JP2002275639A5 - - Google Patents
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- Publication number
- JP2002275639A5 JP2002275639A5 JP2001325754A JP2001325754A JP2002275639A5 JP 2002275639 A5 JP2002275639 A5 JP 2002275639A5 JP 2001325754 A JP2001325754 A JP 2001325754A JP 2001325754 A JP2001325754 A JP 2001325754A JP 2002275639 A5 JP2002275639 A5 JP 2002275639A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- conductive layer
- electroless
- substrate
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- -1 tungsten nitride Chemical class 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 2
- 239000003638 chemical reducing agent Substances 0.000 claims 2
- 239000008139 complexing agent Substances 0.000 claims 2
- 229910001431 copper ion Inorganic materials 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24308600P | 2000-10-25 | 2000-10-25 | |
| US60/243086 | 2000-10-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002275639A JP2002275639A (ja) | 2002-09-25 |
| JP2002275639A5 true JP2002275639A5 (enExample) | 2005-06-30 |
Family
ID=22917315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001325754A Withdrawn JP2002275639A (ja) | 2000-10-25 | 2001-10-24 | シード層堆積 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2002275639A (enExample) |
| KR (1) | KR20020032348A (enExample) |
| TW (1) | TW521325B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4663243B2 (ja) * | 2004-01-13 | 2011-04-06 | 上村工業株式会社 | 無電解銅めっき浴 |
| WO2010016358A1 (ja) * | 2008-08-07 | 2010-02-11 | 日鉱金属株式会社 | 無電解めっきにより銅薄膜を形成しためっき物 |
| JP5388191B2 (ja) * | 2009-05-26 | 2014-01-15 | Ｊｘ日鉱日石金属株式会社 | 貫通シリコンビアを有するめっき物及びその形成方法 |
| JP5678698B2 (ja) * | 2011-02-01 | 2015-03-04 | トヨタ自動車株式会社 | 触媒微粒子の製造方法 |
| JP5664370B2 (ja) * | 2011-03-16 | 2015-02-04 | トヨタ自動車株式会社 | 触媒微粒子の製造方法 |
| JP6527030B2 (ja) * | 2015-06-19 | 2019-06-05 | 東京エレクトロン株式会社 | めっき処理方法及びめっき処理部品並びにめっき処理システム |
| US10297563B2 (en) * | 2016-09-15 | 2019-05-21 | Intel Corporation | Copper seed layer and nickel-tin microbump structures |
-
2001
- 2001-10-24 KR KR1020010065624A patent/KR20020032348A/ko not_active Ceased
- 2001-10-24 JP JP2001325754A patent/JP2002275639A/ja not_active Withdrawn
- 2001-10-25 TW TW90126462A patent/TW521325B/zh not_active IP Right Cessation
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