JP2002217030A - 磁気抵抗効果磁気センサー及び磁気記録再生装置 - Google Patents

磁気抵抗効果磁気センサー及び磁気記録再生装置

Info

Publication number
JP2002217030A
JP2002217030A JP2001013958A JP2001013958A JP2002217030A JP 2002217030 A JP2002217030 A JP 2002217030A JP 2001013958 A JP2001013958 A JP 2001013958A JP 2001013958 A JP2001013958 A JP 2001013958A JP 2002217030 A JP2002217030 A JP 2002217030A
Authority
JP
Japan
Prior art keywords
magnetic
layer
film
magnetic sensor
magnetization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001013958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002217030A5 (enExample
Inventor
Akitomo Itou
顕知 伊藤
Jun Hayakawa
純 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001013958A priority Critical patent/JP2002217030A/ja
Priority to US09/911,541 priority patent/US6657830B2/en
Publication of JP2002217030A publication Critical patent/JP2002217030A/ja
Priority to US10/677,290 priority patent/US6917499B2/en
Publication of JP2002217030A5 publication Critical patent/JP2002217030A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP2001013958A 2001-01-23 2001-01-23 磁気抵抗効果磁気センサー及び磁気記録再生装置 Pending JP2002217030A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001013958A JP2002217030A (ja) 2001-01-23 2001-01-23 磁気抵抗効果磁気センサー及び磁気記録再生装置
US09/911,541 US6657830B2 (en) 2001-01-23 2001-07-25 Magnetoresistive magnetic sensor with tunnel effect and magnetic storage apparatus
US10/677,290 US6917499B2 (en) 2001-01-23 2003-10-03 Magnetoresistive magnetic sensor and magnetic storage apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001013958A JP2002217030A (ja) 2001-01-23 2001-01-23 磁気抵抗効果磁気センサー及び磁気記録再生装置

Publications (2)

Publication Number Publication Date
JP2002217030A true JP2002217030A (ja) 2002-08-02
JP2002217030A5 JP2002217030A5 (enExample) 2005-07-07

Family

ID=18880711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001013958A Pending JP2002217030A (ja) 2001-01-23 2001-01-23 磁気抵抗効果磁気センサー及び磁気記録再生装置

Country Status (2)

Country Link
US (2) US6657830B2 (enExample)
JP (1) JP2002217030A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084467B2 (en) * 2003-07-25 2006-08-01 Hitachi Global Storage Technologies Netherlands B.V. Spin valve transistor with self-pinned antiparallel pinned layer structure
US7274080B1 (en) 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7598555B1 (en) 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
US7252852B1 (en) 2003-12-12 2007-08-07 International Business Machines Corporation Mg-Zn oxide tunnel barriers and method of formation
US7218488B2 (en) * 2004-03-29 2007-05-15 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for reducing the thickness of a sensor stack in a current-perpendicular-to-plane GMR/tunnel valve sensor
JP2005311167A (ja) * 2004-04-23 2005-11-04 Tdk Corp トンネル磁気抵抗効果素子の検査方法及び装置
TWI246088B (en) * 2004-12-29 2005-12-21 Ind Tech Res Inst High magnetoresistant tunneling magnetoresistance device
US7453084B2 (en) * 2005-05-24 2008-11-18 Seagate Technology Llc Spin transistor with ultra-low energy base-collector barrier
US7349187B2 (en) * 2005-09-07 2008-03-25 International Business Machines Corporation Tunnel barriers based on alkaline earth oxides
US7719801B2 (en) * 2006-04-18 2010-05-18 Hitachi Global Storage Technologies Netherlands, B.V. Magnetoresistive (MR) element having a continuous flux guide defined by the free layer
US7646569B2 (en) * 2006-07-20 2010-01-12 Hitachi Global Storage Technologies Netherlands B.V. Pinned layer in magnetoresistive sensor
JP2008159205A (ja) * 2006-12-26 2008-07-10 Fujitsu Ltd 記憶装置、記憶装置用ヘッドの異常検出方法、異常検出プログラム
KR101527533B1 (ko) * 2009-01-09 2015-06-10 삼성전자주식회사 자기 메모리 소자의 형성방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69407158T2 (de) * 1993-10-06 1998-05-28 Koninkl Philips Electronics Nv Magnetoresistive anordnung und diese verwendender magnetkopf
US5896252A (en) * 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
US5777542A (en) * 1995-08-28 1998-07-07 Kabushiki Kaisha Toshiba Magnetoresistance effect device and manufacturing method thereof
JP3461999B2 (ja) * 1996-03-28 2003-10-27 株式会社東芝 磁気抵抗効果素子
JP2914339B2 (ja) * 1997-03-18 1999-06-28 日本電気株式会社 磁気抵抗効果素子並びにそれを用いた磁気抵抗効果センサ及び磁気抵抗検出システム
JP3735443B2 (ja) * 1997-04-03 2006-01-18 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置
JP3097667B2 (ja) * 1998-06-30 2000-10-10 日本電気株式会社 磁気検出素子
US6365286B1 (en) * 1998-09-11 2002-04-02 Kabushiki Kaisha Toshiba Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system
JP2000099922A (ja) * 1998-09-17 2000-04-07 Sony Corp 磁気トンネル素子及びその製造方法

Also Published As

Publication number Publication date
US20040061984A1 (en) 2004-04-01
US6917499B2 (en) 2005-07-12
US20020097535A1 (en) 2002-07-25
US6657830B2 (en) 2003-12-02

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