JP2003160875A - Cvd apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus which supplies active species to a film- forming space by using a separating plasma-generating space, enables multiple- faces film formation, reduces a cost of the multiple-faces film formation, and simplifies a configuration of the apparatus. <P>SOLUTION: The CVD apparatus comprises having the plasma generation space separated from the film-forming space, taking out the active species from plasma, forming the film on the substrate in the film-forming space based on the CVD reaction, and having a structure 11 consisting of an RF application electrode 12 and an earth electrode 13; arranging the plasma generation space between both electrodes 12 and 13, and the RF application electrode so as to be surrounded by the earth electrode; and forming the film simultaneously on the several substrates which oppose to the structure from each different direction, and are arranged so as to be associated with locations of the RF application electrode, the earth electrode, and the substrate. Just one high frequency power source 27 for supplying an RF electric power to the RF application electrode is installed regardless of the number of the earth electrodes or the substrates. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a CVD apparatus,
In particular, the present invention relates to a CVD apparatus having a structure in which a plasma generation space and a film formation space are separated and suitable for multi-side film formation when forming a thin film on a substrate such as a thin film transistor or an integrated circuit.

[0002]

2. Description of the Related Art Conventionally, a plasma generating space for supplying active species to a film forming space is separated from a film forming space in which a substrate is arranged and a film is formed on the surface of the substrate based on a CVD action. A CVD apparatus having such a structure (hereinafter referred to as "plasma separation type CVD apparatus") is known. In such a plasma separation type CVD apparatus, a structure for generating plasma and supplying active species in the plasma to the film forming space is provided inside the vacuum container.

[0003]

In a substrate processing apparatus utilizing plasma, it is generally required that the processing efficiency and cost be reduced. In terms of high processing efficiency, it is desirable that a plurality of substrates can be processed at the same time in the same vacuum container. Therefore, conventionally, an apparatus capable of simultaneously processing a plurality of substrates in the same vacuum chamber has been proposed (Japanese Patent Laid-Open No. 59-14633, etc.). In such an apparatus, a substrate holder is usually installed in the center of the vacuum chamber,
RF applying electrodes are installed on both sides of the substrate holder. Different high frequency power supplies are connected to the RF application electrodes. When RF power is supplied to each RF applying electrode, plasma stands between the substrate holder and each RF applying electrode. As a result, a thin film is deposited on the substrate placed on the substrate holder.

However, the above plasma CVD apparatus has the following drawbacks. First, a separate high frequency power source is required for each RF applying electrode, which increases cost. Secondly, when a plurality of high frequency power supplies are simultaneously used in one vacuum container, electromagnetic wave interference occurs. The interference of the electromagnetic waves makes the discharge unstable and causes non-uniformity of plasma. In addition, the unstable discharge causes a great obstacle to the characteristics of the film. Conventionally, in order to eliminate the interference of this electromagnetic wave, a method of adjusting the frequency and phase of the mutual power supplies has been used. However, in order to solve the interference of electromagnetic waves by such a method, a complicated device and adjustment are required, which further increases the cost.

An object of the present invention is to supply active species to the film formation space by utilizing a separate type plasma generation space.
It is an object of the present invention to provide a CVD device that enables multi-faceted film formation in the configuration of a VD device and further intends to reduce the cost when performing the multi-faceted film formation and to simplify the device configuration.

[0006]

In order to achieve the above object, a CVD apparatus according to the present invention is constructed as follows.

As a precondition, the CVD apparatus according to the present invention (corresponding to claim 1) is provided with a plasma generating space which is separated from the film forming space in which the substrate is arranged, and is activated from the plasma generated in the plasma generating space. The seed is taken out to the film formation space, and the film is formed on the substrate based on the CVD action in the film formation space. Furthermore, a structure including an RF applying electrode and a ground electrode is provided in a vacuum container, the plasma generation space is provided inside the structure, faces the structure from different directions, and the RF applying electrode, Ground electrode,
It is configured to simultaneously form films on a plurality of substrates arranged in a positional relationship of the substrates.

In the CVD apparatus according to the present invention (corresponding to claim 2), preferably, the high frequency power source for supplying high frequency power to the RF applying electrode is one regardless of the number of ground electrodes or substrates. Is characterized in that.

In the CVD apparatus according to the present invention (corresponding to claim 3), preferably, the RF applying electrode and the ground electrode are both flat, and the ground electrode is parallel to both sides of the RF applying electrode. And the substrates are arranged in parallel with each other outside each of the two ground electrodes.

The CVD apparatus according to the present invention (corresponding to claim 4) is characterized in that, in the above structure, the RF applying electrode is preferably surrounded by a ground electrode all around.

A CVD apparatus according to the present invention (corresponding to claim 5) is characterized in that, in the above structure, both the RF applying electrode and the ground electrode are spherical or polyhedral.

A CVD apparatus according to the present invention (corresponding to claim 6) is characterized in that, in the above structure, both the RF applying electrode and the ground electrode are preferably cylindrical.

In the CVD apparatus according to the present invention (corresponding to claim 7), preferably, the RF applying electrode has a structure for introducing a plasma generating gas into the plasma generating space, and the ground electrode is It is characterized by having a structure in which the active species and the film forming gas are introduced into the film forming space through different passages.

[0014]

In the CVD apparatus according to the present invention, C is formed on the surface of the substrate.
Film formation is performed by the action of VD. Only active species are taken out from the plasma in the plasma generation space into the film formation space, and the active species and the material gas (SiH ₄ etc.) are chemically reacted in the film formation space to deposit the film substance on the surface of the substrate. The plasma generation space is provided in a structure composed of an RF applying electrode located inside and a ground electrode located outside. Further, a space for generating plasma is formed between the RF applying electrode and the ground electrode. The film forming space is formed in an area outside the outer ground electrode, and the substrate is arranged in the outer area of the ground electrode so as to face the ground electrode. Required RF power is supplied to the RF application electrode. Only one high-frequency power source supplies high-frequency (RF) to the RF application electrode regardless of the number of ground electrodes or substrates, and the device can be realized with a simple configuration. Further, since it can be configured with a single high frequency power source and it is not necessary to use a plurality of high frequency power sources, the cost can be reduced. The high-frequency energy causes a discharge in the plasma generation gas introduced into the plasma generation space to generate plasma.

In the above, the forms of the RF applying electrode and the ground electrode are not particularly limited. The RF applying electrode exists in the region inside the ground electrode, plasma is generated in the space between the RF applying electrode and the ground electrode, active species are extracted from the generated plasma, and the passage is formed in the ground electrode. And is supplied to the film formation space existing in the outer region of the ground electrode. The film forming space exists outside the ground electrode, and it is possible to arrange an arbitrary number of substrates at the outer position of the ground electrode and perform the film forming process on the substrate. In this way, a structure that enables multi-sided film formation is realized. When performing multi-sided film formation,
The substrate is arranged so as to face the ground electrode, but the arrangement position can be arbitrarily determined by selecting different directions.

In a normal structure, both the RF applying electrode and the ground electrode are formed in a flat plate shape, the ground electrodes are arranged in parallel on both outsides of one RF applying electrode, and further outside of each of the two ground electrodes. The substrates to be processed are arranged in parallel. In this configuration, two substrates are targets for film formation. The structure provided as a separate type is sandwiched between the two substrates in the chamber of the plasma CVD apparatus. The RF applying electrode and the ground electrode are connected by an insulator, the portions other than the electrode are surrounded by an insulating member, and the space between the RF applying electrode and the ground electrode is kept closed except for the gas passage.

When both electrodes have a spherical shape or a polyhedral shape, the inner RF applying electrode is located in the inner space of the outer ground electrode, and the entire circumference thereof is surrounded by the ground electrode. The entire outer periphery of the ground electrode can be used as a film formation region, and a film can be deposited on the surface of a large number of substrates.

When both electrodes have a cylindrical shape, RF
The application electrode is surrounded by the ground electrode all around. As the tubular shape, for example, a cylindrical shape or a rectangular tubular shape is adopted. Both ends of the cylindrical RF applying electrode and the ground electrode are connected by an insulating member. According to this structure, a plurality of substrates to be film-formed are arranged around the outside of the cylindrical ground electrode.

In each of the above structures, the RF applying electrode has a structure for introducing the plasma generating gas into the plasma generating space, and the ground electrode introduces the active species and the film forming gas into the film forming space through different passages. It has a structure that The gas (N ₂ , H ₂ , O _2, etc.) for generating plasma in the plasma generation space formed between the RF applying electrode and the ground electrode is R
It is supplied through the gas passage formed in the ground electrode by utilizing the inside of the F applying electrode. Further, in order to create a CVD environment in the film forming space formed outside the ground electrode, holes for diffusing active species in plasma into the film forming space and material gas (SiH ₄ etc.) are supplied to the ground electrode. It has a structure for The ground electrode that supplies active species and material gas to the film formation space does not react anywhere other than the film formation space where active species and material gas react only in the film formation space to deposit a film on the substrate surface. Is configured.

[0020]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

1 and 2 show a typical embodiment of a CVD apparatus according to the present invention. FIG. 1 is a vertical sectional view showing an internal structure of a main part, and FIG. 2 is a plan view thereof. The illustration of the vacuum container itself is omitted. The inside of the vacuum container is maintained in a desired vacuum state. An illustration of an exhaust mechanism for evacuating the inside of the vacuum container is also omitted. The CVD apparatus according to this embodiment is an apparatus for performing two-sided (both-sided) film formation. The structure 11 for plasma generation has one RF application electrode 1
It is mainly composed of 2 and two ground electrodes 13. R
The F applying electrode 12 and the ground electrode 13 have a flat plate shape,
The RF application electrodes 12 are arranged so as to be sandwiched by the ground electrodes 13 from both sides and face each other so as to be parallel to each other. A side surface portion between the RF application electrode 12 and the ground electrode 13 on the front side and the side opposite to the front side, and an upper end portion and a lower end portion are connected by an insulating member 14. As a result, the RF applying electrode 12
A space 15 is formed between and each ground electrode 13. This space 15 is a plasma generation space and R which is a discharge electrode.
When high frequency power is applied to the F applying electrode 12, a discharge occurs in this space and plasma is generated (hereinafter, referred to as "discharge space 1").
5 ”). A substrate holder 16 held at a ground potential is provided in the vacuum container on the opposite side of the RF application electrode 12 of the two ground electrodes 13 located on both sides. A substrate 17 is attached to the surface of the substrate holder 16 facing the structure 11. A thin film is deposited on the surface of the substrate 17.

The flat plate-shaped RF applying electrode 12 has a constant thickness and has a gas passage 12a through which a plasma generating gas is passed.
Are formed. A plasma generation gas (N ₂ , H ₂ , O _2, etc.) used for plasma generation is supplied from the gas supply pipe 18 to the plasma generation gas passage 12a.
Further, a large number of gas blowing holes 19 are formed in the wall portion of the RF applying electrode 12 facing the ground electrode 13. The plasma generating gas, which has entered the plasma generating gas passage 12 a from the gas supply pipe 18, is introduced into the discharge space 15 through the gas blowing hole 19 as shown by an arrow 20. Further, the flat-plate ground electrode 13 has a material gas (SiH
₄ ) and the like are introduced into the film formation space 21 as indicated by the arrow 22, and a plurality of material gas passages 23 and material gas supply holes 24 and the plasma generated in the discharge space 15 are used to form active species as indicated by the arrow 25. A through hole for introducing into the space 21 is formed as the active species supply hole 26. In the ground electrode 13, the material gas passage 23 for introducing the material gas into the film forming space 21 and the active species supply hole 26 for introducing the active species into the film forming space 21 are structurally separated. Therefore, the reactive gas and the active species are to react with each other in the film formation space 21 for the first time.

In the above structure, reference numeral 27 indicates a high frequency power supply (RF). The high frequency power source 27 is connected to the RF applying electrode 12. The two ground electrodes 13 and the two substrate holders 16 are grounded. A high frequency voltage supplied from a single high frequency power source 27 is simultaneously applied between the RF application electrode 12 and each of the ground electrodes 13 on both sides thereof.

According to the above embodiment, the entire space of the vacuum container of the CVD apparatus is maintained in a required vacuum state by the exhaust mechanism (not shown). In this state, the discharge space 15
When the raw material gas is introduced into the RF applying electrode 12 and the high frequency power is supplied from the high frequency power supply 27 between the RF applying electrode 12 and the ground electrodes 13 on both sides, discharge is generated in the discharge space 15 to generate plasma. To be done. The active species contained in the plasma generated in the discharge space 15 are the ground electrode 1
3 through the active species supply hole 26 formed in
Be spread to. In addition, a material gas passage 23 and a material gas supply hole 24 that allow the material gas to pass through each of the two ground electrodes 13.
Therefore, the film formation space 21 is formed by these structures.
Material gas is introduced into. The material gas introduced into the film formation space 21 reacts with the activated species, and a film is deposited on the surface of the substrate 17 based on the CVD action.

As is apparent from the above-described embodiment, in the CVD apparatus according to this embodiment, the discharge space 15 and the film formation space 21 are separated from each other, and the discharge space 15 is connected to one flat plate-shaped RF applying electrode 12. 2 on both sides
It is realized by a structure composed of two ground electrodes 13, and a film formation space 21 can be formed in a space on the opposite side of the surface of each ground electrode 13 facing the RF application electrode 12, and two substrates in a vacuum container are formed. It became possible to perform film formation on each surface of 17 at the same time. Also, using a single high frequency power supply 27, RF
Since a high frequency can be applied between the application electrode 12 and each of the two ground electrodes 13, it is possible to reduce the manufacturing cost of the film forming apparatus.

Next, another embodiment of the present invention will be described with reference to FIGS. According to this embodiment, it is possible to perform multi-sided film formation on two or more surfaces in the CVD apparatus.
FIG. 3 is a longitudinal sectional view of a portion of a structure for plasma generation, FIG.
Is a plan view. In FIG. 3, the same elements as those described in the above embodiment are designated by the same reference numerals. In this embodiment, in the structure 31 forming a plasma generation space separated from the film formation space 30, both the RF application electrode 32 and the ground outer electrode 33 are formed to have a cylindrical shape. The RF applying electrode 32 exists in the inner space of the ground electrode 33, and the cylindrical RF applying electrode 32 and the ground electrode 33 are arranged in concentric positions as shown in FIG. The cylindrical RF application electrode 32 is surrounded by a cylindrical ground electrode 33 all around. The structure (gas passage 32a) for supplying the plasma generating gas provided inside the RF applying electrode 32 and the structure of the gas outlet hole 19 for introducing the plasma generating gas into the discharge space 34 are the same as those in the above-described embodiment. Is. Further, the structure in which the active species in the plasma in the ground electrode 33 are introduced into the film formation space and the structure in which the plasma generation gas is introduced and introduced into the discharge space 34 through the gas blowout holes 19 are the same as those in the above-described embodiment. is there. Further, both ends of the RF applying electrode 32 and the ground electrode 33 are coupled with each other by an insulating member 35, and the discharge space 34 between the RF applying electrode 32 and the ground electrode 33 is formed as a plasma generation space. RF application electrode 32 and ground electrode 3
The configuration in which a high frequency is applied by the high frequency power supply 27 between the three and the configuration in which the substrate is arranged outside the ground electrode 33 and the film forming space is created are the same as those in the above-described embodiment.
A vacuum container for forming the film formation space is not shown.
With the above structure, plasma is generated between the cylindrical RF applying electrode 32 and the surrounding ground electrode 33, and the active species and the material gas are introduced into the film forming space formed around the outside of the ground electrode 33. Multi-layer film formation is performed on a plurality of substrates.

In the CVD apparatus having the above structure, the plasma generation space separated from the film formation space is formed between the RF applying electrode 32 and the ground electrode 33, both of which have a cylindrical shape, and the film is formed around the outside of the ground electrode 33. A space, that is, a region for forming a film by the CVD action is formed. The substrate that is the target of film formation can be arranged at an arbitrary position in the space around the ground electrode 33 as shown by a broken line 36 in FIG. 4, whereby a wide film formation region can be obtained around the ground electrode 33. Therefore, it is possible to perform multi-faced film formation on a plurality of substrates.

Although the RF applying electrode 32 and the ground electrode 33 are formed in a cylindrical shape in the above embodiment, the present invention is not limited to this. It may be a tubular shape, for example, a rectangular tubular shape.

Next, still another embodiment of the present invention will be described with reference to FIG. According to this embodiment, it is possible to perform multi-sided film formation on two or more surfaces in the CVD apparatus.
FIG. 5 is a schematic vertical sectional view. In the figure, the same elements as the elements described in the above-described embodiment are designated by the same reference numerals. In this embodiment, the RF of the structure 41 that forms the plasma generation space separated from the film formation space is used.
Both the application electrode 42 and the ground electrode 43 are formed to have a spherical shape. The RF applying electrode 42 is the ground electrode 43.
The spherical RF applying electrode 42 and the ground electrode 43, which are present in the internal space of the above, are arranged in a concentric sphere configuration so that their center positions coincide with each other. As a result, the spherical RF application electrode 42 is surrounded by the spherical ground electrode 43 around the entire circumference. The structure for supplying the plasma generating gas provided inside the RF applying electrode 42 and the structure of the gas outlet hole for introducing the plasma generating gas into the plasma generating space 44 are the same as those in the above-described embodiment. In addition, the ground electrode 43
The structure for introducing the active species in the plasma inside the film forming space into the film forming space and the structure for introducing the material gas into the film forming space 45 through the gas blowing holes are the same as those in the above-described embodiment. Reference numeral 46 is a vacuum container forming a CVD apparatus, and this vacuum container 46 is also spherical. A structure in which a high frequency is applied by the high frequency power supply 27 between the RF applying electrode 42 and the ground electrode 43, the substrate is arranged outside the ground electrode 43,
The structure for forming the film formation space is the same as in the above-described embodiment. With the above configuration, the spherical RF applying electrode 4
2 and the surrounding ground electrode 43, plasma is generated, and the active species and the material gas are introduced into the film forming space formed around the outside of the ground electrode 43. The film is formed.

In the CVD apparatus having the above structure, the plasma generation space separated from the film formation space is formed between the RF application electrode 42 and the ground electrode 43, both of which have a spherical shape, and the film is formed on the outer periphery of the ground electrode 43. A space 45, that is, a region for forming a film by the CVD action is formed. The substrate that is the target of film formation can be arranged at an arbitrary position in the three-dimensional space around the outside of the ground electrode 43, and thus a large film formation region can be obtained around the ground electrode 43.
It is possible to perform multi-faced film formation on a plurality of substrates.

Although the RF applying electrode 42 and the ground electrode 43 are both spherical in the above embodiment, the present invention is not limited to this and may be, for example, a polyhedral shape.

The multi-sided film formation based on the above CVD apparatus is suitable for, for example, the moving film formation, and the film can be easily deposited on a large-area glass substrate or a roll-shaped film.

[0033]

As is apparent from the above description, the present invention has the following effects.

The present invention according to claim 1 is a CVD apparatus having a separate plasma generation space, wherein a structure comprising an RF applying electrode and a ground electrode is provided in a vacuum container, and the plasma generation space is provided inside the structure. Outside the ground electrode because the film is simultaneously formed on a plurality of substrates facing the structure from different directions and arranged in the positional relationship of the RF application electrode, the ground electrode, and the substrate. A film formation region can be formed in the substrate, and a plurality of substrates can be arranged to perform multi-faceted film formation. Further, the structure forming the electrode device portion can be realized with a simple structure, and the manufacturing cost can be reduced.

According to a second aspect of the present invention, in the above configuration, the number of high frequency power supplies for supplying high frequency power to the RF applying electrodes is one regardless of the number of ground electrodes or substrates, so the cost required for the high frequency power supplies is reduced. Therefore, the film forming cost can be reduced.

According to a third aspect of the present invention: In the above structure, the RF application electrode and the ground electrode are formed in a flat plate shape, the ground electrodes are arranged in parallel on both sides of the RF application electrode, and the RF electrodes are arranged outside the two ground electrodes. Since the substrates are arranged in parallel, film formation on two surfaces can be performed.

The present invention according to Claims 4, 5, and 6: In the above-mentioned structure, in particular, the RF applying electrode has 3
Since the electrodes are dimensionally or two-dimensionally surrounded by the ground electrode, a large film formation region can be formed outside the periphery of the ground electrode, and a plurality of substrates can be arranged to perform multi-face film formation.

The present invention according to claim 7: In the above-mentioned structure, the RF applying electrode has a structure for introducing the plasma generating gas into the plasma generating space, and the ground electrode has a passage for differentiating the active species and the film forming gas. Since it has a structure to be introduced into the film formation space in 1., it is clarified that it is a CVD apparatus having a separation type plasma generation space, and the multi-sided film formation according to the present invention is suitable for the CVD apparatus having such a configuration.

[Brief description of drawings]

FIG. 1 is a vertical sectional view schematically showing a main part of a typical embodiment of a CVD apparatus according to the present invention.

FIG. 2 is a plan view of the configuration shown in FIG.

FIG. 3 is a vertical cross-sectional view of a main part of another embodiment of the CVD apparatus according to the present invention.

FIG. 4 is a plan view of a main part of the embodiment shown in FIG.

FIG. 5 is a vertical sectional view schematically showing another embodiment of the CVD apparatus according to the present invention.

[Explanation of symbols]

11,31,41 structure 12, 32, 42 RF application electrode 13, 33, 43 Ground electrode 16 substrate holder 17 board 21 Plasma generation space 27 high frequency power supply

Claims (7)

[Claims] 1. A plasma generation space is provided separately from a film formation space in which a substrate is arranged, active species are taken out from the plasma generated in the plasma generation space into the film formation space, and a CVD action is performed in the film formation space. In a CVD apparatus configured to form a film on the substrate based on the above, a structure including an RF application electrode and a ground electrode is provided in a vacuum container, and the plasma generation space is provided inside the structure. A film-forming apparatus that simultaneously forms films on a plurality of the substrates that are opposed to each other in different directions and that are arranged in the positional relationship of the RF applying electrode, the ground electrode, and the substrate. 2. The CVD apparatus according to claim 1, wherein there is one high frequency power source for supplying high frequency power to the RF applying electrode regardless of the number of the ground electrode or the substrate. 3. The RF applying electrode and the ground electrode are both flat plates, the ground electrodes are arranged in parallel on both sides of the RF applying electrode, and the substrate is provided outside each of the two ground electrodes. The CVD apparatus according to claim 1 or 2, wherein the CVD devices are arranged in parallel. 4. The CVD apparatus according to claim 1, wherein the RF applying electrode is surrounded entirely by the ground electrode. 5. The CVD apparatus according to claim 4, wherein both the RF applying electrode and the ground electrode have a spherical shape or a polyhedral shape. 6. The CVD apparatus according to claim 4, wherein both the RF applying electrode and the ground electrode have a cylindrical shape. 7. The RF applying electrode has a structure for introducing a plasma generating gas into the plasma generating space, and the ground electrode is provided in the film forming space through the passages of the active species and the film forming gas different from each other. The CVD apparatus according to any one of claims 1 to 6, which has a structure to be introduced.