JP2002296601A - Method for laminating liquid crystal substrates - Google Patents

Method for laminating liquid crystal substrates

Info

Publication number
JP2002296601A
JP2002296601A JP2001100409A JP2001100409A JP2002296601A JP 2002296601 A JP2002296601 A JP 2002296601A JP 2001100409 A JP2001100409 A JP 2001100409A JP 2001100409 A JP2001100409 A JP 2001100409A JP 2002296601 A JP2002296601 A JP 2002296601A
Authority
JP
Japan
Prior art keywords
substrate
lower substrate
liquid crystal
substrates
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001100409A
Other languages
Japanese (ja)
Inventor
Masayuki Takahashi
正行 高橋
Hiroyuki Nagano
寛之 長野
Takanori Funahashi
隆憲 舟橋
Masakazu Hiraishi
正和 平石
Norihiko Egami
典彦 江上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001100409A priority Critical patent/JP2002296601A/en
Publication of JP2002296601A publication Critical patent/JP2002296601A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a method for laminating liquid crystal substrate allowing for liquid crystal substrates with the lower part and the upper part to be matched in position in a reliable and productive manner without much operation. SOLUTION: The lamination method for liquid crystal substrates is as follows: liquid crystal material 4 is dropped in the space surrounded by an annular seal-line 3 on the lower substrate 1 which is laid out inside a vacuum chamber 5. A rough positioning of the lower substrate 1 and upper substrate 2 is conducted by vacuum-chacking the upper substrate 2 in the vacuum chamber 5 to arrange it above facing the lower substrate 1. The inside of the vacuum chamber 5 is evacuated to a predetermined pressure and at least one of the substrates is moved toward the other substrate and pressure is applied. Afterwards the precise positioning of the lower substrate 1 and upper substrate 2 is conducted while making the inside of the chamber 5 the atmospheric pressure Pa, both the substrates 1, and 2 are stuck together.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置にお
ける液晶パネルを構成する基板を貼り合わせる液晶基板
の貼り合わせ方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for bonding a liquid crystal substrate for bonding substrates constituting a liquid crystal panel in a liquid crystal display device.

【0002】[0002]

【従来の技術】液晶表示装置における液晶パネルは、ガ
ラス基板などの透光性材料からなる下基板と上基板の間
に紫外線硬化型接着剤などから成る環状のシールライン
を介してそれらの間に例えば5μm程度の所定のギャッ
プを保って対向配置し、そのシールラインで囲まれたギ
ャップ内に液晶材料を充填して構成されている。
2. Description of the Related Art A liquid crystal panel in a liquid crystal display device is provided between a lower substrate made of a light-transmitting material such as a glass substrate and an upper substrate through an annular seal line made of an ultraviolet curing adhesive or the like. For example, they are arranged facing each other with a predetermined gap of about 5 μm, and a gap surrounded by the seal line is filled with a liquid crystal material.

【0003】このように下基板と上基板の間のギャップ
に液晶材料を充填した状態で下基板と上基板を貼り合わ
せる方法としては、下基板の上に接着剤を塗布して1又
は複数の環状のシールラインを形成し、そのシールライ
ンで囲まれた空間の内部に液晶材料を滴下し、次いでそ
の上部に上基板を配置して上基板と下基板のアライメン
ト(位置合わせ)を行い、その後上基板と下基板を重ね
合わせて上基板と下基板の間の間隔が所定ギャップにな
るまで加圧し、紫外線を照射してシールラインの接着剤
を硬化させる液晶滴下方法が、例えば特開平10−33
3157号公報などにおいて開示されている。
As a method of bonding the lower substrate and the upper substrate with the liquid crystal material filled in the gap between the lower substrate and the upper substrate, one or more adhesives are applied to the lower substrate by applying an adhesive. An annular seal line is formed, a liquid crystal material is dropped into a space surrounded by the seal line, and then an upper substrate is disposed thereon to perform alignment (alignment) between the upper substrate and the lower substrate. A method of dropping a liquid crystal in which an upper substrate and a lower substrate are overlapped and pressed until the distance between the upper substrate and the lower substrate becomes a predetermined gap, and ultraviolet light is applied to cure the adhesive in the seal line is disclosed in, for example, 33
No. 3157, for example.

【0004】このような液晶基板貼り合わせ方法の具体
例について、特開2000−137235号公報に開示
された方法を、図6を参照して説明する。まず、図6
(a)に示すように、上面に紫外線硬化型接着剤からな
るシール材を例えば厚み30μmで環状に塗布して環状
のシールライン23を形成し、そのシールライン23で
囲まれた空間に液晶材料24を滴下した下基板21を、
真空チャンバー25内の位置決めテーブル26上に弾性
スペーサ27を介して載置固定し、一方上基板22は吸
着盤28にて真空吸着して下基板21の上部に例えば
0.5mm程度の間隔をあけて対向配置し、その状態で
位置決めテーブル26を水平方向に位置調整して下基板
21と上基板22のアライメントを行う。
With respect to a specific example of such a liquid crystal substrate bonding method, a method disclosed in JP-A-2000-137235 will be described with reference to FIG. First, FIG.
As shown in (a), a sealing material made of an ultraviolet curable adhesive is applied on the upper surface in an annular shape with a thickness of, for example, 30 μm to form an annular sealing line 23, and a liquid crystal material is filled in a space surrounded by the sealing line 23. The lower substrate 21 on which 24 has been dropped is
The upper substrate 22 is placed and fixed on a positioning table 26 in a vacuum chamber 25 via an elastic spacer 27, while the upper substrate 22 is vacuum-sucked by a suction disk 28 and spaced above the lower substrate 21 by, for example, about 0.5 mm. The lower substrate 21 and the upper substrate 22 are aligned by adjusting the position of the positioning table 26 in the horizontal direction in this state.

【0005】次に、ギャップ内に気泡が混入しないよう
に、真空チャンバー25内を真空排気して例えば100
Pa以下の雰囲気圧力に保持した状態で、加圧手段29
にて吸着盤28を下降移動させて上基板22を下基板2
1に向けて垂直方向に移動させ、図6(b)に示すよう
に、下基板21と上基板22の間のギャップgが5μm
になるまで加圧し、下基板21と上基板22を貼り合わ
せる。その後、紫外線を照射してシールライン23を硬
化させて貼り合わせが完了する。
Next, the inside of the vacuum chamber 25 is evacuated to a vacuum of, for example, 100 to prevent air bubbles from entering the gap.
While maintaining the atmospheric pressure of Pa or less, the pressing means 29
The suction board 28 is moved downward to move the upper substrate 22 to the lower substrate 2.
1 and the gap g between the lower substrate 21 and the upper substrate 22 is 5 μm as shown in FIG.
And the lower substrate 21 and the upper substrate 22 are bonded together. After that, the sealing line 23 is cured by irradiating ultraviolet rays to complete the bonding.

【0006】なお、サブミクロンの精度が要求される下
基板21と上基板22の間のギャップgは、下基板21
と上基板22の間に介在されたビースや下基板21に突
設されたポストスペーサやシールライン23の接着剤に
充填されたファイバによって規制され、また下基板2
1、上基板22、位置決めテーブル26、吸着盤28の
平面度に関わりなく加圧によって上記所定のギャップg
の精度を確保するのに弾性スペーサ27が寄与してい
る。
The gap g between the lower substrate 21 and the upper substrate 22, which requires submicron precision, is
The lower substrate 2 is regulated by a bead interposed between the upper substrate 22 and a post spacer protruding from the lower substrate 21 or a fiber filled in the adhesive of the seal line 23.
1, regardless of the flatness of the upper substrate 22, the positioning table 26, and the suction disk 28, the predetermined gap g
The elastic spacer 27 contributes to ensuring the accuracy of the above.

【0007】[0007]

【発明が解決しようとする課題】ところで、下基板21
と上基板22の位置合わせ精度は1μm以下程度の高精
度が要求されるが、両基板21、22間に0.5mm程
度の間隔をあけて位置合わせした後両基板21、22を
加圧するため、加圧工程の間に両基板21、22が相対
変位するのを避けることができず、所望の位置合わせ精
度を確保するのが困難であるという問題がある。
The lower substrate 21
The alignment accuracy of the upper substrate 22 and the upper substrate 22 is required to be high accuracy of about 1 μm or less. However, since the alignment is performed with an interval of about 0.5 mm between the two substrates 21 and 22, the two substrates 21 and 22 are pressed. In addition, the relative displacement between the substrates 21 and 22 during the pressing process cannot be avoided, and there is a problem that it is difficult to secure desired alignment accuracy.

【0008】そこで、両基板21、22を加圧した後、
再度両基板21、22の精細位置合わせを行うことが考
えられるが、真空チャンバー25内の100Pa程度の
雰囲気中で20〜30Pa程度の圧力の吸着盤28にて
上基板22が吸着固定されているため、その差圧による
吸着力は小さく、位置合わせ時に吸着盤28と上基板2
2の間で滑りを生じ、上基板22と下基板21の位置合
わせができない場合が生じるという問題があった。
Therefore, after both substrates 21 and 22 are pressed,
It is conceivable that the fine positioning of the two substrates 21 and 22 is performed again. However, the upper substrate 22 is suction-fixed by the suction disk 28 having a pressure of about 20 to 30 Pa in an atmosphere of about 100 Pa in the vacuum chamber 25. Therefore, the suction force due to the pressure difference is small, and the suction board 28 and the upper substrate 2
There is a problem that a slip may occur between the two and the upper substrate 22 and the lower substrate 21 may not be aligned.

【0009】また、下基板21が弾性スペーサ27を介
して位置決めテーブル26上に設置固定されているの
で、数μm〜10数μm程度の位置調整を位置決めテー
ブル26の調整移動によって行おうとしても、弾性スペ
ーサ27の弾性と弾性余効による変形によって吸収され
てしまい、何度も調整動作を繰り返すことになって調整
に長時間を要し、生産性を著しく低下させるという問題
があった。
Further, since the lower substrate 21 is installed and fixed on the positioning table 26 via the elastic spacer 27, even if the position adjustment of about several μm to several tens μm is attempted by the adjustment movement of the positioning table 26, The elastic spacer 27 is absorbed by the deformation due to the elasticity and the elastic after-effect, so that the adjusting operation is repeated many times, so that it takes a long time for the adjusting and there is a problem that the productivity is remarkably reduced.

【0010】本発明は、上記従来の問題に鑑み、下基板
と上基板の位置合わせを確実にかつ少ない調整動作で生
産性良く行うことができる液晶基板の貼り合わせ方法を
提供することを目的としている。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a method of bonding liquid crystal substrates which can perform alignment of a lower substrate and an upper substrate reliably and with a small number of adjustment operations with high productivity. I have.

【0011】[0011]

【課題を解決するための手段】本発明の液晶基板の貼り
合わせ方法は、下基板上の環状のシールラインで囲まれ
た空間に液晶材料を滴下し、この下基板を真空チャンバ
ー内に配置し、真空チャンバー内で上基板を真空吸着し
て下基板上に対向配置し、下基板と上基板の粗位置合わ
せを行い、真空チャンバー内を所定圧力に真空排気して
少なくとも一方の基板を相手側に向けて移動させて加圧
し、その後真空チャンバー内の圧力を高くして下基板と
上基板の精細位置合わせを行い、両基板を貼り合わせる
ものであり、真空排気した真空チャンバー内で上基板と
下基板を加圧して両基板間のギャップ内の気泡を排除し
た後、真空チャンバーの圧力を高くすることで、上基板
の吸引圧と雰囲気圧の差圧を大きくして吸着力を大きく
でき、加圧後の精細位置合わせ時に上基板の吸着面で滑
りを生じる恐れがなく、上基板と下基板の位置合わせを
確実に行うことができる。
According to a method of bonding a liquid crystal substrate of the present invention, a liquid crystal material is dropped into a space surrounded by an annular seal line on a lower substrate, and the lower substrate is placed in a vacuum chamber. In a vacuum chamber, the upper substrate is vacuum-adsorbed and placed on the lower substrate so as to face the lower substrate. The lower substrate and the upper substrate are roughly aligned, and the inside of the vacuum chamber is evacuated to a predetermined pressure to at least one of the substrates. And then pressurize, then raise the pressure in the vacuum chamber to finely align the lower and upper substrates, and bond the two substrates together. After removing the air bubbles in the gap between both substrates by pressing the lower substrate, the pressure in the vacuum chamber is increased, so that the differential pressure between the suction pressure of the upper substrate and the atmospheric pressure can be increased, and the suction force can be increased. After pressurizing There is no possibility of slippage in the suction surface of the upper substrate during the alignment, it is possible to align the upper and lower substrates reliably.

【0012】また、下基板上の環状のシールラインで囲
まれた空間に液晶材料を滴下し、この下基板を真空チャ
ンバー内に配置し、真空チャンバー内で上基板を真空吸
着して下基板上に対向配置し、下基板と上基板の粗位置
合わせを行い、真空チャンバー内を所定圧力に真空排気
して少なくとも一方の基板を相手側に向けて移動させて
加圧し、その後下基板と上基板の精細位置合わせを行
い、両基板を貼り合わせる液晶基板の貼り合わせ方法に
おいて、粗位置合わせ時に、少なくとも一方の基板とそ
の支持体との間に介装された弾性スペーサの弾性と弾性
余効によるバックラッシュと位置調整機構のメカニカル
バックラッシュの和よりも大きい量だけ変位した位置に
位置合わせを行い、精細位置合わせ時に指定位置に向け
て一方向にのみ位置調整するものであり、基板とその支
持体との間に弾性スペーサを介装することで、基板やそ
の支持面の平面度が低くても加圧時に下基板と上基板間
のギャップ精度を確保でき、かつ位置調整を一方向にの
み行うようにしているので、この弾性スペーサと位置調
整機構のバックラッシュを1回目の位置調整動作によっ
て吸収した後、バックラッシュの無い状態で、少ない位
置調整動作にて短時間で高精度の位置合わせを完了する
ことができ、生産性を向上できる。
Further, a liquid crystal material is dropped into a space surrounded by an annular seal line on the lower substrate, the lower substrate is placed in a vacuum chamber, and the upper substrate is vacuum-adsorbed in the vacuum chamber to remove the upper substrate. The lower substrate and the upper substrate are roughly aligned, the inside of the vacuum chamber is evacuated to a predetermined pressure, and at least one of the substrates is moved toward the other side and pressurized. In the method of laminating the liquid crystal substrates for bonding the two substrates, the elastic alignment and the elastic after-effect of the elastic spacers interposed between at least one of the substrates and the support thereof during the rough alignment. Performs positioning at a position displaced by an amount larger than the sum of the backlash and the mechanical backlash of the position adjustment mechanism, and positions only in one direction toward the specified position during fine positioning. An elastic spacer is interposed between the substrate and its support to ensure the gap accuracy between the lower and upper substrates during pressurization even when the flatness of the substrate and its support surface is low. Since the position adjustment can be performed only in one direction and the backlash of the elastic spacer and the position adjustment mechanism is absorbed by the first position adjustment operation, a small position adjustment operation is performed without backlash. Thus, highly accurate positioning can be completed in a short time, and productivity can be improved.

【0013】なお、上記一方向とは、一直線状の一方向
という意味ではなく、第1回目の位置調整方向に対して
戻り方向の成分を持たない方向を意味する。
Note that the one direction does not mean one direction in a straight line, but means a direction having no component in the return direction with respect to the first position adjustment direction.

【0014】又、下基板と上基板を加圧した後、下基板
と上基板の精細位置合わせを行う前に、上記のように真
空チャンバー内の圧力を高くするのが好ましい。
After the lower substrate and the upper substrate are pressurized, it is preferable to increase the pressure in the vacuum chamber as described above before the fine alignment of the lower substrate and the upper substrate is performed.

【0015】また、下基板上の環状のシールラインで囲
まれた空間に液晶材料を滴下し、この下基板を真空チャ
ンバー内に配置し、真空チャンバー内で上基板を真空吸
着して下基板上に対向配置し、下基板と上基板の粗位置
合わせを行い、真空チャンバー内を所定圧力に真空排気
して少なくとも一方の基板を相手側に向けて移動させて
加圧し、その後下基板と上基板の精細位置合わせを行
い、両基板を貼り合わせる液晶基板の貼り合わせ方法に
おいて、精細位置合わせ時に、基板とその支持体との間
に介装された弾性スペーサの弾性と弾性余効によるバッ
クラッシュと位置調整機構のメカニカルバックラッシュ
を補正項として加算して位置調整量を演算し、指定位置
に向けて位置調整することによっても、上記と同様に調
整動作時にバックラッシュの影響を排除して、少ない位
置調整動作にて短時間で高精度の位置合わせを完了する
ことができ、生産性を向上できる。
Further, a liquid crystal material is dropped into a space surrounded by an annular seal line on the lower substrate, and the lower substrate is placed in a vacuum chamber. The lower substrate and the upper substrate are roughly aligned, the inside of the vacuum chamber is evacuated to a predetermined pressure, and at least one of the substrates is moved toward the other side and pressurized. In the method of laminating the liquid crystal substrates, both substrates are adhered to each other, and during the fine alignment, the backlash due to the elasticity of the elastic spacers interposed between the substrate and its support and the elastic aftereffect is generated. The position adjustment amount is calculated by adding the mechanical backlash of the position adjustment mechanism as a correction term, and the position is adjusted toward the specified position. By eliminating the influence of the shoe, can complete a high precision alignment in a short time with a small position adjustment operation, the productivity can be improved.

【0016】この際も、下基板と上基板を加圧した後、
下基板と上基板の精細位置合わせを行う前に、上記のよ
うに真空チャンバー内の圧力を高くするのが好ましい。
In this case, after pressing the lower substrate and the upper substrate,
Before the fine alignment of the lower substrate and the upper substrate is performed, it is preferable to increase the pressure in the vacuum chamber as described above.

【0017】[0017]

【発明の実施の形態】以下、本発明の液晶基板の貼り合
わせ方法の一実施形態について、図1〜図5を参照して
説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the method for bonding liquid crystal substrates according to the present invention will be described below with reference to FIGS.

【0018】図1、図2に、下基板1と上基板2の間の
ギャップgに形成されたシールライン3で囲まれた空間
に液晶材料4を充填して成る液晶基板を製造する工程を
示す。まず、図1(a)に示すように、下基板1の上面
に紫外線硬化型接着剤からなるシール材を環状に塗布し
て環状のシールライン3を形成し、そのシールライン3
で囲まれた空間に液晶材料4を滴下し、この下基板1を
真空チャンバー5内の位置決めテーブル6上に硬質ゴム
等から成る弾性スペーサ7を介して載置固定する。位置
決めテーブル6は下基板1の水平方向の位置決めを行
う。
FIGS. 1 and 2 show a process of manufacturing a liquid crystal substrate in which a space surrounded by a seal line 3 formed in a gap g between a lower substrate 1 and an upper substrate 2 is filled with a liquid crystal material 4. Show. First, as shown in FIG. 1A, an annular seal line 3 is formed by applying a sealing material made of an ultraviolet curable adhesive in an annular shape on the upper surface of the lower substrate 1, and the annular sealing line 3 is formed.
The liquid crystal material 4 is dropped into the space surrounded by the circle, and the lower substrate 1 is placed and fixed on the positioning table 6 in the vacuum chamber 5 via the elastic spacer 7 made of hard rubber or the like. The positioning table 6 positions the lower substrate 1 in the horizontal direction.

【0019】下基板1と上基板2は例えば550mm×
670mmの大きさであり、下基板1及び上基板2に
は、これら基板1、2で作製する液晶パネルの数に応じ
て1又は複数の画像表示域(以下、表示セルと称する)
が形成されており、環状のシールライン3は各表示セル
毎にその周囲を取り囲むように塗布形成する。
The lower substrate 1 and the upper substrate 2 are, for example, 550 mm ×
The lower substrate 1 and the upper substrate 2 each have a size of 670 mm, and one or a plurality of image display areas (hereinafter, referred to as display cells) according to the number of liquid crystal panels to be manufactured on the substrates 1 and 2.
Is formed, and the annular seal line 3 is formed by application so as to surround the periphery of each display cell.

【0020】液晶材料4は、各表示セル毎にその充填深
さが所定のギャップgと等しい、例えば5μmになるよ
うにその滴下量が正確に制御される。なお、液晶材料4
を滴下した状態ではその粘性によって図1(a)に示す
ように山形を呈する。シールライン3は、下基板1と上
基板2を加圧するときに、この液晶材料4が不測にその
上を乗り越えてはみ出すことがないように、適当な高さ
で塗布する必要があり、従来は十分な余裕を持って30
μm程度になるように塗布していたが、本実施形態で
は、液晶材料4がはみ出さない範囲でできるだけ低い高
さに設定している。具体的には、液晶材料4の充填深さ
をt、シールライン3の高さをTとして、t<T<4
t、好適には2t<T<3Tに設定している。すなわ
ち、液晶材料4の充填深さが5μmとして、シールライ
ン3の高さを5〜20μm、好適には10〜15μmに
設定しており、これによってシールライン3で囲まれた
空間内に閉じ込められる空気量を低減でき、ギャップ内
に気泡が混入するのを防止することができる。
The amount of liquid crystal material 4 to be dropped is precisely controlled so that the filling depth of each liquid crystal cell is equal to a predetermined gap g, for example, 5 μm. The liquid crystal material 4
In a state where is dropped, it has a mountain shape due to its viscosity as shown in FIG. When the lower substrate 1 and the upper substrate 2 are pressurized, the seal line 3 must be applied at an appropriate height so that the liquid crystal material 4 does not unexpectedly run over the lower substrate 1 and the upper substrate 2. 30 with plenty of time
In this embodiment, the height is set as low as possible within a range where the liquid crystal material 4 does not protrude. Specifically, assuming that the filling depth of the liquid crystal material 4 is t and the height of the seal line 3 is T, t <T <4
t, preferably 2t <T <3T. That is, the filling depth of the liquid crystal material 4 is set to 5 μm, and the height of the seal line 3 is set to 5 to 20 μm, preferably 10 to 15 μm, whereby the liquid crystal material 4 is confined in a space surrounded by the seal line 3. The amount of air can be reduced, and air bubbles can be prevented from entering the gap.

【0021】次に、上基板2を吸着盤8にて真空吸着
し、真空チャンバー5内に挿入配置するとともに、真空
チャンバー5内を50〜400Pa、好適には150P
a程度の圧力P1 に真空排気する。吸着盤8の吸着圧力
は、上基板2や吸着盤8の吸着面の平面度を特別に良く
しなくても短時間で達成できる圧力範囲である20〜3
0Paに設定されている。これによって上基板2を短時
間で吸着保持でき、かつ真空排気された真空チャンバー
5内の50〜400Paの圧力との間で100Pa程度
の十分な圧力差が得られ、吸着保持した上基板2が不測
に落下して損傷する恐れを無くすことができる。
Next, the upper substrate 2 is vacuum-sucked by the suction disk 8 and inserted and arranged in the vacuum chamber 5, and the inside of the vacuum chamber 5 is filled with 50 to 400 Pa, preferably 150 P
evacuated to a pressure P 1 of about a. The suction pressure of the suction disk 8 is a pressure range of 20 to 3 which can be achieved in a short time without particularly improving the flatness of the suction surface of the upper substrate 2 or the suction disk 8.
It is set to 0 Pa. As a result, the upper substrate 2 can be sucked and held in a short time, and a sufficient pressure difference of about 100 Pa is obtained between the pressure of 50 to 400 Pa in the evacuated vacuum chamber 5. It is possible to eliminate the risk of accidental drop and damage.

【0022】次に、吸着盤8の上下移動と加圧力の負荷
を行う移動加圧手段9にて、吸着盤8にて吸着保持した
上基板2を下基板1の上部に例えば0.5〜1mm程度
の間隔Dをあけて対向配置し、対向配置された上基板1
と下基板2にそれぞれ設けられている位置決めマーク
(図4の12、13を参照)を画像認識し、その認識結
果に応じて位置決めマークが概略一致するように位置決
めテーブル6を矢印Aで示すように水平方向に移動調整
して粗位置合わせを行う。
Next, the upper substrate 2 sucked and held by the suction disk 8 is moved to the upper portion of the lower substrate 1 by, for example, 0.5 to 0.5 mm by a moving pressurizing means 9 for vertically moving the suction disk 8 and applying a pressing force. The upper substrate 1 which is opposed to each other at an interval D of about 1 mm,
And the positioning marks provided on the lower substrate 2 (see 12 and 13 in FIG. 4) are image-recognized, and the positioning table 6 is indicated by an arrow A so that the positioning marks substantially match according to the recognition result. To adjust the coarse position by moving in the horizontal direction.

【0023】この粗位置合わせ時には、両位置決めマー
クを完全に一致させるように位置調整するのではなく、
後で詳述するように、下基板1と位置決めテーブル6の
間に介装された弾性スペーサ7の弾性と弾性余効による
バックラッシュと位置調整機構のメカニカルバックラッ
シュの和よりも大きい量、例えば20〜30μm程度変
位した位置に意図的に位置合わせを行う。
At the time of the coarse positioning, the position is not adjusted so that both positioning marks are completely coincident with each other.
As will be described later in detail, an amount larger than the sum of the backlash due to the elasticity and elastic aftereffect of the elastic spacer 7 interposed between the lower substrate 1 and the positioning table 6 and the mechanical backlash of the position adjusting mechanism, for example, Positioning is intentionally performed at a position displaced by about 20 to 30 μm.

【0024】吸着盤8の四隅部には高さ規制部材10が
配設され、位置決めテーブル6の四隅部の高さ規制部材
10に対向する位置には上下方向のリニアアクチュエー
タ11が配設されており、次に、図1(b)に示すよう
に、各高さ規制部材10がリニアアクチュエータ11に
当接するまで吸着盤8を下降させる。各高さ規制部材1
0は、上基板2の一端側がシールライン3に接触し、上
基板2の他端側は下基板1に対して例えば500μm程
度以上の所定間隔dだけあくように上基板2が傾斜して
いる状態でそれぞれリニアアクチュエータ11に当接す
るようにその長さ寸法が調整設定されている。
At four corners of the suction cup 8, height regulating members 10 are arranged. At four corners of the positioning table 6 opposed to the height regulating members 10, vertical actuators 11 are arranged. Then, as shown in FIG. 1B, the suction disk 8 is lowered until each height regulating member 10 comes into contact with the linear actuator 11. Each height regulating member 1
0, the upper substrate 2 is inclined such that one end of the upper substrate 2 contacts the seal line 3 and the other end of the upper substrate 2 is spaced from the lower substrate 1 by a predetermined distance d of, for example, about 500 μm or more. The length dimension is adjusted and set so that the linear actuator 11 abuts in each state.

【0025】次に、真空チャンバー5内を真空排気し、
その圧力状態を50〜400PaのP1 から10〜50
PaのP2 まで真空度を高める。また、すべてのリニア
アクチュエータ11を30〜300μm/sec程度の
所定の速度Vで下降動作させ、吸着盤8とともに上基板
2を上記傾斜姿勢からその傾斜を無くしつつ、下基板1
に向けて移動させ、その後、図1(c)に示すように、
引き続いて移動加圧手段9にて下基板1と上基板2の間
が所定のギャップgになるまで所定の加圧力にて加圧す
る。これによって、下基板1と上基板2が、それらの間
のギャップg内に混入される可能性のある気泡を一端側
から他端側に押し出しながら貼り合わされ、ギャップ内
への気泡の混入を防止できる。
Next, the inside of the vacuum chamber 5 is evacuated,
The pressure state from P 1 of 50~400Pa 10~50
Increase the degree of vacuum until the P 2 of Pa. Further, all the linear actuators 11 are moved down at a predetermined speed V of about 30 to 300 μm / sec, and the lower substrate 1 is moved together with the suction plate 8 while the upper substrate 2 is removed from the above-mentioned inclined posture.
, And then, as shown in FIG.
Subsequently, pressure is applied by a predetermined pressure until the gap between the lower substrate 1 and the upper substrate 2 reaches a predetermined gap g. As a result, the lower substrate 1 and the upper substrate 2 are bonded together while extruding bubbles that may be mixed into the gap g between them from one end to the other end, thereby preventing the mixing of bubbles into the gap. it can.

【0026】次に、図2に示すように、真空チャンバー
5内をP1 よりも高い圧力、例えば大気に開放して大気
圧Paに戻した後、位置決めテーブル6を矢印Bで示す
ように水平方向に移動調整し、図3、図4に示すよう
に、下基板1の位置決めマーク12と上基板2の位置決
めマーク13が完全一致するように精細位置合わせを行
う。図示例では、位置決めマーク12は小さい方形状、
位置決めマーク13は方形枠状で、位置決めマーク13
の中心に位置決めマーク12を位置させるように位置合
わせを行う。
Next, as shown in FIG. 2, after the inside of the vacuum chamber 5 is released to a pressure higher than P 1 , for example, the atmosphere and returned to the atmospheric pressure Pa, the positioning table 6 is moved horizontally as indicated by an arrow B. Then, as shown in FIGS. 3 and 4, fine positioning is performed so that the positioning marks 12 on the lower substrate 1 and the positioning marks 13 on the upper substrate 2 completely match. In the illustrated example, the positioning mark 12 has a small square shape,
The positioning mark 13 has a rectangular frame shape.
Are positioned so that the positioning mark 12 is positioned at the center of the position.

【0027】この精細位置合わせ時に、図3(a)に示
すように、下基板1と上基板2の間のギャップgを、下
基板1に固着したビーズ14にて規正している場合に
は、ビーズ14と上基板2の間の摩擦力が小さいため、
矢印aの如くこの間で比較的容易に相対移動して位置合
わせができる可能性が高いが、図3(b)に示すよう
に、下基板1から突設したポストスペーサ15にて規正
している場合には、ポストスペーサ15と上基板2の間
の摩擦力が大きいため、矢印bの如く上基板2と吸着盤
8の間で相対移動して位置合わせができない恐れが高
い。
At the time of this fine alignment, as shown in FIG. 3A, when the gap g between the lower substrate 1 and the upper substrate 2 is regulated by the beads 14 fixed to the lower substrate 1, Since the frictional force between the beads 14 and the upper substrate 2 is small,
As shown by the arrow a, there is a high possibility that positioning can be performed by relatively moving relatively easily during this time. However, as shown in FIG. 3B, the positioning is performed by the post spacer 15 protruding from the lower substrate 1. In such a case, since the frictional force between the post spacer 15 and the upper substrate 2 is large, there is a high possibility that the relative movement between the upper substrate 2 and the suction plate 8 as shown by the arrow b makes the positioning impossible.

【0028】そこで、本実施形態では上記のように真空
チャンバー5内の圧力を高くしている。かくして、吸着
盤8による吸着圧力の20〜30Paとの圧力差が大き
くなって上基板2が吸着盤8に大きな力で吸着固定さ
れ、それによって圧接後の下基板1と上基板2の相対移
動に対する抵抗力が大きくても、吸着盤8と上基板2と
の間で滑りを生じることなく、確実に位置合わせを行う
ことができる。
Therefore, in this embodiment, the pressure in the vacuum chamber 5 is increased as described above. Thus, the pressure difference between the suction pressure of the suction plate 8 and the suction pressure of 20 to 30 Pa becomes large, and the upper substrate 2 is fixed to the suction plate 8 by suction with a large force, whereby the relative movement between the lower substrate 1 and the upper substrate 2 after the pressing is performed. Even if the resistance force is large, it is possible to surely perform the alignment without causing a slip between the suction plate 8 and the upper substrate 2.

【0029】また、この精細位置合わせに先立つ粗位置
決めに際して、上述のように弾性スペーサ7の弾性と弾
性余効によるバックラッシュと位置調整機構のメカニカ
ルバックラッシュの和よりも大きい量だけ変位した位置
に意図的に位置合わせしているので、図4に示すよう
に、下基板1の位置決めマーク12と上基板2の位置決
めマーク13との間にほぼ20〜30μm程度の調整距
離Cが存在している。
In the rough positioning prior to the fine positioning, the position is shifted by an amount larger than the sum of the backlash due to the elasticity and elastic aftereffect of the elastic spacer 7 and the mechanical backlash of the position adjusting mechanism as described above. Since the alignment is intentionally performed, there is an adjustment distance C of about 20 to 30 μm between the positioning mark 12 of the lower substrate 1 and the positioning mark 13 of the upper substrate 2 as shown in FIG. .

【0030】ここで、バックラッシュとしては同じであ
るので、位置調整機構のメカニカルバックラッシュを弾
性スペーサ7のバックラッシュに含め、弾性スペーサ7
のバックラッシュのみ存在するものとして、精細位置合
わせ動作を説明する。
Here, since the backlash is the same, the mechanical backlash of the position adjusting mechanism is included in the backlash of the elastic spacer 7, and the elastic spacer 7
The fine positioning operation will be described on the assumption that only the backlash exists.

【0031】第1回目の位置調整動作は、位置決めマー
ク12、13間の検出距離に対応する調整指令距離Cだ
け位置調整する。すると、硬質ゴムなどの弾性スペーサ
7は、金属などに比べて小さい弾性係数を持つとともに
弾性余効が非常に大きいため、図5(a)、(b)に示
すように、調整指令距離Cだけ位置決めテーブル6をB
方向に位置調整しても、弾性スペーサ7の弾性変形によ
って距離Dだけ吸収される。なお、その後の位置調整に
必要な時間内で、弾性スペーサ7は同一方向の移動に対
してそれ以上は殆ど変形しない。本明細書では、この弾
性スペーサ7の弾性変形量Dを弾性スペーサ7のバック
ラッシュと呼んでいる。
In the first position adjustment operation, the position is adjusted by the adjustment command distance C corresponding to the detection distance between the positioning marks 12 and 13. Then, since the elastic spacer 7 such as a hard rubber has a small elastic coefficient and a very large elastic after-effect compared to a metal or the like, as shown in FIGS. Positioning table 6 is B
Even if the position is adjusted in the direction, it is absorbed by the distance D by the elastic deformation of the elastic spacer 7. It should be noted that the elastic spacer 7 hardly deforms further in the same direction of movement within the time required for the subsequent position adjustment. In this specification, the amount of elastic deformation D of the elastic spacer 7 is called backlash of the elastic spacer 7.

【0032】従って、上記のように第1回目の位置調整
動作にて調整指令距離Cだけ位置調整すると、下基板1
は(C−D)=Eだけ位置調整される。そこで、次に両
位置決めマーク12、13間の距離を検出し(その検出
距離はほぼDに等しい)、その検出距離を越えない範囲
で次の調整指令距離Fを設定して第2回目の位置調整動
作を行うと、バックラッシュの影響を受けないため、精
度良く位置調整でき、両位置決めマーク12、13間の
検出距離は微少でかつ同一方向にプラス値のGとなる。
このGの値が、所定の位置合わせ精度の1μm以下であ
れば、精細位置合わせ動作はこの2回の動作で終了し、
それ以上であればもう一度調整動作を行うことによって
ほぼ精細位置合わせ動作を完了することができる。この
ように、逆方向に位置調整を行わず、一方向にのみ位置
調整することによって2回目の位置調整動作以降にバッ
クラッシュの影響を受けず、少ない調整動作にて高精度
の位置合わせを行うことができる。
Therefore, when the position is adjusted by the adjustment command distance C in the first position adjustment operation as described above, the lower substrate 1
Is adjusted by (CD) = E. Then, the distance between the two positioning marks 12 and 13 is detected next (the detection distance is substantially equal to D), and the next adjustment command distance F is set within a range not exceeding the detection distance, and the second position is determined. When the adjustment operation is performed, the position can be adjusted with high accuracy because it is not affected by the backlash, and the detection distance between the two positioning marks 12 and 13 is very small and becomes a positive value G in the same direction.
If the value of G is 1 μm or less of the predetermined alignment accuracy, the fine alignment operation is completed by these two operations,
If it is more than that, the fine positioning operation can be almost completed by performing the adjusting operation again. In this manner, by performing position adjustment in only one direction without performing position adjustment in the opposite direction, the position is not affected by backlash after the second position adjustment operation, and high-accuracy position adjustment is performed with a small adjustment operation. be able to.

【0033】こうして下基板1と上基板2を加圧し、精
細位置合わせを行った後、紫外線を照射してシールライ
ン3を硬化させることにより、下基板1と上基板2の貼
り合わせが完了する。
After the lower substrate 1 and the upper substrate 2 are pressurized and finely aligned as described above, the bonding of the lower substrate 1 and the upper substrate 2 is completed by irradiating ultraviolet rays to cure the seal line 3. .

【0034】以上のように、本実施形態によれば、粗位
置合わせ時に、弾性スペーサ7の弾性と弾性余効による
バックラッシュと位置決めテーブル6の移動機構のメカ
ニカルバックラッシュの和よりも大きい量だけ変位した
位置に位置合わせを行っておき、精細位置合わせ時に指
定位置に向けて一方向にのみ位置調整するようにしたの
で、下基板1と位置決めテーブル6との間に弾性スペー
サ7を介装することで、基板1、2やその支持面の平面
度が低くても加圧時に下基板1と上基板2間のギャップ
精度を確保でき、かつ位置調整を一方向にのみ行うた
め、弾性スペーサ7と位置決めテーブル6の移動機構の
バックラッシュを1回目の位置調整動作によって吸収し
た後、バックラッシュのほぼ無い状態で、少ない位置調
整動作にて短時間で高精度の位置合わせを完了すること
ができ、生産性を向上できる。
As described above, according to the present embodiment, the amount of backlash caused by the elasticity and elastic aftereffect of the elastic spacer 7 and the mechanical backlash of the moving mechanism of the positioning table 6 during the coarse positioning are larger than the sum of the backlash. Positioning is performed at the displaced position, and the position is adjusted only in one direction toward the designated position at the time of fine positioning. Therefore, the elastic spacer 7 is interposed between the lower substrate 1 and the positioning table 6. Thus, even if the flatness of the substrates 1 and 2 and the supporting surfaces thereof is low, the gap accuracy between the lower substrate 1 and the upper substrate 2 can be ensured at the time of pressing and the position adjustment is performed only in one direction. After the backlash of the moving mechanism of the positioning table 6 is absorbed by the first position adjustment operation, the position adjustment operation is performed in a short time in a state where there is almost no backlash. Can complete the alignment precision, the productivity can be improved.

【0035】以上の実施形態では、粗位置合わせ時に弾
性スペーサ7と位置調整機構のバックラッシュよりも大
きい量だけ変位した位置に位置合わせを行っておいて、
精細位置合わせ時に指定位置に向けて一方向にのみ位置
調整する例を示したが、下基板1と上基板2の粗位置合
わせを適宜に行い、下基板1と上基板2の加圧後の下基
板1と上基板2の精細位置合わせ時に、下基板1とその
位置決めテーブル6との間に介装された弾性スペーサ7
の弾性と弾性余効によるバックラッシュと位置決めテー
ブル6の移動機構のメカニカルバックラッシュを予め測
定しておいて、それを補正項として加算して位置調整量
を演算し、指定位置に向けて位置調整してもよい。
In the above embodiment, the position is adjusted to a position displaced by an amount larger than the backlash of the elastic spacer 7 and the position adjusting mechanism at the time of the coarse position adjustment.
Although an example in which the position is adjusted only in one direction toward the designated position at the time of the fine alignment has been described, the rough alignment of the lower substrate 1 and the upper substrate 2 is appropriately performed, and the lower substrate 1 and the upper substrate 2 after pressing are adjusted. An elastic spacer 7 interposed between the lower substrate 1 and its positioning table 6 when the lower substrate 1 and the upper substrate 2 are finely aligned.
The backlash due to the elasticity and the elastic aftereffect and the mechanical backlash of the moving mechanism of the positioning table 6 are measured in advance, and the results are added as a correction term to calculate a position adjustment amount, and the position is adjusted toward the designated position. May be.

【0036】このように位置合わせを行っても、上記と
同様に調整動作時にバックラッシュの影響を排除して、
少ない位置調整動作にて短時間で高精度の位置合わせを
完了することができ、生産性を向上できる。
Even if the positioning is performed in this manner, the influence of backlash during the adjustment operation is eliminated in the same manner as described above.
High-precision alignment can be completed in a short time with a small number of position adjustment operations, and productivity can be improved.

【0037】なお、上記実施形態では、下基板1に対し
て上基板2を移動させて加圧するようにしたが、逆に上
基板2に対して下基板1を移動させて加圧しても、両者
を移動させて加圧してもよいことは言うまでもない。ま
た、下基板1と位置決めテーブル6の間に弾性スペーサ
7を介装した例を示したが、上基板2と吸着盤8の間に
弾性スペーサを介装しても、両方に弾性スペーサを介装
してもよい。また、位置合わせ時に位置決めテーブル6
にて下基板1を移動調整するようにしたが、吸着盤8を
移動調整するように構成してもよい。
In the above embodiment, the upper substrate 2 is moved and pressurized with respect to the lower substrate 1. However, if the lower substrate 1 is moved and pressurized with respect to the upper substrate 2, It goes without saying that both may be moved and pressurized. Although the example in which the elastic spacer 7 is interposed between the lower substrate 1 and the positioning table 6 is shown, even if the elastic spacer is interposed between the upper substrate 2 and the suction plate 8, the elastic spacer is interposed in both. May be worn. Also, when positioning, the positioning table 6
Although the lower substrate 1 is moved and adjusted in the above, the suction plate 8 may be moved and adjusted.

【0038】[0038]

【発明の効果】本発明の液晶基板の貼り合わせ方法によ
れば、真空排気した真空チャンバー内で上基板と下基板
を加圧して両基板間のギャップ内の気泡を排除した後、
真空チャンバーの圧力を高くするので、上基板の吸引圧
と雰囲気圧の差圧を大きくして吸着力を大きくでき、加
圧後の精細位置合わせ時に上基板の吸着面で滑りを生じ
る恐れがなく、上基板と下基板の位置合わせを確実に行
うことができる。
According to the liquid crystal substrate bonding method of the present invention, after the upper substrate and the lower substrate are pressurized in the evacuated vacuum chamber to eliminate bubbles in the gap between the two substrates,
Since the pressure in the vacuum chamber is increased, the suction force can be increased by increasing the differential pressure between the suction pressure of the upper substrate and the ambient pressure, and there is no danger of slipping on the suction surface of the upper substrate during fine positioning after pressing. Thus, the alignment between the upper substrate and the lower substrate can be reliably performed.

【0039】また、粗位置合わせ時に、少なくとも一方
の基板とその支持体との間に介装された弾性スペーサの
弾性と弾性余効によるバックラッシュと位置調整機構の
メカニカルバックラッシュの和よりも大きい量だけ変位
した位置に位置合わせを行い、精細位置合わせ時に指定
位置に向けて略一方向にのみ位置調整するので、基板と
その支持体との間に介装した弾性スペーサにて基板やそ
の支持面の平面度が低くても加圧時に下基板と上基板間
のギャップ精度を確保でき、かつこの弾性スペーサと位
置調整機構のバックラッシュを1回目の位置調整動作に
よって吸収した後、バックラッシュの無い状態で、少な
い位置調整動作にて短時間で高精度の位置合わせを完了
することができ、生産性を向上できる。
Also, at the time of rough positioning, the backlash due to the elasticity and elastic aftereffect of the elastic spacer interposed between at least one substrate and its support and the mechanical backlash of the position adjusting mechanism are larger than the sum. The position is adjusted to the position displaced by the amount, and the position is adjusted in only one direction toward the specified position at the time of fine alignment, so the elastic spacer interposed between the substrate and its support supports the substrate and its support Even if the flatness of the surface is low, the gap accuracy between the lower substrate and the upper substrate can be secured during pressurization, and the backlash of the elastic spacer and the position adjustment mechanism is absorbed by the first position adjustment operation. In a state where there is no positioning operation, high-precision positioning can be completed in a short time with a small number of position adjustment operations, and productivity can be improved.

【0040】また、精細位置合わせ時に、基板とその支
持体との間に介装された弾性スペーサの弾性と弾性余効
によるバックラッシュと位置調整機構のメカニカルバッ
クラッシュを補正項として加算して位置調整量を演算
し、指定位置に向けて位置調整することによっても、上
記と同様に調整動作時にバックラッシュの影響を排除し
て、少ない位置調整動作にて短時間で高精度の位置合わ
せを完了することができ、生産性を向上できる。
Further, at the time of fine positioning, the backlash due to the elasticity and elastic aftereffect of the elastic spacer interposed between the substrate and its support and the mechanical backlash of the position adjusting mechanism are added as correction terms to obtain the position. By calculating the amount of adjustment and adjusting the position toward the specified position, the effects of backlash during the adjustment operation are eliminated in the same way as described above, and highly accurate alignment is completed in a short time with a small amount of position adjustment operation And productivity can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態における液晶基板貼り合わ
せ工程を示す断面図である。
FIG. 1 is a cross-sectional view illustrating a liquid crystal substrate bonding step in one embodiment of the present invention.

【図2】同実施形態における加圧後の精細位置合わせ動
作工程を示す断面図である。
FIG. 2 is a sectional view showing a fine positioning operation step after pressing in the embodiment.

【図3】精細位置合わせ動作と異なったギャップ規正ス
ペーサにおける挙動例を説明する断面図である。
FIG. 3 is a cross-sectional view illustrating an example of behavior in a gap setting spacer different from the fine positioning operation.

【図4】同実施形態における位置合わせ動作の説明図で
ある。
FIG. 4 is an explanatory diagram of a positioning operation in the embodiment.

【図5】同実施形態における位置合わせ動作時の弾性ス
ペーサの挙動特性の説明図である。
FIG. 5 is an explanatory diagram of a behavior characteristic of the elastic spacer at the time of an alignment operation in the embodiment.

【図6】従来例の液晶基板貼り合わせ工程を示す断面図
である。
FIG. 6 is a sectional view showing a conventional liquid crystal substrate bonding step.

【符号の説明】[Explanation of symbols]

1 下基板 2 上基板 3 シールライン 4 液晶材料 5 真空チャンバー 6 位置決めテーブル 7 弾性スペーサ 8 吸着盤 Reference Signs List 1 lower substrate 2 upper substrate 3 seal line 4 liquid crystal material 5 vacuum chamber 6 positioning table 7 elastic spacer 8 suction disk

───────────────────────────────────────────────────── フロントページの続き (72)発明者 舟橋 隆憲 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 平石 正和 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 江上 典彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 2H089 LA41 NA22 NA38 NA49 NA60 QA12 QA14  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takanori Funabashi 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 72) Inventor Norihiko Egami 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. (reference) 2H089 LA41 NA22 NA38 NA49 NA60 QA12 QA14

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 下基板上の環状のシールラインで囲まれ
た空間に液晶材料を滴下し、この下基板を真空チャンバ
ー内に配置し、真空チャンバー内で上基板を真空吸着し
て下基板上に対向配置し、下基板と上基板の粗位置合わ
せを行い、真空チャンバー内を所定圧力に真空排気して
少なくとも一方の基板を相手側に向けて移動させて加圧
し、その後真空チャンバー内の圧力を高くして下基板と
上基板の精細位置合わせを行い、両基板を貼り合わせる
ことを特徴とする液晶基板の貼り合わせ方法。
1. A liquid crystal material is dropped into a space surrounded by an annular seal line on a lower substrate, the lower substrate is placed in a vacuum chamber, and the upper substrate is vacuum-adsorbed in the vacuum chamber to form a liquid crystal material on the lower substrate. The lower substrate and the upper substrate are roughly aligned, and the inside of the vacuum chamber is evacuated to a predetermined pressure, and at least one of the substrates is moved toward the other side and pressurized. A liquid crystal substrate bonding method, wherein the lower substrate and the upper substrate are finely aligned with each other, and the two substrates are bonded together.
【請求項2】 下基板上の環状のシールラインで囲まれ
た空間に液晶材料を滴下し、この下基板を真空チャンバ
ー内に配置し、真空チャンバー内で上基板を真空吸着し
て下基板上に対向配置し、下基板と上基板の粗位置合わ
せを行い、真空チャンバー内を所定圧力に真空排気して
少なくとも一方の基板を相手側に向けて移動させて加圧
し、その後下基板と上基板の精細位置合わせを行い、両
基板を貼り合わせる液晶基板の貼り合わせ方法におい
て、粗位置合わせ時に、少なくとも一方の基板とその支
持体との間に介装された弾性スペーサの弾性と弾性余効
によるバックラッシュと位置調整機構のメカニカルバッ
クラッシュの和よりも大きい量だけ変位した位置に位置
合わせを行い、精細位置合わせ時に指定位置に向けて一
方向にのみ位置調整することを特徴とする液晶基板の貼
り合わせ方法。
2. A liquid crystal material is dropped into a space surrounded by an annular seal line on the lower substrate, and the lower substrate is placed in a vacuum chamber, and the upper substrate is vacuum-adsorbed in the vacuum chamber and The lower substrate and the upper substrate are roughly aligned, the inside of the vacuum chamber is evacuated to a predetermined pressure, and at least one of the substrates is moved toward the other side and pressurized. In the method of laminating the liquid crystal substrates, in which the two substrates are bonded together, in the rough positioning, the elasticity and elastic aftereffect of the elastic spacers interposed between at least one of the substrates and the support thereof Performs position adjustment to a position displaced by an amount greater than the sum of the backlash and the mechanical backlash of the position adjustment mechanism, and adjusts the position only in one direction toward the specified position during fine alignment. A method for bonding a liquid crystal substrate.
【請求項3】 下基板上の環状のシールラインで囲まれ
た空間に液晶材料を滴下し、この下基板を真空チャンバ
ー内に配置し、真空チャンバー内で上基板を真空吸着し
て下基板上に対向配置し、下基板と上基板の粗位置合わ
せを行い、真空チャンバー内を所定圧力に真空排気して
少なくとも一方の基板を相手側に向けて移動させて加圧
し、その後下基板と上基板の精細位置合わせを行い、両
基板を貼り合わせる液晶基板の貼り合わせ方法におい
て、精細位置合わせ時に、少なくとも一方の基板とその
支持体との間に介装された弾性スペーサの弾性と弾性余
効によるバックラッシュと位置調整機構のメカニカルバ
ックラッシュを補正項として加算して位置調整量を演算
し、指定位置に向けて位置調整することを特徴とする液
晶基板の貼り合わせ方法。
3. A liquid crystal material is dropped into a space surrounded by an annular seal line on the lower substrate, the lower substrate is placed in a vacuum chamber, and the upper substrate is vacuum-adsorbed in the vacuum chamber to form a liquid crystal material on the lower substrate. The lower substrate and the upper substrate are roughly aligned, the inside of the vacuum chamber is evacuated to a predetermined pressure, and at least one of the substrates is moved toward the other side and pressurized. In the method of bonding a liquid crystal substrate for bonding the two substrates together, the fine alignment is performed by the elasticity and elastic after-effect of an elastic spacer interposed between at least one of the substrates and its support. A method of attaching a liquid crystal substrate, wherein a backlash and a mechanical backlash of a position adjustment mechanism are added as correction terms to calculate a position adjustment amount, and the position is adjusted toward a specified position. Law.
【請求項4】 下基板と上基板を加圧した後、下基板と
上基板の精細位置合わせを行う前に、真空チャンバー内
の圧力を高くすることを特徴とする請求項2又は3記載
の液晶基板の貼り合わせ方法。
4. The method according to claim 2, wherein after the lower substrate and the upper substrate are pressurized, the pressure in the vacuum chamber is increased before fine alignment of the lower substrate and the upper substrate is performed. A method for bonding liquid crystal substrates.
JP2001100409A 2001-03-30 2001-03-30 Method for laminating liquid crystal substrates Pending JP2002296601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001100409A JP2002296601A (en) 2001-03-30 2001-03-30 Method for laminating liquid crystal substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001100409A JP2002296601A (en) 2001-03-30 2001-03-30 Method for laminating liquid crystal substrates

Publications (1)

Publication Number Publication Date
JP2002296601A true JP2002296601A (en) 2002-10-09

Family

ID=18953852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001100409A Pending JP2002296601A (en) 2001-03-30 2001-03-30 Method for laminating liquid crystal substrates

Country Status (1)

Country Link
JP (1) JP2002296601A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010145533A (en) * 2008-12-16 2010-07-01 Advanced Display Process Engineering Co Ltd Substrate bonding device
KR20120093742A (en) 2011-02-15 2012-08-23 조요고가쿠 가부시키가이샤 Sealing method and apparatus thereof
KR101490413B1 (en) * 2012-12-28 2015-02-04 엘아이지에이디피 주식회사 Apparatus for bonding substrates
CN112198682A (en) * 2019-07-08 2021-01-08 夏普株式会社 Liquid crystal panel attaching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010145533A (en) * 2008-12-16 2010-07-01 Advanced Display Process Engineering Co Ltd Substrate bonding device
KR20120093742A (en) 2011-02-15 2012-08-23 조요고가쿠 가부시키가이샤 Sealing method and apparatus thereof
KR101490413B1 (en) * 2012-12-28 2015-02-04 엘아이지에이디피 주식회사 Apparatus for bonding substrates
CN112198682A (en) * 2019-07-08 2021-01-08 夏普株式会社 Liquid crystal panel attaching device
CN112198682B (en) * 2019-07-08 2023-07-04 夏普株式会社 Attaching device of liquid crystal panel

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