JP2000188259A - Gas supply device and connector structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas supply device through which a uniform film can be formed, and also to provide a connector structure which can simplify its regular maintenance and cleaning operation. SOLUTION: This gas supply device for supplying gas to a plasma electrode within the plasma chamber of the device for plasma treatment in vacuum, includes a gas supply pipe 15, an upper gas header 16 connected to the gas supply pipe 15, a lower gas header 17 connected to the supply pipe 15, a gas injection pipe located being connected with the gas supply pipe 15 within the upper and lower gas headers 16 and 17 and having a small hole of 0.3 to 0.5 mm diameter, and a plurality of gas pipes 20 provided being connected to the upper and lower headers 16 and 17, in parallel between the upper and lower headers 16 and 17 and having a plurality of gas blow-out holes of 0.3 to 0.5 mm diameter on its side of a plasma electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a gas supply for uniformly supplying gas to a plasma electrode in a plasma processing chamber of an apparatus for performing plasma processing in a vacuum, such as a plasma CVD apparatus, a sputtering apparatus, and a dry etching apparatus. The present invention relates to a device and a connector structure used in connection with the device.

[0002]

2. Description of the Related Art In a plasma CVD apparatus or the like, a reaction gas is supplied to a plasma electrode in a plasma processing chamber, and the reaction gas is decomposed and reacted in a plasma atmosphere to form a uniform thin film on a substrate.

FIGS. 1A to 1C show a showerhead type gas supply device used in a conventional plasma processing chamber, FIG. 1A is a perspective view of the same, and FIG. 1
1A is a front view, and FIG. 1C is a side view of FIG.

[0004] Reference numeral 1 in the figure denotes a box-shaped gas header. A gas supply pipe 2 is connected to the gas header 1. On the surface 1a of the gas header 1 on the substrate arrangement side, a large number of gas blowing holes 3 are formed uniformly in a lattice. Inside the gas header 1, a plurality of baffles 4 having small holes 4 a are installed in parallel with the surface 1 of the gas header 1.

In the gas supply device having such a configuration, gas to the plasma processing chamber is supplied from the gas supply pipe 2 to the gas header 1. In the gas header 1, the baffle 4
Due to the pressure loss of the gas flow energy passing through the small holes 4a, the entire gas in the header becomes uniform, and the gas is uniformly distributed from the many gas blowing holes 3 provided uniformly on the surface 1a of the gas header 1. It is blown out and supplied to the plasma electrode.

In a conventional plasma CVD apparatus, the showerhead-type gas supply apparatus often serves as a plasma electrode and supplies high-frequency power to the surface of the main surface 1a to generate plasma.

[0007]

However, the conventional showerhead type gas supply apparatus has the following problems. (1) Because it is a large heavy object made entirely of sturdy boxes,
Removal and installation work cannot be easily performed during maintenance of the plasma processing chamber. (2) The gas blowout holes 3 in the main surface 1a of the gas header 1 and the plurality of baffles 4 in the header do not allow the expected and uniform gas distribution and blowout. Therefore, the distribution of the source gas supply occurs, and the distribution of the film thickness on the substrate is deteriorated.

(3) The gas blowing holes 3 in the main surface 1a of the gas header 1 are usually very small holes having a diameter of about 0.3 to 1.0 mm. However, the thickness of the main surface 1a of the gas header 1 is also increased to 5 mm or more to support the structure.
An enormous cost is required for processing the gas outlet 3.

(4) When the showerhead type gas supply device also serves as a plasma electrode, the gas supply location and the plasma generation location are the same. Therefore, although the apparatus can be made compact, it is difficult to balance the gas amount and the plasma energy for decomposing the gas amount, and the control range is narrow and limited.

[0010] The present invention has been made in view of such circumstances, and Φ in the upper gas header and the lower gas header.
A gas injection pipe provided with small holes of 0.3 to 0.5 mm was arranged, and a plurality of gas outlets of φ 0.3 to 0.5 mm were provided on the plasma electrode side between the upper gas header and the lower gas header. To provide a gas supply device capable of increasing pressure loss due to gas passage and achieving uniform gas blowing by adopting a configuration in which a plurality of gas pipes are arranged in parallel to form a uniform film on a substrate. With the goal.

Further, the present invention provides a gas injection pipe having a small hole having a diameter of 0.3 to 0.5 mm provided in an upper gas header and a lower gas header, and a plasma electrode is provided on the upper gas header and the lower gas header. Φ0.3 on main side
By adopting a configuration in which a box-shaped body provided with a plurality of gas blowing holes of up to 0.5 mm is provided, a pressure loss due to gas passage is increased to achieve uniform gas blowing, and a uniform It is an object of the present invention to provide a gas supply device capable of forming a thin film.

Further, the present invention provides a cap nut connected to a gas supply pipe, a connection fitting removably screwed to the cap nut, one end connected to the connection fitting via packing, and the other end. It is an object of the present invention to provide a connector structure capable of easily performing regular maintenance and cleaning processing by having a configuration having a plug with a hole connected to the gas injection pipe.

[0013]

Means for Solving the Problems A first invention of the present application is a gas supply apparatus for supplying gas to a plasma electrode in a plasma chamber of an apparatus for performing plasma processing in a vacuum. An upper gas header connected to the pipe, a lower gas header connected to the gas supply pipe,
Each of the upper gas header and the lower gas header is connected to the gas supply pipe, and has a diameter of 0.3 to 0.5 mm.
A gas injection pipe having a small hole, and an upper gas header and a lower gas header, which are connected in parallel to the upper and lower gas headers, respectively, and are arranged in parallel.
And a plurality of gas pipes provided with a plurality of gas outlets of about 0.5 mm.

In the first aspect of the present invention, one gas tube is provided on the substrate side.
It is preferable to provide a net having a mesh of 0 to 50 or a flat plate having a plurality of small holes having a diameter of 0.3 to 1.0 mm.

According to a second aspect of the present invention, there is provided a gas supply apparatus for supplying a gas to a plasma electrode in a plasma chamber of an apparatus for performing a plasma process in a vacuum, comprising a gas supply pipe and an upper gas connected to the gas supply pipe. A header, a lower gas header connected to the gas supply pipe, and a small hole having a diameter of 0.3 to 0.5 mm provided in the upper gas header and the lower gas header so as to be connected to the gas supply pipe, respectively. A gas injection pipe, which is disposed so as to be connected to the upper gas header and the lower gas header, has a diameter of φ
A box-like body provided with a plurality of gas outlets of 0.3 to 0.5 mm.

According to a third aspect of the present invention, there is provided a connector structure used for connecting a gas supply pipe of the gas supply device to upper and lower gas headers, wherein a cap nut connected to the gas supply pipe is provided. A connection fitting detachably screwed to the cap nut, and a plug with a hole connected at one end to the connection fitting via packing and the other end connected to the gas injection pipe. Connector structure.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings. (Embodiment 1) Referring to FIG. 2 and FIGS. Here, FIG. 2 is a developed view showing a positional relationship among the gas supply device, the plasma electrode, and the processing substrate according to the first embodiment. FIG. 3A is a perspective view of the gas supply device, and FIG.
3B is a front view of FIG. 3A, and FIG. 3C is FIG.
FIG. In FIG. 3B, for convenience, the small holes 2
The small holes 22 and 24 are directed upward, and the small holes 24 are directed downward so that the gas holes 20 and 24 are directed to the front side. )
And FIG. 5B).

As shown in FIG. 2, a substrate 12 is placed on the substrate heater 11. The substrate heater 11
A ladder-shaped plasma electrode 13 is arranged near the substrate 12 in opposition to the substrate 12. A gas supply device 14 for sending gas to the substrate 12 is arranged near the plasma electrode 13.

As shown in FIGS. 2 and 3, the gas supply device 14 includes a gas supply pipe 15, an upper gas header 16 connected to the gas supply pipe 15, and a gas supply pipe 15.
A lower gas header 17 connected to the lower gas header 17, an upper gas injection pipe 18 disposed in the upper gas header 16, and a lower gas injection pipe 19 disposed in the lower gas header 17.
And the upper gas header 16 and the lower gas header 17
It is composed of a number of gas pipes 20 arranged and connected between the upper gas header 16 and the lower gas header 17, respectively.

The upper gas injection pipe 18 is connected to the gas supply pipe 15 via a connector 21. The upper gas injection pipe 18 is provided with a number of small holes (diameter 0.3 to 0.5 mm) 22 for blowing out gas at equal intervals.
The small hole 22 is formed in the upper gas injection pipe 18 at a position where the gas is blown out in a direction opposite to the gas pipe 20 so that the gas from the small hole 22 does not directly hit the gas pipe 20.

The lower gas injection pipe 19 is connected to the gas supply pipe 15 via a connector 23. The lower gas injection pipe 19 is provided with a number of small holes (diameter 0.3 to 0.5 mm) 24 for blowing gas at equal intervals.
The small hole 24 is formed in the lower injection pipe 19 at a position where the gas is blown in a direction opposite to the gas pipe 20 so that the gas from the small hole 24 does not directly hit the gas pipe 20.

A plurality of gas outlets (diameter 0.3 to 0.5 mm) 25 are formed at equal intervals on the substrate side of each gas pipe 20. The reason why a large number of gas pipes 20 are arranged is to enable a gas to be uniformly supplied to the entire plasma electrode 13.

Since the atmosphere in which the gas supply device is used is under vacuum, the gas outlets 25,
It is difficult to uniformly blow out gas from the small holes 22 of the upper injection pipe 18 and the small holes 24 of the lower gas injection pipe 19. For this reason,
The small holes 22, 24, and 25 need to have a pressure loss due to gas passage as large as possible so that gas is jetted out evenly.
Further, since the small holes 22, 24, and 25 are opened by machining, the minimum size is substantially about 0.3 to 0.5 mm.

In the first embodiment, since the gas pipe 20 having a diameter of about 6 to 10 mm is used, the thickness of the gas pipe 20 is as thin as about 1 to 1.5 mm, and thus the diameter of the gas pipe 20 is about 0.3 to 0.5 mm.
The machining of the small holes 22, 24, 25 can be easily carried out. Further, in order to increase the pressure loss due to gas passage and to realize uniform gas blowing, the flow velocity at the time of gas blowing from the small holes 22, 24, 25 reaches the sonic speed and the small holes 22, 24 are obtained so as to obtain a choke phenomenon. , 25, it is possible to achieve fairly uniform gas blowing.

The operation of the gas supply device having the above configuration is as follows. First, the gas supplied to the plasma processing chamber is distributed to the upper gas header 16 and the lower gas header 17. Within each of the gas headers 16 and 17, there are an upper gas injection pipe 18 and a lower gas injection pipe 19, respectively. The gas pipes 20 are formed through small holes 22 and 24 uniformly formed in the upper gas injection pipe 18 and the lower gas injection pipe 19. The gas is blown out in a direction opposite to the upper gas injection pipe 18 and the lower gas injection pipe 19 so as not to directly hit the gas. Then, each gas header 16, 17
Inside, the gas is further uniformly distributed to the gas pipe 20, and a uniform amount of gas is blown out from the gas blowing hole 25 opened in the gas pipe 20. This gas receives plasma (electron) energy near the plasma electrode 13 and decomposes and reacts, reaches the substrate surface and contributes to film formation.

The gas blow-out from the gas outlets 25 provided uniformly in the gas pipe 20 is sonic at the outlet of the outlet, but is about 50 times the diameter of the outlet (× 50 = 15 mm for φ0.3 mm). As it progresses, it grows into a uniform flow, and the gas is supplied to the plasma electrode 13 as a uniform gas flow, so that a uniform film can be formed on the substrate 13.

The gas supply device according to the first embodiment is shown in FIG.
As shown in FIG.
An upper gas header 16 having a built-in upper gas injection pipe 18 connected thereto, a lower gas header 17 having a built-in lower gas injection pipe 19 connected to the gas supply pipe 15, the upper gas header 16 and the lower gas header A plurality of gas pipes 20 each having a plurality of gas outlet holes 25 having a diameter of 0.3 to 0.5 mm disposed on the side of the plasma electrode 13 and connected to the upper and lower gas headers 16 and 17 respectively. It has a configuration. Therefore, it has the advantages described below.

(1) The required minimum upper gas header 16 and lower gas header 17 are provided at the upper and lower portions, respectively.
Further, since the gas blowing portion is formed using a thin gas pipe, the total weight can be reduced to a half or less of the conventional weight.

(2) An upper gas injection pipe 18 having a small hole provided in the upper gas header 16, a lower gas injection pipe 19 having a small hole provided in the lower gas header 17, and a gas pipe 20 having a gas outlet hole. The uniform gas blowing structure (uniform flow control using the choke phenomenon) can achieve a uniform gas blowing and obtain a good film thickness distribution on the substrate surface.

(3) Upper gas injection pipe 18 with small holes, lower gas injection pipe 19 with small holes, and gas pipe 20 with gas blowing holes
Uses a gas pipe with a diameter of about 6 to 10 mm, so the thickness of the gas pipe 20 is also as thin as about 1 to 1.5 mm, so that small holes with a diameter of about 0.3 to 0.5 can be easily machined. it can.

(4) Plasma electrode 13 and gas supply device 14
Has a different structure, the plasma electrode 13 can be selected in consideration of the influence of plasma on the substrate surface. Next, the installation distance between the plasma electrode 13 and the gas supply device 14 is set to be suitable for the film forming conditions. , A good film thickness distribution can be obtained.

The gas supply device according to the first embodiment can be installed in any of vertical, horizontal, and oblique directions according to the position of the substrate on which a film is to be formed. The gas pipe type gas supply device thus configured is simple and lightweight, and exhibits characteristics superior to those of the conventional shower head type gas supply device in terms of weight and gas supply uniformity, particularly for a device corresponding to a large substrate. .

(Embodiment 2) Referring to FIGS. 4 (A) to 4 (C). Here, FIG. 4 (A) is a perspective view of an improved gas pipe type gas supply device according to Embodiment 2 of the present invention, FIG. 4 (B) is a front view of FIG. 4 (A), and FIG. FIG. 4 (A) shows a side view.

In FIG. 4, for example, in a plasma CVD apparatus, a gas supply apparatus using a gas pipe (FIG. 3) has a positional relationship with a plasma electrode as shown in FIG. At this time,
The distance between the plasma electrode 13 and the substrate 12 is about 20 mm to 45 mm, and the distance between the plasma electrode 13 and the gas pipe 20 is about 20 mm to 90 mm according to the substrate processing mode.

At this time, when viewed from the plasma electrode 13, the potential of the atmosphere differs between the portion where the gas tube 20 is present and the portion where the gas tube 20 is not present. This may hinder uniform generation of plasma in the plasma electrode 13 and may adversely affect the film thickness distribution during film formation.

In order to solve the problem in such a case,
This is the second embodiment. In the second embodiment, a mesh net 30 is provided on the plasma tube 13 side of the gas pipe 20. The mesh net 30 is connected to the gas outlet 2 of the gas pipe 20.
It is necessary that the opening has a sufficient opening so as not to hinder the gas blown out from the nozzle 5 and that the electron generated by the plasma cannot pass freely. Actually, a mesh made of a non-magnetic material of 10 mesh to 50 mesh is used, but a punching metal having a large number of small holes of Φ1 mm or less may be used instead.

The net 30 is desirably uniform in potential as a whole, and a substantially uniform potential can be secured by simply bringing the upper gas header 16 and the lower gas header 17 into close contact with each other. . With this structure, the potential of the atmosphere of the gas tube 20 as viewed from the plasma electrode 13 is substantially uniform even when the position of the gas tube 20 is close to the plasma electrode 13, which contributes to uniform generation of plasma and uniform film formation on the substrate. I do.

According to the gas supply device of the second embodiment, the mesh tube 30 is provided on the side of the gas tube 20 on the side of the plasma electrode 13. In addition, the following effects are obtained.

The mesh 30 is provided with the gas outlet 2 of the gas pipe 20.
5 has an appropriate opening through which electrons generated by the plasma cannot pass through freely without obstructing the gas blown out from the nozzle. Further, the mesh 30 secures a substantially uniform potential by being in close contact with the upper gas header 16 and the lower gas header 17.

With this structure, the potential of the atmosphere of the gas tube 20 as viewed from the plasma electrode 13 becomes substantially uniform even when the position of the gas tube 20 is set close to the plasma electrode 13. Generates and contributes to uniform film formation on the substrate.

(Embodiment 3) Referring to FIGS. 5 (A) to 5 (C). Here, FIG. 5 (A) is a perspective view of an improved gas pipe type gas supply device according to Embodiment 2 of the present invention, FIG. 5 (B) is a front view of FIG. 5 (A), and FIG. FIG. 5 (A) shows a side view. FIG. 5 shows an improved flat plate type gas supply apparatus for further stabilizing the plasma when the plasma electrode generates plasma on the processing substrate in the gas pipe type gas supply apparatus of FIG. In the second embodiment, the invention which does not hinder the uniform generation of plasma is described, particularly when the gas tube 20 is located near the plasma electrode 13, but a more effective proposal is shown in FIG. It is. In the second embodiment, when the mesh net 31 is deformed due to temperature distribution or the like, the original purpose may not be sufficiently achieved.

The third embodiment is proposed in consideration of these points. In the third embodiment, the gas pipe 20 shown in FIG.
Is replaced by a box-shaped body 32 connected to the upper gas header 16 and the lower gas header 17. The principle of uniform blowing of gas is the same as the principle of uniform blowing in FIG. 3 shown in the first embodiment. Here, the gap between the flat plate (main surface) 31a and the back plate 31b constituting the box-shaped body 31 is set to about 5 to 15 mm, and the flat plate 31a is formed in a box shape in which many gas blowing holes 33 are uniformly provided. , Gas pipe 2
A function similar to 0 can be performed.

That is, the gas supplied to the plasma processing chamber is distributed to the upper gas header 16 and the lower gas header 17. Upper gas header 16, Lower gas header 1
7, there are an upper gas injection pipe 18 and a lower gas injection pipe 19, respectively, and small holes 22, 2 uniformly formed in the injection pipe.
4 uniformly blows into the header. Here, in order to increase the pressure loss due to gas passage and realize uniform gas blowing, the flow velocity at the time of gas blowing from a small hole of about φ0.3 mm to φ0.5 mm reaches a sonic speed to obtain a choke phenomenon. By selecting the number of small holes, it is possible to achieve fairly uniform gas blowing.

The upper and lower gas headers 16 and 17 include:
The flat plate 31a and the back plate 31b are provided with a box-shaped space, and are designed so that gas can be uniformly supplied to the entire plasma electrode 13. That is, the upper gas injection pipe 1
8. Small holes 2 uniformly formed in the lower gas injection pipe 19
Based on the same idea as in the case of 2,24, φ0.3mm ~ φ
A number of gas blowing holes 33 of about 0.5 mm are uniformly formed in the flat plate 31a, and the number of small holes is selected so that the flow velocity at the time of gas blowing from the gas blowing holes 33 reaches a sonic speed and obtains a choke phenomenon. Thus, it is possible to achieve very uniform gas blowing over the entire surface of the flat plate 31a.

The gas blowout from the gas blowout holes 33 provided uniformly on the flat plate 31a of the box-shaped body 31 is as follows:
At the stoma exit, the speed of sound is about 50 times the stoma diameter (φ
When it advances by 0.350 m x 50 = 15 mm), it grows into a uniform flow, the gas is supplied to the plasma electrode 13 as a uniform gas flow, and a proper film formation can be obtained on the substrate.

The back plate 31b has a required length to support the structural strength of the box-shaped body 31, but the flat plate
Since 1a can be formed of a thin plate having a thickness of 1 to 3 mm, machining of a gas blowing hole having a diameter of about 0.3 to 0.5 mm can be easily performed. Further, since the position of the flat plate 31a is set at a uniform distance from the plasma electrode 13, especially the flat plate 31a
Even in a situation where 1a is installed near the plasma electrode 13, the potential of the atmosphere of the flat plate 31a viewed from the plasma electrode 13 becomes substantially uniform, which contributes to uniform generation of plasma and uniform film formation on the substrate.

The improved flat plate type gas supply apparatus thus configured is simple and lightweight, and is superior to a conventional shower head type gas supply apparatus in weight and gas supply uniformity, particularly for a device corresponding to a large substrate. Demonstrate the characteristics.

(Embodiment 4) Referring to FIGS. 6 (A) and 6 (B). Here, FIG. 6A is an assembly view of the connector structure according to the fourth embodiment of the present invention, and FIG. 6B is an exploded view of the connector structure of FIG. 6A. That is, the connector structure of the fourth embodiment shows a special connector structure for inserting, filling, and sealing an injection pipe into an upper gas header (or a lower gas header) in a gas supply device using a gas pipe. .

FIG. 6 shows a special connector for inserting and sealing an upper gas injection pipe 18 into an upper gas header 16 in a gas supply apparatus using a gas pipe (FIG. 3) in, for example, a plasma CVD apparatus. The structure is shown. This is because the lower gas header 17 is
The same applies to the case of inserting and sealing, and fixing is performed. Here, the upper gas header will be described.

The upper gas injection pipe 1 is connected to the upper gas header 16.
8 is that periodic maintenance of the entire gas supply device causes foreign substances such as films and powders to adhere during plasma processing.
Must be removed and cleaned regularly. At this time, since the components are to be disassembled and cleaned, it is necessary to extract the upper gas injection pipe 18 from the upper gas header 16, so a special connector structure as shown in FIG. 6 has been proposed.

In FIG. 6, reference numeral 41 denotes a plug with a hole attached to the upper gas header 16. A connection fitting 43 is attached to the holed plug 41 via a packing 42. The plug with hole 41, the packing 42, and the connection fitting 43 are always attached to the upper gas header 16, and are replaced when the sealing performance is reduced by repeated use.

The upper gas injection pipe 18 is connected to the connection fitting 4.
3 and a female connector 44 is attached to the protruding portion. The female connector 44 has a sealing surface 44 a inclined by 45 °, for example.
Fixation is possible.

The upper gas injection pipe 18 and the gas supply pipe 15 are connected by a male connector 46. The male connector 46 has, for example, a sealing surface 46 inclined by 45 °.
a, and by tightening the cap nut 45, the connection fitting 4
3 can be sealed / fixed.

As shown in FIG. 3, the upper gas injection pipe 18 has a small hole 22 (about 0.3 to 0.5 mm) arranged in the upper gas header 16 and uniformly formed in the injection pipe. From the gas pipe 20 so that it does not directly hit the gas pipe 20.
It must be installed so that gas is blown out in the opposite direction. For this reason, a positioning pin 47 is provided on the female connector 44 attached to the upper gas injection pipe 18 so that the male connector 4
6 so that an appropriate small hole position can be easily and reliably secured.

As described above, the connector structure of the fourth embodiment has the following effects. (1) For periodic maintenance / cleaning of the gas supply device, it is necessary to pull out the upper gas injection pipe 18 from the upper gas header 16 and remove it. However, it is easy to remove it by loosening and removing the cap nut 45. Becomes possible. This simplifies the cleaning process.

(2) When assembling again, the cap nut 4
By simply tightening the connector 5 into the connection fitting 43, gas sealing can be surely performed using the sealing surface 46 a of the male connector 46 and the sealing surface 44 a of the female connector 44. Further, the orientation of the upper gas injection pipe 18 can be easily fixed at an appropriate position by the positioning pin 47.

(3) The plug 41 with holes, the packing 42, and the connection fitting 43 are always attached to the upper gas header 16, but if the sealing / fixing portion deteriorates the sealing performance due to repeated use, the replacement is required. Possible and highly maintainable.

[0058]

As described above in detail, according to the present invention, the upper gas header and the lower gas header have a diameter of 0.3 to 0.5 mm.
In addition to arranging a gas injection pipe provided with a small hole of mm, a plurality of gas pipes having a plurality of gas outlets of φ 0.3 to 0.5 mm on the plasma electrode side between the upper gas header and the lower gas header are arranged in parallel. With such a configuration, it is possible to provide a gas supply device capable of increasing pressure loss due to gas passage, realizing uniform gas blowing, and forming a uniform film on a substrate.

If a flat plate having a plurality of small holes of 10 to 50 mesh or 0.3 to 1.0 mm is provided on the substrate side of the gas tube, the gas tube position is set close to the plasma electrode. Even in this situation, the potential of the atmosphere in the gas tube viewed from the plasma electrode becomes substantially uniform, which can contribute to the uniform generation of plasma at the plasma electrode and the uniform deposition of the substrate.

Further, according to the present invention, a gas injection pipe having a small hole having a diameter of 0.3 to 0.5 mm is arranged in the upper gas header and the lower gas header. By adopting a configuration in which a box-shaped body provided with a plurality of gas blowing holes having a diameter of 0.3 to 0.5 mm is arranged on the main surface on the plasma electrode side, pressure loss due to gas passage is increased and uniform It is possible to provide a gas supply device capable of realizing gas blowing and forming a uniform film on a substrate.

Further, according to the present invention, a cap nut connected to the gas supply pipe, a connection fitting detachably screwed to the cap nut, and one end connected to the connection fitting via packing, By providing a configuration having a plug with a hole connected to the gas injection tube at the other end, a connector structure that can easily perform regular maintenance and cleaning processing can be provided.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a conventional shower head type gas supply device.

FIG. 2 shows a positional relationship among a gas supply device, a plasma electrode, and a processing substrate according to the present invention.

FIG. 3 is an explanatory diagram of the gas supply device according to the first embodiment of the present invention.

FIG. 4 is an explanatory diagram of a gas supply device according to a second embodiment of the present invention.

FIG. 5 is an explanatory diagram of a gas supply device according to a third embodiment of the present invention.

FIG. 6 is an explanatory view of a connector structure according to Examples 1 to 3 of the present invention.

[Explanation of symbols]

 11: Substrate heater, 12: Substrate, 13: Plasma electrode, 14: Gas supply device, 15: Gas supply tube, 16: Upper gas header, 17: Lower gas header, 18: Upper gas injection tube, 19: Lower gas Injection pipe, 20 ... gas pipe, 21, 23 ... connector, 22, 24 ... small hole 25, 33 ... gas blowout hole, 30 ... mesh net, 31 ... box-shaped body, 31a ... flat plate, 31b ... back plate, 41: Plug with hole, 42: Packing, 43: Connection fitting, 44: Female connector, 45: Cap nut, 46: Male connector.

Continued on the front page (72) Inventor Takanori Kondo 1-1-1, Akunoura-cho, Nagasaki-shi, Nagasaki Mitsubishi Heavy Industries, Ltd. Nagasaki Shipyard (72) Inventor Yoichiro Nakajima 1-1-1, Akunoura-cho, Nagasaki-shi, Nagasaki Mitsubishi Heavy Industries 4K030 EA01 EA05 EA06 FA01 KA15 KA17 KA23 KA30 5F004 AA01 BB28 BB32 BC03 5F045 AA08 AA19 BB02 EC07 EF03 EF13 EF14

Claims (4)

[Claims] 1. A gas supply device for supplying a gas to a plasma electrode in a plasma chamber of an apparatus for performing plasma processing in a vacuum, comprising: a gas supply pipe; an upper gas header connected to the gas supply pipe; A lower gas header connected to a supply pipe, and a lower gas header connected to the gas supply pipe in the upper gas header and the lower gas header, respectively;
A gas injection pipe having a small hole of mm is disposed between the upper gas header and the lower gas header and connected in parallel to the upper and lower gas headers, respectively.
A gas supply device comprising: a plurality of gas pipes provided with a plurality of gas outlets of 0.3 to 0.5 mm. 2. The gas according to claim 1, wherein a plate having a mesh of 10 to 50 mesh or a plurality of small holes having a diameter of 0.3 to 1.0 mm is provided on the substrate side of the gas pipe. Feeding device. 3. A gas supply device for supplying a gas to a plasma electrode in a plasma chamber of a device for performing plasma processing in a vacuum, comprising: a gas supply pipe; an upper gas header connected to the gas supply pipe; A lower gas header connected to a supply pipe, and a lower gas header connected to the gas supply pipe in the upper gas header and the lower gas header, respectively;
a gas injection pipe provided with a small hole having a diameter of 0.3 mm, and a plurality of gas blowing holes having a diameter of 0.3 to 0.5 mm provided on the main surface on the side of the plasma electrode, which are disposed so as to be connected to the upper gas header and the lower gas header. And a box-shaped body. 4. A cap structure used for connecting a gas supply pipe to an upper and lower gas header of the gas supply apparatus according to claim 1 or 3, wherein a cap nut connected to the gas supply pipe. A connection fitting detachably screwed to the cap nut, and a plug with a hole connected at one end to the connection fitting via packing and the other end connected to the gas injection pipe. A connector structure characterized by the above-mentioned.