectronic device transfer apparatus 100 in preparation for subsequent bulk transfers.
In this embodiment, each of the microelectronic elements 140 may further have a conductive pad 160 disposed thereon, according to an embodiment of the present invention, the light source device 130 may illuminate the conductive pad 160 to heat and soften the conductive pad 160 when the microelectronic element 140 is not output from the first conveying portion 110, and when the microelectronic element 140 is output from the first conveying portion 110, the microelectronic element 140 may be bonded to the bump 150 through the conductive pad 160. It should be noted that the above-mentioned process of heating and softening the conductive pads 160 by the light source device 130 may be performed on a plurality of conductive pads 160 at the same time, or only one conductive pad 160 is heated and softened at a time, and specific embodiments refer to the second embodiment to be described below. According to an embodiment of the invention, the light source device 130 heats the conductive pad 160 to a temperature range that is greater than the glass transition temperature (Tg) of the conductive pad 160 and less than the melting point (Tm) of the conductive pad 160 to soften the conductive pad 160, so that the phase change of the conductive pad 160 ranges from a glassy state to a molten liquid state, and enters a plastic state, a high adhesion state or a rubber state, but is not heated to a temperature greater than the melting point of the conductive pad 160 to avoid overflow thereof, but the invention is not limited thereto. Specifically, the conductive pad 160 can be used as an electrode 160 of the microelectronic device 140, and the conductive pad 160 shown in fig. 1B is disposed on the semiconductor layer 142 of the microelectronic device 140, where the microelectronic device 140 is, for example, a vertical microelectronic device 140. However, as shown in fig. 1C, the microelectronic device 140 may be a horizontal or flip-chip microelectronic device 140, and at least two conductive pads, including a first conductive pad 162 and a second conductive pad 164, are electrically connected to the first type semiconductor layer (not shown) and the second type semiconductor layer (not shown) of the flip-chip microelectronic device 140, respectively.
Various embodiments of the first conveying part 110 will be presented in the following examples. It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Referring to fig. 2, there is shown a schematic view of a microelectronic element transfer apparatus according to a second embodiment of the present invention. The microelectronic element transfer apparatus 200 includes a first conveyance section 210, a second conveyance section 120, and a light source device 130. The second embodiment is different from the first embodiment in that the first conveying part 210 includes a roller 211 and a carrier plate 212. The carrier 212 is disposed on the rolling element 211, and the microelectronic elements 140 are disposed on the carrier 212. The roller 211 has a roller axial center 211A and the roller 211 rolls (or rotates) with respect to the roller axial center 211A. The light source device 130 illuminates the conductive pads 160 on the microelectronic elements 140 to heat and soften the conductive pads 160, and when the microelectronic elements 140 are detached from the carrier 212, the microelectronic elements 140 are bonded to the bumps 150 on the substrate 122 through the conductive pads 160, so that the microelectronic elements 140 are stably disposed on the substrate 122 and connected to the bumps 150. According to an embodiment of the invention, the carrier 212 may include a photo-dissociation material (not shown) disposed between the carrier 212 and the microelectronic device 140, and the adhesion between the portion of the carrier 212 and the microelectronic device 140 may be reduced by irradiating ultraviolet light or laser to a portion of the carrier 212, so that the microelectronic device 140 thereon is separated from the carrier 212. When using photo-dissociation materials, it is preferable to use ultraviolet light to avoid overheating during the illumination process from affecting the microelectronic device 140.
Referring to fig. 3A to 3D, there are shown schematic views of a microelectronic element transfer apparatus according to a third embodiment of the present invention. The microelectronic element transfer apparatus 300 includes a first conveying part 310, a second conveying part 320, and a light source device 330. The first conveying part 310 includes a rolling element 311 and a carrier 312, wherein the carrier 312 is flexible, and the carrier 312 conveys the microelectronic elements 340 along with the rolling element 311. According to an embodiment of the present invention, the carrier plate 312 may be implemented by a conveyor belt. In the present embodiment, each of the microelectronic elements 340 is further disposed with a connection pad 370, and the microelectronic elements 340 are disposed on the carrier 312 through the connection pads 370 thereon. According to an embodiment of the present invention, the connection pad 370 may include an organic material, such as epoxy, polyimide, polyester, polyurethane, benzocyclobutene, polyethylene, polypropylene, polyacrylate, and combinations thereof, but the present invention is not limited thereto.
The second conveying portion 320 includes a roller 321 and a substrate 322, wherein the substrate 322 is a flexible substrate, and the substrate 322 conveys the bumps 350 along with the roller 321. The light source device 330 includes a first light source 331 and a second light source 332, wherein the first light source 331 is disposed to heat and soften the bumps 350 on the substrate 322, and the second light source 332 is disposed in the first transporting portion 310 to heat and make the connecting pads 370 on the microelectronic elements 340 change phase.
As shown in fig. 3A, the second light source 332 heats and softens the connection pad 370, and at the same time, the first light source 331 heats and softens the corresponding bump 350 on the substrate 322, when the microelectronic device 340 and the bump 350 contact each other due to the rolling of the rolling element 311 and the rolling element 321, the connection force between the microelectronic device 340 and the connection pad 370 and the bump 350 is greater than the connection force between the microelectronic device 340 and the connection pad 370 and the carrier 312, so that the microelectronic device 340 is firmly disposed on the substrate 322 by bonding the bump 350 to the connection pad 370. The bonding pads 370 may be partially left on the carrier 312 and not on the microelectronic device 340 during the phase change process, or may be removed during the subsequent phase change process when the microelectronic device 340 is bonded to the bumps 350, which is not limited herein. According to an embodiment of the invention, the second light source 332 heats the bonding pad 370 to a temperature greater than the melting point of the bonding pad 370, so that the bonding pad 370 becomes soft and in a molten liquid state, and is easily detached from the carrier 312, but the invention is not limited thereto. According to an embodiment of the invention, each of the microelectronic devices 340 may be provided with a conductive pad on an opposite side of the microelectronic device 340 with respect to the side provided with the connection pad 370, and the microelectronic device 340 may be bonded to the bump 350 through the conductive pad.
In the embodiment, each connection pad 370 may include a first surface 370F for connecting the microelectronic device 340 and a second surface 370T for connecting the carrier 312, and the area of the first surface 370F is larger than that of the second surface 370T, so that the connection pad 370 can be easily separated from the carrier 312 and the microelectronic device 340 during bonding. In an embodiment, the area ratio of the second face 370T and the first face 370F is less than 0.9, but the present invention is not limited thereto, and the areas of the first face 370F and the second face 370T may be equally large. Specifically, the first surface 370F may be smaller than the area of the surface 340F connected to the microelectronic element 340, and in one embodiment, the ratio of the areas of the second surface 370T and the first surface 370F is smaller than 0.9, so that the connection pad 370 may be easily detached from the microelectronic element 340.
Referring next to fig. 3B, a top view of the arrangement of the plurality of bumps 350 on the substrate 322 is shown. As shown in fig. 3B, the bumps 350 are arranged in a matrix. According to an embodiment of the present invention, the microelectronic devices 340 on the carrier 312 of the microelectronic device transfer apparatus 300 can also be arranged in a matrix form, so that the microelectronic devices 340 and the bumps 350 can be correspondingly bonded.
Referring to fig. 3C, in the present embodiment, the bump 350 may include a bump 350A, a bump 350B, and a bump 350C having a plurality of different heights. Specifically, in one embodiment, the microelectronic elements 340 may be respectively bonded to the lowest bumps 350C on the substrate 322. Then, the next lower bump 350B is disposed on the substrate 322, and the microelectronic devices 340 of the other color are respectively bonded to the second lower bump 350B on the substrate 322, and finally, the bump 350A is disposed on the substrate 322, and the microelectronic devices 340 of the other color are respectively bonded to the highest bump 350A on the substrate 322, thereby avoiding mutual influence when bonding the microelectronic devices 340 of the colors. The microelectronic devices 340 are respectively output to the bumps 350A, 350B and 350C on the bonding substrate 322 through the first conveying portion 310, and the microelectronic devices 340 may include blue micro leds, green micro leds, red micro leds and combinations thereof, but the invention is not limited thereto.
Referring to FIG. 3D, the connection pads 370 may also include connection pads 370A, 370B, and 370C having a variety of different heights. Specifically, in one embodiment, the microelectronic elements 340 may be disposed on the first surfaces of the connection pads 370A and respectively bonded to the bumps on the substrate 322. Then, a plurality of microelectronic devices 340 of another color are disposed on the first surfaces of the second highest connection pads 370B to be respectively bonded to the bumps on the substrate 322. Finally, the microelectronic elements 340 with another color are disposed on the first surfaces of the connection pads 370C with the highest colors and respectively bonded to the bumps on the substrate 322, so as to avoid mutual influence when the microelectronic elements 340 with the different colors are bonded. The connecting pads 370C and the microelectronic devices 340 are respectively output to the bumps 350 on the bonding substrate 322 through the first conveying portion 310, and the microelectronic devices 340 may include blue micro leds, green micro leds, red micro leds and combinations thereof, but the invention is not limited thereto.
Referring to fig. 4, there is shown a schematic view of a microelectronic element transfer apparatus according to a fourth embodiment of the present invention. The microelectronic element transfer apparatus 400 includes a first conveyance section 410, a second conveyance section 420, and a light source device 430. The first conveying part 410 includes a roller 411 and a carrier 412, wherein the carrier 412 is flexible, and the carrier 412 conveys the microelectronic elements 340 along with the rolling of the roller 411. A connecting pad 470 is disposed on each of the microelectronic devices 340, and the microelectronic devices 340 are disposed on the carrier 412 through the connecting pads 470 thereon.
The second conveying part 420 includes a roller 421 and a flexible substrate 422, and the substrate 422 conveys the bumps 450 along with the rolling of the roller 421. The light source device 430 includes a first light source 431 and a second light source 432, wherein the first light source 431 is disposed to heat and soften the bumps 450 on the substrate 422, and the second light source 432 is disposed in the first transporting portion 410 to heat and soften the connecting pads 470 on the microelectronic elements 340.
The second light source 432 heats and softens the connection pads 470, so that the corresponding microelectronic devices 340 are separated from the carrier 412, and the microelectronic devices 340 separated from the carrier 412 fall toward the flexible substrate 422 by gravity and are correspondingly bonded to the bumps 450 on the substrate 422, so that the microelectronic devices 340 are stably disposed on the substrate 422. The engagement by gravity avoids excessive pressure on contact to damage the microelectronic element 340.
Referring to fig. 5, there is shown a schematic view of a microelectronic element transfer apparatus according to a fifth embodiment of the present invention. The microelectronic element transfer apparatus 500 includes a first conveying part 510, a second conveying part 520, and a light source device 130. The first transfer unit 510 has a chamber 511 and at least one outlet 512, wherein the chamber 511 is filled with a fluid, and the plurality of microelectronic elements 340 are loaded in the chamber 511 and sequentially flow out from the outlet 512 through the fluid.
The second conveying unit 520 includes a roller 521 and a flexible substrate 522, and the substrate 522 conveys the bumps 550 along with the rolling of the roller 521. The light source device 130 is configured to heat and soften the bumps 550 on the substrate 522. According to an embodiment of the present invention, the microelectronic element transfer device 500 may further include an additional light source device (not shown) configured to heat the microelectronic element 340 flowing from the outlet 512 to accelerate evaporation of the fluid remaining on the microelectronic element 340.
After flowing out of the outlet 512, the microelectronic device 340 falls down by gravity and engages the bump 550 on the substrate 522, so as to be firmly disposed on the substrate 522. According to an embodiment of the present invention, the bumps 550 may be disposed on the substrate 522 in a matrix form, the first conveying portion 510 has a plurality of outlets 512, and the outlets 512 are disposed in the same matrix form, and the microelectronic elements 340 are output from the outlets 512 and firmly disposed on the substrate 522 in combination with the bumps 550.
Referring to fig. 6, there is shown a schematic view of a microelectronic element transfer apparatus according to a sixth embodiment of the present invention. The microelectronic element transfer apparatus 600 includes a first conveying part 610, a second conveying part 620, and a light source device 130. The first conveying portion 610 includes a rolling element 611, a carrier 612 and an ultraviolet light device 613, wherein the carrier 612 is flexible and includes a light dissociation material, and the light device 613 is configured to irradiate a local area of the carrier 612, such as ultraviolet light or laser light, so as to cause a dissociation reaction in the local area of the carrier 612, thereby generating a change in material characteristics, such that the adhesion between the local area and the microelectronic device 340 thereon is reduced. Preferably, ultraviolet light is used to avoid overheating during the illumination process from affecting the microelectronic device 340.
The second conveying portion 620 includes a roller 621 and a substrate 622, wherein the substrate 622 is a flexible substrate, and the substrate 622 conveys the bumps 650 along with the rolling of the roller 621. The light source device 130 is configured to heat and soften the bumps 650 on the substrate 622.
As shown in fig. 6, when the ultraviolet light device 613 irradiates ultraviolet light on a local area of the carrier 612, the adhesion between the microelectronic device 340 and the carrier 612 in the local area is reduced. Meanwhile, the light source device 130 heats and softens the corresponding bump 650 on the substrate 622, and when the microelectronic element 340 and the bump 650 contact each other due to the rolling of the rolling member 611 and the rolling member 621, the adhesion force between the microelectronic element 340 and the bump 650 is greater than the adhesion force between the microelectronic element 340 and the carrier 612, so that the microelectronic element 340 is firmly disposed on the substrate 622 by bonding the bump 650.
Referring to fig. 7, there is shown a schematic view of a microelectronic element transfer apparatus according to a seventh embodiment of the present invention. The microelectronic element transfer apparatus 700 includes a first conveyance part 710, a second conveyance part 720, and a light source device 730. The first conveying unit 710 includes a roller 711 and a carrier plate 712, and the carrier plate 712 conveys the microelectronic elements 340 along with the rolling of the roller 711. In the present embodiment, each of the microelectronic elements 340 is further disposed with a connection pad 770, and the microelectronic elements 340 are disposed on the carrier 712 through the connection pads 770 thereon.
The second conveying portion 720 includes a roller 721, a substrate 722, a conveyer 723 and a pressing member 790, wherein the substrate 722 is a flexible substrate, the conveyer 723 conveys a plurality of bumps 750 onto the substrate 722, and the substrate 722 conveys the bumps 750 along with the rolling of the roller 721. The light source device 730 includes a first light source 731 and a second light source 732, wherein the first light source 731 is disposed to heat and soften the bumps 750 on the substrate 722, and the second light source 732 is disposed in the first transporting portion 710 to heat and soften the connecting pads 770 on the microelectronic elements 340. According to an embodiment of the invention, the bump 750 may be generated by a three-dimensional (3D) printer and disposed on the substrate 722, but the invention is not limited thereto.
As shown in fig. 7, the second light source 732 heats and softens the connection pad 770, and the first light source 731 heats and softens the corresponding bump 750 on the substrate 722, when the microelectronic device 340 and the bump 750 contact each other due to the rolling of the rolling element 711 and the rolling element 721, the adhesion force between the microelectronic device 340 and the connection pad 770 and the bump 750 is greater than the adhesion force between the microelectronic device 340 and the connection pad 770 and the carrier 712, so that the microelectronic device 340 and the connection pad 770 are bonded to the bump 750, and then the bonding element 790 presses the connection pad 770, the microelectronic device 340 and the bump 750 together to firmly fix the microelectronic device on the substrate 722. According to an embodiment of the present invention, the pressing member 790 may be a roller (roller), but the present invention is not limited thereto.
Referring to fig. 8, there is shown a schematic view of a microelectronic element transfer apparatus according to a third embodiment of the present invention. The microelectronic element transfer apparatus 800 includes a first conveyance section 810, a second conveyance section 820, and a light source device 830. The first conveying unit 810 includes a roller 811 and a carrier 812, wherein the carrier 812 is flexible, and the carrier 812 conveys the microelectronic elements 340 along with the rolling of the roller 811. A connecting pad 870 is further disposed on each of the microelectronic devices 340, and the microelectronic devices 340 are disposed on the carrier 812 through the connecting pads 870 thereon.
The second conveying part 820 includes a roller 821 and a substrate 822, wherein the substrate 822 is a flexible substrate, and the substrate 822 conveys the bumps 850 along with the rolling of the roller 821.
It should be noted that an adhesive 823 is disposed on the substrate 822, and the adhesive 823 covers the bumps 850. The light source device 830 includes a first light source 831 and a second light source 832, wherein the first light source 831 is configured to fuse a portion of the adhesive layer 823 corresponding to the bumps 850 to fuse a plurality of through holes 823H, such that each of the bumps 850 is exposed from the through holes 823H, and further heat and soften the exposed bumps 850. The second light source 832 may be disposed in the first conveying portion 810 to heat and soften the connecting pads 870 on the microelectronic devices 340.
As shown in fig. 8, the second light source 832 heats and softens the connection pad 870, and at the same time, the first light source 831 melts and melts a part of the adhesive layer 823 to generate a through hole 823H, and exposes the bump 850 from the through hole 823H, and further heats and softens the exposed bump 850. When the microelectronic element 340 and the bump 850 contact each other due to the rolling of the rolling element 811 and the rolling element 821, the adhesion between the microelectronic element 340 and the connecting pad 870 and the bump 850 is greater than the adhesion between the microelectronic element 340 and the connecting pad 870 and the carrier 812, so that the microelectronic element 340 and the connecting pad 870 are bonded to the bump 850 and are stably disposed on the substrate 322, wherein the width of the through hole 823H is slightly greater than the width of the corresponding microelectronic element 340. In addition, since the first light source 831 melts only a portion of the adhesive layer 823 corresponding to the bump 850, the rest of the adhesive layer 823 is not melted, and the bonding pad 870, the microelectronic device 340, and the bump 850 after bonding are supported by the rest of the adhesive layer 823 without being tilted, so as to be more stably disposed on the substrate 822.
Referring to fig. 9, there is shown a flow chart of a microelectronic element transfer method according to a ninth embodiment of the present invention. The microelectronic element transfer method 900 of the ninth embodiment is applicable to the microelectronic element transfer apparatus of any of the above embodiments. The following microelectronic component transfer method 900 will be described with reference to the microelectronic component transfer apparatus 100 of fig. 1A as an example.
Microelectronic component transfer method 900 includes: setting a first conveying section 110 to output a plurality of microelectronic elements 140 (step S901); disposing the substrate 122 on the first roller 121, and moving the substrate 122 by the rolling of the first roller 121, wherein the substrate 122 is disposed with a plurality of bumps 150 (step S902); illuminating the bumps 150 by the light source device 130 to heat and soften the bumps 150 (step S903); and when the microelectronic elements 140 are output from the first conveying portion 110, the microelectronic elements 140 are respectively bonded to the bumps 150, so as to dispose the microelectronic elements 140 on the substrate 122 (step S904). The detailed steps of the microelectronic element transferring method 900 may refer to the description details of the microelectronic element transferring apparatus of the above embodiments, and will not be repeated here.
In summary, the microelectronic device transferring apparatus and the microelectronic device transferring method provided by the embodiments of the invention output a plurality of microelectronic devices through the first conveying portion, convey a plurality of bumps through the substrate, and heat and soften the bumps through the light source, so that the microelectronic devices are respectively disposed on the substrate through the bumps.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (18)
1. A microelectronic component transfer apparatus, comprising:
a first conveying section configured to output a plurality of microelectronic elements;
a second conveying section including:
a first rolling member; and
a base plate disposed on the first rolling member and moving by rolling of the first rolling member, the base plate having a plurality of bumps; and
a light source device configured to illuminate the plurality of bumps for heating, the plurality of bumps generating a phase change;
when the microelectronic elements are output from the first conveying part, the connecting force of the microelectronic elements and the first conveying part is smaller than the connecting force of the microelectronic elements and the bumps, and the microelectronic elements are respectively jointed with the bumps.
2. The microelectronic device transfer apparatus according to claim 1, wherein each of the microelectronic devices is provided with a conductive pad, the light source device illuminates the conductive pads to heat and soften the conductive pads, and the microelectronic devices are respectively bonded to the bumps through the conductive pads when the microelectronic devices are outputted from the first conveying portion.
3. The microelectronic element transfer apparatus according to claim 1, wherein the first conveying portion further comprises a second roller and a carrier plate, the plurality of microelectronic elements are disposed on the carrier plate, the carrier plate is disposed on the second roller, and the plurality of microelectronic elements are conveyed by the rolling of the second roller.
4. The microelectronic element transfer apparatus according to claim 3, wherein the microelectronic elements are disposed on the carrier through a plurality of connection pads, and the light source device illuminates the connection pads to heat the connection pads, so that the connection pads generate a phase change, and the microelectronic elements are outputted from the first conveying portion.
5. The microelectronic component transfer apparatus according to claim 4, wherein each of the connection pads comprises a first side connected to a corresponding one of the microelectronic components and a second side connected to the carrier plate, the first side having an area larger than the second side.
6. The microelectronic component transfer apparatus according to claim 3, wherein the carrier further comprises a light dissociation material, and the light source device illuminates the carrier to separate the microelectronic components from the carrier and output the microelectronic components from the first conveying portion.
7. The microelectronic device transfer apparatus according to claim 1, wherein the substrate further comprises an adhesive layer disposed on the substrate and the bumps, and the light source device illuminates the adhesive layer to fuse the through holes corresponding to the bumps on the adhesive layer.
8. The microelectronic component transfer device of claim 1, wherein the plurality of bumps have a plurality of heights.
9. The microelectronic device transfer apparatus according to claim 1, wherein the bumps have a phase change between a glassy state and a molten liquid state.
10. The microelectronic device transfer apparatus according to claim 2, wherein the phase change of the conductive pads is between a glassy state and a molten state.
11. A microelectronic component transfer method, comprising:
arranging a first conveying part to output a plurality of micro electronic elements;
arranging a substrate on a first rolling member, and moving the substrate through rolling of the first rolling member, wherein a plurality of bumps are arranged on the substrate;
illuminating the bumps by a light source device to heat the bumps so as to enable the bumps to generate phase change; and
when the microelectronic elements are output from the first conveying part, the microelectronic elements are respectively jointed with the bumps, and the connecting force of the microelectronic elements and the first conveying part is smaller than that of the microelectronic elements and the bumps, so that the microelectronic elements are arranged on the substrate.
12. The microelectronic element transfer method according to claim 11, further comprising:
providing a conductive pad on each of the plurality of microelectronic elements;
illuminating the conductive pads by the light source device to heat the conductive pads so as to enable the conductive pads to generate phase change; and
when the microelectronic elements are output from the first conveying part, the conductive pads are respectively jointed between the microelectronic elements and the bumps.
13. The microelectronic element transfer method according to claim 11, further comprising:
arranging a second rolling piece and a carrier plate, wherein the plurality of microelectronic elements are arranged on the carrier plate; and
and arranging the carrier plate on the second rolling member, and conveying the plurality of microelectronic elements by rolling the second rolling member.
14. The microelectronic element transfer method according to claim 13, further comprising:
arranging a connecting pad on each of the plurality of microelectronic elements, wherein the plurality of microelectronic elements are arranged on the carrier plate through the plurality of connecting pads respectively; and
the light source device illuminates the connecting pads to heat the connecting pads, so that the connecting pads generate phase change, and the microelectronic elements are output from the first conveying part.
15. The microelectronic element transfer method according to claim 13, further comprising:
arranging the carrier plate to comprise a light dissociation material; and
the carrier plate is illuminated by the light source device, so that the plurality of microelectronic elements are separated from the carrier plate and output from the first conveying part.
16. The microelectronic element transfer method according to claim 11, further comprising:
arranging an adhesive layer on the substrate and the plurality of bumps; and
and illuminating the adhesion layer by the light source device so as to melt the through holes corresponding to the bumps on the adhesion layer.
17. The microelectronic element transfer method according to claim 11, further comprising:
heating the plurality of bumps with the light source device to a temperature greater than a glass transition temperature of the plurality of bumps and less than a melting point temperature of the plurality of bumps.
18. The microelectronic element transfer method according to claim 12, further comprising:
and heating the conductive pads to a temperature higher than the glass transition temperature of the conductive pads and lower than the melting point temperature of the conductive pads by using the light source device.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771986B (en) * | 2021-04-16 | 2022-07-21 | 友達光電股份有限公司 | A method of manufacturing an electronic device |
| WO2022247228A1 (en) * | 2021-05-28 | 2022-12-01 | 重庆翰博显示科技研发中心有限公司 | Microelectronic assembly discharge, transfer, and positioning apparatus and operating method therefor |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09330951A (en) * | 1996-06-13 | 1997-12-22 | Matsushita Electric Ind Co Ltd | Method for joining electronic component |
| JP2002314052A (en) * | 2001-04-11 | 2002-10-25 | Sony Corp | Element transfer method, element arraying method using the same, and manufacturing method of image display device |
| KR20090131870A (en) * | 2008-06-19 | 2009-12-30 | 주식회사 두오텍 | An application device and an application method using milti-rail |
| US20100075459A1 (en) * | 2008-09-24 | 2010-03-25 | Kerr Roger S | Thermal barrier layer for integrated circuit manufacture |
| US20130112223A1 (en) * | 2011-11-04 | 2013-05-09 | Tokyo Electron Limited | Substrate treatment system, substrate transfer method, and a non-transitory computer storage medium |
| US20130342305A1 (en) * | 2012-06-25 | 2013-12-26 | Jui-Chih Yen | Structure of positioning cover of miniature fuse device |
| WO2017008253A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| CN107293625A (en) * | 2017-06-19 | 2017-10-24 | 南京大学 | AlGaN hetero-junctions nano column array luminescent devices and preparation method thereof |
| KR101800367B1 (en) * | 2016-08-24 | 2017-11-28 | 한국기계연구원 | Method of transferring a micro-device and Micro-device substrate manufactured by the same |
| US20180047601A1 (en) * | 2016-08-10 | 2018-02-15 | Boe Technology Group Co., Ltd. | Transfer device and transfer method |
| CN107768487A (en) * | 2016-08-18 | 2018-03-06 | 新世纪光电股份有限公司 | The method of flood tide transferred-electron device |
| CN108231651A (en) * | 2017-12-26 | 2018-06-29 | 厦门市三安光电科技有限公司 | Microcomponent transfer device and transfer method |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
| WO2018152866A1 (en) * | 2017-02-21 | 2018-08-30 | 深圳市华星光电技术有限公司 | Transfer printing device for micro light emitting diodes |
| CN110707119A (en) * | 2019-06-21 | 2020-01-17 | 錼创显示科技股份有限公司 | Semiconductor material substrate, micro light-emitting diode panel and manufacturing method thereof |
| CN111276505A (en) * | 2018-12-05 | 2020-06-12 | 英属开曼群岛商錼创科技股份有限公司 | Micro light-emitting diode display device and manufacturing method thereof |
-
2020
- 2020-07-24 CN CN202010723391.5A patent/CN111834262B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09330951A (en) * | 1996-06-13 | 1997-12-22 | Matsushita Electric Ind Co Ltd | Method for joining electronic component |
| JP2002314052A (en) * | 2001-04-11 | 2002-10-25 | Sony Corp | Element transfer method, element arraying method using the same, and manufacturing method of image display device |
| KR20090131870A (en) * | 2008-06-19 | 2009-12-30 | 주식회사 두오텍 | An application device and an application method using milti-rail |
| US20100075459A1 (en) * | 2008-09-24 | 2010-03-25 | Kerr Roger S | Thermal barrier layer for integrated circuit manufacture |
| US20130112223A1 (en) * | 2011-11-04 | 2013-05-09 | Tokyo Electron Limited | Substrate treatment system, substrate transfer method, and a non-transitory computer storage medium |
| US20130342305A1 (en) * | 2012-06-25 | 2013-12-26 | Jui-Chih Yen | Structure of positioning cover of miniature fuse device |
| WO2017008253A1 (en) * | 2015-07-14 | 2017-01-19 | Goertek. Inc | Transferring method, manufacturing method, device and electronic apparatus of micro-led |
| US20180047601A1 (en) * | 2016-08-10 | 2018-02-15 | Boe Technology Group Co., Ltd. | Transfer device and transfer method |
| CN107768487A (en) * | 2016-08-18 | 2018-03-06 | 新世纪光电股份有限公司 | The method of flood tide transferred-electron device |
| KR101800367B1 (en) * | 2016-08-24 | 2017-11-28 | 한국기계연구원 | Method of transferring a micro-device and Micro-device substrate manufactured by the same |
| CN109716505A (en) * | 2016-08-24 | 2019-05-03 | 财团法人波动能量极限制御研究团 | The method for transferring micro element and the micro element substrate as made by this method |
| WO2018152866A1 (en) * | 2017-02-21 | 2018-08-30 | 深圳市华星光电技术有限公司 | Transfer printing device for micro light emitting diodes |
| US20180342485A1 (en) * | 2017-02-21 | 2018-11-29 | Shenzhen China Star Optoelectronics Technology Co. , Ltd. | Micro light emitting diode transfer-printing devices |
| CN107293625A (en) * | 2017-06-19 | 2017-10-24 | 南京大学 | AlGaN hetero-junctions nano column array luminescent devices and preparation method thereof |
| CN108231651A (en) * | 2017-12-26 | 2018-06-29 | 厦门市三安光电科技有限公司 | Microcomponent transfer device and transfer method |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
| CN111276505A (en) * | 2018-12-05 | 2020-06-12 | 英属开曼群岛商錼创科技股份有限公司 | Micro light-emitting diode display device and manufacturing method thereof |
| CN110707119A (en) * | 2019-06-21 | 2020-01-17 | 錼创显示科技股份有限公司 | Semiconductor material substrate, micro light-emitting diode panel and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李鑫;王时飞;李钊;王旭迪;: "基于PDMS微结构模板转印技术的研究", 真空科学与技术学报, no. 06 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771986B (en) * | 2021-04-16 | 2022-07-21 | 友達光電股份有限公司 | A method of manufacturing an electronic device |
| WO2022247228A1 (en) * | 2021-05-28 | 2022-12-01 | 重庆翰博显示科技研发中心有限公司 | Microelectronic assembly discharge, transfer, and positioning apparatus and operating method therefor |
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|---|---|
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