JP2002304155A - 発光装置 - Google Patents
発光装置Info
- Publication number
- JP2002304155A JP2002304155A JP2002009253A JP2002009253A JP2002304155A JP 2002304155 A JP2002304155 A JP 2002304155A JP 2002009253 A JP2002009253 A JP 2002009253A JP 2002009253 A JP2002009253 A JP 2002009253A JP 2002304155 A JP2002304155 A JP 2002304155A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- oled
- oleds
- voltage
- current value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims description 73
- 238000012937 correction Methods 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 67
- 238000013459 approach Methods 0.000 claims description 12
- 239000003086 colorant Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 21
- 230000006866 deterioration Effects 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 145
- 239000012535 impurity Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 41
- 239000011229 interlayer Substances 0.000 description 33
- 238000005530 etching Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- -1 acryl Chemical group 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- Y02B20/342—
-
- Y02B20/36—
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002009253A JP2002304155A (ja) | 2001-01-29 | 2002-01-17 | 発光装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-19651 | 2001-01-29 | ||
| JP2001019651 | 2001-01-29 | ||
| JP2002009253A JP2002304155A (ja) | 2001-01-29 | 2002-01-17 | 発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002304155A true JP2002304155A (ja) | 2002-10-18 |
| JP2002304155A5 JP2002304155A5 (enExample) | 2005-09-08 |
Family
ID=26608419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002009253A Withdrawn JP2002304155A (ja) | 2001-01-29 | 2002-01-17 | 発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002304155A (enExample) |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003066868A (ja) * | 2001-08-24 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 表示パネルおよびそれを用いた情報表示装置 |
| JP2004094236A (ja) * | 2002-08-09 | 2004-03-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2004170943A (ja) * | 2002-10-31 | 2004-06-17 | Semiconductor Energy Lab Co Ltd | 表示装置及びその制御方法 |
| JP2005055722A (ja) * | 2003-08-06 | 2005-03-03 | Nec Corp | 表示駆動回路及びそれを用いた表示装置 |
| JP2006011406A (ja) * | 2004-05-22 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
| JP2006047984A (ja) * | 2004-05-21 | 2006-02-16 | Semiconductor Energy Lab Co Ltd | 表示装置及びそれを用いた電子機器 |
| JP2006091860A (ja) * | 2004-08-23 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法並びに電子機器 |
| JP2006189826A (ja) * | 2004-12-31 | 2006-07-20 | Lg Phillips Lcd Co Ltd | 電界発光素子の駆動システム及び駆動方法 |
| US7081704B2 (en) | 2002-08-09 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100605347B1 (ko) | 2003-08-29 | 2006-07-28 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치, 전기 광학 장치의 구동 방법 및 전자 기기 |
| JP2007024952A (ja) * | 2005-07-12 | 2007-02-01 | Tohoku Pioneer Corp | 自発光表示装置及びその駆動方法 |
| JP2007208238A (ja) * | 2006-01-07 | 2007-08-16 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
| JP2007286341A (ja) * | 2006-04-17 | 2007-11-01 | Eastman Kodak Co | 表示装置 |
| US7442956B2 (en) | 2004-04-26 | 2008-10-28 | Seiko Epson Corporation | Organic EL device and electronic apparatus |
| JP2009513012A (ja) * | 2005-10-20 | 2009-03-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 照明デバイス |
| US7692611B2 (en) | 2003-08-25 | 2010-04-06 | Seiko Epson Corporation | Electro-optical device, driving method therefor, and electronic apparatus |
| US7773082B2 (en) | 2002-10-31 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| JP2011187408A (ja) * | 2010-03-11 | 2011-09-22 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法 |
| US8111215B2 (en) | 2004-05-22 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US8154189B2 (en) | 2006-01-07 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| JP2012083777A (ja) * | 2005-12-27 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2012098742A (ja) * | 2004-08-23 | 2012-05-24 | Semiconductor Energy Lab Co Ltd | 発光装置及びその駆動方法 |
| CN103426369A (zh) * | 2013-08-27 | 2013-12-04 | 京东方科技集团股份有限公司 | 显示屏 |
| CN103680407A (zh) * | 2013-12-17 | 2014-03-26 | 青岛海信电器股份有限公司 | 稳定有机电致发光显示器亮度的方法、装置及系统 |
| JP2015121812A (ja) * | 2004-12-06 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2020530595A (ja) * | 2017-08-14 | 2020-10-22 | 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． | タッチ表示パネル及びその駆動方法、電子装置 |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04254889A (ja) * | 1991-02-06 | 1992-09-10 | Pioneer Electron Corp | Ｅｌ表示装置 |
| JPH0744128A (ja) * | 1993-07-27 | 1995-02-14 | Matsushita Electron Corp | 気体放電型表示装置およびその駆動方法 |
| JPH09297554A (ja) * | 1996-05-08 | 1997-11-18 | Nippon Signal Co Ltd:The | Ｌｅｄ表示装置 |
| WO1998040871A1 (en) * | 1997-03-12 | 1998-09-17 | Seiko Epson Corporation | Pixel circuit, display device and electronic equipment having current-driven light-emitting device |
| JPH10254410A (ja) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス表示装置及びその駆動方法 |
| JPH10312173A (ja) * | 1997-05-09 | 1998-11-24 | Pioneer Electron Corp | 画像表示装置 |
| JPH10319908A (ja) * | 1997-04-14 | 1998-12-04 | Sarnoff Corp | アクティブマトリックス有機発光ダイオード（ａｍｏｌｅｄ）の表示ピクセル構造とそのためのデータロード／発光回路 |
| JPH11272223A (ja) * | 1998-03-26 | 1999-10-08 | Toyota Motor Corp | 発光ディスプレイ用電源装置 |
| JP2000056732A (ja) * | 1998-08-12 | 2000-02-25 | Tdk Corp | 有機ｅｌ表示装置 |
| JP2000221942A (ja) * | 1999-01-29 | 2000-08-11 | Nec Corp | 有機ｅｌ素子駆動装置 |
| JP2000347621A (ja) * | 1999-06-09 | 2000-12-15 | Nec Corp | 画像表示方法および装置 |
| JP2001223074A (ja) * | 2000-02-07 | 2001-08-17 | Futaba Corp | 有機エレクトロルミネッセンス素子及びその駆動方法 |
| JP2001236040A (ja) * | 2000-02-23 | 2001-08-31 | Tohoku Pioneer Corp | 表示装置 |
| JP2002023686A (ja) * | 2000-05-24 | 2002-01-23 | Eastman Kodak Co | 基準ピクセルを含む固体ディスプレイ |
-
2002
- 2002-01-17 JP JP2002009253A patent/JP2002304155A/ja not_active Withdrawn
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04254889A (ja) * | 1991-02-06 | 1992-09-10 | Pioneer Electron Corp | Ｅｌ表示装置 |
| JPH0744128A (ja) * | 1993-07-27 | 1995-02-14 | Matsushita Electron Corp | 気体放電型表示装置およびその駆動方法 |
| JPH09297554A (ja) * | 1996-05-08 | 1997-11-18 | Nippon Signal Co Ltd:The | Ｌｅｄ表示装置 |
| WO1998040871A1 (en) * | 1997-03-12 | 1998-09-17 | Seiko Epson Corporation | Pixel circuit, display device and electronic equipment having current-driven light-emitting device |
| JPH10254410A (ja) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス表示装置及びその駆動方法 |
| JPH10319908A (ja) * | 1997-04-14 | 1998-12-04 | Sarnoff Corp | アクティブマトリックス有機発光ダイオード（ａｍｏｌｅｄ）の表示ピクセル構造とそのためのデータロード／発光回路 |
| JPH10312173A (ja) * | 1997-05-09 | 1998-11-24 | Pioneer Electron Corp | 画像表示装置 |
| JPH11272223A (ja) * | 1998-03-26 | 1999-10-08 | Toyota Motor Corp | 発光ディスプレイ用電源装置 |
| JP2000056732A (ja) * | 1998-08-12 | 2000-02-25 | Tdk Corp | 有機ｅｌ表示装置 |
| JP2000221942A (ja) * | 1999-01-29 | 2000-08-11 | Nec Corp | 有機ｅｌ素子駆動装置 |
| JP2000347621A (ja) * | 1999-06-09 | 2000-12-15 | Nec Corp | 画像表示方法および装置 |
| JP2001223074A (ja) * | 2000-02-07 | 2001-08-17 | Futaba Corp | 有機エレクトロルミネッセンス素子及びその駆動方法 |
| JP2001236040A (ja) * | 2000-02-23 | 2001-08-31 | Tohoku Pioneer Corp | 表示装置 |
| JP2002023686A (ja) * | 2000-05-24 | 2002-01-23 | Eastman Kodak Co | 基準ピクセルを含む固体ディスプレイ |
Cited By (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003066868A (ja) * | 2001-08-24 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 表示パネルおよびそれを用いた情報表示装置 |
| US7329985B2 (en) | 2002-08-09 | 2008-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2004094236A (ja) * | 2002-08-09 | 2004-03-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US7081704B2 (en) | 2002-08-09 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8253660B2 (en) | 2002-10-31 | 2012-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| US8773333B2 (en) | 2002-10-31 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| US9147698B2 (en) | 2002-10-31 | 2015-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| JP2011248369A (ja) * | 2002-10-31 | 2011-12-08 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2004170943A (ja) * | 2002-10-31 | 2004-06-17 | Semiconductor Energy Lab Co Ltd | 表示装置及びその制御方法 |
| US7999769B2 (en) | 2002-10-31 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| US7773082B2 (en) | 2002-10-31 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and controlling method thereof |
| JP2005055722A (ja) * | 2003-08-06 | 2005-03-03 | Nec Corp | 表示駆動回路及びそれを用いた表示装置 |
| US7692611B2 (en) | 2003-08-25 | 2010-04-06 | Seiko Epson Corporation | Electro-optical device, driving method therefor, and electronic apparatus |
| KR100605347B1 (ko) | 2003-08-29 | 2006-07-28 | 세이코 엡슨 가부시키가이샤 | 전기 광학 장치, 전기 광학 장치의 구동 방법 및 전자 기기 |
| US7442956B2 (en) | 2004-04-26 | 2008-10-28 | Seiko Epson Corporation | Organic EL device and electronic apparatus |
| JP2006047984A (ja) * | 2004-05-21 | 2006-02-16 | Semiconductor Energy Lab Co Ltd | 表示装置及びそれを用いた電子機器 |
| JP2006011406A (ja) * | 2004-05-22 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
| US8111215B2 (en) | 2004-05-22 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR101123092B1 (ko) * | 2004-05-22 | 2012-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자장치 |
| JP2012098742A (ja) * | 2004-08-23 | 2012-05-24 | Semiconductor Energy Lab Co Ltd | 発光装置及びその駆動方法 |
| US8576147B2 (en) | 2004-08-23 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP2006091860A (ja) * | 2004-08-23 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法並びに電子機器 |
| US8194006B2 (en) | 2004-08-23 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the same, and electronic device comprising monitoring elements |
| JP2015121812A (ja) * | 2004-12-06 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7768487B2 (en) | 2004-12-31 | 2010-08-03 | Lg. Display Co., Ltd. | Driving system for an electro-luminescence display device |
| JP2006189826A (ja) * | 2004-12-31 | 2006-07-20 | Lg Phillips Lcd Co Ltd | 電界発光素子の駆動システム及び駆動方法 |
| JP2007024952A (ja) * | 2005-07-12 | 2007-02-01 | Tohoku Pioneer Corp | 自発光表示装置及びその駆動方法 |
| US7847766B2 (en) | 2005-07-12 | 2010-12-07 | Tohoku Pioneer Corporation | Self-emission display apparatus and method of driving the same |
| JP2009513012A (ja) * | 2005-10-20 | 2009-03-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 照明デバイス |
| JP2012083777A (ja) * | 2005-12-27 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8154189B2 (en) | 2006-01-07 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| JP2007208238A (ja) * | 2006-01-07 | 2007-08-16 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
| JP2007286341A (ja) * | 2006-04-17 | 2007-11-01 | Eastman Kodak Co | 表示装置 |
| JP2011187408A (ja) * | 2010-03-11 | 2011-09-22 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置及びその製造方法 |
| CN103426369A (zh) * | 2013-08-27 | 2013-12-04 | 京东方科技集团股份有限公司 | 显示屏 |
| CN103680407A (zh) * | 2013-12-17 | 2014-03-26 | 青岛海信电器股份有限公司 | 稳定有机电致发光显示器亮度的方法、装置及系统 |
| JP2020530595A (ja) * | 2017-08-14 | 2020-10-22 | 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． | タッチ表示パネル及びその駆動方法、電子装置 |
| JP7299023B2 (ja) | 2017-08-14 | 2023-06-27 | 京東方科技集團股▲ふん▼有限公司 | タッチ表示パネル及びその駆動方法、電子装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100843989B1 (ko) | 발광 장치 | |
| JP6651587B2 (ja) | 表示装置 | |
| JP5771718B2 (ja) | 発光装置 | |
| KR100858227B1 (ko) | 발광 장치 | |
| US10263059B2 (en) | Light emitting device | |
| JP2002304155A (ja) | 発光装置 | |
| US7612746B2 (en) | Light emitting device and electronic device | |
| JP2002311898A (ja) | 発光装置及びそれを用いた電子機器 | |
| JP2002333862A (ja) | 発光装置及び電子機器 | |
| JP2002251166A (ja) | 発光装置及び電子機器 | |
| US20030117388A1 (en) | Display device and electric equipment using the same | |
| JP2002304156A (ja) | 発光装置 | |
| JP2002323873A (ja) | 発光装置及び電子機器 | |
| JP2002278478A (ja) | 発光装置、発光装置の駆動方法及び電子機器 | |
| JP2007179066A (ja) | 表示装置及び電子機器 | |
| JP2003234188A (ja) | 表示装置およびそれを用いた電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050114 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050225 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050302 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060913 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071120 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080111 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080513 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080609 |