JP2002313809A5 - - Google Patents
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- Publication number
- JP2002313809A5 JP2002313809A5 JP2002019256A JP2002019256A JP2002313809A5 JP 2002313809 A5 JP2002313809 A5 JP 2002313809A5 JP 2002019256 A JP2002019256 A JP 2002019256A JP 2002019256 A JP2002019256 A JP 2002019256A JP 2002313809 A5 JP2002313809 A5 JP 2002313809A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- semiconductor
- manufacturing
- impurity ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 132
- 150000002500 ions Chemical class 0.000 claims 25
- 238000004519 manufacturing process Methods 0.000 claims 25
- 239000012535 impurity Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 22
- 229910052710 silicon Inorganic materials 0.000 claims 17
- 239000010703 silicon Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 14
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000000059 patterning Methods 0.000 claims 8
- 239000000126 substance Substances 0.000 claims 8
- 230000003197 catalytic effect Effects 0.000 claims 5
- 238000002425 crystallisation Methods 0.000 claims 5
- 230000008025 crystallization Effects 0.000 claims 5
- 230000001737 promoting effect Effects 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019256A JP3942902B2 (ja) | 2001-01-26 | 2002-01-28 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-19293 | 2001-01-26 | ||
| JP2001019293 | 2001-01-26 | ||
| JP2002019256A JP3942902B2 (ja) | 2001-01-26 | 2002-01-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313809A JP2002313809A (ja) | 2002-10-25 |
| JP2002313809A5 true JP2002313809A5 (enExample) | 2005-08-04 |
| JP3942902B2 JP3942902B2 (ja) | 2007-07-11 |
Family
ID=26608391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002019256A Expired - Lifetime JP3942902B2 (ja) | 2001-01-26 | 2002-01-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3942902B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050287307A1 (en) * | 2004-06-23 | 2005-12-29 | Varian Semiconductor Equipment Associates, Inc. | Etch and deposition control for plasma implantation |
| JP2007294082A (ja) * | 2006-03-31 | 2007-11-08 | Semiconductor Energy Lab Co Ltd | Ｎａｎｄ型不揮発性メモリのデータ消去方法 |
-
2002
- 2002-01-28 JP JP2002019256A patent/JP3942902B2/ja not_active Expired - Lifetime
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