The specific embodiment
To combine accompanying drawing and embodiment that the plasma cleans device and the plasma cleans method of present technique scheme are done further explain below.
See also Fig. 1, present technique scheme implementation example provides a kind of plasma cleans device 100, is used to remove the pollutant of workpiece (for example circuit board) surface or hole wall.This plasma cleans device 100 comprises housing 10, a plurality of positive plate 21, a plurality of negative plate 22, cathode power supply 31, negative power supply 32, a plurality of fixture 40, admission line 50 and discharge duct 60.
This housing 10 surrounds and forms a reative cell 101.This housing 10 has roof 11, diapire 12 and is connected the first side wall 13 and second sidewall 14 between this roof 11 and the diapire 12.This roof 11 is parallel relative with diapire 12.This first side wall 13 is parallel relative with second sidewall 14.
In the present embodiment, this roof 11 offers first passage 111 and second channel 112.A plurality of first subchannels 1112 that this first passage 111 has one first main channel 1111 and is connected with this first main channel 1111.One end of this first main channel 1111 runs through second sidewall 14.These a plurality of first subchannels 1112 run through and are communicated to reative cell 101.A plurality of second subchannels 1122 that this second channel 112 has one second main channel 1121 and is connected with this second main channel 1121.One end of this second main channel 1121 runs through the first side wall 13.These a plurality of second subchannels 1122 run through and are communicated to reative cell 101.
This diapire 12 offers third channel 121 and four-way 122.A plurality of the 3rd subchannels 1212 that this third channel 121 has one the 3rd main channel 1211 and is connected with the 3rd main channel 1211.One end of the 3rd main channel 1211 runs through second sidewall 14.These a plurality of the 3rd subchannels 1212 run through and are communicated to reative cell 101.A plurality of the 4th subchannels 1222 that this four-way 122 has one the 4th main channel 1221 and is connected with the 4th main channel 1221.One end of the 4th main channel 1221 runs through the first side wall 13.These a plurality of the 4th subchannels 1222 run through and are communicated to reative cell 101.
These a plurality of positive plates 21 are spaced in this reative cell 101 with a plurality of negative plates 22, and this reative cell 101 is separated into a plurality of reaction compartments 102.Each reaction compartment 102 constitutes by an adjacent positive plate 21 and negative plate 22.Particularly, these a plurality of positive plates 21 are arranged in parallel with a plurality of negative plates 22.This a plurality of positive plate 21, a plurality of negative plate 22 are all parallel with this first side wall 13.These a plurality of positive plates 21 are fixed to roof 11 and diapire 12 with a plurality of negative plates 22.Preferably, the material of these a plurality of positive plates 21 and a plurality of negative plates 22 is aluminum or aluminum alloy.
Please consult Fig. 2 in the lump, in the present embodiment, this a plurality of positive plate 21, a plurality of negative plate 22 are rectangle with the first side wall 13 parallel surfaces.These a plurality of positive plates 21 are provided with an insulation fixed frame 23 with the edge of a plurality of negative plates 22.This insulation fixed frame 23 is fixed to this roof 11 and diapire 12 with this positive plate 21 or negative plate 22.Preferably, the material of this insulation fixed frame 23 is a polytetrafluoroethylene (PTFE).
In addition, these a plurality of positive plates 21 also are provided with a plurality of cooling water pipes (figure does not show) with the inside of a plurality of negative plates 22.These a plurality of cooling water pipes are used for these a plurality of positive plates 21 are cooled off with a plurality of negative plates 22.
This cathode power supply 31 is arranged on outside this reative cell 101 and with these a plurality of positive plates 21 and is electrically connected.Particularly, this cathode power supply 31 has electric connection line 311.This cathode power supply 31 utilizes electric connection line 311 to pass this first main channel 1111 and these a plurality of first subchannels 1112 successively, to be electrically connected with these a plurality of positive plates 21 respectively.If the edge of these a plurality of positive plates 21 is provided with insulation fixed frame 23, the electric connection line 311 of this cathode power supply 31 also passes this insulation fixed frame 23 being electrically connected with these a plurality of positive plates 21.In the present embodiment, this cathode power supply 31 is RF power supply, i.e. radio-frequency power supply.
This negative power supply 32 is arranged on outside this reative cell 101 and with these a plurality of negative plates 22 and is electrically connected.Particularly, this negative power supply 32 has electric connection line 321.This negative power supply 32 utilizes electric connection line 321 to pass the 3rd main channel 1211 and these a plurality of the 3rd subchannels 1212 successively, to be electrically connected with these a plurality of negative plates 22 respectively.If the edge of these a plurality of negative plates 22 is provided with insulation fixed frame 23, the electric connection line 321 of this negative power supply 32 also passes this insulation fixed frame 23 being electrically connected with these a plurality of negative plates 22.In the present embodiment, this negative power supply 32 is RF power supply, i.e. radio-frequency power supply.
These a plurality of fixtures 40 are used for fixing a plurality of workpiece.Each fixture 40 all is fixed in housing 10 and is arranged in a reaction compartment 102.Particularly, each fixture 40 includes first fixed block 41 and second fixed block 42.This first fixed block 41 is fixed on the roof 11 of this housing 10, and this second fixed block 42 is fixed on the diapire 12 of this housing 10.This first fixed block 41 and second fixed block 42 the workpiece that is used to cooperatively interact with pending plasma cleans such as being fixedly clamped.In the present embodiment, this first fixed block 41 has first groove 412, this second fixed block 42 and have second groove 422 relative with first groove 412, and this first groove 412 and second groove 422 are used for the matching and fixing workpiece.
This admission line 50 comprises that inlet manifold 51 and a plurality of air inlets that are connected with this inlet manifold 51 are in charge of 52.This inlet manifold 51 extends in the housing 10 outside housing 10, is used for being in charge of 52 input gases to a plurality of air inlets.Be provided with at least one air inlet in each reaction compartment 102 and be in charge of 52.This at least one air inlet is in charge of 52 near positive plate 21.Each air inlet is in charge of 52 a plurality of nozzles of air supply 522 all is installed.Particularly, this inlet manifold 51 is arranged in this second main channel 1121.These a plurality of air inlets are in charge of 52 and are passed this second subchannel 1122 respectively and extend to respectively in these a plurality of reaction compartments 102, and are positioned at the side near positive plate 21.In the present embodiment, be provided with a plurality of air inlets in each reaction compartment 102 and be in charge of 52.A plurality of air inlets in each reaction compartment 102 are in charge of 52 and are parallel to each other and spaced set.A plurality of nozzles of air supply 522 spaced sets on 52 are in charge of in each air inlet.Preferably, this inlet manifold 51 and a plurality of air inlets are in charge of 52 material and are polytetrafluoroethylene (PTFE).
This discharge duct 60 comprises exhaust main 61 and a plurality of exhaust charges 62 that are connected with this exhaust main 61.This exhaust main 61 extends in the housing 10 outside housing 10.Be provided with at least one exhaust charge 62 in each reaction compartment 102.This at least one exhaust charge 62 is near negative plate.Each exhaust charge 62 all offers a plurality of steam vents 602.Particularly, this exhaust main 61 is arranged in the 4th main channel 1221.These a plurality of exhaust charges 62 pass the 4th subchannel 1222 respectively and extend to respectively in these a plurality of reaction compartments 102, and are positioned at the side near negative plate 22.In the present embodiment, be provided with a plurality of exhaust charges 62 in each reaction compartment 102.A plurality of exhaust charges 62 in each reaction compartment 102 are parallel to each other and spaced set.A plurality of steam vents 602 spaced sets that each exhaust charge 62 is offered.Preferably, the material of this exhaust main 61 and exhaust charge 62 is polytetrafluoroethylene (PTFE).
Wherein, in each reaction compartment 102, these a plurality of air inlets are in charge of 52 and can be equated with the quantity of a plurality of exhaust charges 62, also can be unequal.These a plurality of air inlets are in charge of 52 can be relative with a plurality of exhaust charge 62, also can be not relative.In the present embodiment, these a plurality of air inlets are in charge of 52 and are equated with the quantity of a plurality of exhaust charges 62, and these a plurality of air inlets are in charge of 52 relative with a plurality of exhaust charge 62.Certainly, in other embodiments, the quantity of this exhaust charge 62 also can be in charge of 61 quantity more than this air inlet, at this moment, these a plurality of air inlets be in charge of 52 with the setting of can staggering of these a plurality of exhaust charges 62.
In each reaction compartment 102, each air inlet is in charge of a plurality of nozzles of air supply 522 of 52 and can be equated with the quantity of the steam vent 602 of each exhaust charge 62, also can be unequal.A plurality of nozzles of air supply 522 of 52 are in charge of in each air inlet can be relative with the steam vent 602 of each exhaust charge 62, also can be not relative.In the present embodiment, each air inlet is in charge of a plurality of nozzles of air supply 522 of 52 and is equated with the quantity of the steam vent 602 of each exhaust charge 62, and the setting of staggering of each air inlet steam vent 602 of being in charge of a plurality of nozzles of air supply 522 of 52 and each exhaust charge 62.Certainly, in other embodiments, a plurality of nozzles of air supply 522 of 52 are in charge of in each air inlet can be more than the quantity of the steam vent 602 of each exhaust charge 62.The steam vent 602 that a plurality of nozzles of air supply of 52 522 and each exhaust charge 62 are in charge of in each air inlet also can be oppositely arranged.
See also Fig. 3, the plasma cleans method that the present technique scheme also provides a kind of pollutant that utilizes 100 pairs of surface of the works of above-mentioned plasma cleans device or hole wall to clean.This plasma cleans method may further comprise the steps:
Step 1 provides a plurality of workpiece to be cleaned, is used to produce the reacting gas and the aforesaid plasma cleans device 100 of plasma.This workpiece can be the circuit board 200 after the boring, and each circuit board 200 all has a plurality of through holes 201, and the hole wall of each through hole 201 possibly have the pollutant that glue slag, dust etc. need removal.
Step 2 utilizes these a plurality of fixtures 40 respectively a plurality of workpiece clamp to be cleaned to be tightly fixed in these a plurality of reaction compartments 102.
Step 3 vacuumizes processing to these a plurality of reaction compartments 102.
Particularly, can be with inlet manifold 51 sealing, and utilize such as the such air extractor of vavuum pump (figure does not show) and link to each other with exhaust main 61, so that these a plurality of reaction compartments 102 are vacuumized processing.
Step 4; Reacting gas is injected in these a plurality of reaction compartments 102 through admission line 50; Open cathode power supply 31 and give these a plurality of positive plates 21 and a plurality of negative plate 22 power supplies, in each reaction compartment 102, to form a high voltage electric field respectively with negative power supply 32.
Particularly, at first, before feeding reacting gas, should be earlier with exhaust main 61 sealings, in order to avoid ambient atmosphere gets into the vacuum environment of destroying in these a plurality of reaction compartments 102.Then, make reacting gas enter into these a plurality of air inlets through this inlet manifold 51 earlier and be in charge of 52, be injected in these a plurality of reaction compartments 102 through these a plurality of nozzles of air supply 522 again.Then, when cathode power supply 31 and negative power supply 32 give respectively should a plurality of positive plates 21 with a plurality of negative plates 22 power supplies after, between a positive plate 21 of each reaction compartment 102 correspondence and a negative plate 22, form a high voltage electric field respectively.
Step 5, the high voltage electric field of these a plurality of reaction compartments 102 generates plasma with reacting gas ionization, and the plasma bombardment surface of the work is with these a plurality of workpiece of cleaning.
Since reacting gas be respectively under the high voltage electric field effect of each reaction compartment 102 ionization generate plasma; Therefore; The CONCENTRATION DISTRIBUTION of the plasma that generates in each reaction compartment 102 is comparatively even, thereby can clean preferably circuit board 200 surfaces in each reaction compartment 102 or the pollutant of hole wall.Circuit board is being carried out in the cleaning course, and constantly postreaction gas bombards cleaning continue to generate plasma to the pollutant of circuit board 200 surfaces or hole wall.
Step 6 is discharged the waste gas that plasma is produced this a plurality of workpiece cleanings back through discharge duct 60.
Particularly, plasma cleans waste gas that the back generates to circuit board 200 and can extract discharge via this a plurality of exhaust charge 62, exhaust main 61.And; Bombard in the process of cleaning at the pollutant of the lasting generation of reacting gas plasma circuit board 200 surfaces or hole wall; This discharge duct 60 can intermittently extract the waste gas that produces in each reaction compartment 102, so that can keep enough plasmas that circuit board 200 is cleaned in each reaction compartment 102.
The pollutant of treating circuit board 200 surfaces or hole wall just can be stopped supply response gas by after cleaning is removed fully, and these a plurality of reaction compartments 102 interior waste gas are thoroughly extracted.At last, just can in these a plurality of reaction compartments 102, charge into atmosphere, and a plurality of circuit boards after will cleaning 200 take out, thereby accomplished the plasma cleans of circuit board 200.
With respect to prior art; The plasma cleans device of present technique scheme and plasma cleans method; It utilizes spaced a plurality of positive plate and a plurality of negative plate that reative cell is separated into a plurality of reaction compartments; And in these a plurality of reaction compartments, be provided with near the air inlet of positive plate be in charge of, near the exhaust charge of negative plate; Thereby can in each reaction compartment, form a high voltage electric field respectively at these a plurality of positive plates and a plurality of negative plate energising back, the CONCENTRATION DISTRIBUTION of the plasma that the feasible reacting gas that enters into each reaction compartment generates is comparatively even, and the formation speed of plasma is very fast; And then can effectively bombard cleaning, and improve the cleaning efficiency of workpiece to the pollutant of surface of the work in each reaction compartment or hole wall.
It is understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion, and all these change the protection domain that all should belong to present technique scheme claim with distortion according to the technical conceive of present technique scheme.