JP2002243428A - パターン検査方法およびその装置 - Google Patents

パターン検査方法およびその装置

Info

Publication number
JP2002243428A
JP2002243428A JP2001035087A JP2001035087A JP2002243428A JP 2002243428 A JP2002243428 A JP 2002243428A JP 2001035087 A JP2001035087 A JP 2001035087A JP 2001035087 A JP2001035087 A JP 2001035087A JP 2002243428 A JP2002243428 A JP 2002243428A
Authority
JP
Japan
Prior art keywords
pattern
scanning electron
data
edge
spatial frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001035087A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002243428A5 (enExample
Inventor
Atsuko Yamaguchi
敦子 山口
Tsuneo Terasawa
恒男 寺澤
Osamu Komuro
修 小室
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001035087A priority Critical patent/JP2002243428A/ja
Publication of JP2002243428A publication Critical patent/JP2002243428A/ja
Publication of JP2002243428A5 publication Critical patent/JP2002243428A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
JP2001035087A 2001-02-13 2001-02-13 パターン検査方法およびその装置 Pending JP2002243428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001035087A JP2002243428A (ja) 2001-02-13 2001-02-13 パターン検査方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001035087A JP2002243428A (ja) 2001-02-13 2001-02-13 パターン検査方法およびその装置

Publications (2)

Publication Number Publication Date
JP2002243428A true JP2002243428A (ja) 2002-08-28
JP2002243428A5 JP2002243428A5 (enExample) 2008-03-27

Family

ID=18898584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001035087A Pending JP2002243428A (ja) 2001-02-13 2001-02-13 パターン検査方法およびその装置

Country Status (1)

Country Link
JP (1) JP2002243428A (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251743A (ja) * 2003-02-20 2004-09-09 Hitachi Ltd パターン検査方法
JP2005116795A (ja) * 2003-10-08 2005-04-28 Toshiba Corp 荷電ビーム照射方法、半導体装置の製造方法および荷電ビーム照射装置
JP2005283139A (ja) * 2004-03-26 2005-10-13 Hitachi High-Technologies Corp パターン測定方法
JP2006234808A (ja) * 2006-02-15 2006-09-07 Hitachi Ltd 計測システム
JP2007225293A (ja) * 2006-02-21 2007-09-06 Tokyo Univ Of Agriculture & Technology 農林水産物特定方法及び農林水産物特定装置
JP2007333745A (ja) * 2007-07-30 2007-12-27 Hitachi High-Technologies Corp パターン形状評価方法、評価装置、及び半導体装置の製造方法
JP2008020735A (ja) * 2006-07-13 2008-01-31 Toshiba Corp フォトマスクの評価方法及び半導体装置の製造方法
US7366620B2 (en) 2004-07-30 2008-04-29 Hitachi High-Technologies Corporation Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
JP2008116472A (ja) * 2008-01-07 2008-05-22 Hitachi Ltd パターン検査方法
US7433542B2 (en) 2003-12-26 2008-10-07 Hitachi High-Technologies Corporation Method for measuring line and space pattern using scanning electron microscope
WO2012099190A1 (ja) * 2011-01-21 2012-07-26 株式会社 日立ハイテクノロジーズ 荷電粒子線装置、及び画像解析装置
WO2019021536A1 (ja) * 2017-07-27 2019-01-31 株式会社日立ハイテクノロジーズ 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
KR20240084932A (ko) * 2022-12-07 2024-06-14 한국기계연구원 디지털 노광 시스템

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62135710A (ja) * 1985-12-10 1987-06-18 Nec Corp 微細パタ−ンの検査方法
JPH02285208A (ja) * 1989-04-27 1990-11-22 Nissan Motor Co Ltd 物体表面の平滑性評価方法
JPH04305113A (ja) * 1991-04-02 1992-10-28 Pola Chem Ind Inc 皮膚表面形態の評価方法及びそのための装置
JPH08197100A (ja) * 1995-01-23 1996-08-06 Sumitomo Heavy Ind Ltd 汚泥凝集処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62135710A (ja) * 1985-12-10 1987-06-18 Nec Corp 微細パタ−ンの検査方法
JPH02285208A (ja) * 1989-04-27 1990-11-22 Nissan Motor Co Ltd 物体表面の平滑性評価方法
JPH04305113A (ja) * 1991-04-02 1992-10-28 Pola Chem Ind Inc 皮膚表面形態の評価方法及びそのための装置
JPH08197100A (ja) * 1995-01-23 1996-08-06 Sumitomo Heavy Ind Ltd 汚泥凝集処理装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049589B2 (en) 2003-02-20 2006-05-23 Hitachi, Ltd. Pattern inspection method
JP2004251743A (ja) * 2003-02-20 2004-09-09 Hitachi Ltd パターン検査方法
JP2005116795A (ja) * 2003-10-08 2005-04-28 Toshiba Corp 荷電ビーム照射方法、半導体装置の製造方法および荷電ビーム照射装置
US7433542B2 (en) 2003-12-26 2008-10-07 Hitachi High-Technologies Corporation Method for measuring line and space pattern using scanning electron microscope
JP2005283139A (ja) * 2004-03-26 2005-10-13 Hitachi High-Technologies Corp パターン測定方法
US7366620B2 (en) 2004-07-30 2008-04-29 Hitachi High-Technologies Corporation Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
US7684937B2 (en) 2004-07-30 2010-03-23 Hitachi, Ltd. Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
JP2006234808A (ja) * 2006-02-15 2006-09-07 Hitachi Ltd 計測システム
JP2007225293A (ja) * 2006-02-21 2007-09-06 Tokyo Univ Of Agriculture & Technology 農林水産物特定方法及び農林水産物特定装置
US7477406B2 (en) 2006-07-13 2009-01-13 Kabushiki Kaisha Toshiba Photomask evaluation method and manufacturing method of semiconductor device
JP2008020735A (ja) * 2006-07-13 2008-01-31 Toshiba Corp フォトマスクの評価方法及び半導体装置の製造方法
JP2007333745A (ja) * 2007-07-30 2007-12-27 Hitachi High-Technologies Corp パターン形状評価方法、評価装置、及び半導体装置の製造方法
JP2008116472A (ja) * 2008-01-07 2008-05-22 Hitachi Ltd パターン検査方法
WO2012099190A1 (ja) * 2011-01-21 2012-07-26 株式会社 日立ハイテクノロジーズ 荷電粒子線装置、及び画像解析装置
JP2012151053A (ja) * 2011-01-21 2012-08-09 Hitachi High-Technologies Corp 荷電粒子線装置、及び画像解析装置
US9129353B2 (en) 2011-01-21 2015-09-08 Hitachi High-Technologies Corporation Charged particle beam device, and image analysis device
KR101567178B1 (ko) 2011-01-21 2015-11-06 가부시키가이샤 히다치 하이테크놀로지즈 하전 입자선 장치 및 화상 해석 장치
KR20190132457A (ko) * 2017-07-27 2019-11-27 가부시키가이샤 히다치 하이테크놀로지즈 전자선 관찰 장치, 전자선 관찰 시스템 및 전자선 관찰 장치의 제어 방법
WO2019021536A1 (ja) * 2017-07-27 2019-01-31 株式会社日立ハイテクノロジーズ 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
US11170969B2 (en) 2017-07-27 2021-11-09 Hitachi High-Tech Corporation Electron beam observation device, electron beam observation system, and control method of electron beam observation device
KR102352508B1 (ko) 2017-07-27 2022-01-19 주식회사 히타치하이테크 전자선 관찰 장치, 전자선 관찰 시스템 및 전자선 관찰 장치의 제어 방법
KR20220011798A (ko) * 2017-07-27 2022-01-28 주식회사 히타치하이테크 전자선 관찰 장치, 전자선 관찰 시스템 및 전자선 관찰 장치의 제어 방법
KR102402301B1 (ko) 2017-07-27 2022-05-30 주식회사 히타치하이테크 전자선 관찰 장치, 전자선 관찰 시스템 및 전자선 관찰 장치의 제어 방법
KR20240084932A (ko) * 2022-12-07 2024-06-14 한국기계연구원 디지털 노광 시스템
KR102845530B1 (ko) 2022-12-07 2025-08-12 한국기계연구원 디지털 노광 시스템

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