JP2002231953A5 - - Google Patents
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- JP2002231953A5 JP2002231953A5 JP2001022480A JP2001022480A JP2002231953A5 JP 2002231953 A5 JP2002231953 A5 JP 2002231953A5 JP 2001022480 A JP2001022480 A JP 2001022480A JP 2001022480 A JP2001022480 A JP 2001022480A JP 2002231953 A5 JP2002231953 A5 JP 2002231953A5
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- JP
- Japan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001022480A JP4801262B2 (ja) | 2001-01-30 | 2001-01-30 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001022480A JP4801262B2 (ja) | 2001-01-30 | 2001-01-30 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002231953A JP2002231953A (ja) | 2002-08-16 |
JP2002231953A5 true JP2002231953A5 (lv) | 2007-12-06 |
JP4801262B2 JP4801262B2 (ja) | 2011-10-26 |
Family
ID=18887891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001022480A Expired - Fee Related JP4801262B2 (ja) | 2001-01-30 | 2001-01-30 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4801262B2 (lv) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4599603B2 (ja) * | 2003-02-12 | 2010-12-15 | シャープ株式会社 | トランジスタの製造方法 |
TWI336921B (en) | 2003-07-18 | 2011-02-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
JP4641741B2 (ja) | 2004-05-28 | 2011-03-02 | 三菱電機株式会社 | 半導体装置 |
JP5238125B2 (ja) * | 2004-11-04 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN1309036C (zh) * | 2004-12-13 | 2007-04-04 | 友达光电股份有限公司 | 薄膜晶体管元件的制造方法 |
JP5177962B2 (ja) * | 2005-05-20 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5177971B2 (ja) * | 2005-07-29 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び半導体装置 |
US7867791B2 (en) | 2005-07-29 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities |
US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3980167B2 (ja) * | 1998-04-07 | 2007-09-26 | 株式会社日立製作所 | Tft電極基板 |
JP4159713B2 (ja) * | 1998-11-25 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4531175B2 (ja) * | 1998-12-03 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2001
- 2001-01-30 JP JP2001022480A patent/JP4801262B2/ja not_active Expired - Fee Related