JP2002246423A - Tape carrier and manufacturing method therefor - Google Patents

Tape carrier and manufacturing method therefor

Info

Publication number
JP2002246423A
JP2002246423A JP2001043088A JP2001043088A JP2002246423A JP 2002246423 A JP2002246423 A JP 2002246423A JP 2001043088 A JP2001043088 A JP 2001043088A JP 2001043088 A JP2001043088 A JP 2001043088A JP 2002246423 A JP2002246423 A JP 2002246423A
Authority
JP
Japan
Prior art keywords
tape
adhesive
copper foil
tape carrier
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001043088A
Other languages
Japanese (ja)
Inventor
Kenji Yamaguchi
健司 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP2001043088A priority Critical patent/JP2002246423A/en
Publication of JP2002246423A publication Critical patent/JP2002246423A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the warp of a TAB tape carrier, due to the thermal expansion coefficients different between a copper foil and a tape base of the carrier and the influence of the viscoelasticity of adhesives. SOLUTION: A tape base 5 with adhesives 3 is provided on one side of a polyimide resin film and punched through, as specified, and a copper foil 2 is overlaid on the tape base by a roll laminator and etched to form a wiring pattern, or in addition, a solder resist is applied to manufacture a tape carrier for TABs. In this method, prior to bonding of the foil 2, the tape base 5 is left to absorb moisture in a high-humidity atmosphere at a relative humidity of 85% or higher and then the foil 2 is bonded using the roll laminator.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶用及びCSP
(Chip Scale Package)用TAB(Tape Automated Bon
ding)テープや、デバイスホール無しのCOF(Chip o
n Film)用TABテープなどのテープキャリアの構造と
その製造方法に関するものである。
The present invention relates to a liquid crystal display and a CSP.
(Chip Scale Package) TAB (Tape Automated Bon)
ding) tape or COF (Chip o) without device hole
The present invention relates to a structure of a tape carrier such as a TAB tape for n-film and a manufacturing method thereof.

【0002】[0002]

【従来の技術】一般に、TAB用テープキャリアは、例
えば本発明の実施形態に係る図1(a)と同様に、ポリ
イミド樹脂フィルムから成るテープ基材4の片面に接着
剤3を介して銅箔2を貼り合わせた3層の基本構造(接
着剤使用の片面銅貼り1層CCL)を持つ。
2. Description of the Related Art In general, a TAB tape carrier is formed, as in FIG. 1 (a) according to an embodiment of the present invention, on one side of a tape base material 4 made of a polyimide resin film via an adhesive 3 with a copper foil. 2 has a three-layer basic structure (single-sided copper-clad single-layer CCL using an adhesive).

【0003】従来、このTAB用テープキャリアは、ポ
リイミド樹脂フィルムの片面に接着剤を設けた接着剤付
きテープ基材にプレスで送り穴やデバイスホール等の所
要の打ち抜き加工をした後、これに銅箔をロールラミネ
ータで貼り合せ、接着剤をキュアした後、銅箔面を露光
・エッチングして配線パターンを形成し、この配線パタ
ーンに液状ソルダレジストを塗布することで形成してい
た。
Conventionally, this TAB tape carrier is prepared by punching a tape base with an adhesive provided with an adhesive on one side of a polyimide resin film into a perforated hole or a device hole by a press, and then adding a copper to the tape base. After bonding the foils with a roll laminator and curing the adhesive, the copper foil surface is exposed and etched to form a wiring pattern, and the wiring pattern is formed by applying a liquid solder resist.

【0004】具体的には、図9に示すように、保護フィ
ルムをリール10に巻取りつつ、巻き出しリール11か
ら接着剤付きテープ基材(接着剤付きポリイミドテー
プ)5を繰り出す。この繰り出した接着剤付きテープ基
材5をプレヒートチャンバ12に通してから、加熱装置
を内蔵していないゴムロール7と加熱装置を内蔵してい
ない鉄ロール8との対を通し、ここで銅箔リール14か
ら巻き出した銅箔(9〜35μm厚さ)と重ねてロール
ラミネートし、これを巻き取りリール13に巻き取って
いた。
More specifically, as shown in FIG. 9, a tape base material with an adhesive (a polyimide tape with an adhesive) 5 is unwound from an unwinding reel 11 while the protective film is wound around a reel 10. The unwound tape base material 5 with adhesive is passed through the preheat chamber 12 and then passed through a pair of a rubber roll 7 having no built-in heating device and an iron roll 8 having no built-in heating device. The sheet was superposed on a copper foil (thickness: 9 to 35 μm) unwound from 14 and roll-laminated.

【0005】そして、上記銅箔にフォトレジストをコー
トしてプレキュアを行い、露光、現像、ポストキュアし
た後、銅箔のエッチングを行い、回路配線パターンを形
成した後に、液状のフォトソルダレジストを塗布しある
いはエポキシ系ソルダレジストを印刷コートし、これを
露光・現像して、あるいはポストベークを行い、回路配
線パターンの配線上に絶縁保護膜層を形成していた。
[0005] The copper foil is coated with a photoresist, pre-cured, exposed, developed, and post-cured. The copper foil is etched to form a circuit wiring pattern, and then a liquid photo solder resist is applied. Or an epoxy-based solder resist is printed, exposed and developed, or post-baked to form an insulating protective film layer on the wiring of the circuit wiring pattern.

【0006】このようなTAB用テープキャリアにおい
ては、片面側のソルダレジストに起因して反りが発生す
るとの認識に立ち、その反りをなくす技術が幾つか提案
されている。例えば、特開平4−28244号公報に
は、保護用レジスト層と同材質の補正レジスト層をベー
ステープの反対面に形成することにより、熱履歴を受け
た際のベーステープにおける反り変形を防止する技術が
開示されている。また、特開平7−169793号公報
には、ポリイミド系のフィルム基材の表面における回路
パターン上に、エポキシ系樹脂のソルダーレジストを塗
布し、裏面にはエポキシ系の裏面樹脂を塗布し、こうし
てフィルム基材の両面をエポキシ系樹脂で覆うことによ
って、フィルム基材の裏面における高信頼性樹脂との密
着力を、表面における密着力と同程度に高くして、表面
加圧に対する強度を高め、反りをなくす技術が開示され
ている。
Based on the recognition that such a TAB tape carrier is warped due to the solder resist on one side, several techniques for eliminating the warp have been proposed. For example, Japanese Patent Application Laid-Open No. 4-28244 discloses that a correction resist layer made of the same material as a protective resist layer is formed on the opposite surface of a base tape to prevent the base tape from being warped when subjected to heat history. Techniques are disclosed. Japanese Patent Application Laid-Open No. 7-169793 discloses that an epoxy resin solder resist is applied on a circuit pattern on the surface of a polyimide film substrate, and an epoxy resin is applied on the back surface. By covering both sides of the substrate with epoxy resin, the adhesive strength with the highly reliable resin on the back side of the film base is increased to the same level as the adhesive strength on the front side, increasing the strength against surface pressing and warping. There is disclosed a technique for eliminating the problem.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、TAB
用テープキャリアには、絶縁性樹脂フィルムのテープ基
材とこれに貼り合わせる銅箔との間における熱膨張係数
の違いに起因しても、無視し得ない反りが発生する。
SUMMARY OF THE INVENTION However, TAB
In the tape carrier for use, warping that cannot be ignored is caused even due to a difference in thermal expansion coefficient between the tape base material of the insulating resin film and the copper foil bonded thereto.

【0008】すなわち、一般にTAB用テープキャリア
は、ポリイミド樹脂フィルムから成るテープ基材に対し
て、銅箔が9〜35μm厚さのものをラミネート・キュ
アした後、液状のフォトレジストを塗布し、所定の露光
・現像をエッチングし、銅箔の配線回路パターンを形成
している。ところが、銅箔のラミネート工程において
は、図10に示すラミネート・キュア条件の環境に晒さ
れ、接着剤付きテープ基材が相当に高いラミネート温度
まで昇温され、それから室温に戻される。このとき銅箔
に比較してポリイミドテープの銅箔ラミネート時の熱膨
張係数が小さいためと、接着剤の硬化収縮が大きいこと
に起因して、銅箔のラミネート・キュア後のTAB用テ
ープキャリアの形状が平坦ではなくなり、銅箔を内側に
して雨ドイ状に反ってしまう。そのため、18μm厚さ
の銅箔を使用しても、微細なパターン(50μmピッチ
以下)を均一にエッチングすることができず、Cu配線
がショートしたり断線したりして、製品不良となってし
まう。
That is, in general, a TAB tape carrier is prepared by laminating and curing a tape base made of a polyimide resin film with a copper foil having a thickness of 9 to 35 μm, and then applying a liquid photoresist to the tape base. Is exposed and developed to form a wiring circuit pattern of copper foil. However, in the copper foil laminating step, the tape substrate with the adhesive is exposed to an environment under the laminating and curing conditions shown in FIG. 10, and is heated to a considerably high laminating temperature and then returned to room temperature. At this time, the thermal expansion coefficient of the polyimide tape during lamination of the copper foil is smaller than that of the copper foil, and the curing shrinkage of the adhesive is large. The shape is not flat, and it warps like a rain doi with the copper foil inside. For this reason, even when a copper foil having a thickness of 18 μm is used, a fine pattern (50 μm pitch or less) cannot be uniformly etched, and the Cu wiring is short-circuited or disconnected, resulting in a product defect. .

【0009】さらに、CSP・BGA用のTAB用テー
プキャリアの場合、テープ反りが大きく実装の生産性が
悪い。
Further, in the case of a TAB tape carrier for CSP / BGA, tape warpage is large and mounting productivity is poor.

【0010】そこで、本発明の目的は、上記課題を解決
し、TAB用テープキャリアの銅箔とテープ基材の熱膨
張係数の違いと接着剤の粘弾性の影響に起因する反りを
減少させるテープキャリアの構造とその製造方法を提供
することにある。
Accordingly, an object of the present invention is to solve the above-mentioned problems, and to reduce the warpage caused by the difference in the coefficient of thermal expansion between the copper foil of the TAB tape carrier and the tape substrate and the viscoelasticity of the adhesive. An object of the present invention is to provide a structure of a carrier and a manufacturing method thereof.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、次のように構成したものである。
Means for Solving the Problems In order to achieve the above object, the present invention is configured as follows.

【0012】(1)本発明に係るテープキャリアは、樹
脂フィルムの片面に接着剤を設けた接着剤付きテープ基
材に銅箔をロールラミネータで貼り合せ、その銅箔に線
パターンを形成し、又は更にその配線パターン上をソル
ダレジスト膜で保護したTAB用テープキャリアにおい
て、前記接着剤付きテープ基材が、前記銅箔の貼り合せ
に先立ち、相対湿度が85%以上の高湿度雰囲気中で吸
湿された接着剤付きテープ基材から成ることを特徴とす
る(請求項1)。前記樹脂フィルムは例えばポリイミド
樹脂フィルムから成る(請求項2)。
(1) A tape carrier according to the present invention comprises a tape base with an adhesive provided on one side of a resin film, a copper foil bonded to a tape base with a roll laminator, and a line pattern formed on the copper foil. Alternatively, in a TAB tape carrier in which the wiring pattern is protected by a solder resist film, the adhesive-backed tape base material absorbs moisture in a high humidity atmosphere having a relative humidity of 85% or more prior to bonding of the copper foil. It is characterized by comprising a tape base material provided with an adhesive (claim 1). The resin film is made of, for example, a polyimide resin film (claim 2).

【0013】(2)本発明に係るテープキャリアの製造
方法は、ポリイミド樹脂フィルムの片面に接着剤を設け
た接着剤付きテープ基材に所要の打ち抜き加工をした
後、これに銅箔をロールラミネータで貼り合せ、接着剤
をキュアした後、銅箔面を露光・エッチングして配線パ
ターンを形成し、又は更にその配線パターンにソルダレ
ジストを塗布するTAB用テープキャリアの製造方法に
おいて、前記銅箔の貼り合せに先立ち、前記接着剤付き
テープ基材を相対湿度が85%以上の高湿度雰囲気中で
吸湿させ、その後、前記銅箔をロールラミネータで貼り
合せることを特徴とする(請求項3)。ここで前記樹脂
フィルムは例えばポリイミド樹脂フィルムである(請求
項4)。
(2) The method of manufacturing a tape carrier according to the present invention comprises the steps of: punching a tape substrate with an adhesive in which an adhesive is provided on one side of a polyimide resin film; After the adhesive is cured, the copper foil surface is exposed and etched to form a wiring pattern, or a method of manufacturing a TAB tape carrier in which a solder resist is further applied to the wiring pattern. Prior to bonding, the adhesive-backed tape base material is absorbed in a high-humidity atmosphere having a relative humidity of 85% or more, and then the copper foil is bonded by a roll laminator (claim 3). Here, the resin film is, for example, a polyimide resin film (claim 4).

【0014】本発明のテープキャリアの製造方法におい
ては、前記配線パターンに直接に、Sn、Ni、Au等
のめっきを施し(請求項5)、又は前記配線パターンに
液状ソルダレジストを塗布して硬化処理を施した後、そ
のソルダレジスト膜から露出している配線パターン部分
に、Sn、Ni、Au等のめっきを施すとよい(請求項
6)。または、前記配線パターン上に無電解めっきもし
くは電気めっきを施し、又は更にソルダレジストを塗布
して硬化処理を施すようにしてもよい(請求項7)。
In the method of manufacturing a tape carrier according to the present invention, the wiring pattern is plated directly with Sn, Ni, Au or the like (claim 5), or a liquid solder resist is applied to the wiring pattern and cured. After the processing, the wiring pattern portion exposed from the solder resist film may be plated with Sn, Ni, Au or the like (claim 6). Alternatively, electroless plating or electroplating may be performed on the wiring pattern, or a solder resist may be further applied to perform a hardening process (claim 7).

【0015】<発明の要点>上述したように、従来で
は、ポリイミドテープの銅箔ラミネート時の熱膨張係数
が小さいためと、特に耐熱性の接着剤の粘弾性の影響と
で、TABテープの形状が平坦ではなくなり、銅箔を内
側にして雨ドイ状に反ってしまって平坦性が悪い。その
ため微細なパターン(50μmピッチ以下)を均一にす
ることができず、断線とショートと寸法公差はずれ等で
製品不良となってしまい、50μm配線ピッチ以下で
は、TABテープの生産性が悪い。そこで本発明は、反
りの小さいTABテープを得られるようにして、これら
を改善するものである。
<Summary of the Invention> As described above, in the prior art, the shape of a TAB tape is affected by the low coefficient of thermal expansion of a polyimide tape when laminating a copper foil, and particularly by the effect of the viscoelasticity of a heat-resistant adhesive. Is not flat, and warps like a rain doi with the copper foil inside, resulting in poor flatness. Therefore, a fine pattern (pitch of 50 μm or less) cannot be made uniform, resulting in a product failure due to disconnection, short-circuit, and deviation of dimensional tolerance, and the like. Accordingly, the present invention is to improve these by making it possible to obtain a TAB tape with small warpage.

【0016】すなわち、本発明の要点は、上記した従来
の問題を解決するため、銅箔をラミネートする前にポリ
イミドテープを吸湿膨張させ後に銅箔をラミネートする
ことにより、ラミネート温度から室温に戻る際の接着剤
と銅箔の熱膨張差を小さくし、これによりTAB用テー
プキャリアの形状の平坦性を向上させるものである。
That is, the main point of the present invention is to solve the above-mentioned conventional problems by allowing the polyimide tape to absorb and expand before laminating the copper foil and then laminating the copper foil to return from the laminating temperature to room temperature. The thermal expansion difference between the adhesive and the copper foil is reduced, thereby improving the flatness of the shape of the TAB tape carrier.

【0017】テープ基材に厚さ50μmのポリイミド樹
脂フィルムを用い、このテープ基材の片面に接着剤を塗
布して得た接着剤付きテープ基材(接着剤付きポリイミ
ド基材)を用いた場合を例にすると、次のようになる。
In the case of using a polyimide resin film having a thickness of 50 μm as a tape base material and using a tape base material with an adhesive obtained by applying an adhesive to one surface of the tape base material (polyimide base material with an adhesive) Is as follows.

【0018】(1)接着剤付きポリイミド基材(50μ
m厚さ)を吸湿させた後、この接着剤付きポリイミド基
材に銅箔を貼り合せ・キュアした場合、次の理由によ
り、その後のテープの反りが減少され平坦になる。
(1) Polyimide substrate with adhesive (50 μm)
When the copper foil is bonded and cured to the polyimide substrate with the adhesive after absorbing the moisture (m thickness), the warpage of the subsequent tape is reduced and flattened for the following reason.

【0019】すなわち、上記ポリイミド樹脂フィルム
(50μm厚さ)の熱膨張係数は、50℃〜200℃ま
でが16ppm/℃で、またその吸湿膨張係数は13p
pm/%RH(相対湿度)である。図2の曲線Aは、厚
さ50μmのポリイミド樹脂として宇部興産株式会社製
の商品名「ユーピレックスS」の片面に接着剤を塗布し
て得た接着剤付きポリイミド基材の場合について、その
湿度に対する寸法変化率を示したもので、その吸湿膨張
係数は18.9ppm/%RH(相対湿度)である。
That is, the polyimide resin film (50 μm thick) has a thermal expansion coefficient of 16 ppm / ° C. from 50 ° C. to 200 ° C. and a moisture expansion coefficient of 13 p.
pm /% RH (relative humidity). Curve A in FIG. 2 shows the case of a polyimide substrate with an adhesive obtained by applying an adhesive to one side of a product name “UPILEX S” manufactured by Ube Industries, Ltd. as a polyimide resin having a thickness of 50 μm. It shows the dimensional change rate, and its coefficient of hygroscopic expansion is 18.9 ppm /% RH (relative humidity).

【0020】一方、銅箔の熱膨張係数は、50℃〜20
0℃までが16ppm/℃であり、また接着剤の熱膨張
係数は、110ppm/℃である。
On the other hand, the coefficient of thermal expansion of the copper foil is 50 ° C. to 20 ° C.
The temperature up to 0 ° C. is 16 ppm / ° C., and the thermal expansion coefficient of the adhesive is 110 ppm / ° C.

【0021】そこで、接着剤付きポリイミド基材の50
μm厚さを吸湿させて膨張させ、ラミネート温度約13
0℃で貼り合わせた後の室温までの熱による収縮量を小
さくすると、銅箔と接着剤付きポリイミド基材の貼り合
せ後・キュア後のテープの反りを減少させ、平坦にする
ことができる。
Therefore, 50% of the polyimide substrate with the adhesive is used.
μm thickness to expand by absorbing moisture, lamination temperature about 13
By reducing the amount of heat shrinkage to room temperature after bonding at 0 ° C., the warpage of the tape after bonding and curing the copper foil and the polyimide base material with the adhesive can be reduced and the tape can be flattened.

【0022】(2)上記のラミネート・キュアする銅箔
としては、例えば電解あるいは圧延箔で厚さ3〜35μ
mのものを用いる。この銅箔は入手可能で粗化面あらさ
を制御した電解あるいは圧延箔を用いれば良い。
(2) The copper foil to be laminated and cured is, for example, an electrolytic or rolled foil having a thickness of 3 to 35 μm.
m. This copper foil may be an electrolytic or rolled foil which is available and whose roughness is controlled.

【0023】[0023]

【発明の実施の形態】以下、本発明を図示の実施形態に
基づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the illustrated embodiment.

【0024】図1は本発明のTAB用テープキャリアの
構造とその製造方法を示したものである。
FIG. 1 shows the structure of a TAB tape carrier of the present invention and a method of manufacturing the same.

【0025】図1(a)に示すように、このTAB用テ
ープキャリア1は、ポリイミド樹脂フィルムから成るテ
ープ基材4の片面に接着剤3を設けて成る接着剤付きテ
ープ基材5に、接着剤3を介して銅箔2を貼り合わせた
3層の基本構造(接着剤使用の片面銅貼り1層CCL)
を持つ。構造上、従来と異なる点は、接着剤付きテープ
基材5が、上記銅箔2の貼り合せに先立ち、相対湿度8
5%以上の雰囲気中で吸湿された接着剤付きテープ基材
から成ることにある。
As shown in FIG. 1 (a), this TAB tape carrier 1 is bonded to a tape base material 5 having an adhesive by providing an adhesive 3 on one side of a tape base material 4 made of a polyimide resin film. Basic structure of three layers where copper foil 2 is bonded via agent 3 (single-sided copper bonded single layer CCL using adhesive)
have. The structure differs from the conventional one in that the tape base material 5 with the adhesive is placed at a relative humidity of 8 before bonding the copper foil 2.
It consists of a tape base material with an adhesive absorbed in an atmosphere of 5% or more.

【0026】このTAB用テープキャリアの製造方法
を、図1(b1)〜(b5)に示す。
FIGS. 1 (b1) to 1 (b5) show a method of manufacturing this TAB tape carrier.

【0027】図1(b1)に示すように、まず、ポリイ
ミド樹脂フィルムから成るテープ基材4の片面に接着剤
3を設けた接着剤付きテープ基材5を用意する。そし
て、この接着剤付きテープ基材5にプレスで送り穴や、
ビアホールや、デバイスホール等の所要の打ち抜き加工
をする(図1(b2))。
As shown in FIG. 1 (b1), first, a tape base material 5 with an adhesive in which an adhesive 3 is provided on one surface of a tape base material 4 made of a polyimide resin film is prepared. Then, a perforated hole is formed in the tape base material 5 with the adhesive by pressing,
Necessary punching processing of via holes, device holes, and the like is performed (FIG. 1B2).

【0028】次に、銅箔2を貼り合せるに先立ち、接着
剤付きテープ基材5を85%湿度雰囲気又は95%湿度
雰囲気のような高温高湿度雰囲気中で吸湿させ膨張させ
る(図1(b3))。
Next, prior to bonding the copper foil 2, the tape substrate 5 with the adhesive is expanded by absorbing moisture in a high temperature and high humidity atmosphere such as an 85% humidity atmosphere or a 95% humidity atmosphere (FIG. 1 (b3)). )).

【0029】その後、これに銅箔2をロールラミネータ
で貼り合せる(図1(b4))。すなわち、図5に示す
ように、ロールラミネータ中の従来の加熱装置を内蔵し
ていないゴムロール9と加熱装置を内蔵していない鉄ロ
ール8との対の代わりに、加熱装置15を内蔵した鉄ロ
ール6と加熱装置15を内蔵したゴムロール9の対を配
設し、ポリイミド樹脂フィルムから成るテープ基材4を
加熱しながら銅箔2をラミネート・キュアする。この間
の過程で、接着剤もキュアされる。
Thereafter, the copper foil 2 is bonded to this with a roll laminator (FIG. 1 (b4)). That is, as shown in FIG. 5, instead of a pair of a rubber roll 9 in a roll laminator which does not incorporate a conventional heating device and an iron roll 8 which does not incorporate a heating device, an iron roll in which a heating device 15 is incorporated. A pair of a rubber roll 9 having a built-in 6 and a heating device 15 is provided, and the copper foil 2 is laminated and cured while heating the tape base 4 made of a polyimide resin film. During this process, the adhesive is also cured.

【0030】なお、この実施形態では、鉄ロールとゴム
ロールを両方加熱する方式としているが、鉄ロールとゴ
ムロールのうちポリイミドテープに接するゴムロールの
みを加熱する方式とすることもできる。すなわち、上記
鉄ロール6とゴムロール9の対は、その双方が加熱装置
15を内蔵している必要はなく、例えば図6に示すよう
に、加熱装置15を内蔵したゴムロール9と加熱装置1
5を内蔵していない鉄ロール8の対を用いることができ
る。
In this embodiment, both the iron roll and the rubber roll are heated. However, it is also possible to heat only the rubber roll in contact with the polyimide tape among the iron roll and the rubber roll. That is, the pair of the iron roll 6 and the rubber roll 9 need not include the heating device 15 in both, and for example, as shown in FIG.
A pair of iron rolls 8 without a built-in 5 can be used.

【0031】次に、上記銅箔2の銅箔面を露光・エッチ
ングして配線パターンを形成し、又は更にこの配線パタ
ーンに液状ソルダレジストを塗布し、製品としてのTA
B用テープキャリアを完成させる。
Next, a copper foil surface of the copper foil 2 is exposed and etched to form a wiring pattern, or a liquid solder resist is further applied to the wiring pattern to form a product TA.
Complete the tape carrier for B.

【0032】図3に、BGA(Ball Grid Array )用T
AB用テープキャリア21の配線パターン(銅箔信号層
パターン)20を示す。図4はその一部の断面図で、テ
ープ基材4に設けられたはんだボール用ビアホール17
と、その真上にこれを塞ぐ形で設けられたはんだボール
用パッド20aとが示されている。そして、このTAB
用テープキャリアの場合には、図7の如く配線パターン
20にNi/Auめっき18が施される。しかし、配線
パターン20に液状ソルダレジスト16を塗布して硬化
処理を施した後、そのソルダレジスト膜から露出してい
る配線パターン部分(はんだボール用パッド20a等)
にのみ、Sn、Ni、Au等のめっきを施すこともでき
る。
FIG. 3 shows a T for BGA (Ball Grid Array).
1 shows a wiring pattern (copper foil signal layer pattern) 20 of an AB tape carrier 21. FIG. 4 is a cross-sectional view of a part of the via hole 17 for a solder ball provided in the tape base 4.
And a solder ball pad 20a provided directly above the solder ball pad so as to close it. And this TAB
In the case of a tape carrier, the wiring pattern 20 is plated with Ni / Au 18 as shown in FIG. However, after applying the liquid solder resist 16 to the wiring pattern 20 and performing a hardening treatment, the wiring pattern portion exposed from the solder resist film (eg, the solder ball pad 20a).
Can be plated with Sn, Ni, Au, or the like.

【0033】[0033]

【実施例】<実施例1>図7に本発明の第1の実施例に
係るTAB用テープキャリアとこれを用いた半導体装置
を示す。
<Embodiment 1> FIG. 7 shows a TAB tape carrier according to a first embodiment of the present invention and a semiconductor device using the same.

【0034】テープ基材4として、厚さ50μm、幅7
0mmのポリイミド樹脂フィルム、ここでは宇部興産株式
会社製の商品名「ユーピレックスS」を用い、このテー
プ基材4にエポキシ系接着剤3として巴川製紙所製接着
剤の商品名「巴川SP」を塗布することにより、接着剤
付きテープ基材を得た。
The tape substrate 4 has a thickness of 50 μm and a width of 7
Using a 0 mm polyimide resin film, here "UPILEX S" (trade name, manufactured by Ube Industries, Ltd.), and coating the tape base 4 with an adhesive (trade name, "Hawakawa SP", manufactured by Hamakawa Paper Mills) as an epoxy adhesive 3 Thereby, a tape base material with an adhesive was obtained.

【0035】このエポキシ系接着剤を貼り合わせたポリ
イミドテープ(接着剤付きテープ基材)を、パンチング
して、送り穴(パーフォレーション)とCSP・BGA
のはんだボールを形成するためのポリイミドビアホール
(はんだボール用ビアホール17)(300μm直径)
を144穴打ち抜きした。その後、85℃×湿度95%
RHの中でポリイミドテープを吸湿膨張させた後に、三
井金属鉱業製のFQ−VLP箔銅箔(厚さ箔18μm)
テープをラミネート・キュアし、次に、フォトアプリケ
ーションで銅箔面を露光・エッチングして、銅箔信号層
の配線パターン20(50μmピッチ)を形成した。
The polyimide tape (tape substrate with adhesive) to which the epoxy adhesive is adhered is punched to form a perforation and a CSP / BGA.
Via holes for forming solder balls (via holes 17 for solder balls) (300 μm diameter)
Was punched out with 144 holes. After that, 85 ° C x 95% humidity
After moisture absorption and expansion of the polyimide tape in RH, FQ-VLP foil copper foil (thickness foil 18 μm) manufactured by Mitsui Kinzoku Mining
The tape was laminated and cured, and then the copper foil surface was exposed and etched using a photo application to form a wiring pattern 20 (50 μm pitch) of the copper foil signal layer.

【0036】次に、配線パターン20に液状ソルダレジ
スト16を塗布し、ソルダレジストの硬化処理を施した
後、そのソルダレジスト塗布層(ソルダレジスト膜)か
ら露出している配線パターン部分(銅配線が露出してい
る領域)に、NiとAuの電気めっき(Ni/Auめっ
き18)を1.0μmと0.4μm厚さに施して、TA
B用テープキャリアの完成品とした。しかし、ソルダレ
ジスト16を塗布しない構成とすることもできる。
Next, after applying a liquid solder resist 16 to the wiring pattern 20 and subjecting the solder resist to a hardening treatment, the wiring pattern portion (the copper wiring is exposed) from the solder resist coating layer (solder resist film) is applied. (Exposed area) is electroplated with Ni and Au (Ni / Au plating 18) to a thickness of 1.0 μm and 0.4 μm, and TA
This was a completed tape carrier for B. However, a configuration in which the solder resist 16 is not applied may be adopted.

【0037】比較のため、従来品として、上記の組み合
わせで、厚さ50μm、幅70mmのポリイミド樹脂フィ
ルムから成るテープ基材4に、上記エポキシ系接着剤3
を貼り合わせて接着剤付きテープ基材とし、これを吸湿
させないで、三井金属鉱業製のFQ−VLP箔銅箔厚さ
箔18μmテープから成る銅箔2をラミネート・キュア
した後、次にフォトアプリケーションで配線パターン2
0(50μmピッチ)を形成したものを作成した。
For comparison, as a conventional product, a tape base 4 made of a polyimide resin film having a thickness of 50 μm and a width of 70 mm in the above-described combination was applied to the epoxy adhesive 3
To form a tape substrate with an adhesive, without laminating and curing a copper foil 2 made of Mitsui Kinzoku Mining Co., Ltd. FQ-VLP foil copper foil thick foil 18 μm tape and then photo application Wiring pattern 2
A pattern having 0 (50 μm pitch) was prepared.

【0038】その結果、本発明によりポリイミドテープ
を吸湿膨張させ調整したテープキャリアのものが、テー
プ反りが1/2以下と小さくなり、断線、ショートが少
なく、フォトレジストの搬送中の接触によるレジスト面
の擦れも減少し、歩留が向上した。
As a result, the tape carrier prepared by absorbing and expanding the polyimide tape according to the present invention by moisture absorption and expansion has a tape warpage of less than 1/2, less disconnection and short-circuit, and a resist surface caused by contact during the transfer of the photoresist. Rub was also reduced, and the yield was improved.

【0039】次に、上記TAB用テープキャリアを用い
て図7の如く半導体装置パッケージを組み立てた。ま
ず、TAB用テープキャリアのめっきパターンに、半導
体素子(半導体チップ)24をダイアタッチ剤26で固
定した後、半導体素子24の素子電極と配線パターン2
0の銅配線が露出しているパッド領域(Ni/Auめっ
き18)とを金ワイヤ22にてワイヤボンディングし、
TABテープの配線パターン20と接続した。
Next, using the TAB tape carrier, a semiconductor device package was assembled as shown in FIG. First, the semiconductor element (semiconductor chip) 24 is fixed to the plating pattern of the TAB tape carrier with the die attach agent 26, and then the element electrode of the semiconductor element 24 and the wiring pattern 2 are fixed.
0 is wire-bonded to the pad region (Ni / Au plating 18) where the copper wiring of No. 0 is exposed by the gold wire 22;
It was connected to the wiring pattern 20 of the TAB tape.

【0040】次に、半導体素子24側の片面をトランス
ファーモールド樹脂28にてトランスファーモールド
し、キュア後、はんだボール用ビアホール17にはんだ
ボール31を搭載して完成品とした。
Next, one surface on the side of the semiconductor element 24 was transfer-molded with a transfer molding resin 28, and after curing, a solder ball 31 was mounted in the via hole 17 for a solder ball to obtain a finished product.

【0041】その際、本発明の構造と製造方法によるテ
ープキャリアのものが、反りによる搬送のトラブルとテ
ープ反りに起因する半導体素子の割れもなく、片面をト
ランスファーモールドすることによる樹脂漏れ(テープ
反りに起因する歪み)も少なく、良好な組み立てができ
た。
At this time, the tape carrier of the structure and the manufacturing method of the present invention has no trouble in transport due to warpage and no cracking of the semiconductor element due to the warpage of the tape, and has a resin leakage (transfer of the tape due to transfer molding on one side). ), Resulting in good assembly.

【0042】<実施例2>図8に本発明の第2の実施例
に係るTAB用テープキャリアとこれを用いた半導体装
置を示す。
<Embodiment 2> FIG. 8 shows a TAB tape carrier according to a second embodiment of the present invention and a semiconductor device using the same.

【0043】テープ基材4として、厚さ50μm、幅3
5mmのポリイミド樹脂フィルムである宇部興産株式会社
製の商品名「ユーピレックスS」を用い、このテープ基
材4にエポキシ系接着剤3として巴川製紙所製接着剤の
商品名「巴川SP」を塗布することにより、接着剤付き
テープ基材を得た。
As the tape substrate 4, a thickness of 50 μm and a width of 3
Using a 5 mm polyimide resin film "UPILEX S" (trade name, manufactured by Ube Industries, Ltd.), this tape base material 4 is coated with an epoxy-based adhesive 3 (trade name, "Hawakawa SP", an adhesive manufactured by Tomagawa Paper Mill). Thereby, a tape base material with an adhesive was obtained.

【0044】このエポキシ系接着剤を貼り合わせたポリ
イミドテープ(接着剤付きテープ基材)を、パンチング
して、送り穴(パーフォレーション)と、デバイスホー
ル32と、CSP・BGAのはんだボールを形成するた
めのポリイミドビアホール(はんだボール用ビアホール
17)(300μm直径)の144穴を打ち抜きした。
その後、85℃×湿度85%RHの中でポリイミドテー
プを吸湿膨張させた後に、三井金属鉱業製のFQ−VL
P箔銅箔(厚さ箔18μm)テープをラミネート・キュ
アし、次に、フォトアプリケーションで銅箔面を露光・
エッチングして、銅箔信号層の配線パターン20(50
μmピッチ)を形成した。
The polyimide tape (tape substrate with adhesive) to which the epoxy adhesive is bonded is punched to form a perforation, a device hole 32, and a CSP / BGA solder ball. 144 holes of the polyimide via hole (solder ball via hole 17) (300 μm diameter) were punched out.
After that, the polyimide tape is subjected to moisture absorption expansion in 85 ° C. × 85% RH, and then FQ-VL manufactured by Mitsui Kinzoku Mining.
Laminate and cure P foil copper foil (thickness foil 18μm) tape, then expose the copper foil surface by photo application.
After etching, the wiring pattern 20 (50
μm pitch).

【0045】次に、配線パターン20上に全面に無電解
Snめっき19を0.4μm厚さ施し、その後に液状ソ
ルダレジスト16を塗布して、TAB用テープキャリア
1の完成品とした。
Next, electroless Sn plating 19 was applied to the entire surface of the wiring pattern 20 to a thickness of 0.4 μm, and then a liquid solder resist 16 was applied to obtain a completed TAB tape carrier 1.

【0046】比較のため、従来品として、上記の組み合
わせで、厚さ50μm、幅35mmのポリイミド樹脂フィ
ルムから成るテープ基材4に、上記エポキシ系接着剤3
を貼り合わせて接着剤付きテープ基材とし、これを吸湿
させないで、三井金属鉱業製のFQ−VLP箔銅箔厚さ
箔18μmテープから成る銅箔2をラミネート・キュア
した後、次にフォトアプリケーションでインナリード2
5を含む配線パターン20(50μmピッチ)を形成し
たものを作成した。
For comparison, as a conventional product, a tape base 4 made of a polyimide resin film having a thickness of 50 μm and a width of 35 mm in the above-mentioned combination was attached to the epoxy adhesive 3
To form a tape substrate with an adhesive, without laminating and curing a copper foil 2 made of Mitsui Kinzoku Mining Co., Ltd. FQ-VLP foil copper foil thick foil 18 μm tape and then photo application In inner lead 2
A wiring pattern 20 (pitch: 50 μm) including No. 5 was formed.

【0047】その結果、本発明によりポリイミドテープ
を吸湿膨張させ調整したテープキャリアのものが、テー
プ反りが1/2以下と小さくなり、断線、ショートが少
なく、フォトレジストの搬送中の接触によるレジスト面
の擦れも減少し、歩留が向上した。
As a result, the tape carrier prepared by absorbing and expanding the polyimide tape according to the present invention by moisture absorption and expansion has a smaller tape warpage of less than 2, less disconnection and short-circuit, and a resist surface caused by contact during the transfer of the photoresist. Rub was also reduced, and the yield was improved.

【0048】次に、上記TAB用テープキャリアを用い
て図8の如く半導体装置パッケージを組み立てた。
Next, using the TAB tape carrier, a semiconductor device package was assembled as shown in FIG.

【0049】まず、TAB用テープキャリア1上のデバ
イスホール6の箇所に半導体素子24を設け、その突き
出し電極(Auのバンプ電極23)をインナリード25
のめっきパターンとフリップチップ・インナリードボン
ディング(フリップチップ接合)してTABテープの配
線パターン20と接続した。
First, a semiconductor element 24 is provided at the position of the device hole 6 on the TAB tape carrier 1, and the protruding electrode (Au bump electrode 23) is connected to the inner lead 25.
And a flip chip / inner lead bonding (flip chip bonding) to connect to the wiring pattern 20 of the TAB tape.

【0050】次に、この接続部を封止樹脂27で封止し
た後、接着剤30を介してスティフナ29を設け、はん
だボール31を搭載して、半導体装置パッケージの完成
品とした。
Next, after this connection portion was sealed with a sealing resin 27, a stiffener 29 was provided via an adhesive 30, and a solder ball 31 was mounted thereon to obtain a completed semiconductor device package.

【0051】その際、本発明の構造と製造方法によるテ
ープキャリアのものが、反りによる搬送のトラブルとテ
ープ反りに起因する半導体素子の割れもなく、片面をト
ランスファーモールドすることによる樹脂漏れ(テープ
反りに起因する歪み)も少なく、良好な組み立てができ
た。
At this time, the tape carrier of the structure and the manufacturing method of the present invention has no trouble of transport due to warpage and no cracking of the semiconductor element due to the warpage of the tape, and has a resin leakage (transfer of the tape due to transfer molding on one side). ), Resulting in good assembly.

【0052】<変形例>上記実施例(図7〜図8)のT
ABテープキャリアではポリイミド樹脂テープに宇部興
産株式会社製の商品名「ユーピレックスS」を用いた場
合を例にしたが、本発明はこれに限定されるものではな
く、例えば図2に曲線Bで示した吸湿膨張係数を持つポ
リイミド樹脂、東レデュポン株式会社製の商品名「カプ
トンEN」のTABテープを用いた場合にも適用するこ
とが可能である。
<Modification> T in the above embodiment (FIGS. 7 to 8)
In the AB tape carrier, the case where the product name “UPILEX S” manufactured by Ube Industries, Ltd. was used for the polyimide resin tape was used as an example, but the present invention is not limited to this. For example, a curve B shown in FIG. The present invention can be applied to a case where a TAB tape having a moisture absorption coefficient of “Kapton EN” manufactured by Toray Dupont Co., Ltd. is used.

【0053】ここで、上記実施例(図7〜図8)の作用
効果をまとめれば、次のようになる。
Here, the functions and effects of the above embodiment (FIGS. 7 and 8) can be summarized as follows.

【0054】(1)本実施例のTAB用テープキャリア
は、上記のようにテープ基材を吸湿膨張させて銅箔と貼
り合せるため、銅箔を貼り合わせて室温に戻ったときの
収縮量が、銅箔と接着剤の収縮量に近づく。このため、
テープの反りを小さく制御することができ、その結果、
微細配線のエッチング歩留も向上し、品質の安定したT
AB用テープキャリアを供給することができる。
(1) Since the TAB tape carrier of this embodiment is made to absorb and expand the tape base material and bond it to the copper foil as described above, the amount of shrinkage when the copper foil is bonded and returned to room temperature is reduced. , Approach the shrinkage of copper foil and adhesive. For this reason,
The warpage of the tape can be controlled to be small, and as a result,
The etching yield of fine wiring is also improved, and T
An AB tape carrier can be supplied.

【0055】(2)本実施例のTAB用テープキャリア
を用い、そのめっきパターンに半導体素子をダイアタッ
チ剤で固定した後ワイヤボンディングしてTAB用テー
プキャリアの配線と接続し、更に半導体素子側の片面を
トランスファーモールドし、キュア後はんだボールを搭
載して半導体装置を組み立てた場合、テープ基材を吸湿
膨張させない従来のテープキャリアを用いた場合と比較
し、本発明の製法とその構造のものは、反りによる搬送
のトラブルがなく、またテープ反りに起因する半導体素
子(チップ)の割れもなく、片面をトランスファーモー
ルドしたことによる樹脂漏れやテープ反りに起因する歪
みも少なく、良好な組み立てができる。
(2) Using the TAB tape carrier of this embodiment, the semiconductor element is fixed to the plating pattern with a die attach agent, and then wire-bonded to connect to the wiring of the TAB tape carrier. When a semiconductor device is assembled by transfer molding one side and mounting a solder ball after curing, compared with the case of using a conventional tape carrier that does not absorb and expand the tape base material, the manufacturing method of the present invention and its structure are There is no transfer trouble due to warpage, no cracking of semiconductor elements (chips) due to tape warpage, little resin leakage due to transfer molding on one side, and little distortion due to tape warpage, and good assembly can be performed.

【0056】(3)本実施例のTAB用テープキャリア
は、テープの反りが小さいため、微細配線(50μmピ
ッチ以下)のエッチング形状が良く、エッチングファク
タが3.5以上と向上するため、絶縁抵抗性が高く、ま
た、耐マイグレーション特性に優れている。
(3) The tape carrier for TAB of this embodiment has a small tape warpage, so that the etching shape of fine wiring (50 μm pitch or less) is good, and the etching factor is improved to 3.5 or more. High migration resistance and excellent migration resistance.

【0057】(4)本実施例のTAB用テープキャリア
は、銅箔の厚さをエッチング除去量で制御することがで
き、60μmピッチ以下の微細配線を効率良く生産する
ことができ、しかも40μmピッチの配線の形成が容易
なため、スリムな設計が可能となり、小型化が容易なB
GA・CSP構造のTAB用テープキャリアを供給する
ことができる。
(4) The TAB tape carrier of the present embodiment can control the thickness of the copper foil by the amount removed by etching, and can efficiently produce fine wirings having a pitch of 60 μm or less, and have a 40 μm pitch. Is easy to form, the slim design is possible, and the size reduction is easy.
A TAB tape carrier having a GA / CSP structure can be supplied.

【0058】<使用方法、応用システムなど>本発明の
TAB用テープキャリアは、テープの反りが小さいため
テープの反り形状に優れ、耐マイグレーション特性の優
れた、微細配線(ピッチ60μm以下)のデバイスホー
ル無しフリップチップ接続用、およびBGA・CSP用
並びにデバイスホール有りのビームリードタイプのLC
D(液晶ディスプレイ)用として適用することが可能で
ある。
<How to Use, Applied System, etc.> The tape carrier for TAB of the present invention has a small warpage of the tape so that the tape has an excellent warp shape, excellent migration resistance, and fine wiring (pitch: 60 μm or less) device hole. Beam lead type LC for flip chip connection, for BGA / CSP and with device holes
It can be applied to D (liquid crystal display).

【0059】[0059]

【発明の効果】以上説明したように本発明によれば、次
のような優れた効果が得られる。
As described above, according to the present invention, the following excellent effects can be obtained.

【0060】(1)本発明のテープキャリア(請求項1
〜2)によれば、テープ基材を吸湿膨張させて銅箔と貼
り合せるため、銅箔を貼り合わせて室温に戻ったときの
収縮量が、銅箔と接着剤の収縮量に近づく。このため、
テープの反りを小さく制御することができ、その結果、
微細配線のエッチング歩留も向上し、品質の安定したT
AB用テープキャリアを供給することができる。
(1) The tape carrier of the present invention (claim 1)
According to 2), since the tape base material is absorbed and expanded by moisture absorption and bonded to the copper foil, the shrinkage amount when the copper foil is bonded and returned to room temperature approaches the shrinkage amount of the copper foil and the adhesive. For this reason,
The warpage of the tape can be controlled to be small, and as a result,
The etching yield of fine wiring is also improved, and T
An AB tape carrier can be supplied.

【0061】本発明のテープキャリアは、テープの反り
が小さいため微細配線(50μmピッチ以下)のエッチ
ング形状が良く、エッチングファクタが3.5以上と向
上するため、絶縁抵抗性が高く、また、耐マイグレーシ
ョン特性に優れている。
The tape carrier of the present invention has a small tape warpage, so that the etching shape of fine wiring (50 μm pitch or less) is good, and the etching factor is improved to 3.5 or more, so that the insulation resistance is high and the tape resistance is high. Excellent migration characteristics.

【0062】本発明のTAB用テープキャリアは、銅箔
の厚さをエッチング除去量で制御することができ、60
μmピッチ以下の微細配線を効率良く生産することがで
き、しかも40μmピッチの配線の形成が容易なため、
スリムな設計が可能となり、小型化が容易なBGA・C
SP構造のTAB用テープキャリアを供給することがで
きる。
In the TAB tape carrier of the present invention, the thickness of the copper foil can be controlled by the etching removal amount.
Since fine wiring with a pitch of μm or less can be efficiently produced, and the formation of wiring with a pitch of 40 μm is easy,
BGA ・ C which enables slim design and easy miniaturization
A TAB tape carrier having an SP structure can be supplied.

【0063】(2)本発明のテープキャリアの製造方法
(請求項3〜7)によれば、銅箔の貼り合せに先立ち接
着剤付きテープ基材を相対湿度85%又は相対湿度95
%といった高湿度雰囲気中で吸湿膨張させ、その後銅箔
をロールラミネータで貼り合せるため、TAB用テープ
キャリアの製造の初期段階より最終段階に至るまで、反
りのないテープキャリアを取り扱うことができ、製造工
程全体の効率の向上に寄与することができる。
(2) According to the tape carrier manufacturing method of the present invention (claims 3 to 7), the tape substrate with the adhesive is subjected to a relative humidity of 85% or a relative humidity of 95 prior to the bonding of the copper foil.
% In a high-humidity atmosphere, and then bond the copper foil with a roll laminator, so that from the initial stage to the final stage of TAB tape carrier production, it is possible to handle tape carriers without warpage. This can contribute to improvement in efficiency of the entire process.

【0064】また、このTAB用テープキャリアを用い
た半導体装置パッケージの製造に際しても、反りによる
搬送のトラブルがなく、またテープ反りに起因する半導
体素子(チップ)の割れもなく、片面をトランスファー
モールドよる樹脂漏れやテープ反りに起因する歪みも少
なく、良好な組み立てができる。
When manufacturing a semiconductor device package using this TAB tape carrier, there is no trouble in transport due to warpage, no breakage of semiconductor elements (chips) due to warpage of the tape, and one side is formed by transfer molding. There is little distortion due to resin leakage or tape warpage, and good assembly can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のTAB用テープキャリアの基本構造と
その製造方法を示す図である。
FIG. 1 is a view showing a basic structure of a TAB tape carrier of the present invention and a method of manufacturing the same.

【図2】本発明の実施例でテープ基材として用いるポリ
イミド樹脂フィルムの吸湿による寸法の膨張変化率を示
した図である。
FIG. 2 is a graph showing a dimensional expansion change rate due to moisture absorption of a polyimide resin film used as a tape base in an example of the present invention.

【図3】本発明の実施形態に係るBGA用TABテープ
キャリアの配線パターン面を示す平面図である。
FIG. 3 is a plan view showing a wiring pattern surface of the TAB tape carrier for BGA according to the embodiment of the present invention.

【図4】本発明の実施形態に係る図3のBGA用TAB
テープキャリアの部分断面図である。
4 is a TAB for BGA of FIG. 3 according to an embodiment of the present invention.
It is a fragmentary sectional view of a tape carrier.

【図5】本発明で接着剤付きテープ基材に銅箔を貼り合
せるロールラミネータの構造を示す図である。
FIG. 5 is a view showing a structure of a roll laminator for bonding a copper foil to a tape substrate with an adhesive in the present invention.

【図6】図5のロールラミネータの変形例を示す図であ
る。
FIG. 6 is a view showing a modification of the roll laminator of FIG. 5;

【図7】本発明の第1の実施例に係るTAB用テープキ
ャリアとこれを用いた半導体装置パッケージを示す断面
図である。
FIG. 7 is a sectional view showing a TAB tape carrier according to the first embodiment of the present invention and a semiconductor device package using the same.

【図8】本発明の第2の実施例に係るTAB用テープキ
ャリアとこれを用いた半導体装置パッケージを示す断面
図である。
FIG. 8 is a sectional view showing a TAB tape carrier and a semiconductor device package using the same according to a second embodiment of the present invention.

【図9】従来のロールラミネータの構造を示す図であ
る。
FIG. 9 is a view showing a structure of a conventional roll laminator.

【図10】従来のラミネート・キュア条件を示した図で
ある。
FIG. 10 is a view showing a conventional laminate curing condition.

【符号の説明】[Explanation of symbols]

1 TAB用テープキャリア 2 銅箔 3 接着剤 4 テープ基材 5 接着剤付きテープ基材 6 鉄ロール 9 ゴムロール 15 加熱装置 16 ソルダレジスト 17 はんだボール用ビアホール 18 Ni/Auめっき 19 Snめっき 20 配線パターン 24 半導体素子 25 インナリード 28 トランスファーモールド樹脂 29 スティフナ 31 はんだボール REFERENCE SIGNS LIST 1 TAB tape carrier 2 Copper foil 3 Adhesive 4 Tape base 5 Tape base with adhesive 6 Iron roll 9 Rubber roll 15 Heating device 16 Solder resist 17 Solder ball via hole 18 Ni / Au plating 19 Sn plating 20 Wiring pattern 24 Semiconductor device 25 Inner lead 28 Transfer mold resin 29 Stiffener 31 Solder ball

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】樹脂フィルムの片面に接着剤を設けた接着
剤付きテープ基材に銅箔をロールラミネータで貼り合
せ、その銅箔に配線パターンを形成し、又は更にその配
線パターン上をソルダレジスト膜で保護したTAB用テ
ープキャリアにおいて、 前記接着剤付きテープ基材が、前記銅箔の貼り合せに先
立ち、相対湿度が85%以上の高湿度雰囲気中で吸湿さ
れた接着剤付きテープ基材から成ることを特徴とするテ
ープキャリア。
1. A copper foil is adhered to a tape substrate with an adhesive provided with an adhesive on one side of a resin film by a roll laminator, and a wiring pattern is formed on the copper foil. In a TAB tape carrier protected by a membrane, the adhesive-backed tape base material may be a tape-backed adhesive base material that has been absorbed in a high-humidity atmosphere having a relative humidity of 85% or more prior to the bonding of the copper foil. A tape carrier, comprising:
【請求項2】請求項1記載のテープキャリアにおいて、
前記樹脂フィルムがポリイミド樹脂フィルムから成るこ
とを特徴とするテープキャリア。
2. The tape carrier according to claim 1, wherein
A tape carrier, wherein the resin film comprises a polyimide resin film.
【請求項3】ポリイミド樹脂フィルムの片面に接着剤を
設けた接着剤付きテープ基材に所要の打ち抜き加工をし
た後、これに銅箔をロールラミネータで貼り合せ、接着
剤をキュアした後、銅箔面を露光・エッチングして配線
パターンを形成し、又は更にその配線パターンにソルダ
レジストを塗布するTAB用テープキャリアの製造方法
において、 前記銅箔の貼り合せに先立ち、前記接着剤付きテープ基
材を相対湿度が85%以上の高湿度雰囲気中で吸湿さ
せ、その後、前記銅箔をロールラミネータで貼り合せる
ことを特徴とするテープキャリアの製造方法。
3. A required punching process is performed on a tape substrate with an adhesive in which an adhesive is provided on one side of a polyimide resin film, and then a copper foil is bonded thereto with a roll laminator, and the adhesive is cured. In a method for manufacturing a TAB tape carrier, wherein a wiring pattern is formed by exposing and etching a foil surface, or a solder resist is further applied to the wiring pattern, the tape base with the adhesive before the bonding of the copper foil In a high-humidity atmosphere having a relative humidity of 85% or more, and thereafter bonding the copper foil with a roll laminator.
【請求項4】請求項3記載の製造方法において、前記樹
脂フィルムがポリイミド樹脂フィルムから成ることを特
徴とするテープキャリアの製造方法。
4. A method according to claim 3, wherein said resin film comprises a polyimide resin film.
【請求項5】請求項3又は4記載の製造方法において、
前記配線パターンに直接に、Sn、Ni、Au等のめっ
きを施すことを特徴とするテープキャリアの製造方法。
5. The method according to claim 3, wherein
A method of manufacturing a tape carrier, wherein plating of Sn, Ni, Au or the like is directly applied to the wiring pattern.
【請求項6】請求項3又は4記載の製造方法において、
前記配線パターンに液状ソルダレジストを塗布して硬化
処理を施した後、そのソルダレジスト膜から露出してい
る配線パターン部分に、Sn、Ni、Au等のめっきを
施すことを特徴とするテープキャリアの製造方法。
6. The method according to claim 3, wherein
After applying a liquid solder resist to the wiring pattern and subjecting the wiring pattern to a hardening treatment, the wiring pattern exposed from the solder resist film is plated with Sn, Ni, Au, or the like. Production method.
【請求項7】請求項3又は4記載の製造方法において、
前記配線パターン上に無電解めっきもしくは電気めっき
を施し、又は更にソルダレジストを塗布して硬化処理を
施すことを特徴とするテープキャリアの製造方法。
7. The method according to claim 3, wherein
A method for producing a tape carrier, wherein electroless plating or electroplating is performed on the wiring pattern, or a solder resist is further applied and cured.
JP2001043088A 2001-02-20 2001-02-20 Tape carrier and manufacturing method therefor Withdrawn JP2002246423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001043088A JP2002246423A (en) 2001-02-20 2001-02-20 Tape carrier and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001043088A JP2002246423A (en) 2001-02-20 2001-02-20 Tape carrier and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JP2002246423A true JP2002246423A (en) 2002-08-30

Family

ID=18905313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001043088A Withdrawn JP2002246423A (en) 2001-02-20 2001-02-20 Tape carrier and manufacturing method therefor

Country Status (1)

Country Link
JP (1) JP2002246423A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491412B1 (en) * 2001-08-20 2005-05-25 미츠이 긴조쿠 고교 가부시키가이샤 Laminate film for mounting electronic devices and film carrier tape for mounting electronic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491412B1 (en) * 2001-08-20 2005-05-25 미츠이 긴조쿠 고교 가부시키가이샤 Laminate film for mounting electronic devices and film carrier tape for mounting electronic devices

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