JP4127467B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4127467B2
JP4127467B2 JP2001303671A JP2001303671A JP4127467B2 JP 4127467 B2 JP4127467 B2 JP 4127467B2 JP 2001303671 A JP2001303671 A JP 2001303671A JP 2001303671 A JP2001303671 A JP 2001303671A JP 4127467 B2 JP4127467 B2 JP 4127467B2
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Japan
Prior art keywords
conductive layer
channel tft
gate electrode
semiconductor layer
forming
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Expired - Fee Related
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JP2001303671A
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English (en)
Japanese (ja)
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JP2002222960A (ja
JP2002222960A5 (enExample
Inventor
節男 中嶋
英人 大沼
直樹 牧田
拓哉 松尾
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP2001303671A priority Critical patent/JP4127467B2/ja
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Publication of JP2002222960A5 publication Critical patent/JP2002222960A5/ja
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Publication of JP4127467B2 publication Critical patent/JP4127467B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001303671A 2000-11-06 2001-09-28 半導体装置の作製方法 Expired - Fee Related JP4127467B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001303671A JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000336836 2000-11-06
JP2000-336836 2000-11-06
JP2001303671A JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002222960A JP2002222960A (ja) 2002-08-09
JP2002222960A5 JP2002222960A5 (enExample) 2005-03-10
JP4127467B2 true JP4127467B2 (ja) 2008-07-30

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JP2001303671A Expired - Fee Related JP4127467B2 (ja) 2000-11-06 2001-09-28 半導体装置の作製方法

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JP (1) JP4127467B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4282985B2 (ja) 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
CN104733536B (zh) * 2013-12-20 2018-02-13 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法

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JP2002222960A (ja) 2002-08-09

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