CN102652946A - Plasma cleaning device and plasma cleaning method - Google Patents

Plasma cleaning device and plasma cleaning method Download PDF

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Publication number
CN102652946A
CN102652946A CN201110053151XA CN201110053151A CN102652946A CN 102652946 A CN102652946 A CN 102652946A CN 201110053151X A CN201110053151X A CN 201110053151XA CN 201110053151 A CN201110053151 A CN 201110053151A CN 102652946 A CN102652946 A CN 102652946A
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China
Prior art keywords
charge
plasma
exhaust
power supply
negative
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CN201110053151XA
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Chinese (zh)
Inventor
郑建邦
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Avary Holding Shenzhen Co Ltd
Zhending Technology Co Ltd
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Fukui Precision Component Shenzhen Co Ltd
Zhending Technology Co Ltd
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Priority to CN201110053151XA priority Critical patent/CN102652946A/en
Priority to TW100108362A priority patent/TWI414000B/en
Publication of CN102652946A publication Critical patent/CN102652946A/en
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Abstract

一种等离子清洁装置,包括壳体、多个正极板、多个负极板、正极电源、负极电源、多个固定件、进气管道及排气管道。壳体围合形成一个反应室。多个正极板与多个负极板间隔排列并将反应室分隔成多个反应空间。多个固定件均固定于外壳且分别位于一个反应空间中。进气管道包括进气总管及多个进气分管,进气总管自壳体外延伸入壳体内。每个反应空间内均设置有至少一个靠近正极板的进气分管。该排气管道包括排气总管及多个排气分管。该排气总管自壳体外延伸入壳体内,每个反应空间内均设置有至少一个靠近负极板的排气分管。每个排气分管均开设有多个排气孔。本发明还提供一种使用上述等离子清洁装置的等离子清洁方法。

A plasma cleaning device includes a casing, a plurality of positive plates, a plurality of negative plates, a positive power supply, a negative power supply, a plurality of fixing parts, an air intake pipe and an exhaust pipe. The casing encloses to form a reaction chamber. A plurality of positive plates and a plurality of negative plates are arranged at intervals and the reaction chamber is divided into a plurality of reaction spaces. A plurality of fixing parts are all fixed on the shell and are respectively located in a reaction space. The air intake pipe includes an air intake main pipe and a plurality of air intake branch pipes, and the air intake main pipe extends from the outside of the housing into the housing. Each reaction space is provided with at least one gas inlet manifold close to the positive plate. The exhaust pipe includes an exhaust main pipe and a plurality of exhaust branch pipes. The exhaust main pipe extends from the outside of the casing into the casing, and each reaction space is provided with at least one exhaust branch pipe close to the negative plate. Each exhaust branch pipe is provided with a plurality of exhaust holes. The present invention also provides a plasma cleaning method using the above plasma cleaning device.

Description

Plasma cleans device and plasma cleans method
Technical field
The present invention relates to plasma technology, particularly a kind of plasma cleans device and plasma cleans method.
Background technology
The plasma cleans device mainly utilizes plasma that the pollutant of surface of the work or hole wall is cleaned.The general work principle does; The plasma cleans device generates the plasma of high-speed motion; This plasma bombards the pollutant of surface of the work or hole wall; And complicated physical reactions and chemical reaction take place, make the chemical bond rupture in the pollutant or take away pollutant with decomposition through reduction reaction.
At present, the plasma cleans device generally adopts the grid type electrode to produce plasma.Particularly; Reacting gas gets into from the inlet of reative cell; Then successively through the grid type electrode; And generate plasma in the electric field that between a plurality of positive poles of grid type electrode and a plurality of negative pole, forms, and plasma bombards surface of the work or the pollutant of hole wall that is placed between these a plurality of positive poles and a plurality of negative pole, and the waste gas that reacted plasma forms is extracted discharge from the outlet of reative cell.Yet because the reative cell of this plasma cleans device has only an inlet and an outlet, reacting gas is diffused into outlet from inlet needs certain hour, and the concentration of reacting gas that causes the porch is greater than the concentration in exit.Thereby; Make near the concentration of the plasma that produces between the positive pole of porch and negative pole greater than concentration near the plasma that produces between the positive pole in exit and negative pole; Cause the CONCENTRATION DISTRIBUTION of plasma uneven; Different to being positioned near the inlet with the cleaning capacity of near surface of the work of outlet or hole wall, can not be near the pollutant of near surface of the work the exit or hole wall by effective removal.And; Because plasma and pollutant near the porch react earlier; The waste gas of its generation is fled near surface of the work or the hole wall the outlet; Near the feasible outlet plasma has mixed waste gas, has further reduced near the cleaning capacity of the plasma the outlet to surface of the work or hole wall, and near the surface of the work the feasible outlet or the pollutant of hole wall can not be removed efficiently more.
Therefore; To the problems referred to above; Be necessary to provide a kind of and improve the uniformity that plasma density distributes in the reative cell, and can effectively remove the plasma cleans device and the plasma cleans method of the pollutant of the surface of the work that is placed on each position in the reative cell or hole wall.
Summary of the invention
To a kind of plasma cleans device and plasma cleans method be described with specific embodiment below.
A kind of plasma cleans device comprises housing, a plurality of positive plate, a plurality of negative plate, cathode power supply, negative power supply, a plurality of fixture, admission line and discharge duct.This housing surrounds and forms a reative cell.These a plurality of positive plates and a plurality of negative plate are spaced in this reative cell and this reative cell are separated into a plurality of reaction compartments.Each reaction compartment constitutes by an adjacent positive plate and negative plate.This cathode power supply is arranged on outside this reative cell and with these a plurality of positive plates and is electrically connected, and this negative power supply is arranged on outside this reative cell and with these a plurality of negative plates and is electrically connected.These a plurality of fixtures are used for fixing a plurality of workpiece, and each fixture all is fixed in shell and is arranged in a reaction compartment.This admission line comprises that the inlet manifold reaches a plurality of air inlets that are connected with this inlet manifold and is in charge of.This inlet manifold extends into outside housing in the housing, is used for being in charge of input gas to a plurality of air inlets.Being provided with at least one air inlet in each reaction compartment is in charge of.This at least one air inlet is in charge of near positive plate, and each air inlet is in charge of a plurality of nozzles of air supply all are installed.This discharge duct comprises exhaust main and a plurality of exhaust charges that are connected with this exhaust main.This exhaust main extends in the housing outside housing.Be provided with at least one exhaust charge in each reaction compartment.This at least one exhaust charge is near negative plate, and each exhaust charge all offers a plurality of steam vents.
A kind of plasma cleans method comprises step: a plurality of workpiece to be cleaned are provided, are used to produce the reacting gas and the aforesaid plasma cleans device of plasma; Utilize a plurality of fixtures respectively a plurality of workpiece clamp to be cleaned to be tightly fixed in these a plurality of reaction compartments; These a plurality of reaction compartments are vacuumized processing; Reacting gas is injected in these a plurality of reaction compartments through admission line, opens cathode power supply and negative power supply and give these a plurality of positive plates and the power supply of a plurality of negative plate, in each reaction compartment, to form a high voltage electric field respectively; The high voltage electric field of each reaction compartment generates plasma with reacting gas ionization, and the plasma bombardment surface of the work is with these a plurality of workpiece of cleaning; And discharge plasma through discharge duct these a plurality of workpiece are cleaned the waste gas that the back generates.
With respect to prior art; The plasma cleans device of present technique scheme and plasma cleans method; It utilizes spaced a plurality of positive plate and a plurality of negative plate that reative cell is separated into a plurality of reaction compartments; And in these a plurality of reaction compartments, be provided with near the air inlet of positive plate be in charge of, near the exhaust charge of negative plate; Thereby can in each reaction compartment, form a high voltage electric field respectively at these a plurality of positive plates and a plurality of negative plate energising back, the CONCENTRATION DISTRIBUTION of the plasma that the feasible reacting gas that enters into each reaction compartment generates is comparatively even, and the formation speed of plasma is very fast; And then can effectively bombard cleaning, and improve the cleaning efficiency of workpiece to the pollutant of surface of the work in each reaction compartment or hole wall.
Description of drawings
Fig. 1 is the plasma cleans schematic representation of apparatus that present technique scheme implementation example provides.
Fig. 2 is that the sketch map with exhaust charge is in charge of in positive plate, negative plate, the air inlet of the plasma cleans device of Fig. 1.
Fig. 3 utilizes the plasma cleans device of Fig. 1 workpiece to be carried out the sketch map of plasma cleans.
The main element symbol description
Plasma cleans device 100
Housing 10
Positive plate 21
Negative plate 22
Insulation fixed frame 23
Cathode power supply 31
Negative power supply 32
Fixture 40
Admission line 50
Discharge duct 60
The inlet manifold 51
Air inlet is in charge of 52
Nozzle of air supply 522
Exhaust main 61
Exhaust charge 62
Reative cell 101
Reaction compartment 102
Roof 11
Diapire 12
The first side wall 13
Second sidewall 14
First passage 111
Second channel 112
Third channel 121
Four-way 122
First main channel 1111
First subchannel 1112
Second main channel 1121
Second subchannel 1122
The 3rd main channel 1211
The 3rd subchannel 1212
The 4th main channel 1221
The 4th subchannel 1222
Electric connection line 311,321
First fixed block 41
Second fixed block 42
First groove 412
Second groove 422
Steam vent 602
Circuit board 200
Through hole 201
The specific embodiment
To combine accompanying drawing and embodiment that the plasma cleans device and the plasma cleans method of present technique scheme are done further explain below.
See also Fig. 1, present technique scheme implementation example provides a kind of plasma cleans device 100, is used to remove the pollutant of workpiece (for example circuit board) surface or hole wall.This plasma cleans device 100 comprises housing 10, a plurality of positive plate 21, a plurality of negative plate 22, cathode power supply 31, negative power supply 32, a plurality of fixture 40, admission line 50 and discharge duct 60.
This housing 10 surrounds and forms a reative cell 101.This housing 10 has roof 11, diapire 12 and is connected the first side wall 13 and second sidewall 14 between this roof 11 and the diapire 12.This roof 11 is parallel relative with diapire 12.This first side wall 13 is parallel relative with second sidewall 14.
In the present embodiment, this roof 11 offers first passage 111 and second channel 112.A plurality of first subchannels 1112 that this first passage 111 has one first main channel 1111 and is connected with this first main channel 1111.One end of this first main channel 1111 runs through second sidewall 14.These a plurality of first subchannels 1112 run through and are communicated to reative cell 101.A plurality of second subchannels 1122 that this second channel 112 has one second main channel 1121 and is connected with this second main channel 1121.One end of this second main channel 1121 runs through the first side wall 13.These a plurality of second subchannels 1122 run through and are communicated to reative cell 101.
This diapire 12 offers third channel 121 and four-way 122.A plurality of the 3rd subchannels 1212 that this third channel 121 has one the 3rd main channel 1211 and is connected with the 3rd main channel 1211.One end of the 3rd main channel 1211 runs through second sidewall 14.These a plurality of the 3rd subchannels 1212 run through and are communicated to reative cell 101.A plurality of the 4th subchannels 1222 that this four-way 122 has one the 4th main channel 1221 and is connected with the 4th main channel 1221.One end of the 4th main channel 1221 runs through the first side wall 13.These a plurality of the 4th subchannels 1222 run through and are communicated to reative cell 101.
These a plurality of positive plates 21 are spaced in this reative cell 101 with a plurality of negative plates 22, and this reative cell 101 is separated into a plurality of reaction compartments 102.Each reaction compartment 102 constitutes by an adjacent positive plate 21 and negative plate 22.Particularly, these a plurality of positive plates 21 are arranged in parallel with a plurality of negative plates 22.This a plurality of positive plate 21, a plurality of negative plate 22 are all parallel with this first side wall 13.These a plurality of positive plates 21 are fixed to roof 11 and diapire 12 with a plurality of negative plates 22.Preferably, the material of these a plurality of positive plates 21 and a plurality of negative plates 22 is aluminum or aluminum alloy.
Please consult Fig. 2 in the lump, in the present embodiment, this a plurality of positive plate 21, a plurality of negative plate 22 are rectangle with the first side wall 13 parallel surfaces.These a plurality of positive plates 21 are provided with an insulation fixed frame 23 with the edge of a plurality of negative plates 22.This insulation fixed frame 23 is fixed to this roof 11 and diapire 12 with this positive plate 21 or negative plate 22.Preferably, the material of this insulation fixed frame 23 is a polytetrafluoroethylene (PTFE).
In addition, these a plurality of positive plates 21 also are provided with a plurality of cooling water pipes (figure does not show) with the inside of a plurality of negative plates 22.These a plurality of cooling water pipes are used for these a plurality of positive plates 21 are cooled off with a plurality of negative plates 22.
This cathode power supply 31 is arranged on outside this reative cell 101 and with these a plurality of positive plates 21 and is electrically connected.Particularly, this cathode power supply 31 has electric connection line 311.This cathode power supply 31 utilizes electric connection line 311 to pass this first main channel 1111 and these a plurality of first subchannels 1112 successively, to be electrically connected with these a plurality of positive plates 21 respectively.If the edge of these a plurality of positive plates 21 is provided with insulation fixed frame 23, the electric connection line 311 of this cathode power supply 31 also passes this insulation fixed frame 23 being electrically connected with these a plurality of positive plates 21.In the present embodiment, this cathode power supply 31 is RF power supply, i.e. radio-frequency power supply.
This negative power supply 32 is arranged on outside this reative cell 101 and with these a plurality of negative plates 22 and is electrically connected.Particularly, this negative power supply 32 has electric connection line 321.This negative power supply 32 utilizes electric connection line 321 to pass the 3rd main channel 1211 and these a plurality of the 3rd subchannels 1212 successively, to be electrically connected with these a plurality of negative plates 22 respectively.If the edge of these a plurality of negative plates 22 is provided with insulation fixed frame 23, the electric connection line 321 of this negative power supply 32 also passes this insulation fixed frame 23 being electrically connected with these a plurality of negative plates 22.In the present embodiment, this negative power supply 32 is RF power supply, i.e. radio-frequency power supply.
These a plurality of fixtures 40 are used for fixing a plurality of workpiece.Each fixture 40 all is fixed in housing 10 and is arranged in a reaction compartment 102.Particularly, each fixture 40 includes first fixed block 41 and second fixed block 42.This first fixed block 41 is fixed on the roof 11 of this housing 10, and this second fixed block 42 is fixed on the diapire 12 of this housing 10.This first fixed block 41 and second fixed block 42 the workpiece that is used to cooperatively interact with pending plasma cleans such as being fixedly clamped.In the present embodiment, this first fixed block 41 has first groove 412, this second fixed block 42 and have second groove 422 relative with first groove 412, and this first groove 412 and second groove 422 are used for the matching and fixing workpiece.
This admission line 50 comprises that inlet manifold 51 and a plurality of air inlets that are connected with this inlet manifold 51 are in charge of 52.This inlet manifold 51 extends in the housing 10 outside housing 10, is used for being in charge of 52 input gases to a plurality of air inlets.Be provided with at least one air inlet in each reaction compartment 102 and be in charge of 52.This at least one air inlet is in charge of 52 near positive plate 21.Each air inlet is in charge of 52 a plurality of nozzles of air supply 522 all is installed.Particularly, this inlet manifold 51 is arranged in this second main channel 1121.These a plurality of air inlets are in charge of 52 and are passed this second subchannel 1122 respectively and extend to respectively in these a plurality of reaction compartments 102, and are positioned at the side near positive plate 21.In the present embodiment, be provided with a plurality of air inlets in each reaction compartment 102 and be in charge of 52.A plurality of air inlets in each reaction compartment 102 are in charge of 52 and are parallel to each other and spaced set.A plurality of nozzles of air supply 522 spaced sets on 52 are in charge of in each air inlet.Preferably, this inlet manifold 51 and a plurality of air inlets are in charge of 52 material and are polytetrafluoroethylene (PTFE).
This discharge duct 60 comprises exhaust main 61 and a plurality of exhaust charges 62 that are connected with this exhaust main 61.This exhaust main 61 extends in the housing 10 outside housing 10.Be provided with at least one exhaust charge 62 in each reaction compartment 102.This at least one exhaust charge 62 is near negative plate.Each exhaust charge 62 all offers a plurality of steam vents 602.Particularly, this exhaust main 61 is arranged in the 4th main channel 1221.These a plurality of exhaust charges 62 pass the 4th subchannel 1222 respectively and extend to respectively in these a plurality of reaction compartments 102, and are positioned at the side near negative plate 22.In the present embodiment, be provided with a plurality of exhaust charges 62 in each reaction compartment 102.A plurality of exhaust charges 62 in each reaction compartment 102 are parallel to each other and spaced set.A plurality of steam vents 602 spaced sets that each exhaust charge 62 is offered.Preferably, the material of this exhaust main 61 and exhaust charge 62 is polytetrafluoroethylene (PTFE).
Wherein, in each reaction compartment 102, these a plurality of air inlets are in charge of 52 and can be equated with the quantity of a plurality of exhaust charges 62, also can be unequal.These a plurality of air inlets are in charge of 52 can be relative with a plurality of exhaust charge 62, also can be not relative.In the present embodiment, these a plurality of air inlets are in charge of 52 and are equated with the quantity of a plurality of exhaust charges 62, and these a plurality of air inlets are in charge of 52 relative with a plurality of exhaust charge 62.Certainly, in other embodiments, the quantity of this exhaust charge 62 also can be in charge of 61 quantity more than this air inlet, at this moment, these a plurality of air inlets be in charge of 52 with the setting of can staggering of these a plurality of exhaust charges 62.
In each reaction compartment 102, each air inlet is in charge of a plurality of nozzles of air supply 522 of 52 and can be equated with the quantity of the steam vent 602 of each exhaust charge 62, also can be unequal.A plurality of nozzles of air supply 522 of 52 are in charge of in each air inlet can be relative with the steam vent 602 of each exhaust charge 62, also can be not relative.In the present embodiment, each air inlet is in charge of a plurality of nozzles of air supply 522 of 52 and is equated with the quantity of the steam vent 602 of each exhaust charge 62, and the setting of staggering of each air inlet steam vent 602 of being in charge of a plurality of nozzles of air supply 522 of 52 and each exhaust charge 62.Certainly, in other embodiments, a plurality of nozzles of air supply 522 of 52 are in charge of in each air inlet can be more than the quantity of the steam vent 602 of each exhaust charge 62.The steam vent 602 that a plurality of nozzles of air supply of 52 522 and each exhaust charge 62 are in charge of in each air inlet also can be oppositely arranged.
See also Fig. 3, the plasma cleans method that the present technique scheme also provides a kind of pollutant that utilizes 100 pairs of surface of the works of above-mentioned plasma cleans device or hole wall to clean.This plasma cleans method may further comprise the steps:
Step 1 provides a plurality of workpiece to be cleaned, is used to produce the reacting gas and the aforesaid plasma cleans device 100 of plasma.This workpiece can be the circuit board 200 after the boring, and each circuit board 200 all has a plurality of through holes 201, and the hole wall of each through hole 201 possibly have the pollutant that glue slag, dust etc. need removal.
Step 2 utilizes these a plurality of fixtures 40 respectively a plurality of workpiece clamp to be cleaned to be tightly fixed in these a plurality of reaction compartments 102.
Step 3 vacuumizes processing to these a plurality of reaction compartments 102.
Particularly, can be with inlet manifold 51 sealing, and utilize such as the such air extractor of vavuum pump (figure does not show) and link to each other with exhaust main 61, so that these a plurality of reaction compartments 102 are vacuumized processing.
Step 4; Reacting gas is injected in these a plurality of reaction compartments 102 through admission line 50; Open cathode power supply 31 and give these a plurality of positive plates 21 and a plurality of negative plate 22 power supplies, in each reaction compartment 102, to form a high voltage electric field respectively with negative power supply 32.
Particularly, at first, before feeding reacting gas, should be earlier with exhaust main 61 sealings, in order to avoid ambient atmosphere gets into the vacuum environment of destroying in these a plurality of reaction compartments 102.Then, make reacting gas enter into these a plurality of air inlets through this inlet manifold 51 earlier and be in charge of 52, be injected in these a plurality of reaction compartments 102 through these a plurality of nozzles of air supply 522 again.Then, when cathode power supply 31 and negative power supply 32 give respectively should a plurality of positive plates 21 with a plurality of negative plates 22 power supplies after, between a positive plate 21 of each reaction compartment 102 correspondence and a negative plate 22, form a high voltage electric field respectively.
Step 5, the high voltage electric field of these a plurality of reaction compartments 102 generates plasma with reacting gas ionization, and the plasma bombardment surface of the work is with these a plurality of workpiece of cleaning.
Since reacting gas be respectively under the high voltage electric field effect of each reaction compartment 102 ionization generate plasma; Therefore; The CONCENTRATION DISTRIBUTION of the plasma that generates in each reaction compartment 102 is comparatively even, thereby can clean preferably circuit board 200 surfaces in each reaction compartment 102 or the pollutant of hole wall.Circuit board is being carried out in the cleaning course, and constantly postreaction gas bombards cleaning continue to generate plasma to the pollutant of circuit board 200 surfaces or hole wall.
Step 6 is discharged the waste gas that plasma is produced this a plurality of workpiece cleanings back through discharge duct 60.
Particularly, plasma cleans waste gas that the back generates to circuit board 200 and can extract discharge via this a plurality of exhaust charge 62, exhaust main 61.And; Bombard in the process of cleaning at the pollutant of the lasting generation of reacting gas plasma circuit board 200 surfaces or hole wall; This discharge duct 60 can intermittently extract the waste gas that produces in each reaction compartment 102, so that can keep enough plasmas that circuit board 200 is cleaned in each reaction compartment 102.
The pollutant of treating circuit board 200 surfaces or hole wall just can be stopped supply response gas by after cleaning is removed fully, and these a plurality of reaction compartments 102 interior waste gas are thoroughly extracted.At last, just can in these a plurality of reaction compartments 102, charge into atmosphere, and a plurality of circuit boards after will cleaning 200 take out, thereby accomplished the plasma cleans of circuit board 200.
With respect to prior art; The plasma cleans device of present technique scheme and plasma cleans method; It utilizes spaced a plurality of positive plate and a plurality of negative plate that reative cell is separated into a plurality of reaction compartments; And in these a plurality of reaction compartments, be provided with near the air inlet of positive plate be in charge of, near the exhaust charge of negative plate; Thereby can in each reaction compartment, form a high voltage electric field respectively at these a plurality of positive plates and a plurality of negative plate energising back, the CONCENTRATION DISTRIBUTION of the plasma that the feasible reacting gas that enters into each reaction compartment generates is comparatively even, and the formation speed of plasma is very fast; And then can effectively bombard cleaning, and improve the cleaning efficiency of workpiece to the pollutant of surface of the work in each reaction compartment or hole wall.
It is understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion, and all these change the protection domain that all should belong to present technique scheme claim with distortion according to the technical conceive of present technique scheme.

Claims (10)

1. plasma cleans device; Comprise housing, a plurality of positive plate, a plurality of negative plate, cathode power supply, negative power supply, a plurality of fixture, admission line and discharge duct, this housing surrounds and forms a reative cell, and these a plurality of positive plates and a plurality of negative plate are spaced in this reative cell and this reative cell is separated into a plurality of reaction compartments; Each reaction compartment constitutes by an adjacent positive plate and negative plate; This cathode power supply is arranged on outside this reative cell and with these a plurality of positive plates and is electrically connected, and this negative power supply is arranged on outside this reative cell and with these a plurality of negative plates and is electrically connected, and these a plurality of fixtures are used for fixing a plurality of workpiece; Each fixture all is fixed in shell and is arranged in a reaction compartment; This admission line comprises that the inlet manifold reaches a plurality of air inlets that are connected with this inlet manifold and is in charge of, and this inlet manifold extends into outside housing in the housing, is used for being in charge of input gas to a plurality of air inlets; Being provided with at least one air inlet in each reaction compartment is in charge of; This at least one air inlet is in charge of near positive plate, and each air inlet is in charge of a plurality of nozzles of air supply all are installed, and this discharge duct comprises exhaust main and a plurality of exhaust charges that are connected with this exhaust main; This exhaust main extends in the housing outside housing; Be provided with at least one exhaust charge in each reaction compartment, this at least one exhaust charge is near negative plate, and each exhaust charge all offers a plurality of steam vents.
2. plasma cleans device as claimed in claim 1 is characterized in that, these a plurality of positive plates and a plurality of negative plate are arranged in parallel.
3. plasma cleans device as claimed in claim 1; It is characterized in that; This housing has roof, diapire and is connected the first side wall and second sidewall between this roof and the diapire, and this roof is parallel with diapire relatively, and this first side wall is relative with second parallel sidewalls; These a plurality of positive plates, a plurality of negative plate are all parallel with this first side wall, and these a plurality of positive plates and a plurality of negative plate are fixed to roof and diapire.
4. plasma cleans device as claimed in claim 3; It is characterized in that; These a plurality of positive plates, a plurality of negative plate surface parallel with the first side wall are rectangle; The edge of these a plurality of positive plates and a plurality of negative plates is provided with an insulation fixed frame, and this insulation fixed frame is fixed to this roof and diapire with this positive plate or negative plate.
5. plasma cleans device as claimed in claim 4 is characterized in that, the material of this insulation fixed frame is a polytetrafluoroethylene (PTFE).
6. plasma cleans device as claimed in claim 3; It is characterized in that each fixture includes first fixed block and second fixed block, this first fixed block is fixed on the roof of this housing; And has first groove; This second fixed block is fixed on the diapire of this housing, and has second groove relative with first groove, and this first groove and second groove are used for the matching and fixing workpiece.
7. plasma cleans device as claimed in claim 1 is characterized in that, this at least one air inlet is in charge of for a plurality of air inlets and is in charge of, and these a plurality of air inlets are in charge of and are parallel to each other and spaced set.
8. plasma cleans device as claimed in claim 1 is characterized in that, these a plurality of nozzle of air supply spaced sets.
9. plasma cleans device as claimed in claim 1 is characterized in that this cathode power supply and negative power supply are radio-frequency power supply.
10. plasma cleans method comprises step:
A plurality of workpiece to be cleaned are provided, are used to produce the reacting gas and the plasma cleans device as claimed in claim 1 of plasma;
Utilize a plurality of fixtures respectively a plurality of workpiece clamp to be cleaned to be tightly fixed in these a plurality of reaction compartments;
These a plurality of reaction compartments are vacuumized processing;
Reacting gas is injected in these a plurality of reaction compartments through admission line, opens cathode power supply and negative power supply and give these a plurality of positive plates and the power supply of a plurality of negative plate, in each reaction compartment, to form a high voltage electric field respectively;
The high voltage electric field of each reaction compartment generates plasma with reacting gas ionization, and the plasma bombardment surface of the work is with these a plurality of workpiece of cleaning; And
Discharge the waste gas that plasma generates this a plurality of workpiece cleanings back through discharge duct.
CN201110053151XA 2011-03-04 2011-03-04 Plasma cleaning device and plasma cleaning method Pending CN102652946A (en)

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CN201110053151XA CN102652946A (en) 2011-03-04 2011-03-04 Plasma cleaning device and plasma cleaning method
TW100108362A TWI414000B (en) 2011-03-04 2011-03-11 Plasma desmear device and method

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897154A (en) * 1994-09-26 1996-04-12 Sony Corp Vacuum film formation system
JP2000012471A (en) * 1998-06-25 2000-01-14 Agency Of Ind Science & Technol Plasma cvd system, and solar cells and plasma cvd method manufacturing the same
JP2003297759A (en) * 2002-04-01 2003-10-17 Mitsubishi Heavy Ind Ltd Plasma cvd device and plasma cvd film manufacturing method
JP3477387B2 (en) * 1998-12-22 2003-12-10 三菱重工業株式会社 Gas supply device and connector structure
CN101587827A (en) * 2008-05-20 2009-11-25 诺信公司 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
TW535204B (en) * 2002-05-09 2003-06-01 Creating Nano Tecnhologies Inc Plasma cleaning method
KR100603434B1 (en) * 2004-12-30 2006-07-20 (주)프로닉스 Plasma cleaning equipment
JP2006196681A (en) * 2005-01-13 2006-07-27 Sharp Corp Plasma processing device and semiconductor element manufactured by the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897154A (en) * 1994-09-26 1996-04-12 Sony Corp Vacuum film formation system
JP2000012471A (en) * 1998-06-25 2000-01-14 Agency Of Ind Science & Technol Plasma cvd system, and solar cells and plasma cvd method manufacturing the same
JP3477387B2 (en) * 1998-12-22 2003-12-10 三菱重工業株式会社 Gas supply device and connector structure
JP2003297759A (en) * 2002-04-01 2003-10-17 Mitsubishi Heavy Ind Ltd Plasma cvd device and plasma cvd film manufacturing method
CN101587827A (en) * 2008-05-20 2009-11-25 诺信公司 Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105984850A (en) * 2015-02-10 2016-10-05 江西永丰博源实业有限公司 Free radical ionizer
CN107424897A (en) * 2017-05-16 2017-12-01 上海稷以科技有限公司 Plasma surface processor and plasma apparatus cavity body structure
CN107424897B (en) * 2017-05-16 2019-11-15 上海稷以科技有限公司 Plasma surface processor and plasma apparatus cavity body structure
CN107774624A (en) * 2017-10-27 2018-03-09 马硕远 A kind of air filter cloth cleaner
CN109548286A (en) * 2018-10-31 2019-03-29 广合科技(广州)有限公司 A kind of method of plasma desmearing
CN111299253A (en) * 2020-03-10 2020-06-19 北京烁科精微电子装备有限公司 Plasma cleaning device
CN111299253B (en) * 2020-03-10 2022-02-22 北京烁科精微电子装备有限公司 Plasma cleaning device
CN115156195A (en) * 2022-06-10 2022-10-11 深圳泰德半导体装备有限公司 Plasma cleaning device

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