JP2002275639A - シード層堆積 - Google Patents

シード層堆積

Info

Publication number
JP2002275639A
JP2002275639A JP2001325754A JP2001325754A JP2002275639A JP 2002275639 A JP2002275639 A JP 2002275639A JP 2001325754 A JP2001325754 A JP 2001325754A JP 2001325754 A JP2001325754 A JP 2001325754A JP 2002275639 A JP2002275639 A JP 2002275639A
Authority
JP
Japan
Prior art keywords
copper
substrate
seed layer
layer
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001325754A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002275639A5 (enExample
Inventor
James G Shelnut
ジェームズ・ジー・シェルナット
David Merricks
デービッド・メリックス
Oleh B Dutkewych
オレウ・ビー・ドゥトゥケウイッチ
Charles R Shipley
チャールズ・アール・シプレイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2002275639A publication Critical patent/JP2002275639A/ja
Publication of JP2002275639A5 publication Critical patent/JP2002275639A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1664—Process features with additional means during the plating process
    • C23C18/1671—Electric field
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001325754A 2000-10-25 2001-10-24 シード層堆積 Withdrawn JP2002275639A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24308600P 2000-10-25 2000-10-25
US60/243086 2000-10-25

Publications (2)

Publication Number Publication Date
JP2002275639A true JP2002275639A (ja) 2002-09-25
JP2002275639A5 JP2002275639A5 (enExample) 2005-06-30

Family

ID=22917315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001325754A Withdrawn JP2002275639A (ja) 2000-10-25 2001-10-24 シード層堆積

Country Status (3)

Country Link
JP (1) JP2002275639A (enExample)
KR (1) KR20020032348A (enExample)
TW (1) TW521325B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005200666A (ja) * 2004-01-13 2005-07-28 C Uyemura & Co Ltd 無電解銅めっき浴
WO2010016358A1 (ja) * 2008-08-07 2010-02-11 日鉱金属株式会社 無電解めっきにより銅薄膜を形成しためっき物
JP2010275572A (ja) * 2009-05-26 2010-12-09 Jx Nippon Mining & Metals Corp 貫通シリコンビアを有するめっき物及びその形成方法
JP2012157833A (ja) * 2011-02-01 2012-08-23 Toyota Motor Corp 触媒微粒子の製造方法、当該方法により製造される触媒微粒子、及び当該触媒微粒子を含む燃料電池用電極触媒
JP2012192334A (ja) * 2011-03-16 2012-10-11 Toyota Motor Corp 触媒微粒子の製造方法
KR20160150028A (ko) * 2015-06-19 2016-12-28 도쿄엘렉트론가부시키가이샤 도금 처리 방법 및 도금 처리 부품 그리고 도금 처리 시스템
KR20190042570A (ko) * 2016-09-15 2019-04-24 인텔 코포레이션 니켈-주석 마이크로범프 구조체 및 이의 제조 방법

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005200666A (ja) * 2004-01-13 2005-07-28 C Uyemura & Co Ltd 無電解銅めっき浴
JP5300156B2 (ja) * 2008-08-07 2013-09-25 Ｊｘ日鉱日石金属株式会社 無電解めっきにより銅薄膜を形成しためっき物
WO2010016358A1 (ja) * 2008-08-07 2010-02-11 日鉱金属株式会社 無電解めっきにより銅薄膜を形成しためっき物
US8283051B2 (en) 2008-08-07 2012-10-09 Jx Nippon Mining & Metals Corporation Plated product having copper thin film formed thereon by electroless plating
JP2010275572A (ja) * 2009-05-26 2010-12-09 Jx Nippon Mining & Metals Corp 貫通シリコンビアを有するめっき物及びその形成方法
JP2012157833A (ja) * 2011-02-01 2012-08-23 Toyota Motor Corp 触媒微粒子の製造方法、当該方法により製造される触媒微粒子、及び当該触媒微粒子を含む燃料電池用電極触媒
JP2012192334A (ja) * 2011-03-16 2012-10-11 Toyota Motor Corp 触媒微粒子の製造方法
KR20160150028A (ko) * 2015-06-19 2016-12-28 도쿄엘렉트론가부시키가이샤 도금 처리 방법 및 도금 처리 부품 그리고 도금 처리 시스템
JP2017008353A (ja) * 2015-06-19 2017-01-12 東京エレクトロン株式会社 めっき処理方法及びめっき処理部品並びにめっき処理システム
US10179950B2 (en) 2015-06-19 2019-01-15 Tokyo Electron Limited Plating method, plated component, and plating system
KR102623085B1 (ko) * 2015-06-19 2024-01-09 도쿄엘렉트론가부시키가이샤 도금 처리 방법 및 도금 처리 부품 그리고 도금 처리 시스템
KR20190042570A (ko) * 2016-09-15 2019-04-24 인텔 코포레이션 니켈-주석 마이크로범프 구조체 및 이의 제조 방법
KR102527049B1 (ko) * 2016-09-15 2023-04-27 인텔 코포레이션 니켈-주석 마이크로범프 구조체 및 이의 제조 방법

Also Published As

Publication number Publication date
TW521325B (en) 2003-02-21
KR20020032348A (ko) 2002-05-03

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