JP2002249868A - Vapor deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To shorten the distance between a substrate for vapor deposition and outlet holes while keeping the uniformity of vapor deposition and to attain the improvement of vapor deposition ratio and the miniaturization of a chamber. SOLUTION: A transfer pipe 60 for transferring evaporated organic metal 100 from an evaporation chamber 30a to the vicinity of a vapor deposition surface 200a of a glass substrate 200 is provided, and also a plurality of outlet holes 62a for the discharge of the evaporated organic metal 100 are provided to a discharge part 62, as a part facing the vapor deposition surface 200a, of the transfer pipe 60. By this method, as compared with the case where the discharge is done directly into a chamber 20 via an outlet hole 30b opening in the upper part of a crucible 30 of the conventional vapor deposition system, the uniformity of vapor deposition onto the vapor deposition surface can be maintained even if the distance L1 between the vapor deposition surface 200a and the outlet holes 62a is shortened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a physical vapor deposition (PV)
The present invention also relates to a vapor deposition device for vapor-depositing on a plate to be vapor-deposited by D).

[0002]

2. Description of the Related Art In a conventional vapor deposition apparatus shown in FIG. 8, a vapor deposition material 10 serving as an evaporation source is placed in a chamber 20 having a reduced pressure.
The crucible 30 includes a crucible 30 and a deposition target plate 200 horizontally held above the crucible 30. And crucible 30
The evaporation material 100 heated and evaporated by the above is discharged into the chamber 20 as it is from the discharge port 30b opened at the top of the crucible 30, and is deposited on the deposition target plate 200.

[0003] Then, the deposition target plate 200 and the crucible 30 are disposed far apart from each other so that the deposition material 100 is sufficiently diffused in the horizontal direction, thereby making the deposition on the deposition target plate 200 uniform. . Generally, the deposition target plate 2
The distance L1 between the position 00 and the discharge port 30b is set to be about three times the length L2 of one side of the deposition target plate 200.

[0004]

However, when the distance L1 between the deposition target plate 200 and the discharge port 30b is increased as in the above-described conventional apparatus, most of the deposition material 100 is reduced.
However, there is a problem that it does not adhere to the inner surface of the chamber 20 without adhering. In particular, frequent cleaning of the inner surface of the chamber 20 has greatly reduced work efficiency. Incidentally, when the size of L1 is three times as large as L2, the rate of deposition of the deposition material 100 in the crucible 30 (deposition rate) is about 6%.

When the distance L1 between the deposition target plate 200 and the discharge port 30b is increased, the size of the chamber 20 is increased, so that the time required for evacuating the chamber 20 becomes longer and the energy consumption for evacuating the chamber 20 becomes longer. There was a problem that it became large.

SUMMARY OF THE INVENTION In view of the above, the present invention aims to improve the deposition rate and reduce the size of the chamber by reducing the distance between the deposition target plate and the discharge port while maintaining the uniformity of the deposition on the deposition target plate. The purpose is to:

[0007]

In order to achieve the above object, according to the first aspect of the present invention, a deposition material (100) is deposited by a physical vapor deposition method in a chamber (20) having a decompressed inside. In the vapor deposition device for vapor deposition on (200), an evaporation chamber (30a) for heating and vaporizing the vapor deposition material (100) communicates with the evaporation chamber (30a), and the evaporation chamber (3) is formed.
0a) and a transfer tube (60) for transferring the deposition material (100) from the vicinity of the deposition surface (200a) of the deposition target plate (200), and a portion of the transfer tube (60) facing the deposition surface (200a). Is provided on the vapor deposition surface (200).
A plurality of outlets (62a) for discharging the deposition material (100) toward a) are formed.

Thus, the evaporated substance (100)
Is forcibly deposited by the transfer tube (60).
It is transported to the vicinity, and then discharged toward the vapor deposition surface (200a) from the plurality of discharge ports (62a) formed at positions opposite to the vapor deposition surface (200a). Therefore,
As compared with the case where the discharge port (30b) opened at the top of the crucible (30) by the conventional vapor deposition apparatus is discharged directly into the chamber (20), the vapor deposition surface (200a) and the discharge port (62) are used.
Even if the distance from the point (a) is reduced, uniformity of deposition on the deposition surface (200a) can be maintained. Therefore, it is possible to improve the deposition rate and reduce the size of the chamber (20) while maintaining the uniformity of the deposition on the deposition target plate (200).

When the transfer pipe (60) is at a low temperature below a predetermined temperature, the evaporated deposition material (100) tends to adhere to the inner surface of the transfer pipe (60), and in particular, the discharge port (62).
In a), the deposition material (100) is easily clogged. On the other hand, according to the second aspect of the present invention, since the heating means (70) for heating the transfer pipe (60) is provided, the deposition material (100) adheres to the inner surface of the transfer pipe (60). Also, clogging of the discharge port (62a) can be suppressed.

In the invention according to claim 3, the chamber (2)
0), a holding member (5) holding the deposition target plate (200).
0), wherein at least one of the holding member (50) and the emission portion (62) is movable parallel to the vapor deposition surface (200a), so that the vapor deposition surface (200a)
The uniformity of vapor deposition on the vapor deposition surface (200a) can be improved without increasing the distance between the discharge port and the discharge port (62a).

According to the invention described in claim 4, the transfer pipe (6
The emission section (62) of (0) is formed so as to extend substantially parallel to the vapor deposition surface (200a). As a result, the evaporated deposition material (100) is deposited on the deposition surface (20).
Since the transfer is performed so as to spread in parallel to 0a), the uniformity of the deposition on the deposition surface (200a) can be improved without increasing the distance between the deposition surface (200a) and the discharge port (62a).

By the way, since the pressure of the vapor deposition material (100) in the downstream part in the discharge part (62) becomes lower due to the discharge from the discharge port (62a) in the upstream part, the pressure in the discharge part (62a) in the downstream part is reduced. The volume is measured at the outlet (62
The emission amount is smaller than the emission amount of a), and the uniformity of evaporation on the evaporation surface (200a) is impaired. On the other hand, in the invention according to claim 5, the discharge section (62)
Among them, a downstream heating means (71) for heating a downstream portion in a transport direction of the deposition material (100) and an upstream heating means (72) for heating an upstream portion, and the downstream and upstream heating means (71) are provided. , 72) are individually adjustable.

Thus, if the degree of heating by the downstream heating means (71) is made larger than the degree of heating by the upstream heating means (72), and the temperature of the vapor deposition material (100) on the downstream side is raised, the discharge section The pressure drop in the downstream portion of (62) can be suppressed, and the discharge amount of the discharge port (62a) in the downstream portion can be suppressed from being smaller than the discharge amount of the discharge port (62a) in the upstream portion.

According to the sixth aspect of the present invention, of the plurality of outlets (62a), the outlet (62a) located on the downstream side in the transport direction of the deposition material (100) is changed to the outlet located on the upstream side. Since it is characterized in that it is formed with an opening area larger than (62a), it is possible to suppress the emission amount of the emission port (62a) in the downstream portion from being smaller than the emission amount of the emission port (62a) in the upstream portion. .

In the invention according to claim 7, the vapor deposition material (1
00), a discharge port (62a) located on the downstream side in the transfer direction.
The interval (P2) of the discharge port (62a) located on the upstream side
, The discharge amount from the downstream portion of the discharge portion (62) can be suppressed from being smaller than the discharge amount from the upstream portion.

In the invention according to claim 8, the discharge port (62)
a) a discharge port (62a) located at the most downstream position in the transport direction of the deposition material (100) and a discharge section (62);
The distance (L3) from the tip of the lowermost position is the lowermost position discharge port (62).
a) and a distance (P4) between the discharge port (62a) located next to the discharge port (62a) at the most downstream position.

As a result, a space (62b) having a predetermined length (L3) is formed between the discharge port (62a) at the most downstream position and the tip of the discharge section (62) in the discharge section (62). .
Therefore, the pressure pulsation of the vapor deposition material (100) transferred from the upstream side to the most downstream position discharge port (62a) can be absorbed by the vapor deposition material (100) in the space (62b), and the space (62b) is Since it functions as a so-called surge tank, it is possible to suppress a temporary decrease in the discharge pressure of the discharge port (62a) at the most downstream position due to the pulsation.
Therefore, it is possible to suppress a temporary decrease in the amount of discharge at the most downstream position discharge port (62a).

According to a ninth aspect of the present invention, a plurality of emission portions (62) are arranged in parallel on a plane parallel to the vapor deposition surface (200a). Thereby, the discharge part (6
2) in the extending direction and 2 in the parallel direction of the discharge portion (62).
Since the discharge ports (62a) can be arranged side by side in the direction, the deposition material (100) can be discharged two-dimensionally to the deposition surface (200a), and the uniformity of deposition on the deposition surface (200a) can be improved.

Here, even if the amount of discharge from the discharge port (62a) in the downstream portion is smaller than the amount of discharge from the discharge port (62a) in the upstream portion, the invention according to claim 10 is provided. As described above, if the deposition materials (100) in the adjacent emission portions (62) are transferred in the directions facing each other, uniformity of deposition on the deposition surface (200a) can be easily secured. .

The reference numerals in parentheses of the above means are examples showing the correspondence with specific means described in the embodiments described later.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment)
In the manufacturing process of an organic electroluminescence element (hereinafter, referred to as an organic EL element), the present invention is applied to a vapor deposition apparatus for forming an organic metal (vapor deposition substance) for forming a light emitting layer on a glass substrate (plate to be vapor deposited). The case where the device is used is shown. Incidentally, this organic EL element is a known organic EL element in which a first electrode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode layer are sequentially laminated on a glass substrate. It is.

FIG. 1 is a view showing the overall configuration of the vapor deposition apparatus of the present embodiment. The inside of the vapor deposition apparatus is depressurized by a vacuum pump 10 (for example, about 1.33 × 10 ⁻⁴ Pa (about 1 × 10 ⁻⁶ torr).
r) In the formed film forming chamber 20, the evaporated organic metal 100 is deposited on the glass substrate 20 by physical vapor deposition (PVD).
In this case, the film is formed by vapor deposition to zero. The film forming chamber 20 is formed so that it can be divided and assembled and disassembled. The work of supplying the organic metal 100 to the inside of the film forming chamber 20 and the work of attaching and detaching the glass substrate 200 are performed by dividing and disassembling the film forming chamber 20. Is performed.

A crucible 30 for storing a solid organic metal (for example, Alq3 (aluminum quinolyl), CuPC (copper phthalocyanine), etc.) 100 as an evaporation source is arranged in a lower portion in the film forming chamber 20. A sheath heater (heating means) 40, which generates heat when energized, is wound around the outer peripheral surface thereof. The evaporation chamber 30 a in the crucible 30 is filled with the organic metal 100 heated and evaporated by the sheath heater 40. In addition, in this embodiment, it heats at about 320 degreeC.

On the other hand, a holding member (for example, a susceptor) 50 for horizontally holding a plate-like glass substrate 200 is provided in an upper portion in the film forming chamber 20. It is rotatably mounted. The upper part of the crucible 30 communicates with the evaporation chamber 30a, and the evaporation surface 30a of the glass plate 200 extends from the evaporation chamber 30a.
While transferring the evaporated organic metal 100 to the vicinity of a,
A cylindrical transfer pipe 60 for discharging the evaporated organic metal 100 into the deposition chamber 20 toward the deposition surface 200a is provided.

The transfer tube 60 has an elbow-shaped transfer portion 61 which extends upward from the upper portion of the crucible 30 and then bends by approximately 90 degrees.
And an emission unit 62 formed to extend substantially parallel to the deposition surface 200a at a lower portion of the deposition surface 200a and to transport the evaporated organic metal 100 so as to spread in parallel with the deposition surface 200a. It is composed of And
A plurality of discharge ports 6 for discharging the evaporated organic metal 100 upward are provided in a part of the discharge part 62 facing the deposition surface 200a.
2a is formed.

Note that, in the present embodiment, the discharging section 62 is
Has a length L2 substantially the same as one side of the glass substrate 200 in the left-right direction, and nine discharge ports 62a are formed in a row in the longitudinal direction at equal intervals (P1 = about 33 mm). The opening shape of the discharge port 62a is a circle having a diameter of about 0.5 mm.

The distance L1 between the glass mounting plate 200 and the discharge port 62a is set to be at least smaller than the length L2 of one side of the glass substrate 200.
The distance L1 (for example, about 90 mm) between the glass mounting plate 200 and the discharge port 62a is set to be about 0.45 times the length L2 (for example, about 200 mm) of one side of the glass substrate 200.

A sheath heater (heating means) 70 which generates heat by energization is wound around the outer peripheral surface of the transfer pipe 60, and the transfer pipe 60 is heated to a predetermined temperature (for example, 3 ° C.).
(00 ° C). Thereby, the evaporated organic metal 100 adheres to the inner surface of the transfer pipe 60 and the discharge port 62.
a is prevented from being clogged.

Next, the operation of the vapor deposition apparatus having the above configuration will be described.

First, the glass substrate 200 is attached to the holding member 50 in a state where the film forming chamber 20 is divided and disassembled.
Further, a solid organic metal 100 serving as an evaporation source is supplied into the crucible 30. After that, the film forming chamber 20 is assembled, and the pressure inside the film forming chamber 20 is reduced by the vacuum pump 10. Then, a current is supplied to the sheath heater 40 so that the organic metal 10
Heat 0 to evaporate. The evaporated organic metal 100 is
The transfer unit 61 of the transfer pipe 60 forcibly deposits the deposition surface 200a.
Is transported to the vicinity, and thereafter, by the emission unit 62, the deposition surface 2
It is transported so as to spread in the left-right direction of FIG. Then, the evaporated organic metal 100 is discharged into the film forming chamber 20 from the plurality of discharge ports 62 a opening to the discharge part 62 toward the deposition surface 200, and adheres to the deposition surface 200 a of the glass substrate 200 to be deposited.

As described above, the evaporated organic metal 100 is
Since the light is emitted from the plurality of emission ports 62a formed at positions opposite to the deposition surface 200a, the distance L1 between the deposition surface 200a and the emission port 62a is set to the length L of one side of the glass substrate 200.
2 (in this embodiment, L1 = 0.45 ×
L2) It is possible to maintain uniformity of vapor deposition on the vapor deposition surface 200a, and while maintaining uniformity of vapor deposition on the glass mounting plate 200,
The deposition rate can be improved and the size of the chamber 20 can be reduced. By the way, the deposition rate by the conventional deposition equipment is about 6%.
On the other hand, it has been clarified by experiments of the present inventors that the deposition rate can be reduced to about 30% in the present embodiment.

The pressure in the transfer pipe 60 is controlled by the organic metal 1
As 00 is heated under a constant volume condition, the pressure becomes higher than the pressure in the film forming chamber 20. As a result, the organic metal 100 discharged from the discharge port 62a rapidly expands under reduced pressure to be in a supercooled state and to be clustered. When the clustered deposition material 100 adheres to the deposition target plate 200, migration and aggregation of the deposition material 100 occur, so that the adhesion of the deposition material 100 to the deposition target plate 200 can be improved.

(Second Embodiment) FIG. 2 is a perspective view showing a main part of a transfer tube 60, a crucible 40 and the like in the vapor deposition apparatus of the present embodiment, and shows a downstream side of a discharge part 62 in a transfer direction of the organic metal 100. A downstream sheath heater (heating means) 71 is wound around the side portion (the left side portion in FIG. 2). An upstream sheath heater (heating means) 72 is wound around the upstream portion (the right portion in FIG. 2), and the voltages applied to the downstream and upstream sheath heaters 71 and 72 are individually adjusted. Is available.

A downstream film thickness monitor 81 for measuring the film thickness of the organic metal 100 in a portion of the glass substrate 200 corresponding to the downstream sheath heater 71, and an organic metal 100 in a portion corresponding to the upstream sheath heater 72. And an upstream-side film thickness monitor 82 for measuring the film thickness. Further, a thermocouple (not shown) that measures each temperature of the downstream and upstream sheathed heaters 71 and 72 is provided.

The voltage applied to each of the sheathed heaters 71 and 72 is adjusted so that the temperature measured by the thermocouple is changed according to the film thickness measured by the film thickness monitor 81. For example, when the film thickness on the downstream side is reduced, the voltage applied to the downstream sheathed heater 71 is increased, and the organic metal 1 on the downstream side is increased.
If the temperature of 00 is increased, the pressure drop in the downstream part in the discharge part 62 can be suppressed, and the discharge amount of the discharge port 62a in the downstream part is suppressed from being smaller than the discharge amount of the discharge port 62a in the upstream part. it can.

(Third Embodiment) In the first embodiment, the opening areas of the plurality of discharge ports 62a are all the same, but in the present embodiment, as shown in FIG.
The discharge port 62a located on the downstream side (the left side in FIG. 3) in the transfer direction 0 is changed to the discharge port 62 located on the upstream side (the right side in FIG. 3).
The opening area is larger than a. This allows
The discharge amount of the discharge port 62a in the downstream portion is equal to the discharge port 6 in the upstream portion.
It can be suppressed that it becomes smaller than the release amount of 2a.

(Fourth Embodiment) In the first embodiment, the intervals P1 between the plurality of discharge ports 62a are all the same, but in the present embodiment, as shown in FIG.
0, the distance P between the discharge ports 62a located downstream in the transfer direction.
2 is smaller than the interval P3 of the discharge port 62a located on the upstream side. Accordingly, it is possible to suppress the amount of release from the downstream portion of the release section 62 from being smaller than the amount of release from the upstream portion.

(Fifth Embodiment) As shown in FIG. 5, in the present embodiment, the discharge port 62a located at the most downstream position (leftmost position in FIG. 5) of the discharge port 62a in the transport direction of the organic metal 100. The distance L3 between the tip 62a and the tip of the discharge portion 62 is formed to be longer than the distance P4 between the most downstream position discharge port 62a and the discharge port 62a located next to the most downstream position discharge port 62a (right side in FIG. 5). Have been.

As a result, a space 62b having a predetermined length L3 is formed between the discharge port 62a at the most downstream position in the discharge section 62 and the tip of the discharge section 62. Therefore, the pulsation of the pressure of the organic metal 100 transferred from the upstream side to the most downstream position discharge port 62a can be absorbed by the organic metal 100 in the space 62b, and the space 62b functions as a so-called surge tank. It is possible to prevent the discharge pressure of the discharge port 62a at the most downstream position from temporarily decreasing.

(Sixth Embodiment) The transfer pipe 6 of the first embodiment
In the present embodiment, a single transfer unit 61 is connected to a single discharge unit 62, but in the present embodiment, as shown in FIG. 62 is evaporation surface 2
It is arranged in parallel on a plane parallel to 00a, and is configured in a comb-tooth shape. Thereby, the extending direction of the discharge portion 62 (FIG. 6)
The discharge ports 62a can be arranged side by side in two directions, that is, the left and right directions) and the parallel direction of the discharge portions 62, so that the organic metal 100 can be discharged two-dimensionally to the vapor deposition surface 200a.
The uniformity of vapor deposition on 00a can be improved.

(Seventh Embodiment) As shown in FIG. 7, in this embodiment, one crucible 30 is disposed on each of the left and right sides of a glass substrate 200, and the crucible 30 is
The comb-shaped transfer tube 60 of the embodiment is connected. And the emission parts 62 from both the left and right sides are arranged alternately, and the organic metal 100 in the adjacent emission parts 62 is
They are transported in opposite directions. Thereby, even when the emission amount of the emission port 62a in the downstream portion is smaller than the emission amount of the emission port 62a in the upstream portion, uniformity of evaporation on the evaporation surface 200a can be easily secured.

Also, since two crucibles 30 are provided, the organic metal 100 is supplied to one crucible 30 and the other crucible 30 is supplied.
If an additive to be mixed into the organic metal is supplied, the additive can be added simultaneously with the step of depositing the organic metal 100, which is preferable.

(Other Embodiments) In the first embodiment, the holding member 50 is provided above the discharge portion 62, and the discharge port 62a is formed to open upward. , The discharge port 62a may be formed to open downward. Thereby, when the mask member is installed on the deposition surface 200a,
Since the mask member is installed above the vapor deposition surface 200a, it is not necessary to consider that the mask member is peeled off from the glass substrate 200 by gravity.
The installation of the mask member on the glass substrate 200 can be facilitated.

In addition, if at least one of the discharge unit 62 and the holding member 50 of the first embodiment is swung in the same direction as the parallel direction of the plurality of discharge units 62 of the sixth embodiment, The organic metal 100 can be released two-dimensionally as in the sixth embodiment, which is preferable.

Further, in the first embodiment, the crucible 30 is disposed in the film forming chamber 20, but may be disposed outside the film forming chamber 20. Accordingly, the organic metal 100 can be supplied to the crucible 30 without dividing and disassembling the film forming chamber 20, so that the productivity by the vapor deposition apparatus can be improved and the film forming chamber 20 can be further improved. The size can be reduced.

In the first embodiment, the vapor deposition apparatus of the present invention is applied to a resistance heating vapor deposition method using a sheathed heater as a heating means, but the electron beam vapor deposition method, the high frequency vapor deposition method, the laser vapor deposition method and the like are used. The present invention can also be applied to vapor deposition, and the present invention is not limited to application to organic metal vapor deposition, and is used for forming thin films such as various metal films, semiconductor films, insulator films, and highly conductive films. Of course, it can be applied to

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a vapor deposition apparatus according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a main part of a vapor deposition apparatus according to a second embodiment of the present invention.

FIG. 3 is a top view illustrating a main part of a vapor deposition apparatus according to a third embodiment of the present invention.

FIG. 4 is a perspective view showing a main part of a vapor deposition apparatus according to a fourth embodiment of the present invention.

FIG. 5 is a perspective view showing a main part of a vapor deposition apparatus according to a fifth embodiment of the present invention.

FIG. 6 is a perspective view showing a main part of a vapor deposition apparatus according to a sixth embodiment of the present invention.

FIG. 7 is a perspective view showing a main part of a vapor deposition apparatus according to a seventh embodiment of the present invention.

FIG. 8 is an overall configuration diagram showing a conventional vapor deposition apparatus.

[Explanation of symbols]

Reference Signs List 20: film forming chamber, 30a: evaporation chamber, 50: holding member, 60: transfer pipe, 62: discharge section, 62a: discharge port, 7
0: sheath heater, 100: organic metal, 200: glass plate, 200a: vapor deposition surface, L1: distance between glass plate and discharge port, L2: length of one side of glass substrate.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Harumi Suzuki 1-1-1 Showa-cho, Kariya-shi, Aichi F-term in DENSO Corporation (Reference) 4K029 AA09 BA62 BD00 CA01 DB06

Claims (10)

[Claims] An evaporation material (100) is deposited in a chamber (20) having a reduced pressure by a physical vapor deposition method in a chamber (20).
00) an evaporation chamber (30a) for heating and evaporating the evaporation material (100); and an evaporation chamber (30a) communicating with the evaporation chamber (30a).
And a transfer pipe (60) for transferring the deposition material (100) from the vicinity of the deposition surface (200a) of the deposition target plate (200), and the transfer pipe (60) relative to the deposition surface (200a). The vapor deposition surface (2)
A plurality of discharge ports (62a) for discharging the deposition material (100) toward 00a) are formed. 2. The vapor deposition apparatus according to claim 1, further comprising heating means (70) for heating the transfer pipe (60). 3. A holding member (50) for holding the deposition target plate (200) in the chamber (20), wherein at least one of the holding member (50) and the discharge section (62) is provided with the holding member (50). The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is movable parallel to the vapor deposition surface. 4. The discharge section (6) of the transfer pipe (60).
4. A method according to claim 1, wherein said step (2) is formed so as to extend substantially parallel to said vapor deposition surface (200a).
The vapor deposition apparatus according to any one of the above. 5. A downstream heating means (71) for heating a downstream portion of the discharge section (62) in the direction of transport of the deposition material (100) and an upstream heating means (72) for heating an upstream portion. 5. The vapor deposition apparatus according to claim 4, wherein a degree of heating by the downstream and upstream heating means (71, 72) is individually adjustable. 6. 6. The outlet (62a) located on the downstream side in the transport direction of the deposition material (100) among the plurality of outlets (62a), the outlet (62a) located on the upstream side.
The vapor deposition apparatus according to claim 4, wherein the vapor deposition apparatus has a larger opening area. 7. An interval (P2) between the discharge ports (62a) located on the downstream side in the transport direction of the deposition material (100).
The vapor deposition apparatus according to any one of claims 4 to 6, wherein the distance (P3) between the discharge ports (62a) located on the upstream side is smaller than the distance (P3). 8. A distance (L3) between the most downstream discharge port (62a) of the discharge ports (62a) located at the most downstream in the transport direction of the deposition material (100) and the tip of the discharge section (62). ) Is a discharge port (6a) located adjacent to the most downstream position discharge port (62a) and the most downstream position discharge port (62a).
The vapor deposition apparatus according to any one of claims 4 to 7, wherein the distance is longer than a distance (P4) with respect to 2a). 9. The vapor deposition according to claim 4, wherein a plurality of the emission portions are arranged in parallel on a plane parallel to the vapor deposition surface. apparatus. 10. The deposition apparatus according to claim 9, wherein the deposition materials (100) in the adjacent emission portions (62) are transported in directions facing each other.