JP2006124829A - Cvd system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CVD system which secures excellent uniformity of film thicknesses, whose structure is simple, and which is inexpensive. <P>SOLUTION: The CVD system has a gas introducing section 24 which applies treatment to a substrate 11 set in a substrate installation member 25 by supplying the gas for substrate treatment into a chamber internally having the substrate installation section. The gas introducing section 24 has a plurality of pipes 1 and a pipe communicating/supporting member 4 for communicatively connecting the pipes 1 and each pipe is provided with a number of pores 2 and in addition, an opening plate (conductance plate) 17 for conductance regulation is provided to the side opposite to the gas introducing section 24 of the substrate installation member 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a CVD apparatus for forming a film on a substrate such as a semiconductor wafer, a liquid crystal substrate, or a plasma display substrate.

  The CVD apparatus activates a material gas supplied into a sealed and evacuated reaction chamber by capacitively coupled plasma or inductively coupled plasma, and the activated material gas is placed on the substrate on which the activated gas is disposed. It can be formed into a film by being deposited on.

  By the way, the deposition amount, that is, the film thickness is affected based on the amount of material gas reaching the substrate. Therefore, in order to make the film thickness uniform, it is important to deposit the material gas uniformly on the substrate, and various attempts have been made for that purpose (see Patent Document 1).

In the conventional apparatus described in Patent Document 1, gas is introduced by a shower plate 110 provided with a large number of pores, so that the amount of material deposited on the substrate is made uniform. Specifically, as shown in FIG. 18, a shower plate 110 for supplying gas into the chamber is provided. The shower plate 110 has a structure in which a passage 113 is formed between the plate 111 and the gap plate 112 thereabove and a large number of air outlets 114 are provided on the lower side thereof, and the air outlets 114 are opened in the plate 111. It is formed by a space formed between the hole 116 and a cylinder 115 having a smaller diameter than the hole 116 and inserted into the hole 116.
JP-A-11-297672

  However, according to Patent Document 1 described above, since the cylinder 115 is inserted into the hole 116 formed in the plate 111, the structure is complicated. In addition, an expensive difficult-to-cut material such as alumina is generally used as a member provided with a gas ejection hole, and when the above-described air outlet 114 is processed on a plate material such as the plate 111, the drilling process fails. Then, the damage increased, and there was a disadvantage that it became very expensive as it was remade.

  An object of the present invention is to provide an inexpensive CVD apparatus that can ensure excellent film thickness uniformity and has a simple structure.

  The CVD apparatus of the first aspect of the present invention includes a gas introduction unit that supplies a substrate processing gas to the inside of a chamber having a substrate installation unit therein and performs processing on the substrate set in the substrate installation unit. The gas introduction part includes a plurality of pipes and pipe communication / support members that communicate and support these pipes, and each pipe is provided with a number of holes, and the gas introduction part of the substrate installation part An opening plate having a large number of through-holes for conductance adjustment is provided on the opposite side.

  A CVD apparatus according to a second aspect of the present invention is the CVD apparatus according to the first aspect, wherein the substrate installation portion is provided in a region surrounded by the gas introduction portion and the opening plate.

  A CVD apparatus according to a third aspect of the present invention is the CVD apparatus according to the first or second aspect, wherein the gas introduction section is provided in two or more.

  A CVD apparatus according to a fourth aspect of the present invention is the CVD apparatus according to any one of the first to third aspects, wherein an exhaust valve is provided in a gas passage in the chamber and communicating with the gas introduction portion. Features.

  A CVD apparatus according to a fifth aspect of the present invention is the CVD apparatus according to any one of the first to fourth aspects, wherein a gas introduction part, a substrate installation part, and an aperture plate are provided in this order from the upper side in the chamber. The opening plate is formed so that the peripheral edge protrudes upward, and the opening plate is provided with a lifter that moves the opening plate up and down.

  A CVD apparatus according to a sixth aspect of the present invention is the CVD apparatus according to the fifth aspect, characterized in that the lifter is configured to move the substrate installation portion up and down as the opening plate moves up and down.

  A CVD apparatus according to a seventh aspect of the present invention is the CVD apparatus according to any one of the first to fourth aspects, wherein a gas introduction section, a substrate installation section, and an opening plate are provided in this order from the lower side in the chamber. The opening plate is formed so that the peripheral edge protrudes downward, and the opening plate is provided with an elevating member for moving the opening plate up and down.

  A CVD apparatus according to an eighth aspect of the present invention is the CVD apparatus according to the seventh aspect, characterized in that a mask that covers a part of the substrate is provided between the gas introduction unit and the substrate installation unit. .

  A CVD apparatus according to a ninth aspect of the present invention is the CVD apparatus according to any one of the fifth to eighth aspects, wherein the exhaust hole is disposed in a chamber portion opposite to the gas introduction portion of the substrate installation portion. Features.

  A CVD apparatus according to a tenth aspect of the present invention is the CVD apparatus according to the ninth aspect, characterized in that a plurality of the exhaust holes are arranged on the side opposite to the gas introduction part of the substrate installation part.

  The CVD apparatus according to an eleventh aspect of the present invention is the CVD apparatus according to the ninth aspect, wherein the exhaust holes are arranged at a plurality of positions, and the exhaust amount of each exhaust hole can be adjusted independently. Features.

  In the case of the first and second aspects of the invention, since the gas introduction part is provided with a large number of holes, the gas distribution in the vicinity of the gas introduction part can be made uniform, and the substrate installation part is covered with the aperture plate. Therefore, the gas distribution flowing in the vicinity of the substrate installation portion can be made uniform, and as a result, excellent film thickness uniformity can be ensured. Moreover, it is only necessary to make a hole in the tube, and a simple structure can be obtained. Furthermore, since the drilling target is a plurality of pipes, even if the drilling process fails, it is possible to respond by replacing the pipe. Even if expensive materials are used for the pipe, the result is that it is inexpensive. It becomes possible to do.

  According to the invention of claim 3, it is possible to supply two or more kinds of substrate processing gases into the chamber.

  In the case of the invention of claim 4, when the exhaust valve is opened, the gas introduction part and the pipe connected to the gas introduction part can be communicated with the chamber, and as a result, the gas remaining in the gas introduction part and the pipe can be removed. , It becomes possible to evacuate quickly into the chamber. As a result, the gas exhaust time in the chamber can be greatly reduced, so that the productivity of the CVD apparatus can be improved.

  In the case of the invention according to claim 5, since the opening plate is moved up and down by the lifter, the upper end of the peripheral edge of the opening plate abuts the member on the inner surface of the chamber or in the vicinity thereof at the upper limit position, and this peripheral edge is placed on the substrate. On the other hand, when the opening plate is lowered to the lower limit position, the side of the substrate installation portion can be opened.

  In the case of the invention according to claim 6, since the height of the substrate installation portion is raised and lowered with the vertical movement of the opening plate by the lifter, in the lateral position of the substrate installation portion when the opening plate is lowered to the lower limit position, By arranging means for setting and discharging the substrate to and from the substrate setting portion, it is possible to functionally set and discharge the substrate to and from the substrate setting portion whose side is open. Further, since the same mechanism performs the upper and lower sides of the aperture plate and the upper and lower sides of the substrate installation portion, the apparatus price can be kept low.

  In the case of the invention according to claim 7, since the opening plate is moved up and down by the elevating member, the lower end of the peripheral edge of the opening plate abuts the member on the inner surface of the chamber or in the vicinity thereof at the lower limit position, and this peripheral edge is the substrate. By encircling the installation portion and raising the opening plate, the side of the substrate installation portion can be opened.

  According to the invention of claim 8, the thin film formed on the lower surface side of the substrate can be formed in a desired shape corresponding to the shape of the mask.

  In the case of the invention of claim 9, since the gas introduction part, the substrate installation part, the opening plate and the exhaust hole are arranged coaxially from the upper side or the lower side in this order, the gas from the gas introduction part is It is possible to make the substrate installation part flow downward or upward rather than in the left-right direction, and it is possible to minimize the non-uniformity of the gas flow.

  According to the invention of claim 10, it is possible to use a space between adjacent exhaust holes and directly under the substrate, and a matching device for applying a bias potential to the substrate is provided in the space, for example. Can be arranged.

  According to the invention of claim 11, by adjusting the opening degree of the on-off valve provided in the exhaust pipe connected to the exhaust hole, or by adjusting the rotation speed of the exhaust pump provided in the exhaust pipe connected to the exhaust hole, It is possible to adjust the gas distribution on the substrate.

  The present invention will be specifically described below.

(First embodiment)
1 is a front sectional view showing a CVD apparatus according to the first embodiment of the present invention, FIG. 2 is a front sectional view showing a chamber portion of the CVD apparatus, and FIG. 3 is a side sectional view of FIG.

  This CVD apparatus has a chamber 14 whose inside is adjusted to a high vacuum, the top of the chamber 14 is covered with a lid 5 having a transmission window 8, and an exhaust hole 23 a for high vacuum exhaust is formed at the bottom. Is provided. A coil 13 for generating plasma is provided on the transmission window 8, and a plurality of gas introduction portions 24 in the illustrated example are provided in the chamber 14 below the transmission window 8. A substrate installation member 25 on which the rectangular substrate 11 is disposed is provided below the gas introduction unit 24, and a bias potential is applied to the substrate 11 by the matching unit 12. Plasma is generated in the chamber 14 by the high-frequency power supplied. Further, a conductance plate 17 as an opening plate is provided below the board installation member 25, and the board installation member 25 and the conductance plate 17 are moved up and down by a lifter 18. In addition, as said board | substrate 11, the thing of the said other shape of the said square, for example, circular etc., is used.

  The exhaust hole 23a is arranged below the central portion of the substrate installation member 25, and an exhaust pipe 23 is connected to the exhaust hole 23a. An on-off valve 21 is provided in the middle of the exhaust pipe 23. An exhaust pump 20 is provided below the on-off valve 21. An opening / closing lid 22 is provided on the side surface of the chamber 14, and when the opening / closing lid 22 is opened, the substrate 11 is set and discharged by the substrate setting / discharging means 15. In this embodiment, the substrate setting / discharging means 15 has an arm 15a that advances and retracts in the horizontal direction.

  As shown in FIG. 4, one (upper side) of the two gas introduction portions 24 connects a pair of pipe communication / support members 4 having gas passages therein and both ends of the pipe communication / support members 4. A connecting member 4a and a plurality of pipes connected to both ends of the pipe communication / support member 4 (five pipes 1 in the illustrated example) are provided. Both ends of each pipe 1 communicate with a gas passage in the pipe communication / support member 4 A number of holes 2 are formed in each tube 1. The gas introduction part 24 is formed of a material such as quartz or ceramics such as alumina.

  For example, the holes 2 are arranged so as to be substantially uniform with respect to the substrate 11 set on the substrate installation member 25, and the direction of the holes 2 is horizontal. However, in order to make the amount of the film formed on the substrate 11 set on the substrate installation member 25 uniform, for example, the hole 2 at a position corresponding to the center of the substrate 11 is roughly equivalent to the outer periphery of the substrate 11. The positions of the holes 2 may be densely arranged. The direction of the hole 2 is not limited to the horizontal direction. For example, when the pressure at which the process is performed is relatively high, such as 1 Pa, the gas molecules ejected from the hole 2 change their direction by colliding with other gas molecules while moving the mean free path of 6.8 mm. Because they are mixed, there is no difference in which direction they face. The process is rarely performed under conditions where the pressure is extremely low and the gas is dilute. However, when the pressure is low, when the holes 2 are directed to face the substrate 11, the distribution of the holes 2 corresponds to the film formation amount on the substrate 11. It will have a direct effect. Note that an O-ring 9a is provided at a connecting portion between the pipe 1 and the pipe communication / support member 4 (see FIG. 5). Moreover, 3 in FIG.4 and FIG.5 shows the flow of gas.

  The other (lower) gas introduction section 24 has the same configuration as the above-described one except that the number of the tubes 1 is four. However, both the gas introduction parts 24 are connected to different gas supply sources so that different gases are supplied.

  Further, as shown in FIGS. 6 and 7, the two gas introduction parts 24 are attached to the inside of the lid 5 by bolts 27 with an O-ring 9 b interposed therebetween. Note that reference numeral 9 in FIGS. 6 and 7 denotes various O-rings.

  The conductance plate 17 is formed in a plate shape, for example, a rectangular plate shape, whose peripheral edge protrudes upward using a plate material, for example, a metal plate, in which a large number of through holes are uniformly arranged. The substrate installation member 25 has protrusions 25b protruding upward from a plurality of locations on the lower base 25a, in the illustrated example, 4 locations, and the substrate is placed on the substrate installation portion 25c above the projection 25b. Placed and set. The conductance plate 17 and the board installation member 25 are moved up and down by the lifter 18 as described above.

  Two lifters 18 of the same configuration that move synchronously are arranged in parallel at the same height position, and one of the lifters 18 has a pair of parallel movements as shown in FIGS. The lower end of the link 19 is a drive shaft 16, and each link 19 is swung by a swing drive motor 16a (see FIG. 3). In the middle of each link 19, a base portion 25 a of the board installation member 25 is rotatably supported, and a conductance plate 17 is rotatably supported on the upper end of each link 19. At this time, since the support position of the conductance plate 17 is away from the drive shaft 16 with respect to the support position of the board installation member 25, the vertical change amount D1 of the conductance plate 17 is larger than the vertical change quantity D2 of the board installation member 25. Large (see FIG. 9). Specifically, when the conductance plate 17 is at the upper limit position, the upper edge of the rectangle is positioned above the substrate installation member 25 and comes into contact with the lower surfaces of the pipe communication / support member 4 and the connection member 4a, so that the substrate installation member Siege 25. On the other hand, when lowered by the lifter 18, the upper edge of the conductance plate 17 descends from the substrate placement member 25, and when lowered to the lower limit position, the lateral side of the substrate placement member 25 is opened, and the substrate setting / discharging means 15 is opened. Enables the substrate 11 to be set and discharged (see FIGS. 1 and 8). In addition, the protrusion part 25b comes in and out of the notch hole (not shown) provided in the conductance plate 17 with the vertical movement of the board | substrate installation member 25 by the lifter 18, The length of the protrusion part 25b is When the conductance plate 17 is at the lower limit position, the dimension is set such that the upper end of the protruding portion 25b is higher than the upper edge of the conductance plate 17.

  As shown in FIGS. 6 and 7, substrate processing gas from a gas supply source (not shown) is supplied into the chamber 14 through a gas supply pipe 7 provided on the side surface thereof. The gas supplied into the chamber 14 is given to one gas introduction part 24 through an exhaust valve 6 provided on the gas passage 26. The other gas introduction part 24 is also supplied with gas in the same configuration.

  The exhaust valve 6 is configured to open and close an opening 26a provided in the gas passage 26. When the exhaust valve 6 is in the closed state shown in FIG. 6, gas is supplied to the gas introduction unit 24 using the gap around the exhaust valve 6 as a gas passage. To do. On the other hand, in the open state shown in FIG. 7, the inside of the gas introduction part 24 and the inside of the gas passage 26 (including the pipe 7) can be communicated with the chamber 14, and as a result, the inside of the gas introduction part 24 and the gas passage 26 (the pipe 7). The gas remaining in the gas can be quickly exhausted into the chamber 14.

  Therefore, in the case of the CVD apparatus according to the first embodiment, the gas distribution in the vicinity of the gas introduction part 24 can be made uniform because a large number of holes 2 provided in the gas introduction part 24 are evenly arranged. Since the substrate installation portion 25c is covered with the conductance plate 17 having a large number of through holes, the gas distribution flowing in the vicinity of the substrate installation portion 25c can be made uniform.

  Here, the function of the conductance plate 17 will be described. If the conductance plate 17 is omitted from the CVD apparatus according to this embodiment, the gas flows into the exhaust hole 23a through the shortest path, and a portion with a large gas flow and a portion with a small gas flow are generated in the substrate placement portion 25c. With respect to the substrate 11 set in the portion 25c, more gas flows in the end portion than in the central portion of the substrate, and the film thickness increases. On the other hand, when the conductance plate 17 is used, it is possible to disperse a portion with a large gas flow and a portion with a small gas flow. Therefore, by reducing the density of the through holes provided in the conductance plate 17 at the portion where the gas flow is large, while increasing the density at the portion where the gas flow is small, the gas distribution flowing in the vicinity of the substrate installation portion 25c is made uniform as described above. it can. Therefore, it is not necessary to make the arrangement of the through holes uniform, and the positions of the through holes may be made non-uniform in order to make the gas distribution uniform.

  FIG. 10 is a diagram showing a gas flow line 10 that reaches the gas introduction part 24, the substrate 11, the conductance plate 17, and the exhaust hole 23a. Since each streamline 10 has substantially the same length, the variation in partial gas flow rate is small, and the length of the flow path is also small between each part, so that it is deposited on the substrate 11. High uniformity is also achieved in terms of film quality. As a result, excellent film thickness uniformity can be ensured.

  Further, in the case of the first embodiment, it is only necessary to make the hole 2 in the tube 1, the structure can be simplified, and the objects to be drilled are a plurality of tubes 1. Even if the processing fails, it is possible to cope with it by exchanging the tube. As a result, even if an expensive material is used for the tube 1, it can be made inexpensive.

  Further, when comparing the first embodiment and Patent Document 1 (Japanese Patent Laid-Open No. 11-297672: hereinafter the same) with respect to cost, the first embodiment has the following effects. In Patent Document 1, a microwave emission part as a gas activation means is provided in the upper part of the chamber, and the boundary between the microwave emission part placed in the atmosphere and the chamber is made of electrically non-conductive ceramics. However, the effect of microwave activation is the highest (the plasma density is high) and the gas is going to be released from this boundary. In Patent Document 1, the boundary is constituted by a shower plate 110 made of alumina having a diameter of 350 mm (see FIG. 18). Since one of the boundaries is atmospheric pressure and the other is vacuum, it is necessary to have strength to withstand a differential pressure corresponding to atmospheric pressure. If a safety factor 10 in strength design is ensured, the plate thickness needs to be 14 mm or more. The hole 116 for introducing the gas to be processed into the shower plate 110 needs to have a depth of 14 mm. However, a hole having a diameter of 0.5 mm cannot be formed at a depth of 14 mm, for example. The reason is that it is impossible to process, for example, 200 places on a difficult-to-cut material such as alumina with an elongated drill 28 times in diameter. Patent Document 1 can be said to be a technique for adjusting the opening area by opening a thick hole 116 having a diameter of 2.1 mm and filling the inside with a cylinder 115 having a diameter of 2 mm to obtain a hole substantially equivalent to a diameter of 0.5 mm. However, it is expensive to simply process 200 pores with a diameter of 2.1 mm and a depth of 14 mm with respect to alumina. It is estimated that 80% or more of the cost for the shower plate 110 is spent on the processing of the pores. On the other hand, in the gas introduction part of 1st Embodiment, it is the structure which makes a hole in a pipe | tube. If the strength design of the tube 1 that receives the differential pressure corresponding to the atmospheric pressure is made with alumina as the material, the safety factor as 10 and the outer diameter as 6.35 mm, the thickness may be calculated as 0.011 mm. The processing depth of the pores is calculated to be 1/1000 or less, and the processing cost is extremely low. Actually, a tube having a thickness of about 0.5 mm is used, but the processing depth of the pore is still 1/28. Since high-speed machining is possible as compared with deep hole machining, the machining time used as the basis for the cost calculation is even shorter than 1/28. Trial calculations have been made using alumina as a material, but the same applies to other materials. In the description related to Patent Document 1 so far, the boundary between the inside of the chamber and the atmosphere is configured by the shower plate 110, but the gap plate (101) and the shower plate 110 are actually arranged at the boundary. The shower plate 110 has a thickness of 20 mm. When the strength is calculated, the safety factor is 21.1. Although two gap plates (101) and a shower plate 110 are provided, it is estimated that the differential pressure between the atmospheric pressure and the vacuum is individually applied to the gap plate (101) and the shower plate 110. . In addition, for the shower plate 110, it is considered that a decrease in material strength due to a large number of holes is taken into account, and the safety factor 10 is generally doubled. Patent Document 1 and the first embodiment achieve the same object with respect to isolating the upper part of the chamber with an insulating material and introducing gas into the boundary region. There is a big difference in the cost of processing and the cost of insulating materials.

  In the first embodiment, as described above, the gas introduction part 24 is attached to the inside of the lid 5 by the bolt 27 with the O-ring 9b interposed therebetween, and between the gas introduction part 24 and the lid 5, Since it is only necessary to seal the differential pressure, it is possible to cope only with the use of the O-ring 9b, and this greatly reduces the work of attaching and removing the gas introduction part 24 during maintenance. In addition, the operation is very simple as compared with a large and heavy gas introduction section as in Patent Document 1. In cleaning parts, cleaning of narrow parts becomes a problem. In Patent Document 1, it is possible to start the cleaning operation by removing 200 sets of the cylinder 115 and the female screw (206) fitted in the hole having a diameter of 2.1 mm with the by-product generated during the process attached thereto. . On the other hand, in the first embodiment, cleaning can be performed simply by removing the tube, and it is easy to prepare a replacement tube.

  Furthermore, in the first embodiment, since different gases can be supplied to the two gas introduction portions 24, it is possible to supply two types of gases that react when mixed to the chamber.

(Second Embodiment)
FIG. 11 is a front sectional view showing a CVD apparatus according to the second embodiment of the present invention, and FIG. 12 is a plan view showing the inside of the chamber of the CVD apparatus.

  In the second embodiment, two exhaust holes 23a are disposed on the bottom surface of the chamber 14 so as to be displaced from directly below the central portion of the substrate mounting portion 25c, and the exhaust pipes 23 are connected to the respective exhaust holes 23a. In addition, an on-off valve 21 is provided in the middle of each exhaust pipe 23, and an exhaust pump 20 is provided below the on-off valve 21. That is, two systems of the exhaust hole 23a, the exhaust pipe 23, the on-off valve 21, and the exhaust pump 20 are provided. The structure of other parts is the same as that shown in FIGS.

  In the case of the second embodiment, it is possible to use the space A between the adjacent exhaust holes 23a and directly under the substrate 11, and for matching the space A, for example, to bias the substrate 11 A vessel 12 can be arranged. In addition, since two exhaust holes 23a are provided, the gas flow lines leading to the gas introduction part 24, the substrate 11, the conductance plate 17, and the exhaust hole 23a are naturally more natural than in the case where there is only one exhaust hole 23a. Shorter.

(Third embodiment)
FIG. 13 is a plan view showing a CVD apparatus according to the third embodiment of the present invention, and this CVD apparatus is equipped with four exhaust holes 23a below the four corners of the substrate installation portion 25c. Other parts are the same as those shown in FIGS.

  In the case of the third embodiment, the film thickness of a predetermined part on the substrate can be adjusted by operating the exhaust performance of the four exhaust holes 23a. For example, when the upper right portion of the substrate in FIG. 13 is thin (thick), the exhaust amount of the upper right exhaust hole 23a is increased (decreased). The increase (decrease) of the exhaust amount is performed by increasing (decreasing) the opening degree of the on-off valve 21 or increasing (decreasing) the rotational speed of the exhaust pump 20.

(Fourth embodiment)
In each of the above-described embodiments, the configuration in which the gas introduction unit is disposed above the substrate is applied. However, the present invention can be applied to the configuration in which the gas introduction unit is disposed below the substrate. .

  14 is a side sectional view showing a CVD apparatus according to a fourth embodiment of the present invention, FIG. 15 is a side sectional view showing a chamber portion of the CVD apparatus, and FIG. 16 is a substrate installation member provided in the chamber. It is explanatory drawing (perspective view), such as a mask holder. In addition, the conductance plate 33 and the gas introduction part 24 in FIG. 16 are represented typically. Further, in FIGS. 14 to 16, the same parts as those in the first embodiment are denoted by the same reference numerals.

  This CVD apparatus is configured upside down with respect to the CVD apparatus of the first embodiment, and an exhaust hole 23a for high vacuum exhaust is provided in the ceiling part of the chamber 14, and below the bottom part of the chamber 14, A coil 13 for generating plasma is provided, and a gas introduction part 24 is provided in the chamber 14 above the coil 13. A substrate installation member 30 that holds the substrate 11 is provided above the gas introduction part 24 so as to be movable up and down, and a mask holder 32 that holds the mask 31 is provided below the substrate installation member 30 so as to be movable up and down. A conductance plate 33 is provided on the upper side of the substrate installation member 30 so as to be movable up and down. And the gas introduced from the gas introduction part 24 is comprised so that it may flow toward upper direction from the downward direction in order in the board | substrate 11, the conductance plate 33, and the exhaust hole 23a.

  An opening / closing lid 22 is provided on the side surface of the chamber 14. When the opening / closing lid 22 is opened, the substrate 11 and the mask 31 are set and discharged by the arm 15 a provided in the substrate setting / discharging means (15). (See FIG. 16).

  The substrate installation member 30 can be moved up and down by, for example, a lifting cylinder 34 whose lower ends are connected to four locations. The mask holder 32 disposed on the lower side of the substrate installation member 30 can be moved up and down by, for example, a lifting cylinder 35 having lower ends connected to four locations. The conductance plate 33 has the same shape as the conductance plate 17 described above, and is disposed upside down. That is, the conductance plate 33 can be moved up and down via a cylinder 36 as a lifting member connected to the upper surface. In this lower limit position, the lower end 33a of the conductance plate 33 comes into contact with the bottom surface in the chamber 14 and is raised, so that the lower end 33a becomes higher than the opening / closing lid 22.

  The conductance plate 33 is formed with insertion holes 33b through which the cylinders 34, 35, and 36 are inserted, and the board installation member 30 is formed with insertion holes 37 through which the cylinders 35 are inserted. It has a configuration. With this configuration, the substrate installation member 30, the mask holder 32, and the conductance plate 33 can be moved up and down independently.

  Since the substrate 11 and the mask 31 are inserted from the opening / closing lid 22, the substrate installation member 30, the mask holder 32, and the conductance plate 33 are moved up and down as follows. That is, the substrate installation member 30 and the conductance plate 33 are moved above the opening / closing lid 22, and the mask 31 inserted on the arm 15 a from the opening / closing lid 22 is lifted up to scoop up the mask. The mask 31 is set on the holder 32. Thereafter, the mask holder 32 is lowered to a predetermined height. Subsequently, the substrate installation member 30 is lowered below the opening / closing lid 22, and the substrate 11 inserted on the arm 15 a from the opening / closing lid 22 is scooped up by raising the substrate installation member 30. The substrate 11 is set on the substrate 30. Thereafter, the substrate installation member 30 is lowered so that the lower surface of the substrate 11 is in contact with the upper surface of the mask 31. Subsequently, the conductance plate 33 is lowered to the lower limit position. As a result, a thin film can be formed on the lower surface of the substrate 11.

  On the other hand, after the thin film is formed, the conductance plate 33 is raised to a position where the lower end thereof is sufficiently higher than the opening / closing lid 22, the substrate installation member 30 is raised to a position slightly higher than the opening / closing lid 22, and then the arm 15 a. Is moved into the chamber 14 and the substrate installation member 30 is lowered to move the substrate 11 onto the arm 15a, and the substrate 11 is discharged from the chamber 14 by the retreat of the arm 15a. If the mask 31 is not replaced or repaired, the operation is terminated. On the other hand, when exchanging the mask 31, etc., the mask 31 is discharged by moving the mask holder 32 and the arm 15a, as in the case of the substrate installation member 30.

  Since the substrate 11 and the mask 31 are set and discharged by moving the substrate installation member 30 and the mask holder 32 in this way, the shape and dimensions of each member are regulated as follows. That is, as shown in FIG. 16, the substrate installation member 30 and the mask holder 32 are formed in a U shape so as to move up and down with respect to the arm 15a. If the width of the substrate 11 is W, the width W1 of the U-shaped opening 30a of the substrate installation member 30 is slightly shorter than the substrate width W so that the periphery of the substrate 11 can be held by the substrate installation member 30. To. Further, the width W2 of the mask 31 is made slightly shorter than the width W1 of the opening 30a so that the mask 31 passes through the U-shaped opening 30a of the substrate installation member 30. The width W3 of the U-shaped opening 32a of the mask holder 32 is slightly shorter than the mask width W2 so that the periphery of the mask 31 can be held by the mask holder 32. Further, the width W4 of the arm 15a is made shorter than the shortest W3 among the above W, W1, W2, and W3, so that the mask 31 and the substrate 11 can be scooped up from the arm 15a and moved backward. Further, as shown in FIG. 17, the mask 31 is placed on the lower side of the mask main body 31a so as to be in contact with the lower surface of the substrate 11 through the opening 30a of the substrate installation member 30. A raised member 31b having a frame shape with both a width W and a length L) is attached, and as shown in FIG. 16, the mask holder 32 has a convex portion 32b in which the periphery of the U-shaped opening 32a is raised more than other portions. Is provided. That is, the substrate installation member 30 can enter between the peripheral edge of the substrate 11 and the mask holder 32 by the thickness dimension of the raising member 31 b and the height dimension of the convex portion 32 b. The mask body 31a is provided with a large number of openings 31c vertically and horizontally.

  A bias potential is applied to the substrate 11 by a matching unit 12, and a plasma is generated in the chamber 14 by a high-frequency power supplied to the coil 13. An exhaust pipe 23 is connected to the exhaust hole 23a, and an open / close valve (not shown) is provided in the middle of the exhaust pipe 23 (see FIG. 1), and an exhaust pump (see FIG. 1) is provided above the open / close valve. Not shown). The gas introduction part 24 and the exhaust valve (not shown) are configured in the same manner as in the above-described embodiment (see FIGS. 6 and 7).

  Therefore, also in the case of the CVD apparatus according to the fourth embodiment, similarly to the first embodiment, since the holes 2 provided in the gas introduction part 24 are arranged in a large number equally, The gas distribution can be made uniform, and moreover, the gas distribution flowing in the vicinity of the substrate installation portion 25c can be made uniform because the substrate installation portion 25c is covered with the conductance plate 33 having a large number of through holes. In particular, in the case of the fourth embodiment, since the mask 31 is provided on the substrate 11, a thin film having the shape of the opening 31c opened in the mask 31 can be formed and a large number of openings can be formed. When the portion 31c is provided, a substrate corresponding to the number of the openings 31c can be produced from one substrate (mother substrate) 11 in a uniform manner. However, the number of openings 31c is selected to be 1 or an arbitrary number of 2 or more.

  Also in the fourth embodiment, the configuration of the CVD apparatus as in the second embodiment and the third embodiment may be adopted, and by doing so, the same effect as in each embodiment can be obtained.

  Further, in the first to third embodiments described above, a mask is not provided on the substrate. However, in the first to third embodiments, the mask 31 is formed on the substrate as in the fourth embodiment. Of course, it is good also as a structure provided with respect to 11. FIG. However, when applied to the first to third embodiments, a mask is disposed on the upper side of the substrate.

It is front sectional drawing which shows the CVD apparatus which concerns on 1st Embodiment of this invention (The state which raised the lifter is shown). It is front sectional drawing which shows the chamber part of the CVD apparatus of FIG. It is side surface sectional drawing which shows the chamber part of FIG. It is a top view which shows the gas introduction part with which the CVD apparatus of FIG. 1 was equipped. It is a top view (partial cross section) which shows the edge part of the gas introduction part with which the CVD apparatus of FIG. 1 was equipped. It is side surface sectional drawing (partial enlarged view) of the CVD apparatus of FIG. 1, and shows the state which closed the exhaust valve. It is side surface sectional drawing (partial enlarged view) of the CVD apparatus of FIG. 1, and shows the state which opened the exhaust valve. It is front sectional drawing which shows the CVD apparatus of FIG. 1, and shows the state which lifted the lifter. It is front sectional drawing which expands and shows the lifter part of the CVD apparatus of FIG. 1, and shows the vertical motion of a lifter. It is front sectional drawing which shows the CVD apparatus of FIG. 1, and shows the streamline of gas. It is front sectional drawing which shows the CVD apparatus which concerns on 2nd Embodiment of this invention. It is a top view which shows the inside of the chamber in the CVD apparatus of FIG. It is a top view which shows the CVD apparatus which concerns on 3rd Embodiment of this invention. It is side surface sectional drawing which shows the CVD apparatus concerning 4th Embodiment of this invention. It is side surface sectional drawing which shows the chamber part in the CVD apparatus of FIG. It is explanatory drawing (perspective view) of shapes and dimensions, such as a substrate installation member and a mask holder, in the CVD apparatus of FIG. It is a disassembled perspective view which shows the structure of the mask in the CVD apparatus of FIG. It is front sectional drawing which shows the gas introduction part of patent document 1.

Explanation of symbols

1 Pipe 2 Hole 3 Gas flow 4 Pipe communication / support member 5 Lid 6 Exhaust valve 7 Piping (gas passage)
8 Transmission window 9, 9a, 9b O-ring 10 Gas stream line 11 Substrate 12 Matching device 13 Coil 14 Chamber 16 Drive shaft 17, 33 Conductance plate (opening plate)
18 Lifter 19 Link 20 Exhaust pump 21 Open / close valve 23 Exhaust pipe 23a Exhaust hole 24 Gas introduction part 25, 30 Substrate installation member 25c Substrate installation part 26 Gas passage 31 Mask 32 Mask holder

Claims (11)

  A gas introduction unit that supplies a substrate processing gas into a chamber having a substrate installation unit therein and processes the substrate set in the substrate installation unit, the gas introduction unit including a plurality of tubes Each of the pipes has a pipe communication / support member that communicates and supports the pipes, and a plurality of holes are provided in each pipe, and a large number of conductance adjustments are performed on the side opposite to the gas introduction part of the substrate installation part. A CVD apparatus comprising an aperture plate having through holes.   2. The CVD apparatus according to claim 1, wherein the substrate installation part is provided in a region surrounded by the gas introduction part and the opening plate.   3. The CVD apparatus according to claim 1, wherein two or three or more gas introduction portions are provided. 4.   4. The CVD apparatus according to claim 1, wherein an exhaust valve is provided in a gas passage in the chamber and communicating with the gas introduction part.   5. The CVD apparatus according to claim 1, wherein a gas introduction part, a substrate installation part, and an opening plate are provided in this order from the upper side in the chamber, and the opening plate has a peripheral edge facing upward. A CVD apparatus, characterized in that it is formed so as to protrude, and a lifter is provided on the opening plate to move it up and down.   6. The CVD apparatus according to claim 5, wherein the lifter is configured to move the substrate installation portion up and down as the opening plate moves up and down.   5. The CVD apparatus according to claim 1, wherein a gas introduction part, a substrate installation part, and an opening plate are provided in this order from the lower side in the chamber, and the opening plate has a peripheral edge on the lower side. A CVD apparatus, wherein the opening plate is formed so as to protrude upward and an elevating member for moving the opening plate up and down is provided on the opening plate.   The CVD apparatus according to claim 7, wherein a mask that covers a part of the substrate is provided between the gas introduction unit and the substrate installation unit.   9. The CVD apparatus according to claim 5, wherein an exhaust hole is disposed in a chamber portion on a side opposite to the gas introduction portion of the substrate installation portion.   10. The CVD apparatus according to claim 9, wherein a plurality of the exhaust holes are arranged on a side opposite to the gas introduction part of the substrate installation part.   The CVD apparatus according to claim 9, wherein the exhaust holes are arranged at a plurality of positions, and an exhaust amount of each exhaust hole can be adjusted independently.