JP2002222960A5 - - Google Patents

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Publication number
JP2002222960A5
JP2002222960A5 JP2001303671A JP2001303671A JP2002222960A5 JP 2002222960 A5 JP2002222960 A5 JP 2002222960A5 JP 2001303671 A JP2001303671 A JP 2001303671A JP 2001303671 A JP2001303671 A JP 2001303671A JP 2002222960 A5 JP2002222960 A5 JP 2002222960A5
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JP
Japan
Prior art keywords
gate electrode
semiconductor layer
forming
insulating film
mask
Prior art date
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Application number
JP2001303671A
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English (en)
Japanese (ja)
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JP2002222960A (ja
JP4127467B2 (ja
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Priority to JP2001303671A priority Critical patent/JP4127467B2/ja
Priority claimed from JP2001303671A external-priority patent/JP4127467B2/ja
Publication of JP2002222960A publication Critical patent/JP2002222960A/ja
Publication of JP2002222960A5 publication Critical patent/JP2002222960A5/ja
Application granted granted Critical
Publication of JP4127467B2 publication Critical patent/JP4127467B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001303671A 2000-11-06 2001-09-28 半導体装置の作製方法 Expired - Fee Related JP4127467B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001303671A JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000336836 2000-11-06
JP2000-336836 2000-11-06
JP2001303671A JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002222960A JP2002222960A (ja) 2002-08-09
JP2002222960A5 true JP2002222960A5 (enExample) 2005-03-10
JP4127467B2 JP4127467B2 (ja) 2008-07-30

Family

ID=26603397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001303671A Expired - Fee Related JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

Country Status (1)

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JP (1) JP4127467B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4282985B2 (ja) 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
CN104733536B (zh) * 2013-12-20 2018-02-13 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法

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