CN101835339B - Panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure - Google Patents
Panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure Download PDFInfo
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- CN101835339B CN101835339B CN2010101807255A CN201010180725A CN101835339B CN 101835339 B CN101835339 B CN 101835339B CN 2010101807255 A CN2010101807255 A CN 2010101807255A CN 201010180725 A CN201010180725 A CN 201010180725A CN 101835339 B CN101835339 B CN 101835339B
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 16
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 230000008878 coupling Effects 0.000 title claims abstract description 9
- 238000010168 coupling process Methods 0.000 title claims abstract description 9
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- 239000003595 mist Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000006978 adaptation Effects 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005495 cold plasma Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 abstract description 3
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- 238000004659 sterilization and disinfection Methods 0.000 abstract 2
- 239000012774 insulation material Substances 0.000 abstract 1
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- 230000001954 sterilising effect Effects 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 description 7
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 238000007599 discharging Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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Abstract
The invention relates to a panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure, which belongs to the field of plasma technology. The generator is composed of two water-cooling plate metal electrodes, the surfaces of which are parallel, wherein, one electrode is connected to a radio-frequency power supply through a matcher; the other electrode is connected to the ground and discharges under open constant pressure; and insulation material slats are bonded to the electrode adjacent to a gas inlet to form a gas inlet channel, the gas inlet channel is connected to a distribution system through a plurality of gas inlet conduits, and uniform and stable cold plasma formed by discharge between gaps of electrode plates flows out from electrode outlet ends to form extensive plasma jet. The invention has the advantage that extensive, uniform and stable low-temperature cold plasma jet with high concentration of reactive particles is generated by using argon-oxygen or argon-nitrogen as working gas so that the application of the plasma technology in surface cleaning, sterilization, disinfection, oxidation of circuit boards and surface modification can be realized.
Description
Technical field
The invention belongs to technical field of plasma; Relating under the open condition of atmospheric pressure the driving at radio-frequency power supply, to use argon gas down be carrier gas, and mixture of oxygen or nitrogen isoreactivity gas are through the technology of glow discharge generation large tracts of land, uniform cold-plasma jet simultaneously.
Background technology
In recent years, atmospheric pressure nonequilibrium plasma discharge technology is owing to broken away from the restriction of vacuum chamber and caused domestic and international researcher's extensive interest in boundless application prospects in field such as biomedicine, electronics industry, national defence.Low pressure discharge material Processing by Plasma process with traditional is compared; Atmospheric pressure nonequilibrium plasma material processing; Need under vacuum condition, not carry out; Greatly reduce the construction and the maintenance cost of equipment like this, solved the restriction that receives the vacuum chamber volume in the practical application simultaneously, and can produce a large amount of living radicals under the situation of lower at discharge gas temperature (25-200 ℃).Late 1960s is to the beginning of the seventies; Schwab etc. utilize air; Under atmospheric pressure adopt and earlier two metal electrodes are placed contact condition, the method for when electric current reaches certain value, separating has gradually again obtained radio frequency glow discharge or the arc discharge under the atmospheric pressure.Kanazawa in 1988 etc. have proposed to realize the condition of stable discharging under the atmospheric pressure: with the helium is carrier gas, covers one deck dielectric at electrode surface, and used power work frequency is more than KHz.The Selwyn of U.S. LosAlamous National Laboratory in 1998 and the Hicks of University of California in Los Angeles etc. have proposed atmospheric pressure plasma fluidics.Its plasma generator mainly adopts plate and the coaxial type electrode, and this two speciogenesis device all adopts the bare metal electrode structure, and is carrier gas doping active gases with the helium.In recent years, this novel plasma source has attracted domestic and international many scholars' attention.Though is that carrier gas adopts the radio frequency Atomospheric pressure glow discharge plasma source of metal electrode structure to have lot of advantages with the helium, because the high and on-stream helium that needs to use big flow of the price of helium itself is faced with the too high problem of running expense being generalized to this atmospheric pressure nonequilibrium plasma source in the commercial production application.One of its solution is that the cheap argon gas of employing is carrier gas, and sneaks into oxygen or nitrogen active gases, realizes producing the cold plasma source of living radical.Yet; In plasma source, use the generation of argon gas often guiding discharge wild effect and when sneaking into active gases as carrier gas with common structure; And the doping ratio of active gases is too small; The reliability that has influenced the yield of living radical in the plasma source greatly and used, thus its effect reduced.In addition; Though the form through adopting dielectric barrier discharge can obtain argon oxygen or argon-nitrogen plasma; But the plasma temperature that is produced is very high; Be not suitable for carrying out the processing on temperature-sensitivmaterial material surface, and the uniformity of the plasma that is produced reduces greatly owing to hot necking phenomenon under big electric current.A kind of plasma source structure that we propose has in the present invention realized that in argon oxygen or argon nitrogen binary gas large tracts of land evenly discharges; Not only obtained the low cold-plasma jet of plasma temperature, and its physics and chemical work window have obtained very big improving.
Summary of the invention
The purpose of this invention is to provide a kind of through stable discharging can produce large tracts of land, uniformly, the cold plasma of high concentration living radical, clean and numerous areas such as circuit board oxidation provides application technology at biological antibiotic, purification, body surface.
In order to achieve the above object, technical scheme of the present invention is: comprise two smooth surfaces and the plate shaped water-cooling metal electrode that is parallel to each other, insulation lath, quartz glass plate and an insulated enclosure shell.The plasma discharge main body comprises RF driven electrode and ground electrode; Wherein radio frequency electrode links to each other with radio-frequency power supply through adaptation; Ground electrode ground connection seals it with quartz glass in the both sides of discharge range, and sparking electrode is fixed on the electrode tip holder shell with insulating material; End at insulating material is provided with a plurality of air vent holes; This air vent hole links to each other with air induction conduit, and air induction conduit is connected with air distribution system, and this air vent hole introduces behind the gas buffer chamber gas through getting into discharge range behind the plenum duct of constructing between two electrodes.Described flat-type plasma generator; Its radio frequency electrode and ground electrode are the water-cooled metal plate electrode; This electrode surface is smooth and be parallel to each other; At the electrode surface bonding bar shaped collets of this generator neighbour gas buffer chamber, the gross thickness of these bar shaped collets is less than the spacing between two metal electrodes, and the orientation of placement is vertical with the direction of air-flow; Thereby the formation plenum duct forms plasma discharge between the bare metal electrode that is not covered by the bar shaped collets in the plenum duct downstream of this bar shaped collets structure.
Plasma generator of the present invention; Discharge spacing range between its radio frequency electrode and the ground electrode is 1～2.5 millimeter; The radio-frequency power supply operating frequency is the industrial standard frequency of 13.56MHz; The breakdown rms voltage of gas is in 500V, and this radio frequency discharge is under the open condition of atmospheric pressure, to carry out.
Plasma generator of the present invention, its air distribution system are that the gas that air supply source supplies is argon gas or helium, perhaps argon gas and oxygen, the mist of argon gas and nitrogen.During discharge, the volume ratio of logical oxygen and argon gas or nitrogen and argon gas be less than or equal to 1%.
Plasma generator of the present invention, the radio frequency electrode and the ground electrode outside are installed on the electrode tip holder shell with the insulating material sealing, and the discharge range side seals with quartz glass plate, as observation window.
Plasma generator of the present invention, said air vent hole are arranged with mode the most closely and are made and evenly distribute through the gas flow rate field in the plasma generator region of discharge.Said insulation crust material is an electrical insulating material; Electrode is that stainless steel, copper or aluminum are done.
Effect of the present invention and benefit are: in argon gas, mix under the condition of oxygen or nitrogen, form between radio frequency electrode and the ground electrode between uniform and stable plasma discharge region, port forms the large tracts of land cold-plasma jet.Plasma source proposed by the invention is simple in structure, easy operating and maintenance, and manufacturing cost is low, simultaneously because this plasma source has used argon gas greatly to reduce as its running expense of carrier gas.Also have; The density of the living radical that the said plasma generator of under the open condition of normal pressure, working produces greatly increases; Can accomplish large-area surface modification treatment work efficiently, be applied in many association areas such as biological antibiotic, purification, body surface cleaning and circuit board oxidations.
Description of drawings
Accompanying drawing 1 is the side structure cross-sectional schematic of the binary gas flat-type plasma generator that designs of the present invention.
Among Fig. 1, Fig. 2: 1 RF driven electrode; 2 top crown recirculated waters are imported and exported; 3 pole plate gaps; 4 ground electrodes; 5 bottom crown recirculated waters are imported and exported; 6 electrode tip holder shells; 7 gas buffer chambeies; 8 bottom crown water cooling chambers; 9 insulating material laths; 10 quartz glass plates; 11 air vent holes; 12 top crown water cooling chambers.
Embodiment
Be described in detail embodiment of the present invention below in conjunction with technical scheme and accompanying drawing.
Consult Fig. 1 and Fig. 2, the side structure cross-sectional schematic of the binary gas flat-type plasma generator that Fig. 1 designs for the present invention, Fig. 2 is a front section view.Said low-temperature plasma generator comprises plate shaped stainless steel metal water-cooled RF driven electrode 1, and intake-outlet 2 links to each other with the water-cooled circulator; Ground electrode 4, and the bonding thickness be the lath 9 of 1 millimeter polytetrafluoroethylene, the width of lath can be according to the actual conditions conversion; The particular location of lath is shown in accompanying drawing, and RF driven electrode 1 is connected ground electrode 4 ground connection through adaptation with radio-frequency power supply; Be provided with certain discharge interval 3 between radio frequency electrode 1 and the ground electrode 4, the scope at this interval is generally the 1-2.5 millimeter, and the discharge spacing can be adjusted through changing the installation site of electrode on electrode tip holder shell 6; End at this discharging gap connects gas buffer chamber 7; Side in this chamber is provided with a plurality of air vent holes of arranging side by side 8, links to each other with gas cylinder through air distribution system, and using gases is a helium; Argon gas, the mist of argon gas and oxygen or argon gas and nitrogen.
Claims (6)
1. normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator; It is characterized in that: comprise two smooth surfaces and the plate shaped water-cooling metal electrode that is parallel to each other; Be respectively RF driven electrode and ground electrode, an insulation lath, quartz glass plate and electrode tip holder shell; Said RF driven electrode links to each other with radio-frequency power supply through adaptation; Said ground electrode ground connection; The both sides of the plasma discharge main body that constitutes at said two metal electrodes seal it with quartz glass plate; Said RF driven electrode and said ground electrode are fixed on the electrode tip holder shell with insulating material, are provided with a plurality of air vent holes at this fixing end with insulating material, and this air vent hole links to each other with air induction conduit; Air induction conduit is connected with air distribution system, and this air vent hole introduces behind the gas buffer chamber gas through getting into discharge range behind the plenum duct of constructing between said RF driven electrode and said ground electrode; Said surface of metal electrode bonding insulation lath in this generator neighbour gas buffer chamber; The thickness of insulation lath is less than the spacing between described two metal electrodes; The orientation of placing is vertical with the direction of air-flow; Thereby form said plenum duct, be not insulated between said RF driven electrode that lath covers and said ground electrode in the plenum duct downstream of described insulation strip shaped tectonic and form plasma discharge.
2. a kind of normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator according to claim 1, it is characterized in that: the discharge spacing range between described RF driven electrode and the described ground electrode is 1～2.5 millimeter.
3. a kind of normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator according to claim 1, it is characterized in that: this air distribution system is that the gas that air supply source supplies is the mist of argon gas and oxygen.
4. a kind of normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator according to claim 1, it is characterized in that: this air distribution system is that the gas that air supply source supplies is the mist of argon gas and nitrogen.
5. a kind of normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator according to claim 1, it is characterized in that: the insulating material in the said electrode tip holder shell is Ya Keli or polytetrafluoroethylene; Described RF driven electrode and described ground electrode are for stainless steel, copper or aluminum are done.
6. a kind of normal pressure lower plate electrode radio frequency capacitive coupling argon oxygen/argon-nitrogen plasma generator according to claim 1, it is characterized in that: the material of described insulation lath is a polytetrafluoroethylene.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101807255A CN101835339B (en) | 2010-05-20 | 2010-05-20 | Panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure |
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| CN2010101807255A CN101835339B (en) | 2010-05-20 | 2010-05-20 | Panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure |
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| CN101835339A CN101835339A (en) | 2010-09-15 |
| CN101835339B true CN101835339B (en) | 2012-05-23 |
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| CN102510654A (en) * | 2011-10-18 | 2012-06-20 | 大连理工大学 | Atmospheric-pulse-modulated microwave plasma generation device |
| CN102387654A (en) * | 2011-10-29 | 2012-03-21 | 大连理工大学 | Microscale low-temperature plasma jet generating device of atmospheric pressure |
| CN102883515A (en) * | 2012-09-24 | 2013-01-16 | 西安交通大学 | Array device of atmospheric pressure flat dielectric barrier plasma jet discharge |
| CN103776818B (en) * | 2013-12-26 | 2016-06-08 | 四川大学 | Spectral detection system based on the plasma producing apparatus of glow discharge and composition |
| CN103841741B (en) * | 2014-03-12 | 2016-09-28 | 中国科学院电工研究所 | Atmospheric pressure plasma generator based on dielectric barrier discharge |
| CN105722339A (en) * | 2016-02-29 | 2016-06-29 | 江西合力泰科技有限公司 | Metal ring mounting method for biological recognition module |
| JP7114212B1 (en) * | 2020-12-07 | 2022-08-08 | 東芝三菱電機産業システム株式会社 | Active gas generator |
| CN112867219A (en) * | 2021-03-01 | 2021-05-28 | 中国空气动力研究与发展中心空天技术研究所 | Underwater pulse discharge plasma exciter and flow control method |
| CN114847334A (en) * | 2022-04-28 | 2022-08-05 | 江苏省农业科学院 | Plasma radio frequency coupling low-temperature cold sterilization equipment applied to crayfish preservation |
Citations (4)
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|---|---|---|---|---|
| US5549780A (en) * | 1990-10-23 | 1996-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for plasma processing and apparatus for plasma processing |
| JP2001314752A (en) * | 2000-05-12 | 2001-11-13 | Hokushin Ind Inc | Plasma reaction vessel and method for decomposing gas by plasma |
| CN2682773Y (en) * | 2004-03-18 | 2005-03-02 | 中国科学院微电子研究所 | Normal pressure radio frequency low temperature cold plasma discharge channel device |
| CN201414256Y (en) * | 2009-05-27 | 2010-02-24 | 中国科学院微电子研究所 | Large-area flat-plate normal-pressure radio-frequency cold plasma system |
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2010
- 2010-05-20 CN CN2010101807255A patent/CN101835339B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5549780A (en) * | 1990-10-23 | 1996-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for plasma processing and apparatus for plasma processing |
| JP2001314752A (en) * | 2000-05-12 | 2001-11-13 | Hokushin Ind Inc | Plasma reaction vessel and method for decomposing gas by plasma |
| CN2682773Y (en) * | 2004-03-18 | 2005-03-02 | 中国科学院微电子研究所 | Normal pressure radio frequency low temperature cold plasma discharge channel device |
| CN201414256Y (en) * | 2009-05-27 | 2010-02-24 | 中国科学院微电子研究所 | Large-area flat-plate normal-pressure radio-frequency cold plasma system |
Non-Patent Citations (2)
| Title |
|---|
| Han S. Uhm et al..Sterilization of bacterial endospores by an atmospheric-pressure argon plasma jet.《Applied Physics Letters》.2007,第90卷261501-1~261501-3. * |
| Jin-Pyo Lim et al..Atmospheric-pressure argon/oxygen plasma-discharge source with a stepped electrode.《Applied Physics Letters》.2007,第90卷051504-1~051504-3. * |
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